JPH07153906A - Power semiconductor module - Google Patents

Power semiconductor module

Info

Publication number
JPH07153906A
JPH07153906A JP32620993A JP32620993A JPH07153906A JP H07153906 A JPH07153906 A JP H07153906A JP 32620993 A JP32620993 A JP 32620993A JP 32620993 A JP32620993 A JP 32620993A JP H07153906 A JPH07153906 A JP H07153906A
Authority
JP
Japan
Prior art keywords
external lead
power semiconductor
case
side wall
resin case
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP32620993A
Other languages
Japanese (ja)
Other versions
JP2720008B2 (en
Inventor
Yukiyoshi Nakamura
行良 中村
Toyoji Yasuda
豊二 安田
Toshihide Tokuda
俊秀 徳田
Hideyuki Funamoto
英幸 船本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sansha Electric Manufacturing Co Ltd
Original Assignee
Sansha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sansha Electric Manufacturing Co Ltd filed Critical Sansha Electric Manufacturing Co Ltd
Priority to JP32620993A priority Critical patent/JP2720008B2/en
Publication of JPH07153906A publication Critical patent/JPH07153906A/en
Application granted granted Critical
Publication of JP2720008B2 publication Critical patent/JP2720008B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To improve workability by rigidly fixing an external lead-out terminal to a resin case. CONSTITUTION:The side wall of a resin case is constituted of a holding part 4a, which is extending toward the inside and has an opening part 4d at the center, a groove, which is surrounded with the holding part and provided on an outer wall, and a supporting stage 4b, which is provided at the lower part of the holding part and extending to the inside. Furthermore, an external lead- out terminal 10 is constituted of a notch part 10a, whose width is smaller than the opening part of the holding part, a protruding part 10b protruding to the side of the side wall and a bent part 10c, which is provided at the lower part of the notch part and extending to the inside.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、内部に電力用半導体
チップとこの半導体チップを制御する制御部品とを搭載
し、樹脂封止して得られる電力用半導体モジュールに関
するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power semiconductor module obtained by mounting a power semiconductor chip and a control component for controlling the semiconductor chip inside and sealing with a resin.

【0002】[0002]

【従来の技術】従来の電力用半導体モジュールとして、
図4の断面図に示す構造のものがある。図において2
は、一方の面に絶縁板6を有する金属基板であり、この
絶縁板6上に銅回路(図示せず)が搭載されている。そ
して、銅回路上の必要箇所にクリーム半田を印刷し、半
田上に電力用半導体チップ8及び表面実装部品である抵
抗、IC等の制御部品並びに制御回路との接続ピン12
及び外部引き出し端子10を搭載し、リフロー炉で半田
付けを行う。この後、電力用半導体チップ8と必要な銅
回路6とをワイヤボンディングする。
2. Description of the Related Art As a conventional power semiconductor module,
There is a structure shown in the sectional view of FIG. 2 in the figure
Is a metal substrate having an insulating plate 6 on one surface, and a copper circuit (not shown) is mounted on the insulating plate 6. Then, cream solder is printed at a required position on the copper circuit, and the power semiconductor chip 8 and control components such as resistors and ICs which are surface mounting components, and connecting pins 12 to the control circuit are printed on the solder.
And the external lead-out terminal 10 is mounted, and soldering is performed in a reflow furnace. After that, the power semiconductor chip 8 and the necessary copper circuit 6 are wire-bonded.

【0003】次に金属基板の周縁を後で述べるプリント
回路を取り付けるプリント回路取付突部(図示せず)と
一体成形した樹脂ケース24で覆い、側壁を金属基板に
シリコンゴム等の接着剤で接着する。そして、ケース2
4の上部からシリコンゴムを充填し、120〜150℃
で加熱硬化して、シリコンゴム層26を形成する。つい
で、シリコンゴム層26の上部にエポキシ樹脂を充填
し、120〜150℃で加熱硬化してエポキシ樹脂層2
8を形成する。
Next, the periphery of the metal substrate is covered with a resin case 24 integrally formed with a printed circuit mounting projection (not shown) for mounting a printed circuit described later, and the side wall is bonded to the metal substrate with an adhesive such as silicon rubber. To do. And case 2
4 is filled with silicone rubber from above, 120-150 ° C
Then, the silicon rubber layer 26 is formed by heat curing. Then, an epoxy resin is filled in the upper part of the silicone rubber layer 26, and the epoxy resin layer 2 is cured by heating at 120 to 150 ° C.
8 is formed.

