JPH07202208A - Transparent insulating substrate and thin film transistor - Google Patents
Transparent insulating substrate and thin film transistorInfo
- Publication number
- JPH07202208A JPH07202208A JP33399593A JP33399593A JPH07202208A JP H07202208 A JPH07202208 A JP H07202208A JP 33399593 A JP33399593 A JP 33399593A JP 33399593 A JP33399593 A JP 33399593A JP H07202208 A JPH07202208 A JP H07202208A
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- Japan
- Prior art keywords
- substrate
- thin film
- transparent insulating
- insulating substrate
- film transistor
- Prior art date
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- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、透明性絶縁基板とその
上に形成された多結晶シリコン薄膜トランジスタから構
成される薄膜トランジスタに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor composed of a transparent insulating substrate and a polycrystalline silicon thin film transistor formed thereon.
【０００２】[0002]
【従来の技術】近年ガラス基板上に薄膜能動デバイスを
形成する技術は、大面積透過型液晶ディスプレイや密着
型イメージセンサ等を初めとする各所に応用がめざさ
れ、研究が活発化している。そのなかでも多結晶シリコ
ン薄膜トランジスタは周辺駆動回路も一体化した全薄膜
化デバイスを作成できる最も有望なデバイスとして注目
を集めている。特にエキシマレーザアニール法を用いた
薄膜トランジスタは低温で高移動度なトランジスタを実
現する手段として最も有効である。エキシマレーザアニ
ール法は基板上に形成されたシリコン薄膜を紫外パルス
光であるエキシマレーザ照射によって、瞬間的に溶融再
結晶を行う方法であり、基板に熱ダメージを与えること
なく、シリコン膜のみ高温処理を行えるため特性を向上
できる。2. Description of the Related Art In recent years, a technique for forming a thin film active device on a glass substrate has been aimed at application to various places such as a large area transmissive liquid crystal display and a contact image sensor, and research has been activated. Among them, the polycrystalline silicon thin film transistor has been attracting attention as the most promising device that can make an all-thinned device in which peripheral driving circuits are integrated. In particular, a thin film transistor using the excimer laser annealing method is most effective as a means for realizing a transistor having high mobility at low temperature. The excimer laser annealing method is a method in which a silicon thin film formed on a substrate is instantaneously melted and recrystallized by irradiating an excimer laser that is ultraviolet pulsed light. Therefore, the characteristics can be improved.
【０００３】この方法を用いた薄膜トランジスタの構造
を図４に示す。ガラス基板１０２上に半導体活性層２０
１としてシリコン薄膜をＣＶＤ法等で成膜し、紫外レー
ザ光３０１であるエキシマレーザ光を照射し、多結晶化
された半導体層２０２へと半導体膜の改質を行う。この
多結晶化半導体膜２０２上にゲート絶縁膜４０１となる
シリコン酸化膜、ゲート電極層５０１となるポリシリ層
を形成し、電極パターンニングを行う。ソース・ドレイ
ン領域はイオン注入法により形成し、層間絶縁膜を形成
した後、アルミニウムを用いて配線電極層７０１を形成
する。この方法で作製した薄膜トランジスタでは、Ｎ
型、Ｐ型ともに移動度１００ｃｍ2 ／Ｖ．ｓ以上の高移
動度が得られている。The structure of a thin film transistor using this method is shown in FIG. Semiconductor active layer 20 on glass substrate 102
As No. 1, a silicon thin film is formed by a CVD method or the like, and an excimer laser light which is an ultraviolet laser light 301 is irradiated to modify the semiconductor film into a polycrystallized semiconductor layer 202. A silicon oxide film to be the gate insulating film 401 and a polysilicon layer to be the gate electrode layer 501 are formed on the polycrystalline semiconductor film 202, and electrode patterning is performed. The source / drain regions are formed by an ion implantation method, an interlayer insulating film is formed, and then a wiring electrode layer 701 is formed using aluminum. In the thin film transistor manufactured by this method, N
Type and P type have a mobility of 100 cm 2 / V. High mobility of s or more is obtained.
【０００４】また図５に示すように、シリコン酸化膜２
０１を基板裏面からも同時にレーザ照射する事によって
さらに高い移動度を得られるという報告もある（例えば
１９９２年応用物理学会予講集ｐ６６９）。エキシマレ
ーザはそのレーザ光波長としてＸｅＣｌ（波長３０８ｎ
ｍ）、ＫｒＦ（波長２４７ｎｍ）、ＡｒＦ（波長１９３
ｎｍ）があるが、シリコン膜の光吸収効率や、レーザ装
置のパワー、寿命、安定性等の点で３０８ｎｍがもっと
も多く用いられている。透明絶縁膜としては石英基板あ
るいは６００℃以上の耐熱性を持つ無アルカリガラス基
板（例えばコーニング社製７０４９、ＨＯＹＡ社製ＮＡ
４０、ＮＡ３５、日本電気硝子社製ＯＡ−２等）が用い
られている。Further, as shown in FIG. 5, the silicon oxide film 2
There is also a report that higher mobility can be obtained by simultaneously irradiating 01 with laser from the back surface of the substrate (for example, p. 669, Preparatory Lecture of Japan Society of Applied Physics, 1992). The excimer laser uses XeCl (wavelength 308n as its laser light wavelength.
m), KrF (wavelength 247 nm), ArF (wavelength 193)
However, 308 nm is most often used in terms of the light absorption efficiency of the silicon film, the power, life and stability of the laser device. As the transparent insulating film, a quartz substrate or a non-alkali glass substrate having a heat resistance of 600 ° C. or higher (eg, Corning 7049, HOYA NA
40, NA35, OA-2 manufactured by Nippon Electric Glass Co., Ltd.) is used.
【０００５】[0005]
【発明が解決しようとする課題】しかし通常用いられて
いる透明絶縁性基板では石英基板を除いて波長３００ｎ
ｍ付近で光透過率が急激に減少する。これより短い波長
の光は全く透過しない。このため石英以外の低コストガ
ラス基板上でエキシマレーザアニールを行った場合、次
に掲げる問題点がある。However, in a commonly used transparent insulating substrate, a wavelength of 300 n is excluded except for a quartz substrate.
The light transmittance sharply decreases near m. Light of wavelength shorter than this is not transmitted at all. Therefore, when excimer laser annealing is performed on a low-cost glass substrate other than quartz, there are the following problems.
【０００６】１）シリコン膜を通過したレーザ光がガラ
ス基板で吸収され、ガラスに熱ダメージを発生させてい
る。1) The laser light that has passed through the silicon film is absorbed by the glass substrate, causing thermal damage to the glass.
【０００７】２）基板が加熱されることによりシリコン
薄膜のアニール状態が変動して薄膜の結晶性がばらつ
き、この結果ＴＦＴ特性のばらつきが大きくなる。2) As the substrate is heated, the annealing state of the silicon thin film changes, and the crystallinity of the thin film varies, resulting in a large variation in the TFT characteristics.
【０００８】３）基板加熱によりガラス基板より不純物
が拡散し特性が劣化する。3) By heating the substrate, impurities are diffused from the glass substrate and the characteristics are deteriorated.
【０００９】４）基板両面よりのレーザアニールという
手法もガラス基板をレーザが透過しないため従来のガラ
ス基板では不可能である。4) The method of laser annealing from both sides of the substrate is also impossible with the conventional glass substrate because the laser does not pass through the glass substrate.
【００１０】石英基板を用いれば、波長３００ｎｍ付近
の透過率は高いためこれらの問題点は解決するが、基板
コストが非常に高くなるという大きな問題点がある。If a quartz substrate is used, these problems can be solved because the transmittance around the wavelength of 300 nm is high, but there is a big problem that the substrate cost becomes very high.
