JPH07193281A - Infrared visible light conversion light emitting diode of small directivity - Google Patents

Infrared visible light conversion light emitting diode of small directivity

Info

Publication number
JPH07193281A
JPH07193281A JP5331481A JP33148193A JPH07193281A JP H07193281 A JPH07193281 A JP H07193281A JP 5331481 A JP5331481 A JP 5331481A JP 33148193 A JP33148193 A JP 33148193A JP H07193281 A JPH07193281 A JP H07193281A
Authority
JP
Japan
Prior art keywords
light emitting
emitting diode
infrared
conversion
phosphor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP5331481A
Other languages
Japanese (ja)
Inventor
Yasuyoshi Tomiyama
能省 富山
Hiroyuki Shiraishi
浩之 白石
Masaharu Ishiwatari
正治 石渡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP5331481A priority Critical patent/JPH07193281A/en
Publication of JPH07193281A publication Critical patent/JPH07193281A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body

Landscapes

  • Led Device Packages (AREA)

Abstract

PURPOSE:To remarkably reduce directivity and make possible clear indication in the case of large size, by fixing a fluorescent molded object which dispersedly contains infrared visible light conversion phosphor, so as to keep a specified distance from an infrared light emitting diode. CONSTITUTION:A fluorescent molded object 2 is arranged in the manner in which the inner surface is positioned so as to keep a specified distance, e.g. 1.0mm, from the upper surface of a diode chip 1. For the purpose of protection, the whole part containing the fluorescent molded object 2 is packaged by using a transparent resin mold 7, and conversion light emitting diodes 1-3 are manufactured. A phosphor layer is formed as a dome type fluorescent molded body 2, which is arranged so as to keep a specified distance from the diode chip 1. Thereby the directivity caused by the difference of luminance in the observation direction is reduced, so that clear indication can be obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】この発明は、表示用などに広く用
いられている赤外可視変換発光ダイオード（以下、変換
発光ダイオードという）に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an infrared-visible conversion light emitting diode (hereinafter referred to as a conversion light emitting diode) which is widely used for displays and the like.

【０００２】[0002]

【従来の技術】従来、一般に変換発光ダイオードは赤外
発光部と赤外可視変換蛍光体含有樹脂層（以下、蛍光体
層という）とそれを覆う透明樹脂モールドよりなり、赤
外発光部は図２の概略断面図に示されるように赤外発光
ダイオードチップ１（以下、ダイオードチップという）
のＮ型層を金属ステム４Ａに、同じくＰ型層をリード線
６を経て金属ステム４Ｂにボンディングしてなり、かつ
金属ステム４Ａ、４Ｂは端子５Ａ、５Ｂと一体のものか
らなり、また前記蛍光体層８は赤外可視変換蛍光体（以
下、変換蛍光体という）の粉末を分散含有するエポキシ
樹脂をダイオードチップ１に塗布することによって形成
され、赤外発光部と蛍光体層８が透明樹脂モールド７で
パッケージされている。2. Description of the Related Art Conventionally, a conversion light emitting diode is generally composed of an infrared light emitting portion, an infrared-visible conversion phosphor-containing resin layer (hereinafter referred to as a phosphor layer) and a transparent resin mold covering the infrared light emitting portion. Infrared light emitting diode chip 1 (hereinafter referred to as diode chip) as shown in the schematic sectional view of FIG.
The N-type layer is bonded to the metal stem 4A, and the P-type layer is also bonded to the metal stem 4B via the lead wire 6, and the metal stems 4A and 4B are integrated with the terminals 5A and 5B. The body layer 8 is formed by applying an epoxy resin containing a powder of an infrared-visible conversion phosphor (hereinafter referred to as a conversion phosphor) in a dispersed manner to the diode chip 1, and the infrared light emitting portion and the phosphor layer 8 are transparent resin. It is packaged in the mold 7.

【０００３】また、上記変換発光ダイオードにおいて
は、端子５Ａと５Ｂの間に電圧を加えてダイオードチッ
プ１のＰＮ接合面の近傍からから赤外光を放射し、この
赤外光が上記の蛍光体層８を通過する間に変換蛍光体に
吸収されて特定波長の可視光に変換され透明樹脂モール
ド７を通って外部へ放出される。In the above conversion light emitting diode, a voltage is applied between the terminals 5A and 5B to emit infrared light from the vicinity of the PN junction surface of the diode chip 1, and the infrared light emits the above-mentioned phosphor. While passing through the layer 8, it is absorbed by the conversion phosphor, converted into visible light of a specific wavelength, and emitted to the outside through the transparent resin mold 7.

【０００４】[0004]

【発明が解決しようとする課題】しかし、近年変換発光
ダイオードの大型化はめざましく、高い輝度を持つよう
になったが、上記の従来変換発光ダイオードにおいては
蛍光体層が一般に塗布あるいは滴下などによってダイオ
ードチップ上に形成されているので、均一な被着が困難
となるばかりでなく、この結果観察方向によって輝度が
異なるという指向性があらわれ、表示が不鮮明にならざ
るを得ないというのが現状である。However, in recent years, the conversion light emitting diode has been remarkably increased in size and has a high brightness. In the conventional conversion light emitting diode described above, the phosphor layer is generally formed by coating or dropping. Since it is formed on the chip, not only is it difficult to apply it uniformly, but as a result, there is a directivity that the brightness varies depending on the viewing direction, and the display is obscured. .

【０００５】[0005]

【課題を解決するための手段】そこで、本発明者らは上
述のような観点から、大型化しても鮮明な表示の得られ
る、指向性の少ない発光ダイオードを開発すべく研究を
おこなった結果、上記従来発光ダイオードにおける蛍光
体層をドーム状の蛍光体成型体（以下、蛍光成型体とい
う）とし、これをダイオードチップにたいして所定の距
離を設けて設置した構造とすると観察方向による輝度の
差に起因する指向性が少なくなって鮮明な表示が得られ
るという研究結果を得たのである。Therefore, from the viewpoints described above, the present inventors have conducted research to develop a light emitting diode having a small directivity, which can obtain a clear display even if the size is increased. If the phosphor layer in the conventional light emitting diode is a dome-shaped phosphor molded body (hereinafter referred to as "fluorescent molded body"), and the structure is such that a predetermined distance is provided with respect to the diode chip, it is caused by the difference in brightness depending on the viewing direction. We obtained the research result that the directivity is reduced and a clear display can be obtained.

【０００６】この発明は、上記の研究結果にもとづいて
なされたものであって、赤外発光ダイオードの放射する
赤外光を変換蛍光体を用いて可視光に変換して放射する
変換発光ダイオードにおいて、ダイオードチップに対し
て所定の距離を設けて蛍光成型体を装着することにより
指向性を少なくした変換発光ダイオードに特徴を有する
ものである。The present invention has been made on the basis of the above research results, and in a conversion light emitting diode which converts infrared light emitted from an infrared light emitting diode into visible light by using a conversion phosphor and emits it. The conversion light emitting diode is characterized in that the fluorescent chip is mounted at a predetermined distance from the diode chip to reduce the directivity.

【０００７】[0007]

【実施例】次に、この発明の変換発光ダイオードを実施
例により具体的に説明する。表１に示される３種類の変
換蛍光体を同表１に示される割合でエポキシ樹脂に分散
混合し、これを外径３．０ｍｍ、高さ３．０ｍｍ、厚さ
０．５ｍｍの蛍光成型体とし、図１に見られるように前
述の従来変換発光ダイオードにおける発光部と同じ構造
を持つダイオードチップの上面にたいして１．０ｍｍの
距離を離れて内面が位置するように蛍光成型体を設置
し、更に保護の目的で蛍光成型体を含む全体を透明樹脂
モールド７でパッケージすることにより本発明変換発光
ダイオード１〜３をそれぞれ製造した。つぎに、この結
果得られた本発明変換発光ダイオード１〜３について、
可視光の指向特性を評価する目的で端子５Ａと５Ｂの間
に約１．２ボルトの電圧を加え２０ｍＡの順方向の電流
を流すことによってダイオードチップ１より赤外光を放
射し、可視光の強度を変換発光ダイオードの中心線に対
して３０度の角度で透明樹脂モールド７の表面から３０
ｃｍ離れた位置で、水平面上円周方向に沿って６０度毎
に、光パワーメーターを用いて測定し、また前記中心線
を含む垂直面上で、ダイオードチップ１を中心点として
所定の傾斜角で測定し、中心線上で測定した強度を１０
０として相対強度を算出し、この算出強度を表１に示し
た。EXAMPLES Next, the conversion light emitting diode of the present invention will be specifically described by way of examples. The three types of conversion phosphors shown in Table 1 were dispersed and mixed in the epoxy resin in the proportions shown in Table 1, and this was molded into a phosphor having an outer diameter of 3.0 mm, a height of 3.0 mm and a thickness of 0.5 mm. As shown in FIG. 1, the fluorescent molded body is installed such that the inner surface is located at a distance of 1.0 mm from the upper surface of the diode chip having the same structure as the light emitting portion in the conventional conversion light emitting diode described above. For the purpose of protection, the whole of the converted light emitting diodes 1 to 3 of the present invention was manufactured by packaging the whole including the fluorescent molded body with the transparent resin mold 7. Next, regarding the conversion light emitting diodes 1 to 3 of the present invention obtained as a result,
For the purpose of evaluating the directional characteristics of visible light, a voltage of about 1.2 V is applied between the terminals 5A and 5B and a forward current of 20 mA is applied to emit infrared light from the diode chip 1 to The intensity is converted from the surface of the transparent resin mold 7 at an angle of 30 degrees with respect to the center line of the light emitting diode.
Measured using an optical power meter every 60 degrees along a circumferential direction on a horizontal plane at a position separated by cm, and on a vertical plane including the center line, a predetermined tilt angle with the diode chip 1 as a center point. The strength measured on the center line is 10
The relative intensity was calculated as 0, and the calculated intensity is shown in Table 1.

【０００８】比較の目的で図２に示されるとおり、蛍光
成型体に代わって平均厚さ０．５ｍｍの蛍光体層を塗布
するとともに、空間の形成なくパッケージすること以外
は同一の条件で製造した従来変換発光ダイオード１〜３
について同一の条件で可視光の強度を測定し同じく相対
強度を算出して表１に示した。For the purpose of comparison, as shown in FIG. 2, a phosphor layer having an average thickness of 0.5 mm was applied in place of the phosphor molded body, and the phosphor layer was packaged without forming a space. Conventional conversion light emitting diodes 1-3
The intensity of visible light was measured under the same conditions, and the relative intensity was calculated in the same manner.

【０００９】[0009]

【表１】 [Table 1]

【００１０】なお、本発明発光ダイオードにおいては赤
外光は透過するが可視光を反射する被膜で前記ドーム状
成型体の内面をコーティングしたり、同じく外面を可視
光は透過するが赤外光は反射する被膜でコーティング処
理したりするとより一段と輝度を高めることが出来る。
さらに、発光部を保護するために蛍光成型体の内部を
透明樹脂で充填してもよい。In the light emitting diode of the present invention, the inner surface of the dome-shaped molded body is coated with a film that transmits infrared light but reflects visible light, or the outer surface also transmits visible light but does not emit infrared light. The brightness can be further increased by coating with a reflective film.
Furthermore, in order to protect the light emitting portion, the inside of the fluorescent molded body may be filled with a transparent resin.

【００１１】[0011]

【発明の効果】表１から明らかなように、本発明変換発
光ダイオード１〜３は従来変換発光ダイオードに比して
観測の位置によるばらつきが著しく少なく均一な強度を
示し、極めて指向性が少なく、従って、大型にしても鮮
明な表示が可能となるなど工業上有用な特性を有する。As is apparent from Table 1, the converted light emitting diodes 1 to 3 of the present invention show a uniform intensity with little variation in observation position as compared with the conventional converted light emitting diodes, and have extremely low directivity. Therefore, it has industrially useful characteristics such as a clear display even if it is large.

【図面の簡単な説明】[Brief description of drawings]

【図１】 本発明変換発光ダイオードの断面図FIG. 1 is a sectional view of a conversion light emitting diode of the present invention.

【図２】 従来変換発光ダイオードの断面図FIG. 2 is a sectional view of a conventional conversion light emitting diode.

【符号の説明】[Explanation of symbols]

１． ダイオードチップ ２． 蛍光成型体 ３． 空間 ４Ａ．４Ｂ． 金属ステム ５Ａ．５Ｂ． 端子 ６． リード線 ７． 透明樹脂モールド ８． 蛍光体層 1. Diode chip 2. Fluorescent molding 3. Space 4A. 4B. Metal stem 5A. 5B. Terminal 6. Lead wire 7. Transparent resin mold 8. Phosphor layer

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】 赤外発光ダイオードの放射する赤外光を
赤外可視変換蛍光体を用いて可視光に変換して放射する
赤外可視変換発光ダイオードにおいて、赤外可視変換蛍
光体を分散含有するドーム状樹脂成型体を赤外発光ダイ
オードチップに対して所定の距離を設けて装着してなる
指向性の少ない赤外可視変換発光ダイオード。1. An infrared-visible conversion light-emitting diode, which converts infrared light emitted from an infrared light-emitting diode into visible light by using an infrared-visible conversion phosphor and emits the infrared-visible conversion phosphor, An infrared-visible conversion light emitting diode having a small directivity, which is obtained by mounting a dome-shaped resin molded body on an infrared light emitting diode chip at a predetermined distance.
JP5331481A 1993-12-27 1993-12-27 Infrared visible light conversion light emitting diode of small directivity Withdrawn JPH07193281A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5331481A JPH07193281A (en) 1993-12-27 1993-12-27 Infrared visible light conversion light emitting diode of small directivity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5331481A JPH07193281A (en) 1993-12-27 1993-12-27 Infrared visible light conversion light emitting diode of small directivity

Publications (1)

Publication Number Publication Date
JPH07193281A true JPH07193281A (en) 1995-07-28

Family

ID=18244132

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5331481A Withdrawn JPH07193281A (en) 1993-12-27 1993-12-27 Infrared visible light conversion light emitting diode of small directivity

Country Status (1)

Country Link
JP (1) JPH07193281A (en)

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US6340824B1 (en) * 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
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US6623670B2 (en) 1997-07-07 2003-09-23 Asahi Rubber Inc. Method of molding a transparent coating member for light-emitting diodes
US6812500B2 (en) 1996-06-26 2004-11-02 Osram Opto Semiconductors Gmbh & Co. Ohg. Light-radiating semiconductor component with a luminescence conversion element
JP2006032500A (en) * 2004-07-13 2006-02-02 Fujikura Ltd Light emitting diode lamp and method of manufacturing same
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US9130130B2 (en) 1996-07-29 2015-09-08 Nichia Corporation Light emitting device and display comprising a plurality of light emitting components on mount
US9841175B2 (en) 2012-05-04 2017-12-12 GE Lighting Solutions, LLC Optics system for solid state lighting apparatus
US9951938B2 (en) 2009-10-02 2018-04-24 GE Lighting Solutions, LLC LED lamp

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JP2009065194A (en) * 1996-06-26 2009-03-26 Siemens Ag Light-emitting semiconductor element
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EP2270877A1 (en) * 1996-06-26 2011-01-05 OSRAM Opto Semiconductors GmbH Light-emitting semiconductor device with luminescence conversion element
US6812500B2 (en) 1996-06-26 2004-11-02 Osram Opto Semiconductors Gmbh & Co. Ohg. Light-radiating semiconductor component with a luminescence conversion element
US9196800B2 (en) 1996-06-26 2015-11-24 Osram Gmbh Light-radiating semiconductor component with a luminescence conversion element
JP2008060595A (en) * 1996-06-26 2008-03-13 Siemens Ag Semiconductor element
US9130130B2 (en) 1996-07-29 2015-09-08 Nichia Corporation Light emitting device and display comprising a plurality of light emitting components on mount
JP2002317178A (en) * 1996-09-20 2002-10-31 Siemens Ag Wavelength converting casting material and its manufcturing method and light-emitting device
JP2002317177A (en) * 1996-09-20 2002-10-31 Siemens Ag Method for manufacturing wavelength converting casting material and casting material
CN100367521C (en) * 1996-09-20 2008-02-06 西门子公司 Wavelength-converting casting composition and white light-emitting semiconductor component
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