JPH0722571A - Resin-sealed semiconductor device - Google Patents

Resin-sealed semiconductor device

Info

Publication number
JPH0722571A
JPH0722571A JP5165352A JP16535293A JPH0722571A JP H0722571 A JPH0722571 A JP H0722571A JP 5165352 A JP5165352 A JP 5165352A JP 16535293 A JP16535293 A JP 16535293A JP H0722571 A JPH0722571 A JP H0722571A
Authority
JP
Japan
Prior art keywords
semiconductor element
tab
resin
lead
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5165352A
Other languages
Japanese (ja)
Inventor
Asao Nishimura
朝雄 西村
Makoto Kitano
誠 北野
Akihiro Yaguchi
昭弘 矢口
Ryuji Kono
竜治 河野
Tadayoshi Tanaka
直敬 田中
Kazuo Shimizu
一男 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5165352A priority Critical patent/JPH0722571A/en
Publication of JPH0722571A publication Critical patent/JPH0722571A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To protect the outer circumference of a semiconductor chip from damage even if difference in thermal expansion is created between the semiconductor chip and a tab by a method wherein high heat radiation performance is obtained by the drawing-out part of the tab. CONSTITUTION:The plan dimensions of the semiconductor chip bonding part 2a of a tab 2 are smaller than the outside dimensions of a semiconductor chip 1. The height of a drawing-out part 2b which is extended from the outer circumference of the semiconductor chip bonding part 2a to the outside of sealing resin 4 is lowered from the height of the semiconductor chip bonding part 2a directly beneath the outer circumference of the semiconductor chip 1.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は樹脂封止型半導体装置に
係り、特に、発熱量の大きな大型半導体素子を封止する
のに好適な樹脂封止型半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device, and more particularly to a resin-encapsulated semiconductor device suitable for encapsulating a large semiconductor element having a large amount of heat generation.

【０００２】[0002]

【従来の技術】近年、樹脂封止型半導体装置では、半導
体素子の高集積化に伴って発熱量が増大する傾向にあ
る。半導体素子の信頼性を確保し、良好な電気特性を得
るには、半導体素子から発生する熱を効率良く外部に放
散させ、半導体素子の温度を一定温度以下に保持するこ
とが必要である。そこで、このように発熱量の大きな半
導体素子を搭載した樹脂封止型半導体装置では、一般
に、リードフレーム材料として、熱伝導性に優れた銅系
の材料が使用されている。さらに、放熱性能を向上させ
る構造として、従来、リードフレームの半導体素子搭載
部であるタブの一部またはこれに連なる部分を封止樹脂
外部にまで引き出し、これを電気接続用のリード同様、
実装基板にはんだ接続することによって、半導体素子で
発生した熱を実装基板に放散させやすくした構造が、特
開昭61−53752号公報,特開昭61−１５２０５１号公報，
特開昭６１−144834号公報などにより知られている。ま
た、封止樹脂外部に引き出したタブの一部もしくはこれ
に連なる部分に放熱部材を取り付けたり、引き出し部分
自体を実装基板とは反対の方向に折り曲げるなどして、
熱を空気中に放散させやすくした構造が特開平2−13876
1 号公報，特開平3−39699号公報，特開平4−214658 号
公報などにより知られている。2. Description of the Related Art In recent years, in a resin-sealed semiconductor device, the amount of heat generated has tended to increase with the high integration of semiconductor elements. In order to ensure the reliability of the semiconductor element and obtain good electrical characteristics, it is necessary to efficiently dissipate the heat generated from the semiconductor element to the outside and keep the temperature of the semiconductor element below a certain temperature. Therefore, in the resin-encapsulated semiconductor device having such a semiconductor element that generates a large amount of heat, a copper-based material having excellent thermal conductivity is generally used as the lead frame material. Furthermore, as a structure for improving heat dissipation performance, conventionally, a part of the tab that is the semiconductor element mounting part of the lead frame or a part continuous with this is pulled out to the outside of the sealing resin, and this is the same as the lead for electrical connection.
A structure in which heat generated in a semiconductor element is easily dissipated to a mounting board by soldering to the mounting board is disclosed in JP-A-61-53752 and JP-A-61-152051.
It is known from JP-A-61-144834. In addition, by attaching a heat dissipation member to a part of the tab drawn out of the sealing resin or a part continuous with this, or bending the drawn part itself in the direction opposite to the mounting board,
A structure that facilitates the dissipation of heat into the air is disclosed in Japanese Patent Laid-Open No. 2-13876.
It is known from Japanese Patent Laid-Open No. 1-39, Japanese Patent Laid-Open No. 3-39699 and Japanese Patent Laid-Open No. 4-214658.

【０００３】[0003]

【発明が解決しようとする課題】上記銅系のリードフレ
ーム材料は、他の代表的なリードフレーム材料である鉄
−ニッケル系の材料に比べて、熱伝導性に優れる反面、
線膨張係数が半導体素子の材料であるシリコンに比べて
高く、樹脂モールド後の冷却やはんだ付け実装時の加熱
などによって、樹脂封止型半導体装置内に高い熱応力を
生じやすいという欠点がある。特に最近では、半導体素
子の高集積化によって素子寸法も大型化する傾向にあ
り、半導体素子とリードフレーム材の線膨張係数差によ
って発生する熱応力はますます増大する傾向にある。The copper-based lead frame material is superior in thermal conductivity to other typical lead frame materials such as iron-nickel-based materials, but
The coefficient of linear expansion is higher than that of silicon, which is the material of the semiconductor element, and there is a drawback that high thermal stress is likely to occur in the resin-sealed semiconductor device due to cooling after resin molding or heating during soldering mounting. Particularly in recent years, the element size tends to increase due to higher integration of semiconductor elements, and the thermal stress generated due to the difference in linear expansion coefficient between the semiconductor element and the lead frame material tends to increase more and more.

【０００４】例として、一辺の長さが１５mmの正方形の
シリコン半導体素子を、これより若干大きめの銅合金製
タブに搭載した樹脂封止型半導体装置を考えることにす
る。シリコンと銅合金の線膨張係数は、それぞれ３×１
０~6／℃と１７×１０~6／℃程度である。半導体素子を
タブに固定するための接着剤には、エポキシ系やポリイ
ミド系の銀ペーストなどが使用されているが、いずれの
場合もあまり強固に接着すると半導体素子に割れが発生
するため、通常は半導体素子とタブの熱膨張差を吸収で
きるような低弾性率の材料を使用するか、または、容易
に剥離が生じるような低強度の材料を使用している。こ
のような樹脂封止型半導体装置を実装基板にはんだ付け
するため室温２０℃から２５０℃まで加熱すると、タブ
は数１に示すように半導体素子に比べて対角線方向に６
８μｍだけ余分に膨張する。As an example, consider a resin-sealed semiconductor device in which a square silicon semiconductor element having a side length of 15 mm is mounted on a copper alloy tab slightly larger than the square. The linear expansion coefficient of silicon and copper alloy is 3 × 1 each
It is about 0 to 6 / ° C and 17 × 10 to 6 / ° C. Epoxy-based or polyimide-based silver paste, etc. is used as the adhesive for fixing the semiconductor element to the tab, but in any case, if the adhesion is too strong, the semiconductor element will crack, so it is usually A material having a low elastic modulus that can absorb a difference in thermal expansion between the semiconductor element and the tab is used, or a material having low strength that easily peels off is used. When such a resin-encapsulated semiconductor device is heated from room temperature of 20 ° C. to 250 ° C. for soldering to a mounting substrate, the tab is 6 in the diagonal direction as compared with the semiconductor element as shown in the formula 1.
Expands extra 8 μm.

【０００５】[0005]

【数１】 [Equation 1]

【０００６】半導体素子とタブの間に上記のような相対
変位が生じた場合の問題点を図１０によって説明する。
図１０は、半導体素子の端部の近傍を示す断面図であ
る。半導体素子１は、その回路形成面１ａを上側にして
タブ２上に接着剤３によって固定され、これらの周囲が
封止樹脂４によってモールドされている。接着剤３の変
形または剥離によって半導体素子１とタブ２の間に上記
のような相対変位δが生じると、半導体素子１の側面１
ｃと封止樹脂４の間の接着界面には引張り応力が作用し
て剥離を生じ、この部分に隙間５が形成される。すると
半導体素子１の回路形成面１ａ端部の封止樹脂４接着界
面には高いせん断応力τが図示の矢印の方向に作用する
ようになり、この部分の界面剥離や、この剥離に起因し
たパッシベーション膜の割れ，微細アルミニウム配線の
変形や腐食，半導体素子１とリードとを接続する金属細
線の断線などの損傷が発生する。Problems caused when the above relative displacement occurs between the semiconductor element and the tab will be described with reference to FIG.
FIG. 10 is a cross-sectional view showing the vicinity of the end portion of the semiconductor element. The semiconductor element 1 is fixed on the tab 2 with an adhesive 3 with its circuit forming surface 1a facing upward, and the periphery of these is molded with a sealing resin 4. When the relative displacement δ as described above occurs between the semiconductor element 1 and the tab 2 due to the deformation or peeling of the adhesive 3, the side surface 1 of the semiconductor element 1
Tensile stress acts on the adhesive interface between c and the sealing resin 4 to cause peeling, and a gap 5 is formed in this portion. Then, a high shear stress τ acts on the bonding interface of the sealing resin 4 at the end of the circuit forming surface 1a of the semiconductor element 1 in the direction of the arrow shown in the figure, and the interface peeling at this portion and the passivation due to this peeling occur. Damage such as film cracking, deformation and corrosion of fine aluminum wiring, and breaking of fine metal wires connecting the semiconductor element 1 and the leads occur.

