WO2001095388A1 - Supporting container and semiconductor manufacturing and inspecting device - Google Patents

Abstract

A supporting container (10) used for a semiconductor manufacturing and inspecting device capable of decreasing a temperature at a high speed and supporting a ceramic substrate (41), comprising a tabular body (16) functioning as a thermal insulating plate, characterized in that a plurality of openings (16a) are formed in the tabular body.

Description

 Specification

 Support container and semiconductor manufacturing / inspection equipment

 The present invention mainly relates to a support container constituting a hot plate (ceramic heater), an electrostatic chuck, a wafer prober, etc. used as a device for manufacturing or inspecting a semiconductor, and a semiconductor manufacturing / inspection device using the same. In particular, the present invention relates to a support container and a semiconductor manufacturing / inspection apparatus which constitute a semiconductor manufacturing / inspection apparatus having a high cooling rate. Background art

 Semiconductor products are extremely important products that are required in various industries.A typical example of a semiconductor chip is to slice a silicon single crystal to a predetermined thickness to produce a silicon wafer, It is manufactured by forming various circuits and the like on this silicon wafer.

 In order to form such a circuit, a process of applying a photosensitive resin on a silicon wafer, exposing and developing the resin, post-curing, or forming a conductor layer by sputtering is required. This requires heating the silicon wafer.

 Conventionally, as a heater for heating such a silicon wafer, a heater provided with a resistance heating element such as an electric resistor on the back side of an aluminum substrate has been frequently used. A thickness of about 15 mm is required, which increases the weight and is bulky, making it difficult to handle.In addition, the temperature controllability is insufficient from the viewpoint of the ability to follow the current flowing through the silicon. It was not easy to heat the wafer uniformly.

Therefore, a ceramic heater using a ceramic such as aluminum nitride as a substrate has recently been developed. These heaters are excellent in mechanical properties such as bending strength, so that their thickness can be reduced, and their heat capacity can be reduced, so that they are excellent in various properties such as temperature followability. By the way, in the recent manufacture of semiconductor products, it is required to reduce the time required for the throughput, and there is a strong demand for shortening not only the heating time but also the cooling time.

 Therefore, in a semiconductor manufacturing / inspection apparatus, usually, a ceramic substrate functioning as a heater is installed in a supporting container to form a hot plate unit, and when cooling the hot plate unit, a cooling mechanism is used. A refrigerant for forced cooling is supplied to the support container to forcibly cool the ceramic substrate. Summary of the Invention

 However, in the hot plate unit (semiconductor manufacturing / inspection apparatus) having the above-described configuration, even when the cooling medium is supplied to the supporting container, the temperature of the ceramic substrate is sufficiently lowered due to radiant heat from the bottom plate or the heat shield plate. There was a problem that there was not.

 The present invention has been made in order to solve the above-described problems, and provides a support container for improving the cooling rate of a ceramic substrate having a resistance heating element, and a semiconductor manufacturing / inspection apparatus using the support container. With the goal.

 A first aspect of the present invention is a support container for supporting a ceramic substrate, comprising: a plate-shaped body functioning as a bottom plate or a heat shield plate, wherein a plurality of openings are formed in the plate-shaped body. It is a supporting container characterized by the following.

 According to a second aspect of the present invention, there is provided a support container for supporting a ceramic substrate, comprising a substantially cylindrical outer frame portion and a plate-like body, wherein the plate-like body has a plurality of openings. It is a supporting container.

 A semiconductor manufacturing / inspection apparatus using such a supporting container is also one of the present invention. As described above, in the first and second supporting containers according to the present invention, a plurality of openings are formed in the plate-like body functioning as a bottom plate or a heat shield plate, and the heat capacity of the plate-like body is reduced, and the cooling medium This makes it possible to increase the cooling rate by facilitating the discharge of water.

It should be noted that the heat shield in the present invention is a functional expression, and the plate-like body basically functions as a heat shield unless there is another heat shield. For example, bottom plate and ceramics If there is a heat shield plate that blocks 100% heat between the heat sink and the substrate, the bottom plate will not be called a heat shield plate but will be called a bottom plate. The bottom plate also functions as a heat shield. In addition, the midsole refers to the case where the midsole is provided inside the outer frame and other than the bottom, and does not assume the presence of the bottom. Further, the bottom plate indicates a case where the bottom plate is formed at the bottom of the outer frame portion.

 The plate-shaped body may be a bottom plate or an intermediate bottom plate. Further, both the bottom plate and the middle bottom plate may be used.

 In addition, since the support container of the first aspect of the present invention does not have to be provided with an outer frame portion, for example, a ceramic substrate is fixed to a plate-like body via another member. However, it may have an outer frame portion. Further, the semiconductor manufacturing / inspection apparatus of the present invention may be such that the ceramic substrate is supported and fixed to the outer frame portion of the first and second supporting containers of the present invention.

 In the support container according to the second aspect of the present invention, it is preferable that the plate-shaped body is connected and fixed to the substantially cylindrical outer frame portion. This is because the strength of the entire support container and the form stability are improved.

 It is desirable to have a ring-shaped substrate receiving portion for supporting the ceramic substrate fitted via the heat insulating ring inside the outer frame portion. This is to improve the holding stability of the ceramic substrate while ensuring heat insulation between the ceramic substrate and the outer frame.

 The relationship between the projected area SA of the plate-shaped body and the total area S of the openings provided in the plate-shaped body is preferably 0.33 ≦ SZSA, and more preferably 0.1 ≦ SZSA. .

 By setting the ratio of the total area of the openings to 3% or more, the heat capacity of the plate-like body can be reduced, and the cooling medium that has exchanged heat with the ceramic substrate can be easily discharged, thereby improving the cooling rate. Because it can be.

Further, it is desirable that the opening is a hybrid of two or more types of openings having different diameters. This is because the distortion of the plate-like body can be reduced by combining the opening having a relatively large diameter and the opening having a relatively small diameter. If the plate is distorted, the entire support container will be distorted, lowering the flatness of the surface of the ceramic substrate, Uniform heating is hindered. In addition, when the plate used as the heat shield is distorted, the heat is not reflected uniformly, making the heating surface temperature of the ceramic substrate non-uniform and hindering uniform heating of the semiconductor wafer.

 The cooling medium is supplied from a cooling medium supply port provided in the plate. The cooling medium may be a liquid or a gas, but is preferably a gas from the viewpoint of preventing a short circuit of the resistance heating element. Examples of the gas include an inert gas such as nitrogen, argon, helium, and chlorofluorocarbon, and air. Examples of the liquid include water and ethylene glycol.

 A third aspect of the present invention is a support container for supporting a ceramic substrate, comprising a plate-like body functioning as a bottom plate or a heat shield plate, and the weight M (kg) of the support container and the ceramic substrate. The relationship of the diameter L (mm) of the support container is ML / 200.

A fourth aspect of the present invention is a support container for supporting a ceramic substrate, comprising a bottom plate or a plate-like body functioning as a heat shield plate and an accessory, and a total weight TM of the support container and the accessory component. (kg) and the diameter L (mm) of the ceramic substrate are TM≤3 (L / 200) ² .

 A fifth invention provides a support container for supporting a ceramic substrate, comprising a substantially cylindrical outer frame portion and a plate-like body, wherein the weight of the support container is M (kg) and the diameter of the ceramic substrate is L. The relationship (mm) is 00, which is a support container.

A sixth aspect of the present invention is a support container for supporting a ceramic substrate, comprising a substantially cylindrical outer frame portion, a plate-like body, and accessories, and a total weight TM (kg) of the support container and the accessories. ) And the diameter L (mm) of the ceramic substrate are TM ≦ 3 (L / 200) ² .

 The third to sixth semiconductor manufacturing / inspection apparatuses using the support container according to the present invention are also one of the present invention.

According to the third and fifth aspects of the present invention, the weight of the supporting container is defined as M (kg) and the diameter of the ceramic substrate L (mm) such that the relational expression of M≤L / 200 is satisfied. The weight M and the diameter L of the ceramic substrate are set. The reason why both are set in this way is that the smaller the weight of the supporting container, the smaller the heat capacity, the faster the cooling, the lower the radiant heat from the supporting container, and the more difficult the cooling of the ceramic substrate. This is because there is nothing to do.

 In addition, as the diameter of the ceramic substrate increases, the size of the supporting container also increases, so that the upper limit of the weight also increases accordingly. For this reason, the upper limit of the weight M of the supporting container is set to be a function of the diameter of the ceramic substrate.

 Since the third and fourth supporting containers of the present invention do not have to be provided with an outer frame portion, for example, the ceramic substrate is fixed to the plate-like body via another member. It may be provided with an outer frame part. Further, in the semiconductor manufacturing and inspection apparatus according to the third to sixth aspects of the present invention, a ceramic substrate may be supported and fixed to an outer frame portion of the support container.

In the fourth and sixth aspects of the present invention, the outer frame portion or the outer frame portion and the plate-like body are provided with accessory parts, and the total weight TM (kg) of the support container and the accessory parts and the ceramic substrate are provided. The relationship between the diameters L (mm) is TM≤3 (L / 200) ² .

