JPH0719143Y2 - ガス導入装置を有するｃｖｄ装置 - Google Patents

ガス導入装置を有するｃｖｄ装置

Info

Publication number
JPH0719143Y2
JPH0719143Y2 JP1990044038U JP4403890U JPH0719143Y2 JP H0719143 Y2 JPH0719143 Y2 JP H0719143Y2 JP 1990044038 U JP1990044038 U JP 1990044038U JP 4403890 U JP4403890 U JP 4403890U JP H0719143 Y2 JPH0719143 Y2 JP H0719143Y2
Authority
JP
Japan
Prior art keywords
gas
injector
reaction tube
holder
cvd apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1990044038U
Other languages
English (en)
Japanese (ja)
Other versions
JPH044736U (cs
Inventor
光利 首藤
Original Assignee
日本エー・エス・エム株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本エー・エス・エム株式会社 filed Critical 日本エー・エス・エム株式会社
Priority to JP1990044038U priority Critical patent/JPH0719143Y2/ja
Publication of JPH044736U publication Critical patent/JPH044736U/ja
Application granted granted Critical
Publication of JPH0719143Y2 publication Critical patent/JPH0719143Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP1990044038U 1990-04-26 1990-04-26 ガス導入装置を有するｃｖｄ装置 Expired - Lifetime JPH0719143Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990044038U JPH0719143Y2 (ja) 1990-04-26 1990-04-26 ガス導入装置を有するｃｖｄ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990044038U JPH0719143Y2 (ja) 1990-04-26 1990-04-26 ガス導入装置を有するｃｖｄ装置

Publications (2)

Publication Number Publication Date
JPH044736U JPH044736U (cs) 1992-01-16
JPH0719143Y2 true JPH0719143Y2 (ja) 1995-05-01

Family

ID=31556980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990044038U Expired - Lifetime JPH0719143Y2 (ja) 1990-04-26 1990-04-26 ガス導入装置を有するｃｖｄ装置

Country Status (1)

Country Link
JP (1) JPH0719143Y2 (cs)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110232568A1 (en) * 2009-09-25 2011-09-29 Ferrotec (Usa) Corporation Hybrid gas injector
US20170167023A1 (en) * 2015-12-09 2017-06-15 Lam Research Corporation Silicon or silicon carbide gas injector for substrate processing systems

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100230151B1 (ko) * 1996-07-23 1999-11-15 윤종용 저압 화학기상증착 설비의 종형 확산로에서 사용되는 가스노즐 고정장치
JP5237133B2 (ja) * 2008-02-20 2013-07-17 株式会社日立国際電気 基板処理装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62168638U (cs) * 1986-04-17 1987-10-26
JPS62190335U (cs) * 1986-05-23 1987-12-03

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110232568A1 (en) * 2009-09-25 2011-09-29 Ferrotec (Usa) Corporation Hybrid gas injector
US20170167023A1 (en) * 2015-12-09 2017-06-15 Lam Research Corporation Silicon or silicon carbide gas injector for substrate processing systems

Also Published As

Publication number Publication date
JPH044736U (cs) 1992-01-16

Similar Documents

Publication Publication Date Title
KR100435119B1 (ko) 매엽식처리장치
US5192371A (en) Substrate supporting apparatus for a CVD apparatus
US6039812A (en) Device for epitaxially growing objects and method for such a growth
CN100414004C (zh) 通过气相淀积制备单晶的设备和方法
TW201945580A (zh) 基材製程裝置及方法
TWI589724B (zh) 熱絲化學氣相沉積腔室之噴頭設計
US5458685A (en) Vertical heat treatment apparatus
KR20090066247A (ko) 증착 장치
JP6792083B2 (ja) 気相成長装置、及び、気相成長方法
JP3338884B2 (ja) 半導体処理装置
JP3115335B2 (ja) 融液補給装置
US5746824A (en) Method and apparatus for producing a single crystal
KR100296998B1 (ko) 반도체 제조장치
US3704987A (en) Device for the epitaxialy deposition of semiconductor material
JPH0719143Y2 (ja) ガス導入装置を有するｃｖｄ装置
WO2002091448A1 (fr) Dispositif de croissance a phase gazeuse
US4582020A (en) Chemical vapor deposition wafer boat
US6194030B1 (en) Chemical vapor deposition velocity control apparatus
KR20150071850A (ko) 가스배출관 및 이를 포함하는 잉곳성장장치
US6027569A (en) Gas injection systems for a LPCVD furnace
JPH08148439A (ja) 薄膜気相成長装置
JP2000349030A (ja) 気相反応装置
JP6052051B2 (ja) 炭化珪素単結晶の製造装置
JP2022105278A (ja) コーティング装置およびそのキャリヤ受座
JPS6168393A (ja) ホツトウオ−ル形エピタキシヤル成長装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term