JP4500181B2 - Package for storing semiconductor element and watt hour meter - Google Patents

Description

  The present invention relates to a package for housing a semiconductor element having an external lead terminal and a watt-hour meter having the package for housing a semiconductor element.

  In general, a package for housing a semiconductor element for housing a semiconductor element, particularly a semiconductor sensor element that is easily affected by stress, such as a Hall element, is made of an electrically insulating material such as ceramics as shown in FIG.

  The semiconductor element storage package includes a recess 31a for storing the semiconductor element 33 in a substantially central portion of the upper surface, and an insulating base 31 on which a metallized wiring layer 32 led out from the periphery of the recess 31a to both outer edges of the upper surface is formed, An external lead terminal 34 brazed to the metallized wiring layer 32 via a brazing material such as silver brazing to electrically connect the semiconductor element 33 to an external electric circuit, and a lid 35 made of an electrically insulating material such as ceramics. And is configured.

  This semiconductor storage package is manufactured by the following process. First, the semiconductor element 33 is attached and fixed to the bottom surface of the recess 31a of the insulating base 31 via an adhesive, and each electrode of the semiconductor element 33 is electrically connected to the metallized wiring layer 32 via a bonding wire 36. Thereafter, the lid 35 is joined to the upper surface of the insulating base 31 via a sealing material 37 such as a resin, and the semiconductor element 33 is sealed inside the container composed of the insulating base 31 and the lid 35, thereby obtaining a final product. As a result, a semiconductor device can be obtained.

  In this type of conventional semiconductor device, a through hole is usually formed in a printed wiring board that forms an external electric circuit, and an external lead terminal of a package for housing a semiconductor element is inserted into the through hole and soldered. By electrically connecting the lead terminal and the wiring of the printed wiring board, the semiconductor element accommodated therein is connected to the external electric circuit.

  However, in this type of semiconductor device, the thickness of the semiconductor element storage package is large, and it has not been adapted to the recent surface mounting and thinning.

  Therefore, as a technique for realizing surface mounting and thinning of a semiconductor element storage package, a technique in which an external lead terminal is eliminated is disclosed (Patent Document 1). In this patent document 1, a metal base member is closed under the insulating frame body from which a part of the metallized wiring layer is led out on the bottom surface, and the opening of the insulating frame body is closed, and the lower surface of the metal base member is insulated. The metal cap member is attached to the upper surface of the insulating frame so as not to protrude from the lower surface of the frame so as to block the opening portion of the insulating frame.

  Further, when the external lead terminals are attached to the semiconductor element storage package by brazing, the semiconductor element 43 is mounted before the semiconductor element 43 is mounted on the insulating base 41 as in the aggregate of insulating bases in FIG. In the process, the external lead terminals 44 are attached with the grid-like lead frame 42 attached. As a method for attaching the external lead terminal 44, solder connection performed by a hybrid IC as shown in FIG. 7 is known in addition to the brazing shown in FIG.

The semiconductor element storage package shown in FIG. 7 has an insulating base 51 in which a metallized wiring layer 52 is formed on the entire lower surface, and a semiconductor element 53 is formed at a substantially central portion of the surface of the metallized wiring layer 52. A bonding wire 55 connected to the layer 52, an external lead terminal 54 soldered to the metallized wiring layer 52 to electrically connect the semiconductor element 53 to an external electric circuit, an insulating substrate 51 and a metallized wiring layer 52, A semiconductor element 53, an external lead wire 54, and a resin member 56 for molding the bonding wire 55 are provided.
Japanese Patent Laid-Open No. 5-152460, Item 1, FIG.

  Thus, in the conventional technology, in the surface mounting process, solder is applied in advance to a pad (electrode part) of a printed wiring board that forms an external electric circuit, and a semiconductor device to be mounted is placed on the pad. , Put in a high temperature atmosphere. Then, the solder melts due to the high temperature, and a solder joint between the pad and the terminal of the semiconductor device is formed.

  However, since there is a difference in the coefficient of thermal expansion between ceramic materials and printed wiring board materials such as glass epoxy materials, if external lead terminals are lost in a ceramic element housing package with a large external shape, stress is applied to the solder joints. May cause cracks.

  In order to avoid the occurrence of this crack, it is effective to provide an external lead terminal. However, in a conventional ceramic semiconductor element storage package with an external lead terminal, the external lead terminal must be attached. The soldering is generally performed by brazing, and the external lead terminals are brazed in a state of being attached to the lead frame before the semiconductor element is mounted on the semiconductor element housing package. For this reason, the outer shape becomes large when the semiconductor element storage package is transported or when the semiconductor element is mounted, which is disadvantageous.

