JPH07161935A - Inductor and its manufacture - Google Patents

Inductor and its manufacture

Info

Publication number
JPH07161935A
JPH07161935A JP30651693A JP30651693A JPH07161935A JP H07161935 A JPH07161935 A JP H07161935A JP 30651693 A JP30651693 A JP 30651693A JP 30651693 A JP30651693 A JP 30651693A JP H07161935 A JPH07161935 A JP H07161935A
Authority
JP
Japan
Prior art keywords
layer
electron
group
light
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP30651693A
Other languages
Japanese (ja)
Other versions
JP3522809B2 (en
Inventor
Koji Aono
浩二 青野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP30651693A priority Critical patent/JP3522809B2/en
Publication of JPH07161935A publication Critical patent/JPH07161935A/en
Application granted granted Critical
Publication of JP3522809B2 publication Critical patent/JP3522809B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To simplify a formation process of a magnetic substance layer when forming an inductor comprised of lamination of a conductor layer and a magnetic substance layer on a semiconductor substrate. CONSTITUTION:A photopolymerizing organic monomer layer 2 having side chains of an electron donating group and/or an electron accepting group, which supplies or accepts electrons when irradiated with light, is provided on a semiconductor substrate 1. A required pattern of light is cast on the layer 2 to harden by photopolymerization and a conductor layer 5 of a required pattern is formed on the set layer 3 to overlap each other.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体基板上に導体でコ
イル状に形成されたインダクタ、特に導体の上下両面ま
たは片面に強磁性体層を有するインダクタ及びその製造
方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inductor formed of a conductor on a semiconductor substrate in a coil shape, and more particularly to an inductor having a ferromagnetic material layer on both upper and lower surfaces or one surface of a conductor and a method for manufacturing the same.

【0002】[0002]

【従来の技術】従来、半導体基板上に、コイル状に形成
された導体と、その導体の両面または片面に重ねられて
いる強磁性体層とからなるインダクタを設けることが知
られている。導体層としては金属層が、強磁性体層とし
てはセンダスト合金やフェライトの蒸着層とか、バイン
ダー中に強磁性体粉末を分散させたインクの層などがそ
れぞれ用いられ、写真製版技術によりそれぞれ所定のパ
ターンで基板上に設けられる。
2. Description of the Related Art Conventionally, it has been known to provide an inductor composed of a coil-shaped conductor and a ferromagnetic layer laminated on both sides or one side of the conductor on a semiconductor substrate. A metal layer is used as the conductor layer, a sendust alloy or ferrite vapor-deposited layer is used as the ferromagnetic layer, or an ink layer in which ferromagnetic powder is dispersed in a binder is used. The pattern is provided on the substrate.

【0003】[0003]

【発明が解決しようとする課題】導体層や強磁性体層を
写真製版技術で形成するためには、各層ごとに数工程を
必要とするので、例えば強磁性体層−導体層−強磁性体
層の三層構成のインダクタを製造するには、10数工程
またはそれ以上の工程を必要とし、極めて面倒である。
本発明は、強磁性体層−導体層−強磁性体層の三層構
成、または導電体層−強磁性体層の二層構成からなるイ
ンダクタの製造工程数を減少させようとするものであ
る。
In order to form a conductor layer or a ferromagnetic material layer by photolithography, several steps are required for each layer, and therefore, for example, ferromagnetic material layer-conductor layer-ferromagnetic material. Manufacturing an inductor having a three-layer structure of three layers requires ten steps or more, which is extremely troublesome.
The present invention is intended to reduce the number of manufacturing steps of an inductor having a three-layer structure of a ferromagnetic layer-a conductor layer-a ferromagnetic layer, or a two-layer structure of a conductor layer-a ferromagnetic layer. .

【0004】[0004]

【課題を解決するための手段】本発明においては、イン
ダクタの電流路を構成する導体層に積層される強磁性体
層として、光硬化性の磁性材料を用いる点に特徴があ
る。この用途に適した材料としては、電子供与基または
電子受容基のうちの少くとも一方を官能基として分子内
に含む光重合性モノマーが挙げられる。
The present invention is characterized in that a photo-curable magnetic material is used as a ferromagnetic layer laminated on a conductor layer forming a current path of an inductor. Materials suitable for this application include photopolymerizable monomers containing at least one of an electron donating group or an electron accepting group as a functional group in the molecule.

