JP2000348084A - Data processing method for pattern one-shot electron- beam exposure and pattern one-shot electron-beam exposure system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve shot connection precision and to form a fine pattern with high connection precision by extracting an opening for a pattern one-shot after resizing cells which are expanded into higher cells and ORed. SOLUTION: Pattern one-shot basic cells are segmented by expanding the basic cells for a pattern one-shot to a structure which is one layer above, and performing OR operation and then a resizing process. Cells which are referred to frequently are extracted from CAD data 18 and it is judged whether the extracted cells need to be resized (S27, 28). When the cells need not to be resized (No at S28), the extracted cells are regarded as basic cells 23 for a pattern one-shot, but when the resizing process is necessary (Yes at S28), the cells are expanded to higher cells, which are then ORed (S29). The cells having been ORed are resized as specified (S30) and then basic cells 23 for the pattern one-shot are extracted from the resized cells (S31).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a data processing technique for pattern collective electron beam exposure, and more particularly to a high precision extraction of a pattern collective basic cell at the time of a pattern collective type electron beam exposure and a connection at a joint of a pattern collective shot. The present invention relates to a graphic batch electron beam exposure data processing method and a graphic batch electron beam exposure apparatus for avoiding inconveniences.

[0002]

2. Description of the Related Art With the progress of LSIs (integrated circuit devices), miniaturization of patterns used in semiconductor devices is rapidly progressing. An exposure method using an electron beam is an effective exposure method capable of forming a pattern of 0.25 μm or less which will be required in the future. FIG. 6 is a schematic structural view of a conventional electron beam exposure apparatus. As shown in FIG. 6, the electron beam exposure apparatus includes a first aperture 3 and a plurality of opening patterns 6A to 6A.
This is an apparatus for forming an electron beam 50A into an electron beam 50B having a plurality of patterns with a second aperture 6 provided with E, and irradiating the electron beam 50B on a resist-coated semiconductor wafer 11 to form a fine pattern.

In such an electron beam exposure apparatus, an electron beam 50 emitted from an electron gun 1 is applied to a blanking electrode 2, a first aperture 3, a forming lens 4, a forming deflector 5, a second aperture 6, a reducing lens 7, Main deflector 8, sub deflector 9,
Semiconductor wafer 1 on sample stage 12 through projection lens 10
1 is irradiated. The first aperture 3 has a square opening 3A
Are formed, and a rectangular beam 50A is formed. A plurality of opening patterns 6A to 6E are formed on the second aperture 6.
Are formed in advance as a collective aperture, and are formed through the first aperture 3 into an electron beam 50 shaped into a square.
A is irradiated onto the collective opening on the second aperture 6, and the electron beam 50 B having a plurality of patterns is irradiated on the resist applied on the semiconductor wafer 11 on the sample stage 12, The pattern is transferred at once. Thus, one or a plurality of latent images of a pattern can be formed on the resist by one shot.

The graphic data is stored in a storage device 15 connected to the data bus 13. After the graphic data is read out by the computer 14 to the graphic data memory 17 via the data bus 13, the data is expanded and sorted. Necessary processing is performed. These data are transferred to the blanking electrode 2, the shaping deflector 5, the main deflector 8, and the sub deflector 9 through the control device 16, and a desired position on the semiconductor wafer 11 is irradiated with an electron beam 50B having a desired shape. You. Also, by using the variable shaping opening 6F, the rectangular beam 50A is shaped into a rectangular beam 50C of an arbitrary size, and is irradiated on a resist applied on the semiconductor wafer 11, thereby forming a pattern of an arbitrary size. Can also be formed.

[0005] In such an electron beam exposure apparatus, the number of shots required to draw a similar pattern is larger than that of a variable shaping type electron beam exposure apparatus conventionally used.
It becomes about 1/10 to 1/100. As a result, the time required for performing the electron beam exposure is reduced, and the throughput can be improved. Furthermore, in the figure batch drawing method, the second
Opening 6A of predetermined size on aperture 6
6E, the size of the electron beam 50B after passing through the second aperture 6 is stable, and a pattern with high dimensional accuracy can be obtained.

FIG. 5 is a flow chart for explaining a conventional method of extracting a basic cell for figure collective. Referring to FIG. 5, in the conventional graphic batch drawing method, first, as described above, the second aperture 6 provided with a plurality of opening patterns in advance is used. The basic pattern formed on the second aperture 6 is extracted from the CAD data 18. Then C
A process (step 19) of extracting a figure collective basic cell from the AD data 18 is performed, and if necessary, a resize process (step 22) is performed on the extracted basic cell. The extracted figure collective basic cell 23 is a cell size together with a cell name,
It is registered in the figure batch aperture database 24 that describes the characteristics such as the opening number and the opening ratio. The figure batch aperture 25 (second aperture 6) is created based on the figure batch aperture database 24. At the same time, EB direct drawing data conversion (step 20) using the CAD data 18 as input data is performed to create EB direct drawing pattern data 21. The EB direct drawing pattern data 21 includes two types of data for figure collective and variable shaping. Then, drawing is performed using the EB direct drawing pattern data 21 and the figure batch aperture 25 (second aperture 6) (step 2).
By performing 6), a fine pattern can be formed on the semiconductor wafer 11. At this time, if the method of extracting the figure collective basic cells is inappropriate, the connection accuracy between figure collective shots is reduced. For this reason, the extraction of the figure collective basic pattern must be performed so that the connection accuracy between the figure collective shots is kept high.

As a prior art for solving such a problem, for example, Japanese Patent Laid-Open No. 10-92708 is disclosed.
There is one described in Japanese Patent Publication No. That is, JP-A-10-9
The conventional technique described in Japanese Patent No. 2708 determines that the connection portion of the figure batch shot does not cut the same line width region,
A method of extracting a figure collective basic cell has been determined so that the accuracy is not degraded at the connection between figure collective shots from the D data 18.

[0008]

However, the prior art described in Japanese Patent Application Laid-Open No. 10-92708 has a problem in that when resizing processing is performed, a problem such as cutting of a pattern occurs between graphic batch shots. . The reason is that the resizing process is performed after extracting the figure collective basic cells. FIG. 4 shows a specific example of pattern data used in the conventional embodiment. As shown in FIG. 4, specifically, when the resizing process is applied to the graphic batch exposure method, the CAD data 18 shown in FIG.
After the unit cell A shown in FIG. 4 is extracted, an under-resizing process shown in FIG. 4C is performed to create a cell A ′, which is used as a collective opening for a figure. As shown in ()), there is a problem that the connection is cut at the connection between the figure batch shots.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and it is an object of the present invention to accurately extract a basic cell for a figure collective at the time of a figure collective electron beam exposure and to connect a figure collective shot connection. Another object of the present invention is to provide a figure batch electron beam exposure data processing method and a figure batch electron beam exposure apparatus for avoiding the above problems.

[0010]

SUMMARY OF THE INVENTION The gist of the present invention is to provide a high-precision extraction of a basic cell for a figure batch at the time of a figure batch type electron beam exposure and to avoid a problem at a joint of a figure batch shot. A method of processing data for pattern collective electron beam exposure, comprising: a first step of extracting cells having a large number of times of reference from CAD data as LSI design data; and resizing the cells extracted in the first step. A second step of determining whether or not processing is required; a third step in which the cell is used as a basic cell for figure batches when the resizing processing is not required; and a higher-level cell in the case where the resizing processing is required. A fourth step of expanding and performing an OR operation;
A fifth step of performing a predetermined resizing process on the cell subjected to the OR operation in the step, and a sixth step of extracting a figure collective basic cell from the cell after the resizing process. And a data processing method for collective electron beam exposure. The gist of the invention described in claim 2 is a step of extracting the figure batch cell by expanding the figure batch basic cell into a structure on one level, performing an OR operation, and then executing the resizing process. 2. The data processing method for figure batch electron beam exposure according to claim 1, wherein The gist of the invention described in claim 3 is that the C
Extracting a cell having a large number of times of reference from the AD data; determining whether or not the cell extracted in the step requires the resize processing; and extracting the cell in the case where the resize processing is unnecessary. Using the obtained cell as the figure collective basic cell, expanding the upper cell when the resizing process is necessary, and performing an OR operation, and executing the predetermined resizing process on the cell after the OR operation And a step of extracting the figure collective basic cells from the cells after the resizing processing. The method according to claim 1 or 2, wherein the figure collective electron beam exposure data processing method comprises the steps of: The gist of the invention described in claim 4 is that
Extracting a cell A from the CAD data as a cell having a large number of times of reference, and performing an OR operation on a cell B which is an upper cell of the cell A when it is determined that under resizing processing is required for the cell A Performing the step of performing cell division at an X pitch and a Y pitch from the cell origin of the cell B; extracting the figure collective basic cell as a unit cell; and using the figure collective basic cell to perform the figure collective aperture. And converting the CAD data to the EB direct drawing pattern data, drawing using the EB direct drawing pattern data and the figure batch aperture, and cutting at the connection between the figure batch shots. 4. The pattern collective electron beam exposure data according to claim 1, further comprising a step of forming a high-precision pattern that is not performed. It resides in the physical way. The gist of the invention described in claim 5 is that the cell having a large number of times of reference is referred to as the C cell.
Extracting a cell A from the AD data, performing an OR operation on the cell B, which is an upper cell of the cell A, when it is determined that an overresizing process is required for the cell A, X pitch and Y from the cell origin
Performing a cell division at a pitch, extracting the figure collective basic cell as a unit cell, forming a figure collective aperture using the figure collective basic cell, and performing EB from the CAD data. A step of performing data conversion to direct drawing pattern data, and drawing using the EB direct drawing pattern data and the figure batch aperture to form a high-precision pattern with no nodes at the connection between figure batch shots. 2. The method according to claim 1, further comprising a forming step.
Or the data processing method for figure batch electron beam exposure described in 2. A gist of the invention according to claim 6 is a figure collective type electron beam exposure apparatus for extracting a figure collective basic cell with high accuracy at the time of figure collective type electron beam exposure and avoiding a problem at a joint of figure collective shots. A first means for extracting a cell having a large number of times of reference from CAD data as LSI design data, and a second means for judging whether resizing processing is necessary for the cell extracted by the first means. Means, the cell is used as the basic cell for the figure collective when the resizing process is not required, and when the resizing process is required, the
A fourth means for performing an R operation, a fifth means for performing a predetermined resizing process on the cell subjected to the OR operation by the fourth means, and a basic cell for figure collective basic cells for the cell after the resizing process. A figure batch type electron beam exposure apparatus has a sixth means for performing extraction. Claim 7
The gist of the invention described in (1) is characterized in that there is means for extracting the figure collective cell by expanding the basic cell for figure collective into a structure on one layer, executing an OR operation, and then performing the resizing process. A collective figure type electron beam exposure apparatus according to claim 6. The gist of the invention according to claim 8 is a means for extracting a cell having a large number of times of reference from the CAD data, and a means for determining whether or not the cell extracted by the means needs the resizing process. Means for using the cell extracted by the means when the resizing process is not required as the basic cell for figure batches, and expanding the data into a higher order cell when the resizing process is required, and performing an OR operation; 8. The graphic according to claim 6, further comprising: means for executing the predetermined resizing process on a cell; and means for extracting the figure collective basic cell from the cell after the resizing process. It is in a batch type electron beam exposure apparatus. The gist of the invention described in claim 9 is that the CAD is used as a cell having a large number of times of reference.
Means for extracting the cell A from the data, means for performing an OR operation on the cell B which is an upper cell of the cell A when it is determined that under resizing processing is required for the cell A, Means for dividing the cell at the X pitch and Y pitch from the origin, means for extracting the figure collective basic cell as a unit cell, and creating a figure collective aperture using the figure collective basic cell;
Data is converted from the data to the EB direct drawing pattern data, and drawing is performed using the EB direct drawing pattern data and the figure batch aperture to form a high-precision pattern that is not cut at the connection between the figure batch shots. The figure collective electron beam exposure apparatus according to any one of claims 6 to 8, further comprising: means. The gist of the invention according to claim 10 is a means for extracting a cell A from the CAD data as a cell having a large number of times of reference,
Means for performing an OR operation on the cell B, which is an upper cell of the cell A, when it is determined that the cell A requires an over-resizing process; and a cell at an X pitch and a Y pitch from the cell origin of the cell B. Means for dividing, and means for extracting the figure collective basic cell as a unit cell,
Means for creating a figure batch aperture using the figure batch basic cell; means for converting the CAD data into EB direct drawing pattern data; and means for forming the EB direct drawing pattern data and the figure batch The figure batch type electron beam exposure apparatus according to claim 6 or 7, further comprising means for performing drawing using an aperture to form a highly accurate pattern having no nodes at a connection portion between figure batch shots. Exist.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The features of each embodiment described below are that a first step of extracting cells having a large number of times of reference from LSI design data (CAD data) and a cell extracted in the first step are described below. On the other hand, a second step of judging whether resizing processing is necessary, a third step in which this cell is used as a basic cell for figure batches when there is no resizing processing, and an expansion in upper cells when there is resizing processing A fourth step of performing an OR (logical sum) operation in the fourth step, a fifth step of performing a predetermined resize process on the cell subjected to the OR (logical sum) operation in the fourth step, and a A sixth step of extracting basic cells for figure batches by using a configuration that operates to extract basic cells for figure batches with high accuracy.
The basic cell for figure collective is expanded into a structure on one level and subjected to an OR (logical sum) operation, then resized, and the figure collective cell is cut out to expand to the upper cell, and the OR (logical Sum) The resizing process is performed on the cell on which the calculation has been performed, and thereafter, a figure collective opening is extracted. Therefore, the shot connection accuracy is improved compared to the conventional method, and a fine pattern can be formed with high connection accuracy. .
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(First Embodiment) FIG. 1 shows a first embodiment of the present invention.
9 is a flowchart for explaining a data processing method for figure batch electron beam exposure according to the embodiment. Referring to FIG. 1, first, cells having a large number of times of reference are extracted from the CAD data 18 (step 27). Then step 27
It is determined whether or not resizing processing is necessary for the cell extracted in step (step 28). If the resizing process is not necessary (No in step 28), the cell extracted in step 27 is set as the figure collective basic cell 23. If the resizing process is required (Yes in step 28), the data is expanded to the upper cell, and an OR (logical sum) operation is performed (step 29).
I do. A predetermined resize process (step 30) is performed on the cell after the OR (logical sum) operation. After that, extraction of the figure collective basic cell 23 is performed on the cell after the resize processing (step 31).