【0004】一方、電力用半導体チップを制御する制御
部品をプリント配線板に搭載し、半田付してプリント回
路を構成する。このプリント回路14に設けた穴(図示
せず)をケースのプリント回路取付突起(図示せず)に
係合し、かつ接続ピン12をプリント回路14に接続
し、半田付けを行う。そして、ケース上部からエポキシ
樹脂を充填し、120〜150℃で加熱硬化させ上部の
エポキシ樹脂層30を形成する。
On the other hand, a control component for controlling a power semiconductor chip is mounted on a printed wiring board and soldered to form a printed circuit. A hole (not shown) provided in the printed circuit 14 is engaged with a printed circuit mounting protrusion (not shown) of the case, and the connecting pin 12 is connected to the printed circuit 14 for soldering. Then, the epoxy resin is filled from the upper part of the case and heated and cured at 120 to 150 ° C. to form the upper epoxy resin layer 30.

【0005】[0005]

【発明が解決しようとする課題】上部のような半導体モ
ジュールを得るに当たって、樹脂ケース24には外部引
き出し端子10を固定するために挿通する穴24aを設
けている。穴24aに一端が固定された外部引き出し端
子を挿通するのは、作業性が悪く、その穴が複数の場合
特に作業性の悪いものであった。そこで、外部引き出し
端子を銅回路6に半田付けする前に、まず複数の外部引
き出し端子10をそれぞれのケース24の穴24aに挿
通し、ケース24を金属基板2に接着し、外部引き出し
端子10を銅回路6に半田付けする試みがなされている
が、外部引き出し端子10をケース24の穴24aに挿
通し、金属基板にセットするまでの搬送時に外れること
があり、この作業も作業性の悪いものであった。また、
外部引き出し端子をケース製造時にケースと同時にモー
ルド形成することもあるが、外部引き出し端子をセット
するのに時間が掛かり作業性の悪いものであった。
In obtaining a semiconductor module such as the upper part, the resin case 24 is provided with a hole 24a through which the external lead terminal 10 is fixed. The workability of inserting the external lead-out terminal whose one end is fixed into the hole 24a is poor, and the workability is particularly poor when the hole is plural. Therefore, before soldering the external lead terminals to the copper circuit 6, first, the plurality of external lead terminals 10 are inserted into the holes 24a of the respective cases 24, the cases 24 are bonded to the metal substrate 2, and the external lead terminals 10 are attached. Attempts have been made to solder to the copper circuit 6, but the external lead terminals 10 may come off during insertion until they are inserted into the holes 24a of the case 24 and set on a metal substrate, and this work also has poor workability. Met. Also,
The external lead terminals may be molded at the same time as the case when the case is manufactured, but it takes time to set the external lead terminals and the workability is poor.

【0006】[0006]

【課題を解決するための手段】本発明は、銅回路を配置
した絶縁板を有する金属基板と、上記銅回路上に少なく
とも電力用半導体チップを載置固定し、さらに一方端が
ケース上部外方に引き出され他方端が銅回路に接続され
る外部引き出し端子とが、上部に開口部を有する樹脂ケ
ースで覆い、ケース内を樹脂封止される半導体モジュー
ルにおいて、上記樹脂ケースの側壁が、内部に向かって
伸び、中央に開放部を有する挾持部と、上記挾持部に囲
まれ側壁に設けられた溝と、上記挾持部の下部に設けら
れ内部に向かって伸びる支持台とにより構成され、か
つ、上記外部引き出し端子が、上記挾持部の開放部より
小さい幅の切欠部と、上記側壁側に向かって突出する突
部と、上記切欠部の下部に設けられ内部に向かって伸び
る折り曲げ部とにより構成されたものである。
According to the present invention, a metal substrate having an insulating plate on which a copper circuit is arranged and at least a power semiconductor chip are mounted and fixed on the copper circuit, and one end of the metal substrate is outside the upper part of the case. In the semiconductor module in which the external lead-out terminal that is drawn out to and the other end is connected to the copper circuit is covered with a resin case having an opening at the top, and the inside of the case is resin-sealed, the side wall of the resin case is The gripping portion extending toward the center and having an opening portion in the center, a groove provided on the side wall surrounded by the gripping portion, and a support base provided in the lower portion of the gripping portion and extending toward the inside, and The external lead terminal includes a cutout portion having a width smaller than the open portion of the holding portion, a protrusion protruding toward the side wall, and a bent portion provided in a lower portion of the cutout portion and extending inward. It is those that are configured.

