JPH07110989B2 - Vacuum processing device - Google Patents

Vacuum processing device

Info

Publication number
JPH07110989B2
JPH07110989B2 JP61135331A JP13533186A JPH07110989B2 JP H07110989 B2 JPH07110989 B2 JP H07110989B2 JP 61135331 A JP61135331 A JP 61135331A JP 13533186 A JP13533186 A JP 13533186A JP H07110989 B2 JPH07110989 B2 JP H07110989B2
Authority
JP
Japan
Prior art keywords
opening
vacuum
furnace
transfer chamber
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61135331A
Other languages
Japanese (ja)
Other versions
JPS62290860A (en
Inventor
博 富田
一朗 浅野
達朗 荒木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Heavy Industries Ltd
Original Assignee
Sumitomo Heavy Industries Ltd
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Filing date
Publication date
Application filed by Sumitomo Heavy Industries Ltd filed Critical Sumitomo Heavy Industries Ltd
Priority to JP61135331A priority Critical patent/JPH07110989B2/en
Publication of JPS62290860A publication Critical patent/JPS62290860A/en
Publication of JPH07110989B2 publication Critical patent/JPH07110989B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、プラズマ浸炭処理及び高周波焼入処理を順次
行なうための真空処理装置に関するものである。
TECHNICAL FIELD The present invention relates to a vacuum processing apparatus for sequentially performing a plasma carburizing process and an induction hardening process.

〔従来の技術〕[Conventional technology]

従来、第3図に示す如く加熱チャンバ21内でガス浸炭処
理を行なった後、冷却セクション22でのファン23による
冷却によって被処理物Wの結晶粒を微細化し、しかる後
被処理物Wを加熱チャンバ21内に戻して再び加熱してか
らタンク24内に下降させて油焼入処理を行なっていた。
Conventionally, as shown in FIG. 3, after performing a gas carburizing process in the heating chamber 21, the crystal grains of the object to be processed W are made fine by cooling with the fan 23 in the cooling section 22, and then the object to be processed W is heated. After returning to the inside of the chamber 21 and heating again, it is lowered into the tank 24 to perform the oil quenching process.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

しかし、密閉された1個の炉25内に加熱チャンバ21及び
冷却セクション22を設けており、ガス浸炭後加熱チャン
バ21内の高温ガスが冷却セクション22に流入するため、
冷却セクション22でのファン冷却では被処理物Wの冷却
に時間がかかり、浸炭後に粗大化した心部の結晶粒微細
化が不十分となるから、高品質な焼入れができないと共
に、ガス浸炭と油焼入れを同時に行なえず、加熱チャン
バ21及び冷却セクション22間で被処理物Wを2度も往復
させて加熱と冷却を繰り返す必要があるから、処理能率
が悪いという不都合を免れなかった。
However, since the heating chamber 21 and the cooling section 22 are provided in one closed furnace 25, the high temperature gas in the heating chamber 21 flows into the cooling section 22 after gas carburization.
With the fan cooling in the cooling section 22, it takes time to cool the workpiece W, and the grain refinement of the core that has become coarse after carburization becomes insufficient. Therefore, high-quality quenching is not possible and gas carburization and oil Quenching cannot be performed at the same time, and it is necessary to repeat heating and cooling by reciprocating the workpiece W between the heating chamber 21 and the cooling section 22 twice. Therefore, the inefficiency of processing efficiency cannot be avoided.

〔発明の目的〕[Object of the Invention]

