JPH07142523A - Equipment and method for manufacturing semiconductor - Google Patents
Equipment and method for manufacturing semiconductorInfo
- Publication number
- JPH07142523A JPH07142523A JP5291582A JP29158293A JPH07142523A JP H07142523 A JPH07142523 A JP H07142523A JP 5291582 A JP5291582 A JP 5291582A JP 29158293 A JP29158293 A JP 29158293A JP H07142523 A JPH07142523 A JP H07142523A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- wire
- support
- wires
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体製造装置及び製
造方法に関し、特に、精度の高いワイヤボンディングを
必要とされる半導体の製造技術に適用して有効な技術に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus and manufacturing method, and more particularly to a technology effective when applied to a semiconductor manufacturing technology that requires highly accurate wire bonding.
【０００２】[0002]
【従来の技術】半導体装置の製造では、半導体ウェハの
主面上に回路を形成した後に、半導体ウェハを個々の半
導体ペレットにダイシングし、各半導体ペレットを、プ
リント基板等に実装する際に接続端子となるリードと半
導体ペレットとを接続した後に、パッケージに収容して
半導体装置ができあがる。2. Description of the Related Art In the manufacture of semiconductor devices, after a circuit is formed on the main surface of a semiconductor wafer, the semiconductor wafer is diced into individual semiconductor pellets, and when each semiconductor pellet is mounted on a printed circuit board or the like, a connection terminal is formed. After connecting the lead and the semiconductor pellet, the semiconductor device is completed by housing in a package.
【０００３】このリードとの接続のために半導体ペレッ
トの表面にはボンディングパッドが形成されている。ボ
ンディングパッドには、ボンディングワイヤ或いはＴＡ
Ｂテープ等のボンディング部材の一端が接続され、ボン
ディング部材の他端がリードのボンディングポストに接
続される。Bonding pads are formed on the surface of the semiconductor pellet for connection with the leads. The bonding pad has a bonding wire or TA.
One end of a bonding member such as a B tape is connected, and the other end of the bonding member is connected to a bonding post of a lead.
【０００４】このようなボンディングの際に、電源など
の配線では、大きな電流が流れるために、接続するボン
ディングワイヤも太くすることが望ましい。しかし、ボ
ンディングワイヤを太くした場合にはワイヤが曲がりに
くくなるため制御性が劣化する。また、他の用途のボン
ディングワイヤと太さの異なるワイヤでボンディングを
行うのでは作業が煩雑になり効率が低下する。そこで、
ボンディングするワイヤの数を増やすことによって大電
流に対処するために、ダブルボンディング等の複数本の
ワイヤを並列に接続する方法が用いられている。At the time of such bonding, a large current flows through the wiring such as the power supply, so that it is desirable that the bonding wire to be connected be thick. However, when the bonding wire is thickened, the wire is less likely to bend, and the controllability deteriorates. Further, if the bonding wire having a thickness different from that of the bonding wire for other uses is used, the work becomes complicated and the efficiency is lowered. Therefore,
In order to cope with a large current by increasing the number of wires to be bonded, a method of connecting a plurality of wires in parallel such as double bonding is used.
【０００５】また、近年の半導体装置の高集積化に伴
い、１つの半導体ペレットに形成されるトランジスタ等
の素子の数が増加し、より多くの機能を１つの半導体ペ
レットに搭載することが可能となった。このような機能
の増加によって、入出力・電源など外部の回路と接続さ
れる配線数が増加し、また、回路が複雑になるにつれて
回路試験用に外部と接続される配線も増加している。こ
のような配線数の増加に応じて半導体装置の接続端子で
あるピンの数も増加し、ピンと接続するために半導体ペ
レットに設けるボンディングパッドの数も同様に増加し
ている。Further, with the recent high integration of semiconductor devices, the number of elements such as transistors formed on one semiconductor pellet increases, and more functions can be mounted on one semiconductor pellet. became. Due to such an increase in functions, the number of wirings connected to external circuits such as input / output and power supply is increasing, and as the circuit becomes more complicated, the wirings connected to the outside for circuit testing are also increasing. As the number of wires increases, the number of pins that are connection terminals of the semiconductor device also increases, and the number of bonding pads provided on the semiconductor pellet for connecting to the pins also increases.
【０００６】しかしながら、ペレットの大きさはそれに
応じて大きくはならないので、ボンディングパッドを多
数形成するために複数の列に配置形成する場合がある。
ボンディングパッドを複数の列に形成した場合には、先
ずペレットの外側のボンディングパッドからのボンディ
ングを行ない、次に該ボンディングのワイヤを跨ぐ形で
ペレットの内側のボンディングパッドからのボンディン
を行なう二層ループボンディングが行われているHowever, since the size of the pellet does not increase accordingly, it may be arranged in a plurality of rows to form a large number of bonding pads.
