JPH0684734A - Semiconductor wafer - Google Patents
Semiconductor waferInfo
- Publication number
- JPH0684734A JPH0684734A JP23671492A JP23671492A JPH0684734A JP H0684734 A JPH0684734 A JP H0684734A JP 23671492 A JP23671492 A JP 23671492A JP 23671492 A JP23671492 A JP 23671492A JP H0684734 A JPH0684734 A JP H0684734A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- semiconductor device
- printing
- area
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置の製造に用
いる半導体ウェーハに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer used for manufacturing a semiconductor device.
【０００２】[0002]
【従来の技術】従来の半導体ウェーハは、数百μｍの厚
さに加工されその片面を半導体装置を形成するため鏡面
に研磨し、もう一方の面（裏面）は、半導体ウェーハ
（以降単にウェーハと称す）の平面度を維持する程度の
表面荒さに仕上げられ両面共に平滑な面である。2. Description of the Related Art A conventional semiconductor wafer is processed to have a thickness of several hundreds of μm, and one surface thereof is mirror-polished to form a semiconductor device, and the other surface (back surface) is a semiconductor wafer (hereinafter simply referred to as a wafer). The surface is smooth enough to maintain the flatness (referred to as) and both surfaces are smooth.
【０００３】近年、半導体装置製造の生産合理化によ
り、ウェーハの認識を自動的に行う目的で、ウェーハ表
面（半導体装置を形成する面）の一部にレーザビームに
よる認識記号を印字する方法が用いられている。In recent years, due to the rationalization of production of semiconductor devices, a method of printing a recognition mark by a laser beam on a part of the wafer surface (the surface on which the semiconductor device is formed) has been used for the purpose of automatically recognizing the wafer. ing.
【０００４】この認識記号は、ＬＳＩのＲＯＭコード切
換えの際の認識等に利用され、ＣＣＤカメラによる画像
処理により認識される。従って、明暗や、輪郭がはっき
りしている必要がある。This recognition symbol is used for recognition when switching the ROM code of the LSI, and is recognized by image processing by the CCD camera. Therefore, it is necessary that the contrast is clear and the contrast is clear.
【０００５】[0005]
【発明が解決しようとする課題】この従来のウェーハで
は、レーザによる印字の際、溶融した物質（シリコンウ
ェーハであれば、シリコンや酸化シリコン等）がウェー
ハ表面に飛散し、半導体装置を破壊するために、極く表
面にレーザビーム跡が残る程度に印字される。そのた
め、たびかさなる処理によって印字がかすれ認識が高い
確度で実行できないという問題点があった。In this conventional wafer, a molten substance (such as silicon or silicon oxide in the case of a silicon wafer) is scattered on the surface of the wafer during printing with a laser, and the semiconductor device is destroyed. In addition, it is printed to such an extent that a laser beam trace remains on the very surface. For this reason, there is a problem in that it is not possible to perform printing recognition with high accuracy due to frequent processing.
【０００６】また、ウェーハ裏面に印字すれば、半導体
装置の破壊は防止できるものの、レーザビームによって
溶融した部分が盛り上がるため（数μｍ）フォトリソグ
ラフィ工程等のウェーハ裏面を吸着固定する場合に、そ
の部分の平面度が悪くなり、パタンがぼけてしまい、半
導体装置が、形成できないといった問題点があった。
（パタン形成の際のマスクパタンのウェーハ表面での結
像の焦点深度が、１μｍ以下のパタンでは、およそ、２
μｍ以下程度であるため。）本発明の目的は、半導体ウ
ェーハの認識に用いるレーザ印字によるウェーハ材の溶
融飛散物による半導体装置の破壊防止、およびウェーハ
裏面への印字の際の平面度悪化を防止できる半導体ウェ
ーハを提供することにある。Further, if the back surface of the wafer is printed, the semiconductor device can be prevented from being destroyed, but the portion melted by the laser beam rises (several μm), so that when the back surface of the wafer is adsorbed and fixed in a photolithography process or the like, that portion is absorbed. However, there is a problem that the semiconductor device cannot be formed because the flatness of the device becomes poor and the pattern is blurred.
(The depth of focus of the image formation of the mask pattern on the wafer surface at the time of pattern formation is about 2 if the depth of focus is 1 μm or less.
Because it is about μm or less. ) An object of the present invention is to provide a semiconductor wafer which can be used for recognition of a semiconductor wafer and can prevent destruction of a semiconductor device due to melted and scattered material of a wafer material by laser printing and prevent deterioration of flatness at the time of printing on the back surface of the wafer. It is in.
【０００７】[0007]
【課題を解決するための手段】本発明のウェーハは、裏
面の一部の領域をくぼませ、その領域をレーザビームに
よる認識記号の印字領域とすることを特徴として構成さ
れる。The wafer of the present invention is characterized in that a partial area of the back surface is recessed and the area is used as a printing area of a recognition symbol by a laser beam.
