JPH03214621A - Heat-treatment apparatus of compound semiconductor substrate - Google Patents
Heat-treatment apparatus of compound semiconductor substrateInfo
- Publication number
- JPH03214621A JPH03214621A JP1014390A JP1014390A JPH03214621A JP H03214621 A JPH03214621 A JP H03214621A JP 1014390 A JP1014390 A JP 1014390A JP 1014390 A JP1014390 A JP 1014390A JP H03214621 A JPH03214621 A JP H03214621A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- container
- compound semiconductor
- semiconductor substrate
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 69
- 238000010438 heat treatment Methods 0.000 title claims abstract description 41
- 150000001875 compounds Chemical class 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000009434 installation Methods 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 12
- 238000001816 cooling Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 6
- 239000000498 cooling water Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052753 mercury Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000010453 quartz Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概 要］
化合物半導体基板の熱処理装置に関し、熱処理後の化合
物半導体基板が平衡状態を凍結するために栄、激に冷却
される装置を目的とし、熱処理用ガスを供給するソース
の収容容器と、熱処理すべき化合物半導体基板とを所定
の距離を隔てて封入する容器を有し、
前記容器を加熱して蒸発したソースを前記基板内に導入
して該基板のキャリア濃度を所定の値に制御する装置で
あって、
前記化合物半導体基板の設置領域を、前記容器の長手方
向の管軸に沿って切断した平坦面上としたことで構成す
る。または前記化合物半導体基板を設置する治具を設け
、該治具の断面が半円形状で前記封管に内接し、かつ熱
良導性部材で形成されていることで構成する。[Detailed Description of the Invention] [Summary] Regarding a heat treatment apparatus for compound semiconductor substrates, the present invention is intended to be an apparatus in which a compound semiconductor substrate after heat treatment is rapidly cooled in order to freeze the equilibrium state, and a heat treatment gas is supplied. A container for accommodating a source to be heat-treated and a compound semiconductor substrate to be heat-treated are enclosed at a predetermined distance, and the container is heated to introduce the evaporated source into the substrate to increase the carrier concentration of the substrate. The device is configured such that the compound semiconductor substrate is placed on a flat surface cut along the longitudinal tube axis of the container. Alternatively, a jig for installing the compound semiconductor substrate is provided, the jig has a semicircular cross section, is inscribed in the sealed tube, and is made of a material with good thermal conductivity.
？産業上の利用分野〕
本発明は化合物半導体基板の熱処理装置に係り、特に水
銀を含む化合物半導体基板の熱処理装置に関する。? INDUSTRIAL APPLICATION FIELD The present invention relates to a heat treatment apparatus for compound semiconductor substrates, and particularly to a heat treatment apparatus for compound semiconductor substrates containing mercury.
赤外線検知素子のような光検知素子に於いては、エネル
ギーハンドギャソブの狭い水銀・カドミウム・テルル（
｝Ｉｇ＋−ＸｃｄＸＴｅ）のような化合物半導体結晶が
用いられている。In light sensing elements such as infrared sensing elements, the narrow range of energy hand gas such as mercury, cadmium, tellurium (
}Ig+-XcdXTe) is used.
このようなＩｌｇ ＋ − ｘ Ｃｄｘ Ｔｅ結晶は、
結晶成長時点で通常Ｐ゛型１１ｇ＋−ｘ Ｃｄｘ Ｔｅ
結晶であり、光検知素子を形成する場合には、このＰ＋
Ｈｇ，■ＣｄＸＴｅ結晶を水銀（Ｉｌｇ）雰囲気内で加
熱処理して、該Ｈｇ原子を拡散してＰ ” Ｈｇ＋−ｘ
ｃａＸＴｅ結晶の空格子点を埋める。そして該ｔｌｇ
＋−ｘ ＣｄＸＴｅ結晶のキャリア濃度を所定の値に制
御してＮ型Ｈｌ’！ｌ−Ｘ Ｃｄｘ Ｔｅ結晶とずる。Such an Ilg + − x Cdx Te crystal is
Normally P' type 11g+-x Cdx Te at the time of crystal growth
When forming a photodetecting element, this P+
Hg,■CdXTe crystal is heat-treated in a mercury (Ilg) atmosphere, and the Hg atoms are diffused to form P '' Hg+-x
Fill the vacancies in the caXTe crystal. And the tlg
+-x N-type Hl'! by controlling the carrier concentration of the CdXTe crystal to a predetermined value. l-X Cdx Te crystal.