【0007】[0007]

【作用】樹脂ケースの側壁の挾持部の開放部に外部引き
出し端子の切欠部を通し、外部引き出し端子を下げる
と、支持台に外部引き出し端子の折り曲げ部が支持され
るとともに、外部引き出し端子の突部が樹脂ケースの溝
と係合し、外部引き出し端子が樹脂ケースに強固に支持
される。
[Function] When the cutout portion of the external lead terminal is passed through the opening of the holding portion of the side wall of the resin case and the external lead terminal is lowered, the bent portion of the external lead terminal is supported by the support base and the external lead terminal is projected. The portion engages with the groove of the resin case, and the external lead terminal is firmly supported by the resin case.

【0008】[0008]

【実施例】この発明による電力用半導体モジュールの一
実施例を図1ないし図3に示す。なお、図4に示した従
来のものと同等部分には同一記号を付した。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment of a power semiconductor module according to the present invention is shown in FIGS. The same parts as those of the conventional one shown in FIG.

【0009】樹脂ケース4は、内部に向かって伸び、中
央に開放部4dを有する挾持部4aと、この挾持部4a
に囲まれ側壁に設けられた溝4cと、上記挾持部4aの
下部に設けられ内部に向かって伸びる支持台4bにより
構成されている。また、外部引き出し端子は、挾持部4
aの開放部4dより小さい幅の切欠部10aと、側壁側
に向かって突出するつめ10bと、切欠部10aの下部
に設けられ内部に向かって伸びる折り曲げ部10cとに
より構成されている。
The resin case 4 extends inwardly and has a holding portion 4a having an opening 4d at the center, and the holding portion 4a.
It is constituted by a groove 4c surrounded by and provided on the side wall, and a support base 4b provided at a lower portion of the holding portion 4a and extending toward the inside. Also, the external lead-out terminal is the holding part 4
It is composed of a cutout portion 10a having a width smaller than the open portion 4d of a, a pawl 10b protruding toward the side wall, and a bent portion 10c provided at a lower portion of the cutout portion 10a and extending inward.

【0010】そして、樹脂ケース4の外壁の挾持部4a
の開放部4dに外部引き出し端子10の切欠部10aを
通し、外部引き出し端子10を下げると、支持台4bに
外部引き出し端子10の折り曲げ部10cが支持される
とともに、外部引き出し端子10のつめ10bが樹脂ケ
ース4の溝4cに係合し、図1乃至図3に示すように外
部引き出し端子10が樹脂ケース4に強固に支持され
る。
Then, a holding portion 4a on the outer wall of the resin case 4
When the cutout portion 10a of the external lead terminal 10 is passed through the open portion 4d and the external lead terminal 10 is lowered, the bent portion 10c of the external lead terminal 10 is supported by the support base 4b and the pawl 10b of the external lead terminal 10 is held. By engaging with the groove 4c of the resin case 4, the external lead-out terminal 10 is firmly supported by the resin case 4 as shown in FIGS.

【0011】一方、一面がメタライズされたセラミック
などの絶縁層6上に接着された銅回路(図示せず)の必
要な箇所に電力用半導体チップ8が半田付けされ、電力
用半導体チップ8と銅回路間にワイヤボンディングされ
スタックが形成される。
On the other hand, a power semiconductor chip 8 is soldered to a necessary portion of a copper circuit (not shown) adhered on an insulating layer 6 such as ceramic whose one surface is metallized. Wire bonding is performed between the circuits to form a stack.

