JPH0718426A - Vapor-deposition device - Google Patents

Abstract

PURPOSE:To move the position of a film thickness distribution on a substrate, to widen the film forming range and to widely form a uniformly distributed film on the entire large-area substrate by providing a second magnetic field generator having a means for reversing the direction of the magnetic field to a vapor-deposition device. CONSTITUTION:A rotating shaft 9 for simultaneously reversing the directions of the magnetic fields generated by a first magnetic field generator 7 and a second magnetic field generator 8, a motor 10 for rotating the shaft and a power source 11 having a magnetic field reversing mechanism are provided to reverse the magnetic field in a short time. Consequently, the position of the film thickness distribution on the substrate is moved to increase the film forming range with one plasma gun, and a uniformly distributed film is widely formed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor deposition apparatus for ion plating.

[0002]

2. Description of the Related Art Conventionally, a vapor deposition apparatus has been widely used as a film forming apparatus for optical thin films, decorative thin films, hard coating thin films, flat panel display thin films and the like.
Further, recently, a hollow cathode type gun and a pressure gradient type plasma gun are provided to guide the plasma flow generated by arc discharge to the raw material to heat the raw material, and ion plating is performed by utilizing the high reactivity of the plasma. A high-speed vapor deposition device (hereinafter, simply referred to as vapor deposition device) has been developed.

[0003]

However, when a film is formed on the surface of the substrate by using this type of vapor deposition apparatus, the portion where the film thickness of the surface of the substrate becomes thicker extends the center of the plasma gun (hereinafter
It is not symmetrical with respect to the center), and a phenomenon occurs in which it shifts in a specific direction. The above-mentioned phenomenon becomes an important problem especially when a uniform film is formed on a flat and large-area substrate surface.

[0004]

The present invention has been made to solve the above-mentioned problems, and holds a film forming chamber for forming a thin film on the surface of a substrate by vacuum evaporation, and an evaporation raw material as a material for the thin film. A deposition material container, a plasma gun capable of forming a plasma flow for evaporating the deposition material in the film forming chamber, a power source for performing discharge using the plasma gun as a cathode and the deposition material container as an anode, and the deposition from the plasma gun. In a vapor deposition apparatus having a first magnetic field generator on the plasma gun side for producing a magnetic field for guiding a plasma flow to a raw material container and a second magnetic field generator on the vapor deposition raw material side, The present invention provides a vapor deposition device having means for simultaneously reversing the directions of magnetic fields produced by the second magnetic field generator.

FIG. 1 is a first embodiment of the device of the present invention. A film forming chamber 1 that is evacuated by a vacuum evacuation unit such as an evacuation pump 13 and a substrate 2 with the film forming surface facing downward are arranged inside the chamber. Placing the plasma gun 3 on the side of the film forming chamber,
The plasma flow 4 is drawn into the film forming chamber. The vapor deposition raw material 5 is housed in a vapor deposition raw material container 6 capable of having an anode potential with respect to the plasma gun, and a magnetic field is generated from the plasma gun 3 to the vapor deposition raw material container 6 or vice versa. The second magnetic field generator 8 is arranged on the side of the apparatus 7 and the raw material container. The gun is powered by power supply 12. Plasma 4
The magnetic fields generated by the first magnetic field generator 7 and the second magnetic field generator 8 are adjusted so that the flow can reach the vapor deposition raw material container 6 from the plasma gun 3, and the raw materials are vaporized and reacted to form on the substrate surface. To film. The direction of the magnetic field at this time can be reversed by using the rotating shaft 9 for reversing the magnetic field of the second magnetic field generator 8, the rotating motor 10, and the power supply 11 with the magnetic field reversing mechanism. The reversal of the magnetic field composed of the second magnetic field generator 8, the rotary shaft 9 and the rotation motor 10 is not limited to the mechanism, and is characterized in that it can be reversed in a short time.

[0006]

FIG. 2 is a film thickness distribution on a flat substrate surface before using the vapor deposition device of the present invention. FIG. 3 shows a film thickness distribution deposited on a flat substrate surface in a state where the magnetic field direction is reversed according to the present invention. In the figure, the vertical axis indicates the film thickness, and the circle mark on the horizontal axis indicates the position where the central axis of the plasma gun (hereinafter referred to as the gun) is located. The same applies to the following figures. As is apparent from FIGS. 2 and 3, the apparatus of the present invention allows the maximum value of the film thickness to be moved to the side opposite to the center of the gun.

[0007]

【Example】

Example 1 FIG. 4 is a film thickness distribution obtained by forming a film on a substrate on one plane without inverting the magnetic field and then inverting the magnetic field according to the first example of the apparatus of the present invention. . The film thickness distribution is a superposition of the film thickness distributions that are offset from the center of the gun to the left and right, resulting in a uniform film thickness distribution over a wide range. By inverting, the area where the difference in film thickness falls within the range of ± 10% was increased by about 50%. Even if the reversal of the magnetic field is performed during the discharge, or if the discharge is stopped and then reversed and the film is formed again, the uniformizing effect is the same. Further, although the number of times of reversal is two here, it may be any number of times.

