JP2004007008A - Insulating substrate with thin metal layer and its manufacturing method - Google Patents
Insulating substrate with thin metal layer and its manufacturing method Download PDFInfo
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- JP2004007008A JP2004007008A JP2003326135A JP2003326135A JP2004007008A JP 2004007008 A JP2004007008 A JP 2004007008A JP 2003326135 A JP2003326135 A JP 2003326135A JP 2003326135 A JP2003326135 A JP 2003326135A JP 2004007008 A JP2004007008 A JP 2004007008A
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Abstract
Description
本発明は、高密度配線板の製造に使用される金属薄層付き絶縁基板及びその製造法に関する。 The present invention relates to an insulating substrate with a thin metal layer used for manufacturing a high-density wiring board and a method for manufacturing the same.
配線板の製造に使用される銅張り積層板としては、ステンレススチールの回転ドラム上に電解析出させた銅箔と紙やガラス基材に熱硬化性樹脂を含浸されたプリプレグとを積層したものがある。この場合、銅箔の厚さとしては、18μm、35μm、50μm程度と厚いものが主流である。上記のような銅張り積層板を使用した配線板の製造方法としては、銅張り積層板をエッチングして回路加工を行うエッチドフォイル法やセミアディティブ法がある。エッチドフォイル法は、サイドエッチングの問題があり高密度配線の形成は困難である。セミアディティブ法に於ける配線の微細・高密度化は、下地金属層(銅箔)の厚さに依存している。すなわち、エッチングする下地金属層の厚さが薄いほどエッチング精度が高くなる。 The copper-clad laminate used in the manufacture of wiring boards is a laminate of copper foil electrolytically deposited on a stainless steel rotating drum and prepreg impregnated with thermosetting resin on a paper or glass base material There is. In this case, the thickness of the copper foil is as large as about 18 μm, 35 μm, and 50 μm. As a method of manufacturing a wiring board using a copper-clad laminate as described above, there are an etched foil method and a semi-additive method in which a circuit is processed by etching the copper-clad laminate. The etched foil method has a problem of side etching, and it is difficult to form a high-density wiring. The fineness and high density of wiring in the semi-additive method depend on the thickness of the underlying metal layer (copper foil). That is, the smaller the thickness of the underlying metal layer to be etched, the higher the etching accuracy.
そこで高密度配線を形成する場合には、5〜9μmの薄い銅箔を用いた銅張り積層板をベースとしているが、銅箔のキャリアーであるアルミ箔(厚さ約50μm)を物理的あるいは化学的に除去する際に、アルミ箔の機械的強度がないために引き剥す途中でアルミ箔が破れたり、エッチング液でエッチング除去する際に多量の水素ガスが発生する問題がある。薄い下地金属層を形成する方法としては他に無電解めっき法、真空蒸着法、スパッタリング法などがある。無電解めっき法は絶縁基板表面を物理的または化学的な方法で処理してその表面を親水化・粗面化する工程を必要とするうえ、生成した金属層〜基板間の接着力も低い。 Therefore, when forming a high-density wiring, a copper-clad laminate using a thin copper foil of 5 to 9 μm is used as a base, but an aluminum foil (about 50 μm in thickness) which is a carrier of the copper foil is physically or chemically formed. When the aluminum foil is mechanically removed, there is a problem that the aluminum foil is broken during the peeling due to lack of mechanical strength, and a large amount of hydrogen gas is generated when the aluminum foil is removed by etching with an etching solution. Other methods for forming a thin underlying metal layer include an electroless plating method, a vacuum evaporation method, and a sputtering method. The electroless plating method requires a step of treating the surface of the insulating substrate by a physical or chemical method to make the surface hydrophilic and rough, and also has low adhesion between the generated metal layer and the substrate.
このため、銅張り積層板の銅箔をエッチングした粗化面に無電解めっきを施し接着力を向上させる方法も提案されているが、レジストパターン形成時露光工程に於て粗化面で露光光が乱反射しレジストパターンとなるべきでない箇所が露光されるため、多量の現像残りが発生するという欠点がある。真空蒸着法及びスパッタリング法等の真空成膜法は平滑な基板上にも安定して1μm以下の金属層を形成できるが、基板として例えば、ガラス布−エポキシ積層板やガラス布−ポリイミド積層板等を用いる場合、ガラス布に吸着している水分及び樹脂層に残存している溶剤分のために、蒸着やスパッタリングなどで必要となる高真空下では水分や溶剤分がガス化し、ガラス布〜樹脂界面での剥離やボイドが生じてしまう。 For this reason, a method has been proposed in which the roughened surface of the copper-clad laminate obtained by etching the copper foil is subjected to electroless plating to improve the adhesive strength. Is irregularly reflected to expose a portion that should not be a resist pattern, so that a large amount of development residue remains. Vacuum film formation methods such as a vacuum deposition method and a sputtering method can stably form a metal layer of 1 μm or less on a smooth substrate, but the substrate may be, for example, a glass cloth-epoxy laminate or a glass cloth-polyimide laminate. In the case of using, due to the moisture adsorbed on the glass cloth and the solvent remaining in the resin layer, the water and the solvent are gasified under a high vacuum necessary for vapor deposition or sputtering, and the glass cloth to resin Peeling and voids occur at the interface.
