JPH0697246A - 低温における半導体材料の性質を試験する装置および方法 - Google Patents
低温における半導体材料の性質を試験する装置および方法Info
- Publication number
- JPH0697246A JPH0697246A JP3200215A JP20021591A JPH0697246A JP H0697246 A JPH0697246 A JP H0697246A JP 3200215 A JP3200215 A JP 3200215A JP 20021591 A JP20021591 A JP 20021591A JP H0697246 A JPH0697246 A JP H0697246A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- contact
- sample
- semiconductor material
- contacts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 57
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 238000012360 testing method Methods 0.000 title claims description 43
- 238000000034 method Methods 0.000 title claims description 11
- 239000000523 sample Substances 0.000 claims abstract description 93
- 239000004078 cryogenic material Substances 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 4
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 229910052594 sapphire Inorganic materials 0.000 abstract description 6
- 239000010980 sapphire Substances 0.000 abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- 239000007788 liquid Substances 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 4
- 238000013519 translation Methods 0.000 description 4
- 229920004943 Delrin® Polymers 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 229920006328 Styrofoam Polymers 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000008261 styrofoam Substances 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- LRUUNMYPIBZBQH-UHFFFAOYSA-N Methazole Chemical compound O=C1N(C)C(=O)ON1C1=CC=C(Cl)C(Cl)=C1 LRUUNMYPIBZBQH-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
- G01R31/2863—Contacting devices, e.g. sockets, burn-in boards or mounting fixtures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
- G01R31/2862—Chambers or ovens; Tanks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Environmental & Geological Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measuring Leads Or Probes (AREA)
- Sampling And Sample Adjustment (AREA)
- Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Tests Of Electronic Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US565581 | 1990-08-10 | ||
| US07/565,581 US5309088A (en) | 1990-08-10 | 1990-08-10 | Measurement of semiconductor parameters at cryogenic temperatures using a spring contact probe |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0697246A true JPH0697246A (ja) | 1994-04-08 |
Family
ID=24259258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3200215A Pending JPH0697246A (ja) | 1990-08-10 | 1991-08-09 | 低温における半導体材料の性質を試験する装置および方法 |
Country Status (6)
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6313649B2 (en) | 1992-06-11 | 2001-11-06 | Cascade Microtech, Inc. | Wafer probe station having environment control enclosure |
| US6380751B2 (en) * | 1992-06-11 | 2002-04-30 | Cascade Microtech, Inc. | Wafer probe station having environment control enclosure |
| US6002263A (en) | 1997-06-06 | 1999-12-14 | Cascade Microtech, Inc. | Probe station having inner and outer shielding |
| US5929652A (en) * | 1997-09-02 | 1999-07-27 | Midwest Research Institute | Apparatus for measuring minority carrier lifetimes in semiconductor materials |
| US6275060B1 (en) | 1997-09-02 | 2001-08-14 | Midwest Research Institute | Apparatus and method for measuring minority carrier lifetimes in semiconductor materials |
| US6700397B2 (en) | 2000-07-13 | 2004-03-02 | The Micromanipulator Company, Inc. | Triaxial probe assembly |
| US6424141B1 (en) * | 2000-07-13 | 2002-07-23 | The Micromanipulator Company, Inc. | Wafer probe station |
| US6914423B2 (en) | 2000-09-05 | 2005-07-05 | Cascade Microtech, Inc. | Probe station |
| WO2002035169A2 (en) * | 2000-10-24 | 2002-05-02 | L'air Liquide, Society Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude | Methods and apparatus for recycling cryogenic liquid or gas from test chamber |
| WO2003020467A1 (en) | 2001-08-31 | 2003-03-13 | Cascade Microtech, Inc. | Optical testing device |
| US7250626B2 (en) | 2003-10-22 | 2007-07-31 | Cascade Microtech, Inc. | Probe testing structure |
| KR20050122972A (ko) * | 2004-06-26 | 2005-12-29 | 삼성전자주식회사 | 유기 발광소자 분석방법 |
| EP2159580B1 (en) * | 2008-08-26 | 2015-10-07 | Lake Shore Cryotronics, Inc. | Probe tip |
| US8319503B2 (en) | 2008-11-24 | 2012-11-27 | Cascade Microtech, Inc. | Test apparatus for measuring a characteristic of a device under test |
| US10720372B2 (en) | 2018-10-26 | 2020-07-21 | Microsoft Technology Licensing, Llc | Conduction cooling for circuit boards |
| EP4439101A1 (en) * | 2023-03-31 | 2024-10-02 | kiutra GmbH | Apparatus for testing and/or operating electronic devices |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3710251A (en) * | 1971-04-07 | 1973-01-09 | Collins Radio Co | Microelectric heat exchanger pedestal |
| JPS5492065A (en) * | 1977-12-29 | 1979-07-20 | Fuji Electric Co Ltd | Measuring method for manufacturing process evaluation of semiconductor device |
| US4167791A (en) * | 1978-01-25 | 1979-09-11 | Banavar Jayanth R | Non-volatile information storage arrays of cryogenic pin diodes |
| US4177093A (en) * | 1978-06-27 | 1979-12-04 | Exxon Research & Engineering Co. | Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide |
| USRE32457E (en) * | 1981-09-30 | 1987-07-07 | Rca Corporation | Scanning capacitance microscope |
| JP2690908B2 (ja) * | 1987-09-25 | 1997-12-17 | 株式会社日立製作所 | 表面計測装置 |
| JPH02205046A (ja) * | 1989-02-03 | 1990-08-14 | Hitachi Ltd | 半導体表面計則方法およびその装置 |
| US5103183A (en) * | 1990-01-26 | 1992-04-07 | Rockwell International Corporation | Method of profiling compensator concentration in semiconductors |
| US5023561A (en) * | 1990-05-04 | 1991-06-11 | Solid State Measurements, Inc. | Apparatus and method for non-invasive measurement of electrical properties of a dielectric layer in a semiconductor wafer |
-
1990
- 1990-08-10 US US07/565,581 patent/US5309088A/en not_active Expired - Lifetime
-
1991
- 1991-08-02 EP EP91113038A patent/EP0470521B1/en not_active Expired - Lifetime
- 1991-08-02 DE DE69128052T patent/DE69128052T2/de not_active Expired - Fee Related
- 1991-08-09 KR KR1019910013775A patent/KR100189595B1/ko not_active Expired - Fee Related
- 1991-08-09 JP JP3200215A patent/JPH0697246A/ja active Pending
- 1991-11-28 TW TW080109357A patent/TW212828B/zh active
-
1994
- 1994-03-23 US US08/216,753 patent/US5459408A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR920005292A (ko) | 1992-03-28 |
| EP0470521B1 (en) | 1997-10-29 |
| DE69128052D1 (de) | 1997-12-04 |
| EP0470521A3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1994-03-30 |
| KR100189595B1 (ko) | 1999-06-01 |
| US5309088A (en) | 1994-05-03 |
| TW212828B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-09-11 |
| US5459408A (en) | 1995-10-17 |
| EP0470521A2 (en) | 1992-02-12 |
| DE69128052T2 (de) | 1998-05-14 |
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