Embodiment 2 FIG. 5 is an example of a second embodiment of the device of the present invention. Two
It is a top view of an apparatus when using one gun. The magnetic field directions of the two magnetic field generators are the same, and FIG. 6 shows a film thickness distribution when a film is formed on a flat substrate by a solid line and a broken line. The film thickness distribution indicated by the solid line is obtained by changing the magnetic field direction for both guns so as to have the film thickness distribution indicated by the broken line. The solid line can shift the film thickness distribution to the right of the center of each gun, and the broken line can shift it to the left. Two guns are used here, but three or more guns are also possible.

Embodiments 3 to 4 As Embodiment 3, when two guns are used and two magnetic field generators are arranged so that the magnetic field directions are opposite to each other, a film is formed on a flat substrate. The film thickness distribution is shown in FIG. Example 4 is shown in FIG. 8 in which both the directions of the magnetic fields of the magnetic field generator at the time of film formation in FIG. 7 are changed. In the case of FIG. 7, a thick film can be formed at the center of the substrate on a plane. In the case of FIG. 8, a thick film can be formed on both ends of the flat substrate. Two guns are used here, but three or more guns are also possible.

Embodiment 5 FIG. 9 shows a substrate on a plane in which two guns of the apparatus of the present invention are used and the magnetic field of the magnetic field generator is reversed after the first film formation to perform the second film formation. It is the film thickness distribution of the film formed. The film thickness distribution of the substrate on the plane is a superposition of the film thickness distributions whose centers are shifted to the left and right, and the film thickness can be uniformly formed over a wide range. Here, the film is formed using two guns.
It is also possible to form a film with three or more guns.

Here, the reversal of the magnetic field is simultaneously performed for all the guns, but there may be a time difference, and a gun having a different number of times of reversing the magnetic field or a gun not reversing the magnetic field is included. May be. Further, the reversal of the magnetic field can be performed with the discharge stopped or during the film formation.

FIG. 10 shows a case where a coil is used as the magnetic field generating means on the raw material container side. Reference numeral 15 is a coil, and 16 is a power source having a magnetic field reversing mechanism.

[0013]

INDUSTRIAL APPLICABILITY The present invention has an effect that the position of the film thickness distribution on the substrate can be moved, and has an effect that the film formation range of one gun can be widened. This has the effect that a film having a uniform distribution can be formed over a wide range on the entire substrate.

[Brief description of drawings]

1 is a cross-sectional side view of a first example of a device according to the invention.

FIG. 2 is a cross-sectional view showing the film thickness of a substrate surface according to a conventional method viewed from the direction 1 in FIG.

FIG. 3 is a cross-sectional view showing the film thickness of a substrate surface according to the method of the present invention viewed from the direction 1 in FIG.

4 is a cross-sectional view showing the film thickness of the substrate surface of Example 1 viewed from the direction 1 in FIG.

FIG. 5 is a top sectional view of a first example of a device according to the present invention.

6 is a cross-sectional view showing the film thickness of the substrate surface of Example 2 viewed from the direction 1 in FIG.

7 is a cross-sectional view showing the film thickness of the substrate surface of Example 3 viewed from the direction 1 in FIG.

8 is a cross-sectional view showing the film thickness of the substrate surface of Example 4 viewed from the direction 1 in FIG.

9 is a cross-sectional view showing the film thickness of the substrate surface of Example 5 viewed from the direction 1 in FIG.

FIG. 10 is a side sectional view of a third example of a device according to the present invention.

[Explanation of symbols]

 1: Vacuum deposition chamber 2: Substrate 3: Plasma gun 4: Plasma flow 5: Vapor deposition material 6: Vapor deposition material container 7: First magnetic field generator 8: Second magnetic field generator 9: Rotating shaft 10: Rotating motor 11, 16: Power supply equipped with magnetic field reversal mechanism 12: Plasma gun power supply 13: Exhaust pump 15: Coil

Claims (3)

[Claims] 1. A film forming chamber for forming a thin film on a substrate surface by vacuum evaporation, an evaporation source container for holding an evaporation source as a material for the thin film, and a plasma flow for evaporating the evaporation source in the film forming chamber. A possible plasma gun, a power source for discharging with the plasma gun as the cathode and the vapor deposition source container as the anode, and the first on the plasma gun side for creating a magnetic field for guiding the plasma flow from the plasma gun to the vapor deposition source container. And a second magnetic field generator on the side of the vapor deposition raw material, and a means for simultaneously reversing the directions of the magnetic fields produced by the first and paired second magnetic field generators. A vapor deposition device characterized by the above. 2. The vapor deposition apparatus comprises a plurality of plasma guns and first and second magnetic field generators, and at least 1
Magnetic field by two first magnetic field generators and second paired
2. The film formation can be performed in a state in which the magnetic field generated by the magnetic field generator of 1 is reversed with respect to the magnetic field generated by the other first magnetic field generator and the magnetic field generated by the second magnetic field generator that forms a pair. Vapor deposition equipment. 3. The vapor deposition apparatus comprises a plurality of first and second vapor deposition devices.
The magnetic field generated by at least one first magnetic field generator and the magnetic field generated by the second magnetic field generator that forms a pair can be reversed at least once during film formation. Item 3. The vapor deposition device according to Item 1 or 2.