JPH07201225A - Dielectric porcelain composite - Google Patents

Dielectric porcelain composite

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Publication number
JPH07201225A
JPH07201225A JP5335844A JP33584493A JPH07201225A JP H07201225 A JPH07201225 A JP H07201225A JP 5335844 A JP5335844 A JP 5335844A JP 33584493 A JP33584493 A JP 33584493A JP H07201225 A JPH07201225 A JP H07201225A
Authority
JP
Japan
Prior art keywords
dielectric
mol
dielectric ceramic
capacitance
ceramic composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5335844A
Other languages
Japanese (ja)
Inventor
Kaori Shiraishi
香織 白石
Shoji Yoro
昭二 養老
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5335844A priority Critical patent/JPH07201225A/en
Publication of JPH07201225A publication Critical patent/JPH07201225A/en
Pending legal-status Critical Current

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  • Ceramic Capacitors (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

PURPOSE:To provide a dielectric porcelain composite having excellent anti-fold resistance and dielectric strength, and reduced dependency of electrostatic capacity temperature characteristics on the baking temperature. CONSTITUTION:A composite is expressed by (SrxCayBaz)TiO3, where 55<=x<=0.85, 0.45<=y<=0.15. and 0<=z<=5.0 at a mole ratio of x+y+z=1. As additives, Bi2O3 by 0.5-8.0mol% and MgO by 0.5-2.0mol% are added.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は温度補償用の誘電体磁器
組成物に関するものであり、例えば円板コンデンサやト
リマコンデンサに用いる誘電体磁器組成物に関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric ceramic composition for temperature compensation, and more particularly to a dielectric ceramic composition used for disk capacitors and trimmer capacitors.

【0002】[0002]

【従来の技術】トリマコンデンサは、片面に電極を施し
た誘電体素子(ステータ)とその対極としての金属ロー
タとの接触面積を変化させることによって、静電容量を
任意に調節できる可変コンデンサである。しかし、接触
面積はドライバーにより調整ピンを回転させることによ
り変化させるため誘電体素子(ステータ)にかなりのス
トレスがかかってくる。また技術動向として、今後益々
トリマコンデンサの低背化が進み誘電体素子(ステー
タ)の薄型化が要求されることになる。
2. Description of the Related Art A trimmer capacitor is a variable capacitor whose capacitance can be arbitrarily adjusted by changing the contact area between a dielectric element (stator) having an electrode on one surface and a metal rotor as its counter electrode. . However, since the contact area is changed by rotating the adjusting pin with a driver, a considerable stress is applied to the dielectric element (stator). Further, as a technological trend, the height of the trimmer capacitor will be further reduced in the future, and it will be required to make the dielectric element (stator) thinner.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、(Sr
CaBa)TiO3、Bi23系の組成だけでは誘電体
素子(ステータ)の曲げ強度が弱く、厚みを薄くすると
容量の調節中に割れてしまうという課題があった。ま
た、誘電体素子を薄くすることにより、絶縁耐圧の低下
も起こるようになった。
However, (Sr
There is a problem that the dielectric strength of the dielectric element (stator) is weak only with the composition of the CaBa) TiO 3 and Bi 2 O 3 system, and the dielectric element (stator) cracks during the capacity adjustment when the thickness is reduced. Further, the dielectric breakdown voltage is also reduced by making the dielectric element thinner.

【0004】さらに厚みとは別に(SrxCayBaz
TiO3、Bi23は静電容量温度特性の焼成温度依存
性が著しいという課題もあった。
In addition to the thickness (Sr x Ca y Ba z )
TiO 3 and Bi 2 O 3 also have a problem that the firing temperature dependency of the capacitance temperature characteristic is remarkable.

【0005】本発明は以上のような従来の欠点を除去
し、抗折強度の向上、絶縁耐圧の向上、静電容量温度特
性の焼成温度依存性を緩和した誘電体磁器組成物を提供
することを目的とする。
The present invention eliminates the above-mentioned conventional drawbacks and provides a dielectric ceramic composition in which the bending strength is improved, the dielectric strength is improved, and the firing temperature dependence of the capacitance temperature characteristic is relaxed. With the goal.

