JPH0695356A - Formation of data for mask - Google Patents

Abstract

PURPOSE:To form data for an exposure mask in a short period of time. CONSTITUTION:The layout data 2 is formed by making the data smaller by a prescribed quantity (for example, 0.2mum) than the pattern size 1 of a semiconductor element to be produced. As a result, the data (set at the size to offset the pattern shift in an actual stage) of the mask for exposure is resized and formed in the direction of expanding the layout data 2.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask data creating method. More specifically, the present invention relates to a method of creating data of an exposure mask used for photolithography in the field of semiconductor manufacturing.

[0002]

2. Description of the Related Art In a semiconductor manufacturing process, a semiconductor element is often not finished according to a pattern (data) of an exposure mask due to restrictions such as exposure conditions and resolution performance in a photolithography process. Normally, -0.2 μm to +0.2
A pattern shift occurs in the μm range (a minus sign indicates that the pattern shrinks, and a plus sign indicates that the pattern expands). Therefore, in order to cancel such a pattern shift, a process (resizing) of enlarging or reducing the exposure mask data is generally performed in advance. That is, as shown in FIG. 2, when the pattern is shifted in the actual process in the direction of shrinking, the plus resizing is performed, while when the pattern is shifted in the actual process in the direction of expanding, the minus resizing is performed. In the figure, 11 is layout data according to the dimensions of the semiconductor element to be manufactured, 12
Indicates data after plus resize, and 12 'indicates data after minus resize.

Conventionally, first, all data is developed according to the dimensions of a semiconductor element to be produced and a layout is performed, and then the layout data 11 is resized to produce exposure mask data 12 or 12 '. . The reason for this is that if resizing is performed for each cell that is a basic unit, as shown in FIG. 3, when minus resizing is performed, gaps 21, ..., 23 are generated between cells, This is because there is a risk that the pattern 12 'that should be originally connected may be broken.

[0004]

However, under the condition that the integration of semiconductor elements is highly advanced, the developed layout data 11 usually becomes a huge amount. There is a problem that a huge amount of time is required for processing.

SUMMARY OF THE INVENTION An object of the present invention is to provide a mask data creating method capable of creating exposure mask data in a short time.

[0006]

In order to achieve the above object, according to the present invention, after layout data is created according to the pattern dimensions of a semiconductor element to be manufactured, the layout data is subjected to pattern shift in an actual process. In the mask data creating method of resize to an offset dimension to be used as exposure mask data, the layout data is created by reducing the layout data by a predetermined amount smaller than the pattern size of the semiconductor element to be created, It is characterized in that the mask data is created by resizing the layout data in a direction in which the layout data is enlarged.

[0007]

Since the exposure mask data is resized in a direction in which the layout data once created is enlarged, there is no possibility that the patterns that should be connected should be disconnected due to the resizing. Therefore, it is possible to perform resizing for each cell that is a basic unit. In this case, after resizing in cell units, the obtained data can be simply combined and used. Therefore, the data processing amount is greatly reduced, and the data of the exposure mask is created in a shorter time than the conventional case. Particularly, the effect is great in a semiconductor memory device having many repeating patterns.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The mask data creating method of the present invention will be described in detail below with reference to embodiments.

In an actual exposure process, it is assumed that a pattern shift of 0.1 μm, that is, +0.1 μm occurs in the direction in which the pattern of the exposure mask expands. In this case, the exposure mask needs to be finished in a size reduced by 0.1 μm from the pattern size of the semiconductor element to be manufactured so as to cancel the pattern shift.

First, as shown in FIG. 1, a pattern (layout data) 2 having a size reduced by 0.2 μm from the pattern 1 of the semiconductor element to be manufactured is laid out. At this time, of course, the basic cells are connected to each other. Next, the layout data 2 is resized by 0.1 .mu.m to obtain exposure mask data.

As described above, since the layout data 2 is plus-resized to create the exposure mask data, there is no possibility that the patterns that should be connected should be disconnected due to the resizing. On the other hand, when it is necessary to finish the exposure mask to a size larger than the pattern size of the semiconductor element to be manufactured, the amount of plus resizing only increases, and there is no problem. Therefore, resizing can be performed for each cell that is a basic unit. In this case, after resizing in cell units, the obtained data can be simply combined and used. Therefore, the amount of data processing can be greatly reduced, and as a result, the data of the exposure mask can be created in a shorter time than the conventional case. Particularly, the effect is great in a semiconductor memory device having many repeating patterns.

[0012]

As is apparent from the above, according to the mask data creating method of the present invention, the layout data is created by first reducing the pattern size of the semiconductor element to be manufactured by a predetermined amount, and then the above-mentioned Since the layout mask is resized in the direction of enlarging to create the exposure mask data, the resizing can be performed for each cell that is a basic unit. Therefore, the amount of data processing can be greatly reduced, and as a result, the data of the exposure mask can be created in a shorter time than the conventional case.

[Brief description of drawings]

FIG. 1 is a diagram illustrating a mask data creation method according to an embodiment of the present invention.

FIG. 2 is a diagram illustrating a conventional mask data creation method.

FIG. 3 is a diagram illustrating a problem of a conventional mask data production method.

[Explanation of symbols]

 1 Pattern of semiconductor element to be produced 2 Layout data 3 Data of exposure mask

Claims (1)

[Claims] 1. A mask which, after creating layout data according to a pattern size of a semiconductor element to be manufactured, resizes the layout data to a size that cancels a pattern shift in an actual process and uses it as exposure mask data. In the method for creating the layout data, the layout data is created by reducing the pattern size of the semiconductor element to be manufactured by a predetermined amount, and the exposure mask data is resized so as to expand the layout data. A method for creating mask data, which is characterized by being created.