 The reason why both were set in this way is that the smaller the total weight of the supporting container and the accessory parts, the smaller the heat capacity, the faster the cooling, the lower the radiant heat from the supporting container, This is because cooling of the ceramic substrate is not hindered.

 In addition, as the diameter of the ceramic substrate increases, the size of the supporting container also increases, so that the upper limit of the weight also increases accordingly. For this reason, the upper limit of the total weight T M of the supporting container and the accessory is set to be a function of the diameter of the ceramic substrate.

Here, the weight M (kg) of the support container refers to the total weight of the substantially cylindrical outer frame portion and the plate-like body, and the total weight TM (kg) of the support container and accessories is substantially cylindrical shape. In addition to the total weight of the outer frame part and the plate-shaped body, one or more selected from the cooling medium supply port, cooling medium exhaust port, cooling medium suction port, sleeve, heat insulating ring, and power control component (thermostat etc.) Is the total weight of the accessories. It is not necessary to provide all of these accessories, and if they are, Add to the weight.

 Also, the total weight of the supporting container and accessories is a problem because when the temperature of the heating surface of the ceramic substrate suddenly drops, the time required for returning the temperature to the original temperature (recovery time) is shortened. This is the case.

 Also, when the temperature rises, the temperature may temporarily deviate upward from the set temperature (overshoot), and this overshoot must be minimized.

 The cooling time is largely determined only by the outer shell of the supporting vessel (plate or body such as the bottom plate or mid-bottom plate and the outer frame) .When controlling the overshooting temperature and recovery time, take into account the weight of attached parts. Need to be controlled. Therefore, the relationship between the total weight T M (kg) of the supporting container and the accessory and the diameter of the ceramic substrate is defined as described above.

 It is desirable that the plate-like body is connected and fixed to the substantially cylindrical outer frame portion. This is because the strength of the entire support container and the form stability are improved.

 In addition, as a method of reducing the weight of the support container, a method of providing an opening in a plate-like body and adopting a method in which the thickness of each member constituting the support container is set to 0.1 to 5 mm is adopted. it can. If the thickness of the supporting vessel exceeds 5 mm, the heat capacity becomes too large.

As described above, in the first and second aspects of the present invention, a plurality of openings are formed in the plate-shaped body constituting the support container, and in the third to sixth aspects of the present invention, the weight M (kg) or the support The weight M of the supporting container and the ceramic material satisfy the relationship of 0 or 3 (L / 200) ² between the total weight TM of the container and the accessory and the diameter L (mm) of the ceramic substrate. The substrate diameter L is set.

The reason why the supporting container is defined as described above is to increase the temperature drop rate of the semiconductor manufacturing / inspection apparatus. In any of the above-mentioned inventions, the opening is formed in the plate-shaped body, It is desirable that the relation between the weight M (kg) of the container or the total weight TM of the supporting container and the accessory satisfies the above relational expression. Further, the first, third and fourth supporting containers according to the present invention do not have the outer frame portion, but as described above, these supporting containers have the outer frame portion. Is desirable. Also, In any of the above-mentioned inventions, other configurations are substantially the same. Therefore, in the following, the above-mentioned six inventions and the semiconductor manufacturing / inspection apparatus using the supporting container according to these inventions will be summarized and described as one invention. BRIEF DESCRIPTION OF THE FIGURES

 FIG. 1 (a) is a cross-sectional view schematically showing a hot plate which is an example of the semiconductor manufacturing / inspection apparatus of the present invention, and FIG. 1 (b) is a schematic view showing the bottom of a heat shielding member constituting a support container. FIG.

 FIG. 2 is a plan view of the hot plate shown in FIG.

 FIG. 3A is a cross-sectional view schematically showing another embodiment of a hot plate which is an example of the semiconductor manufacturing / inspection apparatus of the present invention, and FIG. 3B is a sectional view showing a heat shield plate constituting a supporting container. It is a perspective view which shows typically.

 FIG. 4A is a vertical sectional view schematically showing a ceramic substrate constituting the electrostatic chuck according to the present invention, and FIG. 4B is a sectional view taken along line AA of the ceramic substrate shown in FIG. It is.

 FIG. 5 is a horizontal sectional view schematically showing another example of the ceramic substrate constituting the electrostatic chuck according to the present invention.

 FIG. 6 is a horizontal sectional view schematically showing still another example of the ceramic substrate constituting the electrostatic chuck according to the present invention.

 FIG. 7 is a sectional view schematically showing a ceramic substrate constituting a wafer prober which is an example of the semiconductor manufacturing / inspection apparatus of the present invention.

 FIG. 8 is a plan view schematically showing the ceramic substrate shown in FIG.

 FIG. 9 is a cross-sectional view taken along line AA of the ceramic substrate shown in FIG.

 10 (a) to 10 (d) are cross-sectional views schematically showing a part of a method for manufacturing a hot plate, which is an example of the semiconductor manufacturing / inspection apparatus of the present invention.

FIG. 11 (a) is a cross-sectional view schematically showing a hot plate which is an example of the semiconductor manufacturing and inspection apparatus of the present invention, and FIG. 11 (b) is a heat shield member (middle) constituting a support container. FIG. 4 is a perspective view schematically showing a bottom plate). FIG. 12 (a) is a cross-sectional view schematically showing a hot plate which is an example of the semiconductor manufacturing / inspection apparatus of the present invention, and FIG. 12 (b) shows the bottom of the heat shield member constituting the support container. It is a perspective view which showed typically, (c) is explanatory drawing which showed typically the mode which forms a thermostat. Explanation of reference numerals

 1 0, 2 0 Support container

 1 1, 2 1 Outer frame

 1 2, Guide tube

 1 3, 2 3 PCB receiver

 1 5 Insulation ring

 1 6, 2 6 Heat shield material (heat shield plate)

 1 6a, 2 6a, 1 1 7 aperture

 1 7 Fixing bracket

 1 8 Porto

 1 9 Refrigerant supply pipe

 2 2 Cylindrical part

 2 2d radiation fin

 2 4 Heat shield plate receiving part

 3 0, 4 0, 1 1 0, 1 2 0 Hot plate

 3 1, 4 1 Ceramic substrate

 3 1a, 4 1a heating surface

 3 2, 4 2 Resistance heating element

 3 3 Conductive wire

 3 4, 4 4

 3 5, 4 5 Through hole

 3 6, 4 6 Lead wire

 3 7, 4 7 Temperature sensor

4 3 External terminal 4 8 Conductive wire

 1 1 2 Metal panel

 1 1 6 Middle bottom plate

 1 2 1 Thermostat

 1 2 2 Support plate

 1 2 3 screw

 1 2 4 Refrigerant exhaust pipe (refrigerant exhaust port) Detailed disclosure of the invention

 Hereinafter, the present invention will be described with reference to the embodiments of the present invention. However, it is needless to say that the present invention is not limited to the embodiments and can be modified without impairing the effects of the present invention.

 FIG. 1A is a longitudinal sectional view schematically showing a hot plate which is an example of the semiconductor manufacturing / inspection apparatus of the present invention, and FIG. 1B is a perspective view showing the bottom of a heat shield member (heat shield plate). FIG. FIG. 2 is a plan view of the semiconductor manufacturing / inspection apparatus shown in FIG. 1. The hot plate 40 includes, for example, a ceramic substrate 41 and a support container 10 as shown in FIG. On the surface (bottom surface) of the disc-shaped ceramic substrate 41, a plurality of resistance heating elements 42 having a concentric circular shape in a plan view are formed, and a bottomed hole 44, a through hole 45, and the like are formed. In order to measure the temperature of the ceramic substrate 41, a temperature measuring element 47 to which a lead wire 46 is connected is embedded in the bottomed hole 44.

 The ceramic substrate 41 is fitted on the upper portion of a substantially cylindrical support container 10 via an insulating ring 15 having an L-shaped cross section.

The support container 10 has an annular substrate receiving portion 13 that supports the ceramic substrate 41 and the heat insulating ring 15 inside the substantially cylindrical outer frame portion 11. The heat insulating ring 15 and the ceramic substrate 41 are fixed by a substrate receiving portion 13 and a fixing bracket 17 via bolts 18. That is, a fixing bracket 17 is attached to the bolt 18 and the ceramic substrate 41 or the like is pressed and fixed. Further, a heat shield member (heat shield plate) 16 having a plurality of openings 16 a for preventing heat radiation may be connected and fixed to the outer frame portion 11. The heat shield member (heat shield plate) 16 may be fixed via bolts or the like, may be integrally formed with the outer frame portion 11, or may be fixed by welding or the like. Further, the outer frame portion 11 may be constituted by a heat insulating ring.

 In addition, as shown in FIG. 1, the heat shield plate 16 is not necessarily a plate-like body, but may be a bottomed cylindrical member in which the plate-like body and the cylindrical member are integrated.

 Note that a control device containing a control device, a power supply, and the like is provided below the support container 10, and the conductive wires 48 and the lead wires 46 are connected to the control device in the control device. .