【０００８】[0008]
【実施例】次に本発明について図面を用いて説明する。
図１は、本発明の一実施例のウェーハの裏面正面図およ
びＡ−Ａ1 部の断面図である。ウェーハのオリエンテー
ションフラット３の領域に任意の深さのくぼみ１はウェ
ーハの加工の際、グラインダーで研磨するか、薬品を用
いたエッチング等により容易に形成できる。また、くぼ
み１の深さは、レーザビームによる印字で盛り上がる高
さに合わせて調整する。半導体装置の製造の最終工程に
至まで、明瞭な印字をするには、１０μｍ程度で良い。
基本的にその領域に対する表面側には、半導体装置を形
成しなけば、余裕を十分にとることができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.
Figure 1 is a cross-sectional view of the back side elevational view of a wafer of an embodiment and A-A 1 part of the present invention. The depression 1 having an arbitrary depth in the area of the orientation flat 3 of the wafer can be easily formed by polishing with a grinder or etching with a chemical when processing the wafer. Further, the depth of the dent 1 is adjusted according to the height that is raised by printing with the laser beam. About 10 μm is required for clear printing even in the final step of manufacturing a semiconductor device.
Basically, if a semiconductor device is not formed on the surface side with respect to the region, a sufficient margin can be secured.
【０００９】図２は、オリエンテーションフラット３の
領域全体をくぼませた実施例であり、加工が簡単で同じ
効果が得られる。FIG. 2 shows an embodiment in which the entire area of the orientation flat 3 is recessed, and the processing is simple and the same effect can be obtained.
【００１０】図３は、実際にくぼみ１を形成する工程
と、レーザー印字で認識記号を記入する工程を、半導体
装置製造工程の概略フローで示したものである。くぼみ
の加工歪を除去したり、表面のキズ等の防止の面から、
くぼみを形成する工程は、ウェーハ加工工程が良い。ま
たレーザー印字は、ＬＳＩのＲＯＭコード切換えの管理
等に一般的に利用され、拡散工程の開始と中間工程で行
われる。FIG. 3 is a flow chart showing the steps of actually forming the depression 1 and the step of writing a recognition symbol by laser printing in a semiconductor device manufacturing process. From the viewpoint of removing processing distortion of dents and preventing surface scratches,
A wafer processing step is preferable for the step of forming the depression. Laser printing is generally used for controlling ROM code switching of LSI, and is performed at the start of the diffusion process and the intermediate process.
【００１１】[0011]
【発明の効果】以上説明したように、本発明は、ウェー
ハの裏面にくぼみ領域を形成し、その部分にレーザー印
字が行えるようにしたので、レーザー印字によるウェー
ハ材の溶融による盛り上がりに対しても、ウェーハ表面
の平面度をそこなうことがなく、半導体装置のパタンく
ずれを防止できる。また裏面利用により、従来、表面へ
の印字を行なうことにより生じるウェーハ材の溶融飛散
物による半導体装置の破壌を防止できるという結果を有
する。As described above, according to the present invention, the recessed area is formed on the back surface of the wafer, and the laser printing can be performed on the recessed area. In addition, the flatness of the wafer surface is not damaged, and the pattern collapse of the semiconductor device can be prevented. Further, by utilizing the back surface, there is a result that it is possible to prevent the damage of the semiconductor device due to the melted and scattered material of the wafer material, which is conventionally caused by performing the printing on the front surface.
【図１】本発明の一実施例のウェーハの裏面要部の正面
図およびＡ−Ａ1 部の断面図である。FIG. 1 is a front view of a main part of a back surface of a wafer according to an embodiment of the present invention and a cross-sectional view of AA 1 part.
【図２】本発明の他の実施例のウェーハの裏面要部の正
面図およびＢ−Ｂ1 部の断面図である。FIG. 2 is a front view of a main part of a back surface of a wafer of another embodiment of the present invention and a cross-sectional view of a BB 1 part.
【図３】本発明の形成工程を示す半導体装置の製造フロ
ー概略図である。FIG. 3 is a schematic manufacturing flow diagram of a semiconductor device showing a forming process of the present invention.
１ くぼみ ２ ウェーハ ３ オリエンテーションフラット 1 dent 2 wafer 3 orientation flat
Claims (1)
一部の領域がくぼんでいることを特徴とする半導体ウェ
ーハ。1. A semiconductor wafer, wherein a part of a surface of a semiconductor device on which a pattern is not formed is recessed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4236714A JP2833936B2 (en) | 1992-09-04 | 1992-09-04 | Laser marking method for semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4236714A JP2833936B2 (en) | 1992-09-04 | 1992-09-04 | Laser marking method for semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0684734A true JPH0684734A (en) | 1994-03-25 |
| JP2833936B2 JP2833936B2 (en) | 1998-12-09 |
Family
ID=17004687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4236714A Expired - Fee Related JP2833936B2 (en) | 1992-09-04 | 1992-09-04 | Laser marking method for semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2833936B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004044630A1 (en) * | 2002-11-13 | 2004-05-27 | Nikon Corporation | Optical multilayer film filter and method of producing the same |
-
1992
- 1992-09-04 JP JP4236714A patent/JP2833936B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004044630A1 (en) * | 2002-11-13 | 2004-05-27 | Nikon Corporation | Optical multilayer film filter and method of producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2833936B2 (en) | 1998-12-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19980825 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |