JPH07142312A - Resist processing apparatus - Google Patents

Abstract

PURPOSE:To obtain high resolution with respect to a pattern on a body to be processed when a chemical amplification type resist material is used. CONSTITUTION:The entire body of a main body 2 of an applying and developing device is covered with a covering body. A neutralization reaction chamber 6, into which acidic gas is supplied, is provided at an air intake port 51. A filter part 81 for removing particles and a sucking means 82 are provided beneath the chamber 6. When external air passes through the neutralization reaction chamber 6, weak acid property is provided by the neutralizing reaction of alkali component such as ammonia and amine in the air and the acidic gas in this constitution. Since acid is generated by exposure in a chemical amplification type resist film and modification occurs, but the modification is not hindered in this constitution.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist processing apparatus for performing resist processing on, for example, a semiconductor wafer.

[0002]

2. Description of the Related Art Generally, a semiconductor wafer (hereinafter referred to as "wafer") is used in a photoresist processing step in semiconductor manufacturing.
Say. ) A resist is applied on a thin film such as SiO ₂ formed on the above, the resist film is exposed with a predetermined pattern and then developed to form a mask pattern.

In order to perform such processing, a coating / developing apparatus which is a resist processing apparatus in which coating and developing steps are collectively performed is used. This apparatus is, for example, a hydrophobic treatment (adhesion treatment) unit for increasing the adhesion between the wafer and the resist, a coating unit for coating the resist film on the wafer, and a heating treatment for heating the resist-coated wafer. And a developing unit for developing the exposed wafer are provided along both sides of the transfer path of the wafer transfer arm along the transfer path, and the wafer loaded by the transfer arm has a hydrophobic processing section, a coating section, After passing through the heat treatment section, the wafer which is exposed by an external exposure device and then conveyed again by the conveying arm is developed in the developing section.

By the way, with the recent rapid integration of devices, the photolithography technique has been improved. For example, in the case of DRAM, a line width of about 0.8 to 0.9 μm is required for a 4M DRAM pattern, g-line or i-line is used as a light source for exposure, and novolak is used as a resist material. A system resin is used.

However, next-generation devices, such as 1
In order to deal with DRAMs having a capacity of 6 M, 64 M or more, it is necessary to shorten the wavelength of the light source, and far infrared rays such as excimer laser light are considered to be promising. However, since the light absorptivity of the novolac resin for such short-wavelength light is considerably large, the perpendicularity of the resist shape is poor, and therefore research on resist materials has been actively conducted.

Therefore, recently, a chemically amplified resist material has been proposed and studied. This chemically amplified resist material produces an acid from the photosensitizer when exposed to light, and this acid diffuses by heat treatment to act as a catalyst, decomposing the base resin which is the main component of the resist material, and molecular structure. To make it soluble or insoluble in a developing solution.

Specific examples of such a resist material are as follows: (1) A hydroxyl group in a polymer such as polyvinylphenol is blocked with an alkyl group or a silyl group, and the block is removed with an acid to restore alkali solubility. 2) A substance having a dissolution inhibiting effect is mixed with a novolak resin, and the dissolution inhibiting component is decomposed and modified by the catalytic action of an acid generated by exposure to restore or accelerate the solubility. (3) An acid generator, a crosslinking agent and There is known a type in which a resist material is composed of a base resin, a crosslinking agent cures (crosslinks) the base resin by an acid-catalyzed condensation reaction, and the crosslinking reaction significantly reduces the solubility in an alkaline aqueous solution.

Therefore, when a resist film of this kind is used, one molecule of the catalyst contributes to a plurality of chemical reactions, and therefore, in principle, compared with a conventional resist film in which the dissolution rate in a developing solution is changed only by irradiation light. Since the photosensitivity is high and the light transmittance in the short wavelength region is high, the light intensity distribution in the film thickness direction can be relaxed even when an excimer laser beam having a short exposure wavelength is used, and as a result, a line width of 0.3 μm level is obtained. It is also possible to deal with.

[0009]

However, when forming a pattern on the above-mentioned chemically amplified resist film,
In the process of heating and developing after exposing the resist film, the phenomenon that the planar shape and the shape in the depth direction of the pattern deteriorate may occur. For example, in the case of the positive type (1) described above, as shown in FIG. 6, the insolubilized layer 12 is formed on the surface of the exposed portion 11 of the resist film 1, and the insolubilized layer 13 is formed on the portion to be dissolved by the developing solution. Will be formed. Reference numeral 14 is an unexposed portion.

As one of the reasons for this, a very small amount of ammonia contained in the air, ethylenediamine used for paint on walls, or HMDS used for hydrophobic treatment.
The alkaline components such as amine generated from (hexamethyldisilazane) come into contact with the acid near the surface of the resist film,
It is considered that the above-mentioned catalytic reaction due to the acid is suppressed.

The present invention has been made under such circumstances, and an object thereof is to provide a resist processing apparatus capable of obtaining high resolution.

[0012]

According to a first aspect of the invention, a chemically amplified resist film in which an acid is generated by exposure to change the exposed portion is used, and an object to be processed coated with the resist film is exposed. In a resist processing apparatus for performing post-development, an air inlet and a loading / unloading port for an object to be processed are provided, and a cover body that covers the entire body of the resist processing apparatus is provided, and an acidic gas is supplied to the air inlet. A neutralization reaction chamber and a suction means for sucking air outside the cover body into the cover body through the neutralization reaction chamber, and the alkaline component contained in the air is removed by the acidic gas. Harmonize,
It is characterized by suppressing a neutralization reaction between an alkaline component and an acid in the resist film.

According to a second aspect of the present invention, a chemically amplified resist film is used, in which an acid is generated by exposure and the exposed portion is altered.
In a resist processing apparatus that performs development after exposing a processed object coated with this resist film, a cover body that has a loading / unloading port for the processed object, covers the entire resist processing apparatus main body, and stores an acidic solution And a means for feeding air into the neutralization reaction tank by sucking the air outside the cover body, and the air that has passed through the neutralization reaction tank is the cover.
It is configured to be supplied into the body, and neutralizes the alkaline component contained in the air with the acidic solution, and suppresses the neutralization reaction between the alkaline component and the acid in the resist film. .

According to a third aspect of the present invention, the coating section for coating the resist film on the object to be processed is provided in the main body of the resist processing apparatus.

[0015]

The object to be processed coated with the resist film is conveyed to the exposure device and exposed to light, whereby an acid is generated in the exposed portion of the resist film. Next, the object to be treated is subjected to heat treatment, for example, in the heat treatment section, and at this time, the acid diffuses and the exposed portion becomes soluble or insoluble in the developing solution.

Here, the entire resist processing apparatus main body is covered with a cover body, and external air is taken into the apparatus main body through the neutralization reaction chamber, but an acidic gas is supplied to the neutralization reaction chamber. Therefore, the alkaline component in the air such as ammonia reacts with the acid component and is removed. Alternatively, the alkaline component in the air is removed by the acidic solution in the neutralization reaction tank. Therefore, the catalytic reaction by the acid in the resist film is not hindered, and a good pattern shape can be obtained.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1, FIG. 2 and FIG. 3 are vertical sectional front views of a coating and developing apparatus which is a resist processing apparatus according to an embodiment of the present invention.
FIG. 3 is a schematic perspective view and a schematic plan view showing the inside. In this embodiment, the coating / developing apparatus main body (resist processing apparatus main body) 2
Before and after the loading / unloading unit 2 for the wafer W which is the object to be processed
1 and 22 are respectively arranged in series to form a coating and developing device. The loading / unloading unit parts 21 and 22 are, for example, X,
Transfer arms 21a and 22a movable in Y, Z, and θ directions
A mounting stage 23 for the wafer carrier c and the like are provided.

At the center of the coating / developing apparatus main body 2, as shown in FIG. 2, there is formed a wafer transfer path 31 made of, for example, a guide rail and extending in the front-rear direction.
Is provided with a transfer arm 3 for transferring the wafer W. On both sides of the transport path 31, the hydrophobic treatment section 4 is provided.
1, a coating unit 42, a heat treatment unit 43, a cooling unit 44, a developing unit 45, and the like are provided.

The hydrophobizing unit 41 is, for example, HMDS.
Is used to make the wafer surface hydrophobic and thereby improve the adhesion of the resist film to the wafer surface. The coating unit 42 drops a chemically amplified liquid resist material obtained by blocking a polymer such as polyvinylphenol with an alkyl group onto the surface of the wafer and spins the wafer to uniformly coat the entire surface of the wafer. Is configured as follows.