 Normally, precision equipment is sensitive to high temperatures, so when using the hot plate 40, it is necessary to shield the radiant heat from the ceramic substrate 41 and protect the control device containing the precision equipment, etc. . Therefore, a heat shield plate 16 is provided between the control device and the ceramic substrate 41. Further, a radiation fin may be interposed between the control device and the hot plate 40 as required.

 At this time, by using a hot plate having such a configuration, the temperature and the like of the ceramic substrate 41 can be accurately controlled, and the silicon wafer W can be uniformly heated to a target temperature. The control device is also protected from the heat of the hot plate 40, and can operate normally.

 In the present embodiment, the outer frame portion 11 and the heat shield plate 16 are made of metal, specifically, at least one metal selected from stainless steel, aluminum alloy, copper, steel, nickel, and noble metal. Is desirable. This is because metal has high thermal conductivity and low specific heat, so it is easy to cool, and does not hinder cooling of the ceramic substrate 41 by radiant heat.

 In the present invention, the thickness of the members (the outer frame portion 11 and the heat shield plate 16) constituting the support container 10 is preferably 0.1 to 5 mm. If the thickness is less than 0.1 mm, the strength is poor, and if it exceeds 5 mm, the heat capacity increases.

The total weight of the outer frame 11 and the heat shield 16, that is, the weight M (kg) of the support container 10 is a function of the diameter L (mm) of the ceramic substrate 41, and M ≦ 200. M is If it exceeds L / 200, the heat capacity will increase, and radiant heat will be generated from the outer frame 11 and the heat shield 16, causing the ceramic substrate 41 to shine and prevent the ceramic substrate 41 from lowering in temperature. I do.

 Here, the cooling time of the ceramic substrate 41 is substantially determined by the weight M of the outer frame portion 11 and the heat shield plate 16.

 This is because accessories such as the refrigerant supply pipe (cooling medium supply port) 19, port 18 and fixing bracket 17 are rapidly cooled by the refrigerant, and the heat insulating ring 15 is difficult to store heat. However, even if these weights are large, the cooling time has little effect and the heat capacity thereof can be almost ignored.

'However, the total weight TM (kg) of the weight M of the outer frame 11 and the heat shield 16 plus the weight of the accessory parts is a function of the diameter L (mm) of the ceramic substrate 41, and TM ≤ 3 ( L / 200) ² is desirable. If TM exceeds 3 (L / 200) ² , radiant heat from the insulation ring (insulation material) 5 and the above-mentioned accessories cannot be ignored, and the temperature measuring element cannot measure the temperature accurately, and the recovery time will be longer. However, the overshoot temperature may be too high.

 That is, when the diameter L of the ceramic substrate 41 is 8 inches (L = 200 mm), the upper limit is M = lkg and TM = 3 kg. When L is 12 inches (L = 300 mm), M is 1.5 For kg and TM, the upper limit is 6.75 kg.

 The relationship between the projected area SA of the heat shield plate 16 (that is, the area of the bottom when there is no opening 16a) and the total area S of the openings 16a provided in the plate-like body is 0.03 SZSA. .

 If the total opening area is less than 3%, it is difficult to discharge the cooling medium that has contacted with the ceramic substrate 41 and exchanged heat, and the heat capacity of the heat shield plate also becomes large.

 The diameter of one opening 16a (average diameter or length of one side in the case of an ellipse or square) is preferably 1 to 5 Omm. If the diameter of the opening 16a is less than 1 mm, it is difficult to discharge the cooling medium, and if it exceeds 5 Omm, it cannot function as a heat shield. The openings 16a are desirably arranged evenly on the heat shield plate 16, as shown in FIG. 1 (b).

Also, the openings 16a have different diameters (for example, 30mm, 10mm, 8mm). mm). This is because distortion of the heat shield plate 16 due to the opening 16a can be minimized. If the openings 16a are only large, the rigidity of the heat shield plate 16 will decrease and be distorted.However, the rigidity of the heat shield plate 16 is prevented from decreasing by coexisting the large and small openings. And distortion can be minimized.

 If the heat shield plate 16 is distorted, the heat is not reflected uniformly, so that it is considered that heat distribution occurs in the ceramic substrate 41 and uniform heating of the silicon wafer cannot be realized. In the semiconductor manufacturing / inspection apparatus (hot plate) of the present invention, the resistance heating elements 42 are provided on the bottom surface as described above. Are connected via a solder layer, and a socket 49 having a conductive wire 48 is attached to the external terminal 43. A through hole 45 for inserting a lifter pin (not shown) is formed in a portion near the center of the ceramic substrate 41, and a guide tube 12 communicating with the through hole 45 is provided with a heat shield plate. It is installed in 16.

 The supporting container 10 includes a substantially cylindrical outer frame portion 11 and an annular substrate receiving portion 13 provided inside the outer frame portion 11, and these are integrally formed. . Further, on the bottom surface of the outer frame 11, a bottomed cylindrical heat shield member (heat shield plate 16) is installed.

 The substrate receiving portion 13 supports the ceramic substrate 41 fitted via the heat insulating ring 15.

 The heat shield plate 16 is provided with a refrigerant supply pipe 19 so that a cooling medium such as cooling air can be introduced when cooling the ceramic substrate 41. A number of apertures 16a are provided for discharging cooling air. Therefore, after the ceramic substrate 41 is heated, a cooling medium is supplied from the refrigerant supply pipe 19 and is discharged from the opening 16a while cooling the ceramic substrate 41, whereby the ceramic substrate 41 is quickly cooled. Can be cooled.

The heat insulating ring 15 is desirably made of at least one resin selected from polyimide resin, fluorine resin, and benzimidazole resin, or a fiber-reinforced resin. Fiber-reinforced resin is glass fiber Resins in which one is dispersed can be cited. Since the fiber-reinforced resin softens even when the temperature rises and the ceramic substrate does not tilt, the separation distance can be accurately secured when the silicon wafer is heated from the heating surface.

 When the semiconductor manufacturing / inspection apparatus (hot plate) of the present invention is operated, the resistance heating element 42 generates heat and the temperature of the ceramic substrate 41 rises, but the temperature measuring element buried inside the ceramic substrate 41. 4 7 measures the temperature of the ceramic substrate 41, the measured data is input to the control device through the lead wire 46, and the applied voltage (current) is controlled, so that the temperature of the ceramic substrate 41 is constant. Is controlled by

 FIG. 3 (a) is a cross-sectional view showing a hot plate according to another embodiment, and (b) is a perspective view schematically showing the heat shield plate shown in (a). As shown in the hot plate 30, a cylindrical portion 22 to which the radiation fins 22d are attached may be extended below the support container 20. By providing the radiation fins 22 d in this manner, the hot plate 30 can be cooled more quickly. In this case, the total weight TM includes the outer frame 21 including the radiating fins 22 d, the bottom plate (heat shield 26), the refrigerant supply port 19, the sleeve (guide tube 12), the heat insulation Total weight of ring 15

 Further, in the device shown in FIG. 3, the outer diameter of the cylindrical portion 22 provided at the lower portion of the support container 20 is large enough to fit into the radiation fin, so that the control device and the power supply are not required. The hot plate 30 can be installed on the housed control device via the radiation fins 22d. Then, by the action of the radiation fins 22 d, the temperature of the lower control device does not become high, but is kept close to room temperature. The configuration of the hot plate 30 shown in FIG. 3 will be described later in detail.

 Fig. 11 (a) is a cross-sectional view schematically showing a hot plate having an insole plate (heat shield plate) inside, and (b) is a schematic view of the insole plate shown in (a). It is a perspective view shown in FIG.

 This hot plate 110 has the same configuration as the hot plate 40 shown in FIG. 1 except that an inner bottom plate 116 is provided inside the support container 10.

The midsole plate 1 1 6 is made of metal plate panel 1 1 2 The metal plate panel 1 1 2 is fixed to the heat shield plate (bottom plate) 16 with screws. The midsole plate 116 supported in this way does not contact the outer frame portion 11 due to thermal expansion and does not distort the outer frame portion 11.

 Also, the midsole plate 1 16 functions as a heat shield plate. A plurality of openings 1 17 are formed in the midsole plate 1 16, and the openings 1 17 serve to exhaust the heat-exchanged refrigerant and to reduce the heat capacity of the midsole plate 1 16. Has also been fulfilled. The openings 117 are desirably of different diameters (for example, 30 mm, 10 mm, 8 mm) as shown. If the openings 1 17 are made too large, the rigidity of the midsole plate 1 16 will be reduced, and the distortion will occur.The coexistence of a large opening and a small opening prevents the rigidity of the midsole plate 1 16 from decreasing. To minimize distortion.

 If the midsole plate 116 is distorted, heat is not reflected uniformly, so that it is considered that heat distribution occurs in the ceramic substrate 41 and uniform heating of the silicon wafer cannot be realized.