【0006】[0006]

【課題を解決するための手段】これらの課題を解決する
ために本発明では、一般式として(SrxCayBaz
TiO3で表され、かつx,yおよびzはモル比を表
し、x+y+z=1でx,y,zの値が0.55≦x≦
0.85、0.45≦y≦0.15、0≦z≦0.5で
あり、添加剤としてBi23が0.5〜8.0mol%
さらにMgOが0.5〜2.0mol%からなる誘電体
磁器組成物、添加剤としてBi23とNb 25を0.0
2〜0.5mol%からなる誘電体磁器組成物および添
加剤としてBi23とZrO2を0.01〜0.2mo
l%からなる誘電体磁器組成物を提供する。
[Means for Solving the Problems] Solving these problems
Therefore, in the present invention, the general formula (SrxCayBaz)
TiO3And x, y and z represent molar ratios.
Then, when x + y + z = 1, the values of x, y, and z are 0.55 ≦ x ≦
0.85, 0.45 ≦ y ≦ 0.15, 0 ≦ z ≦ 0.5
Yes, Bi as an additive2O3Is 0.5-8.0 mol%
Furthermore, a dielectric material containing 0.5 to 2.0 mol% of MgO.
Porcelain composition, Bi as an additive2O3And Nb 2OFiveTo 0.0
Dielectric ceramic composition comprising 2 to 0.5 mol% and additive
Bi as an additive2O3And ZrO20.01-0.2mo
A dielectric ceramic composition comprising 1% is provided.

【0007】[0007]

【作用】一般式として(SrxCayBaz)TiO3で表
され、かつx,yおよびzはモル比を表し、x+y+z
=1でx,y,zの値が0.55≦x≦0.85、0.
45≦y≦0.15、0≦z≦0.5であり、添加剤と
してBi23が0.5〜8.0mol%の誘電体磁器組
成物にさらにMgOを0.5〜2.0mol%添加する
ことにより、結晶粒径が均一に且つ小さくなり抗折強度
が向上するものである。またNb25を添加することに
より絶縁耐圧が20(kv/mm)から30(kv/mm)
にすることができる。そしてZrO2を添加することに
より、静電容量温度特性の焼成温度依存性を緩和するこ
とができる。
In the general formula, (Sr x Ca y Ba z ) TiO 3 is represented, and x, y and z are molar ratios, and x + y + z
= 1 and the values of x, y, z are 0.55 ≦ x ≦ 0.85, 0.
45 ≦ y ≦ 0.15, 0 ≦ z ≦ 0.5, and the dielectric ceramic composition containing Bi 2 O 3 as an additive in an amount of 0.5 to 8.0 mol% further contains MgO in an amount of 0.5 to 2. By adding 0 mol%, the crystal grain size becomes uniform and small, and the bending strength is improved. In addition, the dielectric strength is 20 (kv / mm) to 30 (kv / mm) by adding Nb 2 O 5.
Can be Then, by adding ZrO 2 , the firing temperature dependence of the capacitance temperature characteristic can be relaxed.

【0008】[0008]

【実施例】以下、本発明の実施例について説明する。EXAMPLES Examples of the present invention will be described below.

【0009】本発明における誘電体磁器組成物はトリマ
コンデンサなどに用いられる。すなわち、図1に示すよ
うに表面近くの内部に半円状のステータ電極1を内蔵し
た誘電体磁器板2からなるステータ上に、下面に半円状
の凹部3を形成した金属ロータ4を載置し、この金属ロ
ータ4の上面に形成した調整凹部5内にスプリング6を
組込み、このスプリング6の中央の筒状部7を金属ロー
タ4、ステータの中心に貫通させてステータの下面でか
しめてトリマコンデンサを構成している。
The dielectric ceramic composition of the present invention is used for trimmer capacitors and the like. That is, as shown in FIG. 1, a metal rotor 4 having a semi-circular concave portion 3 formed on the lower surface thereof is mounted on a stator composed of a dielectric ceramic plate 2 having a semi-circular stator electrode 1 built-in inside near the surface. Then, the spring 6 is installed in the adjusting recess 5 formed on the upper surface of the metal rotor 4, and the cylindrical portion 7 at the center of the spring 6 is penetrated through the centers of the metal rotor 4 and the stator and caulked on the lower surface of the stator. It constitutes a trimmer capacitor.