【００１１】[0011]
【課題を解決するための手段】本発明の要旨とするとこ
ろは第１にＳｉＯ2 を主成分とし、Ａｌ2 Ｏ3 、Ｂ2Ｏ
3 、ＢａＯ、ＣａＯ、ＺｎＯ、ＳｒＯのうち少なくとも
１種以上の成分を５ｗｔ％以上含みＮａ2 Ｏ、Ｋ2 Ｏ、
Ｌｉ2 Ｏの成分が０．１ｗｔ％以下である透明絶縁性基
板においてＦｅ3+イオンが０．００５％以下であること
を特徴とする透明絶縁性基板を提供するところにある。
第２に透明絶縁性基板上に設けられた、多結晶薄膜半導
体活性層と、低抵抗ソース・ドレイン電極層と、半導体
を覆うように形成されるゲート絶縁膜層、電極メタル層
より構成される薄膜半導体装置において、前記透明性絶
縁基板が請求項１記載の透明絶縁性基板であること、お
よび前記多結晶半導体活性層薄膜が紫外パルスレーザ光
照射により結晶化された薄膜であることを特徴とする薄
膜トランジスタを提供するところにある。The gist of the present invention is, firstly, that SiO 2 is the main component, and Al 2 O 3 and B 2 O.
3 , BaO, CaO, ZnO, SrO containing 5 wt% or more of at least one component of Na 2 O, K 2 O,
An object of the present invention is to provide a transparent insulating substrate having a Li 2 O content of 0.1 wt% or less and Fe 3+ ions of 0.005% or less.
Secondly, it is composed of a polycrystalline thin film semiconductor active layer provided on a transparent insulating substrate, a low resistance source / drain electrode layer, a gate insulating film layer formed so as to cover the semiconductor, and an electrode metal layer. In the thin film semiconductor device, the transparent insulating substrate is the transparent insulating substrate according to claim 1, and the polycrystalline semiconductor active layer thin film is a thin film crystallized by irradiation with an ultraviolet pulse laser beam. The present invention provides a thin film transistor that
【００１２】[0012]
【実施例】以下添付の図面により本発明の詳細を説明す
る。図１はガラスの他の成分を同一にしてＦｅ3+イオン
濃度のみを変えて光透過特性を測定したものである。こ
れから判るようにＦｅ3+イオンを０．００５％以下にす
ると３００ｎｍ付近の透過率を９０％以上確保できた。
従来のガラス基板では波長３００ｎｍ付近で光透過率が
大きく減少しているのに対して、本発明のガラス基板で
は９０％以上の光透過性を示しているのがわかる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The details of the present invention will be described below with reference to the accompanying drawings. FIG. 1 shows the results of measuring the light transmission characteristics by making the other components of the glass the same and changing only the Fe 3+ ion concentration. As can be seen from this, when the Fe 3+ ion content is 0.005% or less, the transmittance in the vicinity of 300 nm is 90% or more.
It can be seen that the conventional glass substrate has a large decrease in the light transmittance around the wavelength of 300 nm, whereas the glass substrate of the present invention exhibits a light transmittance of 90% or more.
【００１３】ガラスの紫外線吸収は、ガラスの基本組成
とガラスに不純物として含まれるＦｅやＴｉなどの紫外
線吸収イオンの量に比例する。ガラスの基本組成はガラ
構造の骨格をなすガラス形成物（ＳｉＯ2 やＢ2 Ｏ3 ）
と骨格を切断しその間に入る修飾酸化物（アルカリ土類
金属酸化物など）からなる。ガラス形成酸化物の吸収端
はＳｉＯ2 １６２ｎｍ Ｂ2 Ｏ3 ２００ｎｍであるた
め、３００ｎｍ付近の光吸収には影響を及ぼさない。し
かし修飾酸化物が入るとガラス骨格を切断することによ
り非架橋酸素イオンが生じこの非架橋イオンの電子が励
起または解放する事によって紫外線が吸収される。した
がって修飾酸化物を含むガラスの紫外線吸収端は長波長
側にシフトする。この結果３００ｎｍでの光吸収に差が
生じてくる。The ultraviolet absorption of glass is proportional to the basic composition of glass and the amount of ultraviolet absorbing ions such as Fe and Ti contained in the glass as impurities. The basic composition of glass is a glass-forming material (SiO 2 or B 2 O 3 ) that forms the framework of a glass structure.
