JPH0685347A - Magnetic sensor - Google Patents

Magnetic sensor

Info

Publication number
JPH0685347A
JPH0685347A JP4258914A JP25891492A JPH0685347A JP H0685347 A JPH0685347 A JP H0685347A JP 4258914 A JP4258914 A JP 4258914A JP 25891492 A JP25891492 A JP 25891492A JP H0685347 A JPH0685347 A JP H0685347A
Authority
JP
Japan
Prior art keywords
wiring
thin film
lead frame
solder
magnetic sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4258914A
Other languages
Japanese (ja)
Inventor
Shogo Ariyoshi
昭吾 有吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4258914A priority Critical patent/JPH0685347A/en
Publication of JPH0685347A publication Critical patent/JPH0685347A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Abstract

PURPOSE:To stabilize the property of magnetic field detection by arranging the constitution such that it does not convey the stress generated by the warp of a wiring board to the film of a ferromagnetic alloy on an insulating substrate. CONSTITUTION:This sensor comprises an insulating board 1, which has a film 3 of ferromagnetic alloy and a metallic bump 2 on itself, and a wiring board 4, which has a wiring electrode 6 where solder 7 is attached partially. Furthermore a lead frame 12 with a bend 11 is put on the insulating board 1, and one end of it is soldered to the metallic bump 2 on the insulating board 1, and the other end of it is soldered to the wiring electrode on the wiring board 4.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、配線基板上にバンプ
タイプの磁気抵抗素子を持った絶縁基板を表面実装する
磁気センサ装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic sensor device for surface mounting an insulating substrate having a bump type magnetoresistive element on a wiring substrate.

【0002】[0002]

【従来の技術】磁気抵抗素子(MR素子)は磁気を電気
信号に変換するセンサの一種で、ガラス等の基板(絶縁
基板)表面に、例えば強磁性体合金のNi−Co,Ni
−Fe,Ni−Co−Feなどを用いて短冊状のパター
ンを薄膜形成しており、その強磁性体合金の薄膜に磁界
を加えると、抵抗値が変化する現象を呈し、VTR用モ
ータ,自動車,ファクトリー・オートメーションやオフ
ィス・オートメーションなどの分野で広く利用され、構
造はミニモールドタイプが一般的である。
2. Description of the Related Art A magnetoresistive element (MR element) is a type of sensor that converts magnetism into an electric signal. For example, a ferromagnetic alloy such as Ni--Co or Ni is formed on the surface of a substrate (insulating substrate) such as glass.
A strip-shaped pattern is formed into a thin film using -Fe, Ni-Co-Fe, or the like, and when a magnetic field is applied to the thin film of the ferromagnetic alloy, the resistance value changes, which results in a VTR motor, an automobile. , It is widely used in fields such as factory automation and office automation, and the structure is generally a mini mold type.

【0003】また、最近では、パターンの端子部をバン
プ構造として、裸の状態でハイブリッドIC等の配線基
板に直接搭載され、より小型化,低コスト化が図れるよ
うになった。そして、上記バンプ構造にすることによ
り、配線基板の取付精度が向上し、磁界の角度により出
力が微妙に変化する磁気抵抗素子の性質上、大きなメリ
ットとなっている。以下、上記バンプ構造の磁気抵抗素
子を配した配線基板を持った磁気センサ装置を図につい
て説明する。
In addition, recently, the terminal portion of the pattern has a bump structure and is directly mounted on a wiring substrate of a hybrid IC or the like in a bare state, whereby the size and cost can be further reduced. The bump structure improves the mounting accuracy of the wiring board, which is a great advantage in the nature of the magnetoresistive element in which the output slightly changes depending on the angle of the magnetic field. Hereinafter, a magnetic sensor device having a wiring substrate on which the magnetoresistive element having the bump structure is arranged will be described with reference to the drawings.

【0004】図4は従来の磁気センサ装置を示す組立斜
視図であり、図において、1は絶縁基板としてのガラス
基板で、これの上に強磁性体合金の薄膜3が配してあ
る。2はその薄膜3の終端に連設された半田付性のよい
金属(銅等)からなるバンプである。一方、4は配線基
板であり、これの上には配線電極6が上記バンプ2と対
応するように設けてあり、その配線電極6上に、半田7
が予め付着させてある。
FIG. 4 is an assembled perspective view showing a conventional magnetic sensor device. In the figure, reference numeral 1 is a glass substrate as an insulating substrate, on which a thin film 3 of a ferromagnetic alloy is arranged. Reference numeral 2 is a bump made of a metal (copper or the like) having a good solderability and connected to the end of the thin film 3. On the other hand, 4 is a wiring board on which wiring electrodes 6 are provided so as to correspond to the bumps 2, and solder 7 is placed on the wiring electrodes 6.
Has been previously attached.

