JPH0717971B2 - 帯域精製によるカドミウム及びテルルの精製 - Google Patents
帯域精製によるカドミウム及びテルルの精製Info
- Publication number
- JPH0717971B2 JPH0717971B2 JP61170968A JP17096886A JPH0717971B2 JP H0717971 B2 JPH0717971 B2 JP H0717971B2 JP 61170968 A JP61170968 A JP 61170968A JP 17096886 A JP17096886 A JP 17096886A JP H0717971 B2 JPH0717971 B2 JP H0717971B2
- Authority
- JP
- Japan
- Prior art keywords
- cadmium
- tellurium
- ingot
- amount
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052793 cadmium Inorganic materials 0.000 title claims description 67
- 229910052714 tellurium Inorganic materials 0.000 title claims description 67
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 title claims description 34
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 title claims description 34
- 238000007670 refining Methods 0.000 title claims description 27
- 238000000746 purification Methods 0.000 title description 13
- 239000000463 material Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 11
- 230000005496 eutectics Effects 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 8
- 238000005247 gettering Methods 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 35
- 229910004613 CdTe Inorganic materials 0.000 description 22
- 238000005204 segregation Methods 0.000 description 12
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 11
- 238000007792 addition Methods 0.000 description 11
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 229910052732 germanium Inorganic materials 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004857 zone melting Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910004262 HgTe Inorganic materials 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910008813 Sn—Si Inorganic materials 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000001636 atomic emission spectroscopy Methods 0.000 description 1
- 235000013405 beer Nutrition 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000011403 purification operation Methods 0.000 description 1
- 239000013014 purified material Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/02—Elemental selenium or tellurium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B17/00—Obtaining cadmium
- C22B17/06—Refining
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
- C22B9/02—Refining by liquating, filtering, centrifuging, distilling, or supersonic wave action including acoustic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/89—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by mass-spectroscopy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/800,932 US4690725A (en) | 1985-11-22 | 1985-11-22 | Purification of Cd and Te by zone refining |
| US800932 | 1991-12-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62127431A JPS62127431A (ja) | 1987-06-09 |
| JPH0717971B2 true JPH0717971B2 (ja) | 1995-03-01 |
Family
ID=25179746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61170968A Expired - Fee Related JPH0717971B2 (ja) | 1985-11-22 | 1986-07-22 | 帯域精製によるカドミウム及びテルルの精製 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4690725A (en:Method) |
| JP (1) | JPH0717971B2 (en:Method) |
| CA (1) | CA1254718A (en:Method) |
| DE (1) | DE3624780A1 (en:Method) |
| FR (1) | FR2590596B1 (en:Method) |
| GB (1) | GB2183250B (en:Method) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0623074B2 (ja) * | 1986-04-18 | 1994-03-30 | 日本板硝子株式会社 | カルコゲナイドガラス用原料の精製方法 |
| IT1208340B (it) * | 1987-03-18 | 1989-06-12 | Fiat Auto Spa | Pompa dell acqua per circuiti di raffreddamento di motori a combustione interna per autoveicoli |
| JPH09501738A (ja) * | 1993-08-13 | 1997-02-18 | ジョンソン マッセイ エレクトロニクス，インコーポレイティド | 高純度元素の製法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA770574A (en) * | 1967-10-31 | W. Davies Louis | Zone purifying process | |
| BE510303A (en:Method) * | 1951-11-16 | |||
| US2835612A (en) * | 1954-08-23 | 1958-05-20 | Motorola Inc | Semiconductor purification process |
| FR1250782A (fr) * | 1959-01-23 | 1961-01-13 | Philips Nv | Procédé de purification du germanium |