【0005】上述の光重合性モノマーとしては、例え
ば、光により重合し、ポリジアセチレン結合を生成する
ジアセチレン基やビニル基などを含むものが挙げられ
る。またこの光重合性モノマーは、光重合するものであ
ればいづれの光反応性基でも使用可能であるが、ポリジ
アセチレン結合のようなπ−共役結合を形成するものが
有機強磁性材料におけるの磁気的機能の見地から望まし
い。
Examples of the above-mentioned photopolymerizable monomer include those containing a diacetylene group or a vinyl group which is polymerized by light to form a polydiacetylene bond. This photopolymerizable monomer can be used as any photoreactive group as long as it photopolymerizes. However, a compound that forms a π-conjugated bond such as a polydiacetylene bond is a magnetic substance in an organic ferromagnetic material. Desirable from the standpoint of functional function.

【0006】本発明に用いる光照射によって電子を放出
する官能基、即ち電子供与基は、光照射時に電子を放出
するものであり、そしてその電子を放出してできたカチ
オンラジカルが光重合反応中にも安定に存在することが
できれば、いずれの官能基も使用可能である。具体的に
は、トリフェニル基を有する官能基、ジブチルアミン、
ジプロピルアミン、ジイソプロピルアミン等の置換アミ
ンに代表される脂肪族、アントラセン、ベンゾアントラ
セン、置換ベンゾアントラセン、ジベンゾアントラセ
ン、ビセン、ピレン、ベンゾピレン、ジベンゾピレン、
フェニレンジアミン等の炭素環式芳香族官能基、ピロコ
リン、チオフェン、置換チオフェン、フラン、置換フラ
ン、ピロール、置換ピロール等の複素環式官能基、カル
バゾール更にはテトラチアフルバレンとその誘導体等の
電荷移動錯体を形成する官能基等が挙げられる。尚、も
ちろんこれらの化合物に限られるわけではなく、これら
の官能基の誘導体やこれらの官能基を2種類以上結合し
て組み合わせたような官能基を用いても差し支えない。
The functional group which emits an electron upon irradiation with light, that is, an electron-donating group, which is used in the present invention, releases an electron upon irradiation with light, and the cation radical formed by releasing the electron is used during the photopolymerization reaction. Any functional group can be used as long as it can exist stably. Specifically, a functional group having a triphenyl group, dibutylamine,
Aliphatic typified by substituted amines such as dipropylamine and diisopropylamine, anthracene, benzoanthracene, substituted benzoanthracene, dibenzanthracene, bicene, pyrene, benzopyrene, dibenzopyrene,
Carbocyclic aromatic functional groups such as phenylenediamine, heterocyclic functional groups such as pyrocholine, thiophene, substituted thiophene, furan, substituted furan, pyrrole, and substituted pyrrole, carbazole, and charge transfer complexes such as tetrathiafulvalene and its derivatives. And a functional group that forms Of course, the compounds are not limited to these compounds, and derivatives of these functional groups or functional groups obtained by combining two or more kinds of these functional groups may be used.

【0007】本発明に用いる光照射時に電子を受容する
官能基、即ち電子受容基は、光照射時に放出された電子
を受容するものであり、その電子を受容してできたアニ
オンラジカルが光重合反応中にも安定に存在することが
できれば、いずれの官能基も使用可能である。具体的に
は、アクリル酸、アセトアミド、エチレンオキシド等の
脂肪族官能基、ニトロベンゼン等の炭素環式芳香族官能
基、更にはベンゾキノン、テトラシアノ−P−ベンゾキ
ノン等のベンゾキノン誘導体からなる官能基、テトラシ
アノエチレンやテトラシアノキノジメタンとそれらの誘
導体からなる官能基等の電荷移動錯体を形成する官能基
が挙げられる。尚、もちろんこれらの官能基に限られる
わけではなく、これらの官能基の誘導体やこれらの官能
基を2種類以上結合して組み合わせたような官能基を用
いても差し支えない。
The functional group that accepts electrons upon irradiation with light, that is, the electron-accepting group used in the present invention, accepts electrons emitted upon irradiation with light, and the anion radicals formed by accepting the electrons undergo photopolymerization. Any functional group can be used as long as it can exist stably during the reaction. Specifically, aliphatic functional groups such as acrylic acid, acetamide, and ethylene oxide, carbocyclic aromatic functional groups such as nitrobenzene, and functional groups composed of benzoquinone derivatives such as benzoquinone and tetracyano-P-benzoquinone, tetracyanoethylene. And a functional group forming a charge transfer complex such as a functional group formed of tetracyanoquinodimethane and a derivative thereof. Of course, the functional groups are not limited to these functional groups, and a derivative of these functional groups or a functional group formed by combining two or more kinds of these functional groups and combining them may be used.

【0008】尚、本発明においては、電子供与基と電子
受容基は、両方が光照射によって電子の供与と受容が起
こることが望ましいが、少なくともどちらか一方の官能
基が電子の供与又は受容を起こせば良い。このため、分
子内に電子供与性または電子受容性の官能基のうち、少
なくとも一方を含めば良い。
In the present invention, it is desirable that both the electron donating group and the electron accepting group cause electron donation and acceptance by light irradiation, but at least one of the functional groups is responsible for electron donation or acceptance. You can wake it up. Therefore, at least one of an electron-donating or electron-accepting functional group may be included in the molecule.

【0009】本発明は、上述のような光硬化性強磁性有
機物のモノマーなどの未硬化物を半導体基板上またはそ
の上に形成された導体層を覆って塗布し、これに所要パ
ターンの光を照射してその部分だけを硬化させ、未硬化
部分を溶剤等を用いて除去することにより、所要のパタ
ーンを持った磁性材料層を形成するものである。
In the present invention, an uncured material such as the above-mentioned photo-curable ferromagnetic organic monomer is applied on a semiconductor substrate or a conductor layer formed on the semiconductor substrate to apply a light having a required pattern thereto. By irradiating and curing only that portion and removing the uncured portion with a solvent or the like, a magnetic material layer having a required pattern is formed.

【0010】[0010]

【作用】半導体基板上に上述の光硬化性強磁性有機物の
薄層を設け、写真製版技術により所要のパターンで感光
させると、所要部分だけが硬化するので、未硬化部分を
溶剤により除去することにより、所要パターンの第1の
強磁性材料層が形成される。
[Function] When a thin layer of the above-mentioned photo-curable ferromagnetic organic material is provided on a semiconductor substrate and exposed in a desired pattern by photoengraving technology, only the required portion is cured, so the uncured portion should be removed with a solvent. Thus, the first ferromagnetic material layer having a required pattern is formed.

【0011】次に、上記強磁性材料層を含む半導体基板
の全面に周知のフオトレジスト材料を塗布し、写真製版
技術によりマスクを形成してコイル状の導体層を第1の
強磁性材料層上に形成する。
Next, a well-known photoresist material is applied to the entire surface of the semiconductor substrate including the ferromagnetic material layer, and a mask is formed by photolithography to form a coil-shaped conductor layer on the first ferromagnetic material layer. To form.

【0012】再び半導体基板の全面に光硬化性強磁性有
機物の薄層を設け、これを所要のパターンで感光させ、
未感光部分を除去して第2の強磁性材料層を形成する
と、強磁性有機物の層で挟まれた導体からなるコイルを
得ることができる。なお、第1及び第2の強磁性材料層
は、その一方を省略することができる。
Again, a thin layer of a photocurable ferromagnetic organic material is provided on the entire surface of the semiconductor substrate, and this is exposed in a desired pattern,
By removing the unexposed portion and forming the second ferromagnetic material layer, a coil made of a conductor sandwiched between layers of a ferromagnetic organic material can be obtained. One of the first and second ferromagnetic material layers can be omitted.

【0013】従って、所要のパターンを持った第1及び
第2の強磁性材料層を形成する際には、それ自体を感光
させて所要のパターンを得ることができるため、従来所
要のパターンを得るために採用されていたフオトレジス
ト層を塗布する工程を省略することができる。
Therefore, when forming the first and second ferromagnetic material layers having a desired pattern, the desired pattern can be obtained by exposing itself, and thus the conventionally required pattern is obtained. Therefore, the step of applying the photoresist layer, which has been adopted for this purpose, can be omitted.