【0012】そして、金属基板2の必要箇所にクリーム
半田を印刷し、さらに金属基板2の周縁をシリコンゴム
等の接着材を塗布する。このクリーム半田上に、上述し
たスタックの他、表面実装部品の抵抗、半導体素子等の
制御部品及び制御回路との接続用の接続ピン12並び接
着材上に上述した外部引き出し端子が支持された樹脂ケ
ースを載置し、リフロー炉で半田付け及び接着を行う。
なお、外部引き出し端子も銅回路に同時に半田付けされ
る。
Then, cream solder is printed on a required portion of the metal substrate 2, and an adhesive such as silicon rubber is applied to the periphery of the metal substrate 2. On this cream solder, in addition to the above-mentioned stack, the resistance of surface-mounted components, the connection pins 12 for connecting to control components such as semiconductor elements and control circuits, and the resin on which the above-mentioned external lead terminals are supported on the adhesive material Place the case and solder and bond in a reflow oven.
The external lead terminal is also soldered to the copper circuit at the same time.

【0013】そして、ケース4の上部からシリコンゴム
を充填し、120〜150℃で加熱硬化して、シリコン
ゴム層26を形成する。ついで、シリコンゴム層26の
上部にエポキシ樹脂を充填し、120〜150℃で加熱
硬化してエポキシ樹脂層28を形成する。さらに別途電
力用半導体チップを制御する制御部品を搭載したプリン
ト回路14をその内部に設けた穴(図示せず)を樹脂ケ
ース4から張り出したプリント回路取付突起(図示せ
ず)に係合し、接続ピン12をプリント回路に接続し、
半田付けを行う。そして、ケース上部からエポキシ樹脂
を充填し、加熱硬化させ上部のエポキシ樹脂層30を形
成し、電力用半導体モジュールを得る。
Then, silicone rubber is filled from the upper part of the case 4 and heated and cured at 120 to 150 ° C. to form the silicone rubber layer 26. Then, an epoxy resin is filled in the upper part of the silicone rubber layer 26 and is heated and cured at 120 to 150 ° C. to form an epoxy resin layer 28. Further, a hole (not shown) having a printed circuit 14 on which a control component for separately controlling the power semiconductor chip is mounted is engaged with a printed circuit mounting protrusion (not shown) protruding from the resin case 4, Connect the connection pin 12 to the printed circuit,
Solder. Then, an epoxy resin is filled in from the upper part of the case and cured by heating to form the upper epoxy resin layer 30 to obtain a power semiconductor module.

【0014】上記実施例では図1乃至図3で示すように
外部引き出し端子に上部が開放したつめを設けていた
が、上部が開放されない凸跡のような突部を設けてもよ
い。また、上記実施例では、電力用半導体チップをシリ
コンゴム層26及びエポキシ樹脂層28によりモールド
されているが、エポキシ樹脂層のみでモールドしてもよ
い。
In the above embodiment, as shown in FIGS. 1 to 3, the external lead-out terminal is provided with the claw whose upper part is opened, but it is also possible to provide a projecting part such as a convex mark whose upper part is not opened. Further, in the above embodiment, the power semiconductor chip is molded by the silicone rubber layer 26 and the epoxy resin layer 28, but it may be molded only by the epoxy resin layer.

【0015】[0015]

【発明の効果】以上のように、本発明によれば樹脂ケー
スに外部引き出し端子を挾持する挾持部を設け、この挾
持部は中央が開放され、この開放部に端子の切欠部を通
して端子を挾持部内にはめ込み、端子を下げると、端子
の突部が樹脂ケースの溝と係合し、さらに端子の折り曲
げ部が樹脂ケースの支持台により支持され、端子が樹脂
ケースに簡易に強固に支持される。これにより搬送作業
時に端子がケースから外れることなく、電力用半導体モ
ジュールの製造が容易となる。
As described above, according to the present invention, the resin case is provided with the holding portion for holding the external lead-out terminal, and the holding portion is opened at the center, and the terminal is held through the cutout portion of the terminal. When the terminal is fitted inside and the terminal is lowered, the projection of the terminal engages with the groove of the resin case, and the bent part of the terminal is supported by the support base of the resin case, and the terminal is easily and firmly supported by the resin case. . This facilitates the manufacture of the power semiconductor module without the terminals coming off the case during the transfer operation.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の電力用半導体モジュールの一実施例の
樹脂ケースと外部引き出し端子との係合を説明する斜視
図である。
FIG. 1 is a perspective view illustrating the engagement between a resin case and an external lead terminal of an embodiment of a power semiconductor module of the present invention.