【0005】次に動作について説明する。まず、図4に
示すようなガラス基板1を裏返し状態にして、半田7に
バンプ2が重なり合うように、配線基板4上に置いた
後、これらを加熱して半田7を溶かす。これにより、磁
気抵抗素子を持ったガラス基板1と配線基板4とが機械
的,電気的に、図6に示すように結合される。
Next, the operation will be described. First, the glass substrate 1 as shown in FIG. 4 is turned over and placed on the wiring substrate 4 so that the bumps 2 overlap the solder 7, and then these are heated to melt the solder 7. As a result, the glass substrate 1 having the magnetoresistive element and the wiring substrate 4 are mechanically and electrically coupled as shown in FIG.

【0006】図7はさらに配線基板4を機械的,環境的
観点から保護するため、この配線基板4を金属や樹脂等
の外装8の上部に接着剤9により取り付けたものを示
し、必要に応じこれらをコーティング用樹脂で被う場合
もある。
FIG. 7 further shows the wiring board 4 attached to the upper portion of an outer casing 8 made of metal, resin or the like with an adhesive 9 in order to protect the wiring board 4 from a mechanical and environmental viewpoint. These may be covered with a coating resin.

【0007】[0007]

【発明が解決しようとする課題】従来の磁気センサ装置
は以上のように構成されているので、周囲温度の変化等
により保護用の外装8が伸縮すると、配線基板4との間
に膨張差が生じ、これにより、配線基板4に反りが生
じ、強磁性体合金の薄膜3も応力を受け、若干の変形が
生じる。このため、薄膜3と磁界との位置ズレが発生し
たり、薄膜3への応力の印加による抵抗値の変化が生じ
たりして、変形前の磁気検出特性との間に大きなズレが
発生するなどの問題点があった。
Since the conventional magnetic sensor device is configured as described above, when the protective case 8 expands or contracts due to a change in ambient temperature or the like, a difference in expansion with the wiring board 4 occurs. As a result, the wiring board 4 is warped, the ferromagnetic alloy thin film 3 is also stressed, and a slight deformation occurs. For this reason, a positional deviation between the thin film 3 and the magnetic field occurs, a resistance value changes due to the application of stress to the thin film 3, and a large deviation occurs from the magnetic detection characteristics before deformation. There was a problem.

【0008】この発明は上記のような問題点を解消する
ためになされたもので、配線基板が周囲温度の変化など
種々の原因で反りを生じても、強磁性体合金の薄膜に上
記反りに伴う応力を伝えないようにでき、その反りを原
因とする磁気抵抗素子の特性変化を招くのを防止できる
磁気センサ装置を得ることを目的とする。
The present invention has been made to solve the above problems, and even if the wiring board warps due to various causes such as a change in ambient temperature, the thin film of the ferromagnetic alloy is not warped. An object of the present invention is to obtain a magnetic sensor device which can prevent the accompanying stress from being transmitted and can prevent the characteristic change of the magnetoresistive element due to the warp.

【0009】[0009]

【課題を解決するための手段】請求項1の発明に係る磁
気センサ装置は、強磁性体合金の薄膜の終端に連設され
た金属バンプを有する絶縁基板および上記金属バンプに
一端が半田付けされたベンド部を有するリードフレーム
を設けて、該リードフレームの他端に対応する位置に半
田が付けられた配線電極を、該半田の溶融により上記リ
ードフレームの他端に配線基板上で結合したものであ
る。
According to a first aspect of the present invention, there is provided a magnetic sensor device having an insulating substrate having metal bumps connected to the ends of a thin film of a ferromagnetic alloy, and one end of which is soldered to the metal bumps. A lead frame having a bent portion is provided, and a wiring electrode soldered to a position corresponding to the other end of the lead frame is joined to the other end of the lead frame on the wiring board by melting the solder. Is.

【0010】[0010]

【作用】この発明における磁気センサ装置は、強磁性体
合金の薄膜を有するガラス基板を、ベンド付きのリード
フレームを介して配線基板に搭載してあるので、配線基
板の反りによる応力を上記ベンド部で吸収させて、上記
薄膜に伝えないようにし、これにより磁界検出特性の信
頼性を向上する。
In the magnetic sensor device according to the present invention, the glass substrate having the thin film of the ferromagnetic alloy is mounted on the wiring substrate via the lead frame with the bend. Therefore, the stress due to the warp of the wiring substrate is applied to the bend portion. Is absorbed in the thin film to prevent it from being transmitted to the thin film, thereby improving the reliability of the magnetic field detection characteristic.

【0011】[0011]

【実施例】実施例1.以下、この発明の一実施例を図に
ついて説明する。図1において、1は絶縁基板としての
ガラス基板で、これの上に強磁性体合金の薄膜3が配し
てある。2はその薄膜3の終端に連設された半田付性の
よい金属(銅等)からなる金属バンプとしてのバンプ
で、この上に図3に示すように半田10を介してベンド
部11を有するリードフレーム12の一端が取り付けら
れている。一方、4は配線基板であり、これの上には配
線電極6が上記バンプ2と対応するように設けてあり、
上記リードフレーム12の他端に対応する位置の配線電
極6上に、半田7が予め付着させてある。なお、リード
フレームの素材は銅など半田とのなじみがよく、ある程
度軟らかい金属が適している。
EXAMPLES Example 1. An embodiment of the present invention will be described below with reference to the drawings. In FIG. 1, reference numeral 1 denotes a glass substrate as an insulating substrate, on which a thin film 3 of a ferromagnetic alloy is arranged. Reference numeral 2 denotes a bump, which is a metal bump made of a metal (copper or the like) having a good solderability, which is connected to the end of the thin film 3 and has a bend portion 11 on the bump 10 via a solder 10 as shown in FIG. One end of the lead frame 12 is attached. On the other hand, 4 is a wiring board on which wiring electrodes 6 are provided so as to correspond to the bumps 2,
Solder 7 is previously attached to the wiring electrode 6 at a position corresponding to the other end of the lead frame 12. The material of the lead frame is well compatible with solder such as copper, and a metal that is soft to some extent is suitable.

【0012】図2はリードフレーム12と配線基板4上
の配線電極6とを半田7にて接続して、配線基板4とガ
ラス基板1とを一体化した状態を示す。なお、この例で
はリードフレーム12に半円状のベンド部11を施した
ものを示したが、薄膜3へ応力を伝えない(吸収する)
形状であれば、上記半円状のベンド部11らに限られ
ず、その他種々の形状を採用できる。
FIG. 2 shows a state in which the lead frame 12 and the wiring electrodes 6 on the wiring substrate 4 are connected by solder 7 to integrate the wiring substrate 4 and the glass substrate 1. Although the lead frame 12 is provided with the semicircular bend portion 11 in this example, stress is not transmitted (absorbed) to the thin film 3.
The shape is not limited to the semicircular bend portion 11 and the like, and various other shapes can be adopted.

【0013】次に動作について説明する。まず、図1に
示すようなガラス基板1を裏返し状態にして、半田7に
リードフレーム12の上記他端が重なり合うように、配
線基板4上に置いた後、これらを加熱して半田7を溶か
す。これにより、磁気抵抗素子を持ったガラス基板1と
配線基板4とが機械的,電気的に図2に示すように結合
される。
Next, the operation will be described. First, the glass substrate 1 as shown in FIG. 1 is turned upside down, placed on the wiring substrate 4 so that the other end of the lead frame 12 overlaps the solder 7, and then these are heated to melt the solder 7. . As a result, the glass substrate 1 having the magnetoresistive element and the wiring substrate 4 are mechanically and electrically coupled as shown in FIG.

【0014】また、周囲温度の変化等により、配線基板
4に反りを生じる場合を考えると、この反りに従ってリ
ードフレーム12のベンド部11およびこれに連続する
部分がたわみ、上記反りによる応力を吸収する。このた
め、磁気抵抗素子を形成する強磁性体合金の薄膜3は上
記応力をほとんど受けず、その結果、磁界検出特性のド
リフトも発生しない。
Considering a case where the wiring board 4 is warped due to a change in ambient temperature or the like, the bend portion 11 of the lead frame 12 and a portion continuous to the bend portion are bent in accordance with the warp, and the stress due to the warp is absorbed. . Therefore, the ferromagnetic alloy thin film 3 forming the magnetoresistive element is hardly subjected to the above stress, and as a result, the drift of the magnetic field detection characteristic does not occur.

【0015】[0015]

【発明の効果】以上のように、この発明によれば、強磁
性体合金の薄膜の終端に連設された金属バンプを有する
絶縁基板および上記金属バンプに一端が半田付けされた
ベンド部を有するリードフレームを設けて、該リードフ
レームの他端に対応する位置に半田が付けられた配線電
極を、該半田の溶融により上記リードフレームの他端に
配線基板上で結合するように構成したので、種々の応力
により配線基板が反っても、その応力をリードフレーム
のベンド部にて吸収させることができ、従って、その反
りが強磁性体合金の薄膜に伝わらないため、磁界以外の
影響による抵抗値変化を招かず、精度のよい磁界検出を
行えるものが得られる効果がある。
As described above, according to the present invention, there is provided an insulating substrate having metal bumps continuously provided at the end of a ferromagnetic alloy thin film, and a bend portion having one end soldered to the metal bump. Since the lead frame is provided and the wiring electrode soldered to the position corresponding to the other end of the lead frame is connected to the other end of the lead frame on the wiring board by melting the solder, Even if the wiring board warps due to various stresses, the stress can be absorbed by the bend part of the lead frame. Therefore, since the warp is not transmitted to the ferromagnetic alloy thin film, the resistance value due to the effects other than the magnetic field There is an effect that a magnetic field can be detected with high accuracy without causing a change.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の一実施例による磁気センサ装置を示
す組立斜視図である。
FIG. 1 is an assembled perspective view showing a magnetic sensor device according to an embodiment of the present invention.

【図2】図1における磁気センサ装置の組立後の状態を
示す斜視図である。
FIG. 2 is a perspective view showing a state after the magnetic sensor device in FIG. 1 is assembled.

【図3】図2における磁気センサ装置を切断して示す断
面図である。
FIG. 3 is a cross-sectional view showing the magnetic sensor device in FIG. 2 by cutting.

【図4】従来の磁気センサ装置を示す組立斜視図であ
る。
FIG. 4 is an assembled perspective view showing a conventional magnetic sensor device.

【図5】図4における磁気センサ装置の組立後の状態を
示す斜視図である。
5 is a perspective view showing a state after the magnetic sensor device in FIG. 4 is assembled.

【図6】図5における磁気センサ装置を切断して示す断
面図である。
6 is a cross-sectional view showing the magnetic sensor device in FIG. 5 by cutting.

【図7】図6における磁気センサ装置に外装を実装した
状態を示す断面図である。
7 is a cross-sectional view showing a state in which an exterior is mounted on the magnetic sensor device in FIG.

【符号の説明】[Explanation of symbols]

1 ガラス基板(絶縁基板) 2 バンプ(金属バンプ) 3 薄膜 4 配線基板 6 配線電極 7 半田 11 ベンド部 12 リードフレーム 1 Glass Substrate (Insulation Substrate) 2 Bump (Metal Bump) 3 Thin Film 4 Wiring Board 6 Wiring Electrode 7 Solder 11 Bend Part 12 Lead Frame

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 磁気抵抗素子を構成する強磁性体合金の
薄膜および該薄膜の終端に連設された金属バンプを有す
る絶縁基板と、上記金属バンプに一端が半田付けされた
ベンド部を有するリードフレームと、該リードフレーム
の他端に対応する位置に半田が付けられた配線電極を有
し、該半田の溶融により上記リードフレームの他端と配
線電極とを接続することにより、上記絶縁基板に一体結
合される配線基板とを備えた磁気センサ装置。
1. A lead having an insulating substrate having a thin film of a ferromagnetic alloy forming a magnetoresistive element and a metal bump connected to the end of the thin film, and a bend portion having one end soldered to the metal bump. The wiring board has a frame and a wiring electrode to which solder is attached at a position corresponding to the other end of the lead frame, and the other end of the lead frame is connected to the wiring electrode by melting the solder, thereby making A magnetic sensor device comprising: a wiring substrate integrally bonded.
JP4258914A 1992-09-03 1992-09-03 Magnetic sensor Pending JPH0685347A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4258914A JPH0685347A (en) 1992-09-03 1992-09-03 Magnetic sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4258914A JPH0685347A (en) 1992-09-03 1992-09-03 Magnetic sensor

Publications (1)

Publication Number Publication Date
JPH0685347A true JPH0685347A (en) 1994-03-25

Family

ID=17326790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4258914A Pending JPH0685347A (en) 1992-09-03 1992-09-03 Magnetic sensor

Country Status (1)

Country Link
JP (1) JPH0685347A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001159542A (en) * 1999-12-03 2001-06-12 Hitachi Metals Ltd Rotation angle sensor and rotation angle sensor unit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6421978A (en) * 1987-07-16 1989-01-25 Fujitsu Ltd Mounting of magnetic detector
JPH02257578A (en) * 1989-03-30 1990-10-18 Toshiba Corp Electronic equipment
JPH03126249A (en) * 1989-10-11 1991-05-29 Toyo Commun Equip Co Ltd Protecting cap for magnetoelectric transducer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6421978A (en) * 1987-07-16 1989-01-25 Fujitsu Ltd Mounting of magnetic detector
JPH02257578A (en) * 1989-03-30 1990-10-18 Toshiba Corp Electronic equipment
JPH03126249A (en) * 1989-10-11 1991-05-29 Toyo Commun Equip Co Ltd Protecting cap for magnetoelectric transducer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001159542A (en) * 1999-12-03 2001-06-12 Hitachi Metals Ltd Rotation angle sensor and rotation angle sensor unit
JP4543350B2 (en) * 1999-12-03 2010-09-15 日立金属株式会社 Rotation angle sensor and rotation angle sensor unit

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