【0014】上述の感光過程において、光重合性モノマ
ーが有する電子供与基と電子受容基とは、適当な波長の
光を照射することにより前者は電子を放出してカチオン
ラジカルに変化し、後者はその電子を受容してアニオン
ラジカルに変化する。照射光は選択的にこのような光電
子移動反応を起こさせる必要上、単色性、指向性、時間
制御性に優れたレーザービーム光が望ましい。また、上
述の光照射に際して電場または磁場を印加するときは、
生成したカチオンラジカル及びアニオンラジカルの存在
を安定にすることができる。
In the above-described photosensitization process, the electron-donating group and the electron-accepting group of the photopolymerizable monomer are irradiated with light having an appropriate wavelength to release electrons from the former and change into cation radicals, and the latter to It accepts the electron and changes into an anion radical. Since the irradiation light is required to selectively cause such a photoelectron transfer reaction, a laser beam light excellent in monochromaticity, directivity and time controllability is desirable. Further, when applying an electric field or a magnetic field during the above-mentioned light irradiation,
The presence of the generated cation radical and anion radical can be stabilized.

【0015】上述の光電子移動反応のための光照射と同
時に、またはその後で、別の適当な波長の光を照射する
ことにより、モノマーは、上述のカチオンラジカル及び
アニオンラジカルを保持したまゝ光重合反応を起こして
硬化する。上述の光電子移動反応を行わせてから光重合
反応が完了するまでの間、前述の電場または磁場を印加
し続けることは、カチオンラジカル及びアニオンラジカ
ルの保有状態を固定する上で有益である。
Simultaneously with or after irradiation with light for the above-mentioned photoelectron transfer reaction, the monomer is photopolymerized while retaining the above-mentioned cation radicals and anion radicals by irradiating with light having another appropriate wavelength. It reacts and hardens. Continuing to apply the above-mentioned electric field or magnetic field from the time when the above-mentioned photoelectron transfer reaction is performed to the time when the photopolymerization reaction is completed is useful in fixing the state of holding cation radicals and anion radicals.

【0016】上述のようにして重合硬化した有機物は、
カチオンラジカル及びアニオンラジカルを安定した状態
で保有するため、高い磁気機能を持ち、導体コイルのイ
ンダクタンスを高めることに貢献する。
The organic matter polymerized and cured as described above is
Since it holds cation radicals and anion radicals in a stable state, it has a high magnetic function and contributes to increasing the inductance of the conductor coil.

【0017】[0017]

【実施例】電子供与基及び電子受容基を有する光重合性
ジアセチレンモノマーを適当な溶媒で希釈して半導体基
板1上に塗布し、これを乾燥させて図1(a)に示すよ
うな未硬化層2を作る。この層2に、光電子移動反応の
ための光と、重合反応用の光とで所要のパターンを照射
すると、照射部分だけが重合してポリジアセチレン化合
物に変化し、硬化するので、未照射部分を溶剤で洗い去
ると、図1(b)に示すような所要パターンの硬化層
3、3・・・が得られる。
EXAMPLE A photopolymerizable diacetylene monomer having an electron-donating group and an electron-accepting group was diluted with a suitable solvent and coated on a semiconductor substrate 1, which was then dried to obtain an uncoated layer as shown in FIG. Make a hardened layer 2. When this layer 2 is irradiated with a required pattern of light for photoelectron transfer reaction and light for polymerization reaction, only the irradiated portion is polymerized and converted into a polydiacetylene compound, which is hardened. By washing away with a solvent, the hardened layers 3, 3, ... With a required pattern as shown in FIG. 1B are obtained.

【0018】上記の未硬化層2は、光照射によって次の
ような反応を起こす。図3(a)に示すジアセチレン化
合物モノマー分子21、21・・・はそれぞれ側鎖とし
て電子供与基22及び電子受容基23を有するジアセチ
レン基24で構成されている。これに光電子移動用の光
を照射すると、図3(b)に示すように電子供与基22
は電子を放出してカチオンラジカル25に変化し、電子
受容基23はその放出された電子を受容してアニオンラ
ジカル26に変化する。
The uncured layer 2 causes the following reaction by irradiation with light. The diacetylene compound monomer molecules 21, 21 ... Shown in FIG. 3A are each composed of a diacetylene group 24 having an electron donating group 22 and an electron accepting group 23 as side chains. When this is irradiated with light for photoelectron transfer, as shown in FIG.
Emits an electron and changes into a cation radical 25, and the electron accepting group 23 receives the released electron and changes into an anion radical 26.

【0019】次に、これに光重合用の光を照射すると、
図3(c)に示すように、ジアセチレン基24はカチオ
ンラジカル25及びアニオンラジカル26を保有したま
ゝ重合反応を起こし、ポリジアセチレン化合物27に変
化する。このポリジアセチレン化合物27は、カチオン
ラジカル25及びアニオンラジカル26を有しており、
これらカチオンラジカル25及びアニオンラジカルは化
合物27の側鎖位置にあるため、光照射を止めた後も安
定に存在することができ、高い磁気機能を発揮する。
Next, when it is irradiated with light for photopolymerization,
As shown in FIG. 3C, the diacetylene group 24 undergoes a polymerization reaction while retaining the cation radical 25 and the anion radical 26, and is converted into a polydiacetylene compound 27. The polydiacetylene compound 27 has a cation radical 25 and an anion radical 26,
Since the cation radical 25 and the anion radical are located at the side chain positions of the compound 27, they can exist stably even after the light irradiation is stopped, and exhibit a high magnetic function.

【0020】上述の光電子移動反応用及び重合反応用の
光は、同時に照射してもよい。また、照射時に強い電場
または磁場を印加すれば、発生したカチオンラジカル及
びアニオンラジカルの保有状態をゼーマン効果等によっ
て一層安定させることができる。
The light for the photoelectron transfer reaction and the light for the polymerization reaction may be simultaneously irradiated. Further, if a strong electric field or magnetic field is applied during irradiation, the retained state of the generated cation radicals and anion radicals can be further stabilized by the Zeeman effect or the like.

【0021】基板1上に、通常のフオトレジストを用
い、硬化層3、3・・・に重ねて所要パターンのマスク
層4、4・・・を図1(c)に示すように作り、蒸着及
びメッキによりマスク層を通して図1(d)及び図2
(a)に示す導体層5、5・・・を作り、マスク層4、
4・・・を除去する。なお、図1(d)は図2(a)に
おけるD−D線に沿う断面図である。
On the substrate 1, mask layers 4, 4 ... With a required pattern are formed as shown in FIG. 1 (d) and 2 through the mask layer by plating
The conductor layers 5, 5 ... Shown in FIG.
4 ... is removed. Note that FIG. 1D is a cross-sectional view taken along the line D-D in FIG.

【0022】導体の交叉部に絶縁層6を置き、再びフオ
トレジストによりマスクを作り、図1(e)に示すよう
に導体層5、5・・・の大部分に重なり交叉部において
これを跨ぐ導体層7、7・・・を作る。そして、その上
から基板1の全面に図1(f)に示すように未硬化層2
と同様な未硬化層8を形成し、所要パターンの光電子移
動反応用及び光重合反応用の光を照射して照射部分を重
合硬化させ、未重合部分を除去すると、図1(g)及び
図2(b)に示すようなパターンの硬化層9、9・・・
が得られる。なお、図1(g)は図2(b)におけるG
−G線に沿う断面図である。
An insulating layer 6 is placed at the intersection of the conductors, a mask is again made of photoresist, and as shown in FIG. 1 (e), it overlaps most of the conductor layers 5, 5 ... The conductor layers 7, 7 ... Are made. Then, the uncured layer 2 is formed on the entire surface of the substrate 1 from above, as shown in FIG.
1 (g) and FIG. 1 (g) and FIG. 1 (g) are obtained by forming an uncured layer 8 similar to that of FIG. The cured layers 9, 9 ... Having a pattern as shown in FIG.
Is obtained. It should be noted that FIG. 1 (g) corresponds to G in FIG. 2 (b).
It is sectional drawing which follows the -G line.

【0023】図1(g)及び図2(b)から明らかなよ
うに、導体層7、7・・・で作られているコイルは、両
面を強磁性有機物層3、3及び9、9・・・で挟まれて
いるので、そのインダクタンスを高めることができる。
As is apparent from FIGS. 1 (g) and 2 (b), the coil made of the conductor layers 7, 7 ... Has both sides of the ferromagnetic organic material layers 3, 3 and 9, 9.・ Because it is sandwiched by ・ ・, its inductance can be increased.

【0024】図4は、光硬化性強磁性有機物の他の例を
示す。図4(a)において、ジアセチレン化合物モノマ
ー31、31・・・は、ジアセチレン基32と、電子供
与基33と、電子受容基34と、ジアセチレン基32を
それぞれ電子供与基33及び電子受容基34に結び付け
ているスペーサー35及び36とからなる。
FIG. 4 shows another example of the photo-curable ferromagnetic organic material. In FIG. 4 (a), the diacetylene compound monomers 31, 31 ... Include the diacetylene group 32, the electron donating group 33, the electron accepting group 34, and the diacetylene group 32 as the electron donating group 33 and the electron accepting group, respectively. It consists of spacers 35 and 36 which are attached to a base 34.

【0025】スペーサー35及び36は、光電子移動反
応用の光を照射したときだけ、電子供与基33が放出し
た電子を電子受容基34に運搬するもので、具体的に
は、酸素、硫黄、セレンなどの第6族元素や、炭素数6
以下のメチレン基などの一重結合性官能基が挙げられ
る。
The spacers 35 and 36 carry the electrons emitted from the electron donating group 33 to the electron accepting group 34 only when irradiated with light for photoelectron transfer reaction, and specifically, include oxygen, sulfur and selenium. Group 6 elements such as and carbon number 6
The following are single-bonding functional groups such as methylene group.

【0026】このジアセチレン化合物モノマーは、光電
子移動反応用の光が照射されない限り、電子供与基33
が放出した電子を電子受容基34へ受渡すことができな
い。しかし、これに適当な波長の光電子移動反応用の光
を照射すると、電子供与基33が放出した電子が電子受
容基34に運ばれて、図4(b)に示すようにカチオン
ラジカル37及びアニオンラジカル38を生ずる。
This diacetylene compound monomer has an electron donating group 33 unless the light for photoelectron transfer reaction is irradiated.
It is impossible to transfer the electrons emitted by the electron acceptor group 34. However, when it is irradiated with light for a photoelectron transfer reaction having an appropriate wavelength, the electron released from the electron donating group 33 is carried to the electron accepting group 34, and as shown in FIG. Radicals 38 are generated.

【0027】そして、更に適当な波長の光重合反応用の
光を照射すれば、図4(c)に示すようにジアセチレン
基32はカチオンラジカル37及びアニオンラジカル3
8を保有したまゝ重合してポリジアセチレン化合物39
に変化する。この化合物もまた、図3に示した化合物と
同様に、安定して存在するカチオンラジカル及びアニオ
ンラジカルによって、優れた磁気性能を発揮する。
Then, when light for photopolymerization reaction having an appropriate wavelength is irradiated, the diacetylene group 32 becomes a cation radical 37 and an anion radical 3 as shown in FIG. 4 (c).
Polydiacetylene compound 39 polymerized to retain 8
Changes to. Similar to the compound shown in FIG. 3, this compound also exhibits excellent magnetic performance due to the cation radicals and anion radicals that are stably present.

【0028】[0028]

【発明の効果】以上のように、この発明によるときは、
導体層で形成したコイルのインダクタンスを増大させる
ための強磁性体層として、光硬化性有機物を使用したた
め、直に写真製版技術を適用して、所望のパターンの強
磁性体層を得るための工程を簡略化することができる。
As described above, according to the present invention,
Since a photo-curable organic material was used as the ferromagnetic material layer for increasing the inductance of the coil formed of the conductor layer, the process for directly applying the photoengraving technique to obtain the ferromagnetic material layer of the desired pattern. Can be simplified.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明を実施したインダクタの各製造工程を示
す断面図である。
FIG. 1 is a cross-sectional view showing each manufacturing process of an inductor embodying the present invention.

【図2】上記インダクタの製造中及び完成品の平面図で
ある。
FIG. 2 is a plan view of the inductor during manufacturing and a finished product.

【図3】本発明の実施例に用いる光重合性強磁性有機物
の光照射による変化状態の説明図である。
FIG. 3 is an explanatory diagram of a changed state of the photopolymerizable ferromagnetic organic material used in the examples of the present invention by light irradiation.

【図4】本発明の他の実施例に用いる光重合性強磁性有
機物の光照射による変化状態の説明図である。
FIG. 4 is an explanatory view of a change state of a photopolymerizable ferromagnetic organic material used in another example of the present invention by light irradiation.

【符号の説明】[Explanation of symbols]

1 半導体基板 3 光重合性強磁性有機物の硬化層 5 導体層 7 導体層 9 光重合性強磁性有機物の硬化層 21 ジアセチレン化合物モノマー 22 電子供与基 23 電子受容基 24 ジアセチレン基 25 カチオンラジカル 26 アニオンラジカル 27 ジアセチレン化合物ポリマー DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 3 Hardened layer of photopolymerizable ferromagnetic organic material 5 Conductor layer 7 Conductor layer 9 Hardened layer of photopolymerizable ferromagnetic organic material 21 Diacetylene compound monomer 22 Electron donating group 23 Electron accepting group 24 Diacetylene group 25 Cation radical 26 Anion radical 27 Diacetylene compound polymer

