JPH07145498A - Surface treatment of metallic material for semiconductor producing device - Google Patents

Surface treatment of metallic material for semiconductor producing device

Info

Publication number
JPH07145498A
JPH07145498A JP31784893A JP31784893A JPH07145498A JP H07145498 A JPH07145498 A JP H07145498A JP 31784893 A JP31784893 A JP 31784893A JP 31784893 A JP31784893 A JP 31784893A JP H07145498 A JPH07145498 A JP H07145498A
Authority
JP
Japan
Prior art keywords
layer
corrosion resistance
oxide
metallic
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP31784893A
Other languages
Japanese (ja)
Inventor
Ikuo Hashimoto
郁郎 橋本
Atsushi Hisamoto
淳 久本
Tsugumoto Ikeda
貢基 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to JP31784893A priority Critical patent/JPH07145498A/en
Priority to DE4432013A priority patent/DE4432013A1/en
Priority to SE9403108A priority patent/SE9403108A0/en
Publication of JPH07145498A publication Critical patent/JPH07145498A/en
Withdrawn legal-status Critical Current

Links

Abstract

PURPOSE:To improve the corrosion resistance of a metallic material such as stainless steel to the corrosive gas such as gaseous halogen and especially the corrosion resistance in the environment contg. moisture and gaseous halogen. CONSTITUTION:A metallic base material is cathodized in an aq. soln. contg. chromic acid to form a metallic Cr layer and/or a Cr compd. layer on the surface of the stainless steel in 0.005-10mum thickness, then the material is heated in 10<-8>-10<0> Torr vacuum atmosphere or in the low oxygen partial pressure atmosphere with the oxygen activity equivalent to the vacuum atmosphere to form a Cr oxide layer on the surface layer of the metallic Cr layer.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体製造装置用金属
材の表面処理法に関し、殊に腐食性の強いHCl、Cl
2 、HF等のハロゲン系ガスに対しても優れた耐食性を
示す皮膜を、素地金属材の表面に形成するための表面処
理法に関するものである。尚本発明で用いる素地金属材
としては、ステンレス鋼の他、低合金鋼や炭素鋼等の鋼
材、更にはアルミニウム等が挙げられるが、以下ではス
テンレス鋼を代表的に取り上げて説明を進める。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface treatment method for metal materials for semiconductor manufacturing equipment, and particularly to HCl and Cl, which are highly corrosive.
2. The present invention relates to a surface treatment method for forming a film having excellent corrosion resistance against a halogen-based gas such as HF on the surface of a base metal material. Examples of the base metal material used in the present invention include stainless steel, steel materials such as low alloy steel and carbon steel, and also aluminum and the like. In the following, stainless steel will be taken up as a typical example for description.

【0002】[0002]

【従来の技術】近年の半導体製造技術においては素子が
高集積化し、配線間隔はサブミクロンの精度が要求され
る様になっている。その様な素子では、微粒子や細菌が
付着しただけでも回路が短絡し、製品不良が発生する恐
れがある。そのため、半導体の製造に使用されるガスや
純水は超高純度であることが要求され、ガスの場合には
導入ガス自体の高純度化だけでなく、配管或いは反応室
壁面からの水分等の不純ガスや微粒子の発生を極力低減
することが必要となる。
2. Description of the Related Art In recent semiconductor manufacturing technology, elements are highly integrated, and wiring intervals are required to have submicron accuracy. In such an element, even if particles or bacteria are attached, the circuit may be short-circuited and a product defect may occur. Therefore, it is required that the gas and pure water used for manufacturing semiconductors have an ultrahigh purity. In the case of gas, not only the highly purified introduced gas itself, but also the water content from the pipe or the reaction chamber wall surface, etc. It is necessary to reduce the generation of impure gas and fine particles as much as possible.

【0003】半導体製造装置用のガス配管には、従来よ
り溶接性や一般耐食性の面からオーステナイト系ステン
レス鋼SUS304LやSUS316Lが使用されてお
り、その表面を平滑化することにより吸着面積を減少せ
しめ、不純ガスの吸着および脱離を少なくする目的で、
電解研磨処理を施したものが用いられている。更に、電
解研磨処理の後酸化性ガス雰囲気中で加熱処理すること
によって非晶質酸化皮膜を形成し、表面のガス放出量を
低減した部材(特開昭64−87760号)、あるいは
微粒子の発生源および不純物の吸着・放出場所となる非
金属介在物量を極めて少なくさせたステンレス鋼管(特
開昭63−161145号)も提案されている。
Conventionally, austenitic stainless steels SUS304L and SUS316L have been used for gas pipes for semiconductor manufacturing equipment in terms of weldability and general corrosion resistance, and the adsorption area is reduced by smoothing the surface, For the purpose of reducing adsorption and desorption of impure gas,
What has been subjected to electrolytic polishing treatment is used. Further, after the electrolytic polishing treatment, a heat treatment is performed in an oxidizing gas atmosphere to form an amorphous oxide film to reduce the amount of gas released from the surface (Japanese Patent Laid-Open No. 64-87760), or the generation of fine particles. A stainless steel pipe (Japanese Patent Laid-Open No. 63-161145) in which the amount of non-metallic inclusions serving as a source and a place for adsorbing / releasing impurities is extremely small has also been proposed.

【0004】[0004]

【発明が解決しようとする課題】しかしながら上記ステ
ンレス鋼材は、酸素や窒素等の如く腐食性のないガスの
配管材としては優れていたものであるが、腐食性の強い
HCl、Cl2 、HF等のハロゲン系ガス中ではその表
面が腐食されるため、腐食生成物によるガスの吸着・放
出が起こりガス純度の維持が困難になる。また金属塩化
物等の腐食生成物が微粒子となって汚染の原因になる。
尚乾燥したハロゲン系ガス中では、ステンレス鋼材の腐
食は軽微であると言われているが、実際にはガス中には
わずかながらも水分が存在するので腐食は進行する。
However, the above-mentioned stainless steel material is excellent as a piping material for non-corrosive gases such as oxygen and nitrogen, but it has strong corrosive properties such as HCl, Cl 2 and HF. Since the surface is corroded in the halogen-based gas, the corrosion product causes adsorption and release of the gas, which makes it difficult to maintain the gas purity. In addition, corrosion products such as metal chlorides become fine particles and cause pollution.
It is said that the corrosion of the stainless steel material is slight in the dry halogen-based gas, but in reality, the corrosion progresses because a slight amount of water is present in the gas.

【0005】そのため、今後更に高集積化する傾向のみ
られる半導体製造分野では、これらハロゲン系ガス中で
の耐食性、特に水分とハロゲン系ガスが同時に存在する
様な環境での耐食性に優れた部材が望まれている。そこ
で、SUS304LやSUS316Lに比較して耐食性
の優れた高Ni合金(ハステロイ等)を使用することに
より腐食を低減することも可能であるが、高Ni合金は
極めて高価であるばかりでなく、腐食を完全に阻止でき
る訳ではない。
Therefore, in the field of semiconductor manufacturing, which tends to be highly integrated in the future, a member having excellent corrosion resistance in these halogen-based gases, particularly in an environment where water and halogen-based gas are present at the same time is desired. It is rare. Therefore, it is possible to reduce the corrosion by using a high Ni alloy (Hastelloy etc.) having excellent corrosion resistance as compared with SUS304L and SUS316L. However, the high Ni alloy is not only extremely expensive, but also highly corrosive. It cannot be completely stopped.

【0006】本発明はこの様な事情に着目してなされた
ものであって、その目的は、ステンレス鋼材等の金属材
のハロゲン系ガス等の腐食性ガスに対する耐食性、特に
水分とハロゲン系ガスが同時に存在する様な環境での耐
食性を向上させる表面処理法を提供しようとするもので
ある。
The present invention has been made in view of such a situation, and its object is to prevent corrosion of corrosive gases such as halogen-containing gas of metal materials such as stainless steel, especially moisture and halogen-containing gas. The present invention aims to provide a surface treatment method that improves the corrosion resistance in an environment where they are present at the same time.