【0010】本発明はこのようなトリマコンデンサのス
テータとしての誘電体磁器板2を構成する誘電体磁器組
成物として、抗折強度に優れ、絶縁耐圧に優れ、静電容
量温度特性の焼成依存性を緩和したものを提供するもの
である。
The present invention provides a dielectric ceramic composition that constitutes the dielectric ceramic plate 2 as the stator of such a trimmer capacitor, which has excellent bending strength, excellent dielectric strength, and firing temperature dependence of capacitance. Is provided as a relaxation.

【0011】以下、本発明の誘電体磁器組成物の具体的
実施例を説明する。 (実施例1)出発原料としてSrTiO3、CaTi
3、BaTiO3、Bi23及びMgOを(表1)に示
す組成比になるように秤量し、部分安定化ジルコニアボ
ールを用いて湿式混合後、脱水乾燥を行った。次に11
00℃にて2時間仮焼した。この仮焼粉末を、湿式混合
と同じ条件で湿式粉砕し、脱水乾燥した。この粉砕粉末
に、有機バインダーを加え、均質とした後、32メッシ
ュのふるいを通して整粒し、金型と油圧プレスを用いて
成形圧力1ton/cm2で直径15mm、厚み0.4mmに
成形した。次いで、成形円板をジルコニア粉末を敷いた
アルミナ質のさやに入れ、空気中にて昇降温速度400
℃/h、保持温度1300〜1400℃、保持時間1〜
4h焼成し、(表1)の試料番号1〜30に示す組成比
の誘電体磁器円板を得た。
Specific examples of the dielectric ceramic composition of the present invention will be described below. (Example 1) SrTiO 3 , CaTi as starting materials
O 3 , BaTiO 3 , Bi 2 O 3 and MgO were weighed so as to have the composition ratio shown in (Table 1), wet-mixed with partially stabilized zirconia balls, and dehydrated and dried. Next 11
It was calcined at 00 ° C. for 2 hours. This calcined powder was wet-ground under the same conditions as wet mixing, and dehydrated and dried. An organic binder was added to this pulverized powder to make it homogenous, and then the powder was sized through a 32 mesh sieve and molded with a molding pressure of 1 ton / cm 2 into a diameter of 15 mm and a thickness of 0.4 mm using a die and a hydraulic press. Next, the molded disc is put into an alumina sheath covered with zirconia powder, and the temperature rising / falling rate is 400 in air.
° C / h, holding temperature 1300 to 1400 ° C, holding time 1 to
After firing for 4 hours, dielectric ceramic discs having composition ratios shown in sample numbers 1 to 30 of (Table 1) were obtained.

【0012】このようにして得られた誘電体磁器円板
は、厚みと直径と重量を測定し、誘電率、良好度Q、静
電容量温度係数測定用試料は、誘電体磁器円板の両面全
体に銀電極を焼き付けた。そして、誘電率、良好度Q、
静電容量温度係数は、デジタルLCRメータのモデル4
275A〔横河ヒューレット・パッカード(株)製〕を
使用し、測定温度20℃、測定電圧0.5Vrms、測
定周波数1MHzでの測定より求めた。なお、静電容量温
度係数は、−25℃と85℃の静電容量を測定し、下記
式により求めた。
The thickness, diameter and weight of the thus obtained dielectric porcelain disc were measured, and the samples for measuring the dielectric constant, the goodness Q and the temperature coefficient of capacitance were both sides of the dielectric porcelain disc. A silver electrode was baked on the whole surface. Then, the dielectric constant, the goodness Q,
The temperature coefficient of capacitance is model 4 of the digital LCR meter.
275A (manufactured by Yokogawa Hewlett-Packard Co.) was used, and the measurement temperature was 20 ° C., the measurement voltage was 0.5 Vrms, and the measurement frequency was 1 MHz. The temperature coefficient of capacitance was obtained by measuring the capacitance at -25 ° C and 85 ° C and using the following formula.

【0013】TC=(C−Co)/Co×1/110×
106 TC:静電容量温度係数(ppm/℃) Co:−25℃での静電容量(pF) C :85℃での静電容量(pF) また、誘電率は下記式により求めた。
TC = (C-Co) / Co × 1/110 ×
10 6 TC: Capacitance temperature coefficient (ppm / ° C.) Co: Capacitance at -25 ° C. (pF) C: Capacitance at 85 ° C. (pF) Further, the dielectric constant was calculated by the following formula.

【0014】K=143.8×Co×t/(D/2)2
/π K :誘電率 Co:20℃での静電容量(pF) D :誘電体磁器円板の直径(mm) t :誘電体磁器円板の厚み(mm) 更に、曲げ強度は図2に示すように、JISに従って3
点曲げ強さを測定した。2つの支点8の上に試験片9を
置き、荷重点が一定の曲率半径をもつダイヤルゲージ1
0により試験片9に荷重を加えた。試験片9が破壊した
ときの最大荷重を読み取り下記式により求めた。
K = 143.8 × Co × t / (D / 2) 2
/ Π K: Dielectric constant Co: Capacitance at 20 ° C (pF) D: Diameter of dielectric ceramic disk (mm) t: Thickness of dielectric ceramic disk (mm) Further, bending strength is shown in Fig. 2. As shown, 3 according to JIS
The point bending strength was measured. The test piece 9 is placed on the two fulcrums 8, and the dial gauge 1 in which the load point has a constant radius of curvature
The load was applied to the test piece 9 by 0. The maximum load when the test piece 9 was broken was read and determined by the following formula.

【0015】曲げ強度=3PL/(2wt2) P :試験片が破壊したときの最大荷重(kgf/mm2) L :支点間距離(mm) w :試験片の幅(mm) t :試験片の厚さ(mm) 上記測定結果を試料番号1〜30別に(表1)に示す。Bending strength = 3 PL / (2 wt 2 ) P: Maximum load when the test piece breaks (kgf / mm 2 ) L: Distance between fulcrums (mm) w: Width of test piece (mm) t: Test piece (Mm) The above measurement results are shown in Table 1 for each of sample numbers 1 to 30.

【0016】[0016]

【表1】 [Table 1]

【0017】(表1)でわかるように、SrTiO3
0.55未満だとQの低下がおこり、0.80を越える
と素体が還元されて半導体コンデンサのようになって、
容量が大きくなり、Qが著しく小さくなる。更にマイナ
ス側の温度特性も大きくなってしまう。
As can be seen from (Table 1), when SrTiO 3 is less than 0.55, Q decreases, and when it exceeds 0.80, the element body is reduced to become a semiconductor capacitor.
The capacity becomes large and the Q becomes extremely small. Further, the temperature characteristic on the minus side also becomes large.

【0018】そしてBaTiO3の添加量が0.08を
越えるとQの低下とマイナス側の温度特性が大きくなっ
て実用的でなくなる。
When the added amount of BaTiO 3 exceeds 0.08, the Q is lowered and the temperature characteristic on the negative side is increased, which is not practical.

【0019】次にBi23が0.1mol%未満だと、
焼結せず誘電率やQが低い。また8.0mol%を越え
ると焼結性が悪くなり、Qが低下してくる。更にMgO
が0.5mol%未満だと曲げ強度の改善が見られず、
2.0mol%を越えるとQの低下が見られる。MgO
が曲げ強度を向上させる原因として、MgOを添加する
と粒成長を抑制して均質な結晶粒を形成するためと考え
る。
Next, when Bi 2 O 3 is less than 0.1 mol%,
Dielectric constant and Q are low without sintering. On the other hand, if it exceeds 8.0 mol%, the sinterability will deteriorate and the Q will decrease. Further MgO
Is less than 0.5 mol%, no improvement in bending strength is observed,
When it exceeds 2.0 mol%, a decrease in Q is observed. MgO
It is considered that the reason for improving the bending strength is that the addition of MgO suppresses grain growth and forms homogeneous crystal grains.

【0020】本実施例ではSr、Ca、Baの出発原料
をチタン酸化合物で行ったが酸化物または炭酸化物と酸
化チタンで行っても特性に大きな差は無い。その際、1
000℃〜1200℃で仮焼を行うと、バラツキの小さ
い安定した特性を得ることができる。
In this example, the titanic acid compound was used as the starting material for Sr, Ca, and Ba, but there is no significant difference in characteristics even if the oxide or carbonate and titanium oxide are used. At that time, 1
If calcination is performed at 000 ° C to 1200 ° C, stable characteristics with little variation can be obtained.

【0021】(実施例2)Nb25を(表2)に示す組
成比になるように秤量し、(実施例1)と同じ製造方法
で試料を作成した。
(Example 2) Nb 2 O 5 was weighed so as to have the composition ratio shown in (Table 2), and a sample was prepared by the same manufacturing method as in (Example 1).

【0022】誘電率、良好度Q、静電容量温度特性に関
しては(実施例1)と同じ方法で行った。そして、絶縁
破壊強度は、高電圧電源PHS35K−3形〔菊水電子
工業(株)製〕を使用し、試料をシリコンオイル中に入
れ、昇圧速度50V/secにより求めた絶縁破壊電圧を
誘電体厚みで除算し、1mm当りの絶縁破壊強度とした。
With respect to the dielectric constant, the goodness Q and the temperature characteristic of capacitance, the same method as in (Example 1) was used. For the dielectric breakdown strength, a high voltage power supply PHS35K-3 type (manufactured by Kikusui Electronics Co., Ltd.) was used, the sample was put in silicon oil, and the dielectric breakdown voltage obtained at a step-up speed of 50 V / sec was used as the dielectric thickness. It was divided by to obtain the dielectric breakdown strength per 1 mm.

【0023】上記測定結果を試料番号31〜35別に
(表2)に示す。
The above measurement results are shown in (Table 2) for each of the sample numbers 31 to 35.

【0024】[0024]

【表2】 [Table 2]

【0025】(表2)からもわかるようにNb25を入
れない試料の絶縁耐圧が20(kv/mm)に対して、N
25の添加した試料は絶縁耐圧が向上している。しか
し0.5mol%を越えると静電容量温度特性がマイナ
ス側に大きくなってしまい、実用的でなくなる。
As can be seen from (Table 2), the dielectric strength of the sample without Nb 2 O 5 is 20 (kv / mm),
The sample to which b 2 O 5 is added has improved withstand voltage. However, if it exceeds 0.5 mol%, the capacitance-temperature characteristic becomes large on the negative side, which is not practical.

【0026】(実施例3)ZrO2を(表3)に示す組
成比になるように秤量し、(実施例1)と同じ製造方法
で試料を作成した。電気特性は(実施例1)の測定方法
と同じである。
(Example 3) ZrO 2 was weighed so as to have the composition ratio shown in (Table 3), and a sample was prepared by the same manufacturing method as in (Example 1). The electrical characteristics are the same as in the measuring method of (Example 1).

【0027】上記測定結果を試料番号36〜40別に
(表3)に示す。
The above measurement results are shown in (Table 3) for each of sample numbers 36 to 40.

【0028】[0028]

【表3】 [Table 3]

【0029】(表3)からもわかるようにZrO2を入
れない試料の焼成温度依存性は非常に大きいが0.01
mol%を越えると焼成温度依存性が小さくなってく
る。そして0.2mol%を越えると焼結阻害を起こし
てしまう。
As can be seen from (Table 3), the sample without ZrO 2 has a very large firing temperature dependence, but 0.01
If it exceeds mol%, the firing temperature dependency becomes smaller. If it exceeds 0.2 mol%, sintering inhibition will occur.

【0030】また実施例ではMgOとNb25、ZrO
2を別々に添加しているが、少なくとも2つの元素を同
時に添加してもそれぞれの特徴を損なうことなく効果を
発揮することも確認している。
In the examples, MgO, Nb 2 O 5 and ZrO are used.
Although 2 is added separately, it has been confirmed that even if at least two elements are added at the same time, the effect can be exhibited without impairing the characteristics of each.

【0031】[0031]

【発明の効果】以上の実施例の説明からも明らかなよう
に本発明は、一般式として(SrxCayBaz)TiO3
で表され、かつx,yおよびzはモル比を表し、x+y
+z=1でx,y,zの値が0.55≦x≦0.85、
0.45≦y≦0.15、0≦z≦5.0であり、(S
xCayBaz)TiO3に対して添加剤としてBi23
が0.5〜8.0mol%さらにMgOが0.5〜2.
0mol%からなる曲げ強度の大きい誘電体磁器組成物
を、また添加剤としてBi23とNb25を0.02〜
0.5mol%からなる絶縁耐圧の大きい誘電体磁器組
成物を、そして添加剤としてBi23とZrO2を0.
01〜0.2mol%からなる静電容量焼成温度依存性
の小さい誘電体磁器組成物を提供するものである。
As is apparent from the above description of the embodiments, the present invention has the general formula (Sr x Ca y Ba z ) TiO 3
And x, y and z represent a molar ratio, x + y
+ Z = 1 and the values of x, y, z are 0.55 ≦ x ≦ 0.85,
0.45 ≦ y ≦ 0.15, 0 ≦ z ≦ 5.0, and (S
r x Ca y Ba z) Bi 2 O 3 as an additive with respect to TiO 3
Is 0.5 to 8.0 mol%, and MgO is 0.5 to 2.
0.02 The Bi 2 O 3 and Nb 2 O 5 a large dielectric ceramic composition comprising a bending strength of 0 mol%, and as an additive
A dielectric ceramic composition having a high withstand voltage of 0.5 mol% and Bi 2 O 3 and ZrO 2 as additives were added in an amount of 0.1%.
The present invention provides a dielectric ceramic composition of 01 to 0.2 mol% having a small capacitance firing temperature dependency.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の誘電体磁器組成物を用いたトリマコン
デンサの断面図
FIG. 1 is a sectional view of a trimmer capacitor using a dielectric ceramic composition of the present invention.

【図2】同じく曲げ強度測定装着のイメージ図[Fig. 2] Similarly, an image diagram of bending strength measurement attachment

【符号の説明】[Explanation of symbols]

1 ステータ電極 2 誘電体磁器板 3 凹部 4 金属ロータ 5 調整用凹部 6 スプリング 7 筒部 8 支点 9 試験片 10 ダイヤルゲージ 1 Stator electrode 2 Dielectric porcelain plate 3 Recessed part 4 Metal rotor 5 Adjustment recessed part 6 Spring 7 Cylindrical part 8 Support point 9 Test piece 10 Dial gauge

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 一般式として(SrxCayBaz)Ti
3で表され、かつx,yおよびzはモル比を表し、x
+y+z=1でx,y,zの値が0.55≦x≦0.8
5、0.45≦y≦0.15、0≦z≦5.0であり、
(SrxCayBa z)TiO3に対して添加剤としてBi
23が0.5〜8.0mol%さらにMgOが0.5〜
2.0mol%からなる誘電体磁器組成物。
1. The general formula (SrxCayBaz) Ti
O3And x, y and z represent a molar ratio, x
+ Y + z = 1, x, y, z values are 0.55 ≦ x ≦ 0.8
5, 0.45 ≦ y ≦ 0.15, 0 ≦ z ≦ 5.0,
(SrxCayBa z) TiO3As an additive to Bi
2O3Is 0.5-8.0 mol%, and MgO is 0.5-
A dielectric ceramic composition comprising 2.0 mol%.
【請求項2】 一般式として(SrxCayBaz)Ti
3で表され、かつx,yおよびzはモル比を表し、x
+y+z=1でx,y,zの値が0.55≦x≦0.8
5、0.45≦y≦0.15、0≦z≦5.0であり、
(SrxCayBa z)TiO3に対して添加剤としてBi
23が0.5〜8.0mol%さらにNb 25が0.0
2〜0.5mol%からなる誘電体磁器組成物。
2. The general formula (SrxCayBaz) Ti
O3And x, y and z represent a molar ratio, x
+ Y + z = 1, x, y, z values are 0.55 ≦ x ≦ 0.8
5, 0.45 ≦ y ≦ 0.15, 0 ≦ z ≦ 5.0,
(SrxCayBa z) TiO3As an additive to Bi
2O3Is 0.5 to 8.0 mol% and further Nb 2OFiveIs 0.0
A dielectric ceramic composition comprising 2 to 0.5 mol%.
【請求項3】 一般式として(SrxCayBaz)Ti
3で表され、かつx,yおよびzはモル比を表し、x
+y+z=1でx,y,zの値が0.55≦x≦0.8
5、0.45≦y≦0.15、0≦z≦5.0であり、
(SrxCayBa z)TiO3に対して添加剤としてBi
23が0.5〜8.0mol%さらにZrO2が0.0
1〜0.2mol%からなる誘電体磁器組成物。
3. The general formula (SrxCayBaz) Ti
O3And x, y and z represent a molar ratio, x
+ Y + z = 1, x, y, z values are 0.55 ≦ x ≦ 0.8
5, 0.45 ≦ y ≦ 0.15, 0 ≦ z ≦ 5.0,
(SrxCayBa z) TiO3As an additive to Bi
2O3Is 0.5-8.0 mol% and further ZrO2Is 0.0
A dielectric ceramic composition comprising 1 to 0.2 mol%.
JP5335844A 1993-12-28 1993-12-28 Dielectric porcelain composite Pending JPH07201225A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5335844A JPH07201225A (en) 1993-12-28 1993-12-28 Dielectric porcelain composite

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5335844A JPH07201225A (en) 1993-12-28 1993-12-28 Dielectric porcelain composite

Publications (1)

Publication Number Publication Date
JPH07201225A true JPH07201225A (en) 1995-08-04

Family

ID=18293030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5335844A Pending JPH07201225A (en) 1993-12-28 1993-12-28 Dielectric porcelain composite

Country Status (1)

Country Link
JP (1) JPH07201225A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001033589A1 (en) * 1999-11-01 2001-05-10 Tdk Corporation Multilayer ceramic electronic component
WO2004077565A1 (en) * 2003-02-27 2004-09-10 Tdk Corporation Thin-film capacitative element and electronic circuit or electronic equipment including the same
JP2006327840A (en) * 2005-05-23 2006-12-07 Tdk Corp Ceramic electronic component and its manufacturing method
JP2010530346A (en) * 2007-06-07 2010-09-09 ヴィシェイ インターテクノロジー インコーポレイテッド Ceramic dielectric formulation for broadband UHF antenna
JP2010215430A (en) * 2009-03-13 2010-09-30 Tdk Corp Dielectric ceramic composition and electronic component

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001033589A1 (en) * 1999-11-01 2001-05-10 Tdk Corporation Multilayer ceramic electronic component
US6510040B1 (en) 1999-11-01 2003-01-21 Tdk Corporation Multilayer ceramic electronic component
WO2004077565A1 (en) * 2003-02-27 2004-09-10 Tdk Corporation Thin-film capacitative element and electronic circuit or electronic equipment including the same
JP2006327840A (en) * 2005-05-23 2006-12-07 Tdk Corp Ceramic electronic component and its manufacturing method
JP2010530346A (en) * 2007-06-07 2010-09-09 ヴィシェイ インターテクノロジー インコーポレイテッド Ceramic dielectric formulation for broadband UHF antenna
JP2010215430A (en) * 2009-03-13 2010-09-30 Tdk Corp Dielectric ceramic composition and electronic component

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