The heat treatment section 43 is composed of a heating plate or the like for heat-treating the wafer to a predetermined temperature, and evaporates the solvent contained in the resist material coated on the wafer surface or heats the resist film after exposure. This is for diffusing the acid generated during exposure. Since the heat treatment unit 43 has a longer treatment time than the other treatment units, a plurality of heat treatment units 43 are provided, for example, in order to improve the throughput. The cooling unit 44 is for cooling the hydrophobized wafer to a predetermined temperature before being transferred to the coating unit 42. The developing section 45 is for developing the wafer that has gone through the heat treatment section 43 after exposure with, for example, an alkaline developing solution.

The layout of each of these processing units is appropriately designed. For example, if a plurality of shelves are formed on one side or both sides of the transport path 31 and each processing unit is assigned to each shelf, space is saved and the height is increased. Throughput can be increased. In this example, a power supply system 24 is provided above the coating / developing apparatus main body 2.
Are arranged.

The coating / developing apparatus main body 2 is entirely covered with a cover body 5, and an air intake port 51 is formed on the upper surface side of the cover body 5, and the front and rear sides, that is, At the boundary between the carry-in / out unit parts 21 and 22,
Wafer loading / unloading ports 25 and 26 (not visible in FIG. 2) are formed. However, the whole body being covered with the cover body 5 means that there may be some gap between the cover body 5 and the outside, but as described later, the atmosphere surrounding the wafer is the air atmosphere sucked from the filter unit. It should be configured in. Further, in this embodiment, the loading / unloading unit portions 21 and 22 are
Also, except for the wafer loading / unloading port, it is covered with the cover body 5. The cover body 5 does not have to be an integral body, and may be a combination of separate bodies in consideration of ease of maintenance and transportation.

At the air intake port 51 of the cover body 5, a mesh-shaped air intake plate 52 for air intake.
And three neutralization reaction chambers 6 are provided below the air intake plate 52, for example, in the front-rear direction. The neutralization reaction chamber 6 has an extremely low concentration of an alkaline component such as ammonia contained in the air, which does not hinder the catalytic action of the acid generated in the resist film, for example, several p.
This is for suppressing the pressure to be equal to or lower than pb, and is configured by stacking, for example, three ventilation chambers 61 to 63 below.

A gas diffusion plate 64 provided with a large number of gas diffusion openings 64a, 65a is provided between the ventilation chambers 61-63.
The air is separated by 65, and the air taken into the uppermost ventilation chamber 61 is sequentially diffused through the gas diffusion plates 64 and 65 and flows downward. Further, the gas diffusion opening 64a,
By forming 65a on the gas diffusion plates 64 and 65 so that their positions are displaced from each other, the air is gradually and uniformly diffused.

The uppermost ventilation chamber 61 is provided with a gas supply pipe 71 for supplying an acid gas such as phosphoric acid gas, and the gas supply pipe 71 is uniformly provided in the ventilation chamber 61. In order to supply the acidic gas to the, the tip is formed by branching into a plurality of comb-like shapes. A gas mixing chamber 72 for adjusting the acidic gas supplied into the ventilation chamber 61 to a uniform concentration is connected to the base end side of the gas supply pipe 71, and an upstream side of the gas mixing chamber 72 is connected to the gas mixing chamber 72. A gas generation source 74 is connected via a valve 73, and an air cylinder 76 is connected via a valve 75.

The gas generating source 74 is for generating an acidic gas, and is composed of a gas cylinder into which an acidic gas is injected, or means for obtaining a phosphoric acid gas by vaporizing the solution using a phosphoric acid solution as a source. It Further, the air cylinder 76 supplies air for diluting the acidic gas.

The bottom of the neutralization reaction chamber 6, that is, the lowermost ventilation chamber 6
On the lower side of 3, there is provided a suction means 82 composed of a filter portion 81 and a fan, which are sequentially stacked from the top. The filter portion 81 is for removing particles contained in the air, and is formed by bending a sheet body made of glass fiber into a bellows shape.

Further, the suction means 8 of the coating and developing apparatus main body 2
A gas collecting pipe 91 is provided on the lower side of 2, and the outlet side of the gas collecting pipe 91 is connected to the gas concentration measuring means 92. The gas concentration measuring means 92 periodically measures the concentration of the alkaline component in the air by, for example, the ion chromatography method.

Furthermore, in this embodiment, based on the output signal of the gas concentration measuring means 92, that is, the concentration of the alkaline component in the air, the valve 73 is controlled to open and close to control the supply amount of the acidic gas from the gas generating source 74. In addition, a control means 93 for controlling the opening / closing of the valve 75 to control the amount of air supplied from the air cylinder 76 is provided. However, when the concentration of the alkaline component in the air does not fluctuate significantly, for example, the operator confirms the measurement value of the gas measuring means 92 which is periodically obtained, and a predetermined input is made by a keyboard or the like. Accordingly, the opening / closing control of the valves 73 and 75 may be performed via the control unit 93. In this embodiment, the neutralization reaction chamber 6 is formed not only in the coating / developing apparatus main body 2 but also in the upper portions of the carry-in / out unit units 21 and 22.

Next, the operation of the above embodiment will be described. First, the unprocessed wafer is transferred to the hydrophobization processing section 41 via one of the loading / unloading unit section 21 and the transfer arm 3 in the coating / developing apparatus main body 2, and the hydrophobization processing is performed. Subsequently, this wafer is cooled in a cooling unit 44, and then a chemically amplified resist material is applied to the surface in a coating unit 42, and then is subjected to heat treatment in a heat treatment unit 43.

The wafer having the resist film formed on the surface in this manner is exposed by an exposure device (not shown) separately provided via the other loading / unloading unit section 22, and the coating / developing main body is exposed via the loading / unloading unit section 22. It is conveyed to the heat treatment 52 in the No. 2. In the chemically amplified resist film, an acid is generated in the exposed portion, and the heat treatment in the heat treatment 52 causes the acid to diffuse to cause an acid catalytic reaction. As a result, for example, an alkyl group that has blocked the polymer. It becomes soluble in the alkaline solution.

The outside air (for example, the air in the clean room) often contains a small amount of alkaline components such as ammonia and amine generated from the paint on the wall, but this outside air is sucked. Neutralization reaction chamber 6 by means 82
Also, the liquid is applied through the filter portion 81 and sucked into the developing device main body 2.

Here, in the neutralization reaction chamber 6, an acidic gas having a predetermined concentration, that is, a concentration slightly higher than the concentration of the alkaline component in the outside air, is supplied to the uppermost ventilation chamber 61 from the gas supply pipe 71. The acid gas is supplied and the neutralization reaction between the acidic gas and the alkaline component in the air is performed. At this time, the air and the acidic gas uniformly diffuse through the ventilation chambers 61 to 63 as described above, so that the neutralization reaction is also uniformly performed. Therefore, this neutralization reaction removes the alkaline component in the air to make it weakly acidic. Further, the particles contained in the air are surely removed by the filter portion 81, and the inside of the apparatus is kept in a clean state with a small number of particles.

The air thus taken into the apparatus is periodically collected by the gas collecting pipe 91, and the concentration of acid / alkali components contained in the air is measured by the gas concentration measuring means 92. The measured value is input to the control means 93 directly or through the operation of the operator. An open / close signal is output from the control means 93 to the valves 73 and 75 based on the measured concentration of acid / alkali components in the air, and the amount of acid gas supplied from the gas generation source 74 and the air cylinder 76 are supplied. The amount of air taken is controlled.

The acid gas and the air whose supply amounts are controlled in this manner are mixed in the gas mixing chamber 72 to adjust the concentration of the acid gas with air, and the gas is supplied from the gas supply pipe 71. The concentration of the acidic gas supplied to the chamber 61 is controlled so that the alkaline component contained in the air can be efficiently removed.

Since the alkaline component contained in the air is removed by the neutralization reaction with the acidic gas in the neutralization reaction chamber 6, the acid in the resist film is neutralized in the coating and developing apparatus. Is suppressed, and the exposed portion is surely denatured, for example, alkali-solubilized, and as a result, the predetermined pattern is obtained with high accuracy by developing the wafer surface with an alkaline developing solution. In this embodiment, after the resist film is applied, it is placed in an atmosphere having an extremely low alkali component concentration until it is carried out from the carry-in / out port, so that the adsorption of the alkali component to the resist film surface portion is suppressed, and thus Also from this point, the above-mentioned adverse effect on the acid is small.

