JPH07170723A - Semiconductor stack - Google Patents

Abstract

PURPOSE:To prevent the influence of the rise and fall of a gate signal by the magnetic flux generated by a current in the main circuit. CONSTITUTION:The top and bottom of the insulating plate 7 between a DC conductor 4 on positive side and switching elements 1 and 2 are bent and elongated. A gate resistor 16 is mounted on this extension. Moreover, an emitter pattern and a gate pattern are formed on the rear of the extension of the insulating plate 7, and the gate resistor 16 is connected.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor stack incorporated in a semiconductor power conversion device.

[0002]

2. Description of the Related Art In a semiconductor power conversion device, in order to improve the performance of this power converter, a high frequency PWM control system using a high-speed switching element is increasingly adopted, and the capacity of the semiconductor power conversion device is increased. Accordingly, large capacity elements are connected in parallel and used. Further, in the high frequency PWM control method, it is necessary to reduce the inductance of the conductor connecting the high speed switching elements to suppress the surge voltage generated at the time of switching. Considered to be short.

An example of a conventional semiconductor power converter is shown in FIGS.
This will be described with reference to FIG. The circuit example shown in FIG. 5 is an inverse conversion circuit for one bridge used in a three-phase or single-phase bridge circuit, and is composed of upper and lower two arms between DC power supplies P and N. A pair of P-side switching elements 1 whose collector side is connected to the positive terminal 8 and a pair of N-side switching elements whose collector side is connected to this P-side switching element 1 and whose emitter side is connected to the negative terminal 9 The element 2 constitutes one bridge, and the intermediate point between the switching elements 1 and 2 is connected to the terminal 10 on the AC side.

As for the gate circuits of the switching elements 1 and 2, the drive timing of each switching element is controlled by a control circuit (not shown).
The gate drive substrate 11 receives the signal at 11, and amplifies it into a gate signal required for the switching element, and inputs the gate signal to each of the switching elements 1 and 2.

Here, the gate resistor 16 is provided in the vicinity of the switching elements 1 and 2 which are connected in parallel, and the switching resistance of the switching current generated by the variation of the gate trigger voltage of the switching elements 1 and 2 which are connected in parallel is increased. It is inserted in order to improve the balance, and is required when switching elements are connected in parallel.

6 and 7 show a semiconductor stack in which the inverse conversion circuit shown in FIG. 5 is assembled. Of these, FIG. 7 is a left side view and FIG. 6 is a sectional view taken along line BB of FIG. 6 and 7, in the switching elements 1 and 2, a total of four switching elements for two parallel connection of two arms are attached to the cooling fin 3, and the positive electrode side conductor 4, the negative electrode side conductor 5 and Between the AC side conductors 6 that connect the upper and lower arms,
The insulating plate 7 is sandwiched between the conductors and integrated in a sandwich shape (hereinafter referred to as a collective laminated conductor) and arranged on the upper surfaces of the switching elements 1 and 2.

In this collective laminated conductor, the collector terminal of the positive electrode side switching element 1 is connected to the positive electrode side conductor 4, and the emitter terminal of the positive electrode side switching element 1 and the collector terminal of the negative electrode side switching element 2 are the AC side conductor 6. Further, the emitter terminal of the switching element 2 on the negative electrode side is connected to the conductor 5 on the positive electrode side to reduce the inductance value in the semiconductor stack and suppress the surge voltage at the time of switching.

On the other hand, regarding the gate circuit of each switching element 1 and 2, the gate wiring 1 from the connector 13 of the gate drive substrate 11 to the gate terminal of each switching element 1 and 2.
4, the gate signal is supplied through the relay bushing 15 and the gate resistor 16.

The gate drive substrate 11 is arranged on the upper, lower, left, right, or front surface in the vicinity of the switching element. In FIG. 7, the substrate mounting plate 12 is mounted on the front surface of the switching element via a mounting plate 12a.
It shows an example of mounting and arranging on.