【0007】[0007]

【課題を解決するための手段】上記課題を解決すること
のできた発明に係る表面処理法の構成は、素地金属材
を、クロム酸を含む水溶液中で陰極電解することによっ
て、金属材表面に0.005〜10μm厚さの金属Cr
層および/またはCr化合物層を形成した後、10-8
100 Torrの真空雰囲気下またはこの雰囲気に相当
する酸素活量の低酸素分圧雰囲気下で加熱することによ
って、前記金属Cr層内および/またはCr化合物層内
の少なくとも表層部にCr酸化物を形成するところに要
旨を有するものである。
The structure of the surface treatment method according to the present invention, which has been capable of solving the above-mentioned problems, has a method in which a base metal material is subjected to cathodic electrolysis in an aqueous solution containing chromic acid to form 0 0.005 to 10 μm thick metallic Cr
Layer and / or Cr compound layer is formed, then 10 -8 ~
By heating under 10 0 Torr vacuum atmosphere or under low oxygen partial pressure atmosphere having an oxygen activity corresponding to the atmosphere, the Cr oxide on at least a surface layer portion of the metal Cr layer and / or Cr compound layer It has a gist when it is formed.

【0008】[0008]

【作用】本発明は上記の様に構成されるが、要するにス
テンレス鋼材等の金属材のハロゲン系ガス等の腐食性ガ
スに対する耐食性を高めるには、Cr酸化物層を金属材
表面に形成させることが最も有効であるとの知見が得ら
れ、この知見に基づきその条件について更に検討したと
ころ、前述した様な構成を採用すれば希望するCr酸化
物層が形成できることを見出し、本発明を完成したもの
である。
The present invention is constructed as described above. In short, in order to improve the corrosion resistance of a metal material such as stainless steel against a corrosive gas such as a halogen-based gas, a Cr oxide layer is formed on the surface of the metal material. Was found to be the most effective, and further examination of the conditions based on this finding revealed that the desired Cr oxide layer can be formed by adopting the above-mentioned constitution, and completed the present invention. It is a thing.

【0009】本発明を実施するに先立ち、金属材の表面
は常法に従って電解研摩や機械研摩等によって研摩仕上
げされるが、このときの表面粗さはガス放出特性を考慮
してRmax で1μm以下であるのが好ましい。尚機械研
摩面は電解研摩面に比較して活性であり、ガスが吸着し
易いと一般的に言われているが、本発明においてはその
後の処理で表面にCrの酸化物層(例えば、Cr23
層)を形成するので、研摩方法の種類はガス吸着に影響
を及ぼすことはない。
Prior to carrying out the present invention, the surface of the metal material is polished and finished by electrolytic polishing, mechanical polishing or the like according to a conventional method. The surface roughness at this time is R max of 1 μm in consideration of gas release characteristics. The following is preferable. Incidentally, it is generally said that the mechanically polished surface is more active than the electrolytically polished surface and gas is easily adsorbed, but in the present invention, a Cr oxide layer (for example, Cr 2 O 3
The type of polishing method does not influence the gas adsorption because it forms a layer).

