JPH07130830A - Semiconductor manufacturing appartatus - Google Patents
Semiconductor manufacturing appartatusInfo
- Publication number
- JPH07130830A JPH07130830A JP30097193A JP30097193A JPH07130830A JP H07130830 A JPH07130830 A JP H07130830A JP 30097193 A JP30097193 A JP 30097193A JP 30097193 A JP30097193 A JP 30097193A JP H07130830 A JPH07130830 A JP H07130830A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- electrostatic chuck
- tank
- temperature
- temperature control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、静電吸着によってウエ
ハを固定する載置台を備えたドライエッチング装置やプ
ラズマＣＶＤ(Chemical Vapor Deposition) 装置等の半
導体製造装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus such as a dry etching apparatus or a plasma CVD (Chemical Vapor Deposition) apparatus having a mounting table for fixing a wafer by electrostatic attraction.
【０００２】[0002]
【従来の技術】近年、ウエハ上に形成される素子が高度
に微細化されるに伴い、ドライエッチングやプラズマＣ
ＶＤ等の微細加工技術の分野においては、ウエハの温度
を高精度に制御することが求められている。例えばドラ
イエッチングの分野で最近注目を集めている低温エッチ
ングでは、低温に温度制御されている載置台にウエハを
密着させて、ウエハを低温に保持する技術が重要となっ
ている。このため最近では載置台として、ウエハとの密
着性が良くウエハを効率良く温度制御できる、静電吸着
を利用した所謂静電チャックを用いた載置台が盛んに使
用されている。2. Description of the Related Art In recent years, as elements formed on a wafer are highly miniaturized, dry etching and plasma C
In the field of fine processing technology such as VD, it is required to control the temperature of the wafer with high accuracy. For example, in low-temperature etching, which has recently attracted attention in the field of dry etching, it is important to hold the wafer at a low temperature by bringing the wafer into close contact with a mounting table whose temperature is controlled at a low temperature. For this reason, recently, as a mounting table, a mounting table using a so-called electrostatic chuck utilizing electrostatic attraction, which has good adhesion to the wafer and can efficiently control the temperature of the wafer, has been widely used.
【０００３】図４は従来の静電チャックを用いた載置台
の一例であり、ウエハＳを載置した状態を示してある。
図示したように載置台５０は、例えば温度制御槽５７
と、温度制御槽５７の上部に固着された静電チャック５
１とで構成されている。FIG. 4 shows an example of a mounting table using a conventional electrostatic chuck, and shows a state in which a wafer S is mounted.
As shown in the figure, the mounting table 50 is, for example, a temperature control tank 57.
And the electrostatic chuck 5 fixed to the upper part of the temperature control tank 57.
It is composed of 1 and 1.
【０００４】温度制御槽５７は、その内部に冷媒が導入
される中空室５８を有しており、この中空室５８に連通
する状態で冷媒の導入管５９と排出管６０とが接続され
ている。また温度制御槽５７は導電材料で形成されてい
ると共に高周波電源６１が接続され、この載置台５０を
備えた半導体製造装置において、例えばプラズマを励起
し制御するための電極ともなっている。The temperature control tank 57 has a hollow chamber 58 into which a refrigerant is introduced, and a refrigerant introduction pipe 59 and a discharge pipe 60 are connected in a state of communicating with the hollow chamber 58. . Further, the temperature control tank 57 is made of a conductive material and is connected to a high frequency power supply 61, and also serves as an electrode for exciting and controlling plasma, for example, in a semiconductor manufacturing apparatus equipped with the mounting table 50.
【０００５】一方、静電チャック５１は、ヒータ５３の
上方に絶縁体５４を介して静電吸着用の平板電極５２を
配置し、これら全体をさらに絶縁体５４で被覆してな
る。この平板電極５２には、後述する如く絶縁体５４に
誘電分極現象を誘起するための直流電源５５が接続さ
れ、またヒータ５３には交流電源５６が接続されてい
る。On the other hand, in the electrostatic chuck 51, a flat plate electrode 52 for electrostatic attraction is arranged above a heater 53 with an insulator 54 interposed therebetween, and the whole is covered with an insulator 54. A DC power supply 55 for inducing a dielectric polarization phenomenon in an insulator 54 is connected to the flat plate electrode 52 as described later, and an AC power supply 56 is connected to the heater 53.
【０００６】なお、静電チャック５１の上面にはＮ2 ガ
ス等の不活性ガスの吹き出し溝（図せず）が形成されて
いる。この吹き出し溝は、温度制御槽５７によって温度
制御されている載置台５０と、後述する如く載置台５０
の静電チャック５１に静電吸着されたウエハＳとの熱伝
導率を高めるために設けられるものであり、吹き出し溝
を介してウエハＳの裏面側に不活性ガスが供給されるよ
うになっている。A discharge groove (not shown) for an inert gas such as N 2 gas is formed on the upper surface of the electrostatic chuck 51. The blowing groove is provided on the mounting table 50 whose temperature is controlled by the temperature control tank 57 and on the mounting table 50 as described later.
It is provided in order to increase the thermal conductivity with the wafer S electrostatically attracted to the electrostatic chuck 51, and the inert gas is supplied to the back surface side of the wafer S via the blowing groove. There is.
【０００７】上記静電チャック５１においては、直流電
源５５より平板電極５２に電圧が印加されると、それに
よって生じる電位差によって絶縁体５４に誘電分極現象
が起こる。そして、平板電極５２上と異符号の電荷が絶
縁体５４の上面に励起され、絶縁体５４の上面に載置さ
れたウエハＳとの間で静電気力が生じてウエハＳが吸着
保持される。In the electrostatic chuck 51, when a voltage is applied from the DC power supply 55 to the plate electrode 52, a dielectric polarization phenomenon occurs in the insulator 54 due to a potential difference caused by the voltage. Then, a charge having a sign different from that of the flat plate electrode 52 is excited on the upper surface of the insulator 54, and electrostatic force is generated between the flat electrode 52 and the wafer S mounted on the upper surface of the insulator 54 to attract and hold the wafer S.
