JPH07123202A - Picture device - Google Patents

Picture device

Info

Publication number
JPH07123202A
JPH07123202A JP5265615A JP26561593A JPH07123202A JP H07123202 A JPH07123202 A JP H07123202A JP 5265615 A JP5265615 A JP 5265615A JP 26561593 A JP26561593 A JP 26561593A JP H07123202 A JPH07123202 A JP H07123202A
Authority
JP
Japan
Prior art keywords
individual electrode
array
common electrode
wiring
flip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5265615A
Other languages
Japanese (ja)
Other versions
JP2889800B2 (en
Inventor
Shunji Murano
俊次 村野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP5265615A priority Critical patent/JP2889800B2/en
Publication of JPH07123202A publication Critical patent/JPH07123202A/en
Application granted granted Critical
Publication of JP2889800B2 publication Critical patent/JP2889800B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48095Kinked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating

Landscapes

  • Facsimile Heads (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE:To attain exact flip chip connection of a light receiving element array to a board, to use an inexpensive board, and to avoid improper contact due to difference from the bonding condition between the light receiving element array and a drive IC. CONSTITUTION:Common electrodes of LED arrays L1-L40 are connected to a 1st major side 34 of a common electrode board 30 and discrete electrodes of the arrays are in flip-chip connection to a 1st major side 4 of a discrete electrode board 2. The LED arrays are fixed to the board 30 and then in flip- chip connection to the board 2, and local heating by using hot air heater is applied to the connection. The boards 2,30 are set by a pin 56 to place spacers 52, 54 inbetween so as to avoid the board 2 from being tilted. The light from the LED arrays is led out through a throughhole provided to the board 2 and a reflection preventing section is provided to its inside. Furthermore, drive ICs 18,42 are arranged to a 2nd major side of the boards 2, 30.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の利用分野】この発明はLEDヘッドやイメージ
センサ、ELヘッド等の画像装置に関し、特にフリップ
チップ接続型の画像装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image device such as an LED head, an image sensor and an EL head, and more particularly to a flip chip connection type image device.

【0002】[0002]

【従来技術】LEDヘッドなどの画像装置において、受
発光アレイを基板にフリップチップ接続することが提案
されている(例えば実開昭63−180,249号公
報)。フリップチップ接続の利点は、高速で多数の接続
を行えることにある。しかしながらフリップチップ接続
には以下のような問題点があり、しかもこの点に言及し
た先行技術は見つからなかった。 1) 接続時に受発光アレイのバンプや受発光体などのパ
ターンが見えず、アレイの背面を見て搭載することにな
る。このためアレイの搭載精度が低下する。例えばアレ
イの外形と、実際の電極配置との間には最大で±100
μmもの誤差がある。 2) フリップチップ接続時のアレイの仮止めは、ボンデ
ィング前の状態ではフラックス等の表面張力で行い、ボ
ンディング時には半田等のバンプ材料の表面張力で行
う。しかしフラックスの表面張力は正確な仮止めには小
さすぎ、半田等の表面張力はフラックスが凝集しようと
する表面張力に阻害されて、正確な仮止めには使えな
い。 3) これらのため、受発光アレイを要求精度の±10μ
m以下の精度で搭載することは難しく、±50μm程度
の搭載精度となる。そしてこの結果、画像装置でのボン
ディングにフリップチップ接続を用いるのは困難にな
る。 4) フリップチップ接続ではアレイを加圧しながら接続
するが、圧力が均一に加わらずアレイを破壊することが
ある。 5) 発明者は、上記1) 〜4) の問題を避けるため、基板を
2枚用い、共通電極基板に受発光アレイの共通電極を固
定した状態で、個別電極基板の個別電極配線に受発光ア
レイをフリップチップ接続することを検討した(特願平
5−180,613号)。このようにすれば、フリップ
チップ接続時に受発光アレイのパターンが見え、アレイ
は共通電極基板に固定してあるので、フリップチップ接
続時にアレイが個別電極からずれることがなく、また2
枚の基板でサンドイッチするので全てのバンプを均一に
加圧することができる。しかしこれに伴って、2枚の基
板が傾き、平行にならないという問題が生じた。即ち基
板の間に細長い受発光アレイがあるだけでは、基板を平
行に保つことができず、基板が相対的に傾いてしまう。 6) 基板を2枚用いると、個別電極配線を受発光アレイ
に対して位置決めする必要が生じ、位置決めができない
場合、例えば1バンプずつずれて接続するなどの不良が
生じる。
2. Description of the Related Art Image pickup devices such as LED heads
Proposal of flip-chip connection of light emitting array to substrate
Have been published (for example, Kokai Sho 63-180,249
News). Flip-chip connection has the advantage of high speed and large number of connections
There is something that can be done. However flip chip connection
Has the following problems, and
No prior art was found. 1)  When connecting, the bumps of the light emitting and receiving array and the pattern of the light receiving and emitting
You can't see the turns, you should look at the back of the array and mount it.
It Therefore, the mounting accuracy of the array is reduced. For example
± 100 at maximum between the outer shape of b and the actual electrode arrangement
There is an error of μm. 2)  The array is temporarily fixed when the flip chip connection is used.
In the state before swinging, use surface tension such as flux to
Surface tension of the bump material such as solder during bonding.
U However, the surface tension of the flux is small for accurate temporary fixing.
If the surface tension of solder or the like is too high, the flux will try to aggregate.
It cannot be used for accurate temporary fixing because it is hindered by surface tension.
Yes. 3)  For these reasons, the light emitting / receiving array must have a required accuracy of ± 10μ.
It is difficult to mount with an accuracy of m or less, about ± 50 μm
It becomes the mounting accuracy of. As a result, the
Using flip-chip bonding becomes difficult
It Four)  Flip-chip connection while pressing the array
However, the pressure may not be evenly applied and the array may be destroyed.
is there. Five)  The inventor mentioned above 1) ~Four) To avoid the problem of
Two electrodes are used and the common electrode of the light emitting / receiving array is fixed on the common electrode substrate.
In the fixed state, the individual electrode wiring on the individual electrode substrate receives and emits light.
We considered flip-chip connection of Ray (Patent application
5-180, 613). If you do this, flip
The pattern of the light emitting and receiving array can be seen when the chip is connected, and the array
Is fixed to the common electrode substrate, so flip chip
The array does not shift from the individual electrodes during subsequent
Since it is sandwiched with one board, all bumps are uniform
It can be pressurized. However, along with this, two bases
There was a problem that the plates tilted and did not become parallel. I.e.
If there is an elongated light emitting and receiving array between the plates, the
The line cannot be kept in line and the substrate is relatively tilted. 6)  When two substrates are used, individual electrode wiring is received and emitted by the light emitting array
Need to be positioned with respect to, and cannot be positioned
In this case, for example, if there is a defect such as connecting one bump at a time
Occurs.

【0003】発明者は、これらのこととは別の問題とし
て、画像装置の基板について検討した。通常用いられる
基板はガラス基板に薄膜配線を施したものであるが、ガ
ラス基板は高価であり、かつ薄膜配線は形成に時間がか
かり、量産性に欠ける。また薄膜配線は基板への付着力
が低い。そこで硬質プリント基板等のより安価な基板を
用いる必要がある。次に画像装置では高密度配線が必要
になるが、ガラス基板ではスルーホールなどを利用して
両面配線を行うことが困難である。そこで不透明な硬質
プリント基板等を用い、受発光アレイをフリップチップ
接続し、基板に透孔を用いて光が通過できるようにする
ことを検討した。すると、透孔の内面での光の反射が問
題になる。即ち透孔の幅は、受発光体の幅よりやや大き
い100μm程度となり、基板はこれよりも厚いために
透孔内面での反射が問題になる。
The inventor has examined a substrate of an image device as another problem other than the above. A commonly used substrate is a glass substrate provided with thin film wiring, but the glass substrate is expensive, and it takes time to form the thin film wiring, which is not suitable for mass production. In addition, the thin film wiring has low adhesion to the substrate. Therefore, it is necessary to use a cheaper board such as a hard printed board. Next, the image device requires high-density wiring, but it is difficult to perform double-sided wiring using a through hole or the like on a glass substrate. Therefore, we examined using an opaque rigid printed circuit board, etc., to flip-chip connect the light emitting and receiving array, and use a through hole in the board to allow light to pass through. Then, the reflection of light on the inner surface of the through hole becomes a problem. That is, the width of the through hole is about 100 μm, which is slightly larger than the width of the light receiving and emitting body, and the substrate is thicker than this, so that reflection on the inner surface of the through hole becomes a problem.

【0004】これ以外にフリップチップ接続には、次の
問題がある。受発光アレイの駆動IC,例えば共通電極
の駆動ICと個別電極の駆動ICは、一般に受発光アレ
イとは高さが異なる。このため、受発光アレイと駆動I
Cとを同時にフリップチップ接続することは難しい。ま
た駆動ICと受発光アレイとではバンプサイズも異な
り、一般に駆動ICの方がバンプは高密度で、そのサイ
ズも小さい。バンプのサイズやピッチ等の接続条件が異
なるものを同時にフリップチップ接続すると、接続不良
が増加する。また駆動ICのバンプを受発光アレイのバ
ンプと同時にフリップチップ接続すると、接続点数が増
し接続不良はさらに増加する。
In addition to this, the flip chip connection has the following problems. The drive ICs of the light emitting / receiving array, for example, the drive ICs of the common electrode and the drive ICs of the individual electrodes are generally different in height from the light receiving / emitting array. Therefore, the light emitting / receiving array and the drive I
It is difficult to flip-chip connect C and C at the same time. Further, the bump size is different between the drive IC and the light emitting / receiving array, and in general, the drive IC has a higher density of bumps and a smaller size. Simultaneous flip-chip connection of bumps with different connection conditions such as size and pitch leads to increased connection failure. Further, when the bumps of the driving IC are flip-chip connected at the same time as the bumps of the light receiving and emitting array, the number of connection points increases and the connection failure further increases.

【0005】[0005]

【発明の課題】 請求項1の発明は、フリップチップ接続
型の画像装置において、以下のことを課題とする。 1) 受発光アレイのパターンを見ながらフリップチップ
接続することを可能にし、アレイの搭載精度を高める。 2) フリップチップ接続時のアレイの仮止め精度を高
め、アレイの搭載精度を高める。 3) フリップチップ接続時に、全ての受発光アレイを均
一に加圧できるようにし、アレイの損傷を防止する。 4) 安価な硬質プリント基板等の使用を可能にし、かつ
基板に両面配線を施し、配線密度を低下させる。 5) 2枚の基板が傾くのを防止し、2枚の基板を平行に
保つ。
Problem to be Solved The invention of claim 1 is flip-chip connection.
The following problems are to be solved in a mold type image device. 1)  Flip chip while watching the pattern of the light emitting and receiving array
It enables connection and enhances mounting accuracy of the array. 2)  High accuracy of temporary fixing of array when flip chip connection
Therefore, the mounting accuracy of the array is improved. 3)  All the light emitting and receiving arrays are leveled when flip chip connection is performed.
Allows a single pressurization to prevent damage to the array. Four)  Enables the use of inexpensive hard printed circuit boards, and
Apply double-sided wiring to the board to reduce wiring density. Five)  Prevent the two boards from tilting and keep the two boards parallel.
keep.

【0006】請求項2の発明の課題は、上記1) 〜5) に加
えて、 6) 個別電極配線を受発光アレイに対し正確に位置決め
することにある。請求項3の発明の課題は、上記1) 〜5)
に加えて、7) 個別配線基板に設けた透孔での光の反射
を防止し、画像品位を向上させる、ことにある。請求項
4の発明の課題は、上記1) 〜5) に加えて、8) 共通電極
駆動ICや個別電極駆動ICの高さが受発光アレイより
も高く、バンプのサイズやバンプのピッチが受発光アレ
イと異なっても、フリップチップ接続の障害とならない
ようにすることにある。請求項5の発明の課題は、上記
1) 〜5) に加えて、9) 個別電極基板への透孔の形成を容
易にし、しかも個別電極基板が傾かないようにすること
にある。請求項6の発明の課題は、上記1) 〜5) に加え
て、10) フリップチップ接続をさらに容易にし、特に
接続が正しいかどうかを検査した後に、最終的に接続す
ることができるようにすることにある。請求項7の発明
の課題は、上記1) 〜5) に加えて、11) 共通電極駆動I
Cや個別電極駆動ICを、受発光アレイと同時にフリッ
プチップ接続し、しかもスペーサをこれらのもので兼用
できるようにすることにある。請求項8の発明の課題
は、上記1) 〜5) に加えて、12) バンプを正確に配列し
てフリップチップ接続を容易にし、かつ個別電極基板の
平坦度が低い場合にも接続を容易にすることにある。
The subject of the invention of claim 2 is the above 1). ~Five) In addition to
Yes, 6)  Accurate positioning of individual electrode wiring with respect to the light emitting / receiving array
To do. The subject of the invention of claim 3 is the above 1). ~Five)
In addition to 7)  Reflection of light through the through holes on the individual wiring board
To improve the image quality. Claim
The problem of the invention of No. 4 is 1) above. ~Five) In addition to 8)  Common electrode
The height of the driving IC or individual electrode driving IC is higher than that of the light emitting / receiving array.
The bump size and bump pitch are both high and low.
Even if it is different from B, it does not hinder the flip chip connection.
To do so. The subject of the invention of claim 5 is the above
1) ~Five) In addition to 9)  Allows formation of through holes on individual electrode substrates
It is easy and the individual electrode board is not tilted.
It is in. The subject of the invention of claim 6 is the above 1). ~Five) In addition to
10)  Flip-chip connection made easier, especially
After checking whether the connection is correct, finally connect
To be able to do so. Invention of Claim 7
The above is 1) above. ~Five) In addition to 11)  Common electrode drive I
Flip the C and individual electrode drive IC at the same time as the light emitting and receiving array.
Chip chip connection, and these are also used as spacers
To be able to do it. Problem of Invention of Claim 8
Is 1) above ~Five) In addition to 12)  Accurately arrange the bumps
Facilitates flip-chip connection, and
It is to facilitate the connection even when the flatness is low.

【0007】[0007]

【発明の構成】この発明の画像装置は、第1の主面に共
通電極配線を設けた共通電極基板と、第1の主面に個別
電極配線を、第2の主面に裏面配線を設け、これらの両
配線をスルーホールで接続した個別電極基板とを設け、
受発光アレイの底面の共通電極を前記共通電極配線に結
合し、アレイ表面の個別の受発光体に接続した電極を前
記個別電極配線にフリップチップ接続して、前記受発光
アレイを共通電極基板と個別電極基板とでサンドイッチ
し、さらに個別電極基板には、前記アレイの受発光体に
対応した位置に透孔を設け、かつ個別電極基板と共通電
極基板との間に受発光アレイとほぼ等しい高さのスペー
サを配設したことを特徴とする。
According to the image device of the present invention, a common electrode substrate having a common electrode wiring on a first main surface, an individual electrode wiring on a first main surface, and a rear surface wiring on a second main surface are provided. , And an individual electrode substrate that connects both of these wires with through holes,
A common electrode on the bottom surface of the light emitting / receiving array is coupled to the common electrode wiring, and electrodes connected to individual light receiving / emitting bodies on the array surface are flip-chip connected to the individual electrode wiring to form the light receiving / emitting array as a common electrode substrate. It is sandwiched with an individual electrode substrate. Further, the individual electrode substrate is provided with a through hole at a position corresponding to the light receiving and emitting body of the array, and the height between the individual electrode substrate and the common electrode substrate is almost equal to that of the light receiving and emitting array. A spacer is provided.

【0008】またこの発明の画像装置は、前記共通電極
基板と個別電極基板とを、ピンで位置決めしたことを特
徴とする(請求項2)。この発明の画像装置はさらに、
前記透孔の内面に反射防止部を設け、透孔での光の反射
を防止したことを特徴とする(請求項3)。この発明の
画像装置はまた、前記共通電極基板の第2の主面に共通
電極駆動ICを設け、前記個別電極駆動基板の第2の主
面に個別電極駆動ICを設けたことを特徴とする(請求
項4)。
The image device of the present invention is characterized in that the common electrode substrate and the individual electrode substrate are positioned by pins (claim 2). The image device of the present invention further includes
An antireflection portion is provided on the inner surface of the through hole to prevent light from being reflected by the through hole (claim 3). The image device of the present invention is also characterized in that a common electrode drive IC is provided on the second main surface of the common electrode substrate, and an individual electrode drive IC is provided on the second main surface of the individual electrode drive substrate. (Claim 4).

【0009】この発明の画像装置は、前記個別電極基板
を、前記透孔を延長した線に沿って切断した2枚の基板
で構成したことを特徴とする(請求項5)。この発明の
画像装置は、前記個別電極基板と共通電極基板との間に
樹脂を充填し、樹脂の収縮力で前記フリップチップ接続
を行うようにしたことを特徴とする(請求項6)。この
発明の画像装置は、前前記共通電極駆動ICと個別電極
駆動ICを、前記受発光アレイとほぼ等しい厚さとし、
かつ共通電極駆動ICを共通電極配線に、個別電極駆動
ICを個別電極配線にそれぞれフリップチップ接続した
ことを特徴とする(請求項7)。この発明の画像装置
は、前記フリップチップ接続に用いるバンプを、受発光
アレイ表面に設けたスタッドバンプで構成したことを特
徴とする(請求項8)。
The image device of the present invention is characterized in that the individual electrode substrate is composed of two substrates cut along a line extending from the through hole (claim 5). The image device according to the present invention is characterized in that a resin is filled between the individual electrode substrate and the common electrode substrate, and the flip-chip connection is performed by a contracting force of the resin (claim 6). In the image device according to the present invention, the common electrode drive IC and the individual electrode drive IC have substantially the same thickness as the light receiving and emitting array.
Further, the common electrode drive IC is flip-chip connected to the common electrode wiring and the individual electrode drive IC is connected to the individual electrode wiring by flip-chip connection (claim 7). The image device of the present invention is characterized in that the bumps used for the flip-chip connection are constituted by stud bumps provided on the surface of the light receiving and emitting array.

【0010】受発光アレイには例えばLEDアレイ、E
Lアレイ、プラズマアレイ、CCDアレイなどを用い
る。基板には硬質プリント基板やフレキシブルプリント
基板などの、安価でスルーホール加工が容易な基板が好
ましい。
The light emitting / receiving array is, for example, an LED array, E
An L array, plasma array, CCD array or the like is used. The substrate is preferably a hard printed circuit board, a flexible printed circuit board or the like, which is inexpensive and easy to process through holes.

