JPH07218364A - Semiconductor pressure gage - Google Patents

Abstract

PURPOSE:To reduce a size and sealed substance amount, to scarcely allow influence of an environmental temperature and to improve temperature characteristics by so providing a diaphragm of an elastic material near a silicon semiconductor pressure detector as to cover the detector. CONSTITUTION:A silicon semiconductor pressure detector 62 is provided in contact with one surface of a board 61. The detector 62 forms a diaphragm, and detects a pressure by a strain detecting sensor. A diaphragm 63 made of synthetic resin having elasticity so provided near the detector 62 as to cover the detector 62, and a sealed chamber 64 is formed of the diaphragm 63, the detector 62 and the board 61. When a measuring pressure Pm is applied to the diaphragm 63, the pressure Pm is applied to the diaphragm of the detector 62 via sealed substance 65, and a differential pressure from the atmospheric pressure of an atmospheric reference chamber 69 is detected by the sensor of the detector 62. In this case, an entire apparatus is reduced by providing the diaphragm 63 near the detector 62, and temperature characteristics of the apparatus are improved by reducing an amount of the substrate 64 and scarcely allowing influence of an ambient temperature.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure gauge which can be miniaturized and has good temperature characteristics.

[0002]

2. Description of the Related Art FIG. 6 is a structural explanatory view of a conventional example which has been generally used, for example, an actual flat plate 2-60045.
No. In the figure, 1 is a sensor chip made of a semiconductor.

Reference numeral 11 is a recess provided in the sensor chip 1 and forming a diaphragm 12 in the sensor chip 1. Reference numeral 13 is a strain detection sensor provided on the diaphragm 12. One side of the reference numeral 2 is fixed to the sensor chip 1
And a substrate forming the atmospheric pressure reference chamber 21.

Reference numeral 22 denotes an atmospheric pressure reference chamber 21 penetrating the substrate 2.
Is a through hole communicating with. Reference numeral 3 is an atmosphere conducting pipe, one end of which is connected to the other surface of the substrate 2 and which communicates with the through hole 22 and whose other end is open to the atmosphere.

Reference numeral 4 is a base to which the atmosphere conducting pipe is fixed. Reference numeral 5 denotes a body which is fixed to the base 4, constitutes the sensor chip 1 and the measurement chamber 51, and constitutes the liquid contact diaphragm 52 and the liquid contact diaphragm chamber 53. Reference numeral 54 is a communication hole that connects the measurement chamber 51 and the liquid contact diaphragm chamber 53.

Reference numeral 55 designates a measurement chamber 51 and a liquid contact diaphragm chamber 5
3 is a fill liquid that fills 3 and the communication hole 54. Reference numeral 56 is a case that covers the base 4. A case 57 covers the body 5.

In the above structure, the liquid contact diaphragm 5
When the measurement pressure Pm is applied to 2, the measurement pressure Pm is applied to the diaphragm 12 via the filled liquid 55, and the atmospheric pressure reference chamber 21
The differential pressure with respect to the atmospheric pressure is detected by the strain detection sensor 13.

[0008]

However, in such an apparatus, since the liquid contact diaphragm 52 is provided on the outer surface of the body 5, the apparatus becomes large in size.
In addition, the amount of the enclosed liquid 55 also increases and is easily affected by the ambient temperature, and the temperature characteristics are not good. The present invention solves this problem.

An object of the present invention is to provide a semiconductor pressure gauge which can be miniaturized and has good temperature characteristics.

[0010]

