JPH07147402A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To provide a manufacture of a semiconductor device which can increase the thermal stability of a silicide film by removing a metal of a high melting point /the oxide film of an Si boundary without damaging them and improving controllability of high-melting-point metal silicide (Ti silicide)/Si to reduce a junction leakage and to make feasible the formation of shallow junction. CONSTITUTION:This relates to the manufacture of a semiconductor device which has a high-melting-point metal silicide film on the impurity diffusion layer of a silicon substrate. A Ti film is formed on an active region with a gate 23 formed and then heat treatment is applied thereto to form a Ti silicide (Ti Si2) film 24, and a polycrystalline silicon film 25 is selectively formed on the Ti silicide film 24 and then the ion implantation of impurities into the polycrystalline film 25 is performed with the flying distance being matched and then heat treatment is performed in a gas including impurities of the same type of the foregoing impurities to form an impurity diffusion layer 26.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device having a salicide structure having a silicide layer on the surface of an impurity diffusion layer.

[0002]

2. Description of the Related Art In a conventional semiconductor device containing silicon (Si) as a main component, the electrical resistance (sheet resistance) in the direction along the surface of an impurity diffusion layer has become higher with the miniaturization of semiconductor elements. It was This sheet resistance can be lowered by forming a Ti silicide (TiSi ₂ ) film which is a compound of Ti and Si on the surface of the impurity diffusion layer.

An example of application of the semiconductor device having this structure is a salicide structure in which a Ti silicide film is formed on the impurity diffusion layer region and the gate region in a self-aligned manner. A first prior art method of manufacturing a semiconductor device will be described with reference to FIG. (1) First, as shown in FIG. 2A, an element isolation region formed of an insulating film 2 is formed in a semiconductor substrate 1, a gate 3 is formed in an active region, and a diffusion layer region 4 in which impurities are diffused is formed. Form.

(2) Next, as shown in FIG. 2B, a Ti metal film 5 is formed on the entire surface of the semiconductor substrate. (3) Thereafter, this semiconductor substrate is subjected to a short-time heat treatment with a halogen lamp in N ₂ gas in two steps. This is a heat treatment method used to prevent the formation of a Ti silicide film in a portion other than a predetermined region for the purpose of forming a Ti silicide film in the impurity diffusion layer region 4 in a self-aligned manner.

According to this method, the Ti film is first exposed to 725
Unreacted Ti and TiN remaining on the insulating film other than the impurity diffusion layer region 4 and the gate 3 by heat treatment at 30 ° C. for 30 seconds.
Is removed by immersing it in ammonia-hydrogen peroxide for 25 minutes, and the Ti silicide film 6 is left on the impurity diffusion layer region 4 as shown in FIG. After that, the second heat treatment 825
The Ti silicide film formed by the first heat treatment becomes a stable film by being applied at 30 ° C. for 30 seconds.

In the semiconductor device containing Si as the main component, in order to reduce the electric resistance (sheet resistance) in the direction along the surface of the impurity diffusion layer, low resistance Ti is used.
A structure in which a silicide film is formed on the surface of the impurity diffusion layer is effective. Next, a second prior art method of manufacturing a semiconductor device will be described with reference to FIG.

(1) First, as shown in FIG.
An element isolation region is formed by the insulating film 12 on the semiconductor substrate 11 containing i as a main component. (2) Next, as shown in FIG. 3B, after forming an impurity diffusion layer region 13 in which impurities are diffused in a portion other than the element isolation region, a Ti metal film is formed on the entire surface of the semiconductor substrate. . At this time, in the impurity diffusion layer region 13, Ti
As shown in FIG. 3C, the surface of the semiconductor substrate is reverse-sputtered with Ar ions to remove the natural oxide film 14 which interferes with the reaction between Si and Si.
As shown in (d), Ti15 is formed.

After that, this semiconductor substrate is heat-treated in N ₂ gas for a short time to react Si and Ti on the impurity diffusion layer to form a Ti silicide film and on the other element isolation insulating films. Ti does not silicify and remains unreacted or reacts with N ₂ to form TiN. After that, as shown in FIG. 3E, unreacted Ti on the insulating film is removed.
And TiN are selectively etched with ammonia / hydrogen peroxide so that only the Ti silicide film 16 remains.

Next, in order to make the Ti silicide film 16 more stable, heat treatment was applied in a short time.

[0010]

However, in the above-mentioned first prior art, the Ti silicide film is formed in a self-aligning manner after the source / drain regions are formed in the active region. Due to
The silicidation is promoted, impurities near the TiSi ₂ / Si interface are absorbed, and a Ti compound is formed at the TiSi ₂ / Si interface, and the Ti silicidation is suppressed, resulting in an increase in resistance.

In this case, the impurities are absorbed by TiSi
_This causes a decrease in the impurity concentration near the ₂ / Si interface, making it difficult to make ohmic contact. Also, LD
In the D structure, the gate-source breakdown voltage deteriorates due to the decrease in the impurity concentration of the n ⁻ layer. In addition, the decrease in the impurity concentration causes an increase in the width of the depletion layer at the TiSi ₂ / Si interface,
Defects such as Si vacancies generated by Si diffusion during the formation of silicide near the interface are introduced into the depletion layer, which causes an increase in junction leak current.

In addition to this, the salicide structure has a drawback that HF treatment cannot be performed. That is, considering the compatibility with the MOS device manufacturing process, it is desirable that the HF treatment be possible because the HF treatment is indispensable for the cleaning step. However, since Ti silicide is easily dissolved in HF, There is a problem that it cannot be washed because it requires processing.

Further, TiSi ₂ is easily oxidized, and a natural oxide film or an oxide film formed by a heat treatment in a later step is easily formed on the surface of Ti silicide, and ohmic contact is difficult to take. Further, TiSi ₂ has a poor heat resistance and causes an increase in resistance in the MOS device manufacturing process involving high temperature heat treatment. This is reportedly due to the effect of stress from the upper interlayer film.

In addition, if the source / drain regions are formed first, the junction becomes deeper due to the heat treatment that follows, and if a Ti silicide film is formed on the formed impurity diffusion layer, TiSi ₂ / Si is formed. There is a problem that the shape of the interface becomes uneven, the junction depth xj changes depending on the location, and it becomes difficult to form a shallow junction. Further, in the above-mentioned second prior art, when the Ti silicide film is formed, the Si
Since the natural oxide film formed on the surface of the substrate is reverse-sputtered with Ar ions, oxygen is knocked on or Ar particles are implanted into the semiconductor substrate, which causes damage. Further, since the natural oxide film cannot be completely removed, if Ti is deposited on the native oxide film and heat treatment is performed, the Ti silicide / Si interface becomes uneven and the reaction becomes nonuniform.

As a result of such a shape of the interface, as shown in FIG. 4, the junction depth xj is xj ₁ , xj ₂ depending on the location.
However, this causes an increase in junction leak. This makes it difficult to stably form a shallow junction. Further, as a result of the non-uniform reaction, the stability of the silicide film with respect to the heat treatment after the formation of the silicide is deteriorated, the phenomenon of aggregation of the silicide film easily occurs, and the problem of an increase in sheet resistance occurs. Aggregation is more likely to occur as the thickness of the Ti silicide film is smaller, so that the thinning of the Ti silicide film is a problem.

According to the present invention, in a method of manufacturing a salicide structure semiconductor device using a reactive type silicide, the Si substrate is not damaged, and the controllability of the refractory metal silicide (Ti silicide) / Si interface is improved. It is an object of the present invention to provide a method for manufacturing a semiconductor device that can reduce junction leakage, enable shallow junction formation, and improve the thermal stability of a silicide film.

More specifically, a decrease in impurity concentration at the TiSi ₂ / Si interface, compound formation, increase in junction leak, and HF.
In order to eliminate the problems that treatment is not possible, the poor heat resistance of Ti silicide, and the difficulty of forming a shallow junction, polycrystalline Si is deposited on the Ti silicide film and Impurities are ion-implanted and diffused by heat treatment to form source / drain regions, thereby preventing a decrease in the concentration of the TiSi ₂ / Si interface, and making ohmic contact with the metal.
₂ is formed uniformly, prevents deterioration of breakdown voltage between the gate and source, prevents increase of junction leak current, enables cleaning with HF, and improves the heat resistance of TiSi ₂ to stably form a shallow junction. A method for manufacturing a semiconductor device is provided.

Further, the present invention is intended to solve the above-mentioned problems of increased junction leakage due to the shape of the Ti silicide / Si interface, the difficulty of forming a shallow junction, and the problems of thermal stability. In a semiconductor device containing Si as a main component, in the step of forming the Ti silicide film on the surface of the impurity diffusion layer, the Si substrate is not damaged, the controllability of the Ti silicide / Si interface is improved, and the bonding is improved. It reduces leakage, enables shallow junction formation, and improves the thermal stability of the silicide film.

[0019]

In order to achieve the above object, the present invention provides: (A) forming a gate in a method of manufacturing a semiconductor device having a refractory metal silicide film on an impurity diffusion layer of a silicon substrate. Forming a refractory metal film on the active region, and then performing a heat treatment to form a refractory metal silicide film; and a polycrystalline silicon film is selectively formed on the refractory metal silicide film. There are provided a step of ion-implanting impurities into the crystalline silicon film with a matching distance, and a step of forming an impurity diffusion layer by heat treatment in a gas containing impurities of the same type as the impurities.

In addition, a step of selectively depositing a refractory metal film on an active region formed with a gate, a step of selectively depositing a polycrystalline silicon film on the refractory metal film, A step of performing heat treatment so as to have a structure of crystalline silicon film / refractory metal silicide / silicon; a step of ion-implanting impurities into the polycrystalline silicon film at a range distance; and impurities of the same type as the impurities. A step of forming an impurity diffusion layer by heat treatment in a gas containing the material is provided. (B) In a method of manufacturing a semiconductor device having a refractory metal silicide film on an impurity diffusion layer of a silicon substrate, a step of forming an impurity diffusion layer in an active region and a natural oxide film formed on the impurity diffusion layer are provided. After the removal, a step of forming a cleaning oxide film, a step of forming a refractory metal film on the cleaning oxide film, and a step of performing heat treatment to form a refractory metal silicide film of the refractory metal film are provided. It was done like this.

[0021]

According to the present invention, (A) polycrystalline Si is selectively deposited on the refractory metal silicide (TiSi ₂ ) film self-aligned on the source / drain and the gate, or the source is formed. / Polycrystalline Si is deposited on the refractory metal (Ti) film deposited on the drain and the gate, and heat treatment is performed so as to leave the polycrystalline Si on the top, and a refractory metal silicide (TiSi ₂ ) film is formed. Crystal Si / TiSi ₂
An impurity diffusion layer is formed by defining a range distance in the polycrystalline Si film with respect to the / Si layer, and ion-implanting the impurity, and diffusing the impurity by thermal diffusion in a gas in an atmosphere containing the impurity.

Further, (B) an impurity diffusion layer is formed in the active region, the natural oxide film formed on the impurity diffusion layer is removed, and then a cleaning oxide film is formed. Further, a refractory metal (Ti) film is formed on the cleaning oxide film, and heat treatment is performed to refractory metal silicide (T) of the refractory metal (Ti) film.
iSi ₂ ) film is formed. Therefore, in the impurity diffusion layer region of the semiconductor device, the junction depth xj does not change depending on the location, and a shallow junction can be formed.

Further, refractory metal silicide (TiS
The stress applied to the i ₂ ) film is relaxed, and the thermal stability of the refractory metal silicide (TiSi ₂ ) film is obtained.

[0024]

Embodiments of the present invention will be described below with reference to the drawings. 1A to 1D are cross-sectional views of manufacturing steps of a semiconductor device having a salicide structure according to a first embodiment of the present invention. (1) First, as shown in FIG. 1A, an element isolation region composed of a field oxide (SiO ₂ ) film 22 is formed on a Si substrate 21 by the LOCOS method, and an active region other than this element isolation region is formed. Is a gate oxide (SiO ₂ ) film 2
3a, gate electrode 23b, sidewall (SiO 2
After forming the gate 23 consisting of ₂ films) 23c, a Ti film as a refractory metal film is deposited to 100 to 1000 liters.

Then, a heat treatment is performed at 650 to 800 ° C. for 30 seconds to silicidize, and then ammonia hydrogen peroxide (NH
₄ OH: H ₂ O ₂ : H ₂ O = 1: 1: 4) to remove unreacted Ti and TiN, and then 30 at 750 to 900 ° C.
The Ti silicide film 24 is converted to disilicide (TiSi ₂ ) by heat treatment for seconds. (2) Next, as shown in FIG. 1B, a polycrystalline Si film 25 is selectively formed on the Ti silicide film 24 formed on the active region (impurity diffusion layer and gate) by 300 to 300 nm.
Deposit 500Å. The polycrystalline Si film 25 has a T
A Ti silicide film is formed by reacting with the i film 28c [see FIG. 1 (e) described later] to have a film thickness that allows ohmic contact.

(3) Next, as shown in FIG.
The acceleration voltage is 30 to 70 keV, and the dose amount is 1 to 5 × 10 ¹⁵ ion so that the range becomes within the polycrystalline Si film 25.
Impurities are ion-implanted under the condition of s / cm ² . here,
In the case of n-channel, n-type impurities such as As (arsenic)
In the case of p-channel, p-type impurities such as B (boron) are ion-implanted.

(4) Next, as shown in FIG.
In the case of a channel, heat treatment is performed in an atmosphere of a gas containing an n-type impurity [for example, P (phosphorus)] in the component, and in the case of a p-channel, heat treatment is performed in an atmosphere of a gas containing a p-type impurity in the component to form an impurity diffusion layer (source / drain). ) 26 is formed. (5) Next, an interlayer insulating film 27 is deposited on the polycrystalline Si film 25, and as shown in FIG. 1E, the interlayer insulating film 27 is etched so as to selectively leave the polycrystalline Si film 25. , A contact opening for wiring is formed, and Al28a / TiN28b / Ti28c is formed in the contact hole opening.
The wiring 28 is formed.

By the subsequent heat treatment of Al sintering, Ti
28c reacts with the polycrystalline Si film 25 to form Ti silicide 2
9 is formed, and ohmic contact is made. next,
A second embodiment of the present invention will be described with reference to FIG.
5A to 5C are sectional views of a salicide structure semiconductor device according to the second embodiment of the present invention in the manufacturing process.

(1) First, FIG. 1 of the first embodiment.
Similar to the step shown in FIG. 5A, as shown in FIG. 5A, an element isolation region made of a field oxide (SiO ₂ ) film 32 is formed on the Si substrate 31 by the LOCOS method, and the active region is formed. On the gate oxide (SiO ₂ ) film 33
a, gate electrode 33b, sidewall (SiO ₂ film)
After forming the gate 33 composed of 33c, a Ti film 34 is selectively deposited on the active region and the gate by 100 to 1000Å.

(2) Next, as shown in FIG.
A polycrystalline Si film 35 is selectively formed on the Ti film 34 by 600 to 8
00Å Accumulate. (3) Next, as shown in FIG. 5C, the polycrystalline Si film 3
5 to leave the upper part (near the surface), that is, the polycrystalline S
The conditions for the Ti silicidation annealing are 30 to 650 to 800 ° C. so that the structure of the i / TiSi ₂ / Si substrate is obtained.
Heat treatment for seconds.

(4) Next, as shown in FIG. 5 (d), the acceleration voltage is 30 to 7 so that a range distance is provided in the polycrystalline Si film.
Impurities are ion-implanted under the conditions of 0 keV and 1 to 5 × 10 ¹⁵ ions / cm ² . Here, when forming an n-channel, n-type [for example As (arsenic)] is ion-implanted, and when forming a p-channel, p-type [for example B (boron)] is ion-implanted.

(5) Then, as in the first embodiment, FIG.
As shown in (e), heat treatment is performed in an atmosphere containing an n-type impurity [eg, P (phosphorus)] as a component in the case of an n-channel and in an atmosphere containing a p-type impurity in the case of a p-channel to remove impurities. An impurity diffusion layer (source / drain) 36 is formed by thermal diffusion in the Si substrate. (6) Next, an interlayer insulating film 37 is formed on the polycrystalline Si film 35, and a heat treatment for flattening the interlayer insulating film 37 is performed. As shown in FIG. The interlayer insulating film 37 is etched so as to selectively leave the film, and a contact opening for wiring is formed, and Al38a / TiN38b / Ti38c is formed in the contact hole opening.
The wiring 38 is formed.

By the subsequent heat treatment of Al sintering, Ti
38c reacts with the polycrystalline Si film 35 to form Ti silicide 3
9 is formed, and ohmic contact is made. As described above, the case where the polycrystalline Si film is deposited on the Ti film and the Ti silicide film is formed is more Si than the case where the polycrystalline Si film is deposited on the Ti silicide film of the first embodiment. Since the damage due to the substrate consumption is small and the sinking of the TiSi ₂ / Si interface is small, the shallower junction in the second embodiment is obtained when compared with the same Ti silicide film thickness and the same thermal diffusion processing conditions. Can be formed.

In the above embodiments, the case of the single drain structure has been described, but the LDD and DDD structures can be formed by the same manufacturing method. Next, a third embodiment of the present invention will be described with reference to FIG. 6A to 6C are sectional views of a semiconductor device having a salicide structure according to a third embodiment of the present invention in the manufacturing process.

(1) First, as shown in FIG.
An element isolation region made of a field oxide (SiO ₂ ) film 42 for element isolation is formed on the i substrate 41, and an impurity diffusion layer 43 is formed in the active region other than the element isolation region as in the prior art. . At this time, the impurity diffusion layer 4
A native oxide film 44 is formed on the surface 3. (2) Next, in order to remove the natural oxide film 44 formed on the impurity diffusion layer 43, normal cleaning, for example, sulfuric acid / hydrogen peroxide (H ₂ SO ₄ + H ₂ O ₂ + H ₂ O = 1: 1: 1: According to 4), the substrate surface is washed, soaked in a 5% HF solution for 30 seconds to remove the natural oxide film 44 on the surface of the impurity diffusion layer 43, and further soaked in sulfuric acid-hydrogen peroxide mixture for 10 minutes. As shown in b), the cleaning oxide film 44a is formed in the impurity diffusion layer region by 10Å
Grow to a degree.

(3) Next, as shown in FIG. 6C, a Ti film 45 is sputtered on the substrate by 100 to 1000 Å. (4) Next, the first time of the Ti silicidation heat treatment is performed by a halogen lamp for a short time heat treatment at 600 to 700 ° C. for 30 seconds, and the unreacted Ti remaining in the region other than the impurity diffusion layer region is
After removing TiN and TiN by immersing them in ammonia-hydrogen peroxide for 25 minutes, as shown in FIG.
The second heat treatment for stabilizing the i-silicide film 46 is performed by a halogen lamp at 700 to 900 ° C. for a short time of 30 seconds.

At this time, unlike the case of forming by the conventional method,
Since the cleaning oxide film 44a is uniformly formed, the Ti silicide film 46 can be uniformly formed, the junction depth becomes constant regardless of the location, and the junction leak can be reduced. Further, the Ti silicide film 46 itself can also be stabilized against heat. In the above embodiment, chemicals, that is, sulfuric acid / hydrogen peroxide is used for removing the natural oxide film and forming the cleaning oxide film, but O ₃ pure water can be used for forming the cleaning oxide film.

As described above, when O ₃ pure water is used, the quality of the cleaned oxide film is better and no chemicals are used.
AT (turnaround time), that is, the effect of reducing the time required for the process and reducing the cost can be expected. next,
A fourth embodiment of the present invention will be described with reference to FIG. (1) First, as shown in FIG. 7A, an element isolation region made of a field oxide film 52 for element isolation is formed on a Si substrate 51, and a gate is formed in an active region other than this element isolation region. After the gate 53 including the oxide (SiO ₂ ) film 53a, the gate electrode 53b, and the sidewall (SiO ₂ film) 53c is formed, the impurity diffusion layer (source.
A drain) 54 is formed. Incidentally, 55 is a natural oxide film.