When the bonding pads are formed in a plurality of rows, a two-layer loop in which bonding is first performed from the bonding pad outside the pellet, and then bonding is performed from the bonding pad inside the pellet while straddling the bonding wire. Bonding is being done
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、二層ル
ープボンディングを行う場合には、他のボンディングワ
イヤの上にボンディングするボンディングワイヤのルー
プが大きくなりボンディングワイヤが長くなるために、
図１に破線で示すように、ボンディングワイヤ１ａが垂
れ下がり、他のボンディングワイヤ１ｂ、ボンディング
ポスト２或いはボンディングパッド等の他の導電体と接
触して短絡するなどのボンディング不良が生じ、半導体
装置が作動不良或いは作動不能となることがある。However, when performing two-layer loop bonding, since the loop of the bonding wire to be bonded on another bonding wire becomes large and the bonding wire becomes long,
As indicated by a broken line in FIG. 1, the bonding wire 1a hangs down, comes into contact with another bonding wire 1b, the bonding post 2 or another conductor such as a bonding pad to cause a short circuit, and a bonding failure occurs, thereby operating the semiconductor device. It may be defective or inoperable.
【０００８】これを防止するためには、ボンディングワ
イヤと他の導電体との接触を防止するために、ワイヤと
他の導電体とのクリアランスを確保する必要があり、ボ
ンディングワイヤと他のボンディングワイヤとの間には
できるだけ距離をおくことが望ましい。In order to prevent this, it is necessary to secure a clearance between the wire and the other conductor in order to prevent contact between the bonding wire and the other conductor. It is desirable to keep as much distance as possible between and.
【０００９】だが、このように距離を置いた場合にはボ
ンディングワイヤが更に長くなり、ボンディングワイヤ
の電気抵抗が増加する。However, when such a distance is set, the bonding wire becomes longer and the electrical resistance of the bonding wire increases.
【００１０】また、ボンディングワイヤのループ高さは
パッケージの厚さによって制限を受ける。このため、ボ
ンディングワイヤの許容範囲が小さくなり、ループコン
トロ−ルが難しく、ワイヤ変形不良も起こり易い。ま
た、ワイヤループコントロ−ルの条件出し，ワイヤと他
の導電体とのクリアランス測定及びループ高さ測定に時
間がかかるため、ボンディングに要する時間も長くな
り、スループットが低下する。Also, the loop height of the bonding wire is limited by the thickness of the package. For this reason, the allowable range of the bonding wire is reduced, loop control is difficult, and defective wire deformation easily occurs. In addition, since it takes time to set the conditions of the wire loop control, measure the clearance between the wire and another conductor, and measure the loop height, the time required for bonding becomes long and the throughput decreases.
【００１１】このような問題の対策として、現在採られ
ている方法は、キャピラリの軌道調整を入念に行う或い
はワイヤの材質或いは太さを変更する程度で、ワイヤの
垂れ下がりを防止する有効な手段がなく、不良の発生し
た半導体装置は、顕微鏡を用いた目視による外観検査に
よって発見し、不良個所の修正を行っているが、この作
業が生産性向上の障害となっている。As a measure against such a problem, the method currently adopted is an effective means for preventing sagging of the wire only by carefully adjusting the trajectory of the capillary or changing the material or the thickness of the wire. The defective semiconductor device is found by visual inspection using a microscope and the defective portion is corrected, but this work is an obstacle to improving productivity.
【００１２】また、このような不良を防止するために、
絶縁材によって被覆した被覆ワイヤによってボンディン
グを行うことも考えられているが、費用の点で問題があ
る。In order to prevent such a defect,
Bonding with a covered wire covered with an insulating material has been considered, but there is a problem in terms of cost.
【００１３】本発明の目的は、ボンディングワイヤの接
触によるボンディング不良を防止することが可能な技術
を提供することにある。An object of the present invention is to provide a technique capable of preventing defective bonding due to contact of bonding wires.
【００１４】本発明の他の目的は、ボンディング作業を
迅速に行い得る技術を提供することにある。Another object of the present invention is to provide a technique capable of rapidly performing a bonding operation.
【００１５】本発明の他の目的は、ボンディングワイヤ
の配線長を短縮することが可能な技術を提供することに
ある。Another object of the present invention is to provide a technique capable of shortening the wiring length of a bonding wire.
【００１６】本発明の前記ならびにその他の目的と新規
な特徴は、本明細書の記述及び添付図面によって明らか
になるであろう。The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.
【００１７】[0017]
【課題を解決するための手段】本願において開示される
発明のうち、代表的なものの概要を簡単に説明すれば、
下記のとおりである。Of the inventions disclosed in the present application, a representative one will be briefly described below.
It is as follows.
【００１８】ボンディング時に、ボンディング箇所の中
間に配置したワイヤ支持体によってワイヤの移動を規制
してボンディングを行う。At the time of bonding, the movement of the wire is regulated by the wire support disposed in the middle of the bonding portion to perform the bonding.
【００１９】[0019]
【作用】上述した手段によれば、ワイヤ支持体によって
ボンディングワイヤの移動が規制され、ボンディングワ
イヤの垂れ下がりが防止できる。According to the above-mentioned means, the movement of the bonding wire is regulated by the wire support, and the sagging of the bonding wire can be prevented.
【００２０】また、ワイヤ支持体によってボンディング
ワイヤの移動が規制されるので、ループコントロールが
容易となり、作業を迅速に進めることが可能となる。Further, since the movement of the bonding wire is restricted by the wire support, the loop control becomes easy, and the work can be advanced quickly.
【００２１】更に、ボンディングワイヤ間のマージンを
低減できるので、ワイヤ長を短くすることが可能とな
る。Furthermore, since the margin between the bonding wires can be reduced, the wire length can be shortened.
【００２２】以下、本発明の構成について、実施例とと
もに説明する。The structure of the present invention will be described below together with embodiments.
【００２３】なお、実施例を説明するための全図におい
て、同一機能を有するものは同一符号を付け、その繰り
返しの説明は省略する。In all the drawings for explaining the embodiments, parts having the same function are designated by the same reference numerals, and the repeated description thereof will be omitted.
【００２４】[0024]
【実施例】（実施例１）図２に示すのは、本発明の一実
施例である半導体製造装置を示す部分平面図であり、図
３に示すのは、図２中Ａ‐Ａ線に沿った断面図である。
本実施例では半導体ペレットとパッケージのボンディン
グポストとを二層ループボンディングによって接続して
いる。(Embodiment 1) FIG. 2 is a partial plan view showing a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 3 is a view taken along the line AA in FIG. FIG.
In this embodiment, the semiconductor pellet and the bonding post of the package are connected by double-layer loop bonding.
【００２５】図中、１１はパッケージ、１２はパッケー
ジ１１に固定された半導体ペレット、１２ａ，１２ｂは
半導体ペレット１２のボンディングパッド、１３ａ，１
３ｂはパッケージのボンディングポスト、１４ａ，１４
ｂはボンディングワイヤであり、ボンディングパッド１
２ａとボンディングポスト１３ａとをボンディングワイ
ヤ１４ａによって接続し、ボンディングパッド１２ｂと
ボンディングポスト１３ｂとをボンディングワイヤ１４
ｂによって接続する。In the figure, 11 is a package, 12 is a semiconductor pellet fixed to the package 11, 12a and 12b are bonding pads of the semiconductor pellet 12, and 13a and 1a.
3b is a bonding post of the package, and 14a, 14
b is a bonding wire, and a bonding pad 1
2a and the bonding post 13a are connected by a bonding wire 14a, and the bonding pad 12b and the bonding post 13b are connected by the bonding wire 14a.
Connect by b.
【００２６】先ず第１のボンディングワイヤ１４ａによ
って、第１のボンディングパッド１２ａと第１のボンデ
ィングポスト１３ａとのボンディングを行ない、第１の
ボンディングが完了した後に、第１のボンディングワイ
ヤ１４ａの上方に、ワイヤ支持体１５を駆動機構（図示
せず）によって移動配置する。ワイヤ支持体１５は、一
端を基部１６に固定した２本の円柱で構成し、支持体１
５の他端は移動配置した状態で支持台１７に支持され
る。その後、ワイヤ支持体１５上を経由して第２のボン
ディングワイヤ１４ｂによって、第２のボンディングパ
ッド１２ｂと第２のボンディングポスト１３ｂとをボン
ディングする。First, the first bonding wire 14a is used to bond the first bonding pad 12a and the first bonding post 13a, and after the first bonding is completed, above the first bonding wire 14a, The wire support 15 is moved and arranged by a drive mechanism (not shown). The wire support 15 is composed of two cylinders, one end of which is fixed to the base 16, and the support 1
The other end of 5 is supported by the support stand 17 in a moved and arranged state. After that, the second bonding pad 12b and the second bonding post 13b are bonded by the second bonding wire 14b via the wire support 15.