【０００７】半導体素子とタブの熱膨張差による応力を
低減させる方法としては、従来、タブの寸法を半導体素
子よりも小さくする方法が特開平3−32048号公報などに
より知られている。しかし、タブの一部もしくはこれに
連なる部分を封止樹脂の外部にまで引き出す構造の高放
熱型樹脂封止型半導体装置では、放熱用の引き出し部分
が半導体素子外周部の外側にまで及んでいるため、この
部分が半導体素子との間に前述と同様の相対変位を生じ
させ、半導体素子の回路形成面に損傷を引き起こす。な
お、放熱用の引き出し部分を有しない通常の構造の樹脂
封止型半導体装置の場合でも、樹脂モールド前にタブを
リードフレーム外枠に連結して支持するためのタブ吊り
リードがタブに接続して設けられており、樹脂モールド
後にその封止樹脂外側の部分が切除されている。このタ
ブ吊りリードの場合は、その幅が放熱を目的とした引き
出し部に比べて通常かなり細く形成されているため、半
導体素子回路形成面への影響が軽減されるが、この場合
でも条件によっては損傷を起こすことがある。As a method for reducing the stress due to the difference in thermal expansion between the semiconductor element and the tab, a method of making the size of the tab smaller than that of the semiconductor element is conventionally known from Japanese Patent Laid-Open No. 3-32048. However, in the high heat dissipation type resin-sealed semiconductor device having a structure in which a part of the tab or a part connected to the tab is drawn to the outside of the sealing resin, the drawing part for heat dissipation extends to the outside of the outer peripheral portion of the semiconductor element. Therefore, this portion causes the same relative displacement as that described above between the semiconductor element and the semiconductor element, and damages the circuit formation surface of the semiconductor element. Even in the case of a resin-sealed semiconductor device with a normal structure that does not have a lead-out part for heat dissipation, a tab suspension lead for connecting and supporting the tab to the lead frame outer frame is connected to the tab before resin molding. After the resin molding, the outer portion of the sealing resin is cut off. In the case of this tab suspension lead, its width is usually considerably narrower than that of the lead-out portion for the purpose of heat dissipation, so the influence on the semiconductor element circuit formation surface is reduced, but even in this case, depending on the conditions, May cause damage.

【０００８】本発明の目的は、放熱性能に優れ、大型半
導体素子を搭載しても、半導体素子の回路形成面に損傷
を生じることのない、樹脂封止型半導体装置を提供する
ことにある。An object of the present invention is to provide a resin-encapsulated semiconductor device which has excellent heat dissipation performance and does not cause damage to the circuit forming surface of the semiconductor element even when a large semiconductor element is mounted.

【０００９】[0009]

【課題を解決するための手段】上記目的は、タブの半導
体素子接着部の平面寸法を半導体素子の外形よりも小さ
く形成するとともに、タブもしくはこれに連なる部分の
半導体素子外周直下に位置する部分の高さが半導体素子
接着部よりも低くなるよう屈曲させることによって達成
される。The above object is to form the planar dimension of the semiconductor element adhering portion of the tab smaller than the outer shape of the semiconductor element, and to make the tab or a portion located immediately below the outer periphery of the semiconductor element of the portion connected to the tab. This is achieved by bending the semiconductor device so that its height is lower than that of the semiconductor element bonding portion.

【００１０】[0010]

【作用】半導体素子の外周部の近傍には、タブもしくは
これに連なる部材が存在せず、封止樹脂が半導体素子の
回路形成面から側面、さらに裏面までを包み込むように
して接着している。したがって、半導体素子とタブの間
に熱膨張差を生じても、半導体素子側面の封止樹脂接着
界面に剥離が生じにくく、半導体素子回路形成面に損傷
を生じない。一方、タブもしくはこれに連なる部分を、
断面積の大きな減少を伴うことなく封止樹脂外部に引き
出すことができるので、半導体素子で発生した熱を効率
良く封止樹脂外部に放散させることができる。In the vicinity of the outer peripheral portion of the semiconductor element, there is no tab or a member connected to the tab, and the sealing resin is bonded so as to wrap the semiconductor element from the circuit forming surface to the side surface to the back surface. Therefore, even if a difference in thermal expansion occurs between the semiconductor element and the tab, peeling does not easily occur at the sealing resin adhesive interface on the side surface of the semiconductor element, and the semiconductor element circuit formation surface is not damaged. On the other hand, the tab or the part connected to this is
The heat generated in the semiconductor element can be efficiently dissipated to the outside of the sealing resin because the heat can be extracted to the outside of the sealing resin without a large reduction in the cross-sectional area.

【００１１】[0011]

【実施例】以下、本発明の実施例を図面によって説明す
る。Embodiments of the present invention will be described below with reference to the drawings.

【００１２】図１は本発明の一実施例である樹脂封止型
半導体装置を実装基板に取り付けた状態を示す断面図、
図２は図１の樹脂封止型半導体装置においてリードフレ
ームから上の部分を取り除いて示した平面図であり、図
１は図２のＡ−Ａ′線に沿って切断した断面を示してい
る。半導体素子１は、その回路形成面１ａを上方に向け
てタブ２に接着剤３により固定されている。図２には、
この半導体素子１の外周の位置を破線で示している。タ
ブ２の周囲には複数のリード６が配設されており、半導
体素子１の回路形成面１ａ上の電極と、金属細線７によ
って電気接続されている。タブ２には、半導体素子１の
正射影の内側に入る領域に、平坦な半導体素子接着部２
ａが設けられ、この部分において半導体素子１の裏面１
ｂとの接着が行われている。タブ２の半導体素子接着部
２ａの外周部からは、樹脂封止型半導体装置の外側に向
かって、放熱のための外部引き出し部２ｂが伸びてい
る。これらの各部材は、リード６及びタブ２の外部引き
出し部２ｂの、半導体素子１から離れた側の先端部付近
を除いて、封止樹脂４によってモールドされており、封
止樹脂４の外側では、リード６及びタブ２の外部引き出
し部２ｂが所定の形状に成形され、はんだ９によって実
装基板８に表面実装されている。タブ２の外部引き出し
部２ｂは、半導体素子１の正射影内において一旦下方へ
折り曲げられ、半導体素子接着部２ａよりも低い位置に
おいて半導体素子１外周の直下部を通過した後、再び上
方に折り曲げられ、リード６と同一の高さにおいて封止
樹脂４の外部に引き出されている。FIG. 1 is a sectional view showing a state in which a resin-sealed semiconductor device according to an embodiment of the present invention is mounted on a mounting board,
2 is a plan view showing the resin-sealed semiconductor device of FIG. 1 with the upper portion removed from the lead frame, and FIG. 1 shows a cross section taken along the line AA 'of FIG. . The semiconductor element 1 is fixed to the tab 2 with an adhesive 3 with its circuit forming surface 1a facing upward. In Figure 2,
The position of the outer periphery of the semiconductor element 1 is shown by a broken line. A plurality of leads 6 are arranged around the tab 2, and are electrically connected to the electrodes on the circuit forming surface 1 a of the semiconductor element 1 by the metal thin wires 7. On the tab 2, a flat semiconductor element bonding portion 2 is formed in an area that is inside the orthogonal projection of the semiconductor element 1.
a is provided, and the back surface 1 of the semiconductor element 1 is provided at this portion.
Adhesion with b is performed. An external lead-out portion 2b for heat dissipation extends from the outer peripheral portion of the semiconductor element bonding portion 2a of the tab 2 toward the outside of the resin-sealed semiconductor device. Each of these members is molded with the sealing resin 4 except for the vicinity of the tip of the lead 6 and the external lead-out portion 2b of the tab 2 on the side away from the semiconductor element 1. , The lead 6 and the external lead-out portion 2b of the tab 2 are formed into a predetermined shape, and are surface-mounted on the mounting board 8 by the solder 9. The external lead-out portion 2b of the tab 2 is once bent downward in the orthogonal projection of the semiconductor element 1, passes below the outer periphery of the semiconductor element 1 at a position lower than the semiconductor element bonding portion 2a, and then is bent upward again. , Are led out to the outside of the sealing resin 4 at the same height as the leads 6.