| NL235410A (en:Method) * | 1959-01-23 | 1900-01-01 | ||
| GB948002A (en) * | 1959-07-23 | 1964-01-29 | Nat Res Dev | Improvements in or relating to the preparation of semiconductor materials |
| FR2172232A1 (en) * | 1972-02-16 | 1973-09-28 | Atomic Energy Commission | Doping cadmium telluride crystals - with gallium/indium/aluminium by soln zone melting |
| US3849205A (en) * | 1973-08-27 | 1974-11-19 | Texas Instruments Inc | Enhancement of solid state recrystallization by induced nucleation |
| US4011074A (en) * | 1974-03-25 | 1977-03-08 | Consortium Fur Elektrochemische Industrie Gmbh | Process for preparing a homogeneous alloy |
| FR2295792A1 (fr) * | 1974-12-24 | 1976-07-23 | Commissariat Energie Atomique | Procede d'elaboration de semi-conducteurs composes |
| DE2607911A1 (de) * | 1976-02-26 | 1977-09-01 | Siemens Ag | Verfahren zur reinigung eines germaniumkoerpers |
| US4507160A (en) * | 1983-12-23 | 1985-03-26 | Texas Instruments Incorporated | Impurity reduction technique for mercury cadmium telluride |
-
1985
- 1985-11-22 US US06/800,932 patent/US4690725A/en not_active Expired - Lifetime
-
1986
- 1986-07-21 CA CA000514220A patent/CA1254718A/en not_active Expired
- 1986-07-22 GB GB8617872A patent/GB2183250B/en not_active Expired - Fee Related
- 1986-07-22 JP JP61170968A patent/JPH0717971B2/ja not_active Expired - Fee Related
- 1986-07-22 DE DE19863624780 patent/DE3624780A1/de active Granted
- 1986-07-22 FR FR8610636A patent/FR2590596B1/fr not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CA1254718A (en) | 1989-05-30 |
| GB2183250A (en) | 1987-06-03 |
| DE3624780A1 (de) | 1987-05-27 |
| US4690725A (en) | 1987-09-01 |
| JPS62127431A (ja) | 1987-06-09 |
| GB2183250B (en) | 1990-05-23 |
| GB8617872D0 (en) | 1986-08-28 |
| FR2590596A1 (fr) | 1987-05-29 |
| DE3624780C2 (en:Method) | 1990-08-23 |
| FR2590596B1 (fr) | 1993-02-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Harman et al. | Preparation and some physical properties of Bi2Te3, Sb2Te3, and As2Te3 | |
| Albers et al. | Preparation and properties of mixed crystals SnS (1− x) Sex | |
| Triboulet et al. | Growth and characterization of Cd1− xMnxTe and MnTe crystals; contribution to the CdTe-MnTe pseudo-binary phase diagram determination | |
| Triboulet | The Travelling Heater Method (THM) for Hg1− xCdxTe and related materials | |
| JP5291028B2 (ja) | アルミニウム材およびその製造方法 | |
| US4003741A (en) | Method of preparation of semiconducting compounds | |
| Cunnell et al. | Technology of gallium arsenide | |
| Su et al. | Growth of ZnTe by physical vapor transport and traveling heater method | |
| Miller et al. | Rare earth compound semiconductors | |
| US4690725A (en) | Purification of Cd and Te by zone refining | |
| US3954518A (en) | Method for reducing compositional gradients in mercury cadmium telluride | |
| US3228805A (en) | Method of producing homogeneous thermoelectric alloy slugs | |
| Weigel et al. | Defects and electrical properties of doped and undoped CdTe single crystals from tellurium-rich solutions | |
| Munirathnam et al. | Purification of tellurium to 6N+ by quadruple zone refining | |
| US2835612A (en) | Semiconductor purification process | |
| Capper | Bulk Bridgman growth of cadmium mercury telluride for IR applications | |
| EP0390671A2 (en) | Process for determination of concentrations of metal impurities in Czochralski single crystal silicon | |
| Król et al. | Infrared studies of Al complexes in zinc sulphide | |
| JP3237408B2 (ja) | 化合物半導体結晶の製造方法 | |
| JP2507938B2 (ja) | 高純度Ｓｉ−Ｂ合金の製造法 | |
| Brent Bollong et al. | The ultrapurification of tellurium | |
| RU2056465C1 (ru) | Способ термообработки сырья для получения кристаллов селенида цинка, активированного теллуром | |
| RU2783391C1 (ru) | Полупроводниковый материал, инфракрасный светоприемный элемент и способ производства полупроводникового материала | |
| Whelan et al. | Separation of sulfur, selenium, and tellurium from arsenic | |
| JPS62252393A (ja) | 光電池用シリコン結晶の獲得方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |