JPH0714759A - Destaticizing method for semiconductor device - Google Patents

Abstract

PURPOSE:To facilitate destaticizing by heating a charged semiconductor device, varying the ambient humidity with respect to that of the charged semiconductor device, or feeding a volatile fluid to the charged semiconductor. CONSTITUTION:A transferred semiconductor device 1 is swept lightly by means of a soot sweeping brush in a laser marking machine and charged. The charged semiconductor device 1 is transferred into a decharging section 4. A low humidity high temperature atmosphere of 150 deg.C or above is kept in the destaticizing section 4 and the charged semiconductor 1 is placed therein for 5min, or a natural pressure high humidity atmosphere of 95%RH is kept in the destaticizing section 4 and the charged semiconductor device 1 is placed therein for 5min thus destaticizing the device 1. The charged semiconductor device 1 is further destaticized by spraying a volatile liquid when the device 1 passes through the destaticizing section 4. Consequently, the semiconductor device can be destaticized by mean of a simple and inexpensive apparatus.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for removing static electricity charged in a semiconductor device.

[0002]

2. Description of the Related Art Since a product defect due to static electricity occurs in a semiconductor device manufacturing process, a high degree of temperature / humidity control or an ion blower is installed in the process.

Further, as a static eliminator for removing static electricity, a voltage application type static eliminator, a self-discharge type static eliminator, a radiation type static eliminator and the like are used.

[0004]

The present inventor has found the following problems as a result of examining the above-mentioned prior art.

That is, it is difficult to prevent the generation of static electricity in the device carrying section by controlling the temperature and humidity in the semiconductor manufacturing process according to the above conventional technique. In addition, it is expensive to use a static eliminator such as an ion blower for removing static electricity.

An object of the present invention is to provide a static elimination technique capable of eliminating static electricity of a charged semiconductor device.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0008]

The outline of the representative ones of the inventions disclosed by the present application will be briefly described as follows.

That is, the method of removing static electricity from a semiconductor device according to the present invention heats the charged semiconductor device.

Further, in the method of static elimination of a semiconductor device according to the present invention, the ambient humidity is changed with respect to the humidity of the charged semiconductor device.

Further, in the method of static elimination of a semiconductor device according to the present invention, a volatile fluid is applied to the charged semiconductor device.

[0012]

According to the above-mentioned means, by heating the charged semiconductor device, the ambient temperature of the charged object is changed with respect to the temperature of the charged object. Therefore, static electricity can be removed by this temperature change. It was Further, since the water content is evaporated by heating, it is considered that the electricity is removed at that time.

Further, the static electricity could be removed by changing the ambient humidity of the charged semiconductor device.

Since a volatile fluid is applied to the charged semiconductor device, the static electricity can be removed by volatilizing the fluid.

[0015]

Embodiments of the present invention will now be described in detail with reference to the drawings.

FIG. 1 is a schematic configuration diagram for explaining an embodiment of a method for eliminating static electricity from a semiconductor device according to the present invention.

In FIG. 1, reference numeral 2 is a device carrying section for carrying the semiconductor device 1. Semiconductor device 1 that has been transported
Is lightly rubbed by the soot-removing brush 3 of the laser mark machine in order to adhere to the surface thereof and to remove the dust.
At that time, the semiconductor device is charged. The charged semiconductor device is transported into the static electricity removing unit 4.

(Embodiment 1) The inside of the static electricity removing section 4 is heated to 150 ° C.
The static electricity was removed by keeping the charged semiconductor device 1 in this atmosphere for 5 minutes while maintaining the high temperature and low humidity.

(Embodiment 2) Static electricity is removed by keeping the inside of the static electricity removing section 4 at a high humidity of 95% RH under atmospheric pressure in a natural state and placing the charged semiconductor device in this atmosphere for 5 minutes. Was done.

This is because the spontaneous discharge of static electricity is accelerated by changing the temperature and humidity of the semiconductor device.

(Embodiment 3) Further, when the charged semiconductor device passed through the static electricity removing portion 4, the static electricity was removed by passing it through a shower of a volatile liquid such as meteranol.

In the process of manufacturing a semiconductor device, the semiconductor device being manufactured may be charged when passing through processes such as a lead cutting machine, a marking machine, a laser marking machine, and an appearance inspection machine. Therefore, the static electricity removing unit 4 is arranged after such a process.

Although the present invention has been specifically described based on the embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Absent.

[0024]

The effects obtained by the representative one of the inventions disclosed in the present application will be described as follows.

That is, the static electricity charged in the semiconductor device can be easily removed with a simpler and cheaper device than the device such as the ion blower.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram for explaining an embodiment of a method for neutralizing a semiconductor device according to the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... conveyance part, 3 ... soot removal brush, 4
… Static electricity removal unit.

Claims (3)

[Claims] 1. A method of removing static electricity from a semiconductor device, which comprises heating the charged semiconductor device in a method of removing static electricity from the semiconductor device. 2. A method of removing static electricity from a semiconductor device, wherein the ambient humidity is changed with respect to the humidity of the charged semiconductor device. 3. A method of removing static electricity from a semiconductor device, wherein a volatile fluid is applied to the charged semiconductor device.