JPH07221444A - Manufacture of insulation substrate with metallic thin layer - Google Patents
Manufacture of insulation substrate with metallic thin layerInfo
- Publication number
- JPH07221444A JPH07221444A JP6009669A JP966994A JPH07221444A JP H07221444 A JPH07221444 A JP H07221444A JP 6009669 A JP6009669 A JP 6009669A JP 966994 A JP966994 A JP 966994A JP H07221444 A JPH07221444 A JP H07221444A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metallic thin
- metal layer
- polyimide film
- wiring board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Laminated Bodies (AREA)
- Casting Or Compression Moulding Of Plastics Or The Like (AREA)
- Moulding By Coating Moulds (AREA)
- Lining Or Joining Of Plastics Or The Like (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、高密度配線板の製造に
使用される金属薄層付き絶縁基板の製造法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an insulating substrate with a thin metal layer used for manufacturing a high density wiring board.
【0002】[0002]
【従来の技術】配線板の製造に使用される銅張り積層板
としては、ステンレススチールの回転ドラム上に電解析
出させた銅箔と紙やガラス基材に熱硬化性樹脂を含浸さ
れたプリプレグとを積層したものがある。この場合、銅
箔の厚さとしては、18μm、35μm、50μm 程度と厚いも
のが主流である。上記のような銅張り積層板を使用した
配線板の製造方法としては、銅張り積層板をエッチング
して回路加工を行うエッチドフォイル法やセミアディテ
ィブ法がある。エッチドフォイル法は、サイドエッチン
グの問題があり高密度配線の形成は困難である。セミア
ディティブ法に於ける配線の微細・高密度化下地金属層
(銅箔)の厚さに依存している。すなわち、エッチング
する下地金属層の厚さが薄いほどエッチング精度が高く
なる。2. Description of the Related Art Copper-clad laminates used in the manufacture of wiring boards include prepregs obtained by electrolytically depositing copper foil on a stainless steel rotating drum and a paper or glass base material impregnated with a thermosetting resin. There is a stack of and. In this case, the main thickness of the copper foil is 18 μm, 35 μm, and 50 μm. As a method for manufacturing a wiring board using the above copper-clad laminate, there are an etched foil method and a semi-additive method in which the copper-clad laminate is etched to perform circuit processing. The etched foil method has a problem of side etching, and it is difficult to form high-density wiring. It depends on the thickness of the underlying metal layer (copper foil) for fine and high-density wiring in the semi-additive method. That is, the thinner the underlying metal layer to be etched, the higher the etching accuracy.
【0003】そこで高密度配線を形成する場合には、5
〜9μm の薄い銅箔を用いた銅張り積層板をベースとし
ているが、銅箔のキャリアーであるアルミ箔(厚さ約50
μm)を物理的あるいは化学的に除去する際に、アルミ
箔の機械的強度がないために引き剥す途中でアルミ箔が
破れたり、エッチング液でエッチング除去する際に多量
の水素ガスが発生する問題がある。薄い下地金属層を形
成する方法としては他に無電解めっき法、真空蒸着法、
スパッタリング法などがある。無電解めっき法は絶縁基
板表面を物理的または化学的な方法で処理してその表面
を親水化・粗面化する工程を必要とするうえ、生成した
金属層〜基板間の接着力も低い。Therefore, when forming high-density wiring, 5
Although it is based on a copper-clad laminate using a thin copper foil of ~ 9 μm, it is an aluminum foil (a thickness of about 50
When mechanically or chemically removing (μm), the aluminum foil does not have mechanical strength, so the aluminum foil may break during peeling, or a large amount of hydrogen gas may be generated when etching away with an etching solution. There is. Other methods for forming a thin base metal layer include electroless plating, vacuum deposition,
There is a sputtering method and the like. The electroless plating method requires a step of treating the surface of the insulating substrate by a physical or chemical method to make the surface hydrophilic and rough, and also has a low adhesive force between the generated metal layer and the substrate.
【0004】このため、銅張り積層板の銅箔をエッチン
グした粗化面に無電解めっきを施し接着力を向上させる
方法も提案されているが、レジストパターン形成時露光
工程に於て粗化面で露光光が乱反射しレジストパターン
となるべきでない箇所が露光されるため、多量の現像残
りが発生するという欠点がある。真空蒸着法及びスパッ
タリング法等の真空成膜法は平滑な基板上にも安定して
1μm 以下の金属層を形成できるが、基板として例え
ば、ガラス布 - エポキシ積層板やガラス布 - ポリイミ
ド積層板等を用いる場合、ガラス布に吸着している水分
及び樹脂層に残存している溶剤分のために、蒸着やスパ
ッタリングなどで必要となる高真空下では水分や溶剤分
がガス化し、ガラス布〜樹脂界面での剥離やボイドが生
じてしまう。For this reason, a method has been proposed in which electroless plating is applied to the roughened surface of the copper-clad laminate to which the copper foil is etched to improve the adhesive strength. However, the roughened surface is used in the exposure step during resist pattern formation. However, since the exposure light is diffusely reflected at a position where a resist pattern should not be exposed, a large amount of undeveloped residue occurs. Vacuum deposition methods such as vacuum evaporation and sputtering are stable on smooth substrates.
A metal layer having a thickness of 1 μm or less can be formed, but when a glass cloth-epoxy laminated board or glass cloth-polyimide laminated board is used as the substrate, the water content adsorbed on the glass cloth and the solvent remaining in the resin layer Therefore, under high vacuum required for vapor deposition, sputtering, etc., water and solvent are gasified, and peeling or voids occur at the glass cloth-resin interface.
【0005】こうした理由から、蒸着やスパッタリング
工程を別工程で行い、金属薄層を形成後、配線板用有機
基材と積層する方法が提案されている(特開昭 53-1140
74号公報、特開昭 57-72851号公報、特開昭 57-87359号
公報、特開昭 57-142355号公報)。For these reasons, a method has been proposed in which a vapor deposition or sputtering process is performed in a separate process to form a thin metal layer and then laminated with an organic base material for wiring boards (Japanese Patent Laid-Open No. 53-1140).
74, JP-A-57-72851, JP-A-57-87359, and JP-A-57-142355).
【0006】[0006]
【発明が解決しようとする課題】しかしこれらの方法に
於いても、金属薄層の厚さが 3μm 以下になると、加熱
圧着時に基材のガラス布を構成するガラス繊維の交差部
に対応する金属薄層が損傷を受けるという問題がある。
この場合、金属薄層の厚さを厚くすれば金属薄層の損傷
は減少するが、セミアディティブ法を用いて、配線幅が
20〜50μm 程度の超高密度配線を安定的に形成するに
は下地金属が 3μm 以下に薄いことが不可欠である。本
発明は、高密度配線板の製造を可能とする金属薄層付き
絶縁基板の製造法を提供するものである。However, even in these methods, when the thickness of the metal thin layer is 3 μm or less, the metal corresponding to the intersection of the glass fibers forming the glass cloth of the base material during thermocompression bonding is used. The problem is that the thin layers are damaged.
In this case, increasing the thickness of the thin metal layer reduces damage to the thin metal layer, but using the semi-additive method reduces the wiring width.
In order to stably form ultra-high-density wiring of about 20 to 50 μm, it is essential that the underlying metal be as thin as 3 μm or less. The present invention provides a method for producing an insulating substrate with a thin metal layer, which enables production of a high-density wiring board.
【0007】[0007]
【課題を解決するための手段】本発明は、仮基板に金属
薄層を形成し、仮基板と、ガラス布に熱硬化性樹脂を含
浸した配線板用絶縁基材とを仮基板の金属薄層が配線板
用絶縁基材と面するように重ね合わせ、加熱圧着により
一体化後、仮基板を除去する金属薄層付き絶縁基板の製
造方法に於て、ガラス布と金属薄層の間に加熱圧着後の
厚さが 5μm以上である有機接着剤層を介して 一体化す
る金属薄層付き絶縁基板の製造法である。According to the present invention, a thin metal layer is formed on a temporary substrate, and the temporary substrate and an insulating base material for a wiring board in which a glass cloth is impregnated with a thermosetting resin are used. In the method for producing an insulating substrate with a thin metal layer, in which the layers are laminated so as to face the insulating base material for the wiring board, integrated by thermocompression bonding, and the temporary substrate is removed, It is a method of manufacturing an insulating substrate with a thin metal layer that is integrated through an organic adhesive layer having a thickness of 5 μm or more after thermocompression bonding.
【0008】本発明の実施例を図1によってに説明す
る。図1(a) 〜(d)は本発明の製造工程を説明する
断面図である。宇部興産(株)社製ポリイミドフィルム
(商品名 UPILEX)1の片面に電子ビーム蒸着装置(日
本真空技術(株)社製 EBV-6DA型)を用いて厚さ 1μm
の銅層2と厚さ100A のクロム層3を連続して形成した
(図1(a))。条件を次表に示す。An embodiment of the present invention will be described with reference to FIG. 1A to 1D are cross-sectional views for explaining the manufacturing process of the present invention. Ube Industries Co., Ltd. polyimide film (trade name UPILEX) 1 on one side using an electron beam vapor deposition device (Japan Vacuum Technology Co., Ltd. EBV-6DA type) thickness of 1μm
The copper layer 2 and the chromium layer 3 having a thickness of 100 A were continuously formed (FIG. 1 (a)). The conditions are shown in the following table.
【0009】[0009]
【表】 ━━━━━━━━━━━━━━━━━━━━━━━━━━━ 条 件 項 目 単 位 銅 クロム ━━━━━━━━━━━━━━━━━━━━━━━━━━━ 加速電圧 kV 10 8 圧 力 Torr 1×10-5 7×10-6 基板温度 ℃ RT RT 成膜速度 A/秒 200 5 ━━━━━━━━━━━━━━━━━━━━━━━━━━━ [Table] ━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━ Condition Condition Item Unit Unit Copper chrome ━━━━━━━━━━━━ ━━━━━━━━━━━━━━━ Accelerating voltage kV 10 8 Pressure Torr 1 × 10 -5 7 × 10 -6 Substrate temperature ℃ RT RT Deposition rate A / sec 200 5 ━━━━ ━━━━━━━━━━━━━━━━━━━━━━━
【0010】次に、このフィルムのクロム層3上にエポ
シキ系接着剤4を厚さ35μm に塗布し、80℃で15分間乾
燥させた(図1(b))。次に、接着剤4を内側にして
ガラス布エポキシプリプレグ(日立化成工業(株)社
製、商品名 GEA-67N)と 170℃、40kgf/cm2で 40分間加
熱圧着した(図1(c))。その後、ポリイミドフィル
ム1 〜 銅層2の間でポリイミドフィルムを引き剥した
(図1(d))。断面観察の結果、接着剤層厚さは 18μ
m であり、従来問題となっていた銅薄層の損傷は認めら
れなかった。この場合、銅薄層表面の平均中心粗さは
0.1μmである。Next, an epoxy adhesive 4 was applied on the chrome layer 3 of this film to a thickness of 35 μm and dried at 80 ° C. for 15 minutes (FIG. 1 (b)). Next, with the adhesive 4 inside, glass epoxy epoxy prepreg (manufactured by Hitachi Chemical Co., Ltd., trade name GEA-67N) was thermocompression bonded at 170 ° C and 40 kgf / cm2 for 40 minutes (Fig. 1 (c)). . Then, the polyimide film was peeled off between the polyimide film 1 and the copper layer 2 (FIG. 1 (d)). As a result of cross-section observation, the adhesive layer thickness is 18μ
Since it was m, no damage to the copper thin layer, which had been a problem in the past, was observed. In this case, the average center roughness of the thin copper layer surface is
It is 0.1 μm.