【００２７】第２のボンディングが終了すると、支持体
１５を、図２中わずかに下方に移動させてボンディング
ワイヤ１４ｂとの接触を解いてから、ボンディングワイ
ヤ１４ａ，１４ｂと直交する方向（図２中、下方向）に
移動させ、ボンディングワイヤ１４ａ，１４ｂ間から退
去させる。When the second bonding is completed, the support 15 is moved slightly downward in FIG. 2 to release the contact with the bonding wires 14b, and then in a direction orthogonal to the bonding wires 14a and 14b (in FIG. 2). , Downward), and is withdrawn from between the bonding wires 14a and 14b.
【００２８】本実施例によれば、第２のボンディングの
際に、ボンディングワイヤ１４ｂが支持体１５によって
下方向への移動を規制されるのでワイヤループが垂れ下
がることがなく、ボンディング不良が生じない。According to the present embodiment, the bonding wire 14b is restricted from moving downward by the supporting member 15 during the second bonding, so that the wire loop does not hang down and the bonding failure does not occur.
【００２９】また、ワイヤ支持体１５によってボンディ
ングワイヤ１４ｂの移動が規制されるので、ループコン
トロールが容易となり、作業を迅速に進めることが可能
となる。Further, since the movement of the bonding wire 14b is restricted by the wire support 15, the loop control becomes easy and the work can be carried out quickly.
【００３０】更に、ボンディングワイヤ１４ａ，１４ｂ
間のマージンを低減できるので、ワイヤ長を短くするこ
とが可能となる。Further, the bonding wires 14a, 14b
Since the margin between them can be reduced, the wire length can be shortened.
【００３１】加えて、ワイヤ支持体１５によってボンデ
ィングワイヤ１４ｂを支持するので、支持体１５以降の
ワイヤ１４ｂが急激な軌道をとってもそれ以前のワイヤ
１４ｂの形状に影響を与えることがない。従って、ワイ
ヤループの自由度が増し、最短距離を通るボンディング
を行なうことができるので、ワイヤ長を短くすることが
可能となる。In addition, since the wire support 15 supports the bonding wire 14b, even if the wire 14b after the support 15 takes a sudden trajectory, it does not affect the shape of the wire 14b before that. Therefore, the degree of freedom of the wire loop is increased, and bonding can be performed over the shortest distance, so that the wire length can be shortened.
【００３２】本実施例では支持体を２本の円柱によって
構成したが、支持体として板状のもの等種々の構成が可
能である。ワイヤループ軌道と対応した形状に支持体の
形状を変えて、支持体に沿わせてボンディングを行なう
ことによって、ボンディングワイヤを所望の形状に張る
ことも可能である。In the present embodiment, the support body is composed of two cylinders, but the support body may have various configurations such as a plate-like one. It is also possible to stretch the bonding wire into a desired shape by changing the shape of the support to a shape corresponding to the wire loop trajectory and performing bonding along the support.
【００３３】（実施例２）図４に示すのは、本発明の他
の実施例である半導体製造装置を示す部分平面図であ
る。(Embodiment 2) FIG. 4 is a partial plan view showing a semiconductor manufacturing apparatus according to another embodiment of the present invention.
【００３４】本実施例では半導体ペレット１２のボンデ
ィングパッド１２ａ，１２ｂとパッケージ１１のボンデ
ィングポスト１３ａ，１３ｂとを各々ボンディングワイ
ヤ１４ａ，１４ｂによる二層ループボンディングによっ
て接続している。In this embodiment, the bonding pads 12a and 12b of the semiconductor pellet 12 and the bonding posts 13a and 13b of the package 11 are connected by double-layer loop bonding with bonding wires 14a and 14b, respectively.
【００３５】先ず第１のボンディングワイヤ１４ａによ
って、第１のボンディングパッド１２ａと第１のボンデ
ィングポスト１３ａとのボンディングを行ない、第１の
ボンディングが完了した後に、第１のボンディングワイ
ヤ１４ａの上方に、ワイヤ支持体２５を駆動機構（図示
せず）によって移動配置する。ワイヤ支持体２５は、先
端に鉤型部２５ａを設けた複数のアーム２５ｂを櫛状に
基部２６に一体に並設して構成し、支持体２５の鉤型部
２５ａによってワイヤ１４ｂの下方向への移動を規制し
てボンディングを行なう。第２のボンディング終了後
は、支持体２５は、ボンディングワイヤ１４ａ，１４ｂ
と直交する方向（図４中、下方向）にわずかに移動して
鉤型部を各ボンディングワイヤ１４ｂの間に位置させた
後に、ボンディングワイヤ１４ｂに沿った方向にボンデ
ィングワイヤ１４ｂの間を抜けて（図４中、右方向）に
移動退去する。First, the first bonding pad 14a and the first bonding post 13a are bonded by the first bonding wire 14a, and after the first bonding is completed, above the first bonding wire 14a, The wire support 25 is moved and arranged by a drive mechanism (not shown). The wire supporting body 25 is configured by integrally arranging a plurality of arms 25b having hook-shaped portions 25a at the tips thereof in parallel with the base portion 26 in a comb shape, and the hook-shaped portions 25a of the supporting body 25 move the wires 14b downwards. The movement is restricted and bonding is performed. After the completion of the second bonding, the supporting body 25 has the bonding wires 14a and 14b.