And a modified oxide (such as alkaline earth metal oxide) that cuts the skeleton and enters between them. Since the absorption edge of the glass-forming oxide is SiO 2 162 nm B 2 O 3 200 nm, it does not affect the light absorption near 300 nm. However, when the modified oxide enters, non-bridging oxygen ions are generated by cutting the glass skeleton, and electrons of the non-bridging ions are excited or released to absorb ultraviolet rays. Therefore, the ultraviolet absorption edge of the glass containing the modified oxide shifts to the long wavelength side. As a result, a difference occurs in light absorption at 300 nm.
【００１４】３００ｎｍでの吸収に大きな影響があるの
はガラスの不純物イオン特にＦｅ3+である。一般のソー
ダガラスには約０．１％のＦｅ2 Ｏ3 が含まれていて紫
外線はほとんどガラスに吸収されてしまう。鉄の不純物
でもＦｅ2+は赤外域に吸収があり、紫外域には吸収が無
い。It is the impurity ions of the glass, especially Fe 3+, that have a large effect on the absorption at 300 nm. Common soda glass contains about 0.1% Fe 2 O 3, and ultraviolet rays are almost absorbed by the glass. Even with iron impurities, Fe 2+ has absorption in the infrared region and has no absorption in the ultraviolet region.
【００１５】通常この用途に使用されるガラス基板（無
アルカリガラス、耐熱温度６００℃以上）は石英をのぞ
きＦｅ3+イオンを少なくとも０．０２％以上含んでい
る。このようなガラス基板の光透過特性は図１に示すよ
うに３００ｎｍで急激に透過率が低下する。The glass substrate (alkali-free glass, heat resistant temperature of 600 ° C. or higher) usually used for this purpose contains at least 0.02% or more of Fe 3+ ions except for quartz. With respect to the light transmission characteristics of such a glass substrate, the transmittance sharply decreases at 300 nm as shown in FIG.
【００１６】そのほかの紫外線吸収イオンとしてはＴ
ｉ、Ｃｅ、Ｖ、Ｐｂ等がある。Ｔｉが約数１０ｐｐｍの
オーダ含まれているが、その他の不純物イオンは検出限
界以下しか含まれておらず、この程度の量では３００ｎ
ｍの吸収には影響を及ぼさない。このためＦｅイオンの
低減に限ってガラス基板の製造方法の改善を行えばよ
く、ガラスの性質、製造コストの大幅な変化なしに３０
０ｎｍ付近の光透過率の改善が可能である。Other ultraviolet absorbing ions are T
i, Ce, V, Pb, etc. Although Ti is contained in the order of several tens of ppm, other impurity ions are contained only below the detection limit.
It does not affect the absorption of m. Therefore, it is sufficient to improve the manufacturing method of the glass substrate only for the reduction of Fe ions.
It is possible to improve the light transmittance near 0 nm.
【００１７】図１に示すように本発明のガラス基板では
Ｆｅ3+イオンのみ低減させ０．００５％以下にすること
によりは石英基板に比較してはるかに製造コストを十分
低く保ちながら、３００ｎｍ付近の光透過性の改善され
た基板を製造できた。このガラス基板に直接３０８ｎｍ
のエキシマレーザ光を照射しても基板にダメージは生じ
なかった。As shown in FIG. 1, in the glass substrate of the present invention, by reducing only Fe 3+ ions to 0.005% or less, the manufacturing cost can be kept sufficiently lower than that of the quartz substrate, while the vicinity of 300 nm can be achieved. It was possible to manufacture a substrate having an improved light transmittance. 308nm directly on this glass substrate
The substrate was not damaged even when the excimer laser light was irradiated.
【００１８】前述したように通常の無アルカリガラスで
は波長３００ｎｍ付近で透過率は２０％しかない。この
ため、基板裏面よりの光照射は当然無理であり、表面か
らの照射においてもｐｏｌｙ−Ｓｉ膜厚は薄くなるとと
もに透過した光によって基板が加熱され問題となる。特
に薄膜トランジスタの高性能化のためのシリコン膜厚は
薄膜化の傾向にある。シリコン膜を薄膜化していくにつ
れ通過した光がガラスに吸収され基板が加熱される。こ
のためシリコン膜の熱加熱状態が変動し、再結晶化プロ
セスにばらつきが生じ、ＴＦＴ特性がばらついてしま
う。基板の光透過率が９０％以上あれば、レーザ照射時
に基板に光吸収によって加熱される効果は無視でき、安
定した再結晶化プロセスが得られる。As described above, the normal non-alkali glass has a transmittance of only 20% around a wavelength of 300 nm. For this reason, it is naturally impossible to irradiate the light from the back surface of the substrate, and even in the irradiation from the front surface, the film thickness of the poly-Si becomes thin and the substrate is heated by the transmitted light, which causes a problem. In particular, the silicon film thickness for improving the performance of thin film transistors tends to decrease. As the silicon film becomes thinner, the light passing through is absorbed by the glass and the substrate is heated. For this reason, the state of heat-heating of the silicon film fluctuates, the recrystallization process fluctuates, and the TFT characteristics fluctuate. If the light transmittance of the substrate is 90% or more, the effect of heating the substrate by light absorption during laser irradiation can be ignored, and a stable recrystallization process can be obtained.
【００１９】図２は本発明のトランジスタの製造方法及
び構造図である。本発明のガラス基板１０１上に活性層
となる多結晶シリコン薄膜２０２を作製する。この多結
晶シリコン膜は予め作製した非晶質、もしくは多結晶シ
リコン膜２０１をエキシマレーザ光３０１を照射するこ
とより結晶化したシリコン膜である（同図（Ｂ））、こ
の上部にゲート絶縁膜４０１、ゲート電極５０１、層間
絶縁膜６０１、ソース・ドレイン電極層７０１を設け構
成されている。本発明の薄膜トランジスタの作製方法で
はガラス基板の３００ｎｍ付近の光透過性が高くレーザ
照射による基板加熱がなく、均一性の優れる薄膜トラン
ジスタが作製できた。FIG. 2 is a diagram showing the manufacturing method and structure of the transistor of the present invention. A polycrystalline silicon thin film 202 to be an active layer is formed on the glass substrate 101 of the present invention. The polycrystalline silicon film is a silicon film which is formed in advance by crystallizing the amorphous or polycrystalline silicon film 201 by irradiating the excimer laser beam 301 (FIG. 2B). 401, a gate electrode 501, an interlayer insulating film 601, and a source / drain electrode layer 701 are provided. According to the method of manufacturing a thin film transistor of the present invention, a thin film transistor having a glass substrate having a high light transmittance in the vicinity of 300 nm and having no substrate heating due to laser irradiation and having excellent uniformity could be manufactured.
【００２０】前述したように通常の無アルカリガラスで
は波長３００ｎｍ付近で透過率は２０％しかない。この
ため、基板裏面よりの光照射は当然無理であり、表面か
らの照射においてもｐｏｌｙ−Ｓｉ膜厚は薄くなるとと
もに透過した光によって基板が加熱され問題となる。特
に薄膜トランジスタの高性能化のためシリコン膜厚は薄
膜化の傾向にある。シリコン膜を薄膜化していくにつれ
通過した光がガラスに吸収され基板が加熱される。この
ためシリコン膜の熱加熱状態が変動し、再結晶化プロセ
スにばらつきが生じ、ＴＦＴ特性がばらついてしまう。
基板の光透過率が９０％以上あれば、レーザ照射時に基
板が光吸収によって加熱される効果は無視でき、安定し
た再結晶化プロセスが得られる。As mentioned above, the normal non-alkali glass has a transmittance of only 20% around a wavelength of 300 nm. For this reason, it is naturally impossible to irradiate the light from the back surface of the substrate, and even in the irradiation from the front surface, the film thickness of the poly-Si becomes thin and the substrate is heated by the transmitted light, which causes a problem. In particular, the silicon film thickness tends to be reduced in order to improve the performance of thin film transistors. As the silicon film becomes thinner, the light passing through is absorbed by the glass and the substrate is heated. For this reason, the state of heat-heating of the silicon film fluctuates, the recrystallization process fluctuates, and the TFT characteristics fluctuate.
