JPH07114182B2 - Method for producing dry plate in charged particle beam exposure - Google Patents

Method for producing dry plate in charged particle beam exposure

Info

Publication number
JPH07114182B2
JPH07114182B2 JP62055764A JP5576487A JPH07114182B2 JP H07114182 B2 JPH07114182 B2 JP H07114182B2 JP 62055764 A JP62055764 A JP 62055764A JP 5576487 A JP5576487 A JP 5576487A JP H07114182 B2 JPH07114182 B2 JP H07114182B2
Authority
JP
Japan
Prior art keywords
dry plate
layer
charged particle
resin film
particle beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62055764A
Other languages
Japanese (ja)
Other versions
JPS63221617A (en
Inventor
勝之 有井
厚嗣 滝沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62055764A priority Critical patent/JPH07114182B2/en
Publication of JPS63221617A publication Critical patent/JPS63221617A/en
Publication of JPH07114182B2 publication Critical patent/JPH07114182B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Electron Beam Exposure (AREA)

Description

【発明の詳細な説明】 〔概要〕 乾板の、この層が形成された領域からこの層が形成され
ない領域へと延在するように少なくとも単層の樹脂膜を
塗布形成する工程と、次いで、この樹脂膜上であって、
この層と同一平面内に重なる領域上からこの層が形成さ
れない領域上まで延在するように、水溶性の導電層を形
成する工程と、次いで、この導電層および前記樹脂膜を
突き抜けてこの層に導通ピンを電気的に接触させる工程
と、次いで、この樹脂膜に荷電粒子線を照射して、この
樹脂膜が蓄積した電荷を、この導通ピンを通して放電す
る工程と、次いで、この乾板を水洗し、この水溶性の導
電層を除去する工程とを有する荷電粒子線露光における
乾板の製造方法。
DETAILED DESCRIPTION OF THE INVENTION [Outline] A step of coating and forming at least a single-layer resin film on a dry plate so as to extend from a region where this layer is formed to a region where this layer is not formed, and then this On the resin film,
A step of forming a water-soluble conductive layer so as to extend from an area overlapping with the layer in the same plane to an area where the layer is not formed, and then, passing through the conductive layer and the resin film to form the layer Electrically contacting the conductive pin with the conductive pin, then irradiating the resin film with a charged particle beam to discharge the electric charge accumulated in the resin film through the conductive pin, and then washing the dry plate with water. And a step of removing the water-soluble conductive layer, the method for producing a dry plate in charged particle beam exposure.

〔産業上の利用分野〕[Industrial application field]

本発明は、乾板の製造に係り、特に荷電粒子線露光にお
ける乾板の製造方法の改良に関するものである。
The present invention relates to a dry plate manufacturing method, and more particularly to improvement of a dry plate manufacturing method in charged particle beam exposure.

半導体装置の製造に用いる乾板の製造工程において、荷
電粒子線露光により金属層のパターンを形成する場合
に、乾板の周囲の金属層が存在しない部分に荷電粒子線
が照射されると、この部分でチャージアップを起こすた
めに荷電粒子線の照射方向がずれて、パターンずれが生
じる。
In the process of manufacturing a dry plate used for manufacturing a semiconductor device, when a pattern of a metal layer is formed by charged particle beam exposure, if a portion around the dry plate where the metal layer does not exist is exposed to the charged particle beam, this part is exposed. Due to the charge-up, the irradiation direction of the charged particle beam is deviated, and the pattern is deviated.

以上のような状況からチャージアップを起こさずに荷電
粒子線の照射が可能な荷電粒子線露光における乾板の製
造方法が要望されている。
Under the circumstances as described above, there is a demand for a method of manufacturing a dry plate in charged particle beam exposure, which is capable of irradiating a charged particle beam without causing charge-up.

〔従来の技術〕[Conventional technology]

従来の電子ビーム露光における乾板の製造方法は第3図
に示すように、電子ビーム露光される乾板1の表面にレ
ジスト2を塗布し、乾板1を載置するホルダ4に設けた
導通ピン5をクロム層1bに接触させて電荷をホルダ4に
逃がし、チャージアップが起こらないようにしている。
As shown in FIG. 3, the conventional method for manufacturing a dry plate in electron beam exposure is to apply a resist 2 to the surface of the dry plate 1 to be subjected to electron beam exposure, and attach a conductive pin 5 to a holder 4 on which the dry plate 1 is placed. The charge is released to the holder 4 by contacting the chrome layer 1b so that charge-up does not occur.

第4図により従来の製造方法を工程順に説明する。The conventional manufacturing method will be described in order of steps with reference to FIG.

先ず第4図(a)に示すように乾板1のクロム層1bを設
けた面にレジスト2を塗布する。
First, as shown in FIG. 4 (a), a resist 2 is applied to the surface of the dry plate 1 on which the chrome layer 1b is provided.

次に第4図(b)に示すように乾板1をホルダ4に取り
付け、レジスト2を破って導通ピン5をクロム層1bに接
触させてホルダ4に固定する。
Next, as shown in FIG. 4 (b), the dry plate 1 is attached to the holder 4, the resist 2 is broken, and the conductive pin 5 is brought into contact with the chrome layer 1b and fixed to the holder 4.

この状態でレジスト2の電子ビーム露光を行い、乾板1
をホルダ4から外してレジスト2の現像、クロム層1bの
エッチングを行ってクロム層1bのパターンを形成する。
In this state, the resist 2 is exposed to an electron beam, and the dry plate 1
Is removed from the holder 4 and the resist 2 is developed and the chromium layer 1b is etched to form a pattern of the chromium layer 1b.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

以上説明の従来の電子ビーム露光で問題となるのは、乾
板1のクロム層1bがスパッタされていない部分に塗布さ
れたレジスト2の表面に電子ビーム露光時にやむをえず
電子ビームが露光されると、チャージアップを起こすた
めに電子ビームの照射方向がずれて、パターンズレが生
じることである。
The problem with the conventional electron beam exposure described above is that if the surface of the resist 2 applied to the portion of the dry plate 1 where the chromium layer 1b is not sputtered is unavoidably exposed to the electron beam during electron beam exposure, This is because the electron beam irradiation direction shifts due to charge-up, resulting in a pattern shift.

本発明は以上のような状況から簡単且つ安価に実施可能
な電子ビーム露光における乾板の製造方法の提供を目的
としたものである。
In view of the above situation, the present invention has an object to provide a method for manufacturing a dry plate in electron beam exposure which can be easily and inexpensively implemented.

〔問題点を解決するための手段〕[Means for solving problems]

上記問題点は、荷電粒子線露光による、周辺部には金属
層が形成されていない乾板の製造工程において、前記乾
板の、該金属層が形成された領域から該金属層が形成さ
れない領域へと延在するように少なくとも単層の樹脂膜
を塗布形成する工程と、次いで、該樹脂膜上であって、
該金属層の周辺領域上から該金属層が形成されない領域
上まで延在するように、水溶性の導電層を形成する工程
と、次いで、該導電層および前記樹脂膜を突き抜けて該
金属層に導通ピンを電気的に接触させる工程と、次い
で、該樹脂膜に荷電粒子線を照射して、該樹脂膜が蓄積
した電荷を、該導通ピンを通して放電する工程と、次い
で、該乾板を水洗し、該水溶性の導電層を除去する工程
と、を有することを特徴とする荷電粒子線露光における
乾板の製造方法によって解決される。
The above-mentioned problem is that, in the process of manufacturing a dry plate in which a metal layer is not formed in the peripheral portion by charged particle beam exposure, from the region of the dry plate where the metal layer is formed to the region where the metal layer is not formed. A step of coating and forming at least a single-layer resin film so as to extend, and then on the resin film,
A step of forming a water-soluble conductive layer so as to extend from a peripheral region of the metal layer to a region where the metal layer is not formed, and then through the conductive layer and the resin film to form the metal layer A step of electrically contacting the conductive pin, a step of irradiating the resin film with a charged particle beam to discharge the electric charge accumulated in the resin film through the conductive pin, and then a step of washing the dry plate with water. And a step of removing the water-soluble conductive layer, which is solved by a method for manufacturing a dry plate in charged particle beam exposure.

〔作用〕[Action]

即ち本発明においては、乾板の金属層が形成されていな
い部分に塗布された樹脂膜の表面に導電層を塗布してい
るから、荷電粒子線が金属層の上の樹脂膜からはずれて
照射されることがあっても、導電層に照射されるため、
導通ピンによって導通ピンとホルダが接続されてホルダ
に電荷を逃がすことができるので、チャージアップを起
こすことがなくなる。
That is, in the present invention, since the conductive layer is applied to the surface of the resin film applied to the portion of the dry plate where the metal layer is not formed, the charged particle beam is irradiated while deviating from the resin film on the metal layer. In some cases, the conductive layer is irradiated,
Since the conduction pin and the holder are connected by the conduction pin and the electric charge can be released to the holder, charge-up does not occur.

〔実施例〕〔Example〕

以下第1図、第2図について本発明の一実施例を説明す
る。
An embodiment of the present invention will be described below with reference to FIGS.

第1図に示すように本実施例では乾板1に塗布されたレ
ジスト2の表面の周辺部に、ポリビニールアルコール
(PVA)とクロムの微粉末とを混合した導電材3が塗布
されており、乾板1を載置したホルダ4には乾板1のク
ロム層1bに照射された電子ビームの電荷を逃がすための
導通ピン5が設けられ、クロム層1bと接触している。
As shown in FIG. 1, in the present embodiment, the conductive material 3 in which polyvinyl alcohol (PVA) and chromium fine powder are mixed is applied to the peripheral portion of the surface of the resist 2 applied to the dry plate 1, The holder 4 on which the dry plate 1 is placed is provided with a conduction pin 5 for releasing the electric charge of the electron beam applied to the chrome layer 1b of the dry plate 1, and is in contact with the chrome layer 1b.

万一、電子ビームがクロム層1bからずれて照射された場
合でも、レジスト2の表面の周辺部に導電材3が塗布さ
れているので、導電材3の電荷は導電材3に接触してい
る導通ピン5を通じてホルダ4に逃がされる。
Even if the electron beam is deviated from the chromium layer 1b, the conductive material 3 is applied to the peripheral portion of the surface of the resist 2, so that the charge of the conductive material 3 is in contact with the conductive material 3. It is released to the holder 4 through the conduction pin 5.

第2図により本発明による一実施例を工程順に説明す
る。
An embodiment according to the present invention will be described in order of steps with reference to FIG.

先ず第2図(a)に示すように乾板1のクロム層1bを設
けた面の全面にレジスト2を塗布する。
First, as shown in FIG. 2A, a resist 2 is applied to the entire surface of the dry plate 1 on which the chromium layer 1b is provided.

次に第2図(b)に示すようにレジスト2の表面の周辺
部に水溶性の導電材3を図示するようにクロム層1bの周
辺部と重複させて輪状に塗布する。
Next, as shown in FIG. 2B, a water-soluble conductive material 3 is applied in a ring shape on the peripheral portion of the surface of the resist 2 so as to overlap the peripheral portion of the chromium layer 1b as shown in the drawing.

次いで第2図(c)に示すように乾板1をホルダ4に取
り付け、導電材3及びレジスト2を破って導通ピン5を
クロム層1bに接触させてホルダ4に固定する。
Next, as shown in FIG. 2C, the dry plate 1 is attached to the holder 4, the conductive material 3 and the resist 2 are broken, and the conductive pin 5 is brought into contact with the chrome layer 1b and fixed to the holder 4.

この状態でレジスト2の電子ビーム露光を行うと、どの
位置に電子ビームが露光されても電荷は必ず導通ピン5
によりホルダ4に逃がすことが可能である。
If the resist 2 is exposed to an electron beam in this state, the electric charge is surely applied to the conduction pin 5 no matter where the electron beam is exposed.
Can be released to the holder 4.

この後、乾板1をホルダ4から外して水洗すると、PVA
よりなる導電材3は水溶性のために簡単に除去できる。
After that, remove the dry plate 1 from the holder 4 and wash it with water.
Since the conductive material 3 made of water is water-soluble, it can be easily removed.

次いでレジスト2の現像、クロム層1bのエッチングを行
ってクロム層1bのパターンを形成する。
Next, the resist 2 is developed and the chromium layer 1b is etched to form a pattern of the chromium layer 1b.

このように電子ビームがクロム層1bの周囲からずれて照
射されることがあっても、導通ピン5により必ず電荷を
ホルダ4に逃がすことができるので、乾板1にチャージ
アップは起こらず従ってパターンズレが生じることがな
くなる。
Even if the electron beam is radiated from the periphery of the chrome layer 1b in this way, the electric charge can always be released to the holder 4 by the conduction pin 5, so that the dry plate 1 is not charged up and therefore the pattern shift is caused. Will not occur.

〔発明の効果〕〔The invention's effect〕

以上説明したように本発明によれば極めて簡単な導電材
の塗布により、電子ビーム露光によるチャージアップが
防止できるから、パターンズレが生じないので精度の高
い乾板を製造できる利点があり、著しい経済的及び、信
頼性向上の効果が期待でき工業的には極めて有用なもの
である。
As described above, according to the present invention, it is possible to prevent charge-up due to electron beam exposure by applying a very simple conductive material, so that there is an advantage that it is possible to manufacture a dry plate with high accuracy because no pattern deviation occurs, which is extremely economical. Moreover, the effect of improving reliability can be expected, and it is extremely useful industrially.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明による一実施例の平面図、 第2図は本発明による一実施例を工程順に示す側断面
図、 第3図は従来の製造方法の平面図、 第4図は従来の製造方法を工程順に示す側断面図、 である。 図において、 1は乾板、 1aはガラス基板、 1bはクロム層、 2はレジスト、 3は導電材、 4はホルダ、 5は導通ピン、 を示す。
FIG. 1 is a plan view of an embodiment according to the present invention, FIG. 2 is a side sectional view showing an embodiment of the present invention in the order of steps, FIG. 3 is a plan view of a conventional manufacturing method, and FIG. It is a sectional side view which shows a manufacturing method in order of process. In the figure, 1 is a dry plate, 1a is a glass substrate, 1b is a chrome layer, 2 is a resist, 3 is a conductive material, 4 is a holder, and 5 is a conduction pin.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】荷電粒子線露光による、周辺部には金属層
が形成されていない乾板の製造工程において、 前記乾板の、該金属層が形成された領域から該金属層が
形成されない領域へと延在するように少なくとも単層の
樹脂膜を塗布形成する工程と、 次いで、該樹脂膜上であって、該金属層の周辺領域上か
ら該金属層が形成されない領域上まで延在するように、
水溶性の導電層を形成する工程と、 次いで、該導電層および前記樹脂膜を突き抜けて該金属
層に導通ピンを電気的に接触させる工程と、 次いで、該樹脂膜に荷電粒子線を照射して、該樹脂膜が
蓄積した電荷を、該導通ピンを通して放電する工程と、 次いで、該乾板を水洗し、該水溶性の導電層を除去する
工程と、 を有することを特徴とする荷電粒子線露光における乾板
の製造方法。
1. In a process of manufacturing a dry plate having no metal layer formed in a peripheral portion by charged particle beam exposure, from a region of the dry plate where the metal layer is formed to a region where the metal layer is not formed. A step of coating and forming at least a single-layer resin film so as to extend, and then, extending on the resin film from a peripheral region of the metal layer to a region where the metal layer is not formed. ,
A step of forming a water-soluble conductive layer, a step of penetrating the conductive layer and the resin film to electrically contact a conductive pin with the metal layer, and then irradiating the resin film with a charged particle beam And then discharging the electric charge accumulated in the resin film through the conduction pin, and then washing the dry plate with water to remove the water-soluble conductive layer. Method for producing dry plate in exposure.
JP62055764A 1987-03-10 1987-03-10 Method for producing dry plate in charged particle beam exposure Expired - Lifetime JPH07114182B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62055764A JPH07114182B2 (en) 1987-03-10 1987-03-10 Method for producing dry plate in charged particle beam exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62055764A JPH07114182B2 (en) 1987-03-10 1987-03-10 Method for producing dry plate in charged particle beam exposure

Publications (2)

Publication Number Publication Date
JPS63221617A JPS63221617A (en) 1988-09-14
JPH07114182B2 true JPH07114182B2 (en) 1995-12-06

Family

ID=13007919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62055764A Expired - Lifetime JPH07114182B2 (en) 1987-03-10 1987-03-10 Method for producing dry plate in charged particle beam exposure

Country Status (1)

Country Link
JP (1) JPH07114182B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19811081C1 (en) * 1998-03-13 1999-10-28 Siemens Ag Holding device for photoblanks
DE19853093B4 (en) * 1998-11-18 2004-11-04 Leica Microsystems Lithography Gmbh Method and arrangement for exposing a substrate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5799739A (en) * 1980-12-12 1982-06-21 Toshiba Corp Charged beam exposure method
JPS57170547U (en) * 1981-04-20 1982-10-27
JPS61151333U (en) * 1985-03-12 1986-09-18

Also Published As

Publication number Publication date
JPS63221617A (en) 1988-09-14

Similar Documents

Publication Publication Date Title
JPH07114182B2 (en) Method for producing dry plate in charged particle beam exposure
US3986876A (en) Method for making a mask having a sloped relief
US4655874A (en) Process for smoothing a non-planar surface
US4612274A (en) Electron beam/optical hybrid lithographic resist process in acoustic wave devices
JPS5921540B2 (en) Method of forming photoresist pattern
JPH041492B2 (en)
KR101407494B1 (en) Method for structuring conductive pattern and structure with conductive pattern
JPS55140229A (en) Method for formation of fine pattern
JP2002025935A (en) Conductor member forming method and pattern forming method
JPS604221A (en) Manufacture of semiconductor device
JPH01187926A (en) Manufacture of mask and reticle
JPH07161721A (en) Method of flattening thick film resist
JPS62171143A (en) Multilayer interconnection method
JP2557566B2 (en) Method for manufacturing exposure mask
JPS63215038A (en) Formation of resist pattern
JPH02103046A (en) Manufacture of mask for producing semiconductor and hard mask blank placing table
JPH01173717A (en) Blank plate
JPH03183113A (en) Numbering method for wafer for semiconductor device
JPS5856422A (en) Formation of pattern
JPS58169910A (en) Method for forming fine pattern
JPH01212909A (en) Electrode forming method
JPS61262741A (en) Masking substrate
JPH0253060A (en) Production of semiconductor device
JPS6153849B2 (en)
JPH03147315A (en) Formation of pattern