JPH07134963A - Sample inclining device for electron microscope - Google Patents

Sample inclining device for electron microscope

Info

Publication number
JPH07134963A
JPH07134963A JP5279275A JP27927593A JPH07134963A JP H07134963 A JPH07134963 A JP H07134963A JP 5279275 A JP5279275 A JP 5279275A JP 27927593 A JP27927593 A JP 27927593A JP H07134963 A JPH07134963 A JP H07134963A
Authority
JP
Japan
Prior art keywords
sample
electron microscope
ion beam
shaft
tilting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5279275A
Other languages
Japanese (ja)
Other versions
JP3404090B2 (en
Inventor
Motohide Ukiana
基英 浮穴
Hidemi Koike
英巳 小池
Norie Yaguchi
紀恵 矢口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Instruments Engineering Co Ltd
Hitachi Ltd
Original Assignee
Hitachi Instruments Engineering Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Instruments Engineering Co Ltd, Hitachi Ltd filed Critical Hitachi Instruments Engineering Co Ltd
Priority to JP27927593A priority Critical patent/JP3404090B2/en
Publication of JPH07134963A publication Critical patent/JPH07134963A/en
Application granted granted Critical
Publication of JP3404090B2 publication Critical patent/JP3404090B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To provide a sample inclining device by which a sample processed by a focusing ion beam can be efficiently observed by means of an electron microscope. CONSTITUTION:A sample inclining device for an electron microscope is constructed of a sample inclining device 3 installed in the electron microscope and a sample holder 7, which consists of an outer shaft 8 and an inner shaft 9 carrying a sample 17. In the external end of the outer shaft 8, a knob 13 rotating the inner shaft 9 is arranged, and by this knob 13, positioning of the processing position can be precisely carried out when the sample 17 is processed by a focusing ion beam device. In this way, the sample holder 17 can be used for both of the focusing ion beam device and the electron microscope, so that processing and observation of the sample can be carried out quickly, and the sample can be inclined at a large angle.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は電子顕微鏡の試料傾斜装
置に係わり、特に集束イオンビームで加工した試料を効
率的に電子顕微鏡で観察できる試料傾斜装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sample tilting device for an electron microscope, and more particularly to a sample tilting device for efficiently observing a sample processed by a focused ion beam with an electron microscope.

【0002】[0002]

【従来の技術】電子顕微鏡を用いて試料を観察する場
合、試料の厚さは、電子線透過可能な0.1μm 以下の
薄膜(厚さは電子ビームの加速電圧よって異なる)とし
なければならず、特に半導体試料の場合は、集束イオン
ビーム装置で薄膜に加工している。集束イオンビームで
加工した試料を電子顕微鏡で観察しようとする時は、試
料の載せ替え作業が行われ、もし、電子顕微鏡で観察し
て加工の仕方が不充分であった場合は、再度、試料を載
せ替え、加工をやり直さなければならず非常に煩わしい
思いをしている。また、近年、高分解能観察を追求する
傾向にあり、従って対物レンズのポールピースギャップ
は狭くなり、試料の大角度傾斜が行えにくくなってい
る。
2. Description of the Related Art When observing a sample with an electron microscope, the thickness of the sample must be a thin film of 0.1 .mu.m or less (the thickness depends on the accelerating voltage of the electron beam) capable of transmitting an electron beam. Especially, in the case of a semiconductor sample, it is processed into a thin film by a focused ion beam device. When observing a sample processed with a focused ion beam with an electron microscope, the sample is replaced, and if it is observed with an electron microscope and the processing method is insufficient, the sample is re-tested. I have to replace them and reprocess them, which is very annoying. Further, in recent years, there is a tendency to pursue high-resolution observation, so that the pole piece gap of the objective lens becomes narrow, and it becomes difficult to tilt the sample at a large angle.

【0003】[0003]

【発明が解決しようとする課題】集束イオンビーム装置
で試料を薄膜に加工した後、試料の載せ替え作業を行わ
ずに、電子顕微鏡で観察できるようにすることであり、
集束イオンビームによる加工を繰り返し行っても、電子
顕微鏡による観察が効率的に行えるようにすることであ
る。また、狭い対物レンズのポールピースギャップ内に
おいても、大角度傾斜で試料の観察を行うことである。
SUMMARY OF THE INVENTION To process a sample into a thin film with a focused ion beam apparatus and then to allow observation with an electron microscope without performing a sample remounting operation,
Even if the processing with the focused ion beam is repeated, the observation with the electron microscope can be efficiently performed. Further, the sample should be observed with a large angle inclination even within the pole piece gap of the narrow objective lens.

【0004】[0004]

【課題を解決するための手段】本発明では、試料を載置
した中軸と、該中軸と中心を共用した外軸で構成し、外
軸の後端に中軸を回転させる手段を設けた試料傾斜装置
を、集束イオンビーム装置と電子顕微鏡の両方に装着で
きるようにした。集束イオンビーム装置でイオンビーム
を照射する時は、中軸の先端の欠損部に載置されている
試料を90°回転させ、電子顕微鏡で電子ビームを照射
する時は、試料を90°反転させた。前記の動作を繰り
返し行っても、試料のイオンビーム光軸と電子ビーム光
軸は、中軸の中心で直角に交差しており、さらに、中軸
の回転は、ストッパーによって90°の角度が正確に位
置決めされているので、位置を再現することが容易に行
える。また、中軸には粗い動きの回転、すなわち試料傾
斜を、外軸には細かい動きの回転すなわち試料傾斜を与
え、両方の回転を合成して、試料の大角度傾斜を可能と
した。何故なら、狭い対物レンズポールピースギャップ
内において、外径の大きな外軸に対し、外径の小さな中
軸の回転は、より大きな回転、すなわち、より大きな傾
斜角が得られるからである。又、外軸には、試料から発
生するX線を取り出すための欠損部を設けている。
SUMMARY OF THE INVENTION In the present invention, a sample tilt including a center shaft on which a sample is placed and an outer shaft sharing a center with the center shaft, and a means for rotating the center shaft at a rear end of the outer shaft is provided. The device was made compatible with both the focused ion beam device and the electron microscope. When irradiating the ion beam with the focused ion beam device, the sample placed on the defect at the tip of the central shaft was rotated by 90 °, and when irradiating the electron beam with the electron microscope, the sample was inverted by 90 °. . Even if the above operation is repeated, the ion beam optical axis and the electron beam optical axis of the sample intersect at a right angle at the center of the center axis. Further, the rotation of the center axis is accurately positioned at an angle of 90 ° by the stopper. Therefore, the position can be easily reproduced. Further, coarse rotation, that is, sample inclination is given to the center axis, and fine movement rotation, that is, sample inclination is given to the outer axis, and both rotations are combined to enable large-angle inclination of the sample. This is because in the narrow objective lens pole piece gap, rotation of the outer shaft having a large outer diameter with respect to the outer shaft having a small outer diameter results in larger rotation, that is, a larger tilt angle. Further, the outer shaft is provided with a defect portion for taking out X-rays generated from the sample.

【0005】[0005]

【作用】上記構成によれば、試料の載せ替え作業を行わ
ずに、集束イオンビーム装置で試料を加工したそのまま
の保持状態で、電子顕微鏡に挿入し観察することができ
る。試料の加工位置と観察位置は90°回転という簡単
な手順で繰り返し再現することができるので、加工と観
察の繰り返しが迅速に行える。また、中軸によって±4
5°程度の粗動傾斜を行った後、外軸によって±15°
程度の微動傾斜を行えば、合成すると±60°の大角度
傾斜が可能となる。又、外軸の欠損部からX線を取り出
し、X線分析を行うことも可能となる。
According to the above construction, the sample can be inserted into the electron microscope for observation without being replaced, and the sample can be inserted into the electron microscope while being held as it is after being processed by the focused ion beam apparatus. Since the processing position and the observation position of the sample can be repeatedly reproduced by a simple procedure of 90 ° rotation, the processing and the observation can be repeated quickly. Also, ± 4 depending on the center axis
After performing coarse movement tilt of about 5 °, ± 15 ° by the outer shaft
If a slight movement tilt is performed, a large angle tilt of ± 60 ° becomes possible when combined. It is also possible to take out X-rays from the defective portion of the outer shaft and perform X-ray analysis.

【0006】[0006]

【実施例】本発明の一実施例を図面により説明する。図
1において、電子顕微鏡試料室内の真空室1を構成する
壁2には、試料傾斜装置3が耐真空的に取り付けられて
いる。試料傾斜装置3は、基筒3A,球状体部4,首振
回転運動機構5,回転体6から成り、回転体6を回転さ
せて試料を傾斜させるものである。基筒3Aには、首振
回転運動機構5によって球状体部4を中心に首振回転運
動する回転体6が耐真空的に挿入されている。試料ホー
ルダ7は、中空軸状の外軸8及び外軸8と中心を共用し
た中軸9から成り、電子線光軸10と直交するように配
置され、回転体6を通って真空室1の外部から内部へと
耐真空的に貫通している。試料ホールダ7の先端部、つ
まり外軸8と中軸9の上下がカットされた薄板部8′,
9′は、対物レンズの上部ポールピース11及び下部ポ
ールピース12の間に位置している。外軸8の外端に設
けられている穴15に、中軸9を回転されるつまみ13
に固着されている位置決めピン14が係合し、中軸9の
先端の薄板部9′の傾斜は阻止されている。尚、穴15
は必要に応じ複数個設けられており、そのうちの2個は
ピッチ90°の間隔となっている。外軸8の先端の薄板
部8′には欠損部16Aが、中軸9の先端の薄板部9′
には欠損部16Bが設けられている。中軸9の欠損部1
6Bには試料17が接着剤、又はばねなどで固定されて
おり、試料17の観察部18が電子線光軸10の交点に
正確に位置づけられるよう、ピポット19を介して試料
位置づけ部材20と接触している。次に試料傾斜装置3
を集束イオンビーム装置に装着した一実施例を、図3を
用いて説明する。集束イオンビーム装置試料室の真空室
21を構成する壁22には、試料傾斜装置3が耐真空的
に取り付けられている。試料傾斜装置3と試料ホールダ
7の詳細は、前述の通りなので省略する。真空室21の
もう一方の壁22′には、二次電子検出器24が耐真空
的に取り付けられ、真空室21内の対物レンズ23を通
過するイオンビーム光軸25は試料17と直交してい
る。このような構成を有する試料傾斜装置において、初
めに集束イオンビーム装置における試料作成を例に動作
を説明する。
An embodiment of the present invention will be described with reference to the drawings. In FIG. 1, a sample tilting device 3 is attached to a wall 2 which constitutes a vacuum chamber 1 in an electron microscope sample chamber in a vacuum resistant manner. The sample tilting device 3 is composed of a base cylinder 3A, a spherical body part 4, a swinging rotary motion mechanism 5, and a rotating body 6, and rotates the rotating body 6 to tilt the sample. In the base cylinder 3A, a rotary body 6 that pivotally rotates about the spherical body portion 4 by a swinging motion mechanism 5 is inserted in a vacuum resistant manner. The sample holder 7 is composed of an outer shaft 8 having a hollow shaft shape and an inner shaft 9 sharing the center with the outer shaft 8. The sample holder 7 is arranged so as to be orthogonal to the electron beam optical axis 10 and passes through the rotating body 6 to outside the vacuum chamber 1. From the inside to the inside in a vacuum resistant manner. A thin plate portion 8 ', which is formed by cutting the top and bottom of the sample holder 7, that is, the outer shaft 8 and the center shaft 9,
9'is located between the upper pole piece 11 and the lower pole piece 12 of the objective lens. A knob 13 for rotating the center shaft 9 is provided in a hole 15 provided at the outer end of the outer shaft 8.
The positioning pin 14 fixed to the shaft engages with it, and the thin plate portion 9 ′ at the tip of the center shaft 9 is prevented from tilting. The hole 15
Are provided as needed, and two of them are provided at a pitch of 90 °. The thin plate portion 8 ′ at the tip of the outer shaft 8 has a defect 16 </ b> A and the thin plate portion 9 ′ at the tip of the center shaft 9.
The defective portion 16B is provided in the. Missing part 1 of central shaft 9
The sample 17 is fixed to the 6B with an adhesive or a spring, and the observation part 18 of the sample 17 is brought into contact with the sample positioning member 20 via the pivot 19 so that the observation part 18 of the sample 17 can be accurately positioned at the intersection of the electron beam optical axis 10. is doing. Next, the sample tilting device 3
An embodiment in which the above is mounted on a focused ion beam device will be described with reference to FIG. The sample tilting device 3 is attached to the wall 22 that constitutes the vacuum chamber 21 of the focused ion beam device sample chamber in a vacuum resistant manner. Details of the sample tilting device 3 and the sample holder 7 are omitted because they are as described above. A secondary electron detector 24 is attached to the other wall 22 ′ of the vacuum chamber 21 in a vacuum resistant manner, and an ion beam optical axis 25 passing through the objective lens 23 in the vacuum chamber 21 is orthogonal to the sample 17. There is. The operation of the sample tilting device having such a configuration will be described first by taking a sample preparation in the focused ion beam device as an example.