【0011】[0011]

【発明の作用】請求項1の発明では、受発光アレイを共
通電極基板と個別電極基板とでサンドイッチし、個別電
極基板の第1の主面に設けた個別電極配線にフリップチ
ップ接続する。また個別電極基板には透孔を設け、光が
出入りできるようにする。このようにすると、受発光ア
レイの底面の共通電極を共通電極配線に結合した後に、
個別電極基板をセットし、フリップチップ接続すること
ができる。このためアレイ表面の電極を見ながら、個別
電極配線をセットすることができ、アレイの搭載精度が
向上する。次に受発光アレイは底面を共通電極に結合し
た後にフリップチップ接続するので、フラックスや半田
等のバンプ材料の仮止めの力が弱くても、受発光アレイ
は動かない。フラックスやバンプ材料による仮止めの力
は弱いので、個別電極基板が受発光アレイに対して移動
することが考えられるが、画像装置の場合、受発光アレ
イの数は多く、バンプの点数はきわめて多い。このため
個々のバンプでの仮止めの力が弱くても、個別電極基板
を多数のバンプで仮止めし、受発光アレイに対して固定
してフリップリップ接続することができる。アレイの電
極を見ながら個別電極基板をセットでき、アレイを共通
電極配線に結合した後にフリップリップ接続できるの
で、フリップチップ接続の精度はきわめて向上し、容易
に搭載誤差を±10μm以下に小さくすることができ
る。次にフリップチップ接続は、受発光アレイを2枚の
基板でサンドイッチして行う。このためフリップチップ
接続に用いる全てのバンプを均一に加圧することがで
き、接続の信頼性が増すと共に、アレイの損傷を防止す
ることができる。
According to the first aspect of the invention, the light emitting / receiving array is sandwiched between the common electrode substrate and the individual electrode substrate and flip-chip connected to the individual electrode wiring provided on the first main surface of the individual electrode substrate. Further, through holes are provided in the individual electrode substrate so that light can go in and out. In this way, after connecting the common electrode on the bottom surface of the light emitting and receiving array to the common electrode wiring,
The individual electrode substrate can be set and flip-chip connected. Therefore, the individual electrode wiring can be set while looking at the electrodes on the array surface, and the mounting accuracy of the array is improved. Next, since the bottom surface of the light receiving and emitting array is bonded to the common electrode and flip chip connection is performed, the light receiving and emitting array does not move even if the force of temporarily fixing the bump material such as flux or solder is weak. Since the temporary fixing force by the flux and the bump material is weak, the individual electrode substrate may move with respect to the light emitting / receiving array, but in the case of the image device, the number of light emitting / receiving arrays is large and the number of bumps is extremely large. . Therefore, even if the temporary fixing force of the individual bumps is weak, the individual electrode substrate can be temporarily fixed with a large number of bumps and fixed to the light emitting / receiving array for flip-lip connection. The individual electrode substrate can be set while looking at the array electrodes, and the flip-chip connection can be performed after the array is connected to the common electrode wiring, so the accuracy of flip-chip connection is greatly improved, and the mounting error can be easily reduced to ± 10 μm or less. You can Next, flip-chip connection is performed by sandwiching the light emitting / receiving array between two substrates. Therefore, all the bumps used for flip-chip connection can be uniformly pressed, the reliability of the connection can be increased, and damage to the array can be prevented.

【0012】請求項1の発明では、共通電極基板や個別
電極基板に、硬質プリント基板やフレキシブルプリント
基板等のスルーホール加工が容易な基板を用い、例えば
基板を双方とも硬質プリント基板とする、あるいは一方
を硬質プリント基板とし、他方をフレキシブルプリント
基板とする。個別電極基板の第2の主面(受発光アレイ
と反対側の主面)に裏面配線を設け、第1の主面(受発
光アレイ側の主面)の個別電極配線にスルーホールで接
続する。配線密度が高いのは個別電極基板であるが、両
面配線を施しその間をスルーホールで接続したので、基
板の配線密度が低下し、高価な薄膜配線に替えて、安価
なプリント配線等を用いることができるようになる。ま
た2枚の基板の間には、受発光アレイとほぼ等しい高さ
のスペーサを配設し、基板が傾くのを防止し、2枚の基
板が平行に保たれるようにする。
According to the first aspect of the present invention, the common electrode substrate or the individual electrode substrate is a substrate such as a hard printed circuit board or a flexible printed circuit board, which is easy to process through holes. For example, both of the substrates are hard printed circuit boards, or One is a rigid printed circuit board and the other is a flexible printed circuit board. A back surface wiring is provided on the second main surface (the main surface opposite to the light emitting / receiving array) of the individual electrode substrate, and is connected to the individual electrode wiring on the first main surface (the main surface on the light emitting / receiving array side) by a through hole. . The wiring density is high in the individual electrode substrate, but since double-sided wiring is applied and the spaces between them are connected by through holes, the wiring density of the substrate decreases, and inexpensive printed wiring should be used instead of expensive thin film wiring. Will be able to. Further, a spacer having a height substantially equal to that of the light emitting / receiving array is provided between the two substrates to prevent the substrates from tilting and keep the two substrates parallel to each other.

【0013】請求項2の発明では、2枚の基板をピンで
位置決めし、個別電極基板を受発光アレイに対して正確
に位置決めする。また請求項3の発明では、個別電極基
板に設けた透孔に反射防止部を設ける。この結果、厚い
硬質プリント基板を用いる場合でも、透孔の内面での光
の反射を防止することができ、画像品位が向上する。さ
らに請求項4の発明では、基板の第2の主面に駆動IC
(共通電極駆動ICと個別電極駆動IC)を配置するの
で、チップの高さやバンプのピッチあるいはバンプのサ
イズ等が異なる駆動ICと受発光アレイとを、同時にフ
リップチップ接続する必要がなくなる。さらに駆動IC
を共通電極基板や個別電極基板の第2の主面側に配置す
ると、受発光アレイのフリップチップ接続時の接続バン
プの数が減少し、接続が容易になる。これらの結果、フ
リップチップ接続が容易になり、接続の信頼性も大幅に
向上する。
According to the second aspect of the present invention, the two substrates are positioned by the pins, and the individual electrode substrate is accurately positioned with respect to the light emitting / receiving array. Further, in the invention of claim 3, the antireflection portion is provided in the through hole provided in the individual electrode substrate. As a result, even when a thick hard printed board is used, it is possible to prevent reflection of light on the inner surface of the through hole and improve the image quality. Further, in the invention of claim 4, the driving IC is provided on the second main surface of the substrate.
Since the common electrode driving IC and the individual electrode driving IC are arranged, it is not necessary to simultaneously flip-chip connect the driving IC and the light emitting / receiving array having different chip heights, bump pitches, bump sizes, or the like. Further drive IC
Is arranged on the second main surface side of the common electrode substrate or the individual electrode substrate, the number of connection bumps at the time of flip chip connection of the light emitting and receiving array is reduced, and the connection is facilitated. As a result, the flip chip connection is facilitated and the connection reliability is significantly improved.

【0014】請求項5の発明では、個別電極基板を2枚
に分割し、透孔の形成を容易にする。組立後の個別電極
基板は、受発光アレイやスペーサ等で支えられて傾かな
い。請求項6の発明では、個別電極基板と共通電極基板
との間に樹脂を充填する。フリップチップ接続部は樹脂
の力で仮止めでき、最終結合前に受発光アレイを動作さ
せ、検査できる。また樹脂の収縮力で接続部の接触が保
たれると共に、樹脂で個別電極基板と両面配線基板とを
固定し、フリップチップ接続部に無理が加わるのを防止
できる。請求項7の発明では、共通電極駆動ICや個別
電極駆動ICを受発光アレイと同時にフリップチップ接
続し、しかもスペーサをこれらのもので兼用する。請求
項8の発明では、フリップチップ接続のバンプに、受発
光アレイに設けたスタッドバンプを用いる。このバンプ
は受発光アレイを共通電極基板に配列した後に形成でき
るので、正確にバンプを配列できる。高い背の高いバン
プを形成できるので、個別電極配線の平坦度の不足をバ
ンプの変形で補い、平坦度の低い個別電極基板でも、ア
レイ表面の平坦度を低下させずに接続することができ
る。
According to the invention of claim 5, the individual electrode substrate is divided into two to facilitate the formation of the through holes. The assembled individual electrode substrate is supported by the light emitting / receiving array, spacers, etc. and does not tilt. In the invention of claim 6, resin is filled between the individual electrode substrate and the common electrode substrate. The flip chip connection can be temporarily fixed by the force of the resin, and the light emitting and receiving array can be operated and tested before final bonding. Further, the contraction force of the resin keeps the contact of the connecting portion, and the resin is used to fix the individual electrode substrate and the double-sided wiring substrate to prevent the flip chip connecting portion from being overloaded. According to the invention of claim 7, the common electrode driving IC and the individual electrode driving IC are flip-chip connected at the same time as the light receiving and emitting array, and these spacers are also used. In the eighth aspect of the invention, the stud bumps provided in the light emitting / receiving array are used as the bumps for flip chip connection. Since the bumps can be formed after the light emitting / receiving array is arranged on the common electrode substrate, the bumps can be arranged accurately. Since a high tall bump can be formed, the lack of flatness of the individual electrode wiring can be compensated by the deformation of the bump, and even an individual electrode substrate having a low flatness can be connected without lowering the flatness of the array surface.

【0015】[0015]

【実施例】図1〜図6に実施例を示し、図1に個別電極
基板を、図2に共通電極基板を、図3に組立後の画像装
置を、図4,図5にそれらの断面を、図6に熱風加熱に
よるフリップチップ接続を示す。実施例ではLEDヘッ
ドを例にするが、受発光アレイを他の物に変えれば、イ
メージセンサやELヘッド等の他の画像装置となる。ま
た図には画像装置の主要部を示し、レンズアレイやハウ
ジングなどの周知部分は省略する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments are shown in FIGS. 1 to 6, FIG. 1 shows an individual electrode substrate, FIG. 2 shows a common electrode substrate, FIG. 3 shows an assembled image device, and FIGS. FIG. 6 shows flip chip connection by hot air heating. Although an LED head is used as an example in the embodiment, another image device such as an image sensor or an EL head can be obtained by replacing the light emitting / receiving array with another object. The drawing shows the main part of the image device, and omits well-known parts such as a lens array and a housing.