そしてこのＮ型ｔｌｇ＋−ｘ Ｃｄ．． Ｔｅ結晶に電
極を形成して赤外線検知素子とする。And this N-type tlg+-x Cd. ．． Electrodes are formed on the Te crystal to form an infrared sensing element.
［従来の技術］
従来、このようなｕｇ，−、Ｃｄ， Ｔｅの熱処理装置
として第５図、および第５図のｖ−ｖ ′線断面図に示
すように、一端が有底の管状の容器１内の一端部に石英
板よりなる基板設置治具２に熱処理すべきＨｇ，−ｘ
ＣｄＸＴｅ基板３を設置し、該容器１内の他端部に水銀
よりなるソース４を収容したソースの収容容器５を設置
し、該容器１内を排気した後、他端部を有底の石英管６
にて封止する。[Prior Art] Conventionally, as shown in FIG. 5 and a cross-sectional view taken along the line v-v' in FIG. Hg, -x to be heat-treated on a substrate installation jig 2 made of a quartz plate at one end in 1.
A CdXTe substrate 3 is installed, a source storage container 5 containing a source 4 made of mercury is installed at the other end of the container 1, and after the inside of the container 1 is evacuated, the other end is replaced with a bottomed quartz container. tube 6
Seal with.
この基板設置治具２ば図示しないが一端部に開口部を有
し、この基板設置治具に熱処理すべきｌｌｇｘ Ｃｄｘ
Ｔ（４基板を設置した状態で、この開口部に石芙棒の
一端に設けた突起を通して容器】の内部に挿入すると該
容器の内壁に基板設置治具の縁が接触して固定される。This board installation jig 2 has an opening at one end (not shown), and has a llgx Cdx to be heat-treated.
When inserted into the container through the protrusion provided at one end of the stone rod with the four substrates installed, the edge of the substrate installation jig comes into contact with the inner wall of the container and is fixed.
そして上記容器１の温度が２７０゜Ｃとなるような温度
分布曲線を有する加熱炉（図示せず）内に導入し、該容
器を２４時間加熱した後、該容器を加熱炉より取り出し
、該容器のｌｌｇ．ＸＣｄウＴｅ基板を設置している側
より冷却水に浸漬する。そしてｌｌｇＣｄＸＴｅ基板を
急冷して、該結晶内のキャリア濃度が平衡状態を保って
いる状態を凍結してＮ型に変換ざれたｔｌｇ＋−ｘ Ｃ
ｄＸＴｅのキャリア濃度を所定の値に制１卸している。Then, the container 1 is introduced into a heating furnace (not shown) having a temperature distribution curve such that the temperature becomes 270°C, and after heating the container for 24 hours, the container is taken out from the heating furnace and the container is llg. Immerse it in cooling water from the side where the XCd-Te substrate is installed. Then, the llgCdXTe substrate is rapidly cooled to freeze the state in which the carrier concentration within the crystal maintains an equilibrium state, and the tlg+-x C which is converted to N-type.
The carrier concentration of dXTe is controlled to a predetermined value.
然し、上記した従来の熱処理装置では、基板設置治具２
と容器１との接触面積が小さく、かつ該容器１内は真空
であるために熱が伝達し難く、該容器を冷却水に浸漬し
て熱処理後のＮ型のＨｇｆ−ｘＣｄＸＴｅ基板３を急冷
しようとしても、該基板より熱が奪われ難いために基板
を急速に冷却することが困難である。However, in the conventional heat treatment apparatus described above, the substrate installation jig 2
Since the contact area between the substrate 1 and the container 1 is small, and the inside of the container 1 is a vacuum, heat is difficult to transfer. Therefore, the N-type Hgf-xCdXTe substrate 3 after heat treatment should be rapidly cooled by immersing the container in cooling water. Even so, it is difficult to rapidly cool the substrate because heat is difficult to be removed from the substrate.
本発明は上記した問題点を除去し、熱処理後の基板が急
速に冷却されるようにした化合物半導体基板の熱処理装
置の提供を目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a heat treatment apparatus for compound semiconductor substrates that eliminates the above-mentioned problems and allows rapid cooling of the substrate after heat treatment.