【0010】本発明においては、まず金属材表面に金属
Cr層および/またはCr化合物層(以下、これらを一
括して「Cr含有層」と呼ぶことがある)を形成するも
のであるが、その為の手段としては通常の電解めっき法
を採用すれば良く、具体的にはクロム酸を含む水溶液中
で陰極電解する。このとき形成されるCr含有層は、
0.005〜10μm厚さとする必要がある。即ちCr
含有層の厚さが0.005μm未満では、欠陥が多くな
ってその後の酸化処理によっても十分な耐食性が得られ
ず、一方10μmを超えると耐食性の点では問題はない
が、処理に時間がかかり不経済であるばかりでなく製品
の溶接性も劣化する。尚Cr含有層の好ましい厚さは、
0.05〜2μm程度である。
In the present invention, first, a metallic Cr layer and / or a Cr compound layer (hereinafter, these may be collectively referred to as "Cr-containing layer") is formed on the surface of the metallic material. A usual electrolytic plating method may be adopted as a means for this, and specifically, cathodic electrolysis is performed in an aqueous solution containing chromic acid. The Cr-containing layer formed at this time is
The thickness must be 0.005 to 10 μm. That is, Cr
If the thickness of the containing layer is less than 0.005 μm, there are many defects and sufficient corrosion resistance cannot be obtained even by the subsequent oxidation treatment. On the other hand, if it exceeds 10 μm, there is no problem in terms of corrosion resistance, but the treatment takes time. Not only is it uneconomical, but the weldability of the product deteriorates. The preferable thickness of the Cr-containing layer is
It is about 0.05 to 2 μm.

【0011】ところでCr含有層は、例えば厚さ0.1
μm以上の層を上記の方法で形成させる場合は、その大
部分が金属Crであり、一方0.1μm未満の場合に
は、Cr水酸化物またはCr酸化物が主体となることが
多い。これらの場合において、Cr含有層が、例えば金
属Cr,Cr水酸化物,Cr酸化物のいずれの状態であ
っても、後述の加熱処理を施すことによって、その表層
部はCr酸化物となり、当該Cr酸化物によって本発明
で期待する特性を得ることができる。従って、Cr含有
層における加熱処理前のCrの状態は特定されるもので
はなく、金属Crは勿論のこと、水酸化物や含水化合物
等を含むCr化合物層であっても良い。またCr含有層
には、上記以外の微量の不純物が含まれていても、その
主体が金属Crおよび/またはCr化合物であれば良
く、加熱処理後にCr酸化物層に重大な欠陥を与えるも
のでなければ、問題になるものではない。
By the way, the Cr-containing layer has, for example, a thickness of 0.1.
When a layer having a thickness of at least μm is formed by the above method, most of it is metallic Cr, while when it is less than 0.1 μm, Cr hydroxide or Cr oxide is often the main component. In these cases, even if the Cr-containing layer is in any state of, for example, metal Cr, Cr hydroxide, and Cr oxide, the surface layer becomes Cr oxide by performing the heat treatment described below, The properties expected in the present invention can be obtained by the Cr oxide. Therefore, the state of Cr in the Cr-containing layer before the heat treatment is not specified, and the Cr-containing layer may be not only metallic Cr but also a Cr compound layer containing a hydroxide, a hydrous compound or the like. Even if the Cr-containing layer contains a trace amount of impurities other than those described above, the main component thereof may be metallic Cr and / or a Cr compound and may give a serious defect to the Cr oxide layer after the heat treatment. If not, it doesn't matter.

【0012】不純物ガスの放出特性の面からすれば、表
面は金属CrやCr水酸化物系化合物よりもCr酸化物
である方が良いので、本発明ではこうした観点から、前
記Cr含有層を形成した後酸化処理を施し、該Cr含有
層の少なくとも表層部にCr酸化物を形成する。ここで
「少なくとも表層部」としたのは、Cr酸化物はCr含
有層の少なくとも表層部に形成されていればその効果を
発揮するが、Cr含有層のほぼ全体がCr酸化物になる
場合も許容する趣旨である。このときの酸化方法は、表
面の水分除去を兼ねた加熱法を採用することになるが、
このとき100Torrの真空雰囲気よりも酸素活量が
大きくなる様な雰囲気下で加熱すると、Cr含有層にピ
ンホール等の欠陥が少しでもあるとその部分にはFe酸
化物が形成されて耐食性劣化するので好ましくない。一
方、10-8Torrの真空中よりも酸素活性が小さくな
る様な雰囲気下で加熱すると、Cr含有層が酸化され
ず、本発明の目的とする良好なCr酸化物は形成されな
い。こうした理由によって、Cr酸化物を形成するとき
の加熱処理雰囲気は、「10-8〜100 Torrの真空
中またはこの雰囲気に相当する酸素活量の低酸素分圧雰
囲気」とした。この様な条件で加熱酸化することによっ
て、Cr含有層の表面に欠陥部分があっても、層中のC
rが選択酸化されて少なくとも表層部にCr酸化物が形
成されるので、表面全体を耐食性に優れた強固なCr酸
化物層で被覆することができるのである。
From the viewpoint of the emission characteristics of the impurity gas, it is better that the surface is made of Cr oxide rather than metallic Cr or Cr hydroxide compound. In the present invention, the Cr-containing layer is formed from this point of view. Then, an oxidation treatment is performed to form a Cr oxide on at least the surface layer portion of the Cr-containing layer. Here, "at least the surface layer portion" means that the Cr oxide exerts its effect if it is formed on at least the surface layer portion of the Cr-containing layer, but when almost the entire Cr-containing layer becomes the Cr oxide. It is an intent to allow it. As the oxidation method at this time, a heating method that also serves to remove water on the surface is adopted,
Upon heating under such atmosphere oxygen activity is greater than the vacuum at this time 10 0 Torr, Fe oxides are formed on the defect is even slightly when a portion thereof such as a pinhole in the Cr-containing layer corrosion It is not preferable because it deteriorates. On the other hand, when heated in an atmosphere in which oxygen activity is smaller than that in a vacuum of 10 −8 Torr, the Cr-containing layer is not oxidized, and a good Cr oxide intended by the present invention is not formed. By these reasons, the heat treatment atmosphere at the time of forming a Cr oxide was "low oxygen partial pressure atmosphere of 10 -8 to 10 0 Torr of vacuum or oxygen activity corresponding to the atmosphere." Even if there is a defect on the surface of the Cr-containing layer by heating and oxidizing under such conditions, the C
Since r is selectively oxidized to form Cr oxide in at least the surface layer portion, the entire surface can be coated with a strong Cr oxide layer having excellent corrosion resistance.

【0013】上記処理時の加熱温度については特に限定
されるものではないが、上述した雰囲気での酸素活量の
最高値は温度依存性があり、温度が高くなるほど最適酸
素活量が大きくなる傾向がある。こうしたことから適正
な加熱温度としては、温度が400〜600℃程度であ
り、その場合の真空度は10-6〜10-2Torrが好ま
しい。また加熱時間についても特に限定されないが、上
記の様な条件では30分以上で被処理可能である。
The heating temperature at the time of the above treatment is not particularly limited, but the maximum value of oxygen activity in the above-mentioned atmosphere has temperature dependence, and the optimum oxygen activity tends to increase as the temperature increases. There is. Therefore, the proper heating temperature is about 400 to 600 ° C., and the degree of vacuum in that case is preferably 10 −6 to 10 −2 Torr. Further, the heating time is not particularly limited, but under the above conditions, the treatment can be performed for 30 minutes or more.

【0014】ところで本発明におけるCr含有層が形成
されていない様な通常のステンレス鋼材であっても、上
記の様な加熱酸化処理を施せばその表面にCr酸化物層
を形成することはでき、この様なステンレス鋼材は乾燥
したハロゲン系ガスでは良好な耐食性を示すこともあ
る。しかしながら、外部環境からステンレス鋼材を完全
に遮断する様な連続したCr酸化物層の形成は困難であ
り、この処理時に素地中にCr欠乏層が形成され易くな
り、腐食性の水溶液中では上記処理によって耐食性を却
って劣化させることにもなりかねない。本発明方法にお
いては、Cr含有層が予め形成されるので加熱酸化処理
後に連続したCr酸化物層が形成され、またCr欠乏層
の形成も起こらないため、水分とハロゲン系ガスが同時
に存在する様な環境中でも優れた耐食性が発揮される。
By the way, even a normal stainless steel material in which the Cr-containing layer according to the present invention is not formed can be formed with a Cr oxide layer on its surface by the above-mentioned thermal oxidation treatment, Such a stainless steel material may show good corrosion resistance in a dry halogen gas. However, it is difficult to form a continuous Cr oxide layer that completely shields the stainless steel material from the external environment, and during this treatment, a Cr-deficient layer is likely to be formed, and the above treatment is performed in a corrosive aqueous solution. Therefore, the corrosion resistance may be deteriorated rather than deteriorated. In the method of the present invention, since the Cr-containing layer is formed in advance, a continuous Cr oxide layer is formed after the heat oxidation treatment, and the formation of a Cr-deficient layer does not occur, so that it is possible that water and a halogen-based gas are present at the same time. Excellent corrosion resistance is exhibited even in various environments.