こうした理由から、蒸着やスパッタリング工程を別工程で行い、金属薄層を形成後、配線板用有機基材と積層する方法が提案されている(特開昭53−114074号公報、特開昭57−72851号公報、特開昭57−87359号公報、特開昭57−142355号公報)。
しかしこれらの方法に於いても、金属薄層の厚さが3μm以下になると、加熱圧着時に基材のガラス布を構成するガラス繊維の交差部に対応する金属薄層が損傷を受けるという問題がある。この場合、金属薄層の厚さを厚くすれば金属薄層の損傷は減少するが、セミアディティブ法を用いて、配線幅が20〜50μm程度の超高密度配線を安定的に形成するには下地金属が3μm以下に薄いことが不可欠である。本発明は、高密度配線板の製造を可能とする金属薄層付き絶縁基板及びその製造法を提供するものである。 However, even in these methods, when the thickness of the thin metal layer becomes 3 μm or less, there is a problem that the thin metal layer corresponding to the intersection of the glass fibers constituting the glass cloth of the base material is damaged at the time of thermocompression bonding. is there. In this case, if the thickness of the thin metal layer is increased, damage to the thin metal layer is reduced. However, it is necessary to use a semi-additive method to stably form an ultra-high-density wiring having a wiring width of about 20 to 50 μm. It is essential that the base metal is thinner than 3 μm. The present invention provides an insulating substrate with a thin metal layer and a method for manufacturing the same, which enables the manufacture of a high-density wiring board.
本発明は、以下のことを特徴とする。
(1)仮基板に金属薄層を形成し、仮基板と、ガラス基材に熱硬化性樹脂を含浸した配線板用絶縁基材とを、仮基板の金属薄層が前記絶縁基材と面するように重ね合わせ、加熱圧着により一体化し、仮基板を除去する金属薄層付き絶縁基板の製造法に於て、ガラス基材に含浸する樹脂分を多くし、ガラス基材表面の樹脂層が接着剤層となり、加熱圧着後、絶縁基材のガラス布と金属薄層の間の接着剤層の厚さが5μm以上であることを特徴とする金属薄層付き絶縁基板の製造法。
(2)金属薄層の厚みが5μm以下である(1)に記載の金属薄層付き絶縁基板の製造法。
(3)ガラス基材に熱硬化性樹脂を含浸した絶縁基材のガラス基材表面の熱硬化性樹脂層が接着剤層となり、該絶縁基材の外側に金属薄層が設けられた金属薄層付き絶縁基板において、金属薄層付き絶縁基板の少なくとも片面が、絶縁基材のガラス布と金属薄層の間の接着剤層の厚さが5μm以上である金属薄層付き絶縁基板。
(4)該金属薄層の厚みが5μm以下である(3)に記載の金属薄層付き絶縁基板。
(5)ガラス基材に熱硬化性樹脂を含浸した絶縁基材のガラス基材表面の熱硬化性樹脂層が接着剤層となり、該絶縁基材の外側に金属薄層が設けられた金属薄層付き絶縁基板の金属薄層の厚みが5μm以下であり、かつ金属薄層付き絶縁基板の少なくとも片面が、絶縁基材のガラス布と金属薄層の間の接着剤層の厚さが5μm以上である金属薄層付き絶縁基板を用い製造した配線板であって、該金属薄層に銅めっきを行った後、回路加工を行った配線板。
The present invention is characterized by the following.
(1) A thin metal layer is formed on a temporary substrate, and the temporary substrate and an insulating substrate for a wiring board in which a glass base material is impregnated with a thermosetting resin. In the method of manufacturing an insulating substrate with a thin metal layer that removes the temporary substrate by laminating and integrating by heating and pressing, the amount of resin impregnated into the glass substrate is increased, and the resin layer on the surface of the glass substrate is A method for producing an insulating substrate with a thin metal layer, wherein the thickness of the adhesive layer between the glass cloth of the insulating base material and the thin metal layer is 5 μm or more after forming an adhesive layer and heating and pressing.