【0016】図1において、2は硬質プリント基板で、
フレキシブルプリント基板等でもよく、4はその第1の
主面、6はその第2の主面である。8は透孔で、LED
アレイL1〜L40の発光体に対応した位置に設け、そ
の幅は100μm程度とする。10は個別電極配線で、
12は個別電極配線10の透孔8側に設けたバンプ列で
ある。LEDアレイL1〜L40の個数を40個、LE
Dアレイ当たりの発光体の数を64個とすると、接続す
べきバンプの総数は2560個となる。これに対して個
別電極配線10は、透孔8の上下に各20組ずつ設け、
合計で40組設ける。そして1つの個別電極配線10当
たりのバンプの数は64個で、1つの個別電極配線10
には2組のバンプ列12,12を設けるので、1つのバ
ンプ列12当たりのバンプの数は32個となる。個別電
極配線10はLEDアレイL1〜L40の2個単位で設
け、中央で折り返してバンプ列12,12に各々32個
の電極をフリップチップ接続する。1つのLEDアレイ
には64個の電極があるが、そのうち32個を図の下側
のバンプ列にフリップチップ接続し、残る32個を上側
のバンプ列12にフリップチップ接続する。この結果、
各個別電極配線10は各々32本の信号線でよいことに
なる。
In FIG. 1, 2 is a rigid printed circuit board,
It may be a flexible printed circuit board or the like, and 4 is its first main surface and 6 is its second main surface. 8 is a through hole, LED
It is provided at a position corresponding to the light emitters of the arrays L1 to L40, and its width is about 100 μm. 10 is an individual electrode wiring,
Reference numeral 12 denotes a bump row provided on the side of the through hole 8 of the individual electrode wiring 10. The number of LED arrays L1 to L40 is 40, LE
If the number of light emitters per D array is 64, the total number of bumps to be connected is 2560. On the other hand, the individual electrode wiring 10 is provided in each of 20 sets above and below the through hole 8,
A total of 40 sets will be provided. The number of bumps per individual electrode wiring 10 is 64, and one individual electrode wiring 10
Since two sets of bump rows 12 and 12 are provided in the above, the number of bumps per bump row 12 is 32. The individual electrode wiring 10 is provided in units of two of the LED arrays L1 to L40, is folded back at the center, and 32 electrodes are flip-chip connected to the bump rows 12 and 12, respectively. There are 64 electrodes in one LED array, 32 of which are flip-chip connected to the lower bump row in the figure, and the remaining 32 are flip-chip connected to the upper bump row 12. As a result,
Each individual electrode wiring 10 may be 32 signal lines.

【0017】LEDアレイL1〜L40では、各発光体
毎に電極をアレイの片側に引き出し、電極の配置はアレ
イの中心線X−Xに関して線対称に配置する。これは個
別電極配線10によって定まることで、例えばLEDア
レイL1の最初の発光体に接続した電極を下側の個別配
線10に接続したとすれば、31番目の発光体までは、
奇数番目の発光体の電極を下側の個別配線10に接続
し、以降34から64番目の発光体では、偶数番目の発
光体を下側の個別配線10に接続する。次に2〜30番
目の偶数番目の発光体に接続した電極を上側の個別配線
10に接続し、32番目と33番目の発光体の電極も上
側の個別配線10に接続し、35番目から63番目まで
の奇数番目の発光体を上側の個別配線10に接続する。
これはLEDアレイ毎に、個別配線10とLEDアレイ
L1〜L40の発光体との接続の順序が反転するから
で、1番目の発光体と64番目の発光体とは常に個別配
線10での同じ信号線に接続する必要があるからであ
る。また同様に2番目の発光体と63番目の発光体も常
に同じ信号線に接続する必要があるからである。そこで
上記のように、LEDアレイL1〜L40の32番目の
発光体と33番目の発光体との間(X−X線)を境にし
て、電極の配置を線対称にすれば、LEDアレイ毎に個
別配線10の向きが反転しても、常に正しい位置にLE
DアレイL1〜L40側の電極を接続することができ
る。
In the LED arrays L1 to L40, an electrode is led out to one side of the array for each light emitter, and the electrodes are arranged in line symmetry with respect to the center line XX of the array. This is determined by the individual electrode wiring 10. For example, if the electrode connected to the first light emitting body of the LED array L1 is connected to the lower individual wiring 10, up to the 31st light emitting body,
The electrodes of the odd-numbered light emitters are connected to the lower individual wiring 10, and in the 34th to 64th light emitters, the even-numbered light emitters are connected to the lower individual wiring 10. Next, the electrodes connected to the 2nd to 30th even light emitters are connected to the upper individual wiring 10, and the electrodes of the 32nd and 33rd light emitters are also connected to the upper individual wiring 10. The odd-numbered light emitters up to the th are connected to the upper individual wiring 10.
This is because the order of connection between the individual wiring 10 and the light emitters of the LED arrays L1 to L40 is reversed for each LED array, and therefore the first light emitter and the 64th light emitter are always the same in the individual wire 10. This is because it is necessary to connect to the signal line. Similarly, the second light emitting body and the 63rd light emitting body also need to be always connected to the same signal line. Therefore, as described above, if the electrodes are arranged in line symmetry with the boundary between the 32nd light emitting body and the 33rd light emitting body (X-X line) of the LED arrays L1 to L40 as a boundary, then each LED array Even if the direction of the individual wiring 10 is reversed, LE is always in the correct position.
The electrodes on the D array L1 to L40 side can be connected.

【0018】バンプ列12の材料には例えばフラックス
含有の半田を用い、LEDアレイL1〜L40の電極側
にはフリップチップ接続部に金メッキなどを施してお
く。しかしいずれの側にバンプを設けるかは任意で、L
EDアレイL1〜L40側にバンプを設けても良い。
For the material of the bump row 12, for example, solder containing flux is used, and on the electrode side of the LED arrays L1 to L40, the flip chip connection portion is plated with gold or the like. However, it does not matter which side the bump is provided on.
Bumps may be provided on the ED arrays L1 to L40 side.

【0019】14は第2の主面6に設けた裏面配線で、
透孔8の上下に各々32本ずつの信号線を配置して設
け、16は裏面配線14と個別電極配線10とを接続す
るためのスルーホールの列である。スルーホールには大
きな面積が必要なので、1列に配置すると個別電極配線
10からはみ出してしまう。そこでスルーホール列16
は2列に設け、かつ基板2の長手方向に対して斜めに配
置し、狭い個別電極配線10の範囲にスルーホール列1
6を設けることができるようにする。
Reference numeral 14 is a backside wiring provided on the second main surface 6,
32 signal lines are arranged above and below the through hole 8, and 16 is a row of through holes for connecting the rear surface wiring 14 and the individual electrode wiring 10. Since a large area is required for the through holes, if they are arranged in one row, they will protrude from the individual electrode wiring 10. So through hole row 16
Are arranged in two rows and are arranged obliquely with respect to the longitudinal direction of the substrate 2, and the through hole row 1 is provided in a narrow range of the individual electrode wiring 10.
6 can be provided.

【0020】18はLEDアレイL1〜L40の個別の
電極を駆動するための個別電極駆動ICで、LEDアレ
イL1〜L40とはチップの高さも異なり、端子の数が
多いためバンプの数も多く、かつそのサイズは小さく、
配列ピッチも小さい。このため個別電極駆動IC18は
LEDアレイL1〜L40とは反対側の主面6に配置
し、フリップチップ条件の違いによる接続の難しさを回
避する。20は外部接続端子である。個別電極駆動IC
18は、外部接続端子20や裏面配線14に接続する必
要がある。この接続はフリップチップ接続でも良いが、
フリップチップ接続に用いるフラックスによって個別電
極駆動IC18が汚染されることを避けるため、特に駆
動IC18のバンプ以外の部分をマスクした保護膜にピ
ンホールがあると、そこからフラックスが侵入し、駆動
IC18の配線を侵すことを防止するため、好ましくは
ワイヤボンド接続とする。22はピン穴で、個別電極配
線10と同時に形成したマークを用いて設けたものであ
る。このためピン穴22は個別電極配線10に対して±
5μm程度の精度で形成することができる。
Reference numeral 18 denotes an individual electrode driving IC for driving the individual electrodes of the LED arrays L1 to L40. The chip height is different from that of the LED arrays L1 to L40 and the number of terminals is large, so that the number of bumps is large. And its size is small,
The array pitch is also small. Therefore, the individual electrode drive IC 18 is arranged on the main surface 6 on the side opposite to the LED arrays L1 to L40 to avoid the difficulty of connection due to the difference in flip chip conditions. 20 is an external connection terminal. Individual electrode drive IC
18 needs to be connected to the external connection terminal 20 and the back wiring 14. This connection may be flip chip connection,
In order to prevent the individual electrode driving IC 18 from being contaminated by the flux used for the flip chip connection, especially if there is a pinhole in the protective film that masks a portion other than the bump of the driving IC 18, the flux will penetrate from there and the driving IC 18 will be exposed. A wire bond connection is preferably used to prevent the wiring from being damaged. Reference numeral 22 denotes a pin hole, which is provided by using a mark formed at the same time as the individual electrode wiring 10. Therefore, the pin hole 22 is ± with respect to the individual electrode wiring 10.
It can be formed with an accuracy of about 5 μm.

【0021】図2に、共通電極基板30を示す。共通電
極基板30には例えば硬質プリント基板を用い、32は
その第1の主面、34はその第2の主面である。36は
共通電極配線で、38は第2の主面34側に接続するた
めのスルーホール、40は共通電極配線36に接続した
銀ペースト等の導電性接着剤で、LEDアレイL1〜L
40の底面の共通電極を結合する。共通電極基板30の
第2の主面34には、LEDアレイL1〜L40を1個
ずつ時分割駆動するための共通電極駆動IC42を設
け、ワイヤボンディングパッド44を介して共通電極配
線36に接続する。また46は裏面バスで、外部接続端
子48と共通電極駆動IC42とを接続するためのもの
である。
FIG. 2 shows the common electrode substrate 30. For example, a hard printed circuit board is used for the common electrode substrate 30, 32 is a first main surface thereof, and 34 is a second main surface thereof. 36 is a common electrode wiring, 38 is a through hole for connecting to the second main surface 34 side, 40 is a conductive adhesive such as silver paste connected to the common electrode wiring 36, and LED arrays L1 to L
The common electrode on the bottom of 40 is bonded. A common electrode drive IC 42 for time-divisionally driving the LED arrays L1 to L40 one by one is provided on the second main surface 34 of the common electrode substrate 30, and connected to the common electrode wiring 36 via a wire bonding pad 44. . Reference numeral 46 denotes a backside bus for connecting the external connection terminal 48 and the common electrode driving IC 42.

【0022】共通電極駆動IC42は、裏面バス46と
共通電極駆動IC42とにワイヤボンディングする。共
通電極駆動IC42を、LEDアレイL1〜L40とは
反対側の第2の主面34に配置したのは、チップの高さ
やバンプのピッチやサイズ等の違いのため、フリップチ
ップ接続が困難になるのを避けるためである。第2の主
面34に配置した共通電極駆動IC42は、バンプ44
やバス46にフリップチップ接続しても良いが、フリッ
プチップ接続に用いるフラックス等が駆動IC42の配
線を侵すことを防止するため、ワイヤボンディングとし
た。50はピン穴で、共通電極配線36と同時に形成し
たマークを元に作成し、共通電極配線36に対して±5
μm程度の精度がある。
The common electrode drive IC 42 is wire-bonded to the backside bus 46 and the common electrode drive IC 42. The common electrode driving IC 42 is arranged on the second main surface 34 on the opposite side of the LED arrays L1 to L40, because it is difficult to perform flip chip connection because of differences in chip height, bump pitch, size and the like. This is to avoid The common electrode drive IC 42 arranged on the second main surface 34 has bumps 44
Although it may be flip-chip connected to the bus 46, wire bonding is used to prevent the flux used for the flip-chip connection from invading the wiring of the drive IC 42. Reference numeral 50 is a pin hole, which is created based on the mark formed at the same time as the common electrode wiring 36, and is ± 5 with respect to the common electrode wiring 36.
It has an accuracy of about μm.

【0023】図3に、フリップチップ接続後の状態を示
す。LEDアレイL1〜L40は2枚の基板2,30に
サンドイッチされ、図1に示した透孔8から光を取り出
す。フリップチップ接続の前に、個別電極駆動IC18
を裏面配線14や外部接続端子20にワイヤボンディン
グし、共通電極駆動IC42をワイヤボンディングパッ
ド44や裏面バス46にワイヤボンディングする。LE
DアレイL1〜L40には、発光体側に図示しない位置
決めマーカを設け、共通電極基板30の第1の主面32
に設けた図示しないマーカと照合しながら搭載し、導電
性接着剤40で結合する。ここでLEDアレイL1〜L
40の発光体側を見ながら搭載できるため、各発光体を
±10μm以下の誤差で搭載することができる。
FIG. 3 shows a state after flip chip connection. The LED arrays L1 to L40 are sandwiched between two substrates 2 and 30 and light is extracted from the through hole 8 shown in FIG. Before flip chip connection, individual electrode drive IC18
Is wire-bonded to the back wiring 14 and the external connection terminal 20, and the common electrode drive IC 42 is wire-bonded to the wire bonding pad 44 and the back bus 46. LE
In the D arrays L1 to L40, positioning markers (not shown) are provided on the light emitter side, and the first principal surface 32 of the common electrode substrate 30 is provided.
It is mounted while collating with a marker (not shown) provided in the above, and is bonded with a conductive adhesive 40. Here, the LED arrays L1 to L
Since it can be mounted while looking at the 40 light emitter side, each light emitter can be mounted with an error of ± 10 μm or less.

【0024】52,54はスペーサで、個別電極基板2
が傾いて取り付けられることを防止するためのものであ
る。基板2,30の中央部の1〜数箇所にスペーサ54
を、両端部にスペーサ52を設け、中央のスペーサ54
はLEDアレイL1〜L40の列の両側に設ける。また
56,56は位置決め用のピンで、ピン穴22とピン穴
50とに捜通し、基板2、30を位置決めする。ピン穴
22は個別電極配線10に対して±5μm程度の精度で
配置され、ピン穴50は共通電極配線36に対して±5
μm程度の精度で配置されているので、ピン穴22,5
0にピン56を通すと、2枚の基板2,30を±10μ
m以下の誤差で位置決めすることができる。このため、
LEDアレイL1〜L40の各電極を1バンプずつずら
してフリップチップ接続してしまう、等の不良が解消す
る。そしてこのように基板2,30を位置決めし、かつ
基板2のセット前にLEDアレイL1〜L40の電極パ
ターンを確認し、これにバンプ列12を位置合わせする
ように、個別電極基板2をセットする。またスペーサ5
2,54で基板2が傾くのを防止した状態で、フリップ
チップ接続する。このようにすれば、フリップチップ接
続時のフラックスや半田等による仮止めの力が弱くて
も、LEDアレイL1〜L40の各発光体を個別電極配
線10のバンプ列12に対して±10μm以下の搭載誤
差でフリップチップ接続することができる。また基板
2,30はピン56で固定されているので、フラックス
等の仮止めの力が弱くても、LEDアレイL1〜L40
の各電極がバンプからずれる恐れがない。なおピン5
6,56は、フリップチップ接続後に取り外しても良
い。
52 and 54 are spacers, which are the individual electrode substrates 2
It is intended to prevent the device from being tilted. Spacers 54 are provided at one to several places in the central portions of the substrates 2 and 30.
, Spacers 52 are provided at both ends, and a spacer 54 at the center is provided.
Are provided on both sides of the row of the LED arrays L1 to L40. Further, reference numerals 56 and 56 are positioning pins, which are positioned in the pin holes 22 and 50 to position the substrates 2 and 30. The pin hole 22 is arranged with an accuracy of about ± 5 μm with respect to the individual electrode wiring 10, and the pin hole 50 is ± 5 with respect to the common electrode wiring 36.
Since they are arranged with an accuracy of about μm, the pin holes 22, 5
Pass the pin 56 through 0 to move the two boards 2 and 30 to ± 10μ.
Positioning can be performed with an error of m or less. For this reason,
Defects such as shifting each electrode of the LED arrays L1 to L40 by one bump and performing flip-chip connection are eliminated. Then, the substrates 2 and 30 are positioned in this way, and the electrode patterns of the LED arrays L1 to L40 are confirmed before the substrate 2 is set, and the individual electrode substrate 2 is set so that the bump rows 12 are aligned with this. . Also spacer 5
Flip-chip connection is performed in a state in which the substrate 2 is prevented from tilting at 2, 54. By doing so, even if the force of temporary fixing by flux, solder or the like at the time of flip chip connection is weak, each light emitting body of the LED arrays L1 to L40 is within ± 10 μm with respect to the bump row 12 of the individual electrode wiring 10. Flip chip connection is possible due to mounting error. Since the substrates 2 and 30 are fixed by the pins 56, the LED arrays L1 to L40 can be used even if the temporary fixing force of flux or the like is weak.
There is no risk that each electrode of will shift from the bump. Pin 5
6,56 may be removed after flip-chip connection.

【0025】図4に、図3のA−A方向断面を示す。図
において60は透孔8の内壁に設けた反射防止部で、個
別電極基板2には1mm程度の厚さがあり、その一方で
透孔8には100μm程度の幅しかないため、透孔8の
内壁で発光体からの光が反射し、画像品位が低下するこ
とを防止するためのものである。反射防止部60は例え
ば艶消し状態で塗布した顔料等で構成し、LED光の1
回当たりの反射率が20%以下のものが好ましい。6
2,64はエポキシやシリコン樹脂等のモールド樹脂
で、駆動IC18,42を保護するために用いる。6
6,68は裏面配線14やワイヤボンディングパッド4
4へのワイヤ線である。
FIG. 4 shows a cross section taken along the line AA of FIG. In the figure, reference numeral 60 denotes an antireflection portion provided on the inner wall of the through hole 8. The individual electrode substrate 2 has a thickness of about 1 mm, while the through hole 8 has a width of only about 100 μm. This is to prevent the light from the light-emitting body from being reflected on the inner wall of the sheet and degrading the image quality. The antireflection portion 60 is composed of, for example, a pigment or the like applied in a matte state, and
It is preferable that the reflectance per time is 20% or less. 6
2 and 64 are mold resins such as epoxy and silicon resin, which are used to protect the drive ICs 18 and 42. 6
6, 68 are backside wiring 14 and wire bonding pads 4
4 is a wire line.

【0026】図4から明らかなように、スペーサ52,
54がないと、個別電極基板2がLEDアレイL1〜L
40に対して斜めに傾いて取り付けられ、LEDアレイ
L1〜L40を損傷したり、フリップチップ接続の不良
を生じたりすることがある。そこでスペーサ52,54
には、LEDアレイL1〜L40と厚さがほぼ等しいも
のを用い、その厚さはバンプ12や導電性接着剤40の
厚さ等も加味して、個別電極基板2が水平にセットする
ように定める。なおスペーサ52,54には例えばLE
Dアレイそのものを用いても良い。またスペーサ52,
54は、LEDヘッドの組立後も基板2,30を結合
し、外力で基板が傾いたり、LEDアレイL1〜L40
に無理な力が加わったりするのを防止する。
As is apparent from FIG. 4, the spacers 52,
Without 54, the individual electrode substrate 2 would have the LED arrays L1-L
The LED arrays L1 to L40 may be attached obliquely to the LED array 40, and the LED arrays L1 to L40 may be damaged or the flip chip connection may be defective. Therefore, the spacers 52, 54
The LED arrays L1 to L40 have a thickness substantially the same as that of the LED arrays L1 to L40. The thickness of the bumps 12 and the conductive adhesive 40 are taken into consideration so that the individual electrode substrate 2 is set horizontally. Establish. The spacers 52 and 54 are, for example, LE
The D array itself may be used. In addition, the spacer 52,
The reference numeral 54 indicates that the boards 2 and 30 are combined even after the LED head is assembled, and the boards are tilted by an external force, or the LED arrays L1 to L40.
To prevent excessive force from being applied to.

【0027】図5に、図3のB−B方向断面を示す。5
2は、基板2,30の両端に配置したスペーサで、その
幅はLEDアレイL1〜L40よりも大きくし、両端で
個別電極基板2が傾かないようにする。また56は前記
のピンで、基板2,30を両端で位置決めし、LEDア
レイL1〜L40の各電極がバンプ列12の正しいバン
プ位置に現れるようにする。
FIG. 5 shows a cross section taken along line BB of FIG. 5
Reference numeral 2 denotes spacers arranged at both ends of the substrates 2 and 30, and the width thereof is made larger than that of the LED arrays L1 to L40 so that the individual electrode substrate 2 is not inclined at both ends. Reference numeral 56 is the pin for positioning the substrates 2 and 30 at both ends so that each electrode of the LED arrays L1 to L40 appears at the correct bump position of the bump row 12.

【0028】図6に、熱風ヒータによるフリップチップ
接続を示す。フリップチップ接続にはリフロー炉を用い
ても良いが、半田バンプ12の融点は150℃程度で、
基板2,30の耐熱温度は100℃程度である。このた
めリフロー炉を用いると基板2,30を変形させる恐れ
があり、局所加熱が容易な熱風ヒータを用いる。
FIG. 6 shows flip-chip connection using a hot air heater. A reflow furnace may be used for flip chip connection, but the melting point of the solder bump 12 is about 150 ° C.
The heat resistant temperature of the substrates 2 and 30 is about 100 ° C. Therefore, if a reflow furnace is used, the substrates 2 and 30 may be deformed, and a hot air heater that is easy to locally heat is used.

【0029】図において、70は熱風ヒータの熱風ノズ
ルで、ここから図の白抜き矢印のように熱風を吹き付け
る。72は誘導板で、長いスリット状の透孔74を介し
て、熱風を透孔8へと導き入れ、そこからフリップチッ
プ接続部を局所的に加熱する。熱風ヒータによるフリッ
プチップ接続では、1〜3秒程度の加熱時間でフリップ
チップ接続を行うことができ、基板2,30等の過熱が
少ない。また誘導板72を用い、透孔74から集中的に
熱風を導き入れるようにすれば、それ以外の部分には熱
風が触れず、個別電極基板2を変形させる恐れがさらに
減少する。このようにしても個別電極基板2の第2の主
面6は僅かに加熱されるが、ここで裏面配線14とスル
ーホール16とが熱を逃がす役割をする。即ち第2の主
面6には裏面配線14があり、誘導板72から裏面配線
14に伝わった熱は、スルーホール16を介して第1の
主面4側へと逃げる。このため個別電極基板2の第2の
主面6が過熱される恐れはさらに減少する。
In the figure, reference numeral 70 denotes a hot air nozzle of a hot air heater, from which hot air is blown as indicated by an outlined arrow in the figure. A guide plate 72 guides hot air into the through holes 8 through the long slit-like through holes 74, and locally heats the flip chip connection portion from there. In the flip-chip connection using a hot air heater, the flip-chip connection can be performed in a heating time of about 1 to 3 seconds, and overheating of the substrates 2 and 30 is small. Further, if the guide plate 72 is used and the hot air is intensively introduced from the through holes 74, the hot air does not come into contact with other portions, and the risk of deforming the individual electrode substrate 2 is further reduced. Even in this case, the second main surface 6 of the individual electrode substrate 2 is slightly heated, but the back wiring 14 and the through hole 16 play a role of releasing heat. That is, the back surface wiring 14 is provided on the second main surface 6, and the heat transferred from the guide plate 72 to the back surface wiring 14 escapes to the first main surface 4 side through the through holes 16. Therefore, the risk that the second main surface 6 of the individual electrode substrate 2 is overheated is further reduced.

【0030】[0030]

【実施例2】実施例2〜実施例4に、最初の実施例の種
々の改良を示す。特に指摘した点以外は、最初の実施例
と同様である。図7,図8に、個別電極基板2を2枚の
基板2−1,2−2で構成した実施例を示す。LED光
を取り出すための透孔8の幅は100μm程度で、その
長さは20cm程度となる。幅が狭く長い透孔を加工す
るのは難しいので、基板2を透孔8を延長したラインで
分割した2枚の基板2−1,2−2で構成し、透孔8は
基板2−1,2−2のエッジを削って作成する。エッジ
の研削には例えばルーターを用いる。またこの実施例で
は個別電極駆動IC18,18を個別電極配線10と同
じ主面に配置し、それに伴ってIC18,18に接続し
た個別電極配線10−1を設け、IC18から個別電極
配線10−1,裏面配線14,各個別電極配線10の順
に接続する。
Example 2 Examples 2 to 4 show various improvements of the first example. Except for the points particularly pointed out, it is the same as the first embodiment. 7 and 8 show an embodiment in which the individual electrode substrate 2 is composed of two substrates 2-1 and 2-2. The width of the through hole 8 for extracting the LED light is about 100 μm, and the length thereof is about 20 cm. Since it is difficult to process a narrow and long through hole, the substrate 2 is composed of two substrates 2-1 and 2-2 divided by a line extending the through hole 8, and the through hole 8 is the substrate 2-1. , 2-2 by cutting the edge. For example, a router is used for edge grinding. Further, in this embodiment, the individual electrode driving ICs 18 and 18 are arranged on the same main surface as the individual electrode wirings 10, and accordingly, the individual electrode wirings 10-1 connected to the ICs 18 and 18 are provided, and from the IC 18 to the individual electrode wirings 10-1. , The rear surface wiring 14, and the individual electrode wirings 10 are connected in this order.

【0031】基板2−1,2−2は透孔8の両外側で接
着して貼り合わせ、IC18,18やLEDアレイL1
〜L40とのフリップチップ接続部や、スペーサ52,
54で支えられる。このため基板2−1,2−2が傾い
たりすることはない。
The substrates 2-1 and 2-2 are adhered and adhered to each other on both outer sides of the through hole 8 to form the ICs 18 and 18 and the LED array L1.
~ L40 flip chip connection, spacer 52,
Supported by 54. Therefore, the substrates 2-1 and 2-2 do not tilt.

【0032】[0032]

【実施例3】図9〜図11に、個別電極駆動IC18,
18を両端のスペーサ52,52に、共通電極駆動IC
42を中央部のスペーサ54に兼用した例を示す。また
この実施例ではフリップチップ接続に、熱硬化樹脂80
の収縮力を利用する。個別電極基板には、2枚の基板2
−1,2−2を用いた。
[Third Embodiment] FIGS. 9 to 11 show individual electrode driving ICs 18,
18 to the spacers 52 at both ends, and a common electrode drive IC
An example in which 42 is also used as the spacer 54 in the central portion is shown. In this embodiment, the thermosetting resin 80 is used for flip chip connection.
The contraction force of is used. There are two substrates 2 for the individual electrode substrate.
-1, 2-2 were used.

【0033】IC18,42を、LEDアレイL1〜L
40とほぼ同じ厚さのウェハー(例えば400μm厚)
から製造してLEDアレイL1〜L40と高さを揃え、
電極ピッチをLEDアレイL1〜L40とほぼ等しくす
る。絶縁膜82を設け、IC18,42の底面を介して
の短絡を防止する。共通電極駆動IC42をLEDアレ
イL1〜L40と同じ主面32に配置したことに伴い、
共通電極配線を図10の共通電極配線84のように変更
する。またLEDアレイL1〜L40の列の両外側に、
熱硬化樹脂80を充填する。
The ICs 18 and 42 are connected to the LED arrays L1 to L
Wafer with almost the same thickness as 40 (for example, 400 μm thick)
Manufactured in the same height as the LED arrays L1 to L40,
The electrode pitch is made substantially equal to that of the LED arrays L1 to L40. An insulating film 82 is provided to prevent a short circuit via the bottom surface of the IC 18, 42. Since the common electrode drive IC 42 is arranged on the same main surface 32 as the LED arrays L1 to L40,
The common electrode wiring is changed to the common electrode wiring 84 in FIG. Also, on both outer sides of the row of LED arrays L1 to L40,
The thermosetting resin 80 is filled.

【0034】このようにすると、スペーサ52,54を
別に作る必要がなくなり、しかもIC18,42は基板
2,30の間に収容されるので、IC18,42の保護
が容易になる。フリップチップ接続では、リフロー炉や
熱風加熱などの前に樹脂80の接着力で仮止めができ、
しかもこの段階でLEDアレイL1〜L40が動作す
る。これは樹脂の接着力で、フリップチップ接続部のコ
ンタクトが得られるからである。すると、1) 仮止めに
より接続部がずれる恐れがなく、2) 最終的な接続前に
各LEDを動作させ、画像装置の電気試験ができる。こ
のため接続不良、LEDアレイL1〜L40の不良、配
線10,36等の異常、IC18,42の不良をチェッ
クできる。これらのチェック後に、例えば図11のよう
にして、熱風加熱等でフリップチップ接続を完成する。
熱風加熱は、誘導板72に設けた透孔74から熱風を吹
き込み、フリップチップ接続部と樹脂80のみを局所加
熱するのが好ましい。
In this way, the spacers 52 and 54 are
There is no need to make it separately, and IC18 and 42 are substrates
Since it is housed between 2 and 30, IC18 and 42 protection
Will be easier. For flip chip connection, reflow furnace or
The adhesive force of the resin 80 can be used for temporary fixing before heating with hot air.
Moreover, the LED arrays L1 to L40 operate at this stage.
It This is the adhesive strength of the resin, and the flip-chip joint
This is because the contact is obtained. Then 1)  For temporary fixing
2) There is no risk of the connection part shifting  Before the final connection
Each LED can be operated to perform an electrical test of the imaging device. This
Connection failure, LED array L1 to L40 failure,
Check for abnormalities in lines 10 and 36, and defects in ICs 18 and 42.
You can After these checks, for example, as shown in Figure 11.
Then, the flip chip connection is completed by hot air heating or the like.
The hot air is heated by blowing hot air through the through holes 74 provided in the guide plate 72.
Implant, apply only the flip chip connection and resin 80 locally
It is preferable to heat.

【0035】樹脂80を硬化させると、樹脂80の収縮
力で基板2,30が引合い、この力でフリップチップ接
続部のコンタクトが保たれる。このためフリップチップ
接続には半田バンプを用いる必要がなくなり、例えば金
バンプと金メッキ配線や銅配線の組み合せなどでも良
い。半田バンプを用いる場合には、半田の溶融によるコ
ンタクトに、樹脂80の収縮力によるコンタクトが加わ
り、単なる半田接続の場合に比べより確実なコンタクト
が得られる。硬化後の樹脂80は基板2,30を固定
し、曲げモーメント等がフリップチップ接続部に加わり
接続を破壊することを防止する。
When the resin 80 is hardened, the contraction force of the resin 80 attracts the substrates 2 and 30, and this force maintains the contact at the flip chip connection portion. Therefore, it is not necessary to use solder bumps for flip chip connection, and for example, a combination of gold bumps and gold-plated wiring or copper wiring may be used. In the case of using the solder bump, the contact due to the contraction force of the resin 80 is added to the contact due to the melting of the solder, so that a more reliable contact can be obtained as compared with the case of simple solder connection. The cured resin 80 fixes the substrates 2 and 30 and prevents a bending moment or the like from being applied to the flip chip connection portion to break the connection.

【0036】[0036]

【実施例4】図12〜図14に、スタッドバンプ86を
用いた例を示す。スタッドバンプ86は、共通電極基板
30に配列後のLEDアレイL1〜L40の電極パッド
に、金線等をボールボンディングし、ボールの上部を切
断したものである。スタッドバンプ86の特徴は、1)
背の高い、例えば高さ50μm以上のバンプを容易に得
られることと、2) アレイL1〜L40の配列後に形成
できるので、全てのバンプ86を直線上に配置できるこ
とにある。バンプ86の背が高いことは、個別電極基板
2の第1の主面4の平坦度が不足しても、バンプ86の
変形で補い、LEDアレイL1〜L40の発光体の高さ
を揃えることができることを意味する。
Fourth Embodiment A stud bump 86 is shown in FIGS.
The example used is shown below. The stud bump 86 is a common electrode substrate.
The electrode pads of the LED arrays L1 to L40 arranged in 30
Then, ball-bond a gold wire, etc., and cut the top of the ball.
I refused. The characteristics of the stud bump 86 are 1)  
Easily obtain tall bumps, for example 50 μm or more in height
And 2)  Formed after arraying arrays L1 to L40
Since it is possible, it is possible to arrange all the bumps 86 on a straight line.
And in. The fact that the bumps 86 are tall means that the individual electrode substrate
2 even if the flatness of the first main surface 4 is insufficient,
The height of the light emitting bodies of the LED arrays L1 to L40, which is compensated for by the deformation
Means that they can be aligned.

【0037】LEDアレイL1〜L40の配列後にスタ
ッドバンプ86を形成できることは、例えば図14のよ
うにLEDアレイL2の位置がずれる、あるいはアレイ
のばらつきのためにバンプ形成用のパッドの位置がずれ
た場合にも、スタッドバンプ86の位置が直線上に揃う
ことを意味する。このため全てのバンプ86が図14の
ように直線l1 ,l2 上に揃い、フリップチップ接続の位
置合わせが極めて容易になる。またスタッドバンプ86
を、アレイL1〜L40の配列後に形成することは、ウ
ェハー段階でバンプを形成する場合に比べ、1) ウェハ
ーをバンプ形成時の衝撃で損傷することがなく、収率が
向上し、2) 形成したバンプのために以降のウェハーの
扱いが難しくなることがないという特徴がある。
After arraying the LED arrays L1 to L40,
The fact that the dead bump 86 can be formed is, for example, as shown in FIG.
LED array L2 is out of position, or the array
The position of the pad for bump formation is misaligned due to
Even when the stud bumps 86 are aligned, the positions of the stud bumps 86 are aligned on a straight line.
Means that. Therefore, all the bumps 86 of FIG.
Straight line l1 , L2 Flip chip connection
The alignment becomes extremely easy. In addition, the stud bump 86
Is formed after the arrays L1 to L40 are arranged.
1) compared to the case where bumps are formed at the wafer stage  Wafer
Is not damaged by the impact of bump formation, and the yield is
Improved, 2)  Because of the formed bumps,
It has the feature that it is not difficult to handle.

【0038】[0038]

【発明の効果】請求項1の発明では、以下の効果が得ら
れる。 1) 受発光アレイのパターンを見ながらフリップチップ
接続することを可能にし、アレイの搭載精度を高める。 2) フリップチップ接続時のアレイの仮止め精度を高
め、アレイの搭載精度を高める。 3) フリップチップ接続時に、全ての受発光アレイを均
一に加圧できるようにし、アレイの損傷を防止する。 4) 安価な硬質プリント基板等の使用を可能にし、かつ
基板に両面配線を施し、配線密度を低下させる。 5) 2枚の基板が傾くのを防止し、2枚の基板を平行に
保つ。
According to the invention of claim 1, the following effects can be obtained.
Be done. 1)  Flip chip while watching the pattern of the light emitting and receiving array
It enables connection and enhances mounting accuracy of the array. 2)  High accuracy of temporary fixing of array when flip chip connection
Therefore, the mounting accuracy of the array is improved. 3)  All the light emitting and receiving arrays are leveled when flip chip connection is performed.
Allows a single pressurization to prevent damage to the array. Four)  Enables the use of inexpensive hard printed circuit boards, and
Apply double-sided wiring to the board to reduce wiring density. Five)  Prevent the two boards from tilting and keep the two boards parallel.
keep.

【0039】請求項2の発明ではさらに、6) 個別電極
配線を受発光アレイに対し正確に位置決めできる。また
請求項3の発明ではさらに、7) 個別配線基板に設けた
透孔での光の反射を防止し、画像品位を向上させること
ができる。請求項4の発明ではさらに、8) 共通電極駆
動ICや個別電極駆動ICの高さが受発光アレイよりも
高く、バンプのサイズやバンプのピッチが受発光アレイ
と異なっても、フリップチップ接続の障害とならないよ
うにすることができる。
According to the invention of claim 2, further 6)  Individual electrode
The wiring can be accurately positioned with respect to the light emitting / receiving array. Also
In the invention of claim 3, further 7)  Provided on an individual wiring board
Preventing the reflection of light at the through holes and improving the image quality.
You can In the invention of claim 4, further 8)  Common electrode drive
The height of the dynamic IC and the individual electrode drive IC is higher than that of the light emitting / receiving array.
High light emitting / receiving array with bump size and bump pitch
Does not interfere with flip-chip connection
You can

【0040】請求項5の発明ではさらに、9) 個別電極
基板への透孔の形成を容易にし、しかも個別電極基板が
傾かないようにすることができる。この場合、2枚に分
割した個別電極基板は、受発光アレイやスペーサ等で支
えられて傾かない。そして基板を2枚に分割したので、
細長い透孔を加工するのが容易になる。請求項6の発明
ではさらに、10) フリップチップ接続をさらに容易に
し、受発光体を試験的に動作させて接続が正しいかどう
かを確認した後に、最終的に接続することができる。こ
の場合、接続部は樹脂の力で仮止めされ、最終結合前に
受発光アレイを動作させ、検査することができる。そし
て検査後に樹脂を硬化させて最終接続することができ
る。また樹脂の収縮力で接続部の接触が保たれると共
に、樹脂で個別電極基板と両面配線基板とを固定し、フ
リップチップ接続部に無理が加わるのを防止できる。請
求項7の発明ではさらに、11) 共通電極駆動ICや個
別電極駆動ICを受発光アレイと同時にフリップチップ
接続し、しかもスペーサをこれらのもので兼用できる。
請求項8の発明ではさらに、12) バンプを正確に配列
してフリップチップ接続を容易にし、かつ個別電極基板
の平坦度が低い場合にも接続を容易にすることにある。
この場合スタッドバンプは、受発光アレイを配列した後
に形成でき、共通電極基板上に正確にバンプを配列でき
る。またスタッドバンプはアスペクト比の高い背の高い
バンプを容易に形成できるので、個別電極配線の平坦度
の不足をバンプの変形で補い、平坦度の低い個別電極基
板でも、アレイ表面の平坦度を低下させずに接続するこ
とができる。
According to the invention of claim 5, 9)  Individual electrode
It facilitates the formation of through holes in the substrate,
You can prevent it from leaning. In this case, 2 minutes
The divided individual electrode substrate is supported by a light emitting and receiving array, spacers, etc.
It does not get tilted. And since the board was divided into two,
It becomes easy to process the elongated through holes. Invention of Claim 6
Then, 10)  Flip-chip connection made easier
Then, test the light-emitter and receiver to see if the connection is correct.
After confirming that, you can finally connect. This
In the case of, the connection part is temporarily fixed by the force of the resin, and before the final connection
The light emitting and receiving array can be operated and tested. That
After the inspection, the resin can be cured and the final connection can be made.
It Also, if the contact of the connection part is maintained by the shrinkage force of the resin,
Then, fix the individual electrode board and the double-sided wiring board with resin, and
It is possible to prevent excessive force from being applied to the lip tip connection part. Contract
In the invention of claim 7, further 11)  Common electrode drive IC and individual
Separate electrode drive IC and flip chip at the same time as the light emitting and receiving array
These can be connected and the spacer can also be used as these.
In the invention of claim 8, further 12)  Accurately arrange bumps
To facilitate flip chip connection and individual electrode substrate
The purpose is to facilitate the connection even when the flatness is low.
In this case, the stud bumps will be
And bumps can be accurately arranged on the common electrode substrate.
It Also, the stud bumps are tall with a high aspect ratio.
Since bumps can be easily formed, flatness of individual electrode wiring
Of bumps is compensated by bump deformation, and individual electrode substrate with low flatness
Even a plate can be connected without degrading the flatness of the array surface.
You can

【図面の簡単な説明】[Brief description of drawings]

【図1】 実施例の画像装置の個別配線基板の表裏の
状態を示す図
FIG. 1 is a diagram showing the front and back states of individual wiring boards of an image device according to an embodiment.

【図2】 実施例の画像装置の共通電極基板の表裏の
状態を示す図
FIG. 2 is a diagram showing a state of front and back surfaces of a common electrode substrate of the image device of the embodiment.

【図3】 実施例の画像装置の要部側面図FIG. 3 is a side view of a main part of the image device according to the embodiment.

【図4】 図3のA−A方向拡大断面図4 is an enlarged cross-sectional view taken along the line AA of FIG.

【図5】 図3のB−B方向拡大断面図5 is an enlarged cross-sectional view taken along line BB of FIG.

【図6】 実施例でのフリップチップ接続工程を示す
断面図
FIG. 6 is a cross-sectional view showing a flip-chip connection process in an example.

【図7】 第2の実施例での個別配線基板の平面図FIG. 7 is a plan view of an individual wiring board according to a second embodiment.

【図8】 第2の実施例の要部断面図FIG. 8 is a sectional view of an essential part of the second embodiment.

【図9】 第3の実施例の要部断面図FIG. 9 is a cross-sectional view of the essential parts of the third embodiment.

【図10】 第3の実施例の共通電極基板の平面図FIG. 10 is a plan view of a common electrode substrate according to a third embodiment.

【図11】 第3の実施例でのフリップチップ接続工程
を示す断面図
FIG. 11 is a cross-sectional view showing a flip chip connection process in the third embodiment.

【図12】 第4の実施例の要部平面図FIG. 12 is a plan view of an essential part of the fourth embodiment.

【図13】 第4の実施例でのLEDアレイの側面図FIG. 13 is a side view of an LED array according to a fourth embodiment.

【図14】 第4の実施例でのバンプの配列を示す平面
FIG. 14 is a plan view showing the arrangement of bumps in the fourth embodiment.

【符号の説明】[Explanation of symbols]

個別電極基板 2−1, 2−2 個別電極基板 4 第1の主面 6 第2の主面 8 透孔 10, 10−1 個別電極配線 12 バンプ列 14 裏面配線 16 スルーホール列 18 個別電極駆動IC 20 外部接続端子 22 ピン穴 30 共通電極基板 32 第1の主面 34 第2の主面 36 共通電極配線 38 スルーホール 40 導電性接着剤 42 共通電極駆動IC 44 ワイヤボンディングパッド 46 裏面バス 48 外部接続端子 50 ピン穴 52,54 スペーサ 56 ピン 60 反射防止部 62,64 モールド樹脂 66,68 ワイヤ線 70 熱風ノズル 72 誘導板 74 透孔 80 熱硬化樹脂 82 絶縁膜 84 共通電極配線 86 スタッドバンプ Two Individual electrode substrate 2-1, 2-2 Individual electrode substrate 4 First major surface 6 Second main surface 8 Through hole 10, 10-1 Individual electrode wiring 12 Bump row 14 Backside wiring 16 Through hole row 18 Individual electrode drive IC 20 External connection terminal 22 Pin hole 30 Common electrode substrate 32 First main surface 34 Second main surface 36 Common electrode wiring 38 Through hole 40 Conductive adhesive 42 Common electrode drive IC 44 Wire bonding pad 46 Back bus 48 External connection terminal 50 Pin hole 52, 54 Spacer 56 Pin 60 Antireflection part 62,64 Mold resin 66,68 Wire wire 70 Hot air nozzle 72 Guide plate 74 Through hole 80 Thermosetting resin 82 Insulation film 84 Common electrode wiring 86 Stud bump

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 第1の主面に共通電極配線を設けた共通
電極基板と、 第1の主面に個別電極配線を設け、第2の主面に裏面配
線を設け、これらの両配線をスルーホールで接続した個
別電極基板とを設け、 受発光アレイの底面の共通電極を前記共通電極配線に結
合し、アレイ表面の個別の受発光体に接続した電極を前
記個別電極配線にフリップチップ接続して、前記受発光
アレイを共通電極基板と個別電極基板とでサンドイッチ
し、 さらに個別電極基板には、前記アレイの受発光体に対応
した位置に透孔を設け、 かつ共通電極基板と個別電極基板との間に、前記受発光
アレイとほぼ等しい高さのスペーサを配設したことを特
徴とする、画像装置。
1. A common electrode substrate having a common electrode wiring on a first main surface, an individual electrode wiring on a first main surface, a back surface wiring on a second main surface, and both wirings. An individual electrode substrate connected by a through hole is provided, the common electrode on the bottom surface of the light receiving and emitting array is connected to the common electrode wiring, and the electrode connected to the individual light receiving and emitting body on the array surface is flip-chip connected to the individual electrode wiring. Then, the light emitting / receiving array is sandwiched between a common electrode substrate and an individual electrode substrate, and the individual electrode substrate is provided with a through hole at a position corresponding to the light emitting / receiving body of the array. An image device in which a spacer having a height substantially equal to that of the light emitting and receiving array is arranged between the substrate and the substrate.
【請求項2】 前記共通電極基板と個別電極基板とを、
ピンで位置決めしたことを特徴とする、請求項1の画像
装置。
2. The common electrode substrate and the individual electrode substrate,
The imaging device according to claim 1, wherein the imaging device is positioned by a pin.
【請求項3】 前記透孔の内面に反射防止部を設けたこ
とを特徴とする、請求項1の画像装置。
3. The image device according to claim 1, wherein an antireflection portion is provided on the inner surface of the through hole.
【請求項4】 前記共通電極基板の第2の主面に共通電
極駆動ICを設け、 前記個別電極駆動基板の第2の主面に個別電極駆動IC
を設けたことを特徴とする、請求項1の画像装置。
4. A common electrode driving IC is provided on the second main surface of the common electrode substrate, and an individual electrode driving IC is provided on the second main surface of the individual electrode driving substrate.
The image apparatus according to claim 1, further comprising:
【請求項5】 前記個別電極基板を、前記透孔を延長し
た線に沿って切断した2枚の基板で構成したことを特徴
とする、請求項1の画像装置。
5. The image device according to claim 1, wherein the individual electrode substrate is composed of two substrates cut along a line extending from the through hole.
【請求項6】 前記個別電極基板と共通電極基板との間
に樹脂を充填し、樹脂の収縮力で前記フリップチップ接
続を行うようにしたことを特徴とする、請求項1の画像
装置。
6. The image device according to claim 1, wherein a resin is filled between the individual electrode substrate and the common electrode substrate, and the flip-chip connection is performed by a contracting force of the resin.
【請求項7】 前記共通電極駆動ICと個別電極駆動I
Cを、前記受発光アレイとほぼ等しい厚さとし、かつ共
通電極駆動ICを共通電極配線に、個別電極駆動ICを
個別電極配線にそれぞれフリップチップ接続したことを
特徴とする、請求項1の画像装置。
7. The common electrode driving IC and the individual electrode driving I
2. The image device according to claim 1, wherein C has a thickness substantially equal to that of the light emitting / receiving array, and the common electrode driving IC is flip-chip connected to the common electrode wiring and the individual electrode driving IC is connected to the individual electrode wiring, respectively. .
【請求項8】 前記フリップチップ接続に用いるバンプ
を、受発光アレイ表面に設けたスタッドバンプで構成し
たことを特徴とする、請求項1の画像装置。
8. The image device according to claim 1, wherein the bump used for the flip-chip connection is constituted by a stud bump provided on the surface of the light receiving and emitting array.
JP5265615A 1993-08-31 1993-09-28 Imaging device Expired - Fee Related JP2889800B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5265615A JP2889800B2 (en) 1993-08-31 1993-09-28 Imaging device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP24052493 1993-08-31
JP5-240524 1993-08-31
JP5265615A JP2889800B2 (en) 1993-08-31 1993-09-28 Imaging device

Publications (2)

Publication Number Publication Date
JPH07123202A true JPH07123202A (en) 1995-05-12
JP2889800B2 JP2889800B2 (en) 1999-05-10

Family

ID=26534760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5265615A Expired - Fee Related JP2889800B2 (en) 1993-08-31 1993-09-28 Imaging device

Country Status (1)

Country Link
JP (1) JP2889800B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031853A (en) * 2001-07-11 2003-01-31 Sony Corp Image display unit and its manufacturing method
JP2005017684A (en) * 2003-06-26 2005-01-20 Nec Corp Optical module and method for manufacturing the same
JP2019012775A (en) * 2017-06-30 2019-01-24 日亜化学工業株式会社 Manufacturing method of light-emitting device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031853A (en) * 2001-07-11 2003-01-31 Sony Corp Image display unit and its manufacturing method
JP2005017684A (en) * 2003-06-26 2005-01-20 Nec Corp Optical module and method for manufacturing the same
JP2019012775A (en) * 2017-06-30 2019-01-24 日亜化学工業株式会社 Manufacturing method of light-emitting device
US10461215B2 (en) 2017-06-30 2019-10-29 Nichia Corporation Method of manufacturing light-emitting device
US10651336B2 (en) 2017-06-30 2020-05-12 Nichia Corporation Light-emitting device

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