JPH07192617A - Manufacture of work pattern mask for vacuum adhesive exposure - Google Patents

Abstract

PURPOSE:To improve productivity in a product of aperture grille or the like required for a vacuum adhesive exposure process by shortening this process at a low cost. CONSTITUTION:A photosensitive resist formed on a transparent substrate is worked in a prescribed pattern by exposure using a master pattern mask. On the photosensitive resist worked in this prescribed pattern, a carbon layer 50 is formed. Next, the photosensitive resist of the prescribed pattern is removed, and a carbon layer 50a having a prescribed light shield pattern is formed. In a thickness of the carbon layer 50a having the prescribed light shield pattern, a carbon layer 54 is piled together, or a coloring photosensitive resist 58 is piled together. In this way, the layer is formed in 5mum or more thickness. When vacuum adhesive exposure is performed by using the work pattern mask having this carbon layer shortening an evacuation time can be attained.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a work pattern mask for vacuum contact exposure.

[0002]

2. Description of the Related Art For example, an aperture grill or shadow mask for a color cathode ray tube (CRT), or an IC.
Since it is necessary to form a fine pattern with high precision when manufacturing the lead frame or the like, vacuum contact exposure is performed. A photomask 2 shown in FIG. 6A is known as a work pattern mask used for vacuum contact exposure.

In the photomask 2, a gelatin layer 6 is laminated on the surface of a transparent glass substrate (dry plate) 4, and a light shielding pattern 8 is formed on the gelatin layer 6. In order to perform vacuum contact exposure using this photomask 2, as shown in FIG. 6B, the photomask 2 is arranged so as to face the transferred material 10. The material 10 to be transferred is, for example, a steel plate material for forming an aperture grill, and a photosensitive resist 12 is formed on the surface thereof. The photomask 2 is arranged so as to face the material 10 to be transferred so that the gelatin layer 6 of the photomask 2 faces the photosensitive resist 12 of the material 10 to be transferred. Are brought into close contact with each other, ultraviolet rays are irradiated from the transparent glass substrate 4 side, and vacuum contact exposure is performed. According to the vacuum contact exposure, the light shielding pattern 8 formed on the gelatin layer 6 of the photomask 2 is exposed to the photosensitive resist 1.
2 can be accurately transferred to the transfer target material 10, and highly accurate pattern holes or the like can be formed in the transferred material 10.

[0004]

However, in the photomask 2, the light-shielding pattern 8 is formed on the gelatin layer 6 and has a flat shape, so that it is used for vacuuming during the vacuum adhesion process. There is a problem that the air bleeding process takes time and the index production time cannot be shortened. Alternatively, there is a problem that many exposure apparatuses must be installed in order to shorten the index production time.

The air bleeding process for evacuation takes time because the periphery of the mask 2 comes into close contact with the material to be transferred first during evacuation, so that the air remaining in the central portion is discharged slowly. is there. This tendency becomes more remarkable as the area where the light shielding pattern is formed becomes larger. in recent years,
As the area of the CRT becomes larger, the aperture grill also becomes larger and the area for forming the light shielding pattern tends to become larger.

As a work pattern mask used for manufacturing the aperture grill, a chrome mask is known in addition to a photo mask, but the light shielding pattern of the chrome mask has a thin film thickness of about 1 to 2 μm. It has the same problem as the photomask. Further, chrome masks are generally expensive, and preparing a large number of these masks in order to improve the productivity of the aperture grill and the like leads to an increase in production cost.

The present invention has been made in view of such circumstances, and it is possible to reduce the vacuum contact exposure process at a low cost and improve the productivity of products such as aperture grills that require the vacuum contact exposure process. An object of the present invention is to provide a method of manufacturing a work pattern mask for vacuum contact exposure that can be performed.

[0008]

In order to achieve the above object, a method of manufacturing a work pattern mask for vacuum contact exposure according to the present invention comprises a step of forming a photosensitive resist on a transparent substrate, and a step of forming the photosensitive resist. A step of processing the resist into a predetermined pattern by exposure using a master pattern mask, a step of forming a black-colored particle layer on the photosensitive resist processed into the predetermined pattern, and a photosensitive property of the predetermined pattern. The step of removing the resist and forming a black-based particle layer having a predetermined light-shielding pattern are basically included.