 In this hot plate 110, the gross weight TM is the outer frame portion 11, the heat shield plate (bottom plate) 16, the refrigerant supply pipe (refrigerant supply port) 19, the sleep (guide pipe 12), It is the total weight of the insulating ring 15, the midsole plate 1 16 and the metal plate panel 1 1 2. Fig. 12 (a) is a cross-sectional view schematically showing a hot plate having a thermostat, a refrigerant exhaust pipe (refrigerant exhaust port), and a refrigerant supply pipe (refrigerant supply port) on the bottom plate. () Is a perspective view schematically showing the bottom plate shown in (a), and (c) is an explanatory view showing how the thermostat is fixed in the opening.

 The hot plate 120 has a thermostat 121 in an opening 16 a formed in the heat shield plate 16, and a refrigerant exhaust pipe (refrigerant exhaust port) 124 in the heat shield plate 16. Other than being formed, it is configured almost similarly to the hot plate 40 shown in FIG.

As shown in FIG. 12 (c), the thermostat 12 1 is disposed on the support plate 12 2, and the support plate 1 2 ′ 2 on which the thermostat 12 1 is disposed is a heat shield plate (bottom plate). The screw is fixed to the opening of 16 with screws 1 2 3. In such a hot plate 120, since the thermostat 121 is provided on the heat shield plate (bottom plate) 16, some trouble occurs in the temperature measuring element 47 or the control device, and the ceramic plate is not used. Even when the temperature of the substrate 41 suddenly rises, the circuit between the power supply and the resistance heating element 42 can be cut off to prevent the ceramic substrate 41 from overheating.

 In this hot plate 120, the total weight TM is the outer frame portion 11, the heat shield plate (bottom plate) 16, the refrigerant supply pipe (refrigerant supply port) 19, and the refrigerant exhaust pipe (refrigerant exhaust port). ) The total weight of the sleeve (guide tube 1 2), insulation ring 15 and thermostat 12 1.

 In the semiconductor manufacturing / inspection apparatus of the present invention such as a hot plate, the resistance heating element embedded in the ceramic substrate is made of a metal such as a noble metal (gold, silver, platinum, palladium), tanda stainless steel, molybdenum, nickel, or tungsten. It is desirable to be made of a conductive ceramic such as carbide of molybdenum. This is because the resistance value can be increased, the thickness itself can be increased for the purpose of preventing disconnection, etc., and it is not easily oxidized, and the thermal conductivity is not easily reduced. These may be used alone or in combination of two or more.

 In addition, since the resistance heating element needs to make the temperature of the entire ceramic substrate uniform, a concentric pattern as shown in FIG. 2 or a combination of a concentric pattern and a curved pattern is preferable. . Further, the thickness of the resistance heating element is desirably 1 to 50 μm, and the width thereof is desirably 5 to 20 mm.

 The resistance value can be changed by changing the thickness and width of the resistance heating element, but this range is the most practical. The resistance value of the resistance heating element becomes thinner and becomes larger as it becomes thinner.

If a resistance heating element is provided inside as shown in Fig. 3, the distance between the heating surface 31a and the resistance heating element 32 will be short, and the uniformity of the surface temperature will be reduced. 3 2 It is necessary to increase the width of itself. Further, since the resistance heating element 32 is provided inside the ceramic substrate 31, it is not necessary to consider the adhesion to the nitride ceramic or the like. Also, if the resistance heating element 42 is provided on the surface (bottom 4 lb), the distance between the heating surface 41a and the resistance heating element 42 becomes longer, and the uniformity of the surface temperature is improved. be able to. In addition, since the heat exchange can be performed by bringing the cooling medium into direct contact with the resistor, rapid temperature reduction can be achieved.

 The resistance heating element may have a rectangular, elliptical, spindle-shaped or kettle-shaped cross section, but is preferably flat. This is because the flattened surface tends to radiate heat toward the heated surface, so that the amount of heat transmitted to the heated surface can be increased, and the temperature distribution on the heated surface is difficult.

 Note that the resistance heating element may have a spiral shape.

 Further, it is desirable that the resistance heating element be formed in an area of up to 50% in the thickness direction from the bottom surface. This is to prevent the occurrence of temperature distribution on the heating surface and to uniformly heat the silicon wafer.

 In order to form a resistance heating element on the bottom or inside of the ceramic substrate, it is preferable to use a conductive paste made of metal or conductive ceramic.

 That is, when a resistance heating element is formed on the bottom surface of a ceramic substrate, usually, after firing, a ceramic substrate is manufactured, and then the above-mentioned conductor paste layer is formed on the surface of the ceramic substrate, followed by firing. Form the body. On the other hand, when the resistance heating element 32 is formed inside the ceramic substrate as shown in FIG. 1, after forming the conductive paste layer on the green sheet, the green sheet is laminated and fired. A resistance heating element is formed inside.

 The conductive paste is not particularly limited, but preferably contains not only metal particles or conductive ceramic particles for ensuring conductivity, but also a resin, a solvent, a thickener, and the like.

 Examples of the material of the metal particles and the conductive ceramic particles include those described above. The particle size of these metal particles or conductive ceramic particles is preferably from 0.1 to 10Ομΐη. If it is too small, less than 0.1 / zm, it is liable to be oxidized. On the other hand, if it exceeds 100 μm, sintering becomes difficult and the resistance value becomes large. The shape of the metal particles may be spherical or scaly. When these metal particles are used, the metal particles may be a mixture of the above-mentioned spherical particles and the above-mentioned scaly particles.

When the metal particles are flakes or a mixture of spheroids and flakes This is advantageous because the metal oxide between metal particles can be easily held, the adhesion between the resistance heating element and the ceramic substrate can be ensured, and the resistance value can be increased.

 Examples of the resin used for the conductor paste include an acrylic resin, an epoxy resin, and a phenol resin. Examples of the solvent include isopropyl alcohol. Examples of the thickener include cellulose and the like.

 When forming a conductor paste for a resistance heating element on the surface of a ceramic substrate, a metal oxide is added to the conductor paste in addition to the metal particles, and the metal particles and the metal oxide are sintered. It is preferable to use In this way, by sintering the metal oxide together with the metal particles, the ceramic substrate and the metal particles can be more closely adhered.

 It is not clear why mixing the above metal oxides improves the adhesion to the ceramic substrate, but the surface of metal particles and the surface of non-oxide ceramic substrates are slightly oxidized. It is considered that an oxide film is formed, and the oxide films are sintered and integrated via the metal oxide, and the metal particles and the ceramic adhere to each other. Also, when the ceramic constituting the ceramic substrate is an oxide, the surface is naturally made of an oxide, so that a conductor layer having excellent adhesion is formed.

The metal oxide, for example, lead oxide, zinc oxide, silica, boron oxide (B ₂ 0 _3), alumina, even without less selected from the group consisting of yttria and Chitayua one is preferred.

 These oxides can improve the adhesion between the metal particles and the ceramic substrate without increasing the resistance value of the resistance heating element.

The ratio of the lead oxide, zinc oxide, silica, boron oxide (B ₂ O ₃ ), alumina, yttria, and titaure is as follows, when the total amount of metal oxide is 100 parts by weight, 1 ~ 10, silica 1 ~ 30, boron oxide 5 ~ 50, zinc oxide 20 ~ 70, alumina 1 ~: L0, yttria 1 ~ 50, titaure 1 ~ 50 and the total is adjusted so as not to exceed 100 parts by weight. Is preferred.

 By adjusting the amounts of these oxides in these ranges, the adhesion to the ceramic substrate can be particularly improved.

 The amount of the metal oxide added to the metal particles is preferably 0.1% by weight or more and less than 10% by weight. The area resistivity when the resistance heating element is formed using the conductor paste having such a configuration is preferably 1 to 45 πιΩ / port.

 If the area resistivity exceeds 45 Π1 Ω, the amount of heat generated will be too large for the applied voltage, and in a ceramic substrate for a semiconductor device provided with a resistive heating element on the surface, the amount of heat generated will be controlled. Because it is difficult. If the addition amount of the metal oxide is 10% by weight or more, the sheet resistivity exceeds 5ΟπιΩΩΖ, and the calorific value becomes too large, so that the temperature control becomes difficult and the temperature distribution becomes poor. Will occur.

 When the resistance heating element is formed on the surface of the ceramic substrate, a metal coating layer is preferably formed on the surface of the resistance heating element. This is to prevent the resistance value from changing due to oxidation of the internal metal sintered body. The thickness of the metal coating layer to be formed is preferably 0.1 to 10 μm.

 The metal used for forming the metal coating layer is not particularly limited as long as it is a non-oxidizing metal, and specific examples include gold, silver, palladium, platinum, nickel, and the like. These may be used alone or in combination of two or more. Of these, nickel is preferred.

 When the resistance heating element is formed inside the ceramic substrate, no coating is required because the surface of the resistance heating element is not oxidized.

 As described above, the ceramic substrate that constitutes the above-described semiconductor manufacturing / inspection apparatus (hot plate) is provided with a resistance heating element, has a function as a heater, and is capable of heating a target to be heated such as a semiconductor wafer. Can be heated to temperature.

In the above description, a ceramic substrate provided with a resistance heating element has been described as an example of the conductor layer. However, the conductor layer is not limited to the resistance heating element. A chuck top conductor layer is formed on the surface, and a guard electrode and ground electrode are formed inside. In an electrostatic chuck, electrostatic electrodes and RF electrodes are formed inside a ceramic substrate. The material of the ceramic substrate 31 constituting the semiconductor manufacturing / inspection apparatus of the present invention is not particularly limited, and examples thereof include a nitride ceramic, a carbide ceramic, and an oxide ceramic.

 Examples of the nitride ceramic include metal nitride ceramics, for example, aluminum nitride, silicon nitride, boron nitride, and the like.

 Examples of the carbide ceramic include metal carbide ceramics, for example, silicon carbide, zirconium carbide, tantalum carbide, and the like.

 Examples of the oxide ceramic include metal oxide ceramics, for example, alumina, zirconia, cordierite, and mullite.

 These ceramics may be used alone or in combination of two or more. Among these ceramics, nitride ceramics and carbide ceramics are more preferable than oxide ceramics. This is because the thermal conductivity is high.

 Aluminum nitride is the most preferable among the nitride ceramics. This is because the thermal conductivity is the highest at 180 W / m · K.

Further, the ceramic material may contain a sintering aid. Examples of the sintering aid include alkali metal oxides, alkaline earth metal oxides, and rare earth oxides. Among these sintering _{aids, C a O, Y 2 0} 3, N a 2 0, L it 2 0, R b 2 O is preferred. Their content is preferably 0.1 to 10% by weight. Further, it may contain alumina.

 The ceramic substrate for a semiconductor device according to the present invention preferably has a brightness of N6 or less as a value based on the provisions of JIS Z8721. This is because those having such brightness have excellent radiation heat quantity and concealability. In addition, such a ceramic substrate can accurately measure the surface temperature by means of a thermoviewer.

 Where N is the ideal black lightness, 0 is the ideal white lightness, and 10 is the perceived brightness of the color between these black lightness and white lightness. Each color is divided into 10 so as to have a uniform rate, and is indicated by symbols N0 to N10. The actual measurement is performed by comparing the color charts corresponding to NO to N10. In this case, the first decimal place is 0 or 5.

Ceramic substrates having such characteristics include carbon in the ceramic substrate. It is obtained by containing 50 to 500 ppm. There are two types of carbon, amorphous and crystalline. Amorphous carbon can suppress a decrease in the volume resistivity of a ceramic substrate at high temperatures, and crystalline carbon can be a ceramic. Since the decrease in the thermal conductivity of the substrate at a high temperature can be suppressed, the type of carbon can be appropriately selected according to the purpose of the substrate to be manufactured. As amorphous carbon, for example, hydrocarbons consisting only of C, H, and O, preferably, saccharides can be obtained by calcining in air. Graphite powder or the like can be used.

 In addition, carbon can be obtained by thermally decomposing the acrylic resin in an inert atmosphere (nitriding gas, argon gas) and then heating and pressurizing it. However, the acid value of the acrylic resin must be changed. Thus, the degree of crystallinity (amorphousness) can be adjusted.

 The ceramic substrate for a semiconductor device of the present invention preferably has a disk shape, preferably has a diameter of 200 mm or more, and most preferably 250 mm or more.

 Disc-shaped ceramic substrates for semiconductor devices are required to have uniform temperature, but the larger the diameter of the substrate, the more likely the temperature will be non-uniform.

 The thickness of the ceramic substrate for a semiconductor device of the present invention is preferably 50 mm or less, more preferably 20 mm or less. Also, 1 to 10 mm is optimal.

 If the thickness is too small, warping at high temperatures is likely to occur, and if the thickness is too large, the heat capacity becomes too large and the temperature rise / fall characteristics deteriorate.

 The porosity of the ceramic substrate for a semiconductor device of the present invention is desirably 0 or 5% or less. This is because a decrease in thermal conductivity at high temperatures and the occurrence of warpage can be suppressed. The ceramic substrate for a semiconductor device of the present invention can be used at 200 ° C. or higher.

 In the semiconductor manufacturing / inspection apparatus of the present invention, as shown in FIG. 1, it is desirable to embed a thermocouple in a bottomed hole formed in a ceramic substrate. This is because the temperature of the resistance heating element can be measured with a thermocouple, and the temperature can be controlled by changing the voltage and current based on the data.

The size of the junction of the above-mentioned thermocouple metal wires is the same as the strand diameter of each metal wire. It is better to be larger and less than 0.5 mm. With such a configuration, the heat capacity of the junction is reduced, and the temperature is accurately and quickly converted to a current value. For this reason, the temperature controllability is improved, and the temperature distribution on the heated surface of the semiconductor wafer is reduced.

 Examples of the thermocouple include K-type, R-type, B-type, E-type, J-type, and T-type thermocouples, as described in JIS-C-162 (1980). Can be

 FIG. 3 (a) is a cross-sectional view schematically showing another embodiment of a hot plate which is an example of a semiconductor manufacturing / inspection apparatus of the present invention, and FIG. 3 (b) is a heat shield constituting a support container. It is the perspective view which showed the board typically.

 The hot plate 30 is composed of a ceramic substrate 31 and a supporting container 20. The ceramic substrate 31 has a resistance heating element 32 formed therein, and is provided directly below an end of the resistance heating element 32. A through hole 39 is formed, and a cushion 29 as a cushioning member is fitted into a blind hole 38 that exposes the through hole 39, and is fixed with a brazing material or the like. A conductive wire 33 is inserted into the center hole of the washer 29, and is fixed with a brazing material or the like.

 The ceramic substrate 31 having such a configuration is fitted to the upper portion of the support container 20 via the heat insulating ring 15.

 The support container 20 includes a substantially cylindrical outer frame portion 21, and a ring-shaped substrate receiving portion 23 and a heat-shielding plate receiving portion 24 provided on the inner upper and lower portions of the outer frame portion 21, respectively. And these are integrally formed. On the other hand, on the bottom surface of the outer frame 21, an upper annular portion 2 2 b and a lower annular portion 22 c are connected via a middle portion 22 a having a heat radiation fin 22 d. The part 22 is present, and the diameter of the cylindrical part of the intermediate part 22 a is smaller than that of the outer frame part 21. Further, the cylindrical portion 22 is separated from the outer frame portion 21 and the like, and is extended so as to be detachable. Therefore, the cylindrical portion 22 is connected with bolts and the like together with the heat shield plate 26. It is supported and fixed to the heat shield plate receiving portion 24 via the member 27. ·

The internal structure, wiring, etc. of the heat shield plate 26 are substantially the same as those of the hot plate 40 shown in FIG. 1, but the opening 26 a is set larger than the hot plate shown in FIG. . A control device is provided below the cylindrical portion 22 having the radiation fins 2 2 d. A conductive wire 33 and a lead wire 36 are connected to a control device in the control device.

 When the hot plate 40 is operated, the resistance heating element 32 generates heat and the temperature of the ceramic substrate 31 rises. However, the ceramic substrate 31 is embedded by the temperature measuring element 37 embedded in the ceramic substrate 31. The temperature of 1 is measured, the measured data is input to the control device, and the amount of applied voltage (current) is controlled, so that the temperature of the ceramic substrate 31 is controlled to a constant value.

 In addition, since the cylindrical portion 22 can be attached to a control device, the control device and the power supply are housed, and the semiconductor manufacturing / inspection device of the present invention can be installed on the control device. By the action of the heat radiation fins, the lower control device can be kept at almost normal temperature.

 In addition, since a small-diameter cylindrical portion only needs to be fitted to the apparatus main body, there is no need to increase the size of the fitting portion and to increase the size of the apparatus.

 Even if the size of the stage substrate is increased, the size of the fitting portion can be the same as that of the conventional one, so that the apparatus main body may be left as it is.

 Furthermore, since the heat shield plate 26 has a large number of openings 26a, the heat capacity of the plate-like body can be reduced, and the cooling medium can be easily discharged, thereby improving the cooling speed. Can be.

 The hot plate has been described as an example of the semiconductor manufacturing and inspection apparatus of the present invention. Specific examples of the semiconductor manufacturing / inspection apparatus of the present invention include, in addition to the above hot plate, an electrostatic chuck, a wafer prober, a susceptor, and the like.

 The hot plate (ceramic heater) is a device in which only a resistance heating element is provided on the surface or inside of a ceramic substrate, and can heat an object to be heated such as a semiconductor wafer to a predetermined temperature.

 On the other hand, when an electrostatic electrode is provided as a conductive layer inside a ceramic substrate constituting the semiconductor manufacturing / inspection apparatus of the present invention, it functions as an electrostatic check.

As the metal used for the electrostatic electrode, for example, noble metals (gold, silver, platinum, and palladium), tungsten, molybdenum, nickel, and the like are preferable. Also, Examples of the conductive ceramic include carbides of tungsten and molybdenum. These may be used alone or in combination of two or more. FIG. 4A is a longitudinal sectional view schematically showing a ceramic substrate used for an electrostatic chuck, and FIG. 4B is a sectional view taken along line AA of the ceramic substrate shown in FIG. In this ceramic substrate for an electrostatic chuck, chuck positive and negative electrode layers 62 and 63 are buried inside the ceramic substrate 61 and connected to through holes 680 respectively, and a ceramic dielectric film 64 is formed on the electrode. Are formed.

 On the other hand, inside the ceramic substrate 61, a resistance heating element 66 and a through hole 68 are provided so that an object to be heated such as a silicon wafer 29 can be heated. Note that an RF electrode may be embedded in the ceramic substrate 61 as necessary.

 Also, as shown in (b), the ceramic substrate 61 is usually formed in a circular shape in plan view, and the semi-circular portion 6 shown in (b) is formed inside the ceramic substrate 61.

The chuck positive electrode electrostatic layer 6 2 composed of 2 a and the comb tooth part 6 2 b, and the chuck negative electrode electrostatic layer 6 3 also composed of the semicircular part 6 3 a and the comb tooth part 6 3 b Tooth

They are arranged to face each other so as to intersect 6 2 b and 6 3 b.

 The ceramic substrate having such a configuration is fitted into a support container having substantially the same structure and function as the support container 10 shown in FIG. 1, and operates as an electrostatic chuck. At this time, the plus side and one side of the wiring extending from the DC power supply in the control device are connected to the chuck positive electrode electrostatic layer 62 and the chuck negative electrode electrostatic layer 63, and a DC voltage is applied.

 As a result, the semiconductor wafer mounted on the electrostatic chuck is electrostatically attracted and various processing can be performed on the semiconductor wafer.

 FIGS. 5 and 6 are horizontal cross-sectional views schematically showing electrostatic electrodes of a ceramic substrate constituting another electrostatic chuck. In the ceramic substrate for an electrostatic chuck shown in FIG. 5, a ceramic substrate is used. A semi-circular chuck positive electrode electrostatic layer 2 1 2 and a chuck negative electrode electrostatic layer 2 13 are formed inside 2 1 1. The ceramic substrate for the electrostatic chuck shown in FIG. Chuck positive electrode electrostatic layer 2 2 2a, 2 2 b and chuck negative electrode electrostatic layer 2 2 3a, 2 2

3b is formed. In addition, two positive electrode electrostatic layers 2 2 2a, 2 2 2b and The two chuck negative electrode electrostatic layers 223a and 223b are formed so as to cross each other.

 In the case of forming an electrode in which a circular electrode or the like is divided, the number of divisions is not particularly limited, and may be five or more, and the shape is not limited to a sector. When a check conductor layer is provided on the surface of a ceramic substrate constituting a semiconductor manufacturing / inspection apparatus of the present invention, and a guard electrode or a ground electrode is provided as an internal conductor layer, it functions as a wafer proper.

 FIG. 7 is a cross-sectional view schematically showing one embodiment of a ceramic substrate constituting the wafer prober according to the present invention, FIG. 8 is a plan view thereof, and FIG. 9 is a plan view of the wafer shown in FIG. FIG. 3 is a sectional view taken along line AA in the prober.

 In this wafer prober, concentric grooves 8 are formed on the surface of a ceramic substrate 3 having a circular shape in plan view, and a plurality of suction holes 9 for sucking a silicon wafer are provided in a part of the grooves 8. The check conductor layer 2 for connecting to the electrode of the silicon wafer is formed in a circular shape on most of the ceramic substrate 3 including the groove 8.

 On the other hand, on the bottom surface of the ceramic substrate 3, a resistance heating element 51 having a concentric circular shape in a plan view is provided in order to control the temperature of the silicon wafer. Although not shown, external terminals are connected and fixed to both ends of the resistance heating element 51. Further, inside the ceramic substrate 3, a guard electrode 6 and a ground electrode 7 (not shown) having a lattice shape as shown in FIG. 9 are provided in order to remove a stray capacitor noise. Reference numeral 52 indicates an electrode non-formed portion. The reason why such a rectangular electrode non-formed portion 52 is formed inside the guard electrode 6 is that the upper and lower ceramic substrates 3 sandwiching the guard electrode 6 are firmly bonded.

 The ceramic substrate having such a configuration is fitted into a support container having a structure substantially similar to that shown in FIG. 1, and operates as a wafer prober.

In this wafer prober, after placing a silicon wafer having an integrated circuit formed on a ceramic substrate 3, a probe card having tester pins is pressed against the silicon wafer, and a voltage is applied while heating and cooling to conduct a continuity test. What to do Can be.

 Next, a method of manufacturing a hot plate will be described as an example of a method of manufacturing a semiconductor manufacturing / inspection apparatus of the present invention.

 FIGS. 10 (a) to (d) are cross-sectional views schematically showing steps of manufacturing a ceramic substrate having a resistance heating element inside a ceramic substrate constituting a semiconductor manufacturing / inspection apparatus of the present invention. .

 (1) Manufacturing process of ceramic substrate

 First, a paste is prepared by mixing nitride ceramic powder with a binder, a solvent, and the like, and a green sheet is prepared using the paste.

 As the above-mentioned ceramic powder, aluminum nitride or the like can be used, and if necessary, a sintering aid such as yttria may be added. Further, when producing a green sheet, crystalline or amorphous carbon may be added.

 Further, as the binder, at least one selected from an acrylic binder, ethyl cellulose, butyl cellosolve, and polyvinyl alcohol is desirable. Further, as the solvent, at least one selected from α-terbineol and glycol is desirable.

 A paste obtained by mixing these is formed into a sheet by a doctor blade method to produce a green sheet 50.

 The thickness of the green sheet 50 is preferably 0.1 to 5 mm.

 Next, the obtained green sheet is provided, as necessary, with a portion serving as a through hole for inserting a support pin for supporting a silicon wafer, and a bottomed hole for embedding a temperature measuring element such as a thermocouple. And a portion 390 serving as a through hole for connecting the resistance heating element to the external terminal is formed. The above-described processing may be performed after forming a green sheet laminate described later, or the above-described processing may be performed after forming a sintered body.

 (2) Process of printing conductive paste on green sheet

 A conductive paste containing a metal paste or a conductive ceramic is printed on the green sheet 50 to form a conductive paste layer 320.

These conductive pastes contain metal particles or conductive ceramic particles. Have been.

 The average particle diameter of the metal particles such as tungsten particles or molybdenum particles is preferably 0.1 to 5 μπι. If the average particle size is less than 0.1 l / zm or more than 5 μm, it is difficult to print the conductive paste.

As such a conductive paste, for example, 85 to 87 parts by weight of metal particles or conductive ceramic particles; at least one kind selected from atarinole-based, etinoresenorelose, butylcellosonolep, and polybutyl alcohol 1.5 to 10 parts by weight of a binder; and 1.5 to 10 parts by weight of a composition (paste) in which at least one solvent selected from _α -terbineol and glycol is mixed.

 (3) Green sheet lamination process

 The green sheet 50 not printed with the conductor paste manufactured in the above step (1) is laminated on and under the dull sheet 50 printed with the conductor paste layer 320 formed in the above step (2) (see FIG. 10 (a)).

 At this time, the number of green sheets 50 stacked on the upper side is made larger than the number of green sheets 50 stacked on the lower side, and the formation position of the resistance heating element 32 is eccentric toward the bottom.

 Specifically, it is preferable that the number of stacked upper dust sheets 50 is 20 to 50, and the number of stacked lower green sheets 50 is 5 to 20.

 (4) Green sheet laminate firing process

The green sheet laminate is heated and pressurized to sinter the green sheet 50 and the conductive paste therein to produce a ceramic substrate 31 (FIG. 10 (b)). The heating temperature is preferably from 1,000 to 2000 ° C., and the pressure is preferably from 10 to 20 MPa (100 to 200 kg / cm ² ). Heating is performed in an inert gas atmosphere. As the inert gas, for example, argon, nitrogen, and the like can be used.

The obtained ceramic substrate 31 is provided with a bottomed hole (not shown) for inserting a temperature measuring element and a blind hole 38 for inserting an external terminal (FIG. 10 (c)). . The bottomed hole and the blind hole 38 can be formed by blasting such as drilling or sand blasting after surface polishing. Next, a washer 29 made of conductive ceramic or the like is fitted into the through hole 38 exposed from the blind hole 38, and the conductive wire 33 is connected using a gold solder or the like (FIG. 10 (d)).

 The heating temperature is preferably from 90 to 450 ° C. in the case of soldering, and from 900 to 110 ° C. in the case of processing with brazing material. In addition, a thermocouple as a temperature measuring element is sealed with a heat-resistant resin to make a ceramic substrate for a hot plate.

 Thereafter, the obtained ceramic substrate is fitted through a heat insulating ring 15 into a support container 20 having a structure as shown in FIG. 3, and wiring from the temperature measuring element 37 such as a thermocouple and the resistance heating element 32 is connected. Then, fit the cylindrical part, etc. into the heat radiation fin of the control device equipped with the heat radiation fin, or attach it to the control device, and connect the wiring with the control device below. The heat shield plate 26 of the support container is formed by forming a circular plate or the like with a metal and then punching out the same to form an opening.

 In this hot plate, a silicon wafer or the like is placed on the hot plate, or after the silicon wafer or the like is held by support pins, an object to be heated such as a silicon wafer is heated and various operations are performed. be able to.

 When manufacturing the ceramic substrate for the hot plate, a ceramic substrate for electrostatic chuck can be manufactured by providing an electrostatic electrode inside the ceramic substrate, and a chuck top conductor layer is provided on a heating surface, By providing a guard electrode and a ground electrode inside a ceramic substrate, a ceramic substrate for a wafer prober can be manufactured.

 When the electrodes are provided inside the ceramic substrate, a conductive paste layer may be formed on the surface of the green sheet as in the case of forming the resistance heating element. When a conductor layer is formed on the surface of the ceramic substrate, a sputtering method or a plating method can be used, and these may be used in combination. BEST MODE FOR CARRYING OUT THE INVENTION

 Hereinafter, the present invention will be described in more detail.

(Examples 1-4, 6, 9) Production of hot plate (1) the aluminum nitride powder (Tokuyama Corp., average particle size 1. lm) 1 00 parts by weight, oxide Ittoriumu (Y ₂ 0 _3: Itsutoria, average particle _size: 0. 4 μ m) 4 parts by weight, an acrylic resin Binder 1. A composition comprising 1.5 parts by weight of alcohol was spray-dried to produce a granular powder.

 (2) Next, this granular powder was placed in a mold having a hexagonal cross section, and formed into a hexagonal flat plate to obtain a green body (green).

(3) The processed green compact was hot-pressed at a temperature of 1800 ° C. and a pressure of 2 OMPa (200 kg / cm ² ) to obtain a 3 mm thick aluminum nitride sintered body.

 Next, a disk having a diameter of 21 Omm was cut out from the sintered body to obtain a ceramic plate (ceramic substrate).

 Next, this plate is drilled to form a through hole for inserting the support pins of the semiconductor wafer and a bottomed hole for embedding the thermocouple (diameter: 1.1 mm, depth: 2 mm).

 (4) A conductor paste was printed by screen printing on the bottom surface of the sintered body obtained in (3) above. The printing pattern was concentric.

 As the conductive paste, Solvent PS603D manufactured by Tokuka Chemical Laboratory, which is used to form through holes in printed wiring boards, was used.

 This conductor paste is a silver-lead paste, and based on 100 parts by weight of silver, lead oxide (5% by weight), zinc oxide (55% by weight), silica (10% by weight), It contained 7.5 parts by weight of a metal oxide consisting of nitrogen (25% by weight) and alumina (5% by weight). The silver particles had a mean particle size of 4.5 μπι and were scaly.

 (5) Next, the ceramic substrate on which the conductor paste is printed is heated and baked at 780 ° C to sinter the silver and lead in the conductor paste and bake them on a sintered body, thereby forming a resistance heating element. Formed. The silver-lead lead resistance heating element 32 had a thickness of 5 μπι, a width of 2.4 mm, and a sheet resistivity of 7.7πιΩ / port.

(6) Water with a concentration of nickel sulfate 80 gZ1, sodium hypophosphite 24 g / l, sodium acetate 12 g / l, boric acid 8 gZl, ammonium chloride 6 g / 1 The sintered body prepared in (5) above is immersed in an electroless nickel plating bath composed of a solution, and a 1 μπι thick metal coating layer (nickel layer) is deposited on the surface of the silver-lead lead resistance heating element 32. I let it.

 (7) Silver-lead solder paste (manufactured by Tanaka Kikinzoku Co., Ltd.) was printed by screen printing on the part where external terminals for securing connection to the power supply were to be formed, forming a solder paste layer.

 Next, an external terminal made of Kovar is placed on the solder paste layer, heated and reflowed at 420 ° C, the external terminal is attached to the surface of the resistance heating element, and then a socket having a conductive wire is connected to the external terminal. Attached.

 (8) Insert a thermocouple for temperature control into the bottomed hole, fill with polyimide resin,

1. Curing was performed at 90 ° C for 2 hours, and the production of ceramic substrates for hot plates was completed. Thereafter, the ceramic substrate having the resistance heating element is fitted into a supporting container 10 having a structure as shown in FIG. 1, and the lead wire from the temperature measuring element (thermocouple) and the conduction from the end of the resistance heating element are applied. The lines were arranged as shown in FIG.

 In this supporting container, the outer frame portion and the heat shield plate are made of stainless steel having a diameter of 220 mm and a thickness of 1.5 mm, and the heat insulating ring 15 is made of a fluorine resin reinforced with glass fiber. Porto 18, fixture 17 and refrigerant supply pipe 19 are also made of stainless steel. Further, the heat shield plate 16 is provided with an opening having a diameter of 10 to 4 Omm, and the area ratio of the opening is 15% (Example 1), 30% (Example 2), 50% (Example 3). , 8% (Example 4) and 3% (Example 6). In addition, the total weight including the support container and accessories (total of the outer frame 11, heat shield plate 16, heat insulation ring 15, sleeve (guide pipe 12), and refrigerant supply pipe 19) TM 0.96 kg (Example 1), 0.86 kg (Example 2), 0.78 kg (Example 3), 0.99 kg (Example 4), 1.03 kg (Example Example 6) and 1.05 kg (Example 9). In Example 9, a refrigerant exhaust pipe (exhaust port) was formed in the outer frame portion 11. Details such as the weight of the support container are shown in Table 1.

 (Examples 5, 7, 8) Production of hot plate

Example 5 is basically similar to Example 1, except that the diameter of the opening is 2 Omm (Example 5) and 10 mm (Examples 7 and 8), and the opening of the heat shield plate 16 is Area ratio of The difference is that the ratio is 30% (Example 5) and 5% (Examples 7 and 8), and the thickness of the heat shield is 3 mm. In Example 7, an insole plate having openings (diameter 30 mm, 1 Omm, 8 mm) as shown in FIG. 11 was used. In this embodiment, since the thickness of the heat shield plate was 3 mm, the total weight including the supporting container and accessories (the outer frame portion 11, the heat shield plate 16, the midsole plate (only in the seventh embodiment), the heat insulating ring) 1,5, sleeve (guide tube 1 2) and refrigerant supply tube 19 total 1.42 kg (Example 5), 2.57 kg (Example 7), 3.72 kg (Example 8) ) And became heavy. Details of the weight of the supporting container are shown in Table 1.

 (Comparative Example 1) Manufacture of a hot plate in which an opening was not formed in a heat shield plate Basically, it was the same as in Example 1, except that no opening was provided and an exhaust port was formed in an outer frame portion. Weight (total of outer frame part 11, heat shield plate 16, heat insulation ring 15, sleep, exhaust port, refrigerant supply pipe 19) was 3.70 kg.

 (Comparative Example 2) Cooling

 After the same hot plate as that of Example 1 was manufactured, the hot plate was naturally cooled without introducing any refrigerant into the supporting container of the hot plate.

 (Examples 10 to 17)

 In this example, it is the same as Example 1, except that the diameter of the ceramic substrate is 31 Omm. In the supporting container, the outer frame portion and the heat shield plate are made of stainless steel having a diameter of 320 mm and a thickness of 1.5 mm, and the heat insulating ring 15 is made of a fluororesin reinforced with glass fiber. The refrigerant supply pipe 19 and the exhaust port are also made of stainless steel. The heat shield plate 16 is provided with an opening having a diameter of 8 to 3 Omm, and the area ratio of the opening is 10% (Example 10), 31% (Example 11), 51% (Example Examples 12), 8% (Example 13), 3% (Example 14), 5% (Examples 15 and 16), and 0% (Example 17).

In Example 15, an inner bottom plate having an opening as shown in FIG. 11 was used. Further, as shown in FIG. 12, a plurality of openings having different diameters were formed. In addition, the total weight including the support container and accessories (total of the outer frame part 11, heat shield plate 16, heat insulation ring 15, sleeve, refrigerant supply pipe 19, and exhaust cooling pipe) is 2. 3 1 kg (Example 10), 1.76 kg (Example 11), 1.50 kg (Example 1) Example 12), 2.76 kg (Example 13), 2.91 kg (Example 17), 7.OO kg (Example 15), 7.80 kg (Example 16), 3. 0 1 kg (Example 17). In Example 17, an exhaust port was formed in the outer frame portion. Comparative Example 3 was the same as Example 17 except that the thickness of the outer frame portion and the heat shield plate was set to 2. Omm. Details such as the weight of the supporting container are described in Table 1.

 Evaluation method

 (1) Cooling time

 The time required to decrease the temperature from 200 ° C to 25 ° C was measured.

 (2) Recovery time

 A silicon wafer at 25 ° C was placed in a state where the silicon wafer was heated to 140 ° C, and the time until the temperature of the silicon wafer recovered to 140 ° C was measured.

 (3) Overshoot temperature

When the temperature was raised to 200 ° C, we measured how much the maximum temperature was higher than the set temperature of 200 ° C.

Thickness Opening ratio Opening diameter Supporting weight Recovery time Overshooting (πιπι) Number of openings L 200 Weight of supporting container

3 (L / 200) ² Cooling time (min)

W \ V ^f ) ίΆΆ. Shino Actual 1 1.5 15 10 73 1.05 0.44 3.31 0.96 2 35 0.3 Example 2 1.5 30 20 36 1.05 0.39 3.31 0.86 2 35 0.3 Example 3 1.5 50 40 15 1,05 0.35 3.31 0.78 2 35 0.3 Example 4 1.5 8 10 39 1.05 0.45 3.31 0.99 3 35 0.3 Example 5 3.0 30 20 36 1.05 0.65 3.31 1.42 5 35 0.3 Example 6 1.5 3 10 20 1.05 0.48 3.31 1.03 3 35 0.3 Fine 7 3.0 5 10 20 丄 .05 0.81 3.31 2.57 3 35 0.3 Example 8 3.0 5 10 20 1.OS 0.81 3.31 3.72 5 60 1.0 Example 9 1.5 0 0 0 1.05 0.49 3.31 1.05 5 35 0.4 Example 辦 1.5 10 30 δ 1.55 1.3δ 7.21 2.31 2 35 0.3

 10 10

 8 80

Example 11 1.5 31 30 15 1.55 1.03 7.21 1.76 2 35 0.3

 10 30

 8? .40

Example 12 1.5 51 50 10 1.55 0.73 7.21 1.50 2 35 0.3

 30 30

Example 13 1.5 8 30 5 1.55 1.38 7.21 2.76 3 35 0.3

 10 10

 8 45

Example 14 Ι.δ 3 10 32 1.55 1.15 7.21 2.91 3 35 0.3 Example 15 1.5 5 10 51 1.55 1.45 7.21 7.00 3 40 0.4 Example 16 1.5 5 10 51 1.55 1.45 7.21 7.80 δ 60 1.0

¾Example 17 1.5 0 0 0 1.55 1.51 7.21 3.01 5 35 0.4 Comparative Example 1 4.5 0 0 0 1.05 1.26 3 31 3.70 10 60 1.0 Comparative Example 2 1.5 15 10 73 i.05 0.44 3.31 0.96 240 35 0.3 Comparative Example 3 2.0 0 0 0 1.55 1.99 7.21 7.80 10 60 1.0

As is clear from the results shown in Table 1, the time required to lower the temperature from 200 ° C to 25 ° C was 2 minutes in each of Examples 1 to 3, and in Examples 4 and 6, In Examples 7, 8, and 9, the time was 3 minutes, and in Examples 5, 8, and 9, the time was 5 minutes.

On the other hand, in Comparative Example 1 in which no opening was formed in the heat shield plate, it took as long as 10 minutes for the temperature to decrease even when the exhaust port was formed on the side surface. The weight exceeds L / 200 (kg), and the total weight including the supporting container and accessories exceeds 3 (L / 200) ² , and the recovery time and overshoot temperature are high.

 Further, as can be understood by comparing Example 6 and Example 9, the temperature reduction time can be reduced from 5 minutes to 3 minutes by forming an opening of 3% or more in the bottom plate (heat shield plate). In addition, it can be understood from Example 7 that the heat-fall time can be shortened by the presence of the heat shield plate (middle bottom plate).

Also, a comparison between Examples 7 and 8 shows that if the weight of the supporting container itself and the weight of the accessory exceed 3 (L / 200) ² , the recovery time and the overshoot temperature are affected. Further, from Example 9 and Comparative Example 1, when the weight of the support container exceeds L / 200, the cooling rate is reduced regardless of the presence or absence of the opening. In other words, the dominant factor in the cooling rate is not the opening but the weight of the supporting vessel.

 In Comparative Example 2, an even longer time was required, which was 240 minutes.

 The same phenomenon is understood in Examples 10 to 17. Comparing Example 17 with Example 14, it can be seen that at an aperture ratio of 3% or more, the temperature drop rate can be improved. Example 15 also shows that the midsole plate has the effect of improving the cooling rate.

Further, from a comparison between Examples 16 and 17, it can be seen that when the weight of the supporting container itself and the weight of the accessory parts exceed 3 (LZ200) ² , the recovery time and the overshoot temperature are affected. Further, from Example 17 and Comparative Example 3, when the weight of the supporting container exceeds LZ 200, the cooling rate is reduced regardless of the presence or absence of the opening. In other words, the controlling factor of the cooling rate is not the opening but the weight of the supporting container. . In addition, the warpage of the ceramic substrate of Examples 10 and 16 was measured using a shape measuring device (Nexip), and it was 9 m in Example 10 and was 9 m in Example 16. 15 / x ni. Although the opening ratio of the bottom plate is higher in the tenth embodiment, the amount of warpage is larger in the sixteenth embodiment. This is presumed to be because in Example 10, the openings having a plurality of diameters were formed, so that the distortion of the bottom plate was small, and as a result, the distortion of the supporting container could be prevented.

 From this, it is estimated that the main factor that determines the cooling rate is the weight of the supporting vessel, and the opening ratio is a secondary factor. However, when there is no opening, the cooling rate is significantly reduced. As described above, according to the present invention, the temperature reduction rate can be improved only by controlling the weight of the opening and the supporting container, and a device having a simple structure and low cost can be obtained. In addition, the recovery time and the overshoot temperature are affected by the total weight of the supporting container and the accessory parts, and it is possible to improve the temperature controllability by reducing the total weight. Industrial applicability

 As described above, according to the support container and the semiconductor manufacturing / inspection apparatus of the present invention, high-speed temperature reduction can be realized.

Claims

The scope of the claims

1. A support container for supporting a ceramic substrate, comprising a plate-like body, wherein a plurality of openings are formed in the plate-like body.

2. A support container for supporting a ceramic substrate, comprising a substantially cylindrical outer frame portion and a plate-like body, wherein the plate-like body has a plurality of openings formed therein. container.

3. The support container according to claim 2, wherein the plate-like body is connected and fixed to the substantially cylindrical outer frame portion.

4. The support container according to any one of claims 1 to 3, wherein the plurality of openings are a mixture of two or more types of openings having different diameters.

5. The relationship between the projected area SA of the plate-like body and the total area S of the openings provided in the plate-like body is 0.03≤S / SA, according to any one of claims 1 to 4. Support container.

6. The ring according to any one of claims 2 to 5, further comprising: a ring-shaped substrate receiving portion provided inside the outer frame portion and supporting the ceramic substrate fitted through a heat insulating ring. Support container.

7. The support container according to any one of claims 1 to 6, wherein a cooling medium supply port is formed in the plate-like body.

8. The support according to any one of claims 1 to 7, wherein the relationship between the weight M (kg) of the support container and the diameter L (mm) of the ceramic substrate is M≤LZ200.

9. Claims are provided, wherein the relationship between the total weight TM (kg) of the supporting container and the accessories and the diameter L (mm) of the ceramic substrate is TM≤3 (L / 200) ² . The support container according to any one of ranges 1 to 8.

10. A semiconductor manufacturing / inspection apparatus, wherein a ceramic substrate is supported and fixed on the support container according to any one of claims 1 to 9.

1 1. The semiconductor manufacturing / inspection apparatus according to claim 10, wherein a resistance heating element is provided on the ceramic substrate.

1 2. A support container for supporting a ceramic substrate, comprising a plate-like body, wherein the relationship between the weight M (kg) of the support container and the diameter L (mm) of the ceramic substrate is M≤L / 200. A support container characterized by the above-mentioned.

1 3. A supporting container for supporting a ceramic substrate, comprising a plate-shaped body and accessories, and having a total weight TM (kg) of the supporting container and the accessories and a diameter L (mm) of the ceramic substrate. The support vessel is characterized in that the relationship is TM 3 (L / 200) ² .

14. A support container for supporting a ceramic substrate, comprising a substantially cylindrical outer frame portion or a plate-like body, and a relationship between a weight M (kg) of the support container and a diameter (mm) of the ceramic substrate. A support container characterized by being MLZ200.

1 5. A support container for supporting a ceramic substrate, comprising a substantially cylindrical outer frame portion, a plate-like body and accessories, the total weight TM (kg) of the support container and the accessories and the ceramic substrate A support container characterized in that the relationship between the diameters L (mm) is TM≤3 (L / 200) ² .

16. The support container according to claim 14 or 15, wherein the plate-like body is connected and fixed to the substantially cylindrical outer frame portion.

17. The support container according to any one of claims 12 to 16, wherein a plurality of openings are formed in the plate-like body.

18. The support container according to any one of claims 12 to 17, wherein a thickness of a member constituting the support container is 0.1 to 5 mm.

1 9. A semiconductor manufacturing / inspection apparatus, wherein a ceramic substrate is supported and fixed to the support container according to any one of claims 12 to 18.

20. The semiconductor manufacturing / inspection apparatus according to claim 19, wherein the ceramic substrate is provided with a resistance heating element.