JPH07142690A - Image sensing device - Google Patents

Abstract

PURPOSE:To provide an image sensing device which is miniaturized so as to be easily mounted on a very narrow part such as the tip of an electronic endoscope. CONSTITUTION:Component semiconductor elements of an amplifier. circuit and the like are formed on a semiconductor substrate 1 to provide a semiconductor element forming part 2, and a first metal wiring 3, an insulating layer 4, and a second metal wiring 5 are formed to constitute a semiconductor device board 6. A chip component 7 is mounted on the board 6, the lead 11 of a package 12 mounted with a solid-state image sensing device 13 is soldered to a second metal wiring 5 provided to one edge of the board 6, and an outer signal conductor 22 is soldered to the second metal wiring 5 provided to the other edge of the board 6 to form an image sensing device.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image pickup apparatus which is used by being attached to a minute portion such as a tip portion of an electronic endoscope.

[0002]

2. Description of the Related Art Conventionally, as an image pickup device which is used by being attached to a minute portion such as a tip portion of an electronic endoscope, the following structure is known. That is, as shown in FIG. 9, a semiconductor element 102 for constructing an amplifier circuit or a bias circuit is arranged on a mounting substrate 101, connected to a wiring portion with a wire 103, and then the connection portion is sealed with a sealing resin 104, and further, The chip component 105 is provided to form the mounting substrate unit 106. Further, as shown in FIG. 10, the solid-state image sensor 111 is placed on the upper surface of the package 113 having the package lead 112 on the lower surface, and the wire 114 is connected to the connecting portion of the package 113. The optical component 115 is disposed in the solid state image pickup device 111 and the side surfaces of the solid state image pickup device 111 and the optical component 115 are sealed with the sealing resin 116 to form the solid state image pickup device portion 117. Then, the package lead 11 of the package 113 of the solid-state imaging device section 117
2, the mounting board 101 of the mounting board section 106 and the relay board
The wiring part formed at one end of the 121 is connected by the solder 122, and the wiring part formed at the other end of the mounting substrate 101 and the relay substrate 121 and the external signal line 123 are connected by the solder 122 and the image pickup device. It is configured to be used by incorporating it into the distal end portion of the electronic endoscope or the like.

[0003]

By the way, in the above-mentioned conventional image pickup apparatus, in the mounting substrate section 106 attached to the solid-state image pickup element section 117, the semiconductor element 102 is mounted on the mounting board 101.
Not only requires a step of mounting the semiconductor element 102, but also requires a space for mounting the semiconductor element 102, the dimension in the thickness direction becomes large due to the mounting, and the mounting to a minute portion such as the tip portion of the electronic endoscope is not required. Therefore, it is not suitable for miniaturization.

The present invention has been made in order to solve the above-mentioned problems in the conventional image pickup apparatus, and provides an image pickup apparatus which can be miniaturized and can be easily attached to a minute portion such as a tip portion of an electronic endoscope. The purpose is to provide.

[0005]

SUMMARY OF THE INVENTION In order to solve the above problems, the invention according to claim 1 is a semiconductor element substrate integrally formed with a semiconductor element on a semiconductor substrate, and a semiconductor element substrate and a solid state. An image pickup device is provided, and a solid-state image pickup device, a chip component, and an external signal line are directly connected to a metal wiring portion of the semiconductor element substrate to form an image pickup apparatus. Further, the invention according to claim 2 has a semiconductor element substrate in which a solid-state imaging device and a semiconductor element are integrally formed on a semiconductor substrate and which is provided with a metal wiring portion, and the semiconductor element substrate includes a chip on the metal wiring portion. The component and the external signal line are directly connected to form an image pickup device.

In the image pickup device constructed as described above,
Since a semiconductor element on a semiconductor substrate, or a semiconductor element substrate integrally formed with a solid-state imaging element and a semiconductor element is used as a mounting substrate, a space for mounting the semiconductor element is not necessary, and the connecting portion can be reduced, The pitch can be narrowed and the size can be easily reduced.

[0007]

EXAMPLES Next, examples will be described. FIG. 1 is a sectional view showing a semiconductor element substrate of a first embodiment of an image pickup apparatus according to the present invention, and FIG. 2 is an image pickup apparatus formed by connecting the semiconductor element substrate shown in FIG. 1 and a solid-state image pickup element section. 2 is a cross-sectional view showing the first embodiment of FIG. In FIG. 1, reference numeral 1 denotes a semiconductor substrate made of silicon, gallium arsenide, or the like, and a semiconductor element forming portion 2 is provided by forming semiconductor elements for constituting peripheral circuits such as an amplifier circuit and a bias circuit on a surface portion of the semiconductor substrate 1. , Then
The first metal wiring 3 is formed using a metal such as Al. Next, the package lead of the package in which the solid-state image sensor is mounted, chip parts (active element and / or passive element),
Au, Ag, Cu, Ni,
The second metal wiring 5 is formed in a single layer or a multi-layer using a metal such as Cr, Ti, W, etc., and an insulating layer made of a passivation film, a resin or the like is provided on a portion other than the portion where the second metal wiring 5 is formed. 4 is provided to form the semiconductor element substrate 6.

Next, as shown in FIG. 2, the solid-state image pickup device 13 is arranged in the package 12 having the package lead 11 provided on the lower surface, and is connected to the electrode portion of the package 12 by the wire 14. The optical component 15 is placed on the upper surface of the solid-state image pickup device 13 and the side surfaces of the solid-state image pickup device 13 and the optical component 15 are sealed with the sealing resin 16 to form the solid-state image pickup device portion 17. Then, one of the package leads 11 of the solid-state image pickup device section 17 is connected to the second metal wiring 5 provided at one end of the semiconductor element substrate 6 with solder 22, and the other of the package leads 11 is provided on the relay substrate 21. The semiconductor element substrate 6, the solid-state imaging device section 17 and the relay substrate 21 are integrated by connecting to one end of the wiring with the solder 22, and the second metal wiring 5 and the relay substrate 21 provided at the other end of the semiconductor element substrate 6 are connected. At the other end of the provided wiring, external signal line 23
Are connected by solder 22 to form an image pickup device. In this case, the incident light direction with respect to the image pickup device and the longitudinal direction of the semiconductor element substrate 6 are arranged in parallel with each other, so that the semiconductor device substrate 6 can be easily mounted on a small portion having a small diameter.

In the image pickup device constructed as described above,
Since the solid-state imaging device section 17, the chip component 7, the external signal line 23, etc. are directly connected to the semiconductor element substrate 6 in which semiconductor elements are integrally formed on the semiconductor substrate 1 and used as a mounting substrate, the semiconductor element is mounted. A space for doing so is unnecessary, and since the connecting portion of the semiconductor element can be reduced, the size can be easily reduced.

In the first embodiment described above, the first metal wiring is formed as a single layer using a metal such as Al, but the first metal wiring is made of Au, Ag, Cu, Ni, Cr. , Ti, W, etc. are used to form a single layer or a multi-layer. Without providing the second metal wiring, in addition to the connection parts such as package leads, chip parts, external signal lines, etc., from the passivation film, resin, etc. You may make it comprise by forming the insulating layer which becomes. Further, in the above embodiment, the semiconductor element forming portion is provided on the front surface portion of the semiconductor element substrate, but the semiconductor element forming portion may be formed on the back surface portion or the front and back both surface portions of the semiconductor element substrate.

In the above embodiment, the package lead and the external signal line are connected by solder. However, the package lead, the external signal line and the chip component are not only connected by solder, but also a conductive resin Connection can be made using means such as one-way conductive resin, thermocompression bonding, ultrasonic waves, or thermocompression bonding using ultrasonic waves. In the above embodiment,
The semiconductor element forming portion of the semiconductor element substrate may be covered with resin or second metal wiring for light shielding. Furthermore, as a mechanical reinforcement and shading of the whole and a measure against external noise, a package mounted with a solid-state image sensor,
After connecting the chip components, the external signal lines, etc., the entire semiconductor element substrate may be covered with resin or the like.

Next, a second embodiment will be described. Figure 3
FIG. 4 is a sectional view showing a semiconductor element substrate of a second embodiment of the present invention, and FIG. 4 shows an image pickup apparatus of the second embodiment in which the semiconductor element substrate shown in FIG. FIG. 3 is a cross-sectional view showing the same or corresponding constituent elements as or corresponding to those of the first embodiment shown in FIGS. 1 and 2. The semiconductor element substrate 6 in this embodiment is configured as follows. That is, as shown in FIG. 3, a semiconductor element forming portion 2 is provided by forming a constituent semiconductor element such as an amplifier or a bias circuit on a surface portion of a semiconductor substrate 1 made of silicon, gallium arsenide, or the like, and then Al or the like. The first metal wiring 3 is formed using metal. Next, the first metal wiring 3
The insulating layer 4 is formed of a passivation film, resin, etc., except for the contact portion of the second metal wiring 5. Next, Au,
The second metal wiring 5 is formed in a necessary portion using a metal such as Ag, Cu, Ni, Cr, Ti, W, etc., and the semiconductor element substrate 6 is configured. At this time, the second metal wiring 5 may be a single layer or a multilayer.