  Further, as shown in FIG. 7, in the connection of the external lead terminal 54 by solder performed in the hybrid IC, the semiconductor element 53 is sealed with a resin member 56 such as an epoxy material for the purpose of protecting the semiconductor element at the time of solder dipping. Need to be. In the semiconductor sensor element that is easily affected by the stress such as the Hall element, the stress applied to the semiconductor element 53 by the resin member 56 causes deterioration of characteristics such as an offset voltage, and thus cannot be ignored. In order to avoid stress, when a hollow resin seal is used, it is difficult to realize a thin package.

  The present invention provides a low-cost and thin semiconductor element housing package having a structure in which stress is not applied to a semiconductor element, avoiding the occurrence of cracks in a solder joint in surface mounting, and a watt-hour meter having a semiconductor element housing package There is to do.

In order to achieve the above object, a package for housing a semiconductor element according to claim 1 comprises an insulating substrate having a first recess, a second recess, and a third recess substantially equal to the depth of the second recess , The semiconductor element accommodated in the first recess and the second recess are resin-bonded to the insulating base, and a fourth recess is formed on the side facing the semiconductor element to seal the semiconductor element. A lid, a metallized wiring layer formed on the insulating base and connected to the semiconductor element via a bonding wire, and housed in the third recess and connected to the metallized wiring layer by soldering with a solder layer And an external lead terminal.

  According to a second aspect of the present invention, there is provided a package for housing a semiconductor element in the package for housing a semiconductor element according to the first aspect, wherein the external lead terminal is formed with a lead tip so that it can be soldered to an external circuit board. It is characterized by.

The watt-hour meter of the invention of claim 3 is a watt-hour meter that calculates power based on the current detected by the current detection unit and the voltage detected by the voltage detection unit, wherein the current detection unit includes:
An insulating substrate having a first recess, a second recess, and a third recess; a semiconductor element received in the first recess; and a resin bonded to the insulating substrate received in the second recess; A lid for sealing the element, a metallized wiring layer formed on the insulating base and connected to the semiconductor element via a bonding wire, and housed in the third recess and connected to the metallized wiring layer by soldering And a package for housing a semiconductor element including an external lead terminal.

According to the first aspect of the present invention, by providing the external lead terminal connected to the metallized wiring layer by soldering with a solder layer, it is possible to avoid the occurrence of cracks in the solder joint in the surface mounting of the insulating substrate. Also, by placing the semiconductor element in the hollow portion formed by the insulating base and the lid, stress on the semiconductor element can be avoided, and by sealing the semiconductor element by resin bonding between the insulating base and the lid The bonding of the external lead terminal to the package for housing the semiconductor can be performed as a solder bonding in a post-process that is advantageous in terms of process efficiency. In addition, by providing the insulating substrate with the first to third recesses for storing the semiconductor element, the lid, and the external lead terminals, the thickness of the semiconductor element storage package can be reduced.

  According to the second aspect of the present invention, since the lead tip portion of the external lead terminal is formed, it can be easily soldered to the external circuit board.

  According to the invention of claim 3, the current is detected by the current detection unit using the semiconductor element housing package having the semiconductor element of claim 1, the voltage is detected by the voltage detection unit, and the detected current and voltage are detected. The power can be calculated based on the above.

  Hereinafter, embodiments of a semiconductor element storage package and a watt-hour meter according to the present invention will be described in detail with reference to the drawings.

  1 is a configuration diagram of a package for housing a semiconductor element according to a first embodiment of the present invention. The semiconductor element storage package of the present invention shown in FIG. 1 is made of an electrically insulating material such as ceramics.

  The package for housing a semiconductor element has a first recess 11a for housing the semiconductor element 13 at a substantially central portion of the lower surface thereof, and a second recess 11b having a shallower depth than the first recess 11a provided along the periphery of the first recess 11a. And an insulating substrate 11 formed with a third recess 11c provided at one end of the lower surface, and an electrical insulator such as ceramics that is housed in the second recess 11b and is resin-bonded to the insulating substrate 11 to seal the semiconductor element 13. A lid 15 made of a material, formed on the insulating base 11, connected to the semiconductor element 13 via a bonding wire 16, led out over the outer edge of the lid 15 and the first recess 11a, and insulated from the third recess 11c. The metallized wiring layer 12 connected to the upper surface of the substrate 11 through the through-hole 17 is electrically and mechanically connected to the metallized wiring layer 12 by solder, and one end thereof is connected to the third recess 11c. It is configured to include an external lead terminal 14 to be accommodated.

  This semiconductor storage package is manufactured by the following process. First, the semiconductor element 13 is attached and fixed to the bottom surface of the first recess 11a formed in the insulating base 11 via an adhesive, and each electrode of the semiconductor element 13 is electrically connected to the metallized wiring layer 12 via bonding wires 16. Connect.

  Thereafter, the lid 15 is joined to the second recess 11 b of the insulating base 11 via a sealing material such as a resin, and the semiconductor element 13 is sealed inside the container formed of the insulating base 11 and the lid 15.

  According to this semiconductor storage package, by providing the external lead terminals 14, it is possible to avoid the occurrence of cracks in the solder joints in the surface mounting of the insulating base 11. Further, by providing the first concave portion 11a and the second concave portion 11b in the container inner side central portion of the lid 15, the volume of the hollow portion 18 formed by the insulating base 11 and the lid 15 can be increased by increasing the thickness 19 of the package. It can be realized without increasing. That is, the thickness 19 of the package can be reduced and the occurrence of stress on the semiconductor element 13 can be avoided by the hollow portion 18.

  In addition, by sealing the semiconductor element 13 by resin bonding between the insulating base 11 and the lid 15, the bonding of the external lead terminal 14 to the semiconductor storage package can be achieved by solder bonding in a post-process that is advantageous in terms of process efficiency. can do.

  Further, the external lead terminals 14 are formed into a surface mountable shape to become a semiconductor final product. Since the metallized wiring layer 12 of the external lead terminal 14 and the external printed wiring board are joined by solder, a material having a spring property such as phosphor bronze can be used as the material of the external lead terminal 14, and brazing Compared with materials such as 42 alloy used in the above, forming can be easily performed. For this reason, as shown in FIG. 1, both ends of the external lead wire 14 are formed, one end is housed in the third recess 11c and is electrically connected to the metallized wiring layer 12, and the other end. Is connected to the printed wiring board by solder as the soldering portion 14a. That is, since the one end is housed in the third recess 11c, it is possible to avoid the external lead terminal 14 from interfering with the printed wiring board during surface mounting.

  Moreover, by making the depth of the third recess 11c and the second recess 11b substantially the same size, the number of ceramic layers of the insulating base 11 can be made three, and the manufacturing cost can be reduced.

  FIG. 2 is a diagram showing a manufacturing process of the package for housing a semiconductor element according to the first embodiment of the present invention. First, as shown in FIG. 2 (a), the insulating base 21c of the ceramic semiconductor device housing package is formed as a larger insulating base aggregate 21a.

As shown in FIG. 2A, the aggregate of insulating bases 21a includes a plurality of insulating bases 21c arranged in a row direction and a column direction on a frame 20a. It is partitioned by a perforation 20b in which a groove is formed. In the step shown in FIG. 2A, a semiconductor element mounting process on the insulating base 21c, a bonding wire connecting process, and a semiconductor element sealing process using the lid 22 are performed for each insulating base 21c. By carrying out these processes in a state where the outer shape of the package for housing a semiconductor element to which the tape-like external lead terminal 23b is not connected is small, the efficiency of the process can be improved.

  Next, after the sealing of the semiconductor element by the lid 22 is completed, as shown in FIG. 2B, the insulating base aggregate 21a is insulated along the perforations 20b having the V-grooves in the column direction. The substrate is divided into strip-shaped aggregates 21b. A metallized wiring layer 25 is formed on each of the strip-shaped aggregates 21b of the insulating base.

  Next, the tip of the tape-like external lead terminal 23a formed continuously in a tape shape as shown in FIG. 2C is used as the metallized wiring of the strip-like aggregate 21b of the insulating base shown in FIG. 2B. Contact layer 25.

  Next, as shown in FIG. 2 (d), the tape-shaped external lead terminal 23a and the metallized wiring layer 25 of the strip-shaped aggregate 21b of the insulating base are immersed in a solder bath 24, and the tape-shaped external lead terminal 23a is dipped by solder dipping. The lead terminal 23a and the strip-like aggregate 21b of insulating base are connected by solder.

  Next, as shown in FIG. 2E, the strip-shaped aggregate 21b of the insulating base is divided into insulating bases 21c having tape-like external lead terminals 23b. Further, as shown in FIG. 2 (f), the leading end portion of the tape-like external lead terminal 23 is formed to form the forming lead terminal 23c.

  FIG. 3 is a configuration diagram of a watt hour meter equipped with a package for housing semiconductor elements according to the second embodiment of the present invention. The second embodiment is characterized in that the package for housing a semiconductor element of the first embodiment is mounted on a watt-hour meter.

  The watt-hour meter shown in FIG. 3 includes a current detection unit 60 that detects an input current, a voltage detection unit 70 that detects an input voltage, and a current detected by the current detection unit 60 and a voltage detection unit 70. The power calculation unit 80 calculates power based on the detected voltage, and the display unit 90 displays the power obtained by the power calculation unit.

  The current detection unit 60 is made of a substantially annular magnetic body, and a core 61 having a slight gap 62, a winding 63 wound around the core 61, and a semiconductor element storage package having the semiconductor element 13 are mounted. The semiconductor element 13 is inserted into the gap 13 of the core 61. The semiconductor element 13 is a Hall element.

