JPH07226307A - Manufacture of strontium titanate varistor - Google Patents
Manufacture of strontium titanate varistorInfo
- Publication number
- JPH07226307A JPH07226307A JP6018439A JP1843994A JPH07226307A JP H07226307 A JPH07226307 A JP H07226307A JP 6018439 A JP6018439 A JP 6018439A JP 1843994 A JP1843994 A JP 1843994A JP H07226307 A JPH07226307 A JP H07226307A
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- diffusion heat
- oxygen
- atmosphere
- strontium titanate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thermistors And Varistors (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】この発明は、チタン酸ストロンチ
ウム系バリスタの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a strontium titanate varistor.
【0002】[0002]
【従来の技術】チタン酸ストロンチウム系バリスタの製
造工程を大まかに示すと調合、仮焼、成型、焼成、拡散
熱処理の工程からなる。特に、焼成、拡散熱処理の工程
において特性が決定される。降伏時の内部抵抗を下げる
ため、焼成は還元雰囲気下で行い、拡散剤を焼結体の粒
界層に粒界拡散させて、極めて薄い粒界表面に高抵抗層
を形成して半導体特性を得るために大気中で拡散熱処理
を行っている。2. Description of the Related Art The manufacturing process of a strontium titanate-based varistor is roughly described as follows. In particular, the characteristics are determined in the steps of firing and diffusion heat treatment. In order to reduce the internal resistance during yielding, firing is performed in a reducing atmosphere, the diffusing agent is diffused into the grain boundary layer of the sintered body, and a high resistance layer is formed on the extremely thin grain boundary surface to improve semiconductor characteristics. In order to obtain it, diffusion heat treatment is performed in the atmosphere.
【0003】[0003]
【発明が解決しようとする課題】半導体特性を最も大き
く左右する工程は拡散熱処理工程であり、従来の方法の
大気中で拡散熱処理を行うと、チタン酸ストロンチウム
系は他のバリスタ、例えば酸化亜鉛や、粒界層を利用し
て特性を得る粒界層型コンデンサ等に比べ粒界層が不安
定になりやすく、また、拡散剤の種類や量、拡散剤の焼
結体に対する分布、焼結体の量や匣の気密性等により特
性に影響し、特性値のばらつきが大きくなる。そのため
バリスタの特性に大きく影響して、量産が行えないとい
う問題があった。The process that most greatly affects the semiconductor characteristics is the diffusion heat treatment process. When the conventional diffusion heat treatment is performed in the atmosphere, strontium titanate-based varistors such as zinc oxide and The grain boundary layer tends to be unstable compared to a grain boundary layer type capacitor that obtains characteristics by using the grain boundary layer, and the type and amount of the diffusing agent, the distribution of the diffusing agent to the sintered body, and the sintered body The characteristics are affected by the amount of air and the airtightness of the box, and the characteristic values vary widely. Therefore, there is a problem that the characteristics of the varistor are greatly affected and mass production cannot be performed.
【0004】この発明の目的は、拡散熱処理工程におけ
る雰囲気を調整することで、特性値のばらつきが少な
い、バリスタを安定して製造できるような方法を提供す
ることにある。An object of the present invention is to provide a method capable of stably producing a varistor with little variation in characteristic values by adjusting the atmosphere in the diffusion heat treatment step.
【0005】[0005]
【課題を解決するための手段】チタン酸ストロンチウム
系バリスタの製造における結晶粒界を高抵抗化する拡散
剤の拡散熱処理工程において、前記拡散熱処理工程の雰
囲気を酸素分圧または酸素全圧が1.1〜1.8atmの
範囲にした。In the diffusion heat treatment step of a diffusing agent for increasing the resistance of a grain boundary in the production of a strontium titanate-based varistor, the atmosphere of the diffusion heat treatment step has an oxygen partial pressure or a total oxygen pressure of 1. The range was 1 to 1.8 atm.
