JP2833936B2 - Laser marking method for semiconductor wafer - Google Patents
Laser marking method for semiconductor waferInfo
- Publication number
- JP2833936B2 JP2833936B2 JP4236714A JP23671492A JP2833936B2 JP 2833936 B2 JP2833936 B2 JP 2833936B2 JP 4236714 A JP4236714 A JP 4236714A JP 23671492 A JP23671492 A JP 23671492A JP 2833936 B2 JP2833936 B2 JP 2833936B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- semiconductor wafer
- printing
- semiconductor device
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置の製造方法
に係り、特に半導体ウェーハのレーザー印字方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device.
In particular, the present invention relates to a laser printing method for a semiconductor wafer .
【０００２】[0002]
【従来の技術】従来の半導体ウェーハは、数百μｍの厚
さに加工されその片面を半導体装置を形成するため鏡面
に研磨し、もう一方の面（裏面）は、半導体ウェーハ
（以降単にウェーハと称す）の平面度を維持する程度の
表面荒さに仕上げられ両面共に平滑な面である。2. Description of the Related Art A conventional semiconductor wafer is processed to a thickness of several hundred μm, and one surface thereof is polished to a mirror surface to form a semiconductor device, and the other surface (back surface) is a semiconductor wafer (hereinafter simply referred to as a wafer). The surface is finished to such a degree as to maintain the flatness of (referred to as)), and both surfaces are smooth surfaces.
【０００３】近年、半導体装置製造の生産合理化によ
り、ウェーハの認識を自動的に行う目的で、ウェーハ表
面（半導体装置を形成する面）の一部にレーザビームに
よる認識記号を印字する方法が用いられている。In recent years, a method of printing a recognition symbol by a laser beam on a part of a wafer surface (a surface on which a semiconductor device is formed) has been used for the purpose of automatically recognizing a wafer due to rationalization of production of semiconductor device manufacturing. ing.
【０００４】この認識記号は、ＬＳＩのＲＯＭコード切
換えの際の認識等に利用され、ＣＣＤカメラによる画像
処理により認識される。従って、明暗や、輪郭がはっき
りしている必要がある。This recognition symbol is used for recognition when switching the ROM code of the LSI, and is recognized by image processing by a CCD camera. Therefore, it is necessary that the contrast is clear and the contour is clear.
【０００５】[0005]
【発明が解決しようとする課題】この従来のウェーハで
は、レーザによる印字の際、溶融した物質（シリコンウ
ェーハであれば、シリコンや酸化シリコン等）がウェー
ハ表面に飛散し、半導体装置を破壊するために、極く表
面にレーザビーム跡が残る程度に印字される。そのた
め、たびかさなる処理によって印字がかすれ認識が高い
確度で実行できないという問題点があった。In this conventional wafer, when printing with a laser, a molten substance (such as silicon or silicon oxide in the case of a silicon wafer) is scattered on the surface of the wafer to destroy the semiconductor device. Then, printing is performed to the extent that a laser beam trace remains on the surface. For this reason, there is a problem in that the printing cannot be performed with a high degree of accuracy in faint printing due to the frequent processing.
【０００６】また、ウェーハ裏面に印字すれば、半導体
装置の破壊は防止できるものの、レーザビームによって
溶融した部分が盛り上がるため（数μｍ）フォトリソグ
ラフィ工程等のウェーハ裏面を吸着固定する場合に、そ
の部分の平面度が悪くなり、パタンがぼけてしまい、半
導体装置が、形成できないといった問題点があった。
（パタン形成の際のマスクパタンのウェーハ表面での結
像の焦点深度が、１μｍ以下のパタンでは、およそ、２
μｍ以下程度であるため。）本発明の目的は、半導体ウ
ェーハの認識に用いるレーザ印字によるウェーハ材の溶
融飛散物による半導体装置の破壊防止、およびウェーハ
裏面への印字の際の平面度悪化を防止できる半導体ウェ
ーハのレーザー印字方法を提供することにある。Further, if printing is performed on the back surface of the wafer, although the destruction of the semiconductor device can be prevented, the portion melted by the laser beam rises (several μm). However, there is a problem that the flatness is deteriorated, the pattern is blurred, and a semiconductor device cannot be formed.
(If the depth of focus of the image of the mask pattern on the wafer surface during pattern formation is 1 μm or less, about 2 μm
Because it is about μm or less. It is an object of the present invention to provide a method for laser marking a semiconductor wafer which can prevent the destruction of a semiconductor device due to a melted and scattered material of a wafer material by laser marking used for recognition of a semiconductor wafer, and can prevent the flatness from being deteriorated when printing on the back surface of the wafer. Is to provide.
【０００７】[0007]
【課題を解決するための手段】本発明の半導体ウェーハ
のレーザー印字方法では、半導体ウェーハの裏面の一部
領域に窪みを形成し、この窪み領域にレーザビームで認
識記号を印字する。ここで、上記窪みの深さは、レーザ
ビームによる半導体ウェーハ面の溶融で盛り上がる高さ
よりも大きくなるように設定される。SUMMARY OF THE INVENTION The semiconductor wafer of the present invention
In the laser printing method, a part of the back side of the semiconductor wafer
A depression is formed in the region, and the depression is recognized by a laser beam.