本発明は、前記従来の問題点を解決するためになしたも
ので、真空処理室におけるプラズマ浸炭及び高周波焼入
れなどを互いに独立して行なえるようにして、プラズマ
浸炭などの利点(処理の高速性及び均一性)の有効利用
と、浸炭及び焼入れなどの並行処理とによって処理品質
及び能率の大幅な向上を図り、しかも被処理物を大気に
接触させることなく本体内に搬入し、各真空処理室への
搬出入を行えるようにすることを目的とする。
The present invention has been made to solve the above-mentioned conventional problems, and plasma carburization and induction hardening in a vacuum processing chamber can be performed independently of each other, and advantages such as plasma carburization (high-speed processing , And uniformity) and parallel processing such as carburizing and quenching to significantly improve the processing quality and efficiency. Furthermore, the object to be processed is carried into the main body without contact with the atmosphere, and each vacuum processing chamber The purpose is to be able to carry in and out.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の真空処理装置は、1個の真空搬送室3と、該真
空搬送室3に隣接して設けられた複数個の真空処理室1,
2と、該複数個の真空処理室1,2と前記真空搬送室3とを
連通する開口部5と、該開口部5を開閉する開閉手段4
と、被処理物Wを収納する収納容器9と、前記真空搬送
室3に前記収納容器9を搬入・搬出するための搬入出口
30,31と、該搬入出口30,31を開閉する開閉手段32,33
と、前記真空搬送室3内を走行し前記開口部5を臨んで
位置し得る搬送手段7と、該搬送手段7と前記真空処理
室1,2との間で被処理物Wを前記開口部5を介して受け
渡しする搬送手段6と、前記真空処理室1,2内に設けら
れ該搬送手段6により受け渡された被処理物Wを支持す
る支持手段12,18と、前記真空搬送室3および前記真空
処理室1,2に接続された真空吸引装置とを有し、前記収
納容器9の上部には、被処理物Wを搬入・搬出するため
の開口部34と、該開口部34を開閉するための開閉手段8
が設けられていることを特徴とするものである。
The vacuum processing apparatus of the present invention comprises one vacuum transfer chamber 3 and a plurality of vacuum processing chambers 1 provided adjacent to the vacuum transfer chamber 3.
2, an opening 5 for communicating the plurality of vacuum processing chambers 1, 2 with the vacuum transfer chamber 3, and an opening / closing means 4 for opening and closing the opening 5.
And a storage container 9 for storing the object to be processed W, and a loading / unloading port for loading / unloading the storage container 9 into / from the vacuum transfer chamber 3.
30,31 and opening / closing means 32,33 for opening / closing the loading / unloading ports 30,31
And a transfer means 7 that can travel in the vacuum transfer chamber 3 and be positioned to face the opening 5, and the object W to be processed is transferred between the transfer means 7 and the vacuum processing chambers 1 and 2. Transfer means 6 for delivering and receiving via W, supporting means 12, 18 provided in the vacuum processing chambers 1, 2 for supporting the workpiece W delivered by the transfer means 6, and the vacuum transfer chamber 3 And a vacuum suction device connected to the vacuum processing chambers 1 and 2, and an opening 34 for loading and unloading the workpiece W and an opening 34 at the top of the storage container 9. Opening / closing means 8 for opening / closing
Is provided.

〔実施例〕〔Example〕

以下、本発明の一実施例を第1図に沿い説明する。 An embodiment of the present invention will be described below with reference to FIG.

図中1は1個又は複数個のプラズマ浸炭炉、2は1個又
は複数個の高周波焼入炉で、共通した1個の真空搬送室
3の上部に互いに独立して並設された真空処理室とされ
ており、各室1,2の底壁には、蓋4により開閉可能な開
口部5が設けられている。
In the figure, 1 is one or a plurality of plasma carburizing furnaces, 2 is one or a plurality of induction hardening furnaces, and vacuum treatments are provided in parallel above one common vacuum transfer chamber 3 independently of each other. Each of the chambers 1 and 2 is provided with an opening 5 that can be opened and closed by a lid 4 on the bottom wall of each chamber.

真空搬送室3の床面には、上部室1,2の開口部5の直下
位置にて図示しないシリンダにより互いに独立して昇降
可能な複数本の昇降ラム6と、真空搬送室3床面上を走
行可能で、かつ、昇降ラム6が貫通可能な1台又は複数
台の台車7が設置されている。この台車7には、その昇
降用ジャッキ7Aが設けられており、該台車7上には、上
下の開口部34,34′を覆う上下蓋8,8′を備えた金属製筒
状カバー9が載置可能になっている。このカバー9は、
図示しないガス充填装置と、容器底部のラム昇降口をカ
ーテンシールする図示しないガスカーテン発生装置を備
えている。
On the floor of the vacuum transfer chamber 3, on the floor of the vacuum transfer chamber 3 are a plurality of elevating rams 6 that can be moved up and down independently of each other by a cylinder (not shown) at a position directly below the openings 5 of the upper chambers 1 and 2. One or a plurality of trolleys 7 that can travel through the elevator ram 6 can be installed. The trolley 7 is provided with its lifting jack 7A, and on the trolley 7, there is provided a metal cylindrical cover 9 having upper and lower lids 8 and 8'covering the upper and lower openings 34 and 34 '. It can be placed. This cover 9
A gas filling device (not shown) and a gas curtain generator (not shown) that curtain-seals the ram lifting port at the bottom of the container are provided.