【０００８】従来ではこのような静電チャック５１は、
図示したようにネジ６２によってあるいは図示しないが
シリコン系等の接着剤で温度制御槽５７に固定される。
そして、静電チャック５１に保持されたウエハＳは、中
空室５８内の冷媒と又はヒータ５３と、静電チャック５
１を介して熱交換を行うことにより温度制御される。Conventionally, such an electrostatic chuck 51 is
As shown in the figure, it is fixed to the temperature control tank 57 by a screw 62 or an adhesive such as a silicon-based adhesive (not shown).
Then, the wafer S held on the electrostatic chuck 51 is cooled by the refrigerant in the hollow chamber 58 or the heater 53, and the electrostatic chuck 5 is held.
The temperature is controlled by exchanging heat via 1.
【０００９】[0009]
【発明が解決しようとする課題】ところが、静電チャッ
ク５１と温度制御槽５７との固定にシリコン系等の接着
剤を用いた場合には、接着剤が耐えうる温度範囲が狭い
ため、ウエハＳを極低温から高温までの広範囲に温度制
御することができないという欠点があった。また載置台
５０によるウエハＳの温度制御は真空中で行われるの
で、図４に示したように温度制御槽５７と静電チャック
５１とをネジ６２によって固定しても、温度制御槽５７
の上面と静電チャック５１の下面との間が真空断熱され
てしまってその部分で良好な熱伝導がなされなかった。However, when an adhesive such as a silicon-based adhesive is used to fix the electrostatic chuck 51 and the temperature control tank 57, the temperature range that the adhesive can withstand is narrow. However, there is a drawback that the temperature cannot be controlled in a wide range from extremely low temperature to high temperature. Further, since the temperature control of the wafer S by the mounting table 50 is performed in a vacuum, even if the temperature control tank 57 and the electrostatic chuck 51 are fixed with the screw 62 as shown in FIG.
Since the upper surface of the above and the lower surface of the electrostatic chuck 51 were vacuum-insulated, good heat conduction was not achieved in that portion.
【００１０】図５は図４の載置台５０を備えた半導体装
置内を真空とし、温度制御槽５７の中空室５８内に−１
２０℃の冷媒を循環させたときのウエハＳの冷却状態を
測定した結果を示したものである。図中□は冷媒の排出
管６０の入口における温度、△は静電チャック５１の温
度、またはウエハＳの温度を示している。In FIG. 5, the inside of the semiconductor device equipped with the mounting table 50 of FIG.
It shows the result of measuring the cooling state of the wafer S when the coolant of 20 ° C. is circulated. In the figure, □ indicates the temperature of the refrigerant at the inlet of the discharge pipe 60, and Δ indicates the temperature of the electrostatic chuck 51 or the temperature of the wafer S.
【００１１】図から静電チャック５１の温度と排出管６
０の入口の温度との間には、冷媒の循環を開始してから
４０分を経過した後も大きな隔たりがあり、温度制御槽
５７と静電チャック５１との間で良好な熱伝導がなされ
ていないことがわかる。それに伴って載置台５０に載置
されたウエハＳも、裏面にＮ2 ガスが供給され、静電吸
着された後も効率良く冷却されていない。このように、
上記した載置台５０では温度制御槽５７の上面と静電チ
ャック５１の下面との間は真空断熱により良好な熱伝導
がなされないため、ウエハＳが効率良く温度制御されな
いという問題が生じていた。From the figure, the temperature of the electrostatic chuck 51 and the discharge pipe 6
There is a large gap between the temperature of the inlet of 0 and the temperature of the inlet of 0 even after 40 minutes have passed from the start of the circulation of the refrigerant, and good heat conduction is achieved between the temperature control tank 57 and the electrostatic chuck 51. You can see that not. Along with this, the wafer S mounted on the mounting table 50 is not efficiently cooled even after the back surface is supplied with N 2 gas and electrostatically adsorbed. in this way,
In the mounting table 50 described above, good heat conduction is not performed between the upper surface of the temperature control tank 57 and the lower surface of the electrostatic chuck 51 due to vacuum heat insulation, so that the temperature of the wafer S is not efficiently controlled.
【００１２】さらに従来の載置台５０においては、半導
体製造装置の電極でもある温度制御槽５７が、全体が絶
縁体５４で被覆された静電チャック５１の下部に配置さ
れているので、温度制御槽５７からの高周波が絶縁体５
４に大きく影響されてウエハＳ全面に均一に印加されな
かった。このため、ウエハＳを例えばプラズマエッチン
グする場合にウエハＳ全面に均一にプラズマが発生せ
ず、プラズマの少ないところでエッチング速度が低下し
てしまうという問題も生じていた。Further, in the conventional mounting table 50, the temperature control tank 57, which is also the electrode of the semiconductor manufacturing apparatus, is arranged below the electrostatic chuck 51 which is entirely covered with the insulator 54. High frequency from 57 is insulator 5
4 was not greatly applied to the entire surface of the wafer S. For this reason, when the wafer S is plasma-etched, for example, plasma is not uniformly generated on the entire surface of the wafer S, and there is a problem in that the etching rate is reduced in a place where the plasma is small.
【００１３】本発明は上記課題に鑑みてなされたもので
あり、ウエハを極低温から高温までの広範囲で効率良く
温度制御することができ、かつウエハ全面に均一に高周
波を印加することができる載置台を備えた半導体製造装
置を提供することを目的としている。The present invention has been made in view of the above problems, and it is possible to efficiently control the temperature of a wafer in a wide range from extremely low temperature to high temperature and to uniformly apply a high frequency to the entire surface of the wafer. It is an object of the present invention to provide a semiconductor manufacturing apparatus equipped with a table.
【００１４】[0014]
【課題を解決するための手段】上記課題を解決するため
に第１の発明は、内部には冷媒が導入される中空室を有
しかつ上面が開口状に形成されてなる温度制御槽と、該
温度制御槽の上部に配置されかつウエハを静電吸着する
ための静電チャックとからなる載置台を備え、前記静電
チャックは、高周波印加用の電極とヒータと静電吸着用
の平板電極とが絶縁体を介して順次積層されると共にこ
れら全体が前記絶縁体で被覆されてなり、かつ下面が前
記温度制御槽の上面の開口を塞ぐ状態に配置されるよう
にしたものである。In order to solve the above problems, a first invention is a temperature control tank having a hollow chamber into which a refrigerant is introduced and having an upper surface formed in an opening shape, A mounting table, which is disposed above the temperature control tank and includes an electrostatic chuck for electrostatically adsorbing a wafer, is provided, and the electrostatic chuck includes an electrode for high frequency application, a heater, and a flat plate electrode for electrostatic adsorption. And are sequentially laminated via an insulator, and the whole of them is covered with the insulator, and the lower surface is arranged so as to close the opening of the upper surface of the temperature control tank.
【００１５】また第２の発明は、内部には冷媒が導入さ
れる中空室を有する下部槽と、該下部槽の上部に配置さ
れると共に内部に中空室を有しかつ上面が開口状に形成
されてなる上部槽とで構成される温度制御槽と、該温度
制御槽の上部に配置されかつウエハを静電吸着するため
の静電チャックとからなる載置台を備え、前記静電チャ
ックは、高周波印加用の電極とヒータと静電吸着用の平
板電極とが絶縁体を介して順次積層されると共にこれら
全体が前記絶縁体で被覆されてなり、かつ下面が前記上
部槽の上面の開口を塞ぐ状態で配置されるようにしたも
のである。A second aspect of the present invention is a lower tank having a hollow chamber into which a refrigerant is introduced, and a lower chamber which is disposed above the lower tank and has a hollow chamber inside and an upper surface formed in an open shape. A temperature control tank configured by an upper tank and an electrostatic chuck for electrostatically attracting a wafer, which is disposed on the temperature control tank, and the electrostatic chuck is provided. An electrode for high frequency application, a heater, and a flat plate electrode for electrostatic attraction are sequentially laminated with an insulator interposed therebetween, and the whole of these are covered with the insulator, and the lower surface of the electrode is an opening on the upper surface of the upper tank. It is arranged so as to be closed.
【００１６】[0016]
【作用】第１の発明によれば、静電チャック内のヒータ
の熱が載置台に静電吸着されたウエハに効率良く伝わ
る。また前記静電チャックの下面は、温度制御槽の中空
室内に導入される冷媒に直接接触することとなるので、
該冷媒と前記ウエハとの熱交換が極めて効率良く行われ
る。さらに高周波印加用の電極が前記静電チャック内に
設けられ、前記ウエハに近い位置に配置されているの
で、該ウエハ全面に均一に高周波が印加される。According to the first aspect of the invention, the heat of the heater in the electrostatic chuck is efficiently transferred to the wafer electrostatically attracted to the mounting table. Further, since the lower surface of the electrostatic chuck comes into direct contact with the refrigerant introduced into the hollow chamber of the temperature control tank,
The heat exchange between the coolant and the wafer is performed extremely efficiently. Further, since an electrode for applying a high frequency is provided in the electrostatic chuck and arranged at a position close to the wafer, the high frequency is uniformly applied to the entire surface of the wafer.
【００１７】また第２の発明によれば、静電吸着された
ウエハを高温処理する際には、上部槽によって下部槽内
の冷媒の温度が前記静電チャックに直接伝わらないの
で、前記ウエハとヒータとの熱交換が安定して行われ
る。また前記ウエハを低温処理する際には、前記下部槽
によって冷却された前記上部槽の中空室内の冷媒に、前
記静電チャックの下面が直接接接触することとなるの
で、前記ウエハは極めて効率良く冷却される。According to the second aspect of the invention, when the electrostatically adsorbed wafer is processed at a high temperature, the temperature of the refrigerant in the lower tank is not directly transmitted to the electrostatic chuck by the upper tank. The heat exchange with the heater is performed stably. Further, when the wafer is processed at a low temperature, the lower surface of the electrostatic chuck comes into direct contact with the refrigerant in the hollow chamber of the upper tank cooled by the lower tank, so that the wafer is extremely efficiently processed. To be cooled.
【００１８】[0018]
【実施例】以下、本発明に係る半導体製造装置の実施例
を図面に基づいて説明する。図１は第１の発明の半導体
製造装置の一例の要部断面図であり、載置台を示したも
のである。図示したようにこの載置台１０は、温度制御
槽２０と、温度制御槽２０の上部に配置された静電チャ
ック１１とで構成されている。温度制御槽２０は例えば
円板状をなし、内部に中空室２１を有している。Embodiments of the semiconductor manufacturing apparatus according to the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view of an essential part of an example of a semiconductor manufacturing apparatus according to the first invention, showing a mounting table. As shown in the figure, the mounting table 10 is composed of a temperature control tank 20 and an electrostatic chuck 11 arranged above the temperature control tank 20. The temperature control tank 20 has, for example, a disk shape and has a hollow chamber 21 inside.
【００１９】また温度制御槽２０は、その上部周縁から
内向きにフランジ２０ａが延設されており、フランジ２
０ａを除いて温度制御槽２０の上面は開口している。な
お、フランジ２０ａの上面には凹部２０ｂが設けられて
おり、凹部２０ｂ内には後述する如く静電チャック１１
との密着度を高めるためのガスケット２５が嵌め込まれ
ている。また温度制御槽２０には、上記中空室２１に連
通する状態で冷媒の導入管２２と排出管２３とが接続さ
れており、冷媒が導入管２２、中空室２１及び排出管２
３を通って循環するようになっている。Further, the temperature control tank 20 has a flange 20a extending inwardly from the upper peripheral edge thereof.
The upper surface of the temperature control tank 20 is open except for 0a. A recess 20b is provided on the upper surface of the flange 20a, and the electrostatic chuck 11 is provided in the recess 20b as described later.
A gasket 25 for increasing the degree of close contact with is fitted. Further, the temperature control tank 20 is connected to a refrigerant introduction pipe 22 and a discharge pipe 23 in a state of communicating with the hollow chamber 21, and the refrigerant is introduced into the hollow pipe 21 and the hollow chamber 21 and the discharge pipe 2.
It circulates through 3.
【００２０】一方、静電チャック１１は、後述する絶縁
体１５によって、例えば温度制御槽２０より若干小さい
径の円板上にそれより小さい径の円板を連設した形状に
形成されている。すなわち静電チャック１１は、高周波
印加用の電極１４とヒータ１３と静電吸着用の平板電極
１２とを絶縁体１５を介して順次積層すると共に、これ
ら全体を絶縁体１５で被覆することによって構成され
る。On the other hand, the electrostatic chuck 11 is formed by an insulator 15 which will be described later, for example, in such a shape that a disk having a diameter slightly smaller than that of the temperature control tank 20 is continuously provided with a disk having a diameter smaller than that. That is, the electrostatic chuck 11 is configured by sequentially stacking the electrode 14 for high frequency application, the heater 13, and the flat plate electrode 12 for electrostatic attraction via the insulator 15, and covering the whole with the insulator 15. To be done.
【００２１】図１では、例えば高周波印加用の電極１４
をヒータ１３及び静電吸着用の平板電極１２より広範囲
に設けた場合を示している。したがって、この実施例に
おいてはこれら電極１４、ヒータ１３及び平板電極１２
の積層体全体を被覆する絶縁体１５によって、静電チャ
ック１１は例えば大小の円板を連設した形状に形成され
ている。In FIG. 1, for example, an electrode 14 for applying high frequency is used.
Is shown in a wider area than the heater 13 and the plate electrode 12 for electrostatic attraction. Therefore, in this embodiment, the electrode 14, the heater 13 and the plate electrode 12 are used.
The electrostatic chuck 11 is formed, for example, in a shape in which large and small circular disks are arranged in series by the insulator 15 that covers the entire laminated body.
【００２２】これら電極１４、ヒータ１３及び平板電極
１２は例えば印刷等によって設けられ、この実施例にお
いてヒータ１３は例えば渦巻き状にパターン形成され
る。また、平板電極１２には絶縁体１５に誘電分極現象
を誘起するための直流電源１６が、ヒータ１３には交流
電源１８が、電極１４には高周波電源１７がそれぞれ接
続されている。The electrode 14, the heater 13 and the flat plate electrode 12 are provided by, for example, printing. In this embodiment, the heater 13 is formed in a spiral pattern. Further, a DC power supply 16 for inducing a dielectric polarization phenomenon in the insulator 15 is connected to the plate electrode 12, an AC power supply 18 is connected to the heater 13, and a high frequency power supply 17 is connected to the electrode 14.
【００２３】なお、絶縁体１５の上面には、図示しない
Ｎ2 ガス等の不活性ガスの吹き出し溝が形成されてお
り、吹き出し溝には例えばその略中心箇所に、図示しな
い不活性ガスの供給管が載置台４０の下方から接続され
ている。すなわち、不活性ガスの供給管は温度制御槽２
０とその上部に配置された静電チャック１１とを貫通す
る状態で吹き出し溝に接続されている。A blow-out groove for an inert gas such as N 2 gas (not shown) is formed on the upper surface of the insulator 15. The blow-out groove is supplied with an inert gas (not shown) at, for example, a substantially central portion thereof. The pipe is connected from below the mounting table 40. That is, the inert gas supply pipe is the temperature control tank 2
0 and the electrostatic chuck 11 arranged on the upper part thereof are connected to the blowing groove.
【００２４】このような静電チャック１１は、その下面
が温度制御槽２０の上面の開口２６を塞ぐ状態で配置さ
れる。そして、この状態で静電チャック１１の周縁が温
度制御槽２０にネジ２４止めされて、静電チャック１１
は温度制御槽２０の上部に固定される。またこの際、フ
ランジ２０ａの凹部２０ｂに嵌め込まれたガスケット２
５によって、静電チャック１１は温度制御槽２０に密着
度が高められた状態で取り付けられる。The electrostatic chuck 11 is arranged in such a manner that its lower surface closes the opening 26 on the upper surface of the temperature control tank 20. Then, in this state, the peripheral edge of the electrostatic chuck 11 is screwed to the temperature control tank 20 with the screw 24,
Is fixed to the upper part of the temperature control tank 20. Further, at this time, the gasket 2 fitted in the recess 20b of the flange 20a
5, the electrostatic chuck 11 is attached to the temperature control tank 20 in a state where the degree of adhesion is increased.
【００２５】上記の如く構成された載置台１０において
は、載置台１０の上面にウエハＳを載置して直流電源１
６より平板電極１２に電圧を印加すると、それにより生
じる電位差によって絶縁体１５に誘電分極現象が起こ
る。そして、平板電極１２上と異符号の電荷が絶縁体１
５の上面に励起され、ウエハＳとの間で静電気力が生じ
てウエハＳが吸着保持される。In the mounting table 10 configured as described above, the wafer S is mounted on the upper surface of the mounting table 10 and the DC power supply 1 is used.
When a voltage is applied to the plate electrode 12 from No. 6, a dielectric polarization phenomenon occurs in the insulator 15 due to the potential difference caused by the voltage. Then, charges having a sign different from that on the plate electrode 12 are applied to the insulator 1.
5 is excited on the upper surface of the wafer 5, electrostatic force is generated between the wafer 5 and the wafer S, and the wafer S is attracted and held.
【００２６】また高周波印加用の電極１４は静電チャッ
ク１１の絶縁体１５内に設けられており、ウエハＳに近
い位置に配置されている。そのため高周波電源１７より
電極１４に高周波電圧を印加すると、高周波は絶縁体１
５にあまり影響されずにウエハＳ全面に伝達される。つ
まり絶縁体１５による影響が少なくて済み、ウエハＳ全
面に均一に高周波が印加される。その結果、ウエハＳ全
面に対して均一にプラズマが発生することとなる。Further, the electrode 14 for applying high frequency is provided in the insulator 15 of the electrostatic chuck 11 and is arranged at a position close to the wafer S. Therefore, when a high-frequency voltage is applied from the high-frequency power source 17 to the electrode 14, the high-frequency voltage is applied to the insulator 1.
It is transmitted to the entire surface of the wafer S without being significantly affected by 5. That is, the influence of the insulator 15 is small, and the high frequency is uniformly applied to the entire surface of the wafer S. As a result, plasma is uniformly generated on the entire surface of the wafer S.
【００２７】さらにヒータ１３も静電チャック１１の絶
縁体１５内に設けられており、ウエハＳに近い位置に配
置されている。このため、ヒータ１３に交流電源１８よ
り電流を流すと、ヒータ１３とウエハＳとの間で熱交換
が速やかに行われ、ウエハＳは所定の温度に即座に加熱
される。Further, the heater 13 is also provided in the insulator 15 of the electrostatic chuck 11 and is arranged at a position close to the wafer S. Therefore, when an electric current is supplied from the AC power supply 18 to the heater 13, heat exchange is quickly performed between the heater 13 and the wafer S, and the wafer S is immediately heated to a predetermined temperature.
【００２８】また、静電チャック１１はその下面が温度
制御槽２０の上面の開口２６を塞ぐ状態で配置されるの
で、中空室２１内を冷媒を循環させると、静電チャック
１１の下面にその冷媒が直接接触する。つまり、静電チ
ャック１１自体が直接冷却されることとなるので、静電
吸着されたウエハＳと冷媒との熱交換が速やかに行わ
れ、ウエハＳは所定の温度に極めて効率良く冷却され
る。さらにウエハＳの冷却効率が向上することから、高
周波印加用の電極１４に高周波電圧を印加してプラズマ
を発生させた際のウエハＳの温度上昇も最小限にとどめ
られる。Further, since the lower surface of the electrostatic chuck 11 is arranged so as to close the opening 26 on the upper surface of the temperature control tank 20, when the refrigerant is circulated in the hollow chamber 21, the lower surface of the electrostatic chuck 11 is The refrigerant comes into direct contact. That is, since the electrostatic chuck 11 itself is directly cooled, the heat exchange between the electrostatically adsorbed wafer S and the coolant is promptly performed, and the wafer S is cooled to a predetermined temperature extremely efficiently. Further, since the cooling efficiency of the wafer S is improved, the temperature rise of the wafer S when a high frequency voltage is applied to the high frequency application electrode 14 to generate plasma can be minimized.
【００２９】したがってこの実施例によれば、載置台１
０に吸着保持されたウエハＳを極低温から高温までの広
い温度範囲で極めて効率良く温度制御することができ
る。なお、この実施例においては静電チャック１１と温
度制御槽２０との固定に耐久温度範囲の狭い接着剤を用
いていないので、このことによってもウエハＳの広い温
度範囲での温度制御が可能となる。しかもこの実施例で
は、ウエハＳ全面に対して均一にプラズマを発生させる
ことができるので、均一なエッチングを実現することが
できる。Therefore, according to this embodiment, the mounting table 1
The wafer S adsorbed and held at 0 can be temperature-controlled extremely efficiently in a wide temperature range from extremely low temperature to high temperature. In this embodiment, since the adhesive having a narrow endurance temperature range is not used for fixing the electrostatic chuck 11 and the temperature control tank 20, this also enables the temperature control of the wafer S in a wide temperature range. Become. Moreover, in this embodiment, since the plasma can be generated uniformly over the entire surface of the wafer S, uniform etching can be realized.
【００３０】図２、図３はそれぞれ、第２の発明の半導
体製造装置の一例を示した要部断面図、要部破断図であ
る。この実施例において、上記実施例と相異するのは温
度制御槽３１が、上下２層からなっている点と、静電チ
ャック４１のヒータ４３が複数の回路パターンに分割さ
れている点である。すなわち、温度制御槽３１は例えば
円板状をなし、下部槽３２とその上に形成された上部槽
３６から構成されている。FIG. 2 and FIG. 3 are a fragmentary sectional view and a fragmentary sectional view showing an example of the semiconductor manufacturing apparatus of the second invention, respectively. In this embodiment, what is different from the above embodiment is that the temperature control tank 31 is composed of upper and lower two layers and that the heater 43 of the electrostatic chuck 41 is divided into a plurality of circuit patterns. . That is, the temperature control tank 31 has, for example, a disc shape, and is composed of a lower tank 32 and an upper tank 36 formed thereon.
【００３１】下部槽３２は中空室３３を有しており、こ
の中空室３３に連通する状態で冷媒の導入管３４と排出
管３５とが接続されている。つまり、下部槽３２は上記
した実施例の温度制御槽２０と略同様に、冷媒が導入管
３４、中空室３３及び排出管３５を通って循環するよう
になっている。The lower tank 32 has a hollow chamber 33, and a refrigerant introducing pipe 34 and a discharge pipe 35 are connected in a state of communicating with the hollow chamber 33. That is, in the lower tank 32, the refrigerant circulates through the introduction pipe 34, the hollow chamber 33, and the discharge pipe 35, as in the temperature control tank 20 of the above-described embodiment.
【００３２】上部槽３６は、その下面が下部槽３２の上
面と共有する形で下部槽３２上に形成されている。この
上部槽３６も内部に中空室３７を有しており、その上部
周縁から内向きにフランジ３６ａが延設されている。そ
して、フランジ３６ａを除いて上部槽３６の上面は開口
している。すなわち温度制御槽３１の上面は開口状態に
形成されている。なお、フランジ３６ａの上面には凹部
３６ｂが設けられており、凹部３６ｂ内には上記実施例
と同様にガスケット２５が嵌め込まれている。またこの
上部槽３６には、中空室３７に連通する状態で冷媒の送
出管３８と取出管３９とが接続されており、さらに上部
槽３６には中空室３７を真空排気するための図示しない
排気機構が設けられている。The upper tank 36 is formed on the lower tank 32 such that the lower surface thereof shares the upper surface of the lower tank 32. This upper tank 36 also has a hollow chamber 37 inside, and a flange 36a extends inward from the upper peripheral edge thereof. The upper surface of the upper tank 36 is open except for the flange 36a. That is, the upper surface of the temperature control tank 31 is formed in an open state. A recess 36b is provided on the upper surface of the flange 36a, and the gasket 25 is fitted in the recess 36b as in the above-described embodiment. Further, a refrigerant delivery pipe 38 and a withdrawal pipe 39 are connected to the upper tank 36 in a state of communicating with the hollow chamber 37, and the upper tank 36 is further evacuated to evacuate the hollow chamber 37 by vacuum exhaust. A mechanism is provided.