In the above, various kinds of chemically amplified resist materials can be used. Then, for example, as a resist material, a photoresist containing polyvinylphenol whose hydroxyl group is partially protected by t-BOC as a dissolution inhibitor and triphenylsulfonium triflate as an acid generator is used. Coating in atmospheres around 1PPb and around 10PPb,
When it was left for a time corresponding to the time of staying in the developing device, it passed the acceptance criterion of the line width ± 0.3% of the pattern in the former case, but the pattern collapsed significantly in the latter case. Therefore, in this resist material, the ammonia concentration is 1 PPb.
It may be the following, but it is more preferably 0.7 PPb or less.

The present invention is not limited to the above embodiment, but may be configured as shown in FIG. 4, for example. In this embodiment, the neutralization reaction chamber 10 in which the agitation fan 102 is provided in order from the top at the air intake port 51
1, a diffusion filter section 103 made of, for example, glass fiber wool, a suction means 82, and a filter section 81 for removing particles are provided in a stacked manner, and a plurality of them are provided on the peripheral side of the neutralization reaction chamber 101. The gas supply pipe 71 is configured so that the acidic gas flows in from a location.

Further, inside the main body 2 of the coating / developing apparatus, a sensor 104 for detecting the concentration of the alkaline component in the air taken into the apparatus is provided, and a control means 93 provided outside the apparatus. It is connected to the.

Also in this embodiment, the neutralization reaction chamber 101
The alkaline component in the air is removed by the neutralization reaction between the alkaline component contained in the air and the acidic gas. Here, in the neutralization reaction chamber 101, a stirring fan 102
The air and the acid gas are uniformly diffused by the filter 103, and when they pass through the diffusion filter portion 103, they are diffused by the filter 103 acting as a resistor.
The neutralization reaction proceeds efficiently, and the alkaline component in the air is effectively removed.

The concentration of acid / alkali components contained in the air in the apparatus is constantly detected by the sensor 104, and based on this detection signal, the control means 93 outputs an opening / closing signal to the valves 73 and 75 to output the acidity. The gas concentration is adjusted. When the acidic gas is used as described above, the humidifying means may be used to humidify the aeration chamber, thereby promoting the neutralization reaction.

Further, in the present invention, an acidic solution may be used instead of the acidic gas. FIG. 5 is a view showing such an embodiment. In this embodiment, an intake passage 94 formed of an intake pipe having a plurality of intake ports 94a opening to the outside of the cover body 5 is provided. The road 94 is a cover body 5.
It is piped in the ventilation chamber 95 inside. Further, in the intake passage 94, an air supply means 96, such as a blower, for sucking outside air from the intake port 94a and sending the air to the neutralization reaction tank described later.
Is provided.

A neutralization reaction tank 97 storing an acidic solution, for example, a phosphoric acid solution having a predetermined concentration, is arranged in the aeration chamber 95, and the outlet side of the intake passage 94 is the neutralization reaction tank 97.
It is immersed inside. The outlet side of the intake passage 94 is branched into, for example, a comb shape, and a large number of ejection holes 94 are provided so that the air passing through the intake passage 94 is diffused into the neutralization reaction tank 97.
b.

Further, the neutralization reaction tank 97 is provided with a circulation path 98 for circulating the acidic solution, and for example, pure water or an acidic solution of a predetermined concentration for adjusting the concentration of the acidic solution is provided in the circulation path 98. A concentration adjusting unit 98a having a solution injecting unit and the like and a circulation pump 98b are provided so that the acidic solution in the neutralization reaction tank 97 is circulated constantly or periodically so that the concentration becomes a predetermined concentration. Adjust to.

According to such an embodiment, since the outside air is taken in by the air supply means 96 and diffused into the neutralization reaction tank 97, the alkaline component in the air reacts with the acidic solution and is neutralized. The same effect as that of the above-described embodiment can be obtained.
The air diffused from the neutralization reaction tank 97 is sucked into the cover body 5 through the filter portion 81 by the suction means 82, for example. However, the neutralization reaction tank 97 is a cover body 5.
The air may be provided outside the device, or the air from which the alkaline components have been removed by being diffused may be taken into the cover body 5.

In the present invention, the coating / developing apparatus main body 2
The position of the suction means 82 is not limited to the above-described embodiment in order to suck the air therein, but may be provided on the floor of the coating / developing apparatus main body 2, for example.

The present invention can also be applied to the case where the coating device and the developing device are separated, and further, the coating and developing device and the exposure section are connected, for example, via a conveying path. In this case, the whole body may be covered with a cover body to provide a neutralization reaction chamber or a neutralization reaction tank in the cover body. The object to be processed may be, for example, a glass substrate for LCD other than the wafer.

[0048]

According to the present invention, the resist apparatus main body is covered with a cover body, and an alkaline component such as ammonia or amine contained in the outside air is removed by an acidic gas or an acidic solution,
Since the catalyst reaction of the acid generated after exposure in the chemically amplified resist film is not disturbed, high resolution can be obtained and a pattern can be accurately formed. Therefore, the characteristics of the chemically amplified resist film can be sufficiently brought out, and it is very effective for a fine pattern.

[Brief description of drawings]

FIG. 1 is a vertical sectional front view showing an embodiment of the present invention.

FIG. 2 is a schematic perspective view showing an embodiment of the present invention.

FIG. 3 is a schematic plan view showing the inside of a coating / developing apparatus according to an embodiment of the present invention.

FIG. 4 is a vertical sectional front view showing another embodiment of the present invention.

FIG. 5 is a vertical sectional front view showing still another embodiment of the present invention.

FIG. 6 is an explanatory diagram showing how a resist film is developed by a conventional apparatus.

[Explanation of symbols]

 2 coating / developing apparatus main body 41 hydrophobizing processing section 42 coating section 43 heat processing section 44 cooling section 45 developing section 5 cover body 6 neutralization reaction chamber 61, 62, 63 aeration chamber 71 gas supply pipe 72 gas mixing chamber 74 gas generation Source 81 Filter section 82 Suction means 92 Gas concentration measuring means 93 Control means

Front page continuation (72) Inventor Takahiko Moriya 1 Komukai Toshiba-cho, Sachi-ku, Kawasaki-shi, Kanagawa Toshiba R & D Center, Ltd. (72) Inventor Yoshihide Kato Komu-shi Toshiba-cho, Kawasaki-shi, Kanagawa No. 1 Incorporated company Toshiba Research & Development Center (72) Inventor Rennobu Onishi No. 1 Komukai Toshiba-cho, Kouki-ku, Kawasaki City, Kanagawa Prefecture Incorporated Toshiba Research & Development Center (72) Inventor Junichi Kitano Shinjuku, Tokyo 2-3-1, Nishi-Shinjuku, Tokyo Electron Ltd. (72) Inventor Misako Saito 2-3-1, Nishi-Shinjuku, Shinjuku-ku, Tokyo Within Tokyo Electron Ltd.

Claims (3)

[Claims] 1. A resist processing apparatus that uses a chemically amplified resist film in which an acid is generated by exposure to change the exposed portion and exposes an object to be processed coated with the resist film and then develops the film. A cover body that has a port and a loading / unloading port for the object to be processed, and covers the entire main body of the resist processing apparatus; a neutralization reaction chamber that is provided in the air intake port and to which an acidic gas is supplied; Suction means for sucking air into the cover body through the neutralization reaction chamber, wherein the alkaline component contained in the air is neutralized by the acidic gas, and the alkaline component and the resist film A resist processing apparatus, which suppresses the neutralization reaction with the acid of. 2. A resist processing apparatus that uses a chemically amplified resist film in which an acid is generated by exposure to change the exposed portion and exposes an object to be processed coated with the resist film and then develops the processed object. A cover body that has a body loading / unloading port and covers the entire main body of the resist processing apparatus, a neutralization reaction tank that stores an acidic solution, and air outside the cover body that is sucked into the neutralization reaction tank. And an air supply unit for supplying air into the cover body, wherein the air passing through the neutralization reaction tank is supplied to the cover body, and an alkaline component contained in the air is neutralized by the acidic solution. A resist processing apparatus, which suppresses a neutralization reaction between an alkaline component and an acid in the resist film. 3. The resist processing apparatus according to claim 1 or 2, wherein a coating section for coating the resist film on the object to be processed is provided in the resist processing apparatus main body.