(2) Next, in order to remove the natural oxide film 55 formed on the impurity diffusion layer 54, normal cleaning,
For example, sulfuric acid / hydrogen peroxide (H ₂ SO ₄ + H ₂ O ₂ + H ₂ O =
1: 1: 4), the surface of the substrate is washed, immersed in a 5% HF solution for 30 seconds to remove the natural oxide film 55 on the surface of the impurity diffusion layer 54, and further immersed in sulfuric acid / hydrogen peroxide solution for 10 minutes. , Fig. 7
As shown in (b), the cleaning oxide (SiO ₂ ) film 56 is
About 10Å is grown on the impurity diffusion layer 54 and the gate electrode 53b.

(3) Next, as shown in FIG. 7C, a Ti film 57 is sputtered on the substrate by 100 to 1000 Å. (4) After that, a first heat treatment for Ti silicidation is performed by a halogen lamp at 600 to 700 ° C. for a short time of 30 seconds, and unreacted Ti remaining on the impurity diffusion layer 54 and other than the gate electrode 53b. And TiN are soaked in ammonia-hydrogen peroxide for 25 minutes to remove them, and then a second heat treatment for stabilizing the Ti silicide film 58 on the impurity diffusion layer 54 and the gate electrode 53b is performed as shown in FIG. 7D. Is subjected to a short-time heat treatment at 700 to 900 ° C. for 30 seconds with a halogen lamp.

At this time, unlike the case of forming by the conventional method,
Since the cleaning oxide film 56 is formed uniformly, the Ti silicide film 58 can be formed uniformly, the junction depth becomes constant regardless of the location, and the junction leak can be reduced. Further, the Ti silicide film 58 itself can also be stabilized against heat. Although only Ti silicide is shown in the above embodiment, the present invention can be applied to other refractory metals such as W silicide, Co silicide, Ni silicide, Mo silicide, and Ta silicide.

The present invention is not limited to the above embodiments, but various modifications can be made within the scope of the present invention, and these modifications are not excluded from the scope of the present invention.

[0043]

As described above in detail, according to the present invention, a shallow junction can be formed in the impurity diffusion layer region of the semiconductor device without changing the junction depth xj depending on the location. . In addition, refractory metal silicide (Ti
The stress applied to the Si ₂ ) film is relaxed, and the thermal stability of the refractory metal silicide (TiSi ₂ ) film is obtained.

More specifically, according to the first and second embodiments of the present invention, (1) precipitates (for example, TiAs or p channel in n channel) on the refractory metal silicide (TiSi ₂ ) / Si interface. TiB ₂ ) is not formed, and the increase in resistance can be suppressed. (2) The concentration decrease due to the absorption just below the refractory metal silicide (TiSi ₂ ) is eliminated, and the impurity diffusion layer (n
^- it can be eliminated density reduction of the layer). In addition, deterioration in breakdown voltage between the gate and the source can be eliminated. Furthermore, it is possible to suppress the extension of the depletion layer near the Si surface and prevent an increase in junction leakage current.

(3) In the cleaning step, the HF treatment is possible even after the formation of the refractory metal silicide (TiSi ₂ ). (4) Oxidation of the refractory metal silicide (TiSi ₂ ) film surface can be prevented, and ohmic contact formation becomes easy. According to the third and fourth embodiments of the present invention,
Refractory metal silicide (TiSi
Unlike ₂ ), a cleaning oxide film is uniformly formed on the impurity diffusion layer and can be flattened without damaging the Ti silicide / Si substrate, and the Ti silicide film is uniformly formed. be able to.

Therefore, since the surface of the impurity diffusion layer of the semiconductor device has few irregularities, the junction depth becomes constant irrespective of the location, and the junction leak can be reduced and the shallow junction can be formed. Further, the refractory metal silicide film itself can be thermally stable, and the refractory metal silicide (Ti silicide) film can be thinned.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of manufacturing steps of a semiconductor device having a salicide structure according to a first embodiment of the present invention.

FIG. 2 is a sectional view of a manufacturing process of a conventional semiconductor device having a first salicide structure.

FIG. 3 is a sectional view of a manufacturing process of a conventional semiconductor device having a second salicide structure.

FIG. 4 is an enlarged cross-sectional view illustrating a problem of a conventional semiconductor device having a second salicide structure.

FIG. 5 is a sectional view of a semiconductor device having a salicide structure in a manufacturing process according to a second embodiment of the present invention.

FIG. 6 is a sectional view of a semiconductor device having a salicide structure in a manufacturing process according to a third embodiment of the present invention.

FIG. 7 is a sectional view of a semiconductor device having a salicide structure in a manufacturing process according to a fourth embodiment of the present invention.

[Explanation of symbols]

21, 31, 41, 51 Si substrate 22, 32, 42, 52 Field oxide film 23, 33, 53 Gate 23a, 33a, 53a Gate oxide (SiO ₂ ) film 23b, 33b, 53b Gate electrode 23c, 33c, 53c Side Wall 24, 46, 58 Ti silicide film 25, 35 Polycrystalline Si film 26, 36, 43, 54 Impurity diffusion layer 27, 37 Interlayer insulating film 28, 38 Wiring 28a, 38a Al 28b, 38b TiN 28c, 38c Ti 29, 39 Ti silicide 34, 45, 57 Ti film 44, 55 Natural oxide film 44a, 56 Cleaning oxide film

Continuation of front page (51) Int.Cl. ⁶ Identification number Office reference number FI technical display location H01L 21/28 301 T 7376-4M

Claims (8)

[Claims] 1. A method of manufacturing a semiconductor device having a refractory metal silicide film on an impurity diffusion layer of a silicon substrate, comprising: (a) forming a refractory metal film on an active region formed with a gate and then performing heat treatment. And (b) a polycrystalline silicon film is selectively formed on the refractory metal silicide film and impurities are distributed in the polycrystalline silicon film at a range. A method of manufacturing a semiconductor device, comprising: performing an ion implantation step; and (c) performing a heat treatment in a gas containing an impurity of the same type as the impurity to form an impurity diffusion layer. 2. In a method of manufacturing a semiconductor device having a refractory metal silicide film on an impurity diffusion layer of a silicon substrate, (a) a refractory metal film is selectively deposited on an active region formed with a gate. And (b) a step of selectively depositing a polycrystalline silicon film on the refractory metal film, and (c) a heat treatment so that the polycrystalline silicon film / refractory metal silicide / silicon structure is obtained. Process,
(D) a step of ion-implanting impurities into the polycrystalline silicon film so as to match the range distance; and (e) a step of performing heat treatment in a gas containing impurities of the same type as the impurities to form an impurity diffusion layer. A method of manufacturing a semiconductor device, comprising: 3. A method of manufacturing a semiconductor device having a refractory metal silicide film on an impurity diffusion layer of a silicon substrate, the method comprising: (a) forming an impurity diffusion layer in an active region; and (b) forming the impurity diffusion layer on the impurity diffusion layer. Removing the natural oxide film formed on the substrate, forming a cleaning oxide film, (c) forming a refractory metal film on the cleaning oxide film, and (d)
And a step of forming a refractory metal silicide film of the refractory metal film by performing a heat treatment. 4. A method of manufacturing a semiconductor device according to claim 3, wherein the active region has a gate. 5. The method for manufacturing a semiconductor device according to claim 1, wherein the refractory metal film is Ti. 6. The method of manufacturing a semiconductor device according to claim 3, wherein the natural oxide film is removed by cleaning and HF treatment. 7. The method of manufacturing a semiconductor device according to claim 3, wherein the cleaning oxide film is formed by using a chemical solution of sulfuric acid / hydrogen peroxide, hydrochloric acid / hydrogen peroxide, HF / hydrogen peroxide, or ammonia / hydrogen peroxide. 8. The method of manufacturing a semiconductor device according to claim ₃ , wherein the cleaning oxide film is formed by using O ₃ pure water.