JPH0686012A - Reader - Google Patents

Reader

Info

Publication number
JPH0686012A
JPH0686012A JP4232240A JP23224092A JPH0686012A JP H0686012 A JPH0686012 A JP H0686012A JP 4232240 A JP4232240 A JP 4232240A JP 23224092 A JP23224092 A JP 23224092A JP H0686012 A JPH0686012 A JP H0686012A
Authority
JP
Japan
Prior art keywords
light
semiconductor chips
transmissive resin
light transmissive
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4232240A
Other languages
Japanese (ja)
Other versions
JP3046681B2 (en
Inventor
Hiroyuki Okushiba
浩之 奥芝
Yoshinori Morita
啓徳 森田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP4232240A priority Critical patent/JP3046681B2/en
Publication of JPH0686012A publication Critical patent/JPH0686012A/en
Application granted granted Critical
Publication of JP3046681B2 publication Critical patent/JP3046681B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
  • Facsimile Scanning Arrangements (AREA)

Abstract

PURPOSE:To provide a high quality picture signal and to provide a reader with high reliability by forming light transmissive resin provided with prescribed film thickness on the surfaces of a circuit board and respective semiconductor chips. CONSTITUTION:The light transmissive resin 22 such as silicone resin, epoxy resin and polyether amide is formed with the film thickness T less than approximately 100mum on the surfaces of the circuit board 15 and the semiconductor chips 20 provided with a prescribed height B for deterioration prevention and environmental resistance measures. Consequently, without being affected by the gaps between the semiconductor chips 20, the surface of the light transmissive resin 22 is flatened and especially, optical defects are prevented from being generated on the light transmissive resin 22 on the semiconductor chips 20. Thus, the scatter and the attenuation of light at the light transmissive resin 22 are reduced and read sensitivity and the picture resolution of MTF or the like are improved. Also, since the uneveness of the surface is eliminated, the distortion of pictures and sensitivity dispersion can be suppressed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ファクシミリ装置やコ
ンピュータの画像入力用イメージスキャナ装置などに用
いられる原稿密着型の読取装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an original contact type reading apparatus used in a facsimile apparatus or an image scanner apparatus for inputting images in a computer.

【0002】[0002]

【従来の技術】図6(a)は、従来の読取装置の一例の
構成を示す部分斜視図である。この読取装置は、原稿6
0を斜め方向から照明するための光源62と、原稿60
からの反射光を結像して原稿像を形成するためのロッド
レンズアレイ61と、該原稿像を受光するための多数の
光電変換素子から成る受光面71を有する複数の半導体
チップ70と、半導体チップ70が固定される回路基板
65などから構成されており、原稿60を1走査線ずつ
ステップ搬送しながら、各半導体チップ70の各光電変
換素子を順次走査することによって、読取信号が時系列
的に出力される。
2. Description of the Related Art FIG. 6A is a partial perspective view showing the structure of an example of a conventional reading device. This reading device
A light source 62 for illuminating 0 from an oblique direction, and a document 60.
A rod lens array 61 for forming reflected light from the image forming an original image, a plurality of semiconductor chips 70 having a light receiving surface 71 formed of a large number of photoelectric conversion elements for receiving the original image, and a semiconductor The semiconductor chip 70 is composed of a circuit board 65 to which the chip 70 is fixed, and the photoelectric conversion elements of the respective semiconductor chips 70 are sequentially scanned while the original 60 is stepwise conveyed by one scanning line. Is output to.

【0003】図6(b)は、図6(a)に示した半導体
チップ70付近の部分断面図である。半導体チップ70
は、図7の部分断面図に示すように、回路基板65の配
線パターン66に対して、Au線、Al線などのボンデ
ィングワイヤ67によって電気的に接続されており、さ
らに半導体チップ70および回路基板65の表面には、
劣化防止や耐環境対策のために、膜厚約0.5mm〜約
1mm程度となるようにシリコーン樹脂などの光透過性
樹脂72が形成されている。なお、配線パターン66の
両側は、SiO2 、SiNなどの保護膜68が形成され
ているため、この部分の経時劣化は少なくなる。一方、
光透過性樹脂72が存在しない場合は、配線パターン6
6が腐食してボンディングワイヤ67がはずれ、接続不
良を招くおそれがある。
FIG. 6B is a partial cross-sectional view of the vicinity of the semiconductor chip 70 shown in FIG. Semiconductor chip 70
Are electrically connected to the wiring pattern 66 of the circuit board 65 by bonding wires 67 such as Au wires and Al wires, as shown in the partial cross-sectional view of FIG. On the surface of 65,
For prevention of deterioration and environmental resistance, a light transmissive resin 72 such as a silicone resin is formed so as to have a film thickness of about 0.5 mm to about 1 mm. Since the protective films 68 of SiO 2 , SiN or the like are formed on both sides of the wiring pattern 66, deterioration with time in this portion is reduced. on the other hand,
When the light-transmissive resin 72 does not exist, the wiring pattern 6
6 may corrode and the bonding wire 67 may come off, resulting in a defective connection.

【0004】また、図6(a)に示す読取装置では、ロ
ッドレンズアレイ61を用いて原稿を結像しているた
め、その原稿像は正立等倍像となり、原稿像をもれなく
受光するためには、各半導体チップ70同士がほぼ密着
するように近接している。そのため、半導体チップ70
同士の隙間の影響が、光透過性樹脂72の表面に現れ
ず、光学的欠陥の少ない光透過性樹脂72を形成するこ
とが可能である。
Further, in the reading apparatus shown in FIG. 6A, since the original image is formed by using the rod lens array 61, the original image becomes an erecting equal-magnification image and the original image is received without omission. Are close to each other so that the semiconductor chips 70 are almost in close contact with each other. Therefore, the semiconductor chip 70
The effect of the gap between them does not appear on the surface of the light-transmissive resin 72, and it is possible to form the light-transmissive resin 72 with few optical defects.

【0005】[0005]

【発明が解決しようとする課題】図6(a)に示す従来
の読取装置の低コスト化および高性能化を図るために、
ロッドレンズアレイ61の代わりに複数のレンズを用い
て、原稿を複数の領域に区分して結像し、その倒立縮小
像を複数の半導体チップで受光するようにした読取装置
が研究されている。このような読取装置においては、原
稿が縮小倍率で結像するため、図8の部分断面図に示す
ように、半導体チップ70の寸法が小さくなるため、半
導体チップ70および回路基板65の表面に厚さA0.
5mm〜1mm程度の光透過性樹脂72を形成する場
合、半導体チップ70間の隙間が従来と比べて大きくな
り、光透過性樹脂72の表面が平坦でなくなるという課
題がある。
In order to reduce the cost and improve the performance of the conventional reader shown in FIG. 6 (a),
A reader has been studied in which a plurality of lenses are used instead of the rod lens array 61 to divide an image of a document into a plurality of regions to form an image, and the inverted reduced image is received by a plurality of semiconductor chips. In such a reading apparatus, since the original image is formed at a reduction magnification, the dimensions of the semiconductor chip 70 are reduced as shown in the partial cross-sectional view of FIG. A0.
When forming the light transmissive resin 72 of about 5 mm to 1 mm, there is a problem that the gap between the semiconductor chips 70 becomes larger than the conventional one, and the surface of the light transmissive resin 72 becomes uneven.

【0006】そのため、光透過性樹脂72の表面での光
の散乱や減衰が多くなり、読取感度の低下およびMTF
(Modulation Transfer Function)に代表される画像分
解能の劣化を招くという課題がある。さらに、光透過性
樹脂72の表面の凹凸に起因して、そのレンズ効果によ
る光の収束や発散が生じて、画像歪みや感度ばらつきを
招くという課題がある。
Therefore, light scattering and attenuation on the surface of the light transmissive resin 72 increase, which lowers the reading sensitivity and increases the MTF.
(Modulation Transfer Function) has a problem of causing deterioration of image resolution. Further, there is a problem in that due to the unevenness of the surface of the light-transmissive resin 72, light is converged or diverged due to the lens effect, which causes image distortion and sensitivity variation.

【0007】本発明の目的は、前述した課題を解決する
ため、高品質の画像信号を得ることができ、しかも信頼
性の高い読取装置を提供することである。
SUMMARY OF THE INVENTION An object of the present invention is to provide a reading device which can obtain a high quality image signal and has high reliability in order to solve the above-mentioned problems.

【0008】[0008]

【課題を解決するための手段】本発明は、原稿を照明す
るための光源と、前記原稿からの反射光を結像して原稿
像を形成するために、所定間隔で直線状に配列された複
数のレンズと、前記原稿像を受光するために、各レンズ
に1対1に対応して直線状に配列された、多数の光電変
換素子を有する複数の半導体チップと、前記半導体チッ
プが固定される回路基板とを備えた読取装置において、
各半導体チップおよび回路基板の表面に、約100μm
以下の膜厚を有する光透過性樹脂が形成されていること
を特徴とする読取装置である。
SUMMARY OF THE INVENTION According to the present invention, a light source for illuminating an original document and linearly arranged at a predetermined interval for forming an image of the original image by forming reflected light from the original document. A plurality of lenses, a plurality of semiconductor chips having a large number of photoelectric conversion elements linearly arranged in one-to-one correspondence with each lens for receiving the original image, and the semiconductor chips are fixed. In a reader equipped with a circuit board
About 100 μm on the surface of each semiconductor chip and circuit board
The reading device is characterized in that a light-transmitting resin having the following film thickness is formed.

【0009】[0009]

【作用】本発明に従えば、原稿像を受光する各半導体チ
ップおよび回路基板の表面に、約100μm以下の膜厚
を有する光透過性樹脂が形成されていることによって、
各半導体チップの上に形成された光透過性樹脂の表面が
平坦になり、画質劣化の要因となる光学的欠陥がきわめ
て少なくなる。
According to the present invention, the light-transmitting resin having a film thickness of about 100 μm or less is formed on the surface of each semiconductor chip and the circuit board for receiving the original image.
The surface of the light-transmitting resin formed on each semiconductor chip becomes flat, and the number of optical defects that cause deterioration in image quality is extremely reduced.

【0010】[0010]

【実施例】図1は、本発明の一実施例である読取装置の
部分斜視図であり、図2はその光軸に沿った部分断面図
である。読取装置は、原稿10を照明するためのLED
(発光ダイオード)や蛍光灯などの光源12と、原稿1
0からの反射光を結像して原稿像を形成するために、所
定間隔で直線状に配列された複数のレンズ11と、該原
稿像を受光するために、各レンズ11に1対1に対応す
るように直線状に配列された、多数の光電変換素子から
成る受光面21を有する複数の半導体チップ20と、半
導体チップ20が固定された回路基板15などから構成
されている。
1 is a partial perspective view of a reading apparatus according to an embodiment of the present invention, and FIG. 2 is a partial sectional view taken along the optical axis thereof. The reading device is an LED for illuminating the document 10.
(Light emitting diode), a light source 12 such as a fluorescent lamp, and the original 1
A plurality of lenses 11 linearly arranged at a predetermined interval for forming reflected light from 0 to form a document image, and one lens for each lens 11 for receiving the document image. It is composed of a plurality of semiconductor chips 20 each having a light receiving surface 21 composed of a large number of photoelectric conversion elements, which are linearly arranged correspondingly, a circuit board 15 to which the semiconductor chips 20 are fixed, and the like.