  In such a configuration, when a current flows through the winding 63, a magnetic field proportional to the flowing current passes through the core 61, and this magnetic field penetrates the Hall element that is the semiconductor element 13 disposed in the gap 62. Therefore, a voltage proportional to the magnetic field is generated at both ends of the Hall element, and this voltage is input to the power calculation unit 80 via the printed circuit board 64.

That is, a current is detected by the current detector 60 using a semiconductor element housing package having a semiconductor element, a voltage is detected by the voltage detector 70, and power is calculated based on the detected current and voltage. it can.

  FIG. 4 is a diagram for explaining the effect of disposing the external lead terminal 14 only at one end of the insulating base 11. 4C and 4D show an example in which the external lead terminal 14 is disposed at one end of the insulating base 11. As shown in FIG. 4C, when the external lead terminal 14 is arranged only at one end, the joining process of the external lead terminal 14 by solder becomes simple. Further, in the current detection unit 60 of the watt-hour meter shown in FIG. 3, a hole 65 is provided in the printed circuit board 64 in order to narrow the gap 62 of the core 61 for the purpose of securing a magnetic field so as to straddle the hole 65. A package for housing a semiconductor element including the insulating base 11 is mounted. As shown in FIG. 4C, when the external lead terminal 14 is arranged only at one end, even if an external force due to the movement of the core 61 due to impact is applied to the semiconductor element storage package, FIG. As shown, the semiconductor element storage package does not fall off the printed circuit board 64.

  On the other hand, as shown in FIG. 4A, when the external lead terminals 14 are disposed at both ends of the insulating base 11 and soldered, all external forces are applied to the solder joints, and FIG. As shown in FIG. 4, the package for housing the semiconductor element falls off. However, as shown in FIG. 4D, if only one side of the insulating substrate 11 is connected, the external lead terminal 14 only needs to be bent.

Industrial application fields

  The present invention can be applied to a watt hour meter or the like equipped with a semiconductor element storage package that stores a semiconductor element such as a Hall element.

It is a block diagram of the package for semiconductor element accommodation of Example 1 of this invention. It is a figure which shows the manufacturing process of the package for semiconductor element accommodation of Example 1 of this invention. It is a block diagram of the watt-hour meter carrying the semiconductor element accommodation package of Example 2 of this invention. It is a figure for demonstrating the effect by arrange | positioning an external lead terminal only to the one end of an insulation base | substrate. It is a block diagram of the conventional package for semiconductor element accommodation. It is a figure which shows the delivery form of the conventional package for semiconductor element accommodation. It is a figure which shows the example of the lead connection by the conventional solder.

Explanation of symbols

11, 21c, 31, 41, 51 Insulating base
11a First recess 11b Second recess 11c Third recess 12, 25, 32, 52 Metallized wiring layers 13, 33, 43, 53 Semiconductor elements 14, 23a, 34, 44, 54 External lead terminals 15, 22, 35 Lid 16, 36, 55 Bonding wire 17 Through-hole 18 Hollow portion 19 Package thickness 20a Frame 20b Perforation 21a Insulation substrate assembly 21b Insulation substrate strip assembly 23b Tape-like external lead terminal 23c Forming lead terminal 24 Solder tank 37 Sealing material 42 Lead frame 56 Resin member 60 Current detection unit 61 Core 62 Gap 63 Winding 64 Printed circuit board 70 Voltage detection unit 80 Power calculation unit 90 Display unit

Claims (3)

An insulating base having a first recess, a second recess, and a third recess substantially equal to the depth of the second recess, a semiconductor element stored in the first recess, and the second recess stored in the second recess. insulating base is a resin bonding, the fourth recess is formed on the side facing the semiconductor element, and a lid member for sealing the semiconductor element, it is formed on the insulating substrate, connected to the semiconductor element via the bonding wire A package for housing a semiconductor element, comprising: a metallized wiring layer that is formed; and an external lead terminal that is housed in the third recess and is connected to the metallized wiring layer by soldering using a solder layer .   2. The package for housing a semiconductor element according to claim 1, wherein said external lead terminal has a lead tip formed so as to be solderable to an external circuit board. In a watt-hour meter that calculates power based on the current detected by the current detector and the voltage detected by the voltage detector,
The current detector is
An insulating substrate having a first recess, a second recess, and a third recess; a semiconductor element received in the first recess; and a resin bonded to the insulating substrate received in the second recess; A lid for sealing the element, a metallized wiring layer formed on the insulating base and connected to the semiconductor element via a bonding wire, and housed in the third recess and connected to the metallized wiring layer by soldering A watt-hour meter comprising a package for housing a semiconductor element including an external lead terminal.

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