If the light transmittance of the substrate is 90% or more, the effect of heating the substrate by light absorption during laser irradiation can be ignored, and a stable recrystallization process can be obtained.
【００２１】なお本法は通常のプレーナ構造の薄膜トラ
ンジスタについて詳述したが、スタガ構造等、他の構造
のトランジスタについても同様の効果が期待できる。図
３はスタガ構造薄膜トランジスタを作製した場合の構造
図である。本発明のガラス基板１０１上にソース・ドレ
イン領域となるドープトシリコン層８０１を形成する。
この上部に活性層となるシリコン薄膜２０１を作製しエ
キシマレーザ光３０１照射により多結晶化膜２０２にす
る。この上部にゲート絶縁膜４０１、ゲート電極５０
１、層間絶縁膜６０１、ソース・ドレイン電極層７０１
を設け構成されている。この構造の薄膜トランジスタに
おいてもレーザ照射による基板加熱がなく、均一性の優
れる薄膜トランジスタが作製できた。Although the present method has been described in detail for a thin film transistor having a normal planar structure, the same effect can be expected for a transistor having another structure such as a stagger structure. FIG. 3 is a structural diagram when a staggered thin film transistor is manufactured. A doped silicon layer 801 to be source / drain regions is formed on the glass substrate 101 of the present invention.
A silicon thin film 201 to be an active layer is formed on this and a polycrystallized film 202 is formed by irradiation with excimer laser light 301. A gate insulating film 401 and a gate electrode 50 are formed on top of this.
1, interlayer insulating film 601, source / drain electrode layer 701
Is provided and configured. Also in the thin film transistor having this structure, the substrate was not heated by laser irradiation, and a thin film transistor having excellent uniformity could be manufactured.
【００２２】また図５は基板両面よりのレーザ照射によ
る結晶化プロセスをもちいた場合である。前述したよう
に通常の無アルカリガラスでは光透過率は２０％しかな
いため、基板裏面よりの光照射は当然無理である。しか
し本発明のガラス基板を用いる事によって基板両面より
のレーザ照射が可能となり素子性能の向上がえられた。Further, FIG. 5 shows a case where a crystallization process by laser irradiation from both surfaces of the substrate is used. As described above, since the light transmittance is only 20% in normal non-alkali glass, it is naturally impossible to irradiate light from the back surface of the substrate. However, by using the glass substrate of the present invention, laser irradiation from both sides of the substrate was possible, and the device performance was improved.
【００２３】[0023]
【発明の効果】以上詳述したように、本発明による透明
絶縁性基板により波長３００ｎｍ付近での光透過性を高
めることができた。さらに本基板を用いた薄膜トランジ
スタによりレーザ照射時の基板へのダメージや、結晶化
プロセスのばらつきを抑えることができ均一性の優れた
薄膜トランジスタが再現性よく製作できた。As described above in detail, the transparent insulating substrate according to the present invention can enhance the light transmittance in the wavelength region of about 300 nm. Furthermore, the thin film transistor using this substrate can suppress damage to the substrate during laser irradiation and variations in the crystallization process, and a thin film transistor with excellent uniformity can be manufactured with good reproducibility.
【図１】従来及び本発明の絶縁性基板の光透過性を示す
図。FIG. 1 is a diagram showing the light transmittance of an insulating substrate according to the related art and the present invention.
【図２】本発明の実施例を示す薄膜トランジスタ構造、
製造方法を示す図である。FIG. 2 is a thin film transistor structure showing an embodiment of the present invention,
It is a figure which shows a manufacturing method.
【図３】本発明の実施例を示す薄膜トランジスタ構造、
製造方法を示す図である。（スガタ構造の場合）FIG. 3 is a thin film transistor structure showing an embodiment of the present invention,
It is a figure which shows a manufacturing method. (In the case of a Sugata structure)
【図４】従来の薄膜トランジスタ構造、製造方法を示す
図FIG. 4 is a diagram showing a conventional thin film transistor structure and a manufacturing method.
【図５】本発明の実施例を示す薄膜トランジスタ構造、
製造方法を示す図である。（両面アニール方法の実施
例）FIG. 5 is a thin film transistor structure showing an embodiment of the present invention,
It is a figure which shows a manufacturing method. (Example of double-sided annealing method)
１０１ ガラス基板（本発明のガラス基板：３００〜８
００ｎｍで光透過性である基板） １０２ ガラス基板（従来基板） ２０１ シリコン薄膜 ２０２ 多結晶シリコン薄膜（基板表面よりレーザ照射
結晶化） ２０３ 多結晶シリコン膜（基板両面よりレーザ照射結
晶化） ３０１ エキシマレーザ光 ４０１ ゲート絶縁膜 ５０１ ゲート電極層 ６０１ 層間絶縁膜層 ７０１ 電極層 ８０１ ソース・ドレイン層101 glass substrate (glass substrate of the present invention: 300 to 8)
Substrate that is light transmissive at 00 nm 102 Glass substrate (conventional substrate) 201 Silicon thin film 202 Polycrystalline silicon thin film (laser irradiation crystallization from substrate surface) 203 Polycrystalline silicon film (laser irradiation crystallization from both sides of substrate) 301 Excimer laser Light 401 Gate insulating film 501 Gate electrode layer 601 Interlayer insulating film layer 701 Electrode layer 801 Source / drain layer
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 27/12 Ｒ 21/336 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical indication H01L 27/12 R 21/336
Claims (2)
2 Ｏ3 、ＢａＯ、ＣａＯ、ＺｎＯ、ＳｒＯのうち少なく
とも１種以上の成分を５ｗｔ％以上含みＮａ2 Ｏ、Ｋ2
Ｏ、Ｌｉ2 Ｏの成分が０．１ｗｔ％以下である透明絶縁
性基板において、Ｆｅ3+イオンが０．００５％以下であ
ることを特徴とする透明絶縁性基板。1. Al 2 O 3 , B containing SiO 2 as a main component
2 O 3 , BaO, CaO, ZnO, SrO containing 5 wt% or more of at least one component Na 2 O, K 2
A transparent insulating substrate containing 0.1% by weight or less of O and Li 2 O, and 0.005% or less of Fe 3+ ions in the transparent insulating substrate.
薄膜半導体活性層と、低抵抗ソース・ドレイン電極層
と、半導体を覆うように形成されるゲート絶縁膜層、電
極メタル層より構成される薄膜トランジスタにおいて、
前記透明性絶縁基板が請求項１記載の透明絶縁性基板で
あること、および前記多結晶半導体活性層薄膜が紫外パ
ルスレーザ光照射により結晶化された薄膜であることを
特徴とする薄膜トランジスタ。2. A polycrystalline thin film semiconductor active layer provided on a transparent insulating substrate, a low resistance source / drain electrode layer, a gate insulating film layer formed so as to cover the semiconductor, and an electrode metal layer. In the thin film transistor to be
A thin film transistor, wherein the transparent insulating substrate is the transparent insulating substrate according to claim 1, and the polycrystalline semiconductor active layer thin film is a thin film crystallized by irradiation with an ultraviolet pulse laser beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33399593A JP2674496B2 (en) | 1993-12-28 | 1993-12-28 | Transparent insulating substrate and thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33399593A JP2674496B2 (en) | 1993-12-28 | 1993-12-28 | Transparent insulating substrate and thin film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07202208A true JPH07202208A (en) | 1995-08-04 |
| JP2674496B2 JP2674496B2 (en) | 1997-11-12 |
Family
ID=18272320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33399593A Expired - Lifetime JP2674496B2 (en) | 1993-12-28 | 1993-12-28 | Transparent insulating substrate and thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2674496B2 (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09194229A (en) * | 1995-11-14 | 1997-07-29 | Nippon Sheet Glass Co Ltd | Glass substrate for magnetic disk |
| US7189992B2 (en) * | 2002-05-21 | 2007-03-13 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures having a transparent channel |
| US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
| WO2008063459A1 (en) | 2006-11-13 | 2008-05-29 | Corning Incorporated | Alkali-free glasses containing iron and tin as fining agents |