Preferably, in the method of manufacturing a work pattern mask for vacuum contact exposure, a negative type photosensitive resist for removing a portion other than a light-irradiated portion is applied onto a black-colored particle layer having the predetermined light-shielding pattern. From the opposite side of the transparent substrate on which the photosensitive resist is formed,
A step of irradiating light for exposure, and a step of removing the photosensitive resist in the shadow of the black particle layer having a predetermined light shielding pattern at the time of the exposure, and leaving the photosensitive resist in the reverse pattern of the black particle layer. And a step of further laminating a black-based particle layer on the black-based particle layer and the remaining photosensitive resist, and thereafter, removing the photosensitive resist and forming a thick film black-based black film having a predetermined light shielding pattern. And a step of forming a particle layer, respectively.

Alternatively, in the method of manufacturing a work pattern mask for vacuum contact exposure, a positive type colored photosensitive resist from which a light-irradiated portion is removed is coated on the black-colored particle layer having the predetermined light-shielding pattern. From the step and the opposite side of the transparent substrate on which the colored photosensitive resist is formed,
The method includes a step of irradiating light for exposure and a step of removing the colored photosensitive resist irradiated with light during the above-mentioned exposure and leaving the colored photosensitive resist on the black-based particle layer having a predetermined light shielding pattern.

The black particle layer is preferably a carbon particle layer.

[0012]

In the method for manufacturing a work pattern mask for vacuum contact exposure according to the present invention, a light shielding pattern is formed on a transparent substrate with a black particle layer such as a carbon layer. A black particle layer such as a carbon layer can be manufactured at a lower cost than a chromium layer.

Further, by adopting the manufacturing method of the present invention, the thickness of the black particle layer having a predetermined light-shielding pattern can be increased to 5 μm or more by stacking the black particle layers or by stacking the colored photosensitive resist. It can be formed thick. As a result, if vacuum contact exposure is performed using this work pattern mask, air can be satisfactorily discharged through the gaps between the patterns of the black particle layer during evacuation.

Therefore, the work pattern mask and the material to be transferred can be brought into close contact with each other quickly, and the vacuuming process can be shortened. If the vacuum evacuation process can be shortened, the index production time of products that require the vacuum contact exposure process can be shortened. Therefore, it is not necessary to install a large number of exposure devices in order to shorten the index production time.

[0015]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method of manufacturing a work pattern mask for vacuum contact exposure according to the present invention will be described below in detail with reference to the embodiments shown in the drawings. 1A to 1D are schematic cross-sectional views showing a method of manufacturing a work pattern mask for vacuum contact exposure according to an embodiment of the present invention, and FIGS. 2E to 2H are steps of the process shown in FIG. FIG. 3 (I) is a schematic sectional view showing a subsequent step, FIG. 3 (I) is a schematic sectional view of a work pattern mask for vacuum contact exposure manufactured by the steps shown in FIGS. 1 and 2, and FIG. FIG. 4 is an explanatory view for performing vacuum contact exposure using the work pattern mask shown in FIG. 4, FIG. 4 is a flowchart showing the manufacturing process of the aperture grill, and FIGS. 5 (F) and 5 (G) are vacuum contact according to another embodiment of the present invention. It is sectional drawing which shows the manufacturing method of the work pattern mask for exposure.

First, an outline of a method of manufacturing an aperture grille as an example of a product requiring vacuum contact exposure will be described with reference to FIG. As shown in FIG. 4, first, at step 20, the sheet material (transferred material) to be the aperture grill is washed. Next, in step 21, the surface of the sheet material is coated with a photosensitive resist. Next, in step 22, for the sheet material,
Perform vacuum contact exposure.

At the time of this vacuum contact exposure, the work pattern mask obtained by the manufacturing method of this embodiment described later is used. Here, a general method of manufacturing a work pattern mask will be described. In step 29, after a master pattern mask is created by an XY plotter or the like, step 30 is performed.
Then, a master negative pattern is created, and a work pattern mask is created in step 31 using this master negative pattern.