In addition, even if a plurality of switching elements of each arm are connected in parallel, the gate signal is applied to the gate resistor 16
Common signal can be used until
Is required for each switching element. Therefore, the gate wiring 14 is attached to a place other than the switching element, that is, the cooling fin 3 in FIGS. 6 and 7, and is relayed by the insulated relay bushing 15, so that the gate resistor 16 is provided for each switching element. .

[0011]

As described above, when the gate wiring 14 is connected to the switching elements 1 and 2, a conductor for supplying a main circuit current to the positive electrode side conductor 4, the negative electrode side conductor 5 and the alternating current side conductor 6 is provided in the vicinity thereof. , The main circuit conductor is switching a large current at high frequency and high speed by the switching elements 1 and 2, and due to the influence of the magnetic flux generated by the main circuit current, the rise of the gate signal at the time of on / off, Since it is affected by the falling edge, the switching time varies between the parallel connection or between the upper and lower arms, and as a result, the current balance between the switching elements in the parallel connection deteriorates, and the surge voltage of the switching elements in the upper and lower arms becomes different.

For example, in FIG. 8 showing a partially enlarged view of FIG. 5, when the gate signal is turned on and the main circuit current flows from the positive terminal 8 to the AC terminal 10 via the switching element 1, the main circuit current Ic causes Since the generated magnetic flux is as shown by the spiral arrow in the figure, the gate current is suppressed by the change in the magnetic flux interlinking with the gate wiring 14, and the switching time is delayed by the main circuit current.

In order to reduce the influence of the main circuit, it is sufficient to reduce the area of the loop of the gate wiring (the hatched portion in the figure), but since it is necessary to dispose the gate resistor 16 near the switching element, this area is required. Is difficult to reduce.

As a result, although the switching elements are connected in parallel in order to increase the capacity of the converter, the usable capacity is the most mounting condition such as switching surge voltage, current imbalance, and generated heat quantity. It must be lowered to the capacity determined by the switching element which becomes worse.

Therefore, the object of the present invention was made in view of the above problems, and reduces the influence of the main circuit current on the gate wiring of the switching element or the like mounted on the cooling fins to reduce the capacitance of the semiconductor device. Another object of the present invention is to provide a semiconductor stack capable of preventing a decrease in the power consumption.

[0016]

According to a first aspect of the present invention, a positive electrode side conductor and a negative electrode side conductor are connected to one side of a positive electrode side conductor and a negative electrode side conductor and an alternating current side conductor which are stacked via an insulating plate. In a semiconductor stack in which a plurality of switching elements to which the side conductors are connected are provided, and a drive substrate that drives the switching elements via a gate resistor is provided on the other side of the positive electrode side conductor, the negative electrode side conductor, and the AC side conductor, It is characterized in that both ends of the insulating plate are bent toward the switching element side, and a gate resistance is mounted on this bent portion.

In the invention according to claim 2, the positive electrode side conductor, the negative electrode side conductor, and the alternating current side conductor are connected to one side of the positive electrode side conductor, the negative electrode side conductor, and the alternating current side conductor, which are stacked via the insulating plate. In a semiconductor stack in which a plurality of switching elements are provided, and a drive substrate for driving the switching elements via a gate resistor is provided on the other side of the positive electrode side conductor, the negative electrode side conductor, and the AC side conductor, both ends of the insulating plate Is bent toward the switching element, and a gate resistor is mounted on the bent portion to form an auxiliary circuit of the switching element.

[0018]

According to the first aspect of the invention, the conductor connecting the gate and the gate resistance of the switching element is shortened, and the influence of the magnetic flux generated by the main circuit current flowing through the switching element on the gate signal is reduced.

According to the second aspect of the invention,
The conductor connecting the gate and the gate resistance of the switching element is shortened, the influence of the magnetic flux generated by the main circuit current flowing through the switching element on the gate signal is reduced, and the mounting density of the auxiliary circuit components is improved.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. However, the same parts as those of the conventional technique are designated by the same reference numerals and the description thereof will be omitted. FIG. 2 is a left side view corresponding to the semiconductor stack of FIG. 7 shown in the related art.
2 is a sectional view taken along the line AA in FIG. 2 and is a front view corresponding to FIG. 6 similarly shown in the prior art. 3 is a partially enlarged detailed view of FIG. 1, and FIG. 4 is a partially enlarged detailed view of FIG.

1, FIG. 2, FIG. 3, and FIG. 4 are different from the conventional technique shown in FIG. 6 and FIG. 7 in that the left end of FIG. The insulating plate 7 is used by extending the upper and lower ends of the insulating plate 27 and bending it so that it can be directly connected to the gate terminals of the switching elements 1 and 2. Further, a terminal for connecting the gate wiring 14 from the gate drive substrate 11 to the extension portion of the insulating plate 7 and an emitter pattern 19 connected in parallel to the switching element between the parallel connections on the gate emitter side are provided on the back surface of the insulating plate 7. 3 and the gate pattern 20 is arranged so that the gate side is parallel to the surface opposite to the emitter pattern 19 on the gate side, and the gate resistor 16 of each switching element is the gate of the switching element. It is mounted so that it is connected to the terminals.

Therefore, the gate circuit is connected to the gate terminal 17 of the collective laminated conductor via the connector 13 of the gate drive substrate 11 and the gate wiring 14, and the printed circuit formed on the insulating plate on the collective laminated conductor. Thus, the gate signal is supplied to the gate terminal of each switching element via each gate resistor 16.

In the mounting structure of the switching elements 1 and 2 as described above, the main circuit connection between the switching elements is minimized to reduce the inductance value of the semiconductor connection portion, and the surge voltage of the switching elements can be suppressed. By mounting the gate resistor 16, the gate pattern 20, and the emitter pattern 19 on the plate, and arranging the gate pattern 20 and the emitter pattern 19 on the front and back sides of the insulating plate, the magnetic flux generated by the main circuit current and the gate circuit are chained. The intersecting area can be reduced, the influence of the magnetic flux generated by the main circuit current flowing through the switching elements can be reduced, the suppression of the gate current can be prevented, and the current imbalance between the switching elements can be prevented.

By constructing the semiconductor stack as described above, the surge voltage of the main circuit can be suppressed. Since the wiring of the gate signal of the switching element can be configured with a double-sided pattern by using the batch laminated conductor, it is possible to form a gate circuit capable of preventing the influence of the magnetic flux of the main circuit current, and the batch laminated conductor is used. The wiring of the main circuit and the gate circuit can be performed only by attaching to the switching element, the assembling work time of the semiconductor stack can be shortened, and the compact and highly reliable semiconductor power conversion device with high packaging density can be provided.

Although FIG. 1 shows an example in which a gate pattern and a gate resistor are mounted on the batch laminated conductor, in addition to this, a collector / collector is provided to protect the switching element.
Wiring for detecting the voltage between the emitters, wiring for detecting the temperature rise value of the element, wiring for detecting the overcurrent of the element, and the attached electric parts may be mounted, and if the connector is mounted on the batch laminated conductor, The gate signal and the protection detection signal of the switching element can be handled collectively, and in particular, the assembly work time can be shortened and high-density mounting can be performed.

In addition to the above, the batch laminated conductor includes a constant voltage diode capable of protecting against an overvoltage between the gate and the emitter of the switching element, a capacitor for noise suppression, a ferrite core, and the like, and a gate driver. It is also possible to implement the circuit.

[0027]

As described above, according to the invention of claim 1,
A plurality of switching elements for connecting the positive electrode side conductor, the negative electrode side conductor, and the alternating current side conductor are arranged on one side of the positive electrode side conductor, the negative electrode side conductor, and the alternating current side conductor, which are stacked via the insulating plate. In a semiconductor stack in which a drive substrate for driving a switching element via a gate resistor is provided on the other side of the negative electrode side conductor and the AC side conductor, both ends of the insulating plate are bent to the switching element side, and the bent portion is By implementing the gate resistance, the conductor connecting the gate of the switching element and the gate resistance was shortened, and the influence of the magnetic flux generated by the main circuit current flowing through the switching element on the gate signal was reduced. It is possible to obtain a semiconductor stack that can prevent a decrease in capacity due to balance. According to the invention of claim 2, the positive electrode side conductor, the negative electrode side conductor, and the alternating current side conductor are connected to one side of the positive electrode side conductor, the negative electrode side conductor, and the alternating current side conductor, which are stacked via the insulating plate. In the semiconductor stack in which a plurality of switching elements are arranged, and a drive substrate for driving the switching elements via a gate resistor is provided on the other side of the positive electrode side conductor, the negative electrode side conductor, and the AC side conductor, both ends of the insulating plate are By bending to the switching element side and mounting a gate resistor on this bent portion to form an auxiliary circuit of the switching element, the conductor connecting the gate of the switching element and the gate resistor is shortened and flows through the switching element. The influence of the magnetic flux generated by the main circuit current on the gate signal was reduced and the mounting density of the attached circuit components was improved, so that the switching current imbalance While preventing a decrease in the capacitance due, it is possible to obtain a semiconductor stack which can be downsized external raise the packaging density.

[Brief description of drawings]

FIG. 1 is a diagram showing an embodiment of a semiconductor stack of the present invention and is a cross-sectional view taken along the line AA of FIG.

FIG. 2 is a left side view showing an embodiment of the semiconductor stack of the present invention.

FIG. 3 is a partially enlarged detailed view of FIG.

FIG. 4 is a partially enlarged detailed view of FIG.

FIG. 5 is a connection diagram of a semiconductor stack according to the related art and the present invention.

6 is a diagram showing an example of a conventional semiconductor stack, and FIG.
BB sectional drawing of.

FIG. 7 is a left side view showing an example of a conventional semiconductor stack.

FIG. 8 is a partial explanatory view showing the operation of a conventional semiconductor stack.

[Explanation of symbols]

1, 2 ... Switching element, 3 ... Cooling fin, 4 ... Positive electrode side conductor, 5 ... Negative electrode side conductor, 6 ... AC side conductor, 7,27 ... Insulating plate, 8 ... Positive electrode side terminal, 9 ... Negative electrode side terminal , 10 ... AC side terminal, 11 ... Gate drive board, 12 ... Base plate, 13 ...
Connector, 14 ... Gate wiring, 15 ... Gate resistor, 17 ... Gate terminal, 18 ... GateEtter terminal.

Claims (2)

[Claims] 1. A plurality of switching elements in which the positive electrode side conductor, the negative electrode side conductor, and the alternating current side conductor are connected to one side of the positive electrode side conductor, the negative electrode side conductor, and the alternating current side conductor, which are stacked via an insulating plate. In a semiconductor stack in which a drive substrate for driving the switching element via a gate resistance is provided on the other side of the positive electrode side conductor, the negative electrode side conductor, and the alternating current side conductor, both ends of the insulating plate are connected to the switching element side. A semiconductor stack, characterized in that the gate resistance is mounted on the bent portion. 2. A plurality of switching elements connected to the positive electrode side conductor, the negative electrode side conductor, and the alternating current side conductor are disposed on one side of the positive electrode side conductor, the negative electrode side conductor, and the alternating current side conductor, which are stacked via an insulating plate. In a semiconductor stack in which a drive substrate for driving the switching element via a gate resistance is provided on the other side of the positive electrode side conductor, the negative electrode side conductor, and the alternating current side conductor, both ends of the insulating plate are connected to the switching element side. A semiconductor stack, characterized in that the gate resistance is mounted on the bent portion, and an auxiliary circuit for the switching element is formed.