| CN100428417C (en) * | 2002-09-27 | 2008-10-22 | 上海华虹（集团）有限公司 | High dielectric grid medium Al2O3/BaO/Al2O3 structure and preparing method thereof |
| JP2009091244A (en) * | 2009-01-06 | 2009-04-30 | Asahi Glass Co Ltd | Method for fining alkali-free glass |
| JP2010047477A (en) * | 2009-12-01 | 2010-03-04 | Asahi Glass Co Ltd | Method for clarifying alkali-free glass |
| JP2012231161A (en) * | 2003-02-18 | 2012-11-22 | Corning Inc | Glass-based soi structure |
| CN105576036A (en) * | 2016-01-04 | 2016-05-11 | 京东方科技集团股份有限公司 | Thin film transistor, pixel structure, preparation methods, array substrate and display device |
| JPWO2016194780A1 (en) * | 2015-05-29 | 2018-03-15 | 旭硝子株式会社 | UV transmitting glass |
| JPWO2017057375A1 (en) * | 2015-09-30 | 2018-07-19 | 旭硝子株式会社 | UV transmitting glass |
-
1993
- 1993-12-28 JP JP33399593A patent/JP2674496B2/en not_active Expired - Lifetime
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09194229A (en) * | 1995-11-14 | 1997-07-29 | Nippon Sheet Glass Co Ltd | Glass substrate for magnetic disk |
| US7888207B2 (en) | 2002-05-21 | 2011-02-15 | State of Oregon Acting by and through the Oregon State Board of Higher Eduacation on behalf of Oregon State University | Transistor structures and methods for making the same |
| US7189992B2 (en) * | 2002-05-21 | 2007-03-13 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures having a transparent channel |
| US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
| CN100428417C (en) * | 2002-09-27 | 2008-10-22 | 上海华虹（集团）有限公司 | High dielectric grid medium Al2O3/BaO/Al2O3 structure and preparing method thereof |
| JP2012231161A (en) * | 2003-02-18 | 2012-11-22 | Corning Inc | Glass-based soi structure |
| US7534734B2 (en) | 2006-11-13 | 2009-05-19 | Corning Incorporated | Alkali-free glasses containing iron and tin as fining agents |
| US7696113B2 (en) | 2006-11-13 | 2010-04-13 | Corning Incorporated | Method of manufacturing alkali-free glasses containing iron and tin as fining agents |
| US7935649B2 (en) | 2006-11-13 | 2011-05-03 | Corning Incorporated | Alkali-free glasses containing iron and tin as fining agents |
| EP2484645A2 (en) | 2006-11-13 | 2012-08-08 | Corning Incorporated | Alkali-free glasses containing iron and tin as fining agents |
| WO2008063459A1 (en) | 2006-11-13 | 2008-05-29 | Corning Incorporated | Alkali-free glasses containing iron and tin as fining agents |
| JP2009091244A (en) * | 2009-01-06 | 2009-04-30 | Asahi Glass Co Ltd | Method for fining alkali-free glass |
| JP2010047477A (en) * | 2009-12-01 | 2010-03-04 | Asahi Glass Co Ltd | Method for clarifying alkali-free glass |
| JPWO2016194780A1 (en) * | 2015-05-29 | 2018-03-15 | 旭硝子株式会社 | UV transmitting glass |
| US10689288B2 (en) | 2015-05-29 | 2020-06-23 | AGC Inc. | Ultraviolet transmitting glass |
| JPWO2017057375A1 (en) * | 2015-09-30 | 2018-07-19 | 旭硝子株式会社 | UV transmitting glass |
| CN105576036A (en) * | 2016-01-04 | 2016-05-11 | 京东方科技集团股份有限公司 | Thin film transistor, pixel structure, preparation methods, array substrate and display device |
| CN105576036B (en) * | 2016-01-04 | 2019-01-22 | 京东方科技集团股份有限公司 | Thin film transistor (TFT) and dot structure and preparation method, array substrate, display device |
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| JP2674496B2 (en) | 1997-11-12 |
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