【0007】試料傾斜装置3に試料ホールダ7が挿入さ
れている状態で、中軸9を回転させるつまみ13を反時
計方向に90°回転させ、図2(b)に示すように中軸9
の先端の欠損部16Bを上に向けてイオンビーム光軸2
5と直交させる。首振回転運動機構5によって欠損部1
6Bに固定されている試料17の位置合わせを行い、イ
オンビーム光軸25と直交させる。試料上に照射された
イオンは、試料をスパッターすることにより観察部18
の加工ができる。一方スパッターリング時に放出される
電子又はイオンは、二次粒子検出器24により検出さ
れ、この電気信号によって図示は省略してあるが、CR
T上にイオン照射部の像が記録される。この像から正確
に加工位置を決め、試料17の観察部18を0.1μm以
下の薄膜となるように加工する。加工が終わった試料1
7は、試料ホールダ7ごと引き抜き、電子顕微鏡に取り
付けられている試料傾斜装置3に挿入する。電子顕微鏡
を所定の手順により観察できる状態にする。次に中軸9
を回転させるつまみ13を時計方向に90°反転させ、
図2(a)に示すように中軸9の先端の欠損部16Bを水
平状態にする。試料17の観察部18は電子線光軸10
と直交するので、薄膜部に電子線を透過させて観察する
ことができる。試料17の観察部18に電子線を照射す
ると、X線が発生するが外軸8の先端の欠損部16Aか
らX線を取り出し、X線分析を行うことができる。この
ように試料の載せ替え作業を行わず、集束イオンビーム
装置と電子顕微鏡の両方に取り付けられるので、再度加
工し直すといった場合でも迅速に行え、観察効率が非常
に良くなる。次に電子顕微鏡における試料の大角度傾斜
の観察について説明する。試料17の観察部18が水平
状態を基準にして、中軸9を回転させるつまみ13をプ
ラス方向、又はマイナス方向に5°ないし10°ピッチ
で回転させ、試料17を5°ないし10°ピッチで粗動
傾斜させる。このピッチで外軸8の外端に穴15を設け
ておけば、位置決めも簡単に行うことができる。更に、
外軸8で微動傾斜させ合成すると、大角度傾斜での観察
が行える。対物レンズの上部ポールピース11と、下部
ポールピース12の間のギャップが5mm程度とし、外軸
8の外径を直径8mm程度とすると、±15°傾斜が可能
となり、中軸9の外径を直径5mm程度とすると、±45
°傾斜が可能となり、合成すると±60°の大角度傾斜
が得られる。尚、外軸8と中軸9の外径の端面は、必要
に応じて面取りされているので、ポールピースと接触す
ることは起きない。
With the sample holder 7 inserted in the sample tilting device 3, the knob 13 for rotating the center shaft 9 is rotated 90 ° counterclockwise, and as shown in FIG.
The ion beam optical axis 2 with the defect 16B at the tip of the
Make it orthogonal to 5. The oscillating rotary motion mechanism 5 causes the defective portion 1
The sample 17 fixed to 6B is aligned with the ion beam optical axis 25 at right angles. The ions irradiated onto the sample are observed by the observation section 18 by sputtering the sample.
Can be processed. On the other hand, the electrons or ions emitted at the time of sputtering are detected by the secondary particle detector 24, and although not shown in the figure by this electric signal, CR
An image of the ion irradiation part is recorded on T. The processing position is accurately determined from this image, and the observation portion 18 of the sample 17 is processed so as to form a thin film of 0.1 μm or less. Sample 1 after processing
The sample holder 7 is pulled out together with the sample holder 7 and inserted into the sample tilting device 3 attached to the electron microscope. The electron microscope is made ready for observation by a predetermined procedure. Next, the central shaft 9
Rotate the knob 13 to rotate 90 degrees clockwise,
As shown in FIG. 2 (a), the defective portion 16B at the tip of the center shaft 9 is made horizontal. The observation part 18 of the sample 17 is the electron beam optical axis 10.
Since it is orthogonal to, the electron beam can be transmitted through the thin film portion for observation. When the observation section 18 of the sample 17 is irradiated with an electron beam, X-rays are generated, but the X-rays can be taken out from the defective portion 16A at the tip of the outer shaft 8 for X-ray analysis. Since the sample can be mounted on both the focused ion beam device and the electron microscope without performing the remounting work in this way, even when reworking is performed quickly, the observation efficiency becomes very good. Next, observation of a large-angle tilt of the sample with an electron microscope will be described. With respect to the horizontal state of the observation unit 18 of the sample 17, the knob 13 for rotating the center shaft 9 is rotated in the plus direction or the minus direction at a pitch of 5 ° to 10 °, and the sample 17 is coarsely moved at a pitch of 5 ° to 10 °. Inclining dynamically. If holes 15 are provided at the outer end of the outer shaft 8 at this pitch, positioning can be performed easily. Furthermore,
If the outer shaft 8 is finely tilted and combined, observation at a large angle tilt can be performed. If the gap between the upper pole piece 11 and the lower pole piece 12 of the objective lens is set to about 5 mm and the outer diameter of the outer shaft 8 is set to about 8 mm, it is possible to incline ± 15 ° and the outer diameter of the middle shaft 9 is set to the diameter. If it is about 5 mm, it is ± 45
Tilt is possible, and when combined, a large angle tilt of ± 60 ° is obtained. Since the outer diameter end faces of the outer shaft 8 and the center shaft 9 are chamfered as necessary, they do not come into contact with the pole pieces.