【００１３】本実施例によれば、半導体素子１の裏面１
ｂの外周部の近傍にはタブ２及びこれに連なる部材が存
在せず、封止樹脂４との強固な接着が得られている。実
装基板８へのはんだ付けのために樹脂封止型半導体装置
全体を加熱した場合、タブ２の半導体素子接着部２ａの
外側にある半導体素子裏面１ｂと封止樹脂４との接着部
には、半導体素子１とタブ２の半導体素子接着部２ａと
の間の熱膨張差によってせん断応力が作用する。しか
し、半導体素子裏面１ｂと封止樹脂４との接着部の幅を
ある程度以上広く取れば、このせん断応力は小さくでき
るので、剥離が生じることはない。半導体素子１の裏面
１ｂの外周部に剥離が防止できれば、図１０に示した側
面１ｃの剥離も防止できるので、これに起因する半導体
素子１の回路形成面１ａの損傷を防止することができ
る。According to this embodiment, the back surface 1 of the semiconductor element 1 is
In the vicinity of the outer peripheral portion of b, the tab 2 and a member connected to the tab 2 do not exist, and strong adhesion with the sealing resin 4 is obtained. When the entire resin-encapsulated semiconductor device is heated for soldering to the mounting substrate 8, the bonding portion between the semiconductor element back surface 1b outside the semiconductor element bonding portion 2a of the tab 2 and the sealing resin 4 is Shear stress acts due to the difference in thermal expansion between the semiconductor element 1 and the semiconductor element bonding portion 2a of the tab 2. However, if the width of the bonded portion between the back surface 1b of the semiconductor element and the sealing resin 4 is made wider than a certain amount, this shear stress can be reduced, so that peeling does not occur. If peeling can be prevented on the outer peripheral portion of the back surface 1b of the semiconductor element 1, peeling of the side surface 1c shown in FIG. 10 can also be prevented, and thus damage to the circuit forming surface 1a of the semiconductor element 1 can be prevented.

【００１４】また、本実施例によれば、半導体素子１で
発生した熱は、接着剤３を経てタブ２の半導体素子接着
部２ａに伝わり、ここから外部引き出し部２ｂを経て実
装基板８に放散される。外部引き出し部２ｂは、上記の
ように半導体素子１の外周部から下方に離れた位置に配
設されているので、その幅を広くしても、半導体素子１
外周部近傍の応力を増加させることがない。また外部引
き出し部２ｂは、厚さの減少をほとんど伴うことなく、
折り曲げ加工によって半導体素子１外周部の下方に配設
されている。したがって、タブ２の外部引き出し部２ｂ
には放熱経路として十分な断面積を付与することがで
き、高い放熱性能を得ることができる。Further, according to the present embodiment, the heat generated in the semiconductor element 1 is transmitted to the semiconductor element adhering portion 2a of the tab 2 via the adhesive 3 and then dissipated to the mounting substrate 8 via the external lead portion 2b. To be done. Since the external lead-out portion 2b is arranged at a position separated downward from the outer peripheral portion of the semiconductor element 1 as described above, even if the width thereof is widened, the semiconductor element 1
It does not increase the stress near the outer periphery. Further, the external lead-out portion 2b has almost no decrease in thickness,
It is arranged below the outer peripheral portion of the semiconductor element 1 by bending. Therefore, the external lead-out portion 2b of the tab 2
A sufficient cross-sectional area can be provided as a heat dissipation path, and high heat dissipation performance can be obtained.

【００１５】タブ２とリード６は、銅、またはこれにリ
ン，スズ，亜鉛，鉄などの元素を必要に応じて添加した
合金からなる、厚さ０.１mmから０.５mm程度の金属薄板
内にリードフレームとして一体で形成され、樹脂モール
ド後にリードフレーム外枠から切り離される。したがっ
てタブ２の外部引き出し部２ｂは、これを有しない通常
の構造の樹脂封止型半導体装置におけるタブ吊りリード
同様、半導体素子接着部２ａをリードフレーム外枠に連
結して支持する役割も果たしている。ただし本発明で
は、後述するように、平面形状のみからタブ２の半導体
素子接着部２ａと外部引き出し部２ｂを区別することが
難しいため、外部引き出し部２ｂをタブ２と区別して定
義することが難しい。したがってここでは、その形状及
び封止樹脂４の内外に無関係に、リードフレームのうち
で半導体素子搭載部に連なる部分をすべてタブ２として
定義することにする。The tabs 2 and the leads 6 are made of copper or an alloy in which elements such as phosphorus, tin, zinc, and iron are added as necessary, and are formed in a thin metal plate having a thickness of about 0.1 mm to 0.5 mm. Is integrally formed as a lead frame, and is separated from the lead frame outer frame after resin molding. Therefore, the external lead portion 2b of the tab 2 also plays a role of connecting and supporting the semiconductor element bonding portion 2a to the lead frame outer frame, like the tab suspension lead in a resin-sealed semiconductor device having a normal structure without the tab. . However, in the present invention, as will be described later, it is difficult to distinguish the semiconductor element bonding portion 2a of the tab 2 and the external lead-out portion 2b from only the planar shape, and thus it is difficult to define the external lead-out portion 2b separately from the tab 2. . Therefore, here, regardless of the shape and the inside / outside of the sealing resin 4, all the portions of the lead frame that are continuous with the semiconductor element mounting portion are defined as the tabs 2.

【００１６】接着剤３の材質は、エポキシ，ポリイミ
ド，シリコンなどの高分子材料に、銀やアルミナなどの
高熱伝導性粉末を充填した材料を使用することが望まし
い。また封止樹脂４の材質としては、エポキシ，シリコ
ンなどの高分子材料にシリカやアルミナなどの高熱伝導
絶縁性粒子を充填した材料を使用することが望ましい。As the material of the adhesive 3, it is desirable to use a material obtained by filling a polymer material such as epoxy, polyimide, or silicon with a high thermal conductive powder such as silver or alumina. Further, as the material of the sealing resin 4, it is desirable to use a material obtained by filling a polymer material such as epoxy or silicon with high thermal conductive insulating particles such as silica or alumina.

【００１７】半導体素子１からタブ２の半導体素子接着
部２ａへの熱伝導及び、半導体素子接着部２ａから封止
樹脂４外部までの熱伝導を良好にするため、半導体素子
接着部２ａの寸法はできるだけ大きくし、これによって
半導体素子１との接着面積を増加させるとともに外部引
き出し部２ｂの封止樹脂４内部における長さを短縮する
ことが望ましい。しかし、半導体素子接着部２ａを大き
くし過ぎると、前述したような半導体素子裏面１ｂの剥
離防止効果が得られなくなるので、半導体素子接着部２
ａの外周は半導体素子１外周から少なくとも１mm程度以
上離れていることが望ましい。同様の理由により、タブ
２の外部引き出し部２ｂを下方に折り曲げる位置２ｃも
半導体素子１の外周から１mm程度以上内側に配置するこ
とが望ましい。In order to improve heat conduction from the semiconductor element 1 to the semiconductor element adhering portion 2a of the tab 2 and from the semiconductor element adhering portion 2a to the outside of the sealing resin 4, the size of the semiconductor element adhering portion 2a is set. It is desirable to make it as large as possible, thereby increasing the adhesive area with the semiconductor element 1 and shortening the length of the external lead portion 2b inside the sealing resin 4. However, if the semiconductor element bonding portion 2a is made too large, the effect of preventing the peeling of the semiconductor element back surface 1b as described above cannot be obtained.
The outer periphery of a is preferably separated from the outer periphery of the semiconductor element 1 by at least about 1 mm. For the same reason, it is desirable that the position 2c where the external lead-out portion 2b of the tab 2 is bent downward is also disposed inside the outer periphery of the semiconductor element 1 by about 1 mm or more.

【００１８】タブ２の外部引き出し部２ｂを半導体素子
１の裏面１ｂの外周部から下方に離す距離は、樹脂モー
ルド時に封止樹脂中４に含まれる充填材粒子が外部引き
出し部２ｂと半導体素子裏面１ｂの間に容易に流入でき
るよう、最低でも０.１mm、できれば０.２mm 以上とす
ることが望ましい。外部引き出し部２ｂを半導体素子１
の裏面１ｂ外周部下部で下方に折り曲げる形状は、図１
に示したような台形、すなわち、低くなった部分に半導
体素子１の平面と平行な部分を有する直線的な形状だけ
でなく、平行部を有しないＶ字型の形状や、傾きが連続
的に変化する曲線的な形状であってもよい。さらに図１
の実施例では、タブ２の外部引き出し部２ｂ及びリード
６を封止樹脂４外部に引き出す部分の高さが、タブ２の
半導体素子接着部２ａよりも高くなっているが、本発明
は必ずしもこのような場合に限定されるものではない。
タブ２の外部引き出し部２ｂ及びリード６を半導体素子
接着部２ａより低い位置で封止樹脂４外部に引き出して
も、また同一高さから引き出してもよい。半導体素子接
着部２ａより低い位置で引き出す場合は、一旦下方に折
り曲げた外部引き出し部２ｂを、再度、上方に折り曲げ
なくてもよい。ただし図１のように、タブ２の外部引き
出し部２ｂ及びリード６を半導体素子接着部２ａよりも
高い位置で封止樹脂４外部に引き出す場合は、半導体素
子１の上下部とリード６の上下部の両方で上下の封止樹
脂４の厚さを揃えることができ、樹脂モールド工程にお
ける上下の流れのバランスが取りやすくなるほか、リー
ド６上面の高さを半導体素子１の回路形成面１ａの高さ
に近付けることができるので、金属細線７と半導体素子
１外周部との接触を防止できる。The distance for separating the external lead-out portion 2b of the tab 2 from the outer peripheral portion of the back surface 1b of the semiconductor element 1 downward is such that the filler particles contained in the encapsulating resin 4 at the time of resin molding are the external lead-out portion 2b and the semiconductor element back surface. It is desirable to set at least 0.1 mm, and preferably 0.2 mm or more, so that it can easily flow into 1b. The external lead portion 2b is connected to the semiconductor element 1
The shape of the lower part of the outer periphery of the back surface 1b of FIG.
Not only a trapezoidal shape, that is, a linear shape having a portion parallel to the plane of the semiconductor element 1 in the lowered portion, but also a V-shaped shape having no parallel portion and a continuous inclination. It may be a curved shape that changes. Furthermore, FIG.
In the embodiment, the height of the external lead-out portion 2b of the tab 2 and the portion of the lead 6 that is pulled out to the outside of the sealing resin 4 is higher than that of the semiconductor element bonding portion 2a of the tab 2, but the present invention is not limited to this. It is not limited to such a case.
The external lead-out portion 2b of the tab 2 and the lead 6 may be pulled out to the outside of the sealing resin 4 at a position lower than the semiconductor element bonding portion 2a, or may be pulled out from the same height. In the case of pulling out at a position lower than the semiconductor element bonding portion 2a, the external lead-out portion 2b that has been bent downward does not have to be bent upward again. However, as shown in FIG. 1, when pulling out the external lead-out portion 2b of the tab 2 and the lead 6 to the outside of the sealing resin 4 at a position higher than the semiconductor element adhesive portion 2a, the upper and lower portions of the semiconductor element 1 and the lead 6 are lowered. The thickness of the upper and lower encapsulating resin 4 can be made uniform by both of them, and it becomes easy to balance the up and down flow in the resin molding process, and the height of the upper surface of the lead 6 can be set higher than that of the circuit forming surface 1a of the semiconductor element 1. Since it can be brought close to this, it is possible to prevent the contact between the thin metal wire 7 and the outer peripheral portion of the semiconductor element 1.

【００１９】リード６及びタブ２の外部引き出し部２ｂ
のはんだ接続部の形状は、図１に示したようなリード６
などの先端を外側に向けるガルウィング型だけでなく、
先端を内側に向けるＪベンド型や、下方に向けるバット
型など、表面実装型の樹脂封止型半導体装置で用いられ
る種々のリード形状に成形してよい。またリード６など
の先端を下方に伸ばして、実装基板に設けた貫通孔を介
して基板接続を行うピン挿入型の樹脂封止型半導体装置
としてもよい。ただし本発明は、半導体装置全体を実装
基板とともにはんだ付け温度まで加熱する必要のある、
表面実装型の樹脂封止型半導体装置に適用した場合に、
より大きな効果を発揮することができる。External lead portion 2b of lead 6 and tab 2
The shape of the solder connection part of the lead 6 is as shown in FIG.
Not only the gull wing type with its tip facing outward,
It may be formed into various lead shapes used in a surface mount type resin-sealed semiconductor device, such as a J-bend type with its tip facing inward and a butt type with its tip facing downward. Alternatively, a pin insertion type resin-encapsulated semiconductor device may be used in which the tips of the leads 6 and the like are extended downward to connect the substrates via the through holes provided in the mounting substrate. However, the present invention, it is necessary to heat the entire semiconductor device together with the mounting substrate to the soldering temperature,
When applied to a surface mount type resin-sealed semiconductor device,
It is possible to exert a greater effect.

【００２０】リード６及びタブ２の外部引き出し部２ｂ
を封止樹脂４の外部で折り曲げる向きの上下と、タブ２
に半導体素子１を取り付ける向きの上下の関係も、図１
の場合に限定するものではない。すなわち、リード６な
どを図１に示した下側、すなわち、タブ２に半導体素子
１を取り付けた面とは反対の方向に折り曲げてもよい
し、図１の上側、すなわち、半導体素子１を取り付けた
面と同一の方向に折り曲げてもよい。後者の場合、実装
基板８との接続は、樹脂封止体の上方で行うことにな
る。また封止樹脂４の外部でリード６などの折り曲げ加
工を行わない場合でも、実装基板８との接続を行うこと
ができる。したがって以下では説明の便宜上、リード６
などの折り曲げ方向に無関係に、タブ２の半導体素子１
搭載面側を樹脂封止型半導体装置の上方，反対側を下方
と呼ぶことにする。External lead portion 2b of lead 6 and tab 2
The tabs 2 and
The vertical relationship in the direction in which the semiconductor element 1 is attached to
It is not limited to the case of. That is, the leads 6 and the like may be bent in the lower side shown in FIG. 1, that is, in the direction opposite to the surface on which the semiconductor element 1 is attached to the tab 2, or on the upper side in FIG. 1, that is, the semiconductor element 1 is attached. It may be bent in the same direction as the raised surface. In the latter case, the connection with the mounting board 8 is made above the resin sealing body. Further, even when the leads 6 and the like are not bent outside the sealing resin 4, the mounting substrate 8 can be connected. Therefore, in the following, for convenience of explanation, the lead 6
The semiconductor element 1 of the tab 2 regardless of the bending direction.
The mounting surface side is called the upper side of the resin-sealed semiconductor device, and the opposite side is called the lower side.

【００２１】図３は、本発明の第二の実施例である樹脂
封止型半導体装置の、リードフレームから上の部分を取
り除いて示した平面図である。この場合も破線は半導体
素子１の外周の位置を示している。図２の実施例では、
タブ２の外部引き出し部２ｂを、正方形の半導体素子１
の辺の中央部直下から引き出し、さらに正方形の封止樹
脂４外形の辺の中央部から封止樹脂４外部に引き出して
いた。これに対して図３の実施例では、外部引き出し部
２ｂを正方形の半導体素子１及び正方形の封止樹脂４外
形の角部の方向に引き出している。外部引き出し部２ｂ
が半導体素子１の正射影内の位置２ｃにおいて下方に折
り曲げられ、半導体素子接着部２ａよりも低い位置にお
いて、半導体素子１外周の直下部を通過している点は、
図１，図２の実施例と同様である。このようにタブ２の
外部引き出し部２ｂを引き出す方向は、半導体素子１及
び封止樹脂４外形の平面内の任意の位置であってよい。
また、半導体素子接着部２ａ及び封止樹脂４外形の形状
も特に正方形に限定するものではなく、長方形や任意の
多角形，曲線状の形状であっても、本発明を適用するこ
とができる。ただし半導体素子１の平面形状は、シリコ
ンウエハからの切り出しの都合上、曲線状とすることは
困難であり、通常、正方形または長方形となっている。FIG. 3 is a plan view showing the resin-sealed semiconductor device according to the second embodiment of the present invention with the upper portion removed from the lead frame. Also in this case, the broken line indicates the position of the outer periphery of the semiconductor element 1. In the example of FIG.
The external lead-out portion 2b of the tab 2 is attached to the square semiconductor element 1
Of the square sealing resin 4 and the outside of the square sealing resin 4 outside of the sealing resin 4. On the other hand, in the embodiment of FIG. 3, the external lead-out portion 2b is led out in the direction of the corner of the outer shape of the square semiconductor element 1 and the square sealing resin 4. External drawer 2b
Is bent downward at a position 2c in the orthogonal projection of the semiconductor element 1 and passes directly below the outer periphery of the semiconductor element 1 at a position lower than the semiconductor element bonding portion 2a.
This is similar to the embodiment shown in FIGS. In this way, the direction in which the external lead-out portion 2b of the tab 2 is pulled out may be an arbitrary position within the plane of the outer shape of the semiconductor element 1 and the sealing resin 4.
Further, the outer shapes of the semiconductor element bonding portion 2a and the sealing resin 4 are not particularly limited to square shapes, and the present invention can be applied to rectangular shapes, arbitrary polygonal shapes, and curved shapes. However, it is difficult to make the semiconductor element 1 into a curved shape in plan view because it is cut out from a silicon wafer, and usually has a square or rectangular shape.

