CN100428417C - High dielectric grid medium Al2O3/BaO/Al2O3 structure and preparing method thereof - Google Patents
High dielectric grid medium Al2O3/BaO/Al2O3 structure and preparing method thereof Download PDFInfo
- Publication number
- CN100428417C CN100428417C CNB021371997A CN02137199A CN100428417C CN 100428417 C CN100428417 C CN 100428417C CN B021371997 A CNB021371997 A CN B021371997A CN 02137199 A CN02137199 A CN 02137199A CN 100428417 C CN100428417 C CN 100428417C
- Authority
- CN
- China
- Prior art keywords
- high dielectric
- grid
- bao
- al2o3
- medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB021371997A CN100428417C (en) | 2002-09-27 | 2002-09-27 | High dielectric grid medium Al2O3/BaO/Al2O3 structure and preparing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB021371997A CN100428417C (en) | 2002-09-27 | 2002-09-27 | High dielectric grid medium Al2O3/BaO/Al2O3 structure and preparing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1420528A CN1420528A (en) | 2003-05-28 |
CN100428417C true CN100428417C (en) | 2008-10-22 |
Family
ID=4748917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021371997A Expired - Fee Related CN100428417C (en) | 2002-09-27 | 2002-09-27 | High dielectric grid medium Al2O3/BaO/Al2O3 structure and preparing method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100428417C (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101752237B (en) | 2008-12-16 | 2012-08-08 | 国际商业机器公司 | Formation of high-K gate stacks in semiconductor devices |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07202208A (en) * | 1993-12-28 | 1995-08-04 | Nec Corp | Transparent insulating substrate and thin film transistor |
-
2002
- 2002-09-27 CN CNB021371997A patent/CN100428417C/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07202208A (en) * | 1993-12-28 | 1995-08-04 | Nec Corp | Transparent insulating substrate and thin film transistor |
Also Published As
Publication number | Publication date |
---|---|
CN1420528A (en) | 2003-05-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Wilk et al. | High-κ gate dielectrics: Current status and materials properties considerations | |
TWI248208B (en) | High-K gate dielectric stack with buffer layer to improve threshold voltage characteristics | |
CN102222687B (en) | Germanium-based NMOS (N-metal-oxide-semiconductor) device and preparation method thereof | |
TW201637172A (en) | Memory structure | |
JP2001077111A (en) | Transistor structure of zirconium dielectric film doped with aluminum and its deposition method | |
TW200427055A (en) | Transistor devices, CMOS constructions, capacitor constructions, and methods of forming transistor devices and capacitor constructions | |
CN101425457A (en) | High dielectric constant grid dielectric material forming method and a semiconductor device | |
Xu et al. | Ferroelectric HfZrOx-based MoS2 negative capacitance transistor with ITO capping layers for steep-slope device application | |
CN101681872B (en) | Charge reservoir structure | |
Chin et al. | Stack gate PZT/Al 2 O 3 one transistor ferroelectric memory | |
CN1189923C (en) | Structure of grid medium with high dielectric and its preparation method | |
JP2004241725A (en) | Semiconductor device and its manufacturing method | |
Kar | Extraction of the capacitance of ultrathin high-K gate dielectrics | |
TW200403854A (en) | Semiconductor integrated circuit device and its manufacturing method | |
Ng et al. | Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing | |
CN1319128C (en) | High dielectric grid laminating structure | |
Yang et al. | Improving the electrical characteristics of MOS transistors with CeO2/La2O3 stacked gate dielectric | |
CN100428417C (en) | High dielectric grid medium Al2O3/BaO/Al2O3 structure and preparing method thereof | |
CN1450656A (en) | Grid medium stacking structure | |
CN101217112A (en) | A preparation method of nanometer scale W/TiN compound refractory metal bar | |
Lee et al. | Impact of metal gate electrodes on electrical properties of Y2O3/Si0. 78Ge0. 22 gate stacks | |
Iwai et al. | High dielectric constant materials for nanoscale devices and beyond | |
JP4489104B2 (en) | Manufacturing method of semiconductor device | |
TW200525688A (en) | Method for producing dielectric layer of high-k gate in MOST | |
CN109817585A (en) | Metal oxide semiconductor device and method for manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG (GROUP) CO., LTD.; APPLICANT Free format text: FORMER OWNER: SHANGHAI HUAHONG (GROUP) CO., LTD. Effective date: 20061020 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20061020 Address after: 201203 No. 177 blue wave road, Zhangjiang hi tech park, Shanghai, Pudong New Area Applicant after: Shanghai Huahong (Group) Co., Ltd. Co-applicant after: Shanghai integrated circuit research and Development Center Co., Ltd. Address before: 18, Huaihai Road, Shanghai, No. 200020, building 918 Applicant before: Shanghai Huahong (Group) Co., Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081022 Termination date: 20140927 |
|
EXPY | Termination of patent right or utility model |