【0008】[0008]

【発明の効果】上記したように、本発明によれば、次の
ような効果が達成される。
As described above, according to the present invention, the following effects can be achieved.

【0009】(1)試料ホールダは、集束イオンビーム
装置と電子顕微鏡に共用することができる。
(1) The sample holder can be shared by the focused ion beam device and the electron microscope.

【0010】(2)加工する時と観察する時の試料位置
はワンタッチで切り換えられ、位置決めも正確に行え
る。
(2) The sample position at the time of processing and at the time of observation can be switched with one touch, and positioning can be performed accurately.

【0011】(3)試料の載せ替え作業を行わずに加工
と観察ができるので、繰り返し加工と観察が迅速に行え
る。
(3) Since the processing and the observation can be performed without performing the sample remounting work, the repeated processing and the observation can be quickly performed.

【0012】(4)試料の載せ替え作業がないので、取
扱いが簡単となり、不注意による試料破損などのトラブ
ルが未然に防げる。
(4) Since there is no sample remounting work, handling is simple and troubles such as sample damage due to carelessness can be prevented.

【0013】(5)外軸にイオンビームを通すための通
路を設けなくてもよいので、機械的強度を損なわずにす
む。
(5) Since it is not necessary to provide a passage for passing the ion beam on the outer shaft, the mechanical strength can be maintained.