After slightly moving in the direction orthogonal to (downward in FIG. 4) to position the hook-shaped portion between the bonding wires 14b, the wire is passed through the bonding wires 14b in the direction along the bonding wires 14b. Move and retreat (to the right in FIG. 4).
【００３６】本実施例によれば、第２のボンディングの
際に、ボンディングワイヤ１４ｂが支持体２５によって
下方向への移動を規制されるのでワイヤループが垂れ下
がることがなく、ボンディング不良が生じない。According to this embodiment, since the bonding wire 14b is restricted from moving downward by the supporting member 25 during the second bonding, the wire loop does not hang down and no defective bonding occurs.
【００３７】また、ワイヤ支持体２５によってボンディ
ングワイヤ１４ｂの移動が規制されるので、ループコン
トロールが容易となり、作業を迅速に進めることが可能
となる。Further, since the movement of the bonding wire 14b is restricted by the wire support 25, the loop control becomes easy and the work can be advanced quickly.
【００３８】更に、ボンディングワイヤ１４ａ，１４ｂ
間のマージンを低減できるので、ワイヤ長を短くするこ
とが可能となる。Further, the bonding wires 14a, 14b
Since the margin between them can be reduced, the wire length can be shortened.
【００３９】加えて、ワイヤ支持体２５によってボンデ
ィングワイヤ１４ｂを支持するので、支持体２５以降の
ワイヤ１４ｂが急激な軌道をとってもそれ以前のワイヤ
１４ｂの形状に影響を与えることがない。従って、ワイ
ヤループの自由度が増し、最短距離を通るボンディング
を行なうことができるので、ワイヤ長を短くすることが
可能となる。In addition, since the bonding wire 14b is supported by the wire support 25, even if the wire 14b after the support 25 takes a sharp trajectory, it does not affect the shape of the wire 14b before that. Therefore, the degree of freedom of the wire loop is increased, and bonding can be performed over the shortest distance, so that the wire length can be shortened.
【００４０】本実施例の支持体として種々の構成が可能
である。例えば、先端の鉤型部をアームに対して可動式
にしてボンディング作業時のみ鉤型部をボンディング方
向と直交させる構成としてもよい。ワイヤループ軌道と
対応した形状に支持体の形状を変えて、支持体に沿わせ
てボンディングを行なうことによって、ボンディングワ
イヤを所望の形状に張ることも可能である。Various configurations are possible as the support of this embodiment. For example, the hook-shaped portion at the tip may be movable with respect to the arm, and the hook-shaped portion may be orthogonal to the bonding direction only during the bonding work. It is also possible to stretch the bonding wire into a desired shape by changing the shape of the support to a shape corresponding to the wire loop trajectory and performing bonding along the support.
【００４１】また、支持体の移動に関しても、ボンディ
ングワイヤと直交する方向に移動した後に、基部を中心
軸とした回転運動によって移動退去する構成も可能であ
る。Regarding the movement of the support, it is also possible to move the support in a direction orthogonal to the bonding wire, and then move it back and forth by rotational movement about the base.
【００４２】本実施例では、各アームの長さ或いは基部
に対する角度等の設定を変えることによって、各ボンデ
ィングワイヤごとにループの条件を変更することが容易
であるという特徴がある。The present embodiment is characterized in that it is easy to change the loop condition for each bonding wire by changing the setting of the length of each arm or the angle with respect to the base.
【００４３】（実施例３）図５に示すのは、本発明の他
の実施例である半導体製造装置を示す部分平面図であ
る。(Embodiment 3) FIG. 5 is a partial plan view showing a semiconductor manufacturing apparatus according to another embodiment of the present invention.
【００４４】本実施例では半導体ペレット１２のボンデ
ィングパッド１２ａ，１２ｂとパッケージ１１のボンデ
ィングポスト１３ａ，１３ｂとを各々ボンディングワイ
ヤ１４ａ，１４ｂによる二層ループボンディングによっ
て接続している。In this embodiment, the bonding pads 12a and 12b of the semiconductor pellet 12 and the bonding posts 13a and 13b of the package 11 are connected by double-layer loop bonding with bonding wires 14a and 14b, respectively.
【００４５】先ず第１のボンディングワイヤ１４ａによ
って、第１のボンディングパッド１２ａと第１のボンデ
ィングポスト１３ａとのボンディングを行ない、第１の
ボンディングの後に、第１のボンディングワイヤ１４ａ
の上方に、ワイヤ支持体３５を駆動機構（図示せず）に
よって移動配置する。ワイヤ支持体３５は、先端に鉤型
部３５ａを設けたアーム３５ｂを櫛状に基部３６に取り
付け、基部３６がボンディングに同期して移動する構成
となっている。この支持体３５の鉤型部３５ａによって
ワイヤ１４ｂの下方向への移動を規制して第２のボンデ
ィングを行なう。第２のボンディング終了後は、隣接し
たボンディング箇所の第１のボンディング（図５中、破
線で表す）を行ない該第１のボンディング終了後に、支
持体３５は、基部３６とともに、ボンディングワイヤ１
４ｂと直交する方向（図５中、下方向）にボンディング
の間隔に移動退去して、鉤型部３５ａを次の第２のボン
ディングワイヤが張られる位置（図５中、破線で表す）
に移動配置する。First, the first bonding wire 14a is used to bond the first bonding pad 12a and the first bonding post 13a. After the first bonding, the first bonding wire 14a is bonded.
The wire support 35 is moved and arranged above the above by a driving mechanism (not shown). The wire support 35 has a structure in which an arm 35b provided with a hook-shaped portion 35a at its tip is attached to the base 36 in a comb shape, and the base 36 moves in synchronization with bonding. The hook-shaped portion 35a of the support body 35 regulates the downward movement of the wire 14b to perform the second bonding. After the second bonding is completed, the first bonding (represented by a broken line in FIG. 5) of the adjacent bonding portions is performed. After the first bonding is completed, the support body 35, together with the base 36, is bonded to the bonding wire 1
4b is a position (represented by a broken line in FIG. 5) at which the second bonding wire is stretched by moving and retreating at a bonding interval in a direction orthogonal to 4b (downward in FIG. 5) and hooking part 35a.
Move to place.
【００４６】なお、本実施例では、第１のボンディング
を全て完了する以前に、各々第１のボンディングに続け
て第２のボンディングを行なうが、前述した実施例のよ
うに第１のボンディングを全て完了した後に第２のボン
ディングを行なうことも可能である。In this embodiment, the second bonding is performed after the first bonding before the first bonding is completed. However, as in the above-described embodiment, all the first bonding is performed. It is also possible to perform the second bonding after completion.
【００４７】本実施例によれば、第２のボンディングの
際に、ボンディングワイヤ１４ｂが支持体３５によって
下方向への移動を規制されるのでワイヤループが垂れ下
がることがなく、ボンディング不良が生じない。According to the present embodiment, the bonding wire 14b is restricted from moving downward by the support member 35 during the second bonding, so that the wire loop does not hang down and no defective bonding occurs.
【００４８】また、ワイヤ支持体３５によってボンディ
ングワイヤ１４ｂの移動が規制されるので、ループコン
トロールが容易となり、作業を迅速に進めることが可能
となる。Further, since the movement of the bonding wire 14b is restricted by the wire support 35, the loop control becomes easy and the work can be carried out quickly.
【００４９】更に、ボンディングワイヤ１４ａ，１４ｂ
間のマージンを低減できるので、ワイヤ長を短くするこ
とが可能となる。Further, the bonding wires 14a, 14b
Since the margin between them can be reduced, the wire length can be shortened.
【００５０】加えて、ワイヤ支持体３５によってボンデ
ィングワイヤ１４ｂを支持するので、支持体３５以降の
ワイヤ１４ｂが急激な軌道をとってもそれ以前のワイヤ
１４ｂの形状に影響を与えることがない。従って、ワイ
ヤループの自由度が増し、最短距離を通るボンディング
を行なうことができるので、ワイヤ長を短くすることが
可能となる。In addition, since the bonding wire 14b is supported by the wire support 35, even if the wire 14b after the support 35 takes a sudden trajectory, it does not affect the shape of the previous wire 14b. Therefore, the degree of freedom of the wire loop is increased, and bonding can be performed over the shortest distance, so that the wire length can be shortened.
【００５１】本実施例では、基台に駆動機構を設け、ア
ームの基台に対する長さ・角度を変更することによって
鉤型部の位置設定を変えることが可能であり、各ボンデ
ィングワイヤごとにループの条件を変えることが容易で
ある。また、ワイヤの間隔による制約を受けないので、
ワイヤ支持体の形状・寸法の自由度が高いという特徴が
ある。In this embodiment, it is possible to change the position setting of the hook-shaped portion by providing a drive mechanism on the base and changing the length and angle of the arm with respect to the base, and loops for each bonding wire. It is easy to change the conditions of. Also, because it is not restricted by the wire spacing,
The wire support is characterized by high flexibility in shape and size.