Next, as shown in FIG. 4, the chip component 7 is attached to the semiconductor element substrate 6, and the second metal wiring 5 provided at one end of the semiconductor element substrate 6 is provided with the first component shown in FIG. One of the package leads 11 of the solid-state imaging device section 17 configured in the same manner as in the embodiment is connected by solder 22, and the other of the package leads 11 is connected by solder 22 to one end of the wiring provided on the relay substrate 21. An external signal line 23 is connected by solder 22 to the second metal wiring 5 provided on the other end of the substrate 6 and the other end of the wiring provided on the relay substrate 21 to form an image pickup device.

In the image pickup device constructed as described above,
The size of the first metal wiring 3 formed on the semiconductor element substrate 6 is only required to make contact with the second metal wiring 5. Package lead 11, chip component 7, external signal line
Since it suffices to form a connection portion with 23 or the like, it is possible to further reduce the size.

Also in the second embodiment, the semiconductor element forming portion provided on the semiconductor element substrate may be formed on the back surface portion or the front and back both surface portions. Further, since the semiconductor element forming portion is shielded from light, a resin or a second material is formed. You may comprise so that it may be covered with a metal wiring. Furthermore, as a mechanical reinforcement and shading of the whole and measures against external noise, packages such as solid-state image sensor mounted, chip parts, external signal lines are soldered, conductive resin, anisotropic conductive resin, thermocompression bonding, ultrasonic waves. After the connection is made by thermocompression bonding combined with ultrasonic waves, the entire semiconductor element substrate may be covered with resin or the like.

FIG. 5 is a sectional view showing a semiconductor element substrate according to the third embodiment of the present invention. The semiconductor element substrate 31 in this embodiment is similar to the second embodiment shown in FIG.
After forming the semiconductor element forming portion 2, the first metal wiring 3, the insulating layer 4, and the second metal wiring 5 on the semiconductor substrate 1, on the back surface of the semiconductor substrate 1 for back surface protection and back surface wiring,
A wiring substrate 32 made of a flexible substrate, a glass epoxy substrate, a ceramic substrate, or the like is bonded and configured.

With this structure, the mechanical strength of the semiconductor element substrate can be improved and the density can be further increased. When connecting the solid-state image pickup element portion to the semiconductor element substrate, the relay board is used. It can be omitted.

FIG. 6 is a sectional view showing a semiconductor element substrate according to the fourth embodiment of the present invention. The semiconductor element substrate 41 in this embodiment is similar to the second embodiment shown in FIG.
When the semiconductor element forming portion 2 is formed on the semiconductor substrate 1, the first metal wiring 3 is formed, and then the insulating layer 4 is formed,
An insulating layer 42 is also formed on the back surface of the semiconductor substrate 1, and the second
When the metal wiring 5 is formed, the metal wiring 43 is similarly formed on the insulating layer 42 formed on the back surface of the semiconductor substrate 1. Further, although not shown, a through hole may be formed by forming a hole in the semiconductor element substrate 41 having such a structure, insulating the hole, and providing a conductor, if necessary.

In the semiconductor element substrate thus constructed, double-sided wiring can be performed only by the thickness of the semiconductor element substrate, which enables higher density and downsizing. Can be omitted.

FIG. 7 is a sectional view showing a fifth embodiment of the present invention. In this embodiment, the solid-state image sensor is mounted on the mounting substrate 51.
Secondly, the solid-state imaging device 13 and the semiconductor element substrate 6 are attached to one end of the semiconductor element substrate 6 by die-bonding 13 and the semiconductor element substrate 6 to which the chip component 7 is connected and which is the same as that of the second embodiment shown in FIG. After connecting the metal wiring 5 to the metal wiring 5 with a wire 14 and mounting an optical component (for example, a prism) 15 on the solid-state image sensor 13, the connecting portion between the solid-state image sensor 13 and the semiconductor element substrate 6 is sealed with a sealing resin 16. The second metal wiring 5 which is sealed and provided on the other end of the semiconductor element substrate 6 and the external signal line 23 are connected by a solder 22 to form an image pickup device.