また、真空搬送室3の搬入出口30,31には、開閉可能な
密閉扉32,33が設けられると共に、その外部には搬送コ
ンベヤ10,11が設けられている。該真空搬送室3には図
示しない真空吸引装置及びガス供給装置が接続されてい
る。
Further, the loading / unloading ports 30 and 31 of the vacuum transfer chamber 3 are provided with openable and closable sealing doors 32 and 33, and the transfer conveyors 10 and 11 are provided outside thereof. A vacuum suction device and a gas supply device (not shown) are connected to the vacuum transfer chamber 3.

プラズマ浸炭炉1の床面上、開口部5の周りには、図示
しない移動装置により開口部5の中心に向かい進退可能
な陰極兼用の導電性架台12が設けられ、該架台12の上方
には、網状板又は多孔板等を筒状に形成した陽極13及び
該陽極13を取り囲む高周波コイル14が開口部5と同芯に
配置されており、架台12及び陽極13には放電用直流電源
15が接続され、かつ高周波コイル14には図示しない高周
波発生用交流電源が接続されている。また、プラズマ浸
炭炉1には図示しないガス供給装置と真空吸引装置と排
気装置とが接続されると共に、該炉上部には、炉内に冷
気を供給可能な冷却コイル16及びファン17が設けられて
いる。
On the floor surface of the plasma carburizing furnace 1, around the opening 5, there is provided a conductive base 12 that also serves as a cathode and can move back and forth toward the center of the opening 5 by a moving device (not shown), and above the base 12. An anode 13 and a high-frequency coil 14 surrounding the anode 13 and having a tubular shape such as a mesh plate or a perforated plate are arranged concentrically with the opening 5, and the gantry 12 and the anode 13 have a DC power source for discharge.
An AC power supply for high frequency generation (not shown) is connected to the high frequency coil 14. The plasma carburizing furnace 1 is connected to a gas supply device, a vacuum suction device, and an exhaust device, which are not shown, and a cooling coil 16 and a fan 17 capable of supplying cold air into the furnace are provided above the furnace. ing.

高周波焼入炉2の床面上、開口部5の周りには、図示し
ない移動装置により開口部5の中心に向かい進退可能な
架台18が設けられ、該架台18の上方には、前記高周波コ
イル14と同一電源に接続された高周波コイル19が開口部
5と同芯に配置され、高周波コイル19には、コイル内を
液供給炉に形成し、かつ、多数の細孔を穿設した図示し
ない焼入液スプレイ装置が組み込まれている。また、高
周波焼入炉2には図示しないガス供給装置と真空吸引装
置とが接続されている。
On the floor of the induction hardening furnace 2 and around the opening 5, a gantry 18 which is movable toward and away from the center of the opening 5 by a moving device (not shown) is provided. Above the gantry 18, the high-frequency coil is installed. A high-frequency coil 19 connected to the same power source as 14 is arranged concentrically with the opening 5, and the high-frequency coil 19 has a coil inside which is formed in a liquid supply furnace and is provided with a large number of pores (not shown). A quenching liquid spray device is incorporated. Further, a gas supply device and a vacuum suction device, which are not shown, are connected to the induction hardening furnace 2.

〔作用〕[Action]

被処理物Wは、導電性の支持台20上に載置され、かつ、
蓋8,8′の付いたカバー9内に収められて搬送コンベヤ1
0により搬送され、搬送室3内の台車7上にカバー9ご
と移載された後、台車7によりプラズマ浸炭炉1の直下
の所定位置まで搬送される。
The object to be processed W is placed on the conductive support table 20, and
Conveyor 1 is housed in a cover 9 with lids 8 and 8 '
After being transferred by 0, the cover 9 is transferred onto the carriage 7 in the transfer chamber 3, and then transferred by the carriage 7 to a predetermined position directly below the plasma carburizing furnace 1.

次いで、カバー9の上部蓋8を外し、かつ、シリンダの
ロッド伸長作動により昇降ラム6を上昇させると、昇降
ラム6は台車7及びカバー9の底部蓋8′を貫通して上
昇するから、被処理物Wは、この昇降ラム6上に支持台
20ごと移載されて上昇し、開口部5を経てプラズマ浸炭
炉1内に搬入される。
Next, when the upper lid 8 of the cover 9 is removed and the raising / lowering ram 6 is raised by the rod extension operation of the cylinder, the raising / lowering ram 6 passes through the carriage 7 and the bottom lid 8'of the cover 9 and rises. The processing object W is supported on the lifting ram 6 by a support base.
The whole 20 is transferred and lifted, and is carried into the plasma carburizing furnace 1 through the opening 5.

昇降ラム6が上昇端位置に達すると、架台12は昇降ラム
6に支持された支持台20の下部に移載設置されるから、
シリンダのロッド短縮作動により昇降ラム6を下降させ
ると、支持台20は架台12を介して炉床面上に支持され、
被処理物Wは、陽極13及び高周波コイル14に取り囲まれ
たその中心位置に配置される。昇降ラム6は下降して元
の位置に戻ると共に、開口部5は蓋4で閉じられる(炉
内搬入)。
When the elevating ram 6 reaches the ascending end position, the pedestal 12 is transferred and installed under the support table 20 supported by the elevating ram 6,
When the raising / lowering ram 6 is lowered by the rod shortening operation of the cylinder, the support base 20 is supported on the hearth surface via the base 12,
The object W to be processed is arranged in a central position surrounded by the anode 13 and the high frequency coil 14. The elevating ram 6 descends and returns to its original position, and the opening 5 is closed by the lid 4 (loading into the furnace).

次いで、第2図に示す如く、真空吸引装置の作動でプラ
ズマ浸炭炉1内を減圧し真空度を上げると共に、ガス供
給装置で窒素ガスを供給し、大体真空度が5×10-2〜10
-3Torrに達したとき、この真空度を保持しながら高周波
コイル14に交流電圧を印加して被処理物Wを高周波加熱
で加熱すると、被処理物Wは、A3変態点で機械加工時の
応力を除去されてプラズマ発生温度の大体900〜1000℃
(最大1100℃)まで加熱される。
Next, as shown in FIG. 2, the inside of the plasma carburizing furnace 1 is decompressed by the operation of the vacuum suction device to increase the degree of vacuum, and nitrogen gas is supplied by the gas supply device so that the degree of vacuum is approximately 5 × 10 -2 -10.
When -3 Torr is reached, an AC voltage is applied to the high-frequency coil 14 while maintaining this degree of vacuum to heat the workpiece W by high-frequency heating, and the workpiece W is machined at the A 3 transformation point during machining. The stress of the plasma is removed and the plasma generation temperature is about 900-1000 ℃
It is heated up to 1100 ° C.

次いで、真空度をプラズマ発生真空度の大体0.1〜1.0To
rrまで下げ、かつ、還元性のガスの水素ガスと浸炭性ガ
スのプロパンとを供給すると共に、被処理物W(陰極)
と陽極13との間に直流電圧を印加すると、上記真空度及
び温度下で電離密度の高い負グロー放電が安定的に発生
し気体をプラズマ化するから、プラズマ浸炭を行なうこ
とができる(浸炭期)。
Next, the degree of vacuum is set to approximately 0.1 to 1.0 To
rr, and supplies hydrogen gas as a reducing gas and propane as a carburizing gas, and also treats the workpiece W (cathode)
When a DC voltage is applied between the anode 13 and the anode 13, a negative glow discharge with a high ionization density is stably generated under the above-mentioned degree of vacuum and temperature to turn the gas into plasma, so that plasma carburization can be performed (carburizing period). ).

浸炭後放電を停止し、かつ、真空度を再び上げて、高周
波加熱だけをさらに継続して、被処理物W表面へ炭素を
より多く拡散浸透させる(拡散期)。
After the carburization, the discharge is stopped, the degree of vacuum is raised again, and only the high frequency heating is further continued to diffuse and infiltrate more carbon into the surface of the workpiece W (diffusion period).

次いで、高周波加熱を停止し、かつ、真空度を下げると
共に、冷却コイル16とファン17を作動させて炉内ガスを
冷却循環させると、被処理物Wは冷却され、高温度加熱
で粗大化した結晶粒が微細化される(ガス冷却)。
Next, when the high-frequency heating is stopped and the degree of vacuum is lowered, the cooling coil 16 and the fan 17 are operated to cool and circulate the gas in the furnace, the object W is cooled and coarsened by heating at a high temperature. The crystal grains are refined (gas cooling).

