JPH07109827B2 - CVD equipment - Google Patents
CVD equipmentInfo
- Publication number
- JPH07109827B2 JPH07109827B2 JP26047788A JP26047788A JPH07109827B2 JP H07109827 B2 JPH07109827 B2 JP H07109827B2 JP 26047788 A JP26047788 A JP 26047788A JP 26047788 A JP26047788 A JP 26047788A JP H07109827 B2 JPH07109827 B2 JP H07109827B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- ring
- cvd apparatus
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、CVD装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a CVD apparatus.
（従来の技術） 従来、CVD装置により膜を形成する場合第２図に示すよ
うな構成の装置が用いられていた。(Prior Art) Conventionally, when a film is formed by a CVD apparatus, an apparatus having a structure as shown in FIG. 2 has been used.
同図において、ステンレス鋼，石英などからなる真空容
器１中を真空ポンプ２により排気し、そののち、反応ガ
スをガス導入口３より導入し、電極４、またはコイル５
に電力を印加し、プラズマを発生させ、基板ホルダー６
上の基板７に膜を形成していた。In the figure, the vacuum container 1 made of stainless steel, quartz, or the like is evacuated by a vacuum pump 2, and then a reaction gas is introduced through a gas introduction port 3 to form an electrode 4 or a coil 5.
Power is applied to the substrate holder 6 to generate plasma, and the substrate holder 6
A film was formed on the upper substrate 7.
（発明が解決しようとする課題） 上記従来の構成の装置においては、たとえば、窒化シリ
コンの膜を形成する場合、反応ガスとしてN2SiH4,H2/Si
H4,NH3/SiH4,NH3/SiCl4などの水素を含んだガスを用い
て膜を堆積するので、膜中に水素が混入し、所望する膜
質の膜が得られない欠点があった。(Problems to be Solved by the Invention) In an apparatus having the above-described conventional configuration, for example, when a silicon nitride film is formed, N 2 SiH 4 , H 2 / Si is used as a reaction gas.
Since depositing a film by using H 4, NH 3 / SiH 4 , NH 3 / SiCl 4 gas containing hydrogen such as hydrogen is mixed in the film, there is desired not quality of films obtained disadvantages It was
本発明の目的は、従来の欠点を解消し、膜中への水素混
入を低減することができるCVD装置を提供することであ
る。It is an object of the present invention to provide a CVD apparatus that can solve the conventional drawbacks and reduce hydrogen contamination in the film.
（課題を解決するための手段） 本発明のCVD装置は、基板の外径よりも大きい内径を有
するTiからなるリング内に基板を設置し、この基板上に
膜を形成するものである。(Means for Solving the Problem) The CVD apparatus of the present invention is one in which a substrate is placed in a ring made of Ti having an inner diameter larger than the outer diameter of the substrate, and a film is formed on this substrate.
（作 用） 本発明により、膜中への水素混入を低減することが可能
である。(Operation) According to the present invention, it is possible to reduce hydrogen contamination in the film.
（実施例） 本発明の一実施例を第１図に基づいて説明する。第１図
は本発明のCVD装置の模式図である。同図（ａ），
（ｂ）に示しているように基板はリング内に設置されて
いる。同図において、第２図に示した従来例と同じ部分
には同一符号を付し、その説明を省略する。８はTiリン
グである。(Example) An example of the present invention will be described with reference to FIG. FIG. 1 is a schematic diagram of a CVD apparatus of the present invention. The same figure (a),
The substrate is installed in the ring as shown in (b). In the figure, the same parts as those of the conventional example shown in FIG. 2 are designated by the same reference numerals, and the description thereof will be omitted. 8 is a Ti ring.
第１図（ａ）の構成において、真空容器１内を真空ポン
プ２により排気し、反応ガスとして95％N2/5％SiH4を流
量250cc/分で導入し、高周波電力内200Wを印加してプラ
ズマを発生させ、基板７を特に加熱せずに25分間膜を堆
積した。このとき膜中の水素混入量は、5at％であっ
た。Tiリング８がない場合は25at％であって。またTiリ
ング８をステンレスリングに変えて堆積した膜は、24at
％であった。In the configuration of FIG. 1 (a), the vacuum container 1 is evacuated by the vacuum pump 2, 95% N 2 /5% SiH 4 is introduced as a reaction gas at a flow rate of 250 cc / min, and 200 W of high frequency power is applied. Plasma was generated by using the plasma, and the film was deposited for 25 minutes without heating the substrate 7 in particular. At this time, the amount of hydrogen mixed in the film was 5 at%. If there is no Ti ring 8, it is 25 at%. The film deposited by replacing the Ti ring 8 with a stainless ring is 24 at
%Met.
このことは、プラズマ中の水素がTiリングと反応してTi
H2などの非常に安定した水素化物を形成することによ
り、膜中へ混入する水素量が低減することに基因するも
のである。This means that hydrogen in the plasma reacts with the Ti ring and Ti
This is because formation of a very stable hydride such as H 2 reduces the amount of hydrogen mixed in the film.
（発明の効果） 本発明によれば、Tiリングを有するCVD装置において、T
iリング内に基板を設置し、膜を堆積することで、膜中
に取り込まれる水素の量を低減することが可能となり、
その実用上の効果は大である。(Effect of the Invention) According to the present invention, in a CVD apparatus having a Ti ring, T
By placing the substrate in the i-ring and depositing the film, it is possible to reduce the amount of hydrogen taken into the film.
Its practical effect is great.
第１図は本発明の一実施例におけるCVD装置の模式図、
第２図は従来のCVD装置の模式図である。 １……真空容器、２……真空ポンプ、３……ガス導入
口、４……電極、５……コイル、６……基板ホルダー、
７……基板、８……Tiリング。FIG. 1 is a schematic diagram of a CVD apparatus in one embodiment of the present invention,
FIG. 2 is a schematic diagram of a conventional CVD apparatus. 1 ... vacuum container, 2 ... vacuum pump, 3 ... gas inlet, 4 ... electrode, 5 ... coil, 6 ... substrate holder,
7 ... substrate, 8 ... Ti ring.
Claims (1)
らなるリング内に基板を設置し、前記基板上に膜を形成
することを特徴とするCVD装置。1. A CVD apparatus characterized in that a substrate is placed in a ring made of Ti having an inner diameter larger than the outer diameter of the substrate, and a film is formed on the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26047788A JPH07109827B2 (en) | 1988-10-18 | 1988-10-18 | CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26047788A JPH07109827B2 (en) | 1988-10-18 | 1988-10-18 | CVD equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02109336A JPH02109336A (en) | 1990-04-23 |
| JPH07109827B2 true JPH07109827B2 (en) | 1995-11-22 |
Family
ID=17348495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26047788A Expired - Lifetime JPH07109827B2 (en) | 1988-10-18 | 1988-10-18 | CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07109827B2 (en) |
-
1988
- 1988-10-18 JP JP26047788A patent/JPH07109827B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02109336A (en) | 1990-04-23 |
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