In the image pickup device constructed as described above,
Since it is not necessary to mount the solid-state image pickup device on the package, it is not necessary to connect the package and the semiconductor element substrate with solder or the like, and a narrow pitch connection can be made with wires or the like. Further, since the whole is mounted on a plane, the workability is good, and the pitch of the connecting portions can be narrowed, so that the size can be further reduced. Also in the case of this embodiment, the incident light direction with respect to the image pickup device and the longitudinal direction of the semiconductor element substrate are arranged in parallel.

FIG. 8 is a sectional view showing a sixth embodiment of the present invention. In this embodiment, a semiconductor element substrate 62 is formed by integrally forming a solid-state image sensor 61 on the semiconductor substrate 1 in addition to the semiconductor element forming portion 2 in which an amplifier circuit and a semiconductor element for bias circuit configuration are formed. Is.

By integrally forming the solid-state image pickup element on the semiconductor element substrate as described above, it is possible to reduce the number of connecting portions and the like, and further downsize. Also in this embodiment, as in the third and fourth embodiments shown in FIGS. 5 and 6, in the semiconductor element substrate, a separate wiring board or metal wiring via an insulating layer is provided on the back surface of the semiconductor substrate. It is possible to provide.

In each of the above embodiments, the capacitors used to form the amplifier circuit and the bias circuit are
Not only the chip component but also the semiconductor element substrate can be integrally formed by using the ferroelectric film.

[0025]

As described above on the basis of the embodiments,
According to the present invention, a semiconductor element, or a semiconductor element substrate integrally formed with a solid-state imaging element and a semiconductor element on a semiconductor substrate is used as a mounting substrate, so that a space for mounting the semiconductor element is unnecessary. As a result, the number of connecting portions can be reduced, and the pitch can be narrowed, whereby the size can be easily reduced.

[Brief description of drawings]

FIG. 1 is a sectional view showing a semiconductor element substrate of a first embodiment of an image pickup device according to the present invention.

FIG. 2 is a sectional view showing the configuration of the first embodiment of the present invention.

FIG. 3 is a sectional view showing a semiconductor device substrate of a second embodiment of the present invention.

FIG. 4 is a sectional view showing a configuration of a second exemplary embodiment of the present invention.

FIG. 5 is a sectional view showing a semiconductor device substrate of a third embodiment of the present invention.

FIG. 6 is a sectional view showing a semiconductor device substrate of a fourth embodiment of the present invention.

FIG. 7 is a sectional view showing the structure of a fifth embodiment of the present invention.

FIG. 8 is a sectional view showing the structure of a sixth embodiment of the present invention.

FIG. 9 is a cross-sectional view showing a configuration example of a mounting substrate section of a conventional imaging device.

FIG. 10 is a cross-sectional view showing a configuration example of a conventional imaging device.

[Explanation of symbols]

 1 Semiconductor Substrate 2 Semiconductor Element Forming Part 3 First Metal Wiring 4 Insulating Layer 5 Second Metal Wiring 6 Semiconductor Element Substrate 7 Chip Component 11 Package Lead 12 Package 13 Solid-state Image Sensor 14 Wire 15 Optical Component 16 Sealing Resin 17 Solid Image sensor part 21 Relay substrate 22 Solder 23 External signal line 31 Semiconductor device substrate 32 Wiring substrate 41 Semiconductor device substrate 42 Insulating layer 43 Metal wiring 51 Mounting substrate 61 Solid-state image sensor 62 Semiconductor device substrate

Claims (5)

[Claims] 1. A semiconductor element substrate having a semiconductor element integrally formed on a semiconductor substrate and having a metal wiring portion, and a solid-state image pickup element, wherein the metal wiring portion of the semiconductor element substrate has:
An image pickup device characterized in that a solid-state image pickup element, a chip component, and an external signal line are directly connected. 2. A semiconductor element substrate having a solid-state imaging device and a semiconductor element integrally formed on a semiconductor substrate and having a metal wiring portion, wherein the metal wiring portion of the semiconductor element substrate has a chip component and an external signal line. An image pickup device characterized by being directly connected to. 3. The image pickup device according to claim 1, wherein a separate wiring board is bonded to the back surface of the semiconductor element substrate. 4. An insulating layer and a metal wiring portion are provided on the back surface of the semiconductor element substrate, and a through hole is formed in the semiconductor element substrate provided with the insulating layer and the metal wiring portion to form a double-sided substrate. The imaging device according to claim 1 or 2. 5. The image pickup device according to claim 1, wherein the semiconductor element substrate is arranged so as to be parallel to an incident light direction with respect to the image pickup device.