Next, the operation of this embodiment will be described with reference to a specific first embodiment. FIG. 2 is a diagram illustrating a specific example of the pattern data used in the first embodiment. FIG. 2A is a schematic diagram illustrating an example of the CAD data 18. In FIG. 2A, a cell A is a cell having a cell size {Xp, Yp}, and a cell B is a cell A
Pitch Xp, Y pitch Yp, two in the X direction, two in the Y direction
This is a cell in which an array is developed. Referring to FIG. 2, first, as shown in FIG. 2A, a cell A is extracted from the CAD data 18 as a cell having a large number of times of reference. Next, when it is determined that under resizing processing is necessary for the cell A, first, as shown in FIG. 2B, an OR (logical sum) operation is performed on the cell B which is an upper cell of the cell A. afterwards,
As shown in FIG. 2C, the cell is divided at an X pitch Xp and a Y pitch Yp from the cell origin of the cell B, and as shown in FIG. 2D, a unit cell (basic cell for figure batch) is extracted. I do. The figure batch aperture 25 is created using the figure batch basic cell. On the other hand, from CAD data 18 to E
When the data is converted into B (Electron Beam) direct-drawing pattern data 21 and drawing is performed using the direct-drawing data and the figure batch aperture 25, FIG.
As shown in (e), a high-precision pattern that is not cut at the connection between graphic batch shots can be formed.

(Second Embodiment) Next, a second embodiment of the present invention will be described.
An embodiment will be described in detail with reference to the drawings.
The basic flow of the data processing is the same as that of the flowchart shown in FIG. 1 and thus will not be described here, and the operation of the present embodiment will be described using the specific first embodiment. FIG. 3 is a diagram illustrating a specific example of pattern data used in the second embodiment of the present invention. FIG. 3A is a schematic diagram showing an example of the CAD data 18 as in FIG. 2A. The cell A is a cell having a cell size {Xp, Yp}, and the cell B is a cell obtained by developing two cells A in the X direction and two in the Y direction at X pitch Xp and Y pitch Yp. Referring to FIG. 3, first, as a cell whose number of times of reference is large, CAD
Cell A is extracted from data 18. Next, when it is determined that the over-resizing process is necessary for the cell A, first, as shown in FIG. 3B, an OR (logical sum) operation is performed on the cell B which is the upper cell of the cell A. Then, FIG.
As shown in (c), X pitch X from the cell origin of cell B
Cell division is performed at p and Y pitches Yp, and unit cells (figure collective basic cells) are extracted as shown in FIG. The figure batch aperture 25 is created using the figure batch basic cell. On the other hand, EB
Data conversion into the direct drawing pattern data 21 is performed, and drawing is performed using the EB direct drawing pattern data 21 and the figure batch aperture 25, as shown in FIG.
A high-precision pattern with no nodes can be formed at the connection between the figure batch shots. By the above-described method, the basic cell for figure batches can be extracted with high accuracy and the failure of the shot connection portion can be reduced, so that a drawing system with high connection accuracy can be provided. Here, the case where an electron beam is used has been described, but it goes without saying that the present method is also effective when another charged particle beam such as an ion beam is used.

Finally, a technical difference between the present embodiment and the above-described conventional technology will be described. As described above, an object of the present invention is to prevent cutting and overlapping of patterns between figure batch shots when performing resize processing in a figure batch electron beam exposure apparatus. For this purpose, the present invention provides a first step of extracting a cell having a large number of times of reference from LSI design data (CAD data 18), and whether or not a resize process is required for the cell extracted in the first step. A second step of determining;
If there is no resizing process, a third step is to use this cell as a basic cell for figure batches; if there is a resizing process, a fourth step of expanding to upper cells and performing an OR (logical sum) operation; A fifth step of performing a predetermined resizing process on the cell that has undergone the OR (logical sum) operation in the step of; and a sixth step of extracting a figure collective basic cell from the resized cell
Is provided so as to operate so that the figure collective basic cell is extracted with high accuracy. The figure collective basic cell is developed into a structure on one layer, and OR (logical sum) is performed.
It is characterized in that resizing processing is performed after calculation, and a figure collective cell is cut out. This allows
Expanding to the upper cell, performing resizing processing on the cell which performed OR (logical sum) operation, and then extracting the figure batch opening, so that the shot connection accuracy is improved compared to the conventional method, and the high connection accuracy is achieved. There is an effect that a fine pattern can be formed.

The prior art of the present invention is described, for example, in Japanese Patent Application Laid-Open No. 11-92708 (first prior art). However, it is an object of the present invention to extract a batch cell so that no connection occurs in a pattern having the same line width. Even if such extraction is performed, if the resizing process is performed, the cutting and overlapping of the patterns occur between the batch shots. The present application provides a method for preventing this, and has a different purpose and configuration from the first prior art. Further, the present invention has means for expanding a basic cell for figure batches into a structure on one level, performing an OR (logical sum) operation, and then performing resizing processing to cut out a figure collective cell. There is no such means.

As another prior art of the present invention, for example, Japanese Patent Laid-Open No. Hei 10-223508 (second prior art)
There is a thing of the description. An object of the second prior art is to extract a batch cell so that no connection occurs on the element region. Even if such extraction is performed, if the resizing process is performed, the cutting and overlapping of the patterns occur between the batch shots. On the other hand, the present invention provides a method for preventing this, and has a different purpose and configuration from the second prior art.
Further, the present invention has a means for expanding a basic cell for figure batches into a structure on one level, performing an OR (logical sum) operation, and then performing a resize process to cut out a figure batch cell. Has no such means.

Further, as another prior art of the present invention, for example, there is one described in Japanese Patent Application Laid-Open No. H11-40474 (third prior art). The third prior art has a configuration in which, when resizing with a variable shaped shot, a shift is made to the shot origin in order to prevent a shift in one direction. On the other hand, the present invention assumes resizing of the basic cell for figure batches, does not assume resizing of variable shaping, and does not require a shift of the shot origin. different. Further, the present invention expands the basic cell for figure batches into a structure on one level and performs OR (logical sum).
Although there is a means for performing a resizing process after performing an operation to cut out a figure collective cell, the third prior art does not have such a means.

As described above, according to the present embodiment, the shot connection accuracy is improved as compared with the conventional method, and a fine pattern can be formed with high connection accuracy. The reason is that the resizing process is performed on the cells that have been expanded into the upper cells and subjected to the OR (logical sum) operation, and thereafter the figure batch opening is extracted.

It should be noted that the present invention is not limited to the above-described embodiment, and it is clear that each embodiment can be appropriately modified within the scope of the technical idea of the present invention. Further, the number, position, shape, and the like of the constituent members are not limited to the above-described embodiment,
The number, position, shape, and the like suitable for carrying out the present invention can be obtained. In each drawing, the same components are denoted by the same reference numerals.

[0021]

As described above, according to the present invention, the shot connection accuracy is improved as compared with the conventional method, and a fine pattern can be formed with high connection accuracy. The reason is that the resizing process is performed on the cells that have been expanded into the upper cells and subjected to the OR (logical sum) operation, and thereafter the figure batch opening is extracted.

[Brief description of the drawings]

FIG. 1 is a flowchart for explaining a data processing method for graphic batch electron beam exposure according to a first embodiment of the present invention.

FIG. 2 is a diagram illustrating a specific example of pattern data used in the first embodiment.

FIG. 3 is a diagram illustrating a specific example of pattern data used in a second embodiment of the present invention.

FIG. 4 is a specific example of pattern data used in a conventional example.

FIG. 5 is a flowchart for explaining a conventional method of extracting basic cells for figure batches.

FIG. 6 is a schematic structural view of a conventional electron beam exposure apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Electron gun 2 ... Blanking electrode 3 ... 1st aperture 3A ... Opening 4 ... Molding lens 5 ... Molding deflector 6 ... 2nd aperture 6A, 6B, 6C, 6D, 6E, 6F ... Opening pattern 7 ... Reduction lens 8 ... Main deflector 9 ... Sub deflector 10 ... Projection lens 11 ... Semiconductor wafer 12 ... Sample table 13 ... Data bus 14 ... Computer 15 ... Storage device 16 ... Control device 17 ... Graphic data memory 18 ... CAD data 21 ... EB direct Drawing pattern data 23 ... Basic cell for figure batch 24 ... Aperture database for figure batch 25 ... Aperture for figure batch

Claims (10)

[Claims] 1. A figure batch electron beam exposure data processing method for highly accurate extraction of a figure batch basic cell at the time of a figure batch type electron beam exposure and avoiding a problem at a joint portion of a figure batch shot. A first step of extracting a cell having a large number of times of reference from CAD data as design data; a second step of determining whether resizing processing is necessary for the cell extracted in the first step; A third step in which the cell is set as a basic cell for figure batches when resizing is not required, a fourth step in which an OR operation is performed by expanding the cell into an upper cell when the resizing is required, and The method includes a fifth step of performing a predetermined resize process on the cell subjected to the OR operation in the fourth step, and a sixth step of extracting a figure collective basic cell from the cell after the resize process. Data processing method for figure collective electron beam exposure. 2. The method according to claim 1, further comprising a step of extracting said figure collective cell by executing said resizing processing after expanding said figure collective basic cell into a structure on one level and executing an OR operation. 2. The data processing method for figure collective electron beam exposure according to 1. A step of extracting a cell having a large number of times of reference from the CAD data; a step of determining whether or not the cell extracted in the step requires the resize processing; and a step of not requiring the resize processing. In this case, the cell extracted in the step is used as the figure collective basic cell, and when the resizing process is required, the cell is expanded into an upper cell to perform an OR operation. 2. The method according to claim 1, further comprising: executing a resizing process; and extracting the figure collective basic cells from the cells after the resizing process.
Or the data processing method for figure batch electron beam exposure according to 2. 4. The method according to claim 1, wherein the cell having a large number of times referred to is the CAD.
Extracting a cell A from the data; and performing an OR operation on a cell B, which is an upper cell of the cell A, when it is determined that under resizing processing is necessary for the cell A.
Performing a calculation; dividing the cell at the X pitch and Y pitch from the cell origin of the cell B; extracting the figure collective basic cell as a unit cell; Creating an aperture for drawing, and converting the CAD data into pattern data for EB direct drawing, drawing using the EB direct drawing pattern data and the figure batch aperture, and connecting portions between figure batch shots. 4. The data processing method for figure batch electron beam exposure according to claim 1, further comprising a step of forming a high-precision pattern that is not cut by the method. 5. The method according to claim 1, wherein the cell having a large number of times referred to is the CAD.
Extracting a cell A from the data; performing an OR operation on the cell B, which is an upper cell of the cell A when it is determined that an over-resizing process is required for the cell A; A step of performing cell division at an X pitch and a Y pitch from a cell origin; a step of extracting the figure collective basic cell as a unit cell; and a step of forming a figure collective aperture using the figure collective basic cell. Performing a data conversion from the CAD data to the EB direct drawing pattern data; performing drawing using the EB direct drawing pattern data and the graphic collective aperture to form a joint at a connection between the graphic collective shots; 3. The data processing method for graphic batch electron beam exposure according to claim 1, further comprising a step of forming a highly accurate pattern without defects. 6. A figure batch type electron beam exposure apparatus for accurately extracting a figure batch basic cell at the time of a figure batch type electron beam exposure and avoiding a problem at a joint of a figure batch shot, comprising: First means for extracting a cell having a large number of times of reference from the CAD data, second means for determining whether or not the cell extracted by the first means needs resizing processing, and resizing processing A third means for using the cell as the basic cell for figure batches when the resizing process is not required, a fourth means for expanding the data to an upper cell and performing an OR operation when the resizing process is required, and the fourth means. A fifth means for performing a predetermined resizing process on the cell subjected to the OR operation by the means, and a sixth means for extracting a figure collective basic cell from the cell after the resizing process. Figure-type electron beam exposure apparatus. 7. The apparatus according to claim 1, further comprising means for expanding said basic cell for figure collective into a structure on one level, executing an OR operation, and executing said resizing processing to cut out a figure collective cell. 7. The figure collective electron beam exposure apparatus according to 6. 8. A means for extracting a cell having a large number of times of reference from the CAD data, a means for judging whether or not the cell extracted by the means needs the resizing processing, and a step for not requiring the resizing processing In this case, the cell extracted by the means is used as the figure collective basic cell, and when the resizing process is necessary, the cell is expanded into an upper cell to perform an OR operation. 7. The apparatus according to claim 6, further comprising: means for executing a resizing process; and means for extracting the figure collective basic cell from the cell after the resizing process.
Or a collective figure type electron beam exposure apparatus according to 7. 9. The method according to claim 9, wherein the cell having a large number of times referred to is the CAD.
Means for extracting the cell A from the data; and when it is determined that the cell A needs to be under resized, OR is performed on the cell B which is a higher cell of the cell A.
Means for performing calculations; means for performing cell division at X pitch and Y pitch from the cell origin of the cell B; extracting the basic cell for figure batch as a unit cell; Means for creating an aperture for drawing, a data conversion from the CAD data to pattern data for EB direct drawing, drawing using the EB direct drawing pattern data and the figure batch aperture, and a connection portion between figure batch shots 9. A collective figure type electron beam exposure apparatus according to claim 6, further comprising means for forming a high-precision pattern which is not cut by the method. 10. A cell having a large number of times referred to by the CA
Means for extracting the cell A from the D data; means for performing an OR operation on the cell B which is an upper cell of the cell A when it is determined that the cell A requires over-resizing processing; Means for dividing the cell from the cell origin at X pitch and Y pitch, means for extracting the figure collective basic cell as a unit cell, and creating a figure collective aperture using the figure collective basic cell. Means for performing data conversion from the CAD data to the EB direct drawing pattern data; and performing drawing using the EB direct drawing pattern data and the figure batch aperture to connect at a connection between figure batch shots. 8. The figure collective electron beam exposure apparatus according to claim 6, further comprising means for forming a highly accurate pattern having no nodes.