【図2】本発明の電力用半導体モジュールの一実施例を
示す断面図である。
FIG. 2 is a sectional view showing an embodiment of a power semiconductor module of the present invention.

【図3】図1の樹脂ケースと外部引き出し端子との固定
を説明する断面図である。
FIG. 3 is a cross-sectional view illustrating fixing of the resin case and the external lead terminal of FIG.

【図4】従来の電力用半導体モジュールの断面図であ
る。
FIG. 4 is a cross-sectional view of a conventional power semiconductor module.

【符号の説明】[Explanation of symbols]

2 金属基板 4 樹脂ケース 4a 挾持部 4b 支持台 4c 溝 4d 開放部 6 絶縁板 8 電力用半導体チップ 10 外部引き出し端子 10a 切欠部 10b つめ 10c 折り曲げ部 12 接続ピン 14 プリント回路 26 シリコンゴム層 28,30 エポキシ樹脂層 2 Metal substrate 4 Resin case 4a Holding part 4b Supporting base 4c Groove 4d Opening part 6 Insulating plate 8 Power semiconductor chip 10 External lead terminal 10a Notch part 10b Pawl 10c Bending part 12 Connection pin 14 Printed circuit 26 Silicon rubber layer 28, 30 Epoxy resin layer

───────────────────────────────────────────────────── フロントページの続き (72)発明者 船本 英幸 大阪府大阪市東淀川区淡路2丁目14番3号 株式会社三社電機製作所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hideyuki Funamoto 2-3-14 Awaji, Higashiyodogawa-ku, Osaka-shi, Osaka Inside Sansha Electric Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 銅回路が配置された絶縁板を有する金属
基板と、上記銅回路上に載置固定される電力用半導体チ
ップと、一方端がケース上部外方に引き出され他方端が
上記銅回路に接続される外部引き出し端子とが上部に開
口部を有する樹脂ケースで覆いケース内を樹脂封止され
る半導体モジュールにおいて、上記樹脂ケースの側壁
が、内部に向かって伸び、中央に開放部を有する挾持部
と、上記挾持部に囲まれ側壁に設けられた溝と、上記挾
持部の下部に設けられ内部に向かって伸びる支持台とに
より構成され、かつ上記外部引き出し端子が、上記挾持
部の開放部より小さい幅の切欠部と、上記側壁側に向か
って突出する突部と、上記切欠部の下部に設けられ内部
に向かって伸びる折り曲げ部とにより構成されたことを
特徴とする電力半導体モジュール。
1. A metal substrate having an insulating plate on which a copper circuit is arranged, a power semiconductor chip mounted and fixed on the copper circuit, one end of which is pulled out of the upper part of the case and the other end of which is the copper. In a semiconductor module in which an external lead terminal connected to a circuit is covered with a resin case having an opening at the top and the inside of the case is resin-sealed, the side wall of the resin case extends toward the inside and has an opening at the center. The holding portion having, a groove provided in the side wall surrounded by the holding portion, and a support base provided in the lower portion of the holding portion and extending toward the inside, and the external lead terminal, the external lead terminal of the holding portion. A power semiconductor, comprising: a notch having a width smaller than an opening, a protrusion protruding toward the side wall, and a bent part provided at a lower portion of the notch and extending inward. module.
JP32620993A 1993-11-29 1993-11-29 Power semiconductor module Expired - Lifetime JP2720008B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32620993A JP2720008B2 (en) 1993-11-29 1993-11-29 Power semiconductor module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32620993A JP2720008B2 (en) 1993-11-29 1993-11-29 Power semiconductor module

Publications (2)

Publication Number Publication Date
JPH07153906A true JPH07153906A (en) 1995-06-16
JP2720008B2 JP2720008B2 (en) 1998-02-25