【００５２】以上、本発明者によってなされた発明を、
前記実施例に基づき具体的に説明したが、本発明は、前
記実施例に限定されるものではなく、その要旨を逸脱し
ない範囲において種々変更可能であることは勿論であ
る。As described above, the invention made by the present inventor is
Although the present invention has been specifically described based on the above-mentioned embodiments, the present invention is not limited to the above-mentioned embodiments, and it goes without saying that various modifications can be made without departing from the scope of the invention.
【００５３】例えば、前記の実施例では、二層ループボ
ンディングにおいてワイヤ支持体によってボンディング
ワイヤの垂直方向の規制を行ったが、他に、支持体を垂
直に設け水平方向の規制を行うことにより、Ｊループボ
ンディングのような水平方向に変位するボンディング、
或いは段差の大きなディープアクセスボンディング等、
二層ループボンディングに限らずループコントロールが
難しい各種のボンディングに用いても効果的である。For example, in the above-mentioned embodiment, the bonding wire is regulated in the vertical direction by the wire support in the two-layer loop bonding, but in addition, the support is provided vertically and regulated in the horizontal direction. Bonding that is displaced in the horizontal direction, such as J-loop bonding,
Or deep access bonding with large steps,
It is effective not only for two-layer loop bonding but also for various kinds of bonding where loop control is difficult.
【００５４】また、前記の実施例では半導体ペレットと
パッケージとのボンディングを例に挙げたが、ペレット
相互のボンディング等ボンディング全般に有効である。Further, in the above-mentioned embodiment, the bonding between the semiconductor pellet and the package is taken as an example, but it is effective in general bonding such as bonding between pellets.
【００５５】[0055]
【発明の効果】本願において開示される発明のうち代表
的なものによって得られる効果を簡単に説明すれば、下
記のとおりである。The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.
【００５６】（１）本発明によれば、ボンディングワイ
ヤの接触によるボンディング不良を防止することができ
るという効果がある。(1) According to the present invention, it is possible to prevent defective bonding due to contact of the bonding wires.
【００５７】（２）本発明によれば、前記効果（１）に
より、ボンディングワイヤの修正などの補助作業をなく
すことができるので生産効率が向上するという効果があ
る。(2) According to the present invention, by the effect (1), it is possible to eliminate the auxiliary work such as the correction of the bonding wire, so that the production efficiency is improved.
【００５８】（３）本発明によれば、前記効果（１）に
より、半導体装置の信頼性が向上するという効果があ
る。(3) According to the present invention, the effect (1) improves the reliability of the semiconductor device.
【００５９】（４）本発明によれば、ワイヤ支持体によ
ってボンディングワイヤを支えるのでボンディングワイ
ヤの制御が容易になるという効果がある。(4) According to the present invention, since the bonding wire is supported by the wire support, the bonding wire can be easily controlled.
【００６０】（５）本発明によれば、前記効果（４）に
より、ボンディング作業を迅速に行なうことが可能にな
るという効果がある。(5) According to the present invention, due to the effect (4), there is an effect that the bonding work can be performed quickly.
【００６１】（６）本発明によれば、ワイヤ支持体によ
ってボンディングワイヤを支えるのでボンディングワイ
ヤのループを小さくすることができるという効果があ
る。(6) According to the present invention, since the bonding wire is supported by the wire support, there is an effect that the loop of the bonding wire can be reduced.
【００６２】（７）本発明によれば、前記効果（６）に
より、パッケージを薄型化することができるという効果
がある。(7) According to the present invention, there is an effect that the package can be made thin due to the effect (6).
【００６３】（８）本発明によれば、前記効果（６）に
より、配線長を短くすることが可能になるという効果が
ある。(8) According to the present invention, the effect (6) has an effect that the wiring length can be shortened.
【図１】 従来の半導体製造装置を示す部分断面図、FIG. 1 is a partial cross-sectional view showing a conventional semiconductor manufacturing apparatus,
【図２】 本発明の一実施例である半導体製造装置を示
す部分平面図、FIG. 2 is a partial plan view showing a semiconductor manufacturing apparatus according to an embodiment of the present invention,
【図３】 図２中、Ａ‐Ａ線に沿った断面図、FIG. 3 is a sectional view taken along the line AA in FIG.
【図４】 本発明他の実施例である半導体製造装置を示
す部分平面図、FIG. 4 is a partial plan view showing a semiconductor manufacturing apparatus according to another embodiment of the present invention,
【図５】 本発明他の実施例である半導体製造装置を示
す部分平面図である。FIG. 5 is a partial plan view showing a semiconductor manufacturing apparatus according to another embodiment of the present invention.