【００３３】一方、静電チャック４１は、ヒータ４３除
いて上記実施例と同様に構成されている。すなわち、高
周波印加用の電極１４上に絶縁体１５を介して積層され
たヒータ４３は複数のパターンに分割され、各ヒータ４
３のパターンにはそれぞれ交流電源１８が接続されてい
る。図２では、ヒータ４３は例えば２つのパターンに形
成された場合を示している。なお図３では、高周波印加
用の電極１４に接続される高周波電源１７、ヒータ４３
に接続される交流電源１８及び静電吸着用の平板電極１
２に接続される直流電源１６を省略している。On the other hand, the electrostatic chuck 41 has the same structure as that of the above embodiment except for the heater 43. That is, the heater 43 laminated on the electrode 14 for high frequency application via the insulator 15 is divided into a plurality of patterns, and each heater 4
An AC power supply 18 is connected to each of the patterns of 3. FIG. 2 shows a case where the heater 43 is formed in, for example, two patterns. In FIG. 3, the high frequency power supply 17 and the heater 43 connected to the high frequency application electrode 14 are connected.
AC power source 18 and plate electrode 1 for electrostatic attraction connected to
The DC power supply 16 connected to 2 is omitted.
【００３４】このような静電チャック４１は、その下面
が上部槽３６の上面の開口４０を塞ぐ状態で配置され
る。そして、この状態で静電チャック４１の周縁が温度
制御槽３１にネジ２４止めされて、静電チャック４１は
温度制御槽３１の上部に固定される。またこの際、フラ
ンジ２０ａの凹部２０ｂに嵌め込まれたガスケット２５
によって、静電チャック４１は温度制御槽３１に密着度
が高められた状態で取り付けられる。The electrostatic chuck 41 is arranged in such a manner that its lower surface closes the opening 40 on the upper surface of the upper tank 36. Then, in this state, the peripheral edge of the electrostatic chuck 41 is screwed to the temperature control tank 31 by the screw 24, and the electrostatic chuck 41 is fixed to the upper portion of the temperature control tank 31. Further, at this time, the gasket 25 fitted in the recess 20b of the flange 20a.
Thus, the electrostatic chuck 41 is attached to the temperature control tank 31 in a state where the degree of adhesion is increased.
【００３５】上記の如く構成された載置台３０において
は、載置台３０の上面に吸着保持されたウエハＳを低温
で処理する場合、上部槽３６の送出管３８から中空室３
７に冷媒が導入される。この冷媒は熱伝導の良いものが
用いられ、例えば不凍液等が使用される。なお下部槽３
２には、上記実施例の温度制御槽２０の中空室２１内に
導入する冷媒が常時循環する。In the mounting table 30 constructed as described above, when the wafer S adsorbed and held on the upper surface of the mounting table 30 is processed at a low temperature, from the delivery pipe 38 of the upper tank 36 to the hollow chamber 3.
Refrigerant is introduced into 7. As this refrigerant, one having good heat conductivity is used, for example, an antifreezing liquid or the like is used. Lower tank 3
In 2, the refrigerant introduced into the hollow chamber 21 of the temperature control tank 20 of the above embodiment constantly circulates.
【００３６】上記したように、静電チャック４１はその
下面が上部槽３６の上面の開口４０を塞ぐ状態で配置さ
れるので、上部槽３６の中空室３７に冷媒が導入される
と、静電チャック４１の下面にその冷媒が直接接触す
る。上部槽３６内の冷媒は、下部槽３２内の冷媒によっ
て略同程度に冷却されており、したがって静電チャック
４１自体が上部槽３６内の冷媒によって直接冷却され
る。このため、静電吸着されたウエハＳと下部槽３２内
の冷媒との熱交換が上部槽３６の冷媒を介して速やかに
行われ、ウエハＳは所定の温度に極めて効率良く冷却さ
れる。As described above, the electrostatic chuck 41 is arranged such that the lower surface of the electrostatic chuck 41 closes the opening 40 on the upper surface of the upper tank 36. Therefore, when the refrigerant is introduced into the hollow chamber 37 of the upper tank 36, the electrostatic chuck 41 is electrostatically charged. The refrigerant directly contacts the lower surface of the chuck 41. The refrigerant in the upper tank 36 is cooled by the refrigerant in the lower tank 32 to substantially the same degree, and therefore the electrostatic chuck 41 itself is directly cooled by the refrigerant in the upper tank 36. Therefore, the heat exchange between the electrostatically adsorbed wafer S and the refrigerant in the lower tank 32 is promptly performed through the refrigerant in the upper tank 36, and the wafer S is cooled to a predetermined temperature extremely efficiently.
【００３７】また載置台３０の上面に吸着保持されたウ
エハＳを高温で処理する場合、上部槽３６の取出管３９
から中空室３７の冷媒が排出される。そして排気機構に
よって、中空室３７が真空排気される。なお、このとき
も下部槽３２には冷媒が常時循環されている。そして中
空室３７を真空とした状態でヒータ４３に交流電源１８
から電流を通流させてヒータ４３を所定の温度まで発熱
させる。When the wafer S sucked and held on the upper surface of the mounting table 30 is processed at a high temperature, the take-out pipe 39 of the upper tank 36 is used.
The refrigerant in the hollow chamber 37 is discharged from. Then, the hollow chamber 37 is evacuated by the exhaust mechanism. At this time also, the refrigerant is constantly circulated in the lower tank 32. Then, the AC power source 18 is supplied to the heater 43 while the hollow chamber 37 is in a vacuum state.
A current is passed through the heater 43 to heat the heater 43 to a predetermined temperature.
【００３８】この場合、静電チャック４１と下部槽３２
との間に真空状態の中空室３７が介在することとなり、
静電チャック４１と下部槽３２とが真空断熱される。そ
の結果、下部槽３２の中空室３３内を循環している冷媒
の温度が静電チャック４１に伝わらず、ヒータ４３の熱
が下部槽３２内の冷媒の温度に影響されずに載置台３０
上のウエハＳに安定して伝わる。また、静電チャック４
１と下部槽３２とが真空断熱されることにより、ヒータ
４３の熱が下部槽３２内の冷媒に伝わらず加熱されない
ので、加熱による冷媒の変質や、冷媒が気化することに
よる冷媒循環路内での圧力の変動が防止される。In this case, the electrostatic chuck 41 and the lower tank 32
A hollow chamber 37 in a vacuum state is interposed between
The electrostatic chuck 41 and the lower tank 32 are vacuum-insulated. As a result, the temperature of the refrigerant circulating in the hollow chamber 33 of the lower tank 32 is not transmitted to the electrostatic chuck 41, and the heat of the heater 43 is not affected by the temperature of the refrigerant in the lower tank 32.
It is stably transmitted to the upper wafer S. In addition, the electrostatic chuck 4
Since 1 and the lower tank 32 are vacuum-insulated, the heat of the heater 43 is not transferred to the refrigerant in the lower tank 32 and is not heated. Therefore, in the refrigerant circulation path due to the deterioration of the refrigerant due to heating or the evaporation of the refrigerant. Fluctuations in pressure are prevented.
【００３９】したがってこの実施例においても、載置台
３０に吸着保持されたウエハＳを極低温から高温までの
広い温度範囲で極めて効率良く温度制御することができ
る。しかも、下部槽３２内を循環する冷媒を供給する冷
凍機の負担を軽減することが可能となる。Therefore, also in this embodiment, the temperature of the wafer S sucked and held on the mounting table 30 can be controlled extremely efficiently in a wide temperature range from extremely low temperature to high temperature. Moreover, it is possible to reduce the load on the refrigerator that supplies the refrigerant circulating in the lower tank 32.
【００４０】またこの実施例では、静電チャック４１内
に設けられたヒータ４３が２つのパターンに分割されて
いるので、例えばウエハＳの周縁側と中心とのように部
分的にそれぞれ独立して温度制御することができる。し
たがって、ウエハＳをエッチングする場合には温度に依
存するエッチング速度を制御することが可能となり、均
一なエッチングを実現することができる。さらにこの実
施例においても、上記実施例と同様にウエハＳ全面に均
一に高周波を印加することができるので、ウエハＳ全面
に対してプラズマを均一に発生させることができ、ウエ
ハＳに均一に表面処理を施すことが可能となる。Further, in this embodiment, since the heater 43 provided in the electrostatic chuck 41 is divided into two patterns, for example, the peripheral side and the center of the wafer S are partially independent of each other. The temperature can be controlled. Therefore, when the wafer S is etched, the etching rate depending on the temperature can be controlled, and uniform etching can be realized. Further, also in this embodiment, since the high frequency can be uniformly applied to the entire surface of the wafer S as in the above embodiment, plasma can be uniformly generated on the entire surface of the wafer S, and the surface of the wafer S can be evenly distributed. It becomes possible to perform processing.
【００４１】[0041]
【発明の効果】以上説明したように第１の発明において
は、高周波印加用の電極とヒータとが静電吸着用の電極
とが静電チャック内に積層状態で設けられている。この
ため、載置台に静電吸着されたウエハ全面に均一に高周
波を印加することができると共に、前記ウエハを所定の
温度に速やかに加熱することができる。また、前記静電
チャックはその下面が温度制御槽内に導入される冷媒に
直接接触する状態で配置されるので、該ウエハを所定の
温度に極めて効率良く冷却することができる。As described above, in the first aspect of the invention, the electrode for high frequency application and the electrode for the heater and the electrode for electrostatic attraction are provided in the electrostatic chuck in a laminated state. Therefore, a high frequency can be uniformly applied to the entire surface of the wafer electrostatically attracted to the mounting table, and the wafer can be quickly heated to a predetermined temperature. Further, since the electrostatic chuck is arranged with its lower surface in direct contact with the coolant introduced into the temperature control tank, the wafer can be cooled to a predetermined temperature extremely efficiently.
【００４２】また第２の発明においては、温度制御槽が
上部槽と常時冷媒が導入されている下部槽とで構成され
ている。このため、載置台に静電吸着されたウエハを高
温処理する場合は、前記下部槽内の冷媒の温度が前記上
部槽によって静電チャックに直接伝わらないので、前記
ウエハを前記ヒータによって効率良く加熱することがで
きる。また、前記静電チャックはその下面が前記上部槽
の開口を塞ぐ状態で配置されるので、前記ウエハを低温
処理する場合は、前記上部槽内に冷媒を充填させること
により、前記ウエハを所定の温度に極めて効率良く冷却
することができる。In the second invention, the temperature control tank is composed of an upper tank and a lower tank in which the refrigerant is constantly introduced. Therefore, when the wafer electrostatically adsorbed on the mounting table is processed at a high temperature, the temperature of the refrigerant in the lower tank is not directly transmitted to the electrostatic chuck by the upper tank, so that the wafer is efficiently heated by the heater. can do. Also, since the lower surface of the electrostatic chuck closes the opening of the upper tank, when the wafer is processed at a low temperature, the upper tank is filled with a refrigerant so that the wafer has a predetermined size. It can be cooled to temperature very efficiently.
【００４３】したがって本発明によれば、一台の載置台
で、ウエハを吸着保持しかつこのウエハを極低温から高
温までの広い温度範囲で極めて効率良く温度制御するこ
とができ、前記ウエハに均一に表面処理を施すことが可
能となる。Therefore, according to the present invention, the wafer can be adsorbed and held by one mounting table, and the temperature of the wafer can be controlled extremely efficiently in a wide temperature range from extremely low temperature to high temperature, and the wafer can be evenly controlled. It is possible to apply a surface treatment to the.
【図１】第１の発明の半導体製造装置の一例を示した要
部断面図である。FIG. 1 is a cross-sectional view of essential parts showing an example of a semiconductor manufacturing apparatus according to a first invention.
【図２】第２の発明の半導体製造装置の一例を示した要
部断面図である。FIG. 2 is a cross-sectional view of essential parts showing an example of a semiconductor manufacturing apparatus of a second invention.
【図３】第２の発明の半導体製造装置の一例を示した破
断図である。FIG. 3 is a cutaway view showing an example of a semiconductor manufacturing apparatus of a second invention.
【図４】従来の載置台の一例を示した要部断面図であ
る。FIG. 4 is a cross-sectional view of essential parts showing an example of a conventional mounting table.
【図５】従来の載置台によるウエハの冷却状態を測定し
た結果を示したグラフである。FIG. 5 is a graph showing a result of measuring a cooling state of a wafer by a conventional mounting table.