In order to achieve this object, the present invention provides (1) a substrate, a silicon semiconductor pressure detecting element provided in contact with one surface of the substrate, and the substrate being sandwiched. First to do
And a second body, wherein the silicon semiconductor pressure detecting element is close to the silicon semiconductor pressure detecting element, covers the silicon semiconductor pressure detecting element, the substrate, and the elastic material forming the enclosure chamber. A diaphragm, an encapsulating material composed of a gel-like substance or an elastic resin or liquid substance enclosed in the enclosing chamber, and a first chamber that is provided in contact with the one surface side of the substrate and constitutes the measuring chamber. And a second body that is in contact with the other surface side of the substrate and that forms a reference chamber with the silicon semiconductor pressure detecting element through a pressure guide hole provided in the substrate. Semiconductor pressure gauge. (2) A substrate, a silicon semiconductor pressure detection element provided on one surface of the substrate in contact with the first surface, and a first substrate for sandwiching the substrate
And a second body, a flat plate-shaped substrate, the silicon semiconductor pressure detecting element close to the silicon semiconductor pressure detecting element, and covering the silicon semiconductor pressure detecting element, the substrate, and a sealed chamber. Is provided in contact with the one surface side of the substrate, and a diaphragm made of an elastic synthetic resin or rubber that constitutes the A first body that constitutes the diaphragm and the measurement chamber, and a second chamber that constitutes the reference chamber and the silicon semiconductor pressure detection element through a pressure guide hole provided in contact with the other surface side of the substrate and provided in the substrate. A semiconductor pressure gauge having two bodies. (3) A substrate, a silicon semiconductor pressure detecting element provided in contact with one surface of the substrate, and a first substrate for sandwiching the substrate
And a second body, the substrate having a concave portion, the silicon semiconductor pressure detecting element that is close to the silicon semiconductor pressure detecting element and covers the silicon semiconductor pressure detecting element and the concave opening of the substrate. The element, the substrate, and the encapsulation chamber, and a diaphragm made of a flat elastic material made of synthetic resin or rubber having elasticity, and an encapsulation made of a gel-like substance or an elastic resin or liquid substance enclosed in the enclosure Through a substance, a first body provided in contact with the one surface side of the substrate and forming a diaphragm and a measurement chamber, and a pressure guide hole provided in contact with the other surface side of the substrate and provided in the substrate. A semiconductor manometer comprising the silicon semiconductor pressure detecting element and a second body forming a reference chamber. Is configured.

[0011]

In the above structure, when the measuring pressure is applied, the measuring diaphragm is displaced by the measuring pressure. The displacement of the measuring diaphragm gives an electrical signal output corresponding to the measured pressure. Hereinafter, detailed description will be given based on examples.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is an explanatory view of the essential structure of an embodiment of the present invention. In the figure, the same symbols as those in FIG. 6 represent the same functions. Only parts different from FIG. 6 will be described below. Reference numeral 61 is a flat board, and in this case, a printed board is used.

Reference numeral 62 is a silicon semiconductor pressure detecting element which is provided so as to be in contact with one surface of the substrate 61. In this case, the element in which the strain detection sensor 13 is provided on the sensor chip 1 is used. 63 is close to the silicon semiconductor pressure detecting element 62,
Is a diaphragm that covers the above, forms the silicon semiconductor pressure detecting element 62, the substrate 61, and the sealed chamber 64, and is made of elastic synthetic resin or rubber.

In this case, it is made of rubber and has a hemispherical shape. In this case, the periphery of the diaphragm 63 is secured together with the substrate 61 by fixing a first body 66 and a second body 68, which will be described later, to fix and seal. 65 is
It is an encapsulating substance made of a gel-like substance, a resin having elasticity, or a liquid substance enclosed in the enclosure chamber 64.

In this case, a silicon gel-like substance is used. Reference numeral 66 is a first body that is provided in contact with one surface side of the substrate 61 and forms the diaphragm 63 and the measurement chamber 67. Reference numeral 68 is a second body that is provided in contact with the other surface side of the substrate 61 and that constitutes the silicon semiconductor pressure detection element 62 and the reference chamber 69 via the pressure guiding hole 611 provided in the substrate 61.

The first body 66 and the second body 6
In this case, 8 is made of plastic, but of course metal may be used. 71 is a mounting screw provided on the first body 66, and 72 is the first body 6.
6 is an O-ring.

Reference numeral 73 is a signal processing circuit composed of electric circuit parts mounted on the print attached to the substrate 61. The electrical signal generated by the silicon semiconductor pressure detecting element 62 is sent to the substrate 61 by a thin lead wire and is transmitted to the signal processing circuit 73 through the through hole on the substrate 61. In the signal processing circuit 73, necessary signal processing is performed and an electric signal proportional to the measured pressure Pm is output.

In the above structure, the measuring pressure P is applied to the diaphragm 63.
When m is added, the diaphragm 1
The measurement pressure Pm is added to 2, and the differential pressure from the atmospheric pressure of the atmospheric pressure reference chamber 21 is detected by the strain detection sensor 13. Therefore,
The diaphragm 63 is located inside the first body 66 and is close to the silicon semiconductor pressure detecting element.

Is provided. As a result, the device can be downsized. In addition, the amount of the encapsulating substance 65 can be reduced, the influence of the ambient temperature is reduced, and the temperature characteristics can be improved.

FIG. 2 is an explanatory view of the essential structure of another embodiment of the present invention. In this embodiment, the diaphragm 81 is made of bellows. The displacement amount of the diaphragm 81 can be made large.

FIG. 3 is an explanatory view of the essential structure of another embodiment of the present invention. In this embodiment, a recess 92 is provided in the substrate 91, and the silicon semiconductor pressure detecting element 62 is provided in the recess 92.
And an encapsulating substance 65 is provided. A flat plate-shaped diaphragm 93 can be used, and a semiconductor pressure gauge can be obtained in which the diaphragm 93 is easy to manufacture and inexpensive.