【0011】光源12から射出された光は、原稿10に
対して斜め方向から照明するとともに、原稿10からの
反射光は各レンズ11によってその複数のブロックA〜
E毎に結像され、各ブロックA〜Eに対応して半導体チ
ップ20に設けられた複数の光電変換素子を順次走査す
ることによって、原稿10の画像情報に対応した読取信
号が時系列的に出力される。なお、レンズ11を保持す
る筐体13には、迷光や外乱光を防止するため、各レン
ズ11の間に遮光板13aが形成されている。
The light emitted from the light source 12 illuminates the original 10 in an oblique direction, and the light reflected from the original 10 is reflected by each lens 11 into a plurality of blocks A to.
The read signals corresponding to the image information of the original 10 are time-sequentially formed by sequentially scanning a plurality of photoelectric conversion elements provided on the semiconductor chip 20 corresponding to the blocks A to E, which are imaged for each E. Is output. It should be noted that the housing 13 that holds the lenses 11 is provided with a light blocking plate 13 a between the lenses 11 in order to prevent stray light and ambient light.

【0012】図3は、半導体チップ20が回路基板15
に固定された状態を示す部分平面図である。半導体チッ
プ20は、フォトダイオードやフォトトランジスタなど
の64個の光電変換素子P1〜P64から成る受光面2
1と、走査開始信号が入力される端子SI、走査クロッ
ク信号が入力される端子CLK、電源が接続される端子
VDD、グランド端子GND、読取信号を出力する端子
SIG、アナログ回路用のグランド端子AGND、およ
び走査終了信号を出力する端子SOを有し、これらの各
端子は、回路基板15に形成された配線パターン16に
対してボンディングワイヤ17で電気的に接続されてい
る。
In FIG. 3, the semiconductor chip 20 is the circuit board 15
FIG. 3 is a partial plan view showing a state in which it is fixed to. The semiconductor chip 20 includes a light receiving surface 2 including 64 photoelectric conversion elements P1 to P64 such as photodiodes and phototransistors.
1, a terminal SI to which a scanning start signal is input, a terminal CLK to which a scanning clock signal is input, a terminal VDD to which a power source is connected, a ground terminal GND, a terminal SIG for outputting a read signal, and a ground terminal AGND for an analog circuit. , And a terminal SO for outputting a scanning end signal, and these terminals are electrically connected to the wiring pattern 16 formed on the circuit board 15 by bonding wires 17.

【0013】図4は、半導体チップ20付近の部分断面
図である。高さBが約0.4mmである半導体チップ2
0および回路基板15の表面には、劣化防止や耐環境対
策のために、シリコーン樹脂、エポキシ樹脂、ポリエー
テルアミドなどの光透過性樹脂22が、約100μm以
下の膜厚Tで形成されている。その結果、半導体チップ
20間の隙間の影響を受けることなく、光透過性樹脂2
2の表面が平坦になり、特に、半導体チップ20の上の
光透過性樹脂22に光学的欠陥が発生しなくなる。した
がって、光透過性樹脂22での光の散乱や減衰が少なく
なって、読取感度の向上およびMTFなどの画像分解能
が向上する。また、表面の凹凸が少なくなるため、画像
歪みや感度ばらつきを抑制することができる。
FIG. 4 is a partial sectional view of the vicinity of the semiconductor chip 20. Semiconductor chip 2 having a height B of about 0.4 mm
0 and the surface of the circuit board 15 are formed with a light transmissive resin 22 such as a silicone resin, an epoxy resin, or a polyether amide with a film thickness T of about 100 μm or less for the purpose of preventing deterioration and environmental resistance. . As a result, the light-transmitting resin 2 is not affected by the gap between the semiconductor chips 20.
The surface of 2 becomes flat, and in particular, optical defects do not occur in the light transmissive resin 22 on the semiconductor chip 20. Therefore, light scattering and attenuation in the light transmissive resin 22 is reduced, and reading sensitivity is improved and image resolution such as MTF is improved. Further, since the surface irregularities are reduced, it is possible to suppress image distortion and sensitivity variations.

【0014】次に、例としてシリコーン樹脂を用いて、
半導体チップ20および回路基板15の表面に光透過性
樹脂22を形成する方法について具体的に説明する。ま
ず、溶媒としてn−ヘプタンを用いて、シリコーン樹脂
を7重量%の濃度になるよう溶解したところ、粘度が
1.3センチストークス(室温25℃)になった。次
に、溶解したシリコーン樹脂をディスペンサなどで半導
体チップ20の上方から1滴落下させて点滴塗布した
後、加熱槽に投入し温度150℃で約1時間加熱して硬
化させたところ、硬度18(JIS−A)、絶縁破壊電
圧20kV/mmの光透過性樹脂22を形成することが
できた。
Next, using a silicone resin as an example,
A method of forming the light transmissive resin 22 on the surfaces of the semiconductor chip 20 and the circuit board 15 will be specifically described. First, when n-heptane was used as a solvent and the silicone resin was dissolved to a concentration of 7% by weight, the viscosity became 1.3 centistokes (room temperature 25 ° C.). Next, one drop of the melted silicone resin was dropped from above the semiconductor chip 20 with a dispenser or the like to apply drip, and then it was put into a heating tank and heated at a temperature of 150 ° C. for about 1 hour to be cured. According to JIS-A), the light transmissive resin 22 having a dielectric breakdown voltage of 20 kV / mm could be formed.

【0015】得られた光透過性樹脂22の膜厚を干渉膜
厚計で測定したところ、サンプル数n=16で平均膜厚
値x=13.6μm、標準偏差σ=2.1μmという値
が得られ、その透過率は波長λ=550μmで92.7
%となった。
When the film thickness of the obtained light transmissive resin 22 was measured by an interference film thickness meter, the average film thickness value x = 13.6 μm and the standard deviation σ = 2.1 μm were obtained when the sample number n = 16. The obtained transmittance is 92.7 at the wavelength λ = 550 μm.
It became%.

【0016】同様に、膜厚1μmおよび5μm光透過性
樹脂22を形成する場合、シリコーン樹脂の濃度を3重
量%にして、上述と同一条件で点滴塗布し、硬化させ
た。また、膜厚50μmおよび100μmものについて
は、濃度7重量%のシリコーン樹脂を多数回点滴塗布し
た後、硬化させた。なお、比較例として、膜厚0.5m
m、0.8mm、1.0mmのものを形成するために、
溶媒に希釈しない濃度100重量%のシリコーン樹脂を
点滴塗布し、硬化させた。
Similarly, when the light-transmitting resin 22 having a film thickness of 1 μm and 5 μm was formed, the silicone resin concentration was set to 3% by weight, and drip coating was performed under the same conditions as above to cure. For films having a thickness of 50 μm and 100 μm, a silicone resin having a concentration of 7% by weight was drip-coated many times and then cured. As a comparative example, the film thickness is 0.5 m.
m, 0.8 mm, 1.0 mm
A silicone resin having a concentration of 100% by weight which was not diluted with a solvent was drip-coated and cured.

【0017】このようにして得られた、膜厚1μm、5
μm、10μm、50μm、100μm、0.5mm、
0.8mm、1mmの光透過性樹脂22が形成された半
導体チップ20について、空間分解能を表すMTF(Mo
dulation Transfer Function)、および感度ばらつきを
表すPRNU(Photo Response Non-Uniformity)を測
定し、さらに信頼性試験を行った。
Film thicknesses of 1 μm and 5 thus obtained
μm, 10 μm, 50 μm, 100 μm, 0.5 mm,
For the semiconductor chip 20 on which the 0.8 mm and 1 mm light transmissive resin 22 is formed, the MTF (Mo
(dulation transfer function) and PRNU (Photo Response Non-Uniformity) representing the sensitivity variation were measured, and a reliability test was performed.

【0018】なお、MTFは、図5に示すように、矩形
波の白黒の組が、1mm当り4組存在する4LP/mm
の空間周波数における振幅Vを、白地を読取ったときの
振幅Wで除算して100倍した値、すなわち、
As shown in FIG. 5, the MTF has 4 LP / mm in which there are 4 sets of black and white rectangular waves per 1 mm.
A value obtained by dividing the amplitude V at the spatial frequency of by 100 by the amplitude W when the white background is read, that is,

【0019】[0019]

【数1】 [Equation 1]

【0020】という定義式を用いて算出した。なお、M
TFの数値が大きい程、解像度が良いことを示す。
It was calculated using the definition formula In addition, M
The larger the value of TF, the better the resolution.

【0021】また、PRNUは、半導体チップ20の1
個内の感度ばらつきを示す値であり、VMAXを光学濃
度OD値が0.07のコート紙を読取ったときの出力の
最大値とし、VMINを光学濃度OD値が0.07のコ
ート紙を読取ったときの出力の最小値とすると、
PRNU is one of the semiconductor chips 20.
This is a value indicating the variation in sensitivity within each unit. VMAX is the maximum output when a coated paper with an optical density OD value of 0.07 is read, and VMIN is a coated paper with an optical density OD value of 0.07. When the minimum value of the output when

【0022】[0022]

【数2】 [Equation 2]

【0023】という定義式を用いて算出した。なお、P
RNUの数値が小さい程、感度ばらつきが少ないことを
示す。
It was calculated using the definition formula Note that P
The smaller the numerical value of RNU, the smaller the variation in sensitivity.

【0024】また、信頼性試験は、温度85℃、湿度8
5%の雰囲気に500時間放置して加速劣化させ、電極
腐食などの異常発生の有無を調べた。
The reliability test is conducted at a temperature of 85 ° C. and a humidity of 8
It was left to stand in a 5% atmosphere for 500 hours for accelerated deterioration and examined for abnormalities such as electrode corrosion.

【0025】これらの試験結果を次の表1に示す。The results of these tests are shown in Table 1 below.

【0026】[0026]

【表1】 [Table 1]

【0027】以上の結果から、ファクシミリ装置やイメ
ージスキャナ装置に要求される特性が、MTF60%以
上、PRNU10%以下であることを考慮すると、半導
体チップ20の表面に形成する光透過性樹脂22の膜厚
は、約100μm以下が好ましいことが理解される。ま
た、あまり薄いと信頼性が低くなるためその膜厚は約5
μm以上が好ましい。
From the above results, considering that the characteristics required for the facsimile apparatus and the image scanner apparatus are MTF 60% or more and PRNU 10% or less, the film of the light-transmissive resin 22 formed on the surface of the semiconductor chip 20. It is understood that the thickness is preferably about 100 μm or less. Also, if it is too thin, the reliability is low, so the film thickness is about 5
It is preferably at least μm.

【0028】[0028]

【発明の効果】以上詳説したように、本発明によれば、
(1)光透過性樹脂の存在によって、半導体チップの耐
環境性が向上し、特にAl腐食を防止することができ
る。(2)光透過性樹脂の膜厚が従来より薄くなるた
め、光の減衰が少なくなり、読取感度を向上させること
ができる。(3)膜厚の薄い光透過性樹脂を形成する際
には、低粘度の樹脂溶解液を用いるため、半導体チップ
表面での凹凸が自ずと少なくなり、感度ばらつき(PR
NU)が良好となる。(4)光透過性樹脂の膜厚が従来
より薄くなるため、光の散乱による迷光が発生し難くな
り、画像分解能(MTF)が向上する。
As described in detail above, according to the present invention,
(1) The presence of the light-transmissive resin improves the environment resistance of the semiconductor chip and can prevent Al corrosion in particular. (2) Since the film thickness of the light transmissive resin is smaller than that of the conventional one, the attenuation of light is reduced and the reading sensitivity can be improved. (3) Since a low-viscosity resin solution is used when forming a light-transmitting resin having a small film thickness, unevenness on the surface of the semiconductor chip is naturally reduced, and sensitivity variation (PR
NU) becomes good. (4) Since the film thickness of the light-transmitting resin is thinner than in the conventional case, stray light due to light scattering is less likely to occur, and the image resolution (MTF) is improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例である読取装置の部分斜視図
である。
FIG. 1 is a partial perspective view of a reading device according to an embodiment of the present invention.

【図2】図1の光軸に沿った部分断面図である。FIG. 2 is a partial cross-sectional view taken along the optical axis of FIG.

【図3】半導体チップ20が回路基板15に固定された
状態を示す部分平面図である。
FIG. 3 is a partial plan view showing a state in which the semiconductor chip 20 is fixed to the circuit board 15.

【図4】半導体チップ20付近の部分断面図である。FIG. 4 is a partial cross-sectional view near a semiconductor chip 20.

【図5】MTFの定義を示すグラフである。FIG. 5 is a graph showing the definition of MTF.

【図6】図6(a)は従来の読取装置の一例を示す部分
斜視図であり、図6(b)は半導体チップ70付近の部
分断面図である。
FIG. 6A is a partial perspective view showing an example of a conventional reading device, and FIG. 6B is a partial cross-sectional view near a semiconductor chip 70.

【図7】回路基板65の配線パターン66に対するボン
ディングワイヤ67を示す部分断面図である。
FIG. 7 is a partial cross-sectional view showing a bonding wire 67 with respect to a wiring pattern 66 of a circuit board 65.

【図8】従来の読取装置における半導体チップ70上の
光透過性樹脂72を示す部分断面図である。
FIG. 8 is a partial cross-sectional view showing a light-transmissive resin 72 on a semiconductor chip 70 in a conventional reading device.

【符号の説明】[Explanation of symbols]

10 原稿 11 レンズ 12 光源 13 筐体 13a 遮光板 15 回路基板 16 配線パターン 17 ボンディングワイヤ 20 半導体チップ 21 受光面 Reference numeral 10 original document 11 lens 12 light source 13 housing 13a light shielding plate 15 circuit board 16 wiring pattern 17 bonding wire 20 semiconductor chip 21 light receiving surface

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 原稿を照明するための光源と、 前記原稿からの反射光を結像して原稿像を形成するため
に、所定間隔で直線状に配列された複数のレンズと、 前記原稿像を受光するために、各レンズに1対1に対応
して直線状に配列された、多数の光電変換素子を有する
複数の半導体チップと、 前記半導体チップが固定される回路基板とを備えた読取
装置において、 各半導体チップおよび回路基板の表面に、約100μm
以下の膜厚を有する光透過性樹脂が形成されていること
を特徴とする読取装置。
1. A light source for illuminating a document, a plurality of lenses linearly arrayed at predetermined intervals for forming reflected light from the document to form a document image, the document image A plurality of semiconductor chips having a large number of photoelectric conversion elements, which are linearly arranged in a one-to-one correspondence with each lens, and a circuit board to which the semiconductor chips are fixed. In the device, about 100 μm on the surface of each semiconductor chip and circuit board
A reading device, wherein a light-transmitting resin having the following film thickness is formed.
JP4232240A 1992-08-31 1992-08-31 Reader Expired - Fee Related JP3046681B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4232240A JP3046681B2 (en) 1992-08-31 1992-08-31 Reader

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4232240A JP3046681B2 (en) 1992-08-31 1992-08-31 Reader

Publications (2)

Publication Number Publication Date
JPH0686012A true JPH0686012A (en) 1994-03-25
JP3046681B2 JP3046681B2 (en) 2000-05-29

Family

ID=16936171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4232240A Expired - Fee Related JP3046681B2 (en) 1992-08-31 1992-08-31 Reader

Country Status (1)

Country Link
JP (1) JP3046681B2 (en)

Also Published As

Publication number Publication date
JP3046681B2 (en) 2000-05-29

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