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 半導体基板上にコイル状パターンに形成
された導体層と、この導体層の上下両面またはその片面
に積層されている磁性材料層とよりなり、この磁性材料
層は光硬化性強磁性有機物の光硬化層であることを特徴
とするインダクタ。
1. A conductor layer formed in a coil pattern on a semiconductor substrate, and a magnetic material layer laminated on both upper and lower surfaces of the conductor layer or on one surface thereof. The magnetic material layer is a photocurable strong layer. An inductor characterized by being a photo-cured layer of a magnetic organic material.
【請求項2】 半導体基板上に光硬化性強磁性有機物の
未硬化物を塗布する工程と、この塗布層に所要のパター
ンを感光させて硬化させ未硬化部分を除去する工程と、
残された硬化層の上にコイル状のパターンを有する導体
層を形成する工程とを有するインダクタの製造方法。
2. A step of applying an uncured material of a photocurable ferromagnetic organic material on a semiconductor substrate, and a step of exposing the coating layer to a desired pattern to cure it and removing the uncured portion,
And a step of forming a conductor layer having a coil-shaped pattern on the remaining hardened layer.
【請求項3】 半導体基板上にコイル状のパターンを有
する導体層を形成する工程と、この導体層を覆って上記
半導体基板上に光硬化性強磁性有機物の未硬化物を塗布
する工程と、この塗布層の少くとも上記導電層と重なる
部分を感光させて硬化させ未硬化部分を除去する工程と
を有するインダクタの製造方法。
3. A step of forming a conductor layer having a coil-shaped pattern on a semiconductor substrate, a step of covering the conductor layer and applying an uncured material of a photocurable ferromagnetic organic material on the semiconductor substrate, A method of manufacturing an inductor, comprising the steps of exposing at least a portion of the coating layer overlapping the conductive layer to cure and removing an uncured portion.
【請求項4】 上記光硬化性強磁性有機物の未硬化物
は、光照射によって電子を放出する光電子供与基と、光
照射によって電子を受容する電子受容基の双方または一
方を側鎖に有する光重合性有機物モノマーであることを
特徴とする請求項2または3記載のインダクタの製造方
法。
4. The uncured product of the photocurable ferromagnetic organic material is a photocurable compound having a photoelectron-donating group that emits an electron upon irradiation with light and an electron-accepting group that accepts an electron upon irradiation with light in a side chain. 4. The method for manufacturing an inductor according to claim 2, wherein the inductor is a polymerizable organic monomer.
JP30651693A 1993-12-07 1993-12-07 Inductor Expired - Fee Related JP3522809B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30651693A JP3522809B2 (en) 1993-12-07 1993-12-07 Inductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30651693A JP3522809B2 (en) 1993-12-07 1993-12-07 Inductor

Publications (2)

Publication Number Publication Date
JPH07161935A true JPH07161935A (en) 1995-06-23
JP3522809B2 JP3522809B2 (en) 2004-04-26

Family

ID=17957973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30651693A Expired - Fee Related JP3522809B2 (en) 1993-12-07 1993-12-07 Inductor

Country Status (1)

Country Link
JP (1) JP3522809B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268249A (en) * 2004-03-16 2005-09-29 Philtech Inc Semiconductor device and its manufacturing method
US7129145B2 (en) 1999-02-24 2006-10-31 Hitachi Maxell, Ltd. Method of manufacturing an IC coil mounted in an information carrier
US7923814B2 (en) 2006-01-24 2011-04-12 Samsung Electronics Co., Ltd. Semiconductor device including an inductor having soft magnetic thin film patterns and a fabricating method of the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7129145B2 (en) 1999-02-24 2006-10-31 Hitachi Maxell, Ltd. Method of manufacturing an IC coil mounted in an information carrier
KR100694561B1 (en) * 1999-02-24 2007-03-13 히다치 막셀 가부시키가이샤 Ic device and its production method, and information carrier mounted with ic device and its production method
JP2005268249A (en) * 2004-03-16 2005-09-29 Philtech Inc Semiconductor device and its manufacturing method
US7923814B2 (en) 2006-01-24 2011-04-12 Samsung Electronics Co., Ltd. Semiconductor device including an inductor having soft magnetic thin film patterns and a fabricating method of the same
US8216860B2 (en) 2006-01-24 2012-07-10 Samsung Electronics Co., Ltd. Method of fabricating semiconductor device

Also Published As

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