CA1254718A - Purification of cd and te by zone refining - Google Patents

Purification of cd and te by zone refining

Info

Publication number
CA1254718A
CA1254718A CA000514220A CA514220A CA1254718A CA 1254718 A CA1254718 A CA 1254718A CA 000514220 A CA000514220 A CA 000514220A CA 514220 A CA514220 A CA 514220A CA 1254718 A CA1254718 A CA 1254718A
Authority
CA
Canada
Prior art keywords
cadmium
tellurium
amount
added
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000514220A
Other languages
English (en)
French (fr)
Inventor
Roelof P. Bult
Alan B.I. Bollong
Robert F. Redden
Original Assignee
Teck Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teck Metals Ltd filed Critical Teck Metals Ltd
Application granted granted Critical
Publication of CA1254718A publication Critical patent/CA1254718A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/02—Elemental selenium or tellurium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B17/00—Obtaining cadmium
    • C22B17/06—Refining
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
    • C22B9/02—Refining by liquating, filtering, centrifuging, distilling, or supersonic wave action including acoustic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/89—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by mass-spectroscopy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00—Technologies related to metal processing
    • Y02P10/20—Recycling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA000514220A 1985-11-22 1986-07-21 Purification of cd and te by zone refining Expired CA1254718A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/800,932 US4690725A (en) 1985-11-22 1985-11-22 Purification of Cd and Te by zone refining
US800,932 1991-12-02

Publications (1)

Publication Number Publication Date
CA1254718A true CA1254718A (en) 1989-05-30

Family

ID=25179746

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000514220A Expired CA1254718A (en) 1985-11-22 1986-07-21 Purification of cd and te by zone refining

Country Status (6)

Country Link
US (1) US4690725A (en:Method)
JP (1) JPH0717971B2 (en:Method)
CA (1) CA1254718A (en:Method)
DE (1) DE3624780A1 (en:Method)
FR (1) FR2590596B1 (en:Method)
GB (1) GB2183250B (en:Method)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0623074B2 (ja) * 1986-04-18 1994-03-30 日本板硝子株式会社 カルコゲナイドガラス用原料の精製方法
IT1208340B (it) * 1987-03-18 1989-06-12 Fiat Auto Spa Pompa dell acqua per circuiti di raffreddamento di motori a combustione interna per autoveicoli
JPH09501738A (ja) * 1993-08-13 1997-02-18 ジョンソン マッセイ エレクトロニクス,インコーポレイティド 高純度元素の製法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA770574A (en) * 1967-10-31 W. Davies Louis Zone purifying process
BE510303A (en:Method) * 1951-11-16
US2835612A (en) * 1954-08-23 1958-05-20 Motorola Inc Semiconductor purification process
FR1250782A (fr) * 1959-01-23 1961-01-13 Philips Nv Procédé de purification du germanium
NL235410A (en:Method) * 1959-01-23 1900-01-01
GB948002A (en) * 1959-07-23 1964-01-29 Nat Res Dev Improvements in or relating to the preparation of semiconductor materials
FR2172232A1 (en) * 1972-02-16 1973-09-28 Atomic Energy Commission Doping cadmium telluride crystals - with gallium/indium/aluminium by soln zone melting
US3849205A (en) * 1973-08-27 1974-11-19 Texas Instruments Inc Enhancement of solid state recrystallization by induced nucleation
US4011074A (en) * 1974-03-25 1977-03-08 Consortium Fur Elektrochemische Industrie Gmbh Process for preparing a homogeneous alloy
FR2295792A1 (fr) * 1974-12-24 1976-07-23 Commissariat Energie Atomique Procede d'elaboration de semi-conducteurs composes
DE2607911A1 (de) * 1976-02-26 1977-09-01 Siemens Ag Verfahren zur reinigung eines germaniumkoerpers
US4507160A (en) * 1983-12-23 1985-03-26 Texas Instruments Incorporated Impurity reduction technique for mercury cadmium telluride

Also Published As

Publication number Publication date
GB2183250A (en) 1987-06-03
DE3624780A1 (de) 1987-05-27
JPH0717971B2 (ja) 1995-03-01
US4690725A (en) 1987-09-01
JPS62127431A (ja) 1987-06-09
GB2183250B (en) 1990-05-23
GB8617872D0 (en) 1986-08-28
FR2590596A1 (fr) 1987-05-29
DE3624780C2 (en:Method) 1990-08-23
FR2590596B1 (fr) 1993-02-19

Similar Documents

Publication Publication Date Title
US4177087A (en) Manufacture of superconducting members
JP2967780B1 (ja) GaAs単結晶基板およびそれを用いたエピタキシャルウェハ
JP2013064181A (ja) アルミニウム材およびその製造方法
US3512958A (en) Preparation of high purity arsenic
Burger et al. Growth of medium electrical resistivity CdSe single crystals by the temperature gradient solution zoning technique
Rumsby et al. Growth of large indium phosphide crystals
Harman Single crystal growth of Hg1-xCdxTe
Harman Effect of Zone‐Refining Variables on the Segregation of Impurities in Indium‐Antimonide
US4690725A (en) Purification of Cd and Te by zone refining
Bartlett et al. Growth and properties of CdxHg1− xTe crystals
Kitagawara et al. Electron traps in dislocation‐free In‐alloyed liquid encapsulated Czochralski GaAs and their annealing properties
US2835612A (en) Semiconductor purification process
DE1260032B (de) Verfahren zur Bildung einer gleichrichtenden Sperrschicht in einem Halbleiterscheibchen
US3679401A (en) Superconductive alloy and production thereof
Kadečková et al. Growth of High‐Purity Iron Single Crystals
Zaiour et al. Electrical properties study of three highly purified CdTe ingots
Whelan et al. Separation of sulfur, selenium, and tellurium from arsenic
Miotkowska et al. Structural Properties of Cd _1-x Mg _x Te and Cd _1-xy Mg _x Mn _y Te Crystals
Kozlov et al. Determination of the effective segregation coefficients of metallic impurities in gallium during directional solidification
JP2610319B2 (ja) ▲ii▼−▲vi▼族化合物半導体結晶の製造方法
Ashley et al. by the Double Crucible Czochralski Technique
SU970906A1 (ru) Полупроводниковый материал дл СВЧ транзисторов
JPH0476355B2 (en:Method)
Borschensky et al. Monocrystal Dislocationless Si: Ge, Grown From the Melt with Gd Impurity.
JPS61156821A (ja) 液相成長方法

Legal Events

Date Code Title Description
MKEX Expiry