【００２２】図３の実施例のように正方形や長方形の半
導体素子１及び封止樹脂４外形の角部の方向からタブ２
の外部引き出し部２ｂを引き出す場合は、図２のように
辺の中央部から引き出す場合に比べて、リード６の配線
距離を短縮できるうえ、リード６の配置の自由度が増す
という利点がある。As in the embodiment shown in FIG. 3, the semiconductor element 1 having a square shape or a rectangular shape and the sealing resin 4 are tabs 2 from the direction of the corners of the outer shape.
In the case of pulling out the external lead-out portion 2b, compared with the case of pulling out from the central portion of the side as shown in FIG. 2, there is an advantage that the wiring distance of the lead 6 can be shortened and the degree of freedom of arrangement of the lead 6 is increased.

【００２３】図４は、本発明の第三の実施例による樹脂
封止型半導体装置のリードフレームから上の部分を取り
除いて示した平面図であり、半導体素子１の外周の位置
を破線で示している。図４の実施例は、リード６とタブ
２の外部引き出し部２ｂを、長方形の封止樹脂４外形の
対向する二辺から引き出す形式の樹脂封止型半導体装置
に本発明を適用した例である。このようにリード６及び
外部引き出し部２ｂを封止樹脂４外形から引き出す方向
の数は、図２，図３に示したような四方向だけでなく、
図４に示したような二方向や、その他一方向や三方向な
ど任意であってよい。また、封止樹脂４からタブ２の外
部引き出し部２ｂを引き出す方向と、リード６を引き出
す方向は必ずしも同一である必要はなく、例えば、タブ
２の外部引き出し部２ｂのみを、図４の上下方向に引き
出してもよい。FIG. 4 is a plan view showing the lead frame of the resin-sealed semiconductor device according to the third embodiment of the present invention with the upper part removed, and the position of the outer periphery of the semiconductor element 1 is shown by a broken line. ing. The embodiment of FIG. 4 is an example in which the present invention is applied to a resin-sealed semiconductor device of a type in which the lead 6 and the external lead-out portion 2b of the tab 2 are drawn out from two opposite sides of the outer shape of the rectangular sealing resin 4. . As described above, the number of directions in which the lead 6 and the external lead portion 2b are pulled out from the outer shape of the sealing resin 4 is not limited to four directions as shown in FIGS.
It may be arbitrary such as two directions as shown in FIG. 4 or other one direction or three directions. The direction in which the external lead-out portion 2b of the tab 2 is pulled out from the sealing resin 4 and the direction in which the lead 6 is pulled out do not necessarily have to be the same. For example, only the external lead-out portion 2b of the tab 2 is shown in the vertical direction in FIG. You may draw it out.

【００２４】図４の実施例では、また、タブ２の外部引
き出し部２ｂの幅が半導体素子接着部２ａの幅と同一に
なっている。このように、外部引き出し部２ｂの幅は必
ずしも半導体接着部２ａに比べて狭くなっている必要は
なく、同一であっても、また逆に広くなっていても差し
支えない。高い放熱性能を得るためには、外部引き出し
部２ｂの幅を、リード６の配置に障害とならない範囲で
できるだけ広くすることが望ましい。なお、図３の例に
示したように、本発明では平面形状のみからタブ２の半
導体装置接着部２ａと外部引き出し部２ｂとを区別する
ことが難しい。したがってここでは、タブ２のうちで、
半導体素子１の裏面１ｂに対向して折り曲げられること
なく平坦となっている部分を半導体素子接着部２ａと呼
ぶことにする。In the embodiment of FIG. 4, the width of the external lead-out portion 2b of the tab 2 is the same as the width of the semiconductor element adhesive portion 2a. As described above, the width of the external lead portion 2b does not necessarily need to be narrower than that of the semiconductor adhesive portion 2a, and may be the same or conversely wide. In order to obtain high heat dissipation performance, it is desirable to make the width of the external lead portion 2b as wide as possible within a range that does not hinder the arrangement of the leads 6. As shown in the example of FIG. 3, in the present invention, it is difficult to distinguish the semiconductor device bonding portion 2a of the tab 2 from the external lead-out portion 2b only from the planar shape. So, here, in tab 2,
A portion of the semiconductor element 1 that faces the back surface 1b and is flat without being bent is referred to as a semiconductor element adhesive portion 2a.

【００２５】図５は、本発明の第五の実施例である樹脂
封止型半導体装置の、リードフレームから上の部分を取
り除いて示した平面図であり、半導体素子１の外周の位
置を破線で示している。本実施例では、タブ２の半導体
素子接着部２ａが額縁状に形成されており、その内周２
ａｉの内側は貫通孔１０となっている。半導体素子接着
部２ａの内周２ａｉの内側、すなわち、貫通孔１０内部
には封止樹脂４が入って半導体素子１の裏面１ｂに接着
している。タブ２の外部引き出し部２ｂは、他の実施例
と同様、半導体素子１の正射影内の位置２ｃにおいて下
方に折り曲げられ、半導体素子接着部２ａよりも低い位
置において半導体素子１外周の直下部を通過している。FIG. 5 is a plan view showing the resin-sealed semiconductor device according to the fifth embodiment of the present invention with the upper portion removed from the lead frame. The position of the outer periphery of the semiconductor element 1 is indicated by a broken line. It shows with. In this embodiment, the semiconductor element adhesive portion 2a of the tab 2 is formed in a frame shape, and the inner circumference 2 thereof is
The inside of ai is a through hole 10. Inside the inner circumference 2ai of the semiconductor element bonding portion 2a, that is, inside the through hole 10, the sealing resin 4 is contained and bonded to the back surface 1b of the semiconductor element 1. The external lead-out portion 2b of the tab 2 is bent downward at a position 2c in the orthogonal projection of the semiconductor element 1 as in the other embodiments, and is located directly below the outer periphery of the semiconductor element 1 at a position lower than the semiconductor element bonding portion 2a. Is passing

【００２６】表面実装型の樹脂封止型半導体装置におい
ては、封止樹脂４が吸湿した状態ではんだ付け加熱を行
うと、封止樹脂４中の水分が急激に気化して蒸気圧が発
生し、樹脂封止型半導体装置内部の接着界面を剥離させ
たり、さらには封止樹脂４にクラックを発生させること
がある。接着界面の中でも特に剥離を生じやすいのは、
接着強度が弱い上に面積の広い、タブ２と半導体素子１
との接着部、及びタブ２と封止樹脂４との接着部であ
る。これまでの各実施例に示したタブ２の半導体素子接
着部２ａの上下いずれかの面に剥離が生じた場合、蒸気
圧は剥離した界面を開口させるように作用するので、半
導体素子接着部２ａの外側にある半導体素子１の裏面１
ｂと封止樹脂４との接着界面には引張り応力が作用す
る。したがって、もし半導体素子接着部２ａの面積が大
きいと、蒸気圧を受ける面積が大きくなるため、半導体
素子裏面１ｂ外周部の封止樹脂４との接着界面に過大な
引張り応力が作用し、この部分にも剥離を生じさせる。
すると図１０と同様、半導体素子１の側面１ｃの剥離
や、これに起因する半導体素子１の回路形成面１ａの損
傷が発生し、タブ２の外部引き出し部２ｂを下方に折り
曲げただけでは、半導体素子１の回路形成面１ａの損傷
防止効果が得られなくなる。In the surface-mounting type resin-sealed semiconductor device, when soldering heating is performed in a state where the sealing resin 4 absorbs moisture, moisture in the sealing resin 4 is rapidly vaporized to generate vapor pressure. In some cases, the adhesive interface inside the resin-sealed semiconductor device may be peeled off, or cracks may be generated in the sealing resin 4. Of the adhesive interfaces, peeling is particularly likely to occur
The tab 2 and the semiconductor element 1 which have a large adhesive area and a large adhesive strength
And an adhesion portion between the tab 2 and the sealing resin 4. When peeling occurs on either the upper or lower surface of the semiconductor element bonding portion 2a of the tab 2 shown in each of the above-described embodiments, the vapor pressure acts to open the peeled interface. Backside 1 of the semiconductor element 1 outside the
Tensile stress acts on the bonding interface between b and the sealing resin 4. Therefore, if the area of the semiconductor element adhesive portion 2a is large, the area that receives the vapor pressure is large, and therefore an excessive tensile stress acts on the adhesive interface with the sealing resin 4 on the outer peripheral surface of the semiconductor element rear surface 1b, and this portion It also causes peeling.
Then, as in FIG. 10, the side surface 1c of the semiconductor element 1 is peeled off and the circuit forming surface 1a of the semiconductor element 1 is damaged due to the peeling, and it is not possible to bend the external lead portion 2b of the tab 2 downward. The effect of preventing damage to the circuit forming surface 1a of the element 1 cannot be obtained.