次いで、高周波焼入炉2内及び真空搬送室3内を減圧
し、かつガス供給装置で窒素ガスを充満させると共に、
カバー9の底部をカーテンシールしながら該カバー9内
に窒素ガスを充満させた状態下で開口部5を開き、か
つ、台車7をジャッキアップして炉底に押付け、前記炉
内搬入手順と逆の手順で被処理物Wをプラズマ浸炭炉1
内から搬出し台車7上のカバー9内に収めて蓋8をし、
かつ台車7をジャッキダウンして高周波焼入炉2の直下
の所定位置まで搬送した後、前記と同じ炉内搬入手順で
被処理物Wを高周波焼入炉2内に架台18で支持して高周
波コイル19に取り囲まれたその中心位置に配置し、か
つ、開口部5を閉じ、しかる後、真空吸引装置の作動で
高周波焼入炉2内を減圧し真空度を上げ、真空度が大体
5×10-2〜10-3Torrに達したとき、この真空度を保持し
ながら高周波コイル19に交流電圧を印加して被処理物W
を高周波加熱で750〜850℃に5分間加熱した後、油或は
水等を焼入液スプレイ装置で被処理物Wにスプレイする
と、被処理物Wの焼入処理が完了する。一方、高周波加
熱終了の辺りで炉内圧を大気圧に戻しておき、処理後開
口部5を開き、前記炉内搬入手順と逆の手順で処理完了
品W′は高周波焼入炉2内から搬出され台車7で搬出コ
ンベヤ11へと送り出される。このときカバー9が上部蓋
8とともに外される。
Next, the inside of the induction hardening furnace 2 and the inside of the vacuum transfer chamber 3 are decompressed, and the gas supply device is filled with nitrogen gas,
Opening the opening 5 while curtain-sealing the bottom of the cover 9 and filling the interior of the cover 9 with nitrogen gas, and jacking up the dolly 7 to press it against the furnace bottom, reverse the procedure for carrying in the furnace. Plasma Carburizing Furnace 1
Remove from inside and put in the cover 9 on the dolly 7 and close the lid 8.
Moreover, after the trolley 7 is jacked down and conveyed to a predetermined position directly below the induction hardening furnace 2, the workpiece W is supported in the induction hardening furnace 2 by the pedestal 18 by the same furnace loading procedure as described above. The coil 5 is arranged at the center position surrounded by the coil 19 and the opening 5 is closed. Then, the vacuum suction device is actuated to reduce the pressure in the induction hardening furnace 2 to increase the degree of vacuum, and the degree of vacuum is approximately 5 ×. When the pressure reaches 10 -2 to 10 -3 Torr, an AC voltage is applied to the high-frequency coil 19 while maintaining this degree of vacuum, and the workpiece W is processed.
Is heated at 750 to 850 ° C. for 5 minutes by high frequency heating, and oil or water or the like is sprayed on the object W to be processed with a quenching liquid spraying device, and the quenching treatment of the object W to be processed is completed. On the other hand, the furnace pressure is returned to the atmospheric pressure around the end of the high frequency heating, the post-treatment opening 5 is opened, and the processed product W ′ is carried out from the induction hardening furnace 2 in the reverse procedure of the furnace carrying-in procedure. Then, the cart 7 is sent to the carry-out conveyor 11. At this time, the cover 9 is removed together with the upper lid 8.