【0006】[0006]
【作用】拡散熱処理工程における酸素分圧または酸素全
圧を1.1〜1.8atmにしたことで、電流電圧特性、
静電容量が大きい、誘電損失が小さい、それぞれのばら
つきが少ない、安定した電気特性をもつバリスタが得ら
れるようになった。[Function] By adjusting the oxygen partial pressure or the total oxygen pressure in the diffusion heat treatment step to 1.1 to 1.8 atm, the current-voltage characteristics,
A varistor with a large capacitance, a small dielectric loss, a small variation in each, and stable electrical characteristics has come to be obtained.
【0007】[0007]
【実施例】原料として炭酸ストロンチウム、酸化エルビ
ウム、酸化チタンを準備し、焼成後の組成が、(Sr
0.995Er0.005)TiO3となるように所定量秤量・調
合、ボ−ルミルで湿式混合・粉砕したのち、脱水、乾燥
した。1200℃、1時間仮焼した仮焼粉を乾式ミルで
粉砕し、バインダとして酢酸ビニル系を混合し、1軸プ
レスで焼成後の形状が直径10mm、厚み1mmの円板にな
るよう成形、脱脂後、チッ素98%−水素2%ガス雰囲
気で1400℃、3時間焼成した。EXAMPLE Strontium carbonate, erbium oxide, and titanium oxide were prepared as raw materials, and the composition after firing was (Sr
A predetermined amount of 0.995 Er 0.005 ) TiO 3 was weighed and blended, wet-mixed and pulverized with a ball mill, dehydrated and dried. The calcined powder calcined at 1200 ° C for 1 hour is crushed by a dry mill, mixed with vinyl acetate as a binder, and molded and degreased into a disc with a diameter of 10 mm and a thickness of 1 mm after firing with a uniaxial press. Then, it was baked at 1400 ° C. for 3 hours in a gas atmosphere of nitrogen 98% and hydrogen 2%.
【0008】得られた焼結体に拡散剤として炭酸ナトリ
ウムを焼結体100重量%に対して5重量%を表面に塗
布して、全圧2atmのチッ素−酸素混合ガスで酸素分圧
を表1の値に変化させた雰囲気で1時間拡散熱処理を行
った。拡散熱処理温度は電流電圧特性がV1mA=240V
となるようにした。表1の中でPO2は酸素分圧、PN2
はチッ素分圧である。Sodium carbonate as a diffusing agent was applied to the surface of the obtained sintered body in an amount of 5% by weight based on 100% by weight of the sintered body, and an oxygen partial pressure was adjusted with a nitrogen-oxygen mixed gas having a total pressure of 2 atm. Diffusion heat treatment was performed for 1 hour in an atmosphere in which the values shown in Table 1 were changed. The diffusion heat treatment temperature has a current-voltage characteristic of V1mA = 240V
So that In Table 1, PO 2 is oxygen partial pressure, PN 2
Is the nitrogen partial pressure.
【0009】[0009]
【表1】 [Table 1]
【0010】拡散熱処理後の焼結体の両面に銀電極を直
径8mmに形成し、各試料につき電流電圧(V1mA)、非直
線係数(α)、静電容量(C)、誘電損失(D.F.)を測
定した。非直線係数は、1mAと10mAの電流比の対数、
静電容量は、1kHz−1Vで測定した。それぞれのばらつ
き(3Cv)は次式から得られる値で表した。 3Cv=(3σ/平均値)×100 (%)。Silver electrodes having a diameter of 8 mm were formed on both surfaces of the sintered body after the diffusion heat treatment, and each sample had a current-voltage (V1mA), non-linear coefficient (α), capacitance (C), dielectric loss (DF). Was measured. The non-linear coefficient is the logarithm of the current ratio between 1mA and 10mA,
The capacitance was measured at 1 kHz-1V. Each variation (3 Cv) is represented by a value obtained from the following equation. 3Cv = (3σ / average value) × 100 (%).
【0011】酸素分圧を1.1〜1.8atmにすると非
直線係数、静電容量が大きく、誘電損失が小さく、それ
ぞれのばらつきが抑えられている。このことはこの範囲
内で粒界層に高抵抗層が薄く均一に安定して形成されて
いることを示している。When the oxygen partial pressure is set to 1.1 to 1.8 atm, the nonlinear coefficient, the electrostatic capacitance are large, the dielectric loss is small, and the respective variations are suppressed. This indicates that the high resistance layer is thinly and uniformly formed in the grain boundary layer within this range.
【0012】表2は測定結果を示したものである。な
お、表1、表2において、*印を付したものはこの発明
範囲外のものであり、その他のものはこの発明範囲内の
ものである。Table 2 shows the measurement results. In Tables 1 and 2, those marked with * are outside the scope of the invention, and others are within the scope of the invention.
【0013】[0013]
【表2】 [Table 2]
【0014】発明範囲を請求項の範囲に限定したのは次
のような理由による。還元雰囲気での焼成により、全体
が半導体化した焼結体の粒界層を選択的に高抵抗化して
いるのは酸素である。拡散剤は粒界層への酸素拡散を助
長する働きをもっていて、粒界層を形成するために拡散
剤の拡散熱処理を行っている。拡散熱処理工程において
酸素分圧が1.1atm未満であると非直線係数、静電容
量が小さく、誘電損失が大きく、それぞれのばらつきも
著しく大きくなる。また、酸素分圧が1.8atmより大
きくなると静電容量は大きくなるが、非直線係数が小さ
く、誘電損失が大きく、それぞれのばらつきも著しく大
きくなる。The reason why the scope of the invention is limited to the scope of the claims is as follows. It is oxygen that selectively increases the resistance of the grain boundary layer of the sintered body, which is entirely made into a semiconductor, by firing in a reducing atmosphere. The diffusing agent has a function of promoting oxygen diffusion into the grain boundary layer, and the diffusion heat treatment of the diffusing agent is performed to form the grain boundary layer. If the oxygen partial pressure is less than 1.1 atm in the diffusion heat treatment step, the non-linear coefficient and the capacitance are small, the dielectric loss is large, and the respective variations are significantly large. Further, when the oxygen partial pressure is higher than 1.8 atm, the electrostatic capacitance becomes large, but the non-linear coefficient is small, the dielectric loss is large, and the respective variations are significantly large.
【0015】上記実施例では、拡散熱処理雰囲気はチッ
素−酸素混合ガスを用いて説明してきたが、酸素ガス1
00%の雰囲気で圧力を1.1〜1.8atmにしてもよ
い。In the above embodiment, the diffusion heat treatment atmosphere has been described using the nitrogen-oxygen mixed gas.
The pressure may be 1.1 to 1.8 atm in an atmosphere of 00%.
【0016】[0016]
【発明の効果】この発明にかかる酸素圧で得られるチタ
ン酸ストロンチウム系バリスタは、静電容量、非直線係
数の値が大きくなり、それぞれのばらつきも抑えられる
ことから、良品率のよいバリスタが安定して生産でき
る。EFFECTS OF THE INVENTION The strontium titanate-based varistor obtained by oxygen pressure according to the present invention has a large capacitance value and a large non-linear coefficient value, and variations of the varistor can be suppressed. Can be produced.
Claims (1)
造における結晶粒界を高抵抗化する拡散剤の拡散熱処理
工程において、前記拡散熱処理工程の雰囲気を酸素分圧
または酸素全圧が1.1〜1.8atmの範囲にしたこと
を特徴とするチタン酸ストロンチウム系バリスタの製造
方法。1. In a diffusion heat treatment step of a diffusing agent for increasing the resistance of a grain boundary in the production of a strontium titanate varistor, the atmosphere of the diffusion heat treatment step has an oxygen partial pressure or a total oxygen pressure of 1.1 to 1. A method for producing a strontium titanate-based varistor, which is in the range of 8 atm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6018439A JPH07226307A (en) | 1994-02-15 | 1994-02-15 | Manufacture of strontium titanate varistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6018439A JPH07226307A (en) | 1994-02-15 | 1994-02-15 | Manufacture of strontium titanate varistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH07226307A true JPH07226307A (en) | 1995-08-22 |
Family
ID=11971679
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6018439A Pending JPH07226307A (en) | 1994-02-15 | 1994-02-15 | Manufacture of strontium titanate varistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07226307A (en) |
-
1994
- 1994-02-15 JP JP6018439A patent/JPH07226307A/en active Pending
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