【００２７】上記の蒸気圧による損傷を防止するには、
タブ２の半導体素子接着部２ａを小さくすれば良い。半
導体素子１の寸法がそれほど大きくない場合には、半導
体素子接着部２ａを単純に小さくするだけでも特に問題
はない。しかし大型の半導体素子１に対して、その裏面
１ｂ中央部に極端に小さな半導体素子接着部２ａを接着
すると、半導体素子１の外周部で発生した熱が、一旦半
導体素子１の中央部まで伝わった後、小さな接着面積を
介してタブ２の半導体素子接着部２ａに伝わり、さら
に、長さの増加したタブの外部引き出し部２ｂを経て封
止樹脂４外部に放散されることになるため、放熱性能が
低下する。To prevent the above vapor pressure damage,
The semiconductor element adhesive portion 2a of the tab 2 may be made small. When the size of the semiconductor element 1 is not so large, there is no particular problem even if the semiconductor element bonding portion 2a is simply made small. However, when the extremely small semiconductor element bonding portion 2a is bonded to the central portion of the back surface 1b of the large semiconductor element 1, the heat generated in the outer peripheral portion of the semiconductor element 1 is once transferred to the central portion of the semiconductor element 1. After that, it is transmitted to the semiconductor element adhering portion 2a of the tab 2 through a small adhering area, and is further radiated to the outside of the sealing resin 4 through the external lead-out portion 2b of the tab whose length is increased. Is reduced.

【００２８】図５の実施例は、このような問題に対処す
るための構造であり、図３の実施例に比べて熱伝導距離
をほとんど増加させることなく、タブ２の半導体素子接
着部２ａの面積を減少させている。半導体素子接着部２
ａの内周２ａｉの内側では、半導体素子１の裏面１ｂと
封止樹脂４の間に強固な接着が得られているので、額縁
状の半導体素子接着部２ａの部分にのみ剥離が生じ、こ
の部分に蒸気圧が作用しても、半導体素子１の裏面１ｂ
の外周部に剥離が生じることはない。また他の実施例同
様、半導体素子１の裏面１ｂの外周部近傍にはタブ２及
びこれに連なる部材が存在しないため、熱応力によって
も半導体素子裏面１ｂの外周部に剥離が生じることがな
い。したがって、本実施例は、図４までの実施例に比べ
て、封止樹脂４が吸湿した場合でも、また一層大型の半
導体素子１に対しても、放熱性能を低下させることなく
半導体素子回路形成面１ａの損傷を防止することができ
る。The embodiment shown in FIG. 5 has a structure for coping with such a problem, and the semiconductor element adhering portion 2a of the tab 2 has almost no increase in heat conduction distance as compared with the embodiment shown in FIG. The area is decreasing. Semiconductor element adhesion part 2
On the inner side of the inner circumference 2ai of a, since strong adhesion is obtained between the back surface 1b of the semiconductor element 1 and the sealing resin 4, peeling occurs only at the frame-shaped semiconductor element adhesion portion 2a. Even if vapor pressure acts on the part, the back surface 1b of the semiconductor element 1
No peeling occurs at the outer peripheral portion of the. Further, as in the other embodiments, since the tab 2 and the member connected thereto are not present in the vicinity of the outer peripheral portion of the back surface 1b of the semiconductor element 1, peeling does not occur on the outer peripheral portion of the semiconductor element back surface 1b due to thermal stress. Therefore, in the present embodiment, as compared with the embodiments up to FIG. 4, even when the sealing resin 4 absorbs moisture, and even for a larger semiconductor element 1, the semiconductor element circuit formation is performed without lowering the heat dissipation performance. It is possible to prevent the surface 1a from being damaged.

【００２９】図６は、本発明の第五の実施例である樹脂
封止型半導体装置の、リードフレームから上の部分を取
り除いて示した平面図であり、半導体素子１の外周の位
置を破線で示している。本実施例では、タブ２の半導体
素子接着部２ａにスリット状の貫通孔１０が４箇所設け
られており、貫通孔１０内部には封止樹脂４が入って半
導体素子１の裏面１ｂに接着している。外部引き出し部
２ｂが半導体素子１の正射影内の位置２ｃにおいて下方
に折り曲げられ、半導体素子接着部２ａよりも低い位置
において半導体素子１外周の直下部を通過している点
は、他の実施例と同様である。このように、半導体素子
接着部２ａを貫通孔１０によって複数の小面積部分に分
割し、分割された小面積部分同士の間の貫通孔１０部分
で半導体素子１の裏面１ｂと封止樹脂４とを強固に接着
することによっても、蒸気圧による半導体素子１の裏面
１ｂの剥離を防止することができる。貫通孔１０の形状
としては、図６に示したスリット状だけでなく、丸型や
角形など任意の形状のものを使用することができる。FIG. 6 is a plan view showing the resin-sealed semiconductor device according to the fifth embodiment of the present invention with the upper portion removed from the lead frame. The position of the outer periphery of the semiconductor element 1 is indicated by a broken line. It shows with. In this embodiment, four slit-shaped through holes 10 are provided in the semiconductor element adhering portion 2a of the tab 2, and the sealing resin 4 enters the inside of the through hole 10 and adheres to the back surface 1b of the semiconductor element 1. ing. The external lead-out portion 2b is bent downward at a position 2c in the orthogonal projection of the semiconductor element 1 and passes directly below the outer periphery of the semiconductor element 1 at a position lower than the semiconductor element bonding portion 2a. Is the same as. In this way, the semiconductor element adhesive portion 2a is divided into a plurality of small area portions by the through holes 10, and the back surface 1b of the semiconductor element 1 and the sealing resin 4 are separated by the through hole 10 portions between the divided small area portions. It is possible to prevent peeling of the back surface 1b of the semiconductor element 1 due to vapor pressure also by firmly adhering. The shape of the through hole 10 is not limited to the slit shape shown in FIG. 6, but any shape such as a round shape or a square shape can be used.

【００３０】図７は、本発明の第二の実施例である樹脂
封止型半導体装置を実装基板に取り付けた状態を示す断
面図である。タブ２の外部引き出し部２ｂが半導体素子
１の正射影内の位置２ｃにおいて下方に折り曲げられ、
半導体素子接着部２ａよりも低い位置において半導体素
子１外周の直下部を通過している点は、他の実施例と同
様である。本実施例では、タブ２の外部引き出し部２ｂ
が封止樹脂４の外部において、リード６と上下反対の方
向に折り曲げられている。この場合、タブ２の外部引き
出し部２ｂは、封止樹脂４外部において放熱フィンとし
ての役割を果たしており、樹脂封止型半導体装置内部で
発生した熱を空気中に放散させやすくしている。この放
熱方式は、実装基板上の電子部品の実装密度が高く、実
装基板経由で熱を放散させることが困難な場合に適して
いる。本発明は、このような構造の樹脂封止型半導体装
置に適用した場合でも、半導体素子１の回路形成面１ａ
の損傷を防止することができる。FIG. 7 is a sectional view showing a state in which the resin-sealed semiconductor device according to the second embodiment of the present invention is attached to a mounting board. The external lead-out portion 2b of the tab 2 is bent downward at a position 2c within the orthogonal projection of the semiconductor element 1,
It is the same as the other embodiments in that it passes directly below the outer periphery of the semiconductor element 1 at a position lower than the semiconductor element bonding portion 2a. In this embodiment, the external lead-out portion 2b of the tab 2 is used.
Outside the encapsulation resin 4, the leads 6 are bent upside down. In this case, the external lead-out portion 2b of the tab 2 plays a role as a heat radiation fin outside the sealing resin 4, and makes it easy to dissipate the heat generated inside the resin-sealed semiconductor device into the air. This heat dissipation method is suitable when the mounting density of electronic components on the mounting board is high and it is difficult to dissipate the heat via the mounting board. Even when the present invention is applied to the resin-encapsulated semiconductor device having such a structure, the circuit forming surface 1a of the semiconductor element 1 is formed.
It is possible to prevent damage.