【0015】尚以上の説明では、用いる素地金属材とし
てステンレス鋼を代表的に取り上げて説明したが、本発
明で用いることのできる素地金属材としてはこのステン
レス鋼に限らず、低合金鋼や炭素鋼等の鋼材、更にはア
ルミニウム等が挙げられることは上述した通りであり、
これらの素地金属材の用いた場合であっても、本発明の
目的が達成される。また素地金属材としてステンレス鋼
材用いる場合に、その種類(鋼種)は特に限定されるも
のではないが、半導体製造装置の素材として一般的に使
用されているSUS304やSUS316Lを用いれば
良い。
In the above description, stainless steel was representatively taken as the base metal material to be used, but the base metal material that can be used in the present invention is not limited to this stainless steel, but low alloy steel or carbon. As mentioned above, steel materials such as steel, and aluminum and the like can be mentioned,
Even if these base metal materials are used, the object of the present invention can be achieved. When stainless steel is used as the base metal material, its type (steel type) is not particularly limited, but SUS304 or SUS316L that is generally used as a material for semiconductor manufacturing equipment may be used.

【0016】以下本発明を実施例によって更に詳細に説
明するが、下記実施例は本発明を限定する性質のもので
はなく、前・後記の趣旨に徴して設計変更することはい
ずれも本発明の技術的範囲に含まれるものである。
The present invention will be described in more detail with reference to the following examples. However, the following examples are not intended to limit the present invention, and any design changes made in view of the spirit of the preceding and the following will not be considered. It is included in the technical scope.

【0017】[0017]

【実施例】【Example】

実施例1 市販のSUS316L鋼板を使用し、下記表1に示す条
件でCr含有層(金属Cr層および/またはCr水酸化
物層)形成および加熱酸化処理を施し、得られた表面処
理材の耐食性を調査した。このとき耐食性は、水分と塩
素系のガスが共存する条件を模擬して30℃の3%Na
Cl水溶液による腐食試験で評価した。その結果を、表
1に併記する。尚表1中の耐食性の評価基準は下記の通
りである。 <耐食性の評価基準> ○:アノード分極によっても孔食が発生しないもの ×:アノード分極によって孔食が発生したもの
Example 1 A commercially available SUS316L steel sheet was used, and a Cr-containing layer (metal Cr layer and / or Cr hydroxide layer) was formed and heat-oxidized under the conditions shown in Table 1 below. investigated. At this time, the corrosion resistance is 3% Na at 30 ° C by simulating the condition that water and chlorine-based gas coexist.
It was evaluated by a corrosion test with a Cl aqueous solution. The results are also shown in Table 1. The evaluation criteria of corrosion resistance in Table 1 are as follows. <Evaluation Criteria for Corrosion Resistance> ◯: No pitting corrosion caused by anodic polarization ×: pitting corrosion caused by anodic polarization

【0018】[0018]

【表1】 [Table 1]

【0019】表1により次の様に考察することができ
る。No.1〜5は本発明の規定要件をすべて満たす実施
例であり、Cr23 層が形成されることによって優れ
た耐食性を示している。これらに対しNo.6〜9は、下
記の様に本発明の規定要件のいずれかを欠く比較例であ
り、十分な耐食性が得られない。
The following can be considered from Table 1. Nos. 1 to 5 are examples satisfying all the requirements of the present invention, and show excellent corrosion resistance due to the formation of the Cr 2 O 3 layer. On the other hand, Nos. 6 to 9 are comparative examples lacking any of the prescribed requirements of the present invention as described below, and sufficient corrosion resistance cannot be obtained.