After performing vacuum contact exposure using this work pattern mask, the resist is developed in step 23 to obtain a resist having a predetermined pattern that covers the area other than the area where the opening is to be formed in the sheet material. Then step 24
Then, a baking process is performed to cure the resist. The baking processing temperature is, for example, about 230 ° C.

After that, if an etching process is performed in step 25, an aperture grill 36 having openings 34 of a predetermined pattern penetrating the sheet material 32 is obtained. Next, in step 26, the resist is stripped, and step 2
At 8, the aperture grill 36 is inspected. The aperture grill is mounted on the inner surface of the CRT panel glass.

Next, a method of manufacturing a work pattern mask according to an embodiment of the present invention, which is performed in the step 31 shown in FIG. 4, will be described with reference to FIGS. First,
The transparent substrate 40 shown in FIG. 1 is prepared. A glass substrate or the like is used as the transparent substrate 40. The transparent substrate 40 is
First, rinse with pure water. Next, the transparent substrate 40 is rotated by a spinner to shake off the water adhering to the transparent substrate 40. The rotation speed of the transparent substrate 40 by the spinner is, for example, 50 to 150 rpm.

Next, as shown in FIG. 1A, a photosensitive resist 42 is formed on the surface of the transparent substrate 40 by a coating method or the like. The photosensitive resist 42 is formed using, for example, an ammonium dichromate (ADC) -based photosensitive material or a photosensitive material having reciprocity rule inferior characteristics. Next, the transparent substrate 4
0 is rotated by a spinner to make the film thickness of the photosensitive resist 42 attached to the transparent substrate 40 uniform. The rotation speed of the spinner is, for example, 40 to 150 rpm.

Next, the transparent substrate 40 is moved at a low speed (5 to 20 rp).
While rotating with m), resist 42 with a far infrared heater.
To dry. Thereafter, as shown in FIG. 1B, vacuum contact exposure is performed using the master negative pattern mask 45. This master negative pattern mask 45 is a mask formed by vacuum contact exposure in step 30 from the master pattern mask created in step 29 shown in FIG. In this mask 45, a film layer 46 formed on the surface of a transparent substrate 44 such as a glass substrate.
In addition, a predetermined light shielding pattern 48 is formed.

The surface of the transparent substrate 44 on which the light shielding pattern 48 is formed is opposed to the surface of the transparent substrate 40 on which the photosensitive resist 42 is formed, and a vacuum is drawn in these gaps to bring them into close contact with each other. Then, the transparent substrate 44 side is irradiated with ultraviolet rays to perform exposure. Note that the vacuum contact exposure shown in FIG. 1B is an exposure performed for manufacturing a work pattern mask, and unlike the vacuum contact exposure performed in one manufacturing process of the aperture grill, even if it takes time, the aperture contact is performed. It does not reduce the productivity of the grill.

Next, as shown in FIG. 1C, the unexposed portion of the photosensitive resist 42 formed on the surface of the transparent substrate 40 is washed away with pure water spray or the like to form a resist 42a having a predetermined pattern. . Next, the transparent substrate 40 is rotated with a spinner or the like (40 to 150 rpm), and the resist 4
Dry 2a.

Next, as shown in FIG. 1D, while rotating the transparent substrate 40 (for example, 5 to 10 rpm), carbon slurry is injected into the surface of the resist 42a having a predetermined pattern, and the black-based particle layer 50 is formed. To form. The carbon slurry is composed of, for example, a carbon black suspension. The rotation of the transparent substrate 40 causes the carbon slurry to
Spread over the entire surface of the substrate. Therefore, after aging, the excess slurry is collected.

Next, while rotating the transparent substrate 40 with a spinner or the like, the carbon slurry is dried to form a black particle layer 50. At this stage, the thickness of the black-based particle layer 50 is 2 to 3 μm. Then, pure water is sprayed on the surface of the black-colored particle layer 50, and wetting is performed.

Next, as shown in FIG. 2E, the photosensitive resist 42 is diluted with a periodic acid or hydrogen peroxide dilute aqueous solution.
a is dissolved to obtain a black particle layer 50a having an inverted pattern.
The pattern of the black particle layer 50a becomes a light shielding pattern. Then, the aqueous solution is collected, and the entire surface of the transparent substrate 40 is washed with pure water. Then, the transparent substrate 40 is rotated with a spinner or the like (for example, 40 to 150 rpm) to shake off the water.

Next, as shown in FIG. 2 (F), a negative type photosensitive resist 52, which removes portions other than the light-irradiated portion, is coated on the black-colored particle layer 50a. As the negative type photosensitive resist 52, specifically, PVP, PV
A, casein can be used.

The photosensitive resist 52 is formed by rotating the transparent substrate 40 with a spinner or the like (for example, 40 to 150 rp).
By performing m), a uniform and flat film surface is obtained. The photosensitive resist 52 rotates the transparent substrate 40 at a low speed (5 to 20).
rpm) while drying with a far infrared heater.

Next, ultraviolet rays are irradiated from the side of the transparent substrate 40 on which the resist 52 is not formed to expose the photosensitive resist 52 located between the black type particle layers 50a of the light shielding pattern. After that, as shown in FIG. 2G, pure water is sprayed on the surface of the resist 52 to remove the black-based particle layer 50a.
The unexposed portion of the resist 52 shaded with is washed away to form a resist 52a having a predetermined pattern. Then, while rotating the transparent substrate 40 with a spinner or the like (40 to 15
(0 rpm), the surface of the transparent substrate 40 is dried.

Next, as shown in FIG. 2H, a carbon slurry is further injected onto the resist 52a having a predetermined pattern and the black particle layer 50a having a predetermined pattern to form a black particle layer 54. When injecting the carbon slurry, the transparent substrate 40 is rotated at a low speed (5 to 10 rpm). The excess slurry is collected after aging.

Next, while rotating the transparent substrate 40 with a spinner or the like (30 to 120 rpm), the black-based particle layer 54.
To dry. Then, pure water is sprayed on the surface of the black-colored particle layer 54, and wetting is performed. Next, as shown in FIG. 3 (I), the photosensitive resist 52a is dissolved with a diluted aqueous solution of periodic acid or hydrogen peroxide to obtain a thick film black particle layer 54a having an inverted pattern. Then, the aqueous solution is collected, and the entire surface of the transparent substrate 40 is washed with pure water. After that, the transparent substrate 40 is rotated by a spinner or the like (for example, 40 to 150 rp).
m), the work pattern mask 56 used for manufacturing the aperture grill and the like is completed when the water is shaken off and dried. The thickness t of the thick film black particle layer 54a
Is 5 μm or more. To further increase the film thickness of the thick film black particle layer 54a, the process shown in FIG. 2F to the process shown in FIG. 3I may be repeated.

The pattern mutual spacing p of the thick film black particle layer 54a is about 200 for the normal aperture grill formation.
μm, and about 60 μm for forming a fine-pitch aperture grill. It is expected that the narrower the pattern mutual spacing p is, the longer it takes to evacuate during vacuum contact exposure described later. Therefore, it is preferable to increase the thickness t of the thick film black particle layer 54a. If the film thickness t is increased, the flow path cross-sectional area of the pattern mutual interval p is increased, the flow path resistance is reduced, and the vacuuming time can be shortened. For normal aperture grill formation, the film thickness t of the thick film black particle layer 54a is preferably about 5 to 10 μm, and for fine pitch aperture grill formation,
The thickness t of the thick film black particle layer 54a is preferably about 10 to 15 μm.

A transparent protective film can be coated on the surface of the thick film black particle layer 54a shown in FIG. 3 (I). Examples of the transparent protective film include UV-curable resin, lacquer paint, polyvinyl chloride resin (PVA) and the like. Next, a case where vacuum contact exposure is performed using the work pattern mask 56 shown in FIG. 3I will be described.

Using this work pattern mask 56,
To perform the vacuum contact exposure, as shown in FIG. 3J, the work pattern mask 56 is arranged so as to face the material sheet 33 as the material to be transferred. Transferred material 33
Is a steel plate material for forming an aperture grill, and a photosensitive resist 33 is formed on its surface. The work pattern mask 56 is arranged so as to face the material sheet 32 so that the black-colored particle layer 54a of the work pattern mask 56 faces the photosensitive resist 33 of the material sheet 32, and then these gaps are evacuated. Vacuum at the vacuum degree, 1 × 10 for example ^- on the order 1torr or less. By this evacuation, the material sheet 32 and the mask 56
And can be closely attached. After that, ultraviolet irradiation is performed from the transparent substrate 40 side, vacuum contact exposure is performed, and the photosensitive resist 33 is exposed to light in the reverse pattern of the black-based particle layer 54a. According to this vacuum contact exposure, the reverse pattern of the black-based particle layer 54a formed on the work pattern mask 56 can be accurately transferred to the photosensitive resist 33, and in step 25 shown in FIG. Therefore, it becomes possible to form the highly accurate opening 34 in the material sheet 32.

Moreover, in this embodiment, air can be satisfactorily discharged through the gaps between the patterns of the thick film black particle layer 54a during the evacuation shown in FIG. 3 (J). Therefore, the work pattern mask 56 and the material sheet 32 can be quickly brought into close contact with each other, and the vacuuming process can be shortened. If the vacuum evacuation process can be shortened, the index production time of products that require the vacuum contact exposure process can be shortened. Therefore, it is not necessary to install a large number of exposure devices in order to shorten the index production time.

Next, a method of manufacturing a work pattern mask for vacuum contact exposure according to another embodiment of the present invention will be described. In this embodiment, as shown in FIG.
After the step shown in (E) is completed, a positive type colored photosensitive resist 58 from which the light-irradiated portion is removed is applied onto the black-based particle layer 50a. The positive type colored photosensitive resist 58 is preferably an ultraviolet absorbing resist, and specifically, a novolac positive resist can be used.

The colored photosensitive resist 58 is formed on the transparent substrate 40.
Is rotated by a spinner or the like (for example, 40 to 150 r
pm), a uniform and flat film surface is obtained. The colored photosensitive resist 58 rotates the transparent substrate 40 at a low speed (5
(~ 20 rpm) while being dried by a far infrared heater.

Next, ultraviolet rays are radiated from the side of the transparent substrate 40 on which the colored resist 58 is not formed, and the photosensitive resist 52 located between the black-based particle layers 50a having a predetermined pattern.
To expose. Thereafter, as shown in FIG. 5G, pure water is sprayed on the surface of the colored photosensitive resist 58 to wash away the resist 58 on the exposed portion, and the colored cap layer 58a is formed on the black particle layer 50a having a predetermined pattern. Form. Then, while rotating the transparent substrate 40 with a spinner or the like (40 to 150 rpm), the surface of the transparent substrate 40 is dried to manufacture the work pattern mask 56a.

The colored cap layer 58a is the black-based particle layer 5
It has a function of increasing the film thickness of 0a and also functions as a protective layer of the black-based particle layer 50a. In this example,
It is possible to extremely easily increase the thickness of the black-based particle layer 50a without re-stacking the black-based particle layer.
If vacuum contact exposure is performed using this work pattern mask 56a, it is possible to shorten the vacuuming process time as in the above-described embodiment.

The present invention is not limited to the above-mentioned embodiments, but can be variously modified within the scope of the present invention. For example, the black particle layer is not limited to a carbon layer as long as it is a black particle layer that has good adhesion to a transparent substrate and shields ultraviolet light to some extent, and is, for example, an ultraviolet absorbing type of about 0.2 μm or less. It may be composed of a fine particle layer or the like.

Further, in the above embodiment, the work pattern mask for manufacturing the aperture grill of the CRT has been described, but the work pattern mask manufactured by the manufacturing method of the present invention manufactures all products using vacuum contact exposure. It can be used in the process.

[0043]

As described above, according to the present invention, since the light shielding pattern is formed on the transparent substrate by the black type particle layer such as the carbon layer, the work pattern mask having the chrome layer is formed. It can be manufactured at a lower cost than the conventional one.

Further, by adopting the manufacturing method of the present invention, the thickness of the black particle layer having a predetermined light-shielding pattern is increased to 5 μm or more by stacking the black particle layers or stacking the colored photosensitive resist. It can be formed thick. As a result, if vacuum contact exposure is performed using this work pattern mask, air can be satisfactorily discharged through the gaps between the patterns of the black particle layer during evacuation.

Therefore, the work pattern mask and the material to be transferred can be quickly brought into close contact with each other, and the vacuuming process can be shortened. If the vacuum evacuation process can be shortened, the index production time of products that require the vacuum contact exposure process can be shortened. Therefore, it is not necessary to install a large number of exposure devices in order to shorten the index production time.

[Brief description of drawings]

1A to 1D are schematic sectional views showing a method for manufacturing a work pattern mask for vacuum contact exposure according to an embodiment of the present invention.

2 (E) to (H) are schematic cross-sectional views showing a step that follows the step shown in FIG.

3 (I) is a schematic cross-sectional view of the work pattern mask for vacuum contact exposure manufactured in the steps shown in FIGS. 1 and 2, and FIG. 3 (J) is the work pattern mask shown in FIG. 3 (I). It is explanatory drawing which performs vacuum contact exposure using.

FIG. 4 is a flowchart showing a manufacturing process of the aperture grill.

5 (F) and 5 (G) are sectional views showing a method of manufacturing a work pattern mask for vacuum contact exposure according to another embodiment of the present invention.

FIG. 6A is a cross-sectional view of a main part of a work pattern mask according to a conventional example, and FIG. 6B is an explanatory diagram of performing vacuum contact exposure using the work pattern mask.

[Explanation of symbols]

32 ... Sheet material 33 ... Photosensitive resist 34 ... Opening 36 ... Aperture grill 40 ... Transparent substrate 42 ... Photosensitive resist 44 ... Transparent substrate 45 ... Master negative pattern 42a ... Photosensitive resist 50 of predetermined pattern ... Black-based particle layer 50a ... Black pattern particle layer 52 having a predetermined pattern (light shielding pattern) ... Negative photosensitive resist 52a ... Photosensitive resist pattern 54 having a predetermined pattern ... Black particle layer 54a ... Thick film black particle layer 56 ... Work pattern mask

Claims (4)

[Claims] 1. A step of forming a photosensitive resist on a transparent substrate, a step of processing the photosensitive resist into a predetermined pattern by exposure using a master pattern mask, and a photosensitive film processed into the predetermined pattern. Work for vacuum contact exposure having a step of forming a black-colored particle layer on a photosensitive resist, and a step of removing the photosensitive resist having the predetermined pattern to form a black-based particle layer having a predetermined light-shielding pattern Pattern mask manufacturing method. 2. A step of applying a negative-type photosensitive resist on the black-colored particle layer having the predetermined light-shielding pattern to remove portions other than the light-irradiated portion, and a transparent substrate on which the photosensitive resist is formed. From the side opposite to the step of irradiating light for exposure, and removing the photosensitive resist in the shadowed portion of the black-based particle layer having a predetermined light-shielding pattern during the above-mentioned exposure, and exposing with a reverse pattern of the black-based particle layer. Of leaving a photosensitive resist, a step of further laminating a black-based particle layer on the black-based particle layer and the remaining photosensitive resist, and then removing the photosensitive resist to have a predetermined light-shielding pattern. The method for producing a work pattern mask for vacuum contact exposure according to claim 1, further comprising at least one or more steps of forming a thick film black-based particle layer. 3. A step of applying a positive type colored photosensitive resist from which a light-irradiated portion is removed onto the black-colored particle layer having the predetermined light-shielding pattern, and a transparent step in which the colored photosensitive resist is formed. From the opposite side of the substrate, a step of irradiating light for exposure, and removing the colored photosensitive resist irradiated with light during the exposure, on a black-based particle layer having a predetermined light shielding pattern,
The method for producing a work pattern mask for vacuum contact exposure according to claim 1, further comprising the step of leaving the colored photosensitive resist. 4. The method for manufacturing a work pattern mask for vacuum contact exposure according to claim 1, wherein the black-colored particle layer is a carbon particle layer.