【００３１】図８は、本発明の第三の実施例である樹脂
封止型半導体装置の断面図である。本実施例では、電気
接続のためのリード６が、図７までの実施例におけるタ
ブ２を兼ねており、半導体素子１の回路形成面１ａ上の
電極とリード６とを金属細線７によって電気接続すると
ともに、リード６上に絶縁部材１１を介して半導体素子
１の裏面１ｂが接着されている。リード６は、その半導
体素子接着部６ａにおいて半導体素子１と接着され、図
７までの実施例におけるタブ２の外部引き出し部２ｂ同
様、半導体素子１の正射影内の位置６ｃにおいて下方に
折り曲げられ、その半導体素子接着部６ａよりも低い位
置において半導体素子１外周の直下部を通過している。
またリード６は、封止樹脂４の外部において、実装基板
との接続のため所定の形状に成形されている。このよう
にリード６の上に半導体素子１を搭載する、いわゆるチ
ップ・オン・リード構造の樹脂封止型半導体装置に銅系
のリードフレーム材料を適用した場合、数多くの高熱伝
導性のリード６が半導体素子１と広い面積にわたって接
着される上、封止樹脂４の外部まで引き出されるので、
高い放熱性能を得ることができる。しかし、リード６を
半導体素子１の裏面１ｂの外周部にまで接着すると、半
導体素子１とリード６の熱膨張差によって、図１０同
様、半導体素子１側面１ｃの剥離と、これに起因する半
導体素子１の回路形成面１ａの損傷が生じやすくなる。
本実施例では、半導体素子１の裏面１ｂの外周部近傍に
リード６が存在しないため、半導体素子１の裏面１ｂ外
周部及び側面１ｃに剥離が発生せず、したがって回路形
成面１ａに損傷が生じることがない。FIG. 8 is a sectional view of a resin-sealed semiconductor device according to the third embodiment of the present invention. In this embodiment, the lead 6 for electrical connection also serves as the tab 2 in the embodiments up to FIG. 7, and the electrode on the circuit forming surface 1a of the semiconductor element 1 and the lead 6 are electrically connected by the thin metal wire 7. At the same time, the back surface 1b of the semiconductor element 1 is bonded onto the leads 6 via the insulating member 11. The lead 6 is bonded to the semiconductor element 1 at the semiconductor element bonding portion 6a, and is bent downward at a position 6c in the orthogonal projection of the semiconductor element 1 like the external lead-out portion 2b of the tab 2 in the embodiments up to FIG. It passes directly below the outer periphery of the semiconductor element 1 at a position lower than the semiconductor element bonding portion 6a.
Further, the leads 6 are formed in a predetermined shape outside the sealing resin 4 for connection with the mounting substrate. When a copper-based lead frame material is applied to a resin-sealed semiconductor device having a so-called chip-on-lead structure in which the semiconductor element 1 is mounted on the leads 6 as described above, a large number of leads 6 having high thermal conductivity are produced. Since it is bonded to the semiconductor element 1 over a wide area and is pulled out to the outside of the sealing resin 4,
High heat dissipation performance can be obtained. However, when the lead 6 is adhered to the outer peripheral portion of the back surface 1b of the semiconductor element 1, the side surface 1c of the semiconductor element 1 is peeled off due to the difference in thermal expansion between the semiconductor element 1 and the lead 6, and the semiconductor element caused by this is peeled off. The first circuit forming surface 1a is easily damaged.
In the present embodiment, since the leads 6 are not present in the vicinity of the outer peripheral portion of the back surface 1b of the semiconductor element 1, peeling does not occur on the outer peripheral portion of the back surface 1b and the side surface 1c of the semiconductor element 1, and therefore the circuit forming surface 1a is damaged. Never.

【００３２】図９は、本発明の第六の実施例である樹脂
封止型半導体装置の、リードフレームから上の部分を取
り除いて示した平面図であり、半導体素子１の外周の位
置を破線で示している。本実施例は、タブ２の外部引き
出し部を有しない通常の構造の樹脂封止型半導体装置に
本発明を適用した例である。タブ２には、半導体素子１
の正射影の内側に入る領域に、平坦な半導体素子接着部
２ａが設けられ、この部分において半導体素子１との接
着が行われている。タブ２の半導体素子接着部２ａの外
周部からは、封止樹脂４の外周部に向かってタブ吊りリ
ード２ｄが伸びており、封止樹脂４の外周部において切
断されている。タブ吊りリード２ｄは、半導体素子１の
正射影内の位置２ｃにおいて下方に折り曲げられ、半導
体素子接着部２ａよりも低い位置において半導体素子１
外周の直下部を通過している。FIG. 9 is a plan view showing the resin-sealed semiconductor device according to the sixth embodiment of the present invention with the upper portion removed from the lead frame. The position of the outer periphery of the semiconductor element 1 is indicated by a broken line. It shows with. The present embodiment is an example in which the present invention is applied to a resin-sealed semiconductor device having a normal structure that does not have an external lead-out portion for the tab 2. The semiconductor element 1 is provided on the tab 2.
A flat semiconductor element bonding portion 2a is provided in a region inside the orthographic projection of 1 and the semiconductor element 1 is bonded to this portion. A tab suspension lead 2d extends from the outer peripheral portion of the semiconductor element bonding portion 2a of the tab 2 toward the outer peripheral portion of the sealing resin 4, and is cut at the outer peripheral portion of the sealing resin 4. The tab suspension lead 2d is bent downward at a position 2c in the orthogonal projection of the semiconductor element 1, and is placed at a position lower than the semiconductor element bonding portion 2a.
It passes just below the outer circumference.

【００３３】本実施例に示したようなタブ吊りリード２
ｄは、樹脂モールド工程及びそれ以前の工程では、タブ
２の半導体素子接着部２ａをリードフレーム外枠に連結
して支持する役割を果たしており、樹脂モールド後は、
その封止樹脂４より外側の部分が切除されている。した
がって、放熱経路を兼ねる図７までの実施例に示した外
部引き出し部２ｂに比べれば、幅を狭くすることがで
き、半導体素子１の回路形成面１ａへの影響も小さい。
しかし、この場合でも、タブ２の半導体素子接着部２ａ
及びタブ吊りリード２ｄを半導体素子１の裏面１ｂの外
周部近傍から遠ざけることによって、一層確実に半導体
素子１の回路形成面１ａの損傷を防止することができ
る。Tab suspension lead 2 as shown in this embodiment
d plays a role of connecting and supporting the semiconductor element bonding portion 2a of the tab 2 to the lead frame outer frame in the resin molding step and the steps before it.
A portion outside the sealing resin 4 is cut off. Therefore, as compared with the external lead-out portion 2b shown in the embodiments up to FIG. 7 which also serves as a heat radiation path, the width can be made narrower and the influence on the circuit formation surface 1a of the semiconductor element 1 is small.
However, even in this case, the semiconductor element bonding portion 2a of the tab 2
Further, by moving the tab suspension lead 2d away from the vicinity of the outer peripheral portion of the back surface 1b of the semiconductor element 1, it is possible to more reliably prevent the circuit formation surface 1a of the semiconductor element 1 from being damaged.

【００３４】[0034]

【発明の効果】本発明によれば、半導体素子の外周部近
傍にタブもしくはこれに連なる部材が存在しないため、
半導体素子とタブの間に熱膨張差を生じても半導体素子
側面の封止樹脂接着界面に剥離が発生することがない。
したがって、大型の半導体素子を搭載した場合でも、こ
の剥離に起因した半導体素子回路形成面の損傷を防止す
ることができる。また、タブもしくはこれに連なる部分
を、断面積の大きな減少を伴うことなく封止樹脂外部に
引き出すことができるので、半導体素子で発生した熱を
効率良く封止樹脂外部に放散させることができる。According to the present invention, since there is no tab or a member connected to the tab near the outer peripheral portion of the semiconductor element,
Even if a difference in thermal expansion occurs between the semiconductor element and the tab, peeling does not occur at the sealing resin adhesive interface on the side surface of the semiconductor element.
Therefore, even when a large-sized semiconductor element is mounted, it is possible to prevent the semiconductor element circuit formation surface from being damaged due to the peeling. Further, since the tab or the portion connected to the tab can be drawn out to the outside of the sealing resin without a large reduction in the cross-sectional area, the heat generated in the semiconductor element can be efficiently dissipated to the outside of the sealing resin.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の一実施例の樹脂封止型半導体装置を実
装基板に取り付けた状態を示す断面図。FIG. 1 is a cross-sectional view showing a state in which a resin-sealed semiconductor device according to an embodiment of the present invention is attached to a mounting board.

【図２】図１の実施例の樹脂封止型半導体装置のリード
フレームから上の部分を取り除いて示した平面図。2 is a plan view showing the resin-encapsulated semiconductor device of the embodiment of FIG. 1 with its upper part removed from the lead frame.

【図３】本発明の第二の実施例の樹脂封止型半導体装置
のリードフレームから上の部分を取り除いて示した平面
図。FIG. 3 is a plan view showing a lead frame of a resin-sealed semiconductor device according to a second embodiment of the present invention with an upper portion removed.

【図４】本発明の第三の実施例の樹脂封止型半導体装置
のリードフレームから上の部分を取り除いて示した平面
図。FIG. 4 is a plan view showing a lead frame of a resin-sealed semiconductor device according to a third embodiment of the present invention with an upper portion removed.

【図５】本発明の第四の実施例の樹脂封止型半導体装置
のリードフレームから上の部分を取り除いて示した平面
図。FIG. 5 is a plan view showing a lead frame of a resin-encapsulated semiconductor device according to a fourth embodiment of the present invention with an upper portion removed.