Print the signature. Here, the depth of the depression is determined by laser
The height of the swell due to the melting of the semiconductor wafer surface by the beam
Is set to be larger than
【０００８】[0008]
【実施例】次に本発明について図面を用いて説明する。
図１は、本発明の一実施例のウェーハの裏面正面図およ
びＡ−Ａ1 部の断面図である。ウェーハのオリエンテー
ションフラット３の領域に任意の深さのくぼみ１はウェ
ーハの加工の際、グラインダーで研磨するか、薬品を用
いたエッチング等により容易に形成できる。また、くぼ
み１の深さは、レーザビームによる印字で盛り上がる高
さに合わせて調整する。半導体装置の製造の最終工程に
至まで、明瞭な印字をするには、１０μｍ程度で良い。
基本的にその領域に対する表面側には、半導体装置を形
成しなけば、余裕を十分にとることができる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.
Figure 1 is a cross-sectional view of the back side elevational view of a wafer of an embodiment and A-A 1 part of the present invention. The depression 1 having an arbitrary depth can be easily formed in the region of the orientation flat 3 of the wafer by polishing with a grinder or etching using a chemical at the time of processing the wafer. Further, the depth of the depression 1 is adjusted according to the height of the swelling by printing with a laser beam. For clear printing up to the final step of the manufacture of the semiconductor device, it may be about 10 μm.
Basically, if a semiconductor device is not formed on the surface side with respect to the region, a sufficient margin can be obtained.
【０００９】図２は、オリエンテーションフラット３の
領域全体をくぼませた実施例であり、加工が簡単で同じ
効果が得られる。FIG. 2 shows an embodiment in which the entire area of the orientation flat 3 is depressed. The processing is simple and the same effect can be obtained.
【００１０】図３は、実際にくぼみ１を形成する工程
と、レーザー印字で認識記号を記入する工程を、半導体
装置製造工程の概略フローで示したものである。くぼみ
の加工歪を除去したり、表面のキズ等の防止の面から、
くぼみを形成する工程は、ウェーハ加工工程が良い。ま
たレーザー印字は、ＬＳＩのＲＯＭコード切換えの管理
等に一般的に利用され、拡散工程の開始と中間工程で行
われる。FIG. 3 is a schematic flow chart of a semiconductor device manufacturing process showing a process of actually forming the depression 1 and a process of writing a recognition symbol by laser printing. In order to remove the processing distortion of the dents and to prevent surface scratches,
The step of forming the depression is preferably a wafer processing step. Laser printing is generally used for management of switching of ROM code of an LSI, and is performed at the start of a diffusion process and at an intermediate process.
【００１１】[0011]
【発明の効果】以上説明したように、本発明は、ウェー
ハの裏面にくぼみ領域を形成し、その部分にレーザー印
字を行うようにしたので、レーザー印字によるウェーハ
材の溶融による盛り上がりに対しても、ウェーハ表面の
平面度をそこなうことがなく、半導体装置のパタンくず
れを防止できる。また裏面利用により、従来、表面への
印字を行なうことにより生じるウェーハ材の溶融飛散物
による半導体装置の破壌を防止できるという結果を有す
る。As described in the foregoing, the present invention forms a recessed area on the rear surface of the wafer. Thus intends line laser printed on that portion, against swelling due to melting of the wafer material by laser printing In addition, the flatness of the wafer surface is not impaired, and the pattern deterioration of the semiconductor device can be prevented. In addition, the use of the back surface has the result that the semiconductor device can be prevented from being broken by the melted and scattered material of the wafer material which is conventionally generated by performing printing on the front surface.
【図１】本発明の一実施例のウェーハの裏面要部の正面
図およびＡ−Ａ1 部の断面図である。1 is a cross-sectional view of a front view and A-A 1 part of the back main portion of the wafer of an embodiment of the present invention.
【図２】本発明の他の実施例のウェーハの裏面要部の正
面図およびＢ−Ｂ1 部の断面図である。FIG. 2 is a front view of a main part of a back surface of a wafer according to another embodiment of the present invention and a cross-sectional view of a BB 1 part.
【図３】本発明の形成工程を示す半導体装置の製造フロ
ー概略図である。FIG. 3 is a schematic diagram of a manufacturing flow of a semiconductor device showing a forming process of the present invention.
１ くぼみ ２ ウェーハ ３ オリエンテーションフラット 1 recess 2 wafer 3 orientation flat
Claims (2)
を形成し、前記窪み領域にレーザビームで認識記号を印
字することを特徴とする半導体ウェーハのレーザー印字
方法。1. A depression in a partial area of a back surface of a semiconductor wafer.
Is formed, and a recognition symbol is marked with a laser beam in the recessed area.
Laser printing on semiconductor wafers
How .
半導体ウェーハ面の溶融で盛り上がる高さよりも大きくLarger than the height of the swelling due to the melting of the semiconductor wafer surface
なっていることを特徴とする請求項１記載の半導体ウェThe semiconductor wafer according to claim 1, wherein
ーハのレーザー印字方法。-Ha laser printing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4236714A JP2833936B2 (en) | 1992-09-04 | 1992-09-04 | Laser marking method for semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4236714A JP2833936B2 (en) | 1992-09-04 | 1992-09-04 | Laser marking method for semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0684734A JPH0684734A (en) | 1994-03-25 |
| JP2833936B2 true JP2833936B2 (en) | 1998-12-09 |
Family
ID=17004687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4236714A Expired - Fee Related JP2833936B2 (en) | 1992-09-04 | 1992-09-04 | Laser marking method for semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2833936B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004163692A (en) * | 2002-11-13 | 2004-06-10 | Nikon Corp | Optical multilayer film filter and its manufacture method |
-
1992
- 1992-09-04 JP JP4236714A patent/JP2833936B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0684734A (en) | 1994-03-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19980825 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |