JPH07113160A - Vacuum deposition device - Google Patents

Vacuum deposition device

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Publication number
JPH07113160A
JPH07113160A JP28020493A JP28020493A JPH07113160A JP H07113160 A JPH07113160 A JP H07113160A JP 28020493 A JP28020493 A JP 28020493A JP 28020493 A JP28020493 A JP 28020493A JP H07113160 A JPH07113160 A JP H07113160A
Authority
JP
Japan
Prior art keywords
source
vacuum chamber
vapor
temperature
sulfur
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28020493A
Other languages
Japanese (ja)
Inventor
Takeshi Yo
桓 楊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yamaha Corp
Original Assignee
Yamaha Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamaha Corp filed Critical Yamaha Corp
Priority to JP28020493A priority Critical patent/JPH07113160A/en
Publication of JPH07113160A publication Critical patent/JPH07113160A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To correctly control the temperature of the deposition source through a wide range in a vacuum deposition device. CONSTITUTION:A source container 12 to store the source substance SS such as sulfur is heated by a heater 16 in a vacuum chamber 10 to produce the vapor of the source substance SS, and this vapor is guided to a substrate 26 to be treated in the upper position to execute the deposition while this vapor is heated by heaters 20, 24 through a vapor guide tube 14 and a cup-shaped surrounding member 22. The temperature of the vapor source can be correctly controlled in the range of, e.g. 60 deg.C-170 deg.C by providing a cooling means such as a water-cooling jacket 18 around the source container 12 through the heater 16.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】この発明は、ソース物質として硫
黄を用いる場合等に好適な真空蒸着装置に関し、特にソ
ース容器の周囲に加熱手段を介して冷却手段を設けたこ
とにより蒸着源温度を広い範囲で正確に制御可能とした
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum vapor deposition apparatus suitable for the case where sulfur is used as a source substance, and in particular, a vapor deposition source temperature is widened by providing a cooling means around a source container through a heating means. It can be controlled accurately within the range.

【０００２】[0002]

【従来の技術】最近、シリコンやガリウムヒ素の次に、
ＺｎＳｅ，ＺｎＳ，ＳｒＳ等のＩＩ−ＶＩ族化合物半導
体が注目されており、特に可視域の光デバイスにはこの
種の半導体が欠かせない。2. Description of the Related Art Recently, next to silicon and gallium arsenide,
Group II-VI compound semiconductors such as ZnSe, ZnS, and SrS are drawing attention, and these kinds of semiconductors are indispensable especially for optical devices in the visible region.

【０００３】このような半導体を扱う場合、ソース物質
として硫黄（Ｓ）を用いて真空蒸着を行なうことがある
が、真空室内では蒸着源としての硫黄源の周囲の温度が
上昇してしまうため、次の（イ）〜（ハ）のような対策
がとられていた。When handling such semiconductors, vacuum deposition may be performed using sulfur (S) as a source material, but since the temperature around the sulfur source as a deposition source rises in the vacuum chamber, The following measures (a) to (c) were taken.

【０００４】（イ）真空室内に硫黄源を設け、遮断材で
温度上昇を防ぐか又はノズルなどでコンダクタンスを減
らす。(A) A sulfur source is provided in the vacuum chamber to prevent a temperature rise with a blocking material or to reduce conductance with a nozzle or the like.

【０００５】（ロ）硫黄源を真空室外に設け、硫黄源か
ら真空室内に配管により硫黄蒸気を供給する。(B) A sulfur source is provided outside the vacuum chamber, and sulfur vapor is supplied from the sulfur source into the vacuum chamber by piping.

【０００６】（ハ）真空室外に単純硫黄源の代りにＨ2
Ｓガス源を設け、Ｈ2 Ｓガス源から真空室内に配管によ
りＨ2 Ｓガスを供給する。(C) H 2 is used outside the vacuum chamber instead of the simple sulfur source.
An S gas source is provided, and H 2 S gas is supplied from the H 2 S gas source into the vacuum chamber by piping.

【０００７】[0007]

【発明が解決しようとする課題】上記した（イ）の対策
によると、硫黄源の温度を正確に制御できず、硫黄が少
なかったり、多かったりした。硫黄が少ないと良質な膜
が得られず、硫黄をたくさん飛ばすと真空度が劣化し、
排気系にもダメージを与える。According to the above-mentioned measure (a), the temperature of the sulfur source cannot be accurately controlled, and the amount of sulfur is small or large. If the amount of sulfur is low, a good quality film cannot be obtained, and if a large amount of sulfur is blown, the degree of vacuum will deteriorate,
It also damages the exhaust system.

【０００８】上記した（ロ），（ハ）の対策によると、
配管等の設備が複雑化する。また、（ロ）の対策では、
真空室外で硫黄源の温度をある程度正確に制御できる
が、汚染問題などは（イ）の対策と同様である。さら
に、（ハ）の対策では、真空度劣化の問題はなくなる
が、Ｓ（硫黄）がうまく分離して単体で被処理基板に到
達する保証はない。According to the above measures (b) and (c),
The equipment such as piping becomes complicated. In addition, in the measure of (b),
Although the temperature of the sulfur source can be controlled to some extent outside the vacuum chamber, the problem of contamination is the same as in (a). Further, although the measure of (C) eliminates the problem of the degree of vacuum deterioration, there is no guarantee that S (sulfur) will be successfully separated and will reach the substrate to be processed by itself.

【０００９】この発明の目的は、設備をさほど複雑化す
ることなく蒸着源温度を自由に且つ正確に制御可能とし
た新規な真空蒸着装置を提供することにある。An object of the present invention is to provide a novel vacuum vapor deposition apparatus capable of freely and accurately controlling the vapor deposition source temperature without complicating the equipment so much.

【００１０】[0010]

【課題を解決するための手段】この発明に係る真空蒸着
装置は、真空に排気される真空室と、この真空室内に配
置され、蒸着用のソース物質を収容するソース容器と、
前記真空室内で前記ソース容器の周囲に設けられ、前記
ソース物質を蒸発させるべく加熱する第１の加熱手段
と、前記真空室内で前記ソース容器の上方に被処理基板
を保持する保持手段と、前記真空室内に配置され、前記
ソース容器から前記被処理基板に向けて上方に前記ソー
ス物質の蒸気を案内する案内手段と、前記真空室内に配
置され、前記案内手段を加熱する第２の加熱手段とを備
えたものであって、前記ソース容器の周囲に前記第１の
加熱手段を介して冷却手段を設けたことを特徴とするも
のである。A vacuum vapor deposition apparatus according to the present invention comprises a vacuum chamber evacuated to a vacuum, a source container arranged in the vacuum chamber and containing a source material for vapor deposition,
First heating means provided around the source container in the vacuum chamber for heating to vaporize the source material; holding means for holding the substrate to be processed above the source container in the vacuum chamber; Guide means arranged in the vacuum chamber for guiding the vapor of the source material upward from the source container toward the substrate to be processed; and second heating means arranged in the vacuum chamber for heating the guide means. And a cooling means provided around the source container via the first heating means.

【００１１】[0011]

【作用】この発明の構成によれば、ソース容器の周囲に
第１の加熱手段を介して冷却手段を設けたので、第２の
加熱手段等により真空室内が高温になっても、ソース容
器内の温度を冷却手段で低くしたり、第１の加熱手段で
高くしたりして自由に且つ正確に蒸着源温度を制御可能
である。According to the structure of the present invention, since the cooling means is provided around the source container via the first heating means, even if the temperature inside the vacuum chamber becomes high due to the second heating means or the like, It is possible to freely and accurately control the temperature of the vapor deposition source by lowering the temperature of 1 by the cooling means or increasing it by the first heating means.

【００１２】[0012]

【実施例】図１は、この発明の一実施例に係る真空蒸着
装置を示すものである。1 shows a vacuum vapor deposition apparatus according to an embodiment of the present invention.

【００１３】真空室１０内には、硫黄等のソース物質Ｓ
Ｓを収容したソース容器１２が配置されると共に、容器
１２を取囲むようにヒータ１６を介して水冷ジャケット
１８が設けられている。ヒータ１６は、ソース物質ＳＳ
を蒸発させるべく加熱するものである。水冷ジャケット
１８は、ヒータ１６とソース容器１２内のソース物質Ｓ
Ｓとを冷却するためのもので、図示しない配管により冷
却水が循環するようになっている。A source material S such as sulfur is contained in the vacuum chamber 10.
A source container 12 containing S is arranged, and a water cooling jacket 18 is provided so as to surround the container 12 via a heater 16. The heater 16 is a source material SS
Is heated to evaporate. The water cooling jacket 18 includes the heater 16 and the source material S in the source container 12.
It is for cooling S and S, and cooling water is circulated by a pipe (not shown).

【００１４】ソース容器１２は、上方に延長する導気管
１４を有しており、導気管１４の途中には、導気管１４
の開口端を取囲むようなカップ状の囲い部材２２が装着
されている。ソース容器１２内で発生されるソース物質
ＳＳの蒸気は、導気管１４を介して上方に案内され、導
気管１４の開口端から放出される。囲い部材２２は、導
気管１４の開口端から放出される蒸気が広がるのを防止
するためのものである。The source container 12 has an air guide tube 14 extending upward, and the air guide tube 14 is provided in the middle of the air guide tube 14.
A cup-shaped enclosing member 22 that surrounds the open end of is attached. The vapor of the source material SS generated in the source container 12 is guided upward through the air guide pipe 14 and is discharged from the open end of the air guide pipe 14. The enclosure member 22 is for preventing the vapor discharged from the open end of the air guide tube 14 from spreading.

【００１５】導気管１４においてソース容器１２と囲い
部材２２とに挟まれる部分には、これを取囲むようにヒ
ータ２０が設けられている。また、囲い部材２２の周囲
にもヒータ２４が設けられている。これらのヒータ２
０，２４は、導気管１４及び囲い部材２２と、これらの
中を通るソース物質の蒸気とを加熱するためのものであ
る。A heater 20 is provided so as to surround the portion of the air guide tube 14 between the source container 12 and the enclosing member 22. A heater 24 is also provided around the enclosing member 22. These heaters 2
Numerals 0 and 24 are for heating the air guide tube 14 and the enclosing member 22 and the vapor of the source material passing through them.

【００１６】囲い部材２２の開口端近傍には、基板ホル
ダ１８で保持された被処理基板２６が被処理面を下向き
にして配置されている。被処理基板２６の上方には、基
板２６を加熱するためのヒータ３０が設けられている。
導気管１４の開口端から放出されるソース物質ＳＳの蒸
気は、囲い部材２２に案内されて基板２６の被処理面に
向って上昇し、被処理面に蒸着される。A substrate 26 to be processed held by the substrate holder 18 is arranged near the open end of the enclosure member 22 with the surface to be processed facing downward. A heater 30 for heating the substrate 26 is provided above the substrate 26 to be processed.
The vapor of the source material SS emitted from the open end of the air guide tube 14 is guided by the enclosure member 22 and rises toward the surface to be processed of the substrate 26, and is vapor-deposited on the surface to be processed.

【００１７】上記した構成を有する真空蒸着装置によれ
ば、ソース容器１２をヒータ１６を介して水冷ジャケッ
ト１８で冷却するようにしたので、蒸着源の温度を広い
範囲で正確に制御可能となる。一例としてソース物質Ｓ
Ｓとして硫黄を用いる場合、目標温度は１２０℃である
が、周囲がヒータ２０，２４等により高温であっても、
水冷ジャケット１８による冷却で蒸着源温度を６０℃前
後に抑えることができる。また、ヒータ１６で加熱する
と、１７０℃位にすることもできる。従って、高温の真
空室１０内で蒸着源温度を自由に且つ正確に制御するこ
とができる。According to the vacuum vapor deposition apparatus having the above structure, since the source container 12 is cooled by the water cooling jacket 18 via the heater 16, the temperature of the vapor deposition source can be accurately controlled in a wide range. Source material S as an example
When sulfur is used as S, the target temperature is 120 ° C., but even if the ambient temperature is high due to the heaters 20 and 24,
The evaporation source temperature can be suppressed to around 60 ° C. by cooling with the water cooling jacket 18. Further, when heated by the heater 16, the temperature can be about 170 ° C. Therefore, the vapor deposition source temperature can be freely and accurately controlled in the high temperature vacuum chamber 10.

【００１８】導気管１４の開口端の温度が低いと、蒸発
した硫黄が低温部に再付着してしまう。しかし、上記実
施例の構成では、導気管１４を長くできることと、ソー
ス容器１２の周囲に冷却手段を設けたこととにより、蒸
着源の温度上昇なしにヒータ２０，２４で導気管１４や
囲い部材２２を十分に温めることができる。従って、導
気管１４や囲い部材２２への硫黄付着を防止することが
できる。If the temperature at the open end of the air guide pipe 14 is low, the evaporated sulfur will redeposit on the low temperature portion. However, in the structure of the above-described embodiment, since the air guide pipe 14 can be made long and the cooling means is provided around the source container 12, the air guide pipe 14 and the surrounding member can be provided by the heaters 20 and 24 without increasing the temperature of the vapor deposition source. 22 can be warmed sufficiently. Therefore, it is possible to prevent sulfur from adhering to the air guide pipe 14 and the surrounding member 22.

【００１９】上記実施例の構成では、導気管１４を長く
できることから、硫黄を基板に効率よく「発射」させる
ことができる。また、基板近くに基板温度と同じ位に加
熱された囲い部材２２を設けたので、硫黄が必要以上に
真空室１０内に広がるのを防止することができる。In the structure of the above embodiment, since the air guide pipe 14 can be lengthened, sulfur can be efficiently "fired" onto the substrate. Further, since the enclosure member 22 heated to the same temperature as the substrate is provided near the substrate, it is possible to prevent sulfur from unnecessarily spreading into the vacuum chamber 10.

【００２０】[0020]

【発明の効果】以上のように、この発明によれば、ソー
ス容器の周囲に加熱手段を介して冷却手段を設けたの
で、蒸着源温度を広い範囲で正確に制御することがで
き、処理態様が豊富になると共に歩留りが向上する効果
が得られるものである。As described above, according to the present invention, since the cooling means is provided around the source container through the heating means, the temperature of the vapor deposition source can be accurately controlled in a wide range, and the processing mode can be improved. It is possible to obtain the effect of increasing the yield and improving the yield.

【００２１】その上、真空室外に蒸着源又はガス源を設
けるのではないため、設備が簡単で済む利点もある。Moreover, since the vapor deposition source or the gas source is not provided outside the vacuum chamber, there is an advantage that the equipment can be simple.

【図面の簡単な説明】[Brief description of drawings]

【図１】 この発明の一実施例に係る真空蒸着装置を示
す断面図である。FIG. 1 is a sectional view showing a vacuum vapor deposition device according to an embodiment of the present invention.

【符号の説明】[Explanation of symbols]

１０：真空室、１２：ソース容器、１４：導気管、１
６，２０，２４，３０：ヒータ、１８：水冷ジャケッ
ト、２２：囲い部材、２６：被処理基板、２８：基板ホ
ルダ。10: vacuum chamber, 12: source container, 14: air guide tube, 1
6, 20, 24, 30: heater, 18: water cooling jacket, 22: enclosure member, 26: substrate to be processed, 28: substrate holder.

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】真空に排気される真空室と、 この真空室内に配置され、蒸着用のソース物質を収容す
るソース容器と、 前記真空室内で前記ソース容器の周囲に設けられ、前記
ソース物質を蒸発させるべく加熱する第１の加熱手段
と、 前記真空室内で前記ソース容器の上方に被処理基板を保
持する保持手段と、 前記真空室内に配置され、前記ソース容器から前記被処
理基板に向けて上方に前記ソース物質の蒸気を案内する
案内手段と、 前記真空室内に配置され、前記案内手段を加熱する第２
の加熱手段とを備えた真空蒸着装置であって、 前記ソース容器の周囲に前記第１の加熱手段を介して冷
却手段を設けたことを特徴とする真空蒸着装置。1. A vacuum chamber that is evacuated to a vacuum, a source container that is disposed in the vacuum chamber and that contains a source material for vapor deposition, and a source container that is provided around the source container in the vacuum chamber and that stores the source material. First heating means for heating to evaporate, holding means for holding the substrate to be processed in the vacuum chamber above the source container, and disposed in the vacuum chamber from the source container toward the substrate to be processed A guide means for guiding the vapor of the source material upward; and a second means arranged in the vacuum chamber for heating the guide means.
And a cooling means provided around the source container via the first heating means.
JP28020493A 1993-10-13 1993-10-13 Vacuum deposition device Pending JPH07113160A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28020493A JPH07113160A (en) 1993-10-13 1993-10-13 Vacuum deposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28020493A JPH07113160A (en) 1993-10-13 1993-10-13 Vacuum deposition device

Publications (1)

Publication Number Publication Date
JPH07113160A true JPH07113160A (en) 1995-05-02

Family

ID=17621768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28020493A Pending JPH07113160A (en) 1993-10-13 1993-10-13 Vacuum deposition device

Country Status (1)

Country Link
JP (1) JPH07113160A (en)

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