【図６】本発明の第五の実施例の樹脂封止型半導体装置
のリードフレームから上の部分を取り除いて示した平面
図。FIG. 6 is a plan view showing a lead frame of a resin-sealed semiconductor device according to a fifth embodiment of the present invention with an upper portion removed.

【図７】本発明の第二の実施例の樹脂封止型半導体装置
を実装基板に取り付けた状態を示す断面図。FIG. 7 is a sectional view showing a state in which the resin-sealed semiconductor device of the second embodiment of the present invention is attached to a mounting board.

【図８】本発明の第三の実施例の樹脂封止型半導体装置
を示す断面図。FIG. 8 is a sectional view showing a resin-encapsulated semiconductor device according to a third embodiment of the present invention.

【図９】本発明の第六の実施例の樹脂封止型半導体装置
のリードフレームから上の部分を取り除いて示した平面
図。FIG. 9 is a plan view showing a lead frame of a resin-encapsulated semiconductor device according to a sixth embodiment of the present invention with an upper portion removed.

【図１０】半導体素子とタブの間の相対変位によって生
じる問題点を説明するための半導体素子端部近傍の断面
図。FIG. 10 is a cross-sectional view in the vicinity of an end portion of the semiconductor element for explaining a problem caused by relative displacement between the semiconductor element and the tab.

【符号の説明】[Explanation of symbols]

１…半導体素子、１ａ…回路形成面、１ｂ…裏面、１ｃ
…側面、２…タブ、２ａ…半導体素子接着部、２ｂ…外
部引き出し部、２ｃ…下方折り曲げ位置、３…接着剤、
４…封止樹脂、６…リード、７…金属細線、８…実装基
板、９…はんだ。DESCRIPTION OF SYMBOLS 1 ... Semiconductor element, 1a ... Circuit formation surface, 1b ... Back surface, 1c
... Side surfaces, 2 ... Tabs, 2a ... Semiconductor element adhesive portion, 2b ... External lead-out portion, 2c ... Downward bending position, 3 ... Adhesive,
4 ... Sealing resin, 6 ... Lead, 7 ... Metal fine wire, 8 ... Mounting board, 9 ... Solder.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 河野 竜治 茨城県土浦市神立町502番地 株式会社日 立製作所機械研究所内 (72)発明者 田中 直敬 茨城県土浦市神立町502番地 株式会社日 立製作所機械研究所内 (72)発明者 清水 一男 群馬県高崎市西横手町111番地株式会社日 立製作所半導体事業部内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Ryuji Kono 502 Jinritsu-cho, Tsuchiura-shi, Ibaraki Prefecture Hiritsu Manufacturing Co., Ltd.Mechanical Research Institute (72) Naotaka Tanaka 502 Kintate-cho, Tsuchiura-shi, Ibaraki Hiritsu Manufacturing Co., Ltd. Mechanical Research Laboratory (72) Inventor Kazuo Shimizu 111 Nishiyokote-cho, Takasaki City, Gunma Prefecture

Claims (6)

【特許請求の範囲】[Claims] 【請求項１】半導体素子の回路形成面を上方に向けてタ
ブの上に搭載し、これらの周囲を樹脂で封止して、前記
半導体素子の平面の正射影の外側において前記タブもし
くは前記タブに連なる部材を樹脂の外部に引き出す構造
の樹脂封止型半導体装置において、前記半導体素子の外
周の直下における前記タブもしくは前記タブに連なる部
材の高さが、前記タブの前記半導体素子の搭載部よりも
低くなるよう、前記タブもしくは前記タブに連なる部材
に曲げ加工を施したことを特徴とする樹脂封止型半導体
装置。1. A semiconductor element is mounted on a tab with its circuit forming surface facing upward, and the periphery of these is sealed with a resin, and the tab or the tab is provided outside the orthogonal projection of the plane of the semiconductor element. In a resin-sealed semiconductor device having a structure in which a member connected to the outside of a resin is pulled out, the height of the tab immediately below the outer periphery of the semiconductor element or the member connected to the tab is higher than the mounting portion of the semiconductor element of the tab. The resin-encapsulated semiconductor device is characterized in that the tab or a member connected to the tab is bent so as to be lowered. 【請求項２】半導体素子の回路形成面を上方に向けてタ
ブの上に搭載し、これらの周囲を樹脂で封止して、前記
半導体素子の平面の正射影の外側において前記タブもし
くは前記タブに連なる部材を樹脂の外部に引き出す構造
の樹脂封止型半導体装置において、前記タブの前記半導
体素子の搭載部の平面寸法を前記半導体素子の外周より
も小さく形成し、前記半導体素子の外周の直下における
前記タブもしくは前記タブに連なる部材の高さが、前記
半導体素子の搭載部よりも低くなるよう、前記タブもし
くは前記タブに連なる部材に曲げ加工を施したことを特
徴とする樹脂封止型半導体装置。2. A semiconductor element is mounted on a tab with a circuit formation surface facing upward, and the periphery of these is sealed with a resin, and the tab or the tab is provided outside the orthogonal projection of the plane of the semiconductor element. In a resin-encapsulated semiconductor device having a structure in which a member connected to the outside of a resin is drawn out, a planar dimension of a mounting portion of the semiconductor element of the tab is formed to be smaller than an outer circumference of the semiconductor element, and a portion directly below the outer circumference of the semiconductor element is formed. In the resin-sealed semiconductor, the tab or the member connected to the tab is bent so that the height of the tab or the member connected to the tab is lower than the mounting portion of the semiconductor element. apparatus. 【請求項３】請求項１または２において、前記タブの材
質が銅、もしくは銅を含む合金である樹脂封止型半導体
装置。3. The resin-sealed semiconductor device according to claim 1, wherein the material of the tab is copper or an alloy containing copper. 【請求項４】半導体素子と電気的に接続された複数のリ
ード上に、前記半導体素子の回路形成面を上方に向けて
搭載し、これらの周囲を樹脂で封止して、前記半導体素
子の平面の正射影の外側において前記リードを樹脂外部
に引き出す構造の樹脂封止型半導体装置において、前記
半導体素子の外周の直下における前記リードの高さが、
前記リードの前記半導体素子の搭載部よりも低くなるよ
う、前記リードに曲げ加工を施したことを特徴とする樹
脂封止型半導体装置。4. A semiconductor element is mounted on a plurality of leads electrically connected to the semiconductor element with the circuit formation surface of the semiconductor element facing upward, and the periphery of these is sealed with a resin to form a semiconductor element of the semiconductor element. In a resin-sealed semiconductor device having a structure in which the lead is drawn out of the resin outside the orthogonal projection of the plane, the height of the lead immediately below the outer periphery of the semiconductor element is
A resin-encapsulated semiconductor device, wherein the lead is bent so that the lead is lower than the mounting portion of the semiconductor element. 【請求項５】請求項４において、前記リードの材質が
銅、もしくは銅を含む合金である樹脂封止型半導体装
置。5. The resin-sealed semiconductor device according to claim 4, wherein the material of the lead is copper or an alloy containing copper. 【請求項６】半導体素子の回路形成面を上方に向けて、
銅もしくは銅を含む合金よりなるタブの上に搭載し、こ
れらの周囲を樹脂で封止した構造の樹脂封止型半導体装
置において、前記タブの前記半導体素子の搭載部の平面
寸法を前記半導体素子の外周よりも小さく形成し、前記
半導体素子の外周の直下における前記タブもしくは前記
タブに連なる部材の高さが、前記半導体素子の搭載部よ
りも低くなるよう、前記タブもしくは前記タブに連なる
部材に曲げ加工を施したことを特徴とする樹脂封止型半
導体装置。6. The circuit formation surface of the semiconductor element is directed upward,
In a resin-sealed semiconductor device having a structure in which a tab made of copper or an alloy containing copper is mounted and the periphery thereof is sealed with a resin, the plane dimension of the mounting portion of the semiconductor element of the tab is the semiconductor element. The tab or a member continuous with the tab is formed so that the height of the tab or a member continuous with the tab immediately below the outer periphery of the semiconductor element is lower than the mounting portion of the semiconductor element. A resin-encapsulated semiconductor device characterized by being bent.
JP5165352A 1993-07-05 1993-07-05 Resin-sealed semiconductor device Pending JPH0722571A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5165352A JPH0722571A (en) 1993-07-05 1993-07-05 Resin-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5165352A JPH0722571A (en) 1993-07-05 1993-07-05 Resin-sealed semiconductor device

Publications (1)

Publication Number Publication Date
JPH0722571A true JPH0722571A (en) 1995-01-24

Family

ID=15810734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5165352A Pending JPH0722571A (en) 1993-07-05 1993-07-05 Resin-sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPH0722571A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031750A (en) * 2001-07-13 2003-01-31 Matsushita Electric Ind Co Ltd Lead frame and semiconductor device using it

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031750A (en) * 2001-07-13 2003-01-31 Matsushita Electric Ind Co Ltd Lead frame and semiconductor device using it

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