１０、３０ 載置台 ２０、３１
温度制御槽 １１、４１ 静電チャック ２１、３３、
３７ 中空室 １２ 平板電極 ２６、４０
開口 １３、４３ ヒータ ３２ 下部槽 １４ 電極 ３６ 上部槽 １５ 絶縁体 Ｓ ウエハ10, 30 Mounting table 20, 31
Temperature control tank 11, 41 Electrostatic chuck 21, 33,
37 hollow chamber 12 flat plate electrode 26, 40
Opening 13, 43 Heater 32 Lower tank 14 Electrode 36 Upper tank 15 Insulator S Wafer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 門村 新吾 東京都品川区北品川６丁目７番35号 ソニ ー株式会社内 (72)発明者 佐藤 淳一 東京都品川区北品川６丁目７番35号 ソニ ー株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Shingo Kadomura 6-735 Kita-Shinagawa, Shinagawa-ku, Tokyo Sony Corporation (72) Inventor Junichi Sato 6-7-35 Kita-Shinagawa, Shinagawa-ku, Tokyo Inside Sony Corporation
Claims (2)
かつ上面が開口状に形成されてなる温度制御槽と、 該温度制御槽の上部に配置されかつウエハを静電吸着す
るための静電チャックとからなる載置台を備え、 前記静電チャックは、高周波印加用の電極とヒータと静
電吸着用の平板電極とが絶縁体を介して順次積層される
と共にこれら全体が前記絶縁体で被覆されてなり、かつ
下面が前記温度制御槽の上面の開口を塞ぐ状態に配置さ
れることを特徴とする半導体製造装置。1. A temperature control tank having a hollow chamber into which a refrigerant is introduced and having an upper surface formed in an opening shape, and arranged above the temperature control tank for electrostatically adsorbing a wafer. Of the electrostatic chuck, the electrostatic chuck comprises a high-frequency applying electrode, a heater, and a flat plate electrode for electrostatic attraction, which are sequentially laminated via an insulator, and the whole of the insulating chuck is insulated. A semiconductor manufacturing apparatus characterized in that it is covered with a body, and the lower surface is arranged so as to close the opening of the upper surface of the temperature control tank.
る下部槽と、該下部槽の上部に配置されると共に内部に
中空室を有しかつ上面が開口状に形成されてなる上部槽
とで構成される温度制御槽と、 該温度制御槽の上部に配置されかつウエハを静電吸着す
るための静電チャックとからなる載置台を備え、 前記静電チャックは、高周波印加用の電極とヒータと静
電吸着用の平板電極とが絶縁体を介して順次積層される
と共にこれら全体が前記絶縁体で被覆されてなり、かつ
下面が前記上部槽の上面の開口を塞ぐ状態で配置される
ことを特徴とする半導体製造装置。2. A lower tank having a hollow chamber into which a refrigerant is introduced, and an upper tank which is disposed above the lower tank and has a hollow chamber inside and whose upper surface is formed in an open shape. And a mounting table composed of an electrostatic chuck for electrostatically adsorbing a wafer, which is arranged above the temperature control tank, and the electrostatic chuck is an electrode for applying a high frequency. And a heater and a flat plate electrode for electrostatic attraction are sequentially laminated via an insulator, and the whole of them are covered with the insulator, and the lower surface is arranged so as to close the opening of the upper surface of the upper tank. A semiconductor manufacturing apparatus characterized by the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30097193A JP3297771B2 (en) | 1993-11-05 | 1993-11-05 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30097193A JP3297771B2 (en) | 1993-11-05 | 1993-11-05 | Semiconductor manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07130830A true JPH07130830A (en) | 1995-05-19 |
| JP3297771B2 JP3297771B2 (en) | 2002-07-02 |
Family
ID=17891286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30097193A Expired - Lifetime JP3297771B2 (en) | 1993-11-05 | 1993-11-05 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3297771B2 (en) |
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| JPH09167794A (en) * | 1995-12-15 | 1997-06-24 | Sony Corp | Electrostatic chuck and plasma processing method |
| JPH11111829A (en) * | 1997-10-06 | 1999-04-23 | Ulvac Corp | Electrostatic sucking hot plate vacuum-treatment apparatus and method for vacuum treatment |
| WO1999041778A1 (en) * | 1998-02-16 | 1999-08-19 | Komatsu Ltd. | Apparatus for controlling temperature of substrate |
| US5948986A (en) * | 1997-12-26 | 1999-09-07 | Applied Materials, Inc. | Monitoring of wafer presence and position in semiconductor processing operations |
| JP2001052978A (en) * | 1999-08-09 | 2001-02-23 | Ibiden Co Ltd | Hot plate unit |
| US6257045B1 (en) | 1997-10-10 | 2001-07-10 | Applied Komatsu Technology, Inc. | Automated substrate processing systems and methods |
| JP2001203156A (en) * | 1999-02-10 | 2001-07-27 | Ibiden Co Ltd | Hot plate unit |
| WO2001059816A1 (en) * | 2000-02-10 | 2001-08-16 | Ibiden Co., Ltd. | Hot plate unit |
| WO2001095388A1 (en) * | 2000-06-07 | 2001-12-13 | Ibiden Co., Ltd. | Supporting container and semiconductor manufacturing and inspecting device |
| JP2002050573A (en) * | 1999-02-10 | 2002-02-15 | Ibiden Co Ltd | Hot plate unit |
| WO2002059953A1 (en) * | 2001-01-23 | 2002-08-01 | Tokyo Electron Limited | Conductor treating single-wafer type treating device and method for semi-conductor treating |
| US6635853B2 (en) | 1909-08-09 | 2003-10-21 | Ibiden Co., Ltd. | Hot plate unit |
| JP2004072095A (en) * | 1999-02-10 | 2004-03-04 | Ibiden Co Ltd | Hot plate unit |
| KR100479513B1 (en) * | 2002-07-05 | 2005-03-28 | 주성엔지니어링(주) | electrostatic chuck assembly |
| WO2004093167A3 (en) * | 2003-03-31 | 2005-06-09 | Lam Res Corp | Substrate support having temperature controlled surface |
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1993
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| US6686570B2 (en) | 2000-02-10 | 2004-02-03 | Tokyo Electron Limited | Hot plate unit |
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| JP2002217178A (en) * | 2001-01-23 | 2002-08-02 | Tokyo Electron Ltd | Equipment and method of processing |
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| JP2022025137A (en) * | 2016-11-08 | 2022-02-09 | ラム リサーチ コーポレーション | Ceramic electrostatic chuck embedded with faraday cage for rf supply and associated methods for operation, monitoring, and control |
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