ところで、上記作業は、プラズマ浸炭炉1と高周波焼入
炉2が各1個の場合等、浸炭及び焼入れを順次行なう場
合であるが、プラズマ浸炭炉1と高周波焼入炉2が各複
数個である場合には、浸炭処理後の被処理物Wが高周波
焼入炉2に搬入されており、その焼入れ処理を他の被処
理物Wの浸炭処理と並行して行なうことが考えられる。
かかる場合、上記作業で必要な電力は、プラズマ浸炭炉
1ではプラズマ浸炭の浸炭期に400KW、拡散期に200KWで
あるのに対し、高周波焼入炉2では加熱保持に400KWで
あり、拡散期の230分間の間に高周波焼入炉2に電力を
回すことができるから、各炉の独立構造上プラズマ浸炭
処理を行ないながらその拡散期に高周波焼入れ処理を開
始しガス冷却時にかけて、或いはガス冷却時だけで、両
処理を並行して同一の高周波発生電源により行なうこと
ができる。
By the way, the above-mentioned work is a case where carburizing and quenching are sequentially carried out, for example, when the plasma carburizing furnace 1 and the induction hardening furnace 2 are one each, but the plasma carburizing furnace 1 and the induction hardening furnace 2 are plural respectively. In some cases, the object W to be treated after the carburization is carried into the induction hardening furnace 2, and the quenching may be performed in parallel with the carburization of the other objects W to be treated.
In such a case, the electric power required for the above work is 400 KW in the carburizing period of plasma carburizing in the plasma carburizing furnace 1 and 200 KW in the diffusing period, while 400 KW in heating and holding in the induction hardening furnace 2 in the diffusing period. Since the electric power can be supplied to the induction hardening furnace 2 for 230 minutes, the induction hardening process is started during the diffusion period while performing the plasma carburizing process due to the independent structure of each furnace, and during the gas cooling or during the gas cooling. Only by doing so, both processes can be performed in parallel by the same high frequency power source.

〔発明の効果〕〔The invention's effect〕

以上の通り本発明は、各真空処理室においてプラズマ浸
炭及び高周波焼入れなどを互いに独立して行なえるか
ら、浸炭及び焼入れなどの並行処理が可能となり、プラ
ズマ浸炭などの利点(処理の高速性及び均一性)の有効
利用と相俟って処理品質及び能率の大幅な向上を図れる
と共に、高周波発生電源の共用が可能となり、これによ
って設備費の低減と省エネルギーとを図れる。しかも、
被処理物を収納容器に収納して真空搬送室に搬入し、か
つ真空搬送室において収納容器と各真空処理室との間で
被処理物の受け渡しを行うため、被処理物を大気に全く
接触させることなく、プラズマ浸炭及び高周波焼入れな
どの並行処理を行うことができる。
As described above, according to the present invention, since plasma carburization and induction hardening can be performed independently in each vacuum processing chamber, parallel processing such as carburizing and hardening can be performed, and advantages such as plasma carburizing (high speed and uniform processing) can be achieved. In addition to the effective use of the power), the processing quality and efficiency can be significantly improved, and the high-frequency power source can be shared, thereby reducing the facility cost and saving energy. Moreover,
Since the object to be processed is stored in the storage container and carried into the vacuum transfer chamber, and the object to be processed is transferred between the storage container and each vacuum processing chamber in the vacuum transfer chamber, the object to be processed is completely exposed to the atmosphere. It is possible to perform parallel processing such as plasma carburization and induction hardening without performing the above.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の一実施例を示す概要図、第2図は浸炭
焼入処理操業サイクル図、第3図は従来例を示す概要図
である。 1……プラズマ浸炭炉、2……高周波焼入炉、3……真
空搬送室、4……蓋、5……開口部、6……昇降ラム、
7……台車、8……蓋、9……密閉扉、10,11……搬送
コンベヤ、12,18……架台、13……陽極、14,19……高周
波コイル、15……直流電源、16……冷却コイル、17……
ファン、20……支持台、30,31……搬出入口、32,33……
密閉扉、34……開口部。
FIG. 1 is a schematic diagram showing an embodiment of the present invention, FIG. 2 is a carburizing and quenching treatment operation cycle diagram, and FIG. 3 is a schematic diagram showing a conventional example. 1 ... Plasma carburizing furnace, 2 ... Induction hardening furnace, 3 ... Vacuum transfer chamber, 4 ... Lid, 5 ... Opening part, 6 ... Lifting ram,
7 ... carriage, 8 ... lid, 9 ... closed door, 10,11 ... transport conveyor, 12,18 ... frame, 13 ... anode, 14,19 ... high frequency coil, 15 ... DC power supply, 16 …… Cooling coil, 17 ……
Fans, 20 ... Supporting platform, 30,31 ... Carry-in / out port, 32, 33 ...
Sealing door, 34 ... Opening.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 F27B 19/04 F27D 3/12 Z ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display location F27B 19/04 F27D 3/12 Z

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】1個の真空搬送室3と、該真空搬送室3に
隣接して設けられた複数個の真空処理室1,2と、該複数
個の真空処理室1,2と前記真空搬送室3とを連通する開
口部5と、該開口部5を開閉する開閉手段4と、被処理
物Wを収納する収納容器9と、前記真空搬送室3に前記
収納容器9を搬入・搬出するための搬入出口30,31と、
該搬入出口30,31を開閉する開閉手段32,33と、前記真空
搬送室3内を走行し前記開口部5を臨んで位置し得る搬
送手段7と、該搬送手段7と前記真空処理室1,2との間
で被処理物Wを前記開口部5を介して受け渡しする搬送
手段6と、前記真空処理室1,2内に設けられ該搬送手段
6により受け渡された被処理物Wを指示する支持手段1
2,18と、前記真空搬送室3および前記真空処理室1,2に
接続された真空吸引装置とを有し、前記収納容器9の上
部には、被処理物Wを搬入・搬出するための開口部34
と、該開口部34を開閉するための開閉手段8が設けられ
ていることを特徴とする真空処理装置。
1. A vacuum transfer chamber 3, a plurality of vacuum processing chambers 1, 2 provided adjacent to the vacuum transfer chamber 3, a plurality of vacuum processing chambers 1, 2 and the vacuum. An opening 5 that communicates with the transfer chamber 3, an opening / closing means 4 that opens and closes the opening 5, a storage container 9 that stores an object to be processed W, and a loading / unloading of the storage container 9 into / from the vacuum transfer chamber 3. Loading / unloading ports 30 and 31 for
Opening / closing means 32, 33 for opening / closing the carry-in / out ports 30, 31, conveying means 7 that can run in the vacuum transfer chamber 3 and be positioned facing the opening 5, the transfer means 7 and the vacuum processing chamber 1 , 2 to transfer the object W to be processed through the opening 5, and the object W transferred by the transfer means 6 provided in the vacuum processing chambers 1 and 2. Supporting means for pointing 1
2, 18 and a vacuum suction device connected to the vacuum transfer chamber 3 and the vacuum processing chambers 1 and 2, for loading and unloading an object to be processed W on the upper part of the storage container 9. Opening 34
And the opening / closing means 8 for opening / closing the opening 34 is provided.
JP61135331A 1986-06-11 1986-06-11 Vacuum processing device Expired - Lifetime JPH07110989B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61135331A JPH07110989B2 (en) 1986-06-11 1986-06-11 Vacuum processing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61135331A JPH07110989B2 (en) 1986-06-11 1986-06-11 Vacuum processing device

Publications (2)

Publication Number Publication Date
JPS62290860A JPS62290860A (en) 1987-12-17
JPH07110989B2 true JPH07110989B2 (en) 1995-11-29

Family

ID=15149266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61135331A Expired - Lifetime JPH07110989B2 (en) 1986-06-11 1986-06-11 Vacuum processing device

Country Status (1)

Country Link
JP (1) JPH07110989B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014141710A (en) * 2013-01-24 2014-08-07 Y S Denshi Kogyo Kk Plasma processing device
JP2015074818A (en) * 2013-10-11 2015-04-20 Dowaサーモテック株式会社 Carburization hardening facility
JP2018041732A (en) * 2017-09-27 2018-03-15 ワイエス電子工業株式会社 Plasma processing device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100998841B1 (en) 2005-09-26 2010-12-06 아이신에이더블류 가부시키가이샤 Steel members, method for heat treatment of the same, and process for production thereof
JP2007321221A (en) * 2006-06-02 2007-12-13 Hirohisa Taniguchi Compound marquenching apparatus and controlling method therefor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53131930A (en) * 1977-04-25 1978-11-17 Nippon Denshi Kogyo Kk Method of hardening metallic surface by utilizing glow discharge
JPS5925974A (en) * 1982-08-03 1984-02-10 Toyota Motor Corp High-temperature carburization device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014141710A (en) * 2013-01-24 2014-08-07 Y S Denshi Kogyo Kk Plasma processing device
JP2015074818A (en) * 2013-10-11 2015-04-20 Dowaサーモテック株式会社 Carburization hardening facility
JP2018041732A (en) * 2017-09-27 2018-03-15 ワイエス電子工業株式会社 Plasma processing device

Also Published As

Publication number Publication date
JPS62290860A (en) 1987-12-17

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