FIG. 4 is an explanatory view of the essential structure of another embodiment of the present invention. In this embodiment, a glass substrate 95 is provided between the substrate 61 and the sensor chip 1.
In this case, mechanical disturbance due to external vibration or heat change is sufficiently attenuated by this glass substrate, and a signal with a good S / N ratio can be obtained even when the measurement environment such as disturbance noise is bad. It is characterized by being

FIG. 5 is a diagram showing an example of actual use of the device of the present invention. In the figure, A is a pipe, B is a measurement fluid flowing in the pipe A, and C is a semiconductor pressure gauge of the present invention attached to the pipe A via a mounting screw 71.

Although the encapsulating substance 65 has been described as a gel-like substance in the above-mentioned embodiments, the encapsulating substance 65 is not limited to this and may be, for example, an elastic resin or a liquid substance. In short, it is sufficient that the measured pressure Pm can be transmitted.

However, for example, in contrast to silicone oil as a liquid substance, gel material or silicon as an elastic resin has a volume expansion coefficient of about 1/2. Generally, the volume expansion coefficient is considered to be smaller for a liquid substance than a gel-like substance or a resin having elasticity. Therefore, when the encapsulating substance 65 is a gel-like substance or a resin having elasticity for a liquid substance, Therefore, the temperature characteristics can be further improved.

In the above embodiment, the diaphragm 63 is used.
Was explained as rubber, but it is not limited to this, for example,
Resin or metal having elasticity may be used. In short, the measurement chamber 67 and the enclosure chamber 64 may be separated so that the pressure Pm can be transmitted.

However, for example, for shocking measurement pressure,
In the case of the metal diaphragm 63, the silicon semiconductor pressure detecting element 6
When it hits 2, the silicon semiconductor pressure detection element 6
2 may be destroyed. On the other hand, in the case of rubber or resin having elasticity, there is no such fear.

Therefore, in the case of rubber or resin having elasticity, the diaphragm 63 can be provided closer to the silicon semiconductor pressure detecting element 62, and a semiconductor pressure gauge having a smaller size and improved temperature characteristics can be obtained.

[0029]

As described above, according to the present invention, (1) a substrate, a silicon semiconductor pressure detecting element provided in contact with one surface of the substrate, and a first substrate for sandwiching the substrate
And a second body, wherein the silicon semiconductor pressure detecting element is close to the silicon semiconductor pressure detecting element, covers the silicon semiconductor pressure detecting element, the substrate, and the elastic material forming the enclosure chamber. A diaphragm, an encapsulant made of a gel-like substance or a resin or liquid substance having elasticity enclosed in the enclosure, and a first chamber which is provided in contact with the one surface side of the substrate and constitutes the measurement chamber. And a second body that is in contact with the other surface side of the substrate and that forms a reference chamber with the silicon semiconductor pressure detecting element through a pressure guide hole provided in the substrate. Semiconductor pressure gauge. (2) A substrate, a silicon semiconductor pressure detection element provided on one surface of the substrate in contact with the first surface, and a first substrate for sandwiching the substrate
And a second body, a flat plate-shaped substrate, the silicon semiconductor pressure detecting element close to the silicon semiconductor pressure detecting element, and covering the silicon semiconductor pressure detecting element, the substrate, and a sealed chamber. Is provided in contact with the one surface side of the substrate, and a diaphragm made of an elastic synthetic resin or rubber that constitutes the A first body that constitutes the diaphragm and the measurement chamber, and a second chamber that constitutes the reference chamber and the silicon semiconductor pressure detection element through a pressure guide hole provided in contact with the other surface side of the substrate and provided in the substrate. A semiconductor pressure gauge having two bodies. (3) A substrate, a silicon semiconductor pressure detecting element provided in contact with one surface of the substrate, and a first substrate for sandwiching the substrate
And a second body, the substrate having a concave portion, the silicon semiconductor pressure detecting element that is close to the silicon semiconductor pressure detecting element and covers the silicon semiconductor pressure detecting element and the concave opening of the substrate. The element, the substrate, and the encapsulation chamber, and a diaphragm made of a flat elastic material made of synthetic resin or rubber having elasticity, and an encapsulation made of a gel-like substance or an elastic resin or liquid substance enclosed in the enclosure Through a substance, a first body provided in contact with the one surface side of the substrate and forming a diaphragm and a measurement chamber, and a pressure guide hole provided in contact with the other surface side of the substrate and provided in the substrate. A semiconductor manometer comprising the silicon semiconductor pressure detecting element and a second body forming a reference chamber. Configured.