【0014】(6)試料を固定している部分に大気圧に
よる歪みが加わらない構造となっているで、歪みによる
ドリフトが発生しない。
(6) Since the structure in which the sample is fixed is not strained by atmospheric pressure, drift due to strain does not occur.

【0015】(7)試料の大角度傾斜が実現できる。(7) A large angle tilt of the sample can be realized.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示す電子顕微鏡用試料傾斜
装置の縦断面図である。
FIG. 1 is a vertical sectional view of a sample tilting device for an electron microscope showing an embodiment of the present invention.

【図2】図1の試料ホールダ要部の(a)観察方向および
(b)加工方向の拡大平面図である。
FIG. 2 (a) Observation direction of the main part of the sample holder in FIG.
(b) It is an enlarged plan view of the processing direction.

【図3】本発明の一実施例を示す集束イオンビーム装置
の要部縦断面図である。
FIG. 3 is a longitudinal sectional view of a main part of a focused ion beam device showing an embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1,21…真空室、3…試料傾斜装置、5…首振回転運
動機構、7…試料ホールダ、8…外軸、9…中軸、10
…電子線光軸、11,12…対物レンズのポールピー
ス、16A,16B…欠損部、17…試料、18…観察
部、23…対物レンズ、24…二次粒子検出器、25…
イオンビーム光軸。
1, 21 ... Vacuum chamber, 3 ... Sample tilting device, 5 ... Swing rotation movement mechanism, 7 ... Sample holder, 8 ... Outer shaft, 9 ... Middle shaft, 10
... Electron beam optical axis, 11, 12 ... Pole piece of objective lens, 16A, 16B ... Defect portion, 17 ... Sample, 18 ... Observation portion, 23 ... Objective lens, 24 ... Secondary particle detector, 25 ...
Ion beam optical axis.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 小池 英巳 茨城県勝田市大字市毛882番地 株式会社 日立製作所計測器事業部内 (72)発明者 矢口 紀恵 茨城県勝田市堀口字長久保832番地2 日 立計測エンジニアリング株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hidemi Koike 882 Ichige, Ita, Katsuta, Ibaraki Hitachi Ltd. Measuring Instruments Division (72) Inventor Kie Yaguchi 832 Nagakubo, Horiguchi, Katsuta, Ibaraki Prefect. Measurement Engineering Co., Ltd.

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】試料を載置した試料ホールダを電子線光軸
と直交する方向から回転可能に挿入し、真空シールで気
密を保ちながら試料ホールダを軸心方向に移動させて試
料の移動を行うようにした装置において、前記、試料ホ
ールダは、試料を載置した中軸と、該中軸と中心を共用
した外軸で構成され、外軸の後端に中軸を回転させる手
段を設け、試料の傾斜を行えるようにしたことを特徴と
する電子顕微鏡用試料傾斜装置。
1. A sample holder on which a sample is mounted is rotatably inserted from a direction orthogonal to an electron beam optical axis, and a sample is moved by moving the sample holder in an axial direction while maintaining airtightness with a vacuum seal. In the apparatus as described above, the sample holder is composed of an inner shaft on which a sample is placed and an outer shaft sharing a center with the inner shaft, and a means for rotating the inner shaft is provided at a rear end of the outer shaft to incline the sample. A sample tilting device for an electron microscope, which is capable of performing the following.
【請求項2】前記、中軸には粗い動きの回転を与え、前
記、外軸には細かい動きの回転を与え、両方の回転を合
成することによって試料の大角度傾斜が行えるようにし
たことを特徴とする請求項1記載の電子顕微鏡用試料傾
斜装置。
2. A large-angle tilt of a sample can be performed by giving a rotation of coarse movement to the center axis and a rotation of fine movement to the outer axis, and combining both rotations. The sample tilting device for an electron microscope according to claim 1.
【請求項3】前記、電子顕微鏡用試料傾斜装置を集束イ
オンビーム装置に装着できるように構成し、前記、試料
ホールダを集束イオンビーム装置と電子顕微鏡に共用で
きるようにして、集束イオンビーム加工された試料を載
せ替えせずに、電子顕微鏡による観察が行えるようにし
たことを特徴とする請求項1記載の電子顕微鏡用試料傾
斜装置。
3. The sample tilting device for an electron microscope is configured so that it can be mounted on a focused ion beam device, and the sample holder can be used for both the focused ion beam device and the electron microscope, and the focused ion beam is processed. The sample tilting device for an electron microscope according to claim 1, wherein the sample can be observed by an electron microscope without remounting the sample.
【請求項4】前記、中軸には試料にイオンビームを照射
するための欠損部と、前記、外軸には試料から発生する
X線を取り出すための欠損部が設けられていることを特
徴とする請求項1ないし3のいずれか1項に記載の電子
顕微鏡用試料傾斜装置。
4. A defect portion for irradiating a sample with an ion beam is provided on the central shaft, and a defect portion for taking out X-rays generated from the sample is provided on the outer shaft. The sample tilting device for an electron microscope according to any one of claims 1 to 3.
【請求項5】前記、試料のイオンビーム光軸と電子ビー
ム光軸が、前記中軸の中心で直角に交差するように構成
されていることを特徴とする請求項1ないし3のいずれ
か1項に記載の電子顕微鏡用試料傾斜装置。
5. The ion beam optical axis of the sample and the electron beam optical axis of the sample are configured so as to intersect at a right angle at the center of the center axis. The sample inclining device for an electron microscope according to.
【請求項6】前記、集束イオンビーム装置でイオンビー
ムを照射する時は、前記中軸を90°回転させ、前記、電
子顕微鏡で電子ビームを照射する時は、前記中軸を90
°反転させられるようにしたことを特徴とする請求項1
ないし5のいずれか1項に記載の電子顕微鏡用試料傾斜
装置。
6. When irradiating an ion beam with the focused ion beam apparatus, the center shaft is rotated by 90 °, and when irradiating the electron beam with the electron microscope, the center shaft is rotated by 90 °.
2. The structure according to claim 1, wherein the structure can be inverted.
6. The sample tilting device for an electron microscope according to any one of items 1 to 5.
【請求項7】前記、中軸の回転は、ストッパーによって
90°の角度が位置決めされ、イオンビーム照射位置と
電子ビーム照射位置が繰り返し切り替えても正確に再現
できるようにしたことを特徴とする請求項1ないし6の
いずれか1項に記載の電子顕微鏡用試料傾斜装置。
7. The rotation of the center shaft is positioned at an angle of 90 ° by a stopper so that it can be accurately reproduced even if the ion beam irradiation position and the electron beam irradiation position are repeatedly switched. 7. The sample tilting device for an electron microscope according to any one of 1 to 6.
JP27927593A 1993-11-09 1993-11-09 Sample tilting device for electron microscope Expired - Lifetime JP3404090B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27927593A JP3404090B2 (en) 1993-11-09 1993-11-09 Sample tilting device for electron microscope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27927593A JP3404090B2 (en) 1993-11-09 1993-11-09 Sample tilting device for electron microscope

Publications (2)

Publication Number Publication Date
JPH07134963A true JPH07134963A (en) 1995-05-23
JP3404090B2 JP3404090B2 (en) 2003-05-06

Family

ID=17608899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27927593A Expired - Lifetime JP3404090B2 (en) 1993-11-09 1993-11-09 Sample tilting device for electron microscope

Country Status (1)

Country Link
JP (1) JP3404090B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09199069A (en) * 1996-01-22 1997-07-31 Ricoh Co Ltd Sample holder for cross sectional tem observation
JP2004079511A (en) * 2002-05-31 2004-03-11 Fei Co Method for tilting beam column of beam system, its apparatus, and beam system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09199069A (en) * 1996-01-22 1997-07-31 Ricoh Co Ltd Sample holder for cross sectional tem observation
JP2004079511A (en) * 2002-05-31 2004-03-11 Fei Co Method for tilting beam column of beam system, its apparatus, and beam system
JP2011146399A (en) * 2002-05-31 2011-07-28 Fei Co Method for tilting beam column of beam system, apparatus therefor, and beam system

Also Published As

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