(2) The method for producing an insulating substrate with a thin metal layer according to (1), wherein the thickness of the thin metal layer is 5 μm or less.
(3) A thin metal sheet in which a thermosetting resin layer on the surface of a glass substrate of an insulating substrate in which a thermosetting resin is impregnated into a glass substrate serves as an adhesive layer, and a thin metal layer is provided outside the insulating substrate. An insulating substrate with a thin metal layer, wherein at least one surface of the insulating substrate with a thin metal layer has a thickness of an adhesive layer between the glass cloth of the insulating base material and the thin metal layer of 5 μm or more.
(4) The insulating substrate with a thin metal layer according to (3), wherein the thickness of the thin metal layer is 5 μm or less.
(5) A thin metal sheet in which a thermosetting resin layer on the surface of a glass substrate of an insulating substrate in which a glass substrate is impregnated with a thermosetting resin serves as an adhesive layer, and a thin metal layer is provided outside the insulating substrate. The thickness of the thin metal layer of the insulating substrate with a layer is 5 μm or less, and the thickness of the adhesive layer between the glass cloth of the insulating base material and the thin metal layer is at least 5 μm on at least one side of the insulating substrate with the thin metal layer. A wiring board manufactured by using the insulating substrate with a thin metal layer, wherein the metal thin layer is plated with copper and then subjected to circuit processing.
本発明により、従来問題となっていた金属薄層転写時の金属薄層の損傷が激減し、微細回路パターン形成工程を安定化することができる。 According to the present invention, damage to the thin metal layer during transfer of the thin metal layer, which has conventionally been a problem, can be drastically reduced, and the fine circuit pattern forming step can be stabilized.
仮基板としては高分子、金属等のフィルム状、板状、ロール状のものが使用される。金属薄層は仮基板全面に形成したものだけでなく、所定の配線パターンをもつものでも良い。厚みは5μm以下が好ましく、更に好ましくは3μm以下である。厚さは薄い程高密度配線板の製造には都合が良い。仮基板と配線板用絶縁基材との加熱圧着は、圧力は10〜70kgf/cm2、温度は100〜200℃が好ましい。ガラス基材に含浸する樹脂分を多くして、結果としてガラス基材表面の樹脂層が接着剤層となるようにする。接着剤層の厚さは、加熱圧着後5μm以上となるようにする必要がある。5μm未満であると金属薄層の損傷が防止できない。本発明により得られた金属薄層付き絶縁基板は、例えば銅箔にレジスト形成用表面処理を施した後、レジストパターン形成→パターンめっき→レジストパターン除去→クイックエッチングによる回路加工を行うことにより配線板を製造する。
As the temporary substrate, a film, a plate, or a roll of a polymer or metal is used. The metal thin layer is not limited to one formed on the entire surface of the temporary substrate, but may be one having a predetermined wiring pattern. The thickness is preferably 5 μm or less, more preferably 3 μm or less. The thinner the thickness, the more convenient it is to manufacture a high-density wiring board. The pressure for heating and compression between the temporary substrate and the insulating substrate for a wiring board is preferably 10 to 70 kgf / cm 2 , and the temperature is preferably 100 to 200 ° C. The amount of resin impregnated in the glass substrate is increased so that the resin layer on the surface of the glass substrate becomes an adhesive layer as a result. The thickness of the adhesive layer needs to be 5 μm or more after thermocompression bonding. If it is less than 5 μm, damage to the thin metal layer cannot be prevented. The insulating substrate with a thin metal layer obtained according to the present invention is obtained by, for example, subjecting a copper foil to a surface treatment for forming a resist, forming a resist pattern → pattern plating → removing the resist pattern → circuit processing by quick etching to obtain a wiring board. To manufacture.
Claims (5)
A thermosetting resin layer on the surface of a glass substrate of an insulating substrate in which a thermosetting resin is impregnated into a glass substrate serves as an adhesive layer, and a thin metal layer provided with a thin metal layer outside the insulating substrate. A metal having a thickness of a metal thin layer of a substrate of 5 μm or less, and at least one surface of an insulating substrate with a metal thin layer having a thickness of an adhesive layer between a glass cloth of the insulating base material and the metal thin layer of 5 μm or more. A wiring board manufactured using an insulating substrate with a thin layer, wherein the metal thin layer is plated with copper and then subjected to circuit processing.
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JP2003326135A JP2004007008A (en) | 2003-09-18 | 2003-09-18 | Insulating substrate with thin metal layer and its manufacturing method |
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JP00966994A Division JP3534194B2 (en) | 1994-01-31 | 1994-01-31 | Manufacturing method of insulating substrate with thin metal layer |
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