Family

ID=18185222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32620993A Expired - Lifetime JP2720008B2 (en) 1993-11-29 1993-11-29 Power semiconductor module

Country Status (1)

Country Link
JP (1) JP2720008B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001196531A (en) * 2000-01-11 2001-07-19 Sansha Electric Mfg Co Ltd Electric power semiconductor module
EP1355351A1 (en) * 2001-01-23 2003-10-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
EP1429385A1 (en) * 2002-12-14 2004-06-16 Semikron Elektronik GmbH Patentabteilung Housing for power semiconductor modules
DE19719703C5 (en) * 1997-05-09 2005-11-17 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Power semiconductor module with ceramic substrate
JP2008153368A (en) * 2006-12-15 2008-07-03 Mitsubishi Electric Corp Semiconductor device
US7541670B2 (en) 2006-06-29 2009-06-02 Mitsubishi Electric Corporation Semiconductor device having terminals
WO2013047101A1 (en) 2011-09-28 2013-04-04 富士電機株式会社 Semiconductor device and method for producing semiconductor device
JP2017126682A (en) * 2016-01-15 2017-07-20 京セラ株式会社 Semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19719703C5 (en) * 1997-05-09 2005-11-17 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Power semiconductor module with ceramic substrate
JP2001196531A (en) * 2000-01-11 2001-07-19 Sansha Electric Mfg Co Ltd Electric power semiconductor module
EP1355351A1 (en) * 2001-01-23 2003-10-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
EP1355351A4 (en) * 2001-01-23 2009-08-19 Mitsubishi Electric Corp Semiconductor device
EP1429385A1 (en) * 2002-12-14 2004-06-16 Semikron Elektronik GmbH Patentabteilung Housing for power semiconductor modules
US7242584B2 (en) * 2002-12-14 2007-07-10 Semikron Elekronik Gmbh & Co. Kg Housing for power semiconductor modules
US7541670B2 (en) 2006-06-29 2009-06-02 Mitsubishi Electric Corporation Semiconductor device having terminals
DE102007012818B4 (en) * 2006-06-29 2012-08-16 Mitsubishi Electric Corp. Semiconductor device with connections
JP2008153368A (en) * 2006-12-15 2008-07-03 Mitsubishi Electric Corp Semiconductor device
WO2013047101A1 (en) 2011-09-28 2013-04-04 富士電機株式会社 Semiconductor device and method for producing semiconductor device
US9171768B2 (en) 2011-09-28 2015-10-27 Fuji Electric Co., Ltd. Semiconductor device
JP2017126682A (en) * 2016-01-15 2017-07-20 京セラ株式会社 Semiconductor device

Also Published As

Publication number Publication date
JP2720008B2 (en) 1998-02-25

Similar Documents

Publication Publication Date Title
JP2956363B2 (en) Power semiconductor device
JP2720009B2 (en) Power semiconductor module
JP2002076252A (en) Semiconductor device
JPH1012812A (en) Power semiconductor device
JP2720008B2 (en) Power semiconductor module
JPS62202548A (en) Semiconductor device
EP0272390A2 (en) Packages for a semiconductor device
GB2174543A (en) Improved packaging of semiconductor devices
JPH0582713A (en) Multi-chip module and manufacture thereof
KR101008534B1 (en) Power semiconductor mudule package and method for fabricating the same
JP2001024143A (en) Composite semiconductor device
JP3156630B2 (en) Power circuit mounting unit
JPH08204120A (en) Semiconductor module for power
JPH08340164A (en) Surface mounting structure of bga type package
JP2000323646A (en) Insulating material case and semiconductor device
JP2515693Y2 (en) Semiconductor module
JP2539143Y2 (en) Semiconductor module
JPH042478Y2 (en)
JPH04262376A (en) Hybrid integrated circuit device
JPH0515450U (en) Power semiconductor module
JPH11204907A (en) Electronic device and its manufacture
JPS58210686A (en) Electronic circuit device
JP2715957B2 (en) Hybrid integrated circuit device
JP2771575B2 (en) Hybrid integrated circuit
KR100609760B1 (en) Multi-Layer Ceramic Semiconductor Device and Method thereof