５
Ｃ課題を解決するための手段〕
上記した目的を達成する木発明の化合物半導体基板の熱
処理装置は、熱処理用ガスを供給するソースの収容容器
と、熱処理すべき化合物半導体基板とを所定の距離を隔
てて封入する容器を存し、前記容器を加熱して蒸発した
ソースを前記基板内に導入して該基板のキャリア濃度を
所定の値に制御する装置であって、
前記化合物半導体基板を設置する容器の領域を、前記容
器の長手方向の管軸に沿って切断した平坦面上として構
成する。または前記化合物半導体基板を設置する治具を
設け、該治具の断面が半円形状で前記容器に内接し、か
つ熱良導性部材で形成されていることで構成する。5. Means for Solving Problem C] The heat treatment apparatus for compound semiconductor substrates of the invention which achieves the above-mentioned object is characterized in that a housing container for a source that supplies heat treatment gas and a compound semiconductor substrate to be heat treated are separated at a predetermined distance. An apparatus for controlling the carrier concentration of the substrate to a predetermined value by heating the container and introducing an evaporated source into the substrate, the device comprising: a container in which the compound semiconductor substrate is placed; The region of the container is configured as a flat surface cut along the longitudinal tube axis of the container. Alternatively, a jig for installing the compound semiconductor substrate is provided, the jig has a semicircular cross section, is inscribed in the container, and is made of a material with good thermal conductivity.
？作 用〕
熱処理ずべきＨｇ＋■ＣｄＸＴｅの基板の設置領域の管
状の容器の部分を、該管状の容器の長手方向の軸に沿っ
て切断した平坦面上とすることで、基板と容器の接触面
積が大きく成るようにして、該容６
器を冷却水で冷却した際の基板の冷却効果を高める。? Effect] By setting the part of the tubular container in the installation area of the Hg+■CdXTe substrate that should be heat-treated on a flat surface cut along the longitudinal axis of the tubular container, the contact area between the substrate and the container can be reduced. 6 to increase the cooling effect of the substrate when the container is cooled with cooling water.
また上記基板を設置する治具を熱伝導性の良いサファイ
ア、或いはカーボンにて形成するとともに、該治具の断
面を半円形状にして容器の内面に沿わずことで基板設置
治具と容器の接触面積を高め、暴板の冷却効果を高める
ことで、その上に設置される基板の冷却効果を高め、熱
処理後の基板が急速に冷却されるようにする。In addition, the jig for installing the substrate is made of sapphire or carbon, which has good thermal conductivity, and the cross section of the jig is semicircular so that it does not follow the inner surface of the container. By increasing the contact area and increasing the cooling effect of the bare plate, the cooling effect of the substrate placed on it is enhanced, and the substrate after heat treatment is rapidly cooled.
以下、図面を用いて本発明の一実施例につき詳細に説明
する。Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
第１図は本発明の化合物半導体基板の熱処理装置の第１
実施例を示す模式図である。FIG. 1 shows the first part of the heat treatment apparatus for compound semiconductor substrates of the present invention.
It is a schematic diagram showing an example.
第１図に図示するように本発明の容器１１は、熱処理す
べきＨｇ＋−ｘ Ｃｄｘ Ｔｅの基板１２の設”ｆｉｌ
Ｔｉｌ域の部分を、該容器の長手方向の管軸１３に沿
って切断した平坦面１４上とする。As illustrated in FIG.
The Til area is on a flat surface 14 cut along the tube axis 13 in the longitudinal direction of the container.
この平坦面１４の上に熱処理すべきｌｌｇ＋−ｘ Ｃｄ
ｘ Ｔｅ一７
の基板１２を設置し、該容器の他端部に２グラムの水銀
を収容したソースの収容容器１６を設置した状態で該容
器内を真空に排気した後、該容器の他端部を有底の石英
管１７を用いて封止する。llg+-x Cd to be heat treated on this flat surface 14
xTe-7 substrate 12 is installed, and the source storage container 16 containing 2 grams of mercury is installed at the other end of the container, and after evacuating the inside of the container to vacuum, the other end of the container is evacuated. The section is sealed using a bottomed quartz tube 17.
そしてこの容器１１を第２図の２１に示す温度分布曲線
を有する加熱炉（図示せず）内に挿入し、前記容器を２
７０ ’Ｃの温度で２４時間加熱処理した後、該容器１
１を加熱炉より取り出して、該容器を基板が設置されて
いる側より冷却水内に浸漬して象，速冷却する。Then, this container 11 is inserted into a heating furnace (not shown) having a temperature distribution curve shown at 21 in FIG.
After heat treatment at a temperature of 70'C for 24 hours, the container 1
1 is taken out from the heating furnace, and the container is immersed in cooling water from the side where the substrate is installed to rapidly cool it.
このようにすれば、基板の容器に接触する面積が、従来
の装置に比してはるかに大きくなるので、基板の冷却時
間が短縮され、かつ冷却時のキャリア濃度の変動が少な
《なり、結晶面内に於Ｕるキャリア濃度のばらつきや、
加熱処理ロフト間のキャリアのばらつきも従来の装置に
比べて減少するようになった。In this way, the area of the substrate in contact with the container becomes much larger than in conventional equipment, so the cooling time of the substrate is shortened, and the fluctuations in the carrier concentration during cooling are reduced. In-plane carrier concentration variations,
Carrier variation between heat treatment lofts has also been reduced compared to conventional equipment.
また本発明の第２実施例として、第３図に示すように前
記したように熱処理の容器を変形する代わりに、熱処理
の容器の材料の石英ガラスよりも−８
熱伝導率の良いカーボン、或いはサファイア基板を用い
て基板設置治具２２を形成する。In addition, as a second embodiment of the present invention, as shown in FIG. 3, instead of deforming the heat treatment container as described above, the material of the heat treatment container is carbon, which has a better thermal conductivity of -8 than quartz glass, or A substrate installation jig 22 is formed using a sapphire substrate.
そして第４図（ａ）の平面図、第４図（ａｌＩＶ−ＩＶ
′線断面図の第４図ｆｂ）に示すように、この断面構造
を熱処理の容器２３の内面に沿って接触するような半円
形状とすることで、熱処理容器に対する接触面積が大き
くなり、容器を冷却水に浸漬した際に、熱処理された基
板より急速に熱が奪われるようにしても良い。And the plan view of FIG. 4(a), FIG. 4(alIV-IV
As shown in FIG. 4 fb), which is a cross-sectional view taken along the line 23, by making this cross-sectional structure semicircular so that it contacts along the inner surface of the heat treatment container 23, the contact area with the heat treatment container is increased, and the container When the substrate is immersed in cooling water, heat may be removed more rapidly than the heat-treated substrate.
以上述べたように、本発明の化合物半導体基板の熱処理
装置によれば、熱処理後の基板が急速に冷却されるため
に、熱処理時に平衡状態となっているキャリア濃度が、
熱処理後の冷却過程で変動しなくなるので、基板面内、
および熱処理ロフトに対してキャリア濃度の変動しない
高品質のＮ型のＨｇ＋−ｘ Ｃｄ）（ Ｔｅ結晶が得ら
れる。As described above, according to the compound semiconductor substrate heat treatment apparatus of the present invention, since the substrate after heat treatment is rapidly cooled, the carrier concentration in an equilibrium state during heat treatment is
Since it does not fluctuate during the cooling process after heat treatment, the
A high-quality N-type Hg+-xCd)(Te crystal with no variation in carrier concentration depending on the heat treatment loft) is obtained.
以上の説明から明らかなように本発明によれば、キャリ
ア濃度の安定したＮ型Ｈｇ＋−ｘ Ｃｄｘ Ｔｅ結晶が
一９一
得られ、該結晶を用いて光検知素子を形成すると高品質
な光検知素子が得られる効果がある。As is clear from the above description, according to the present invention, 191 N-type Hg+-x Cdx Te crystals with stable carrier concentration can be obtained, and when a photodetecting element is formed using this crystal, high-quality photodetection can be achieved. There is an effect that the element can be obtained.
なお、本実施例ではＨｇ＋−ＸＣｄｘ Ｔｅ基板の熱処
理について述べたが、ＧａＡｓ基板の熱処理にも本発明
の装置は適用できる。Although this embodiment describes heat treatment of a Hg+-XCdx Te substrate, the apparatus of the present invention can also be applied to heat treatment of a GaAs substrate.
第１図は本発明の第１実施例を示す模式図、第２図は加
熱炉の温度分布図、
第３図は本発明の第２実施例を示す模式図、第４図は第
２実施例の基板設置治具の平面図および断面図、
第５図は従来の装置の正面図、
第６図は第５図のＶ〜Ｖ′線断面図である。
図において、
１１．２３は容器、１２ばｌＩｇ＋−ｘ ＣｄＸＴ６基
板、１３は管軸、１４は平坦面、１５はソース、１６は
ソースの収容容器、１７は石英管、２１は加熱炉の温度
分布曲線、２２は基板設置治具を示す。Fig. 1 is a schematic diagram showing the first embodiment of the present invention, Fig. 2 is a temperature distribution diagram of the heating furnace, Fig. 3 is a schematic diagram showing the second embodiment of the invention, and Fig. 4 is a schematic diagram showing the second embodiment. FIG. 5 is a front view of a conventional device, and FIG. 6 is a cross-sectional view taken along the line V-V' in FIG. 5. In the figure, 11.23 is a container, 12 is a CdXT6 substrate, 13 is a tube axis, 14 is a flat surface, 15 is a source, 16 is a source container, 17 is a quartz tube, and 21 is a temperature distribution of a heating furnace. The curve 22 indicates a substrate installation jig.
Claims (2)
と、熱処理すべき化合物半導体基板（１２）とを所定の
距離を隔てて封入する容器（１１）を有し、前記容器（
１１）を加熱して蒸発したソースを前記化合物半導体基
板内に導入して該基板のキャリア濃度を所定の値に制御
する装置に於いて、 前記化合物半導体基板（１２）の設置領域を、前記容器
（１１）の長手方向の管軸（１３）に沿って切断した平
坦面（１４）上としたことを特徴とする化合物半導体基
板の熱処理装置。(1) Source storage container (16
and a compound semiconductor substrate (12) to be heat-treated are enclosed at a predetermined distance apart.
11) In an apparatus for controlling the carrier concentration of the substrate to a predetermined value by introducing a source heated and evaporated into the compound semiconductor substrate, the installation area of the compound semiconductor substrate (12) is set in the container. (11) A heat treatment apparatus for a compound semiconductor substrate, characterized in that the heat treatment apparatus is arranged on a flat surface (14) cut along the longitudinal tube axis (13).
と、熱処理すべき化合物半導体基板（１２）とを所定の
距離を隔てて封入する容器（２３）を有し、前記容器（
２３）を加熱して蒸発したソースを前記化合物半導体基
板（１２）内に導入して該基板のキャリア濃度を所定の
値に制御する装置に於いて、前記容器（２３）内の端部
に、断面が半円形状で前記容器（２３）に内接し、かつ
熱良導性部材で形成されている化合物半導体基板（１２
）を設置する基板設置治具（２２）を設け、該基板設置
治具上に熱処理すべき化合物半導体基板を設置したこと
を特徴とする化合物半導体基板の熱処理装置。(2) Source storage container (16
and a compound semiconductor substrate (12) to be heat-treated are enclosed at a predetermined distance apart from each other.
23) in which a source heated and evaporated is introduced into the compound semiconductor substrate (12) to control the carrier concentration of the substrate to a predetermined value; A compound semiconductor substrate (12) has a semicircular cross section, is inscribed in the container (23), and is made of a thermally conductive material.
), and a compound semiconductor substrate to be heat-treated is placed on the substrate installation jig.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1014390A JP2751516B2 (en) | 1990-01-18 | 1990-01-18 | Heat treatment equipment for compound semiconductor substrates |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1014390A JP2751516B2 (en) | 1990-01-18 | 1990-01-18 | Heat treatment equipment for compound semiconductor substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03214621A true JPH03214621A (en) | 1991-09-19 |
| JP2751516B2 JP2751516B2 (en) | 1998-05-18 |
Family
ID=11742063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1014390A Expired - Fee Related JP2751516B2 (en) | 1990-01-18 | 1990-01-18 | Heat treatment equipment for compound semiconductor substrates |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2751516B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104716027B (en) * | 2013-12-13 | 2017-08-01 | 山东华光光电子股份有限公司 | A kind of device of semiconductor laser Zn impurity sources diffusion and its application |
-
1990
- 1990-01-18 JP JP1014390A patent/JP2751516B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2751516B2 (en) | 1998-05-18 |
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