１ａ，１ｂ，１４ａ，１４ｂ…ボンディングワイヤ、
２，１３ａ，１３ｂ…ボンディングポスト、１１…パッ
ケージ、１２…半導体ペレット、１２ａ，１２ｂ…ボン
ディングパッド、１５，２５，３５…ワイヤ支持体、１
６，２６，３６…基部、１７…支持台、２５ａ，３５ａ
…鉤型部、２５ｂ，３５ｂ…アーム。1a, 1b, 14a, 14b ... Bonding wire,
2, 13a, 13b ... Bonding post, 11 ... Package, 12 ... Semiconductor pellet, 12a, 12b ... Bonding pad, 15, 25, 35 ... Wire support, 1
6, 26, 36 ... Base part, 17 ... Support base, 25a, 35a
... Hook-shaped parts, 25b, 35b ... Arms.
Claims (5)
ワイヤによって接続し電気的に導通させる半導体製造装
置において、ボンディングを行なうボンディング箇所の
中間に、ボンディングワイヤの移動を規制する支持体を
配置することを特徴とする半導体製造装置。1. In a semiconductor manufacturing apparatus in which a plurality of bonding points are connected by bonding wires and electrically connected, a support for restricting the movement of the bonding wires is arranged in the middle of the bonding points for bonding. Semiconductor manufacturing equipment.
ワイヤによって接続し電気的に導通させる半導体製造方
法において、ボンディング箇所の中間に支持体を移動配
置させる工程と、ボンディングワイヤが支持体上を経由
してボンディング箇所をボンディングする工程と、前記
支持体を退去させる工程とを有することを特徴とする半
導体製造方法。2. A method of manufacturing a semiconductor in which a plurality of bonding points are connected by bonding wires and electrically connected to each other, a step of moving and arranging a support in the middle of the bonding points, and the bonding wires being bonded via the support. A method of manufacturing a semiconductor, comprising: a step of bonding a portion and a step of withdrawing the support.
ヤにわたって、該ボンディングワイヤと直交する方向に
延設されていることを特徴とする請求項１又は請求項２
の何れかに記載の半導体製造装置又は半導体製造方法。3. The support according to claim 1, wherein the support extends over a plurality of bonding wires in a direction orthogonal to the bonding wires.
9. The semiconductor manufacturing apparatus or semiconductor manufacturing method according to any one of 1.
対応して複数設けられていることを特徴とする請求項１
又は請求項２の何れかに記載の半導体製造装置又は半導
体製造方法。4. The support is provided in a plurality corresponding to each bonding wire.
Alternatively, the semiconductor manufacturing apparatus or the semiconductor manufacturing method according to claim 2.
て順次移動することを特徴とする請求項１又は請求項２
の何れかに記載の半導体製造装置又は半導体製造方法。5. The support according to claim 1, wherein the support sequentially moves in synchronization with each bonding.
9. The semiconductor manufacturing apparatus or semiconductor manufacturing method according to any one of 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5291582A JPH07142523A (en) | 1993-11-22 | 1993-11-22 | Equipment and method for manufacturing semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5291582A JPH07142523A (en) | 1993-11-22 | 1993-11-22 | Equipment and method for manufacturing semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07142523A true JPH07142523A (en) | 1995-06-02 |
Family
ID=17770803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5291582A Pending JPH07142523A (en) | 1993-11-22 | 1993-11-22 | Equipment and method for manufacturing semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07142523A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6762490B2 (en) * | 2001-10-29 | 2004-07-13 | Oki Electric Industry Co., Ltd. | Semiconductor device and method for producing the same |
| CN104051400A (en) * | 2013-03-12 | 2014-09-17 | 飞思卡尔半导体公司 | Brace for bond wire |
| CN113517255A (en) * | 2021-04-23 | 2021-10-19 | 长鑫存储技术有限公司 | Semiconductor structure and manufacturing method thereof |
-
1993
- 1993-11-22 JP JP5291582A patent/JPH07142523A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6762490B2 (en) * | 2001-10-29 | 2004-07-13 | Oki Electric Industry Co., Ltd. | Semiconductor device and method for producing the same |
| CN104051400A (en) * | 2013-03-12 | 2014-09-17 | 飞思卡尔半导体公司 | Brace for bond wire |
| CN113517255A (en) * | 2021-04-23 | 2021-10-19 | 长鑫存储技术有限公司 | Semiconductor structure and manufacturing method thereof |
| CN113517255B (en) * | 2021-04-23 | 2023-09-22 | 长鑫存储技术有限公司 | Semiconductor structure and manufacturing method thereof |
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