【0020】No.6:Cr水酸化物層の厚さが0.00
2μmと薄いために適切な酸化処理によっても、表面を
完全にCr酸化物で被覆することができず、十分な耐食
性が得られていない。 No.7:Cr含有層の厚さは適当であるが、加熱酸化処
理の酸素分圧が小さすぎるために表面にCr酸化物が生
成せず、十分な耐食性が得られていない。 No.8:Cr含有層の厚さは適当であるが、加熱酸化処
理を大気中で行なったためにFe酸化物が形成して表面
が均一なCr酸化物になっていないために、十分な耐食
性が得られていない。 No.9:Cr含有層の厚さは適当であるが、加熱酸化処
理を実施していないために金属Cr層のわずかな欠陥か
ら素地の腐食が進行し、十分な耐食性が得られていな
い。また金属Cr表面はガス吸着特性からも好ましくな
い。
No. 6: The thickness of the Cr hydroxide layer is 0.00
Since the thickness is as thin as 2 μm, the surface cannot be completely covered with Cr oxide even with an appropriate oxidation treatment, and sufficient corrosion resistance is not obtained. No. 7: The thickness of the Cr-containing layer is appropriate, but since the oxygen partial pressure of the heat oxidation treatment is too small, Cr oxide is not formed on the surface, and sufficient corrosion resistance is not obtained. No. 8: The thickness of the Cr-containing layer is appropriate, but sufficient oxidation resistance is obtained because the Fe oxide is not formed and the surface is not a uniform Cr oxide due to the heat oxidation treatment performed in the atmosphere. Has not been obtained. No. 9: The thickness of the Cr-containing layer is appropriate, but since the heat oxidation treatment is not performed, the corrosion of the base material progresses due to slight defects in the metal Cr layer, and sufficient corrosion resistance is not obtained. In addition, the metal Cr surface is not preferable in terms of gas adsorption characteristics.

【0021】実施例2 SUS316L鋼板上にりん酸−クロム酸を含む水溶液
中で陰極電解することによってCr含有層(CrPO4
・4H2 OおよびCr水酸化物)形成後、表2の条件で
加熱酸化処理を施し、30℃、3%NaCl水溶液によ
る腐食試験により耐食性を評価した。その結果を表2に
併記する。尚評価基準は実施例1と同様である。表2か
ら明らかな様に、本発明の規定要件を満足する実施例の
ものは、優れた耐食性を示していることが分かる。
Example 2 A Cr-containing layer (CrPO 4) was formed on a SUS316L steel plate by cathodic electrolysis in an aqueous solution containing phosphoric acid-chromic acid.
4H 2 O and Cr hydroxide) were formed, heat oxidation treatment was performed under the conditions shown in Table 2, and corrosion resistance was evaluated by a corrosion test using a 3% NaCl aqueous solution at 30 ° C. The results are also shown in Table 2. The evaluation criteria are the same as in Example 1. As is clear from Table 2, it can be seen that the examples satisfying the specified requirements of the present invention exhibit excellent corrosion resistance.

【0022】[0022]

【表2】 [Table 2]

【0023】[0023]

【発明の効果】本発明は以上の様に構成されており、素
地金属材の表面に金属Cr層および/またはCr化合物
層を形成した後、所定の酸素活量雰囲気下で加熱酸化処
理することによって、耐食性に優れた強固なCr酸化物
層を形成することができ、水分が同時に存在する様なハ
ロゲン系ガスに対しても優れた耐食性を示し不純物ガス
の吸着・放出が少ない、半導体製造装置用として卓越し
た性能の表面処理金属材を提供し得ることになった。
EFFECTS OF THE INVENTION The present invention is configured as described above, and after forming a metal Cr layer and / or a Cr compound layer on the surface of a base metal material, heat oxidation treatment is performed in a predetermined oxygen activity atmosphere. By this, a strong Cr oxide layer having excellent corrosion resistance can be formed, and excellent corrosion resistance is exhibited even for a halogen-based gas in which water is present at the same time. It has become possible to provide a surface-treated metal material with excellent performance for use.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 素地金属材を、クロム酸を含む水溶液中
で陰極電解することによって、金属材表面に0.005
〜10μm厚さの金属Cr層および/またはCr化合物
層を形成した後、10-8〜100 Torrの真空雰囲気
下またはこの雰囲気に相当する酸素活量の低酸素分圧雰
囲気下で加熱することによって、前記金属Cr層内また
はCr化合物層内の少なくとも表層部にCr酸化物を形
成することを特徴とする半導体製造装置用金属材の表面
処理法。
1. A base metal material is subjected to cathodic electrolysis in an aqueous solution containing chromic acid to form 0.005 on the surface of the metal material.
After forming a metal Cr layer and / or a Cr compound layer having a thickness of 10 μm, heating in a vacuum atmosphere of 10 −8 to 10 0 Torr or a low oxygen partial pressure atmosphere having an oxygen activity corresponding to this atmosphere. A surface treatment method for a metal material for a semiconductor manufacturing apparatus, characterized in that a Cr oxide is formed on at least a surface layer portion in the metal Cr layer or the Cr compound layer.
JP31784893A 1993-09-30 1993-12-17 Surface treatment of metallic material for semiconductor producing device Withdrawn JPH07145498A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP31784893A JPH07145498A (en) 1993-09-30 1993-12-17 Surface treatment of metallic material for semiconductor producing device
DE4432013A DE4432013A1 (en) 1993-12-17 1994-09-08 Surface treatment of metallic material to impart improved corrosion resistance
SE9403108A SE9403108A0 (en) 1993-12-17 1994-09-16 Process for surface treatment of metallic material for semiconductor manufacturing equipment

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP24503593 1993-09-30
JP5-245035 1993-09-30
JP31784893A JPH07145498A (en) 1993-09-30 1993-12-17 Surface treatment of metallic material for semiconductor producing device

Publications (1)

Publication Number Publication Date
JPH07145498A true JPH07145498A (en) 1995-06-06

Family

ID=26537017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31784893A Withdrawn JPH07145498A (en) 1993-09-30 1993-12-17 Surface treatment of metallic material for semiconductor producing device

Country Status (1)

Country Link
JP (1) JPH07145498A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208431A (en) * 1999-01-13 2000-07-28 Tadahiro Omi Metallic material wherein chromium oxide passivation film is formed, its manufacture and corrosive fluid contacting part and fluid supply/discharge system
JP2008518110A (en) * 2004-11-01 2008-05-29 ゼネラル・モーターズ・コーポレーション Method for producing a corrosion-resistant bipolar plate
JP2010209458A (en) * 2009-02-16 2010-09-24 Nippon Steel & Sumikin Stainless Steel Corp Chromium-plated stainless steel sheet superior in corrosion resistance after having been worked

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208431A (en) * 1999-01-13 2000-07-28 Tadahiro Omi Metallic material wherein chromium oxide passivation film is formed, its manufacture and corrosive fluid contacting part and fluid supply/discharge system
US7935385B2 (en) 1999-01-13 2011-05-03 Tadahiro Ohmi Metal material having formed thereon chromium oxide passive film and method for producing the same, and parts contacting with fluid and system for supplying fluid and exhausting gas
US8137787B1 (en) 1999-01-13 2012-03-20 Tadahiro Ohmi Metal material having formed thereon chromium oxide passive film and method for producing the same, and parts contacting with fluid and system for supplying fluid and exhausting gas
JP2008518110A (en) * 2004-11-01 2008-05-29 ゼネラル・モーターズ・コーポレーション Method for producing a corrosion-resistant bipolar plate
JP2010209458A (en) * 2009-02-16 2010-09-24 Nippon Steel & Sumikin Stainless Steel Corp Chromium-plated stainless steel sheet superior in corrosion resistance after having been worked

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