JPH0684732A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH0684732A JPH0684732A JP23826592A JP23826592A JPH0684732A JP H0684732 A JPH0684732 A JP H0684732A JP 23826592 A JP23826592 A JP 23826592A JP 23826592 A JP23826592 A JP 23826592A JP H0684732 A JPH0684732 A JP H0684732A
- Authority
- JP
- Japan
- Prior art keywords
- chips
- chip
- semiconductor device
- wafer
- defective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、円形状の材料の上に、
四角形の製品を製造するような半導体製造装置の製造方
法に関する。BACKGROUND OF THE INVENTION The present invention relates to a circular material,
The present invention relates to a method for manufacturing a semiconductor manufacturing apparatus that manufactures a rectangular product.
【0002】[0002]
【従来の技術】従来、図2に示すように半導体基板(以
下ウエハ)1上に、半導体装置(以下チップ)2が全面
に形成されていた。この従来の半導体基板1の最外周部
において不完全な形状のチップ2a、2b、2c、・・
・等が発生していた。あるいは、図3に示すようにウエ
ハ1の上に完全な形状のチップ2のみ配置し、このウエ
ハ1の最外周部には不完全な形状のチップ2が形成して
なかった。2. Description of the Related Art Conventionally, as shown in FIG. 2, a semiconductor device (hereinafter referred to as a chip) 2 is formed on an entire surface of a semiconductor substrate (hereinafter referred to as a wafer) 1. Incompletely shaped chips 2a, 2b, 2c, ...
・ There was a problem. Alternatively, as shown in FIG. 3, only the chips 2 having a perfect shape were arranged on the wafer 1, and the chips 2 having an imperfect shape were not formed on the outermost peripheral portion of the wafer 1.
【0003】[0003]
【発明が解決しようとする課題】しかし、従来の半導体
装置の配列方法では、下記の課題があった。まず、図2
に示した従来例においては、不完全な形状のチップの中
で、特に不完全チップ2aのように大多数の素子が含ま
れていて、わずかに不完全な形状となるものが存在す
る。それが、電気的な検査において良品となってしま
い、また、さらに目視等による外観検査においても微小
な形状不良のために見逃し、良品と誤判定してしまうと
いうおそれがあった。However, the conventional semiconductor device arraying method has the following problems. First, FIG.
In the conventional example shown in (1), among imperfectly shaped chips, there are some chips such as imperfect chips 2a which include the majority of elements and have a slightly imperfect shape. There is a risk that it will be a non-defective product in the electrical inspection, and may be overlooked in a visual inspection or the like due to a minute shape defect, and may be erroneously determined as a non-defective product.
【0004】図3に示す従来例においては、外周部にチ
ップを切り出すためのスクライブラインがないため、チ
ップを切り出す際、うまく切れずチップ2に割れやカケ
が入るおそれがあった。また、外周部には溝、絶縁など
の電気的な構造が考慮されていないため、チップを切り
出す前のウエハ状態においてチップ2の良否を検査しよ
うとすると、最外周のチップは、例えば、光照射による
光キャリアのチップ2への流れ込みなどのように外周の
影響を受け、電気的に良否を誤判定してしまうおそれも
あった。In the conventional example shown in FIG. 3, since there is no scribe line for cutting out the chip on the outer peripheral portion, there is a risk that the chip 2 will not be cut well and the chip 2 may be cracked or chipped when the chip is cut out. In addition, since the outer peripheral portion does not consider electrical structures such as grooves and insulation, when the quality of the chip 2 is inspected in a wafer state before cutting the chip, the outermost peripheral chip is exposed to, for example, light irradiation. There is also a possibility that the quality may be electrically erroneously determined due to the influence of the outer periphery such as the flow of the optical carrier into the chip 2 due to the above.
【0005】[0005]
【課題を解決するための手段】上記課題を解決するため
に、本発明はウエハ上にチップを配列するにおいて、完
全な形状となる部分には半導体装置2を、それ以外の領
域にはあらかじめ電気的に不良となるように、かつ、ま
わりの良品であるチップ2に対して悪影響を与えないよ
うに回路設計された、チップ3をウエハ最外周まで配置
する。In order to solve the above problems, according to the present invention, when arranging chips on a wafer, the semiconductor device 2 is preliminarily formed in a portion having a complete shape, and the other areas are electrically pre-formed. The chips 3 are arranged up to the outermost periphery of the wafer, the circuit 3 being designed so as to be defective and not adversely affecting the surrounding good chips 2.
【0006】すなわち、ウエハ1の最外周部にこの模擬
的なチップ3を配