As a result, according to claim 1, the diaphragm is the first
Is provided in the body of the device in proximity to the silicon semiconductor pressure detecting element. Therefore, the device can be downsized. In addition, the amount of the encapsulating substance can be reduced, the influence of the ambient temperature is reduced, and the temperature characteristics can be improved.

According to the second aspect, since the silicon semiconductor pressure detecting element, the encapsulating substance and the diaphragm are formed on the flat substrate, the substrate can be easily manufactured and the semiconductor pressure gauge can be obtained at a low cost.

According to the third aspect of the present invention, the substrate is provided with a recess, and the recess is provided with the silicon semiconductor pressure detecting element and the encapsulating substance. A semiconductor pressure gauge can be obtained in which a flat diaphragm can be used and the diaphragm can be easily manufactured at low cost.

Therefore, according to the present invention, downsizing can be achieved,
A semiconductor pressure gauge having good temperature characteristics can be obtained.

[Brief description of drawings]

FIG. 1 is an explanatory diagram of a main part configuration of an embodiment of the present invention.

FIG. 2 is an explanatory diagram of a main part configuration of another embodiment of the present invention.

FIG. 3 is an explanatory diagram of a main part configuration of another embodiment of the present invention.

FIG. 4 is an explanatory diagram of a main part configuration of another embodiment of the present invention.

FIG. 5 is an explanatory diagram of a main part configuration of a usage example of the device of the present invention.

FIG. 6 is an explanatory diagram of a configuration of a conventional example that is generally used from the past.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Sensor chip 11 ... Recess 12 ... Diaphragm 13 ... Strain detection sensor 61 ... Substrate 62 ... Silicon semiconductor pressure detection element 63 ... Diaphragm 64 ... Encapsulation chamber 65 ... Encapsulation material 66 ... First body 67 ... Measurement chamber 68 ... Second Body 69 ... Reference chamber 71 ... Mounting screw 72 ... O-ring 73 ... Printed board 81 ... Diaphragm 91 ... Substrate 92 ... Recessed portion 93 ... Diaphragm 95 ... Glass substrate

Claims (3)

[Claims] 1. A semiconductor pressure gauge comprising: a substrate; a silicon semiconductor pressure detecting element, one surface of which is in contact with one surface of the substrate; and a first and a second body for sandwiching the substrate. A diaphragm made of an elastic material that covers the silicon semiconductor pressure detecting element in close proximity to the semiconductor pressure detecting element, forms a sealing chamber with the silicon semiconductor pressure detecting element, and a gel-like substance or elasticity sealed in the sealing chamber. An encapsulating substance made of a resin or a liquid substance having: a first body provided in contact with the one surface side of the substrate to form the diaphragm and a measurement chamber; and the substrate provided in contact with the other surface side of the substrate. 2. A semiconductor pressure gauge, comprising: the silicon semiconductor pressure detecting element and a second body forming a reference chamber via a pressure guiding hole provided in. 2. A semiconductor pressure gauge, comprising: a substrate; a silicon semiconductor pressure detecting element, one surface of which is in contact with one surface of the substrate; and a first and a second body for sandwiching the substrate. A substrate, a diaphragm that is close to the silicon semiconductor pressure detecting element, covers the silicon semiconductor pressure detecting element, forms a sealed chamber with the silicon semiconductor pressure detecting element, and is made of an elastic synthetic resin or rubber; An encapsulating substance made of a gel-like substance or an elastic resin or liquid substance enclosed in an enclosing chamber, a first body provided in contact with the one surface side of the substrate to form the diaphragm and a measurement chamber, the substrate And a second body forming a reference chamber via a pressure guide hole provided in contact with the other surface of the substrate and provided in the substrate. Semiconductor pressure gauge. 3. A semiconductor pressure gauge comprising: a substrate; a silicon semiconductor pressure detecting element, one surface of which is in contact with one surface of the substrate; and a first and a second body for sandwiching the substrate. A substrate having the same, a silicon semiconductor pressure detecting element provided in the concave portion with one surface in contact with the bottom surface of the concave portion, a silicon semiconductor pressure detecting element close to the silicon semiconductor pressure detecting element, and a concave opening of the substrate A diaphragm made of a flat plate-like elastic material made of synthetic resin or rubber having elasticity to form the silicon semiconductor pressure detecting element, the substrate, and the enclosing chamber, and a gel-like substance or elasticity enclosed in the enclosing chamber. An encapsulating substance made of a resin or a liquid substance having: a first body which is provided in contact with the one surface side of the substrate to form the diaphragm and a measurement chamber; and the other surface side of the substrate. Semiconductor pressure gauge, characterized by comprising a second body constituting the silicon semiconductor pressure sensing element and the reference chamber through the pressure guide hole provided in the substrate provided in contact.