【0011】仮基板としては高分子、金属等のフィルム
状、板状、ロール状のものが使用される。金属薄層は仮
基板全面に形成したものだけでなく、所定の配線パター
ンをもつものでも良い。厚みは 5μm以下が好ましく、
更に好ましくは 3μm以下である。厚さは薄い程高密度
配線板の製造には都合が良い。仮基板と配線板用絶縁基
材との加熱圧着は、圧力は10〜70kgf/cm、温度は 100〜
200℃が好ましい。接着剤層は、ガラス布の基材を含ま
ないもので配線板用絶縁基材とは別に設けても良く、
又、ガラス基材に含浸する樹脂分を多くして結果として
ガラス基材表面の樹脂層が接着剤層となる用にしても良
い。接着剤層の厚さは、加熱圧着後 5μm以上となるよ
うにする必要がある。5μm未満であると金属薄層の損傷
が防止できない。本発明により得られた金属薄層付き絶
縁基板は、例えば銅箔にレジスト形成用表面処理を施し
た後、レジストパターン形成→パターンめっき→レジス
トパターン除去→クイックエッチングによる回路加工を
行うことにより配線板を製造する。As the temporary substrate, a film-shaped, plate-shaped or roll-shaped one made of polymer, metal or the like is used. The thin metal layer is not limited to one formed on the entire surface of the temporary substrate, but may be one having a predetermined wiring pattern. The thickness is preferably 5 μm or less,
More preferably, it is 3 μm or less. The thinner the thickness, the more convenient it is to manufacture a high-density wiring board. For thermocompression bonding between the temporary substrate and the insulating base material for the wiring board, the pressure is 10 to 70 kgf / cm, the temperature is 100 to
200 ° C is preferred. The adhesive layer does not include a glass cloth base material and may be provided separately from the wiring board insulating base material.
Further, the resin content impregnated into the glass base material may be increased so that the resin layer on the surface of the glass base material serves as an adhesive layer. The thickness of the adhesive layer should be 5 μm or more after thermocompression bonding. If it is less than 5 μm, damage to the thin metal layer cannot be prevented. The insulating substrate with a thin metal layer obtained by the present invention is a wiring board obtained by subjecting a copper foil to a resist forming surface treatment and then performing resist pattern formation → pattern plating → resist pattern removal → circuit processing by quick etching. To manufacture.
【0012】[0012]
【発明の効果】本発明により、従来問題となっていた金
属薄層転写時の金属薄層の損傷が激減し、微細回路パタ
ーン形成工程を安定化することができた。According to the present invention, the damage to the thin metal layer at the time of transferring the thin metal layer, which has been a problem in the past, is drastically reduced, and the fine circuit pattern forming process can be stabilized.
【図1】図1(a)〜(d)は本発明の製造工程を説明す
る断面図である。1A to 1D are cross-sectional views illustrating a manufacturing process of the present invention.
1.ポリイミドフィルム 2.銅 層 3.クロム層 4.接着剤層 5.ガラス布基材 1. Polyimide film 2. Copper layer 3. Chrome layer 4. Adhesive layer 5. Glass cloth substrate
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 B32B 17/04 A H05K 3/00 R 3/20 A 7511−4E // B29K 101:10 B29L 31:34 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical display location B32B 17/04 A H05K 3/00 R 3/20 A 7511-4E // B29K 101: 10 B29L 31 : 34
Claims (1)
仮基板と、ガラス基材に熱硬化性樹脂を含浸した配線板
用絶縁基材とを、仮基板の金属薄層が絶縁基材と面する
ように重ね合わせ、加熱圧着により一体化し、(C)仮
基板を除去する 金属薄層付き絶縁基板の製造法に於て、ガラス布と金属
薄層の間に加熱圧着後の厚さが 5μm以上である有機接
着剤層を介して一体化することを特徴とする金属薄層付
き絶縁基板の製造法。1. A thin metal layer is formed on a temporary substrate, and
The temporary substrate and the insulating base material for wiring board in which the glass base material is impregnated with the thermosetting resin are superposed so that the thin metal layer of the temporary substrate faces the insulating base material, and integrated by thermocompression bonding (C ) Removing the temporary substrate In the method of manufacturing an insulating substrate with a thin metal layer, the glass cloth and the thin metal layer should be integrated with an organic adhesive layer having a thickness of 5 μm or more after thermocompression bonding. And a method for manufacturing an insulating substrate with a thin metal layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP00966994A JP3534194B2 (en) | 1994-01-31 | 1994-01-31 | Manufacturing method of insulating substrate with thin metal layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP00966994A JP3534194B2 (en) | 1994-01-31 | 1994-01-31 | Manufacturing method of insulating substrate with thin metal layer |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003326135A Division JP2004007008A (en) | 2003-09-18 | 2003-09-18 | Insulating substrate with thin metal layer and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH07221444A true JPH07221444A (en) | 1995-08-18 |
JP3534194B2 JP3534194B2 (en) | 2004-06-07 |
Family
ID=11726624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP00966994A Expired - Lifetime JP3534194B2 (en) | 1994-01-31 | 1994-01-31 | Manufacturing method of insulating substrate with thin metal layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3534194B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003094571A (en) * | 2001-09-25 | 2003-04-03 | Matsushita Electric Works Ltd | Material for producing printed wiring board and its production method |
US7615277B2 (en) | 2003-11-14 | 2009-11-10 | Hitachi Chemical Company, Ltd. | Formation method of metal layer on resin layer, printed wiring board, and production method thereof |
US7629045B2 (en) | 2004-01-30 | 2009-12-08 | Hitachi Chemical Company, Ltd. | Adhesion assisting agent-bearing metal foil, printed wiring board, and production method of printed wiring board |
US7740936B2 (en) | 2004-11-10 | 2010-06-22 | Hitachi Chemical Co., Ltd. | Adhesion assisting agent fitted metal foil, and printed wiring board using thereof |
JP2013006278A (en) * | 2011-06-22 | 2013-01-10 | Hitachi Chemical Co Ltd | Metal thin film with adhesive, method for producing the same, copper-clad laminate, and method for producing the copper-clad laminate |
-
1994
- 1994-01-31 JP JP00966994A patent/JP3534194B2/en not_active Expired - Lifetime
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003094571A (en) * | 2001-09-25 | 2003-04-03 | Matsushita Electric Works Ltd | Material for producing printed wiring board and its production method |
US7615277B2 (en) | 2003-11-14 | 2009-11-10 | Hitachi Chemical Company, Ltd. | Formation method of metal layer on resin layer, printed wiring board, and production method thereof |
US7818877B2 (en) | 2003-11-14 | 2010-10-26 | Hitachi Chemical Company, Ltd. | Formation method of metal layer on resin layer |
US7964289B2 (en) | 2003-11-14 | 2011-06-21 | Hitachi Chemical Company, Ltd. | Formation method of metal layer on resin layer, printed wiring board, and production method thereof |
US7629045B2 (en) | 2004-01-30 | 2009-12-08 | Hitachi Chemical Company, Ltd. | Adhesion assisting agent-bearing metal foil, printed wiring board, and production method of printed wiring board |
US7862889B2 (en) | 2004-01-30 | 2011-01-04 | Hitachi Chemical Co., Ltd. | Adhesion assisting agent-bearing metal foil, printed wiring board, and production method of printed wiring board |
US8815334B2 (en) | 2004-01-30 | 2014-08-26 | Hitachi Chemical Co., Ltd. | Adhesion assisting agent-bearing metal foil, printed wiring board, and production method of printed wiring board |
US7740936B2 (en) | 2004-11-10 | 2010-06-22 | Hitachi Chemical Co., Ltd. | Adhesion assisting agent fitted metal foil, and printed wiring board using thereof |
JP2013006278A (en) * | 2011-06-22 | 2013-01-10 | Hitachi Chemical Co Ltd | Metal thin film with adhesive, method for producing the same, copper-clad laminate, and method for producing the copper-clad laminate |
Also Published As
Publication number | Publication date |
---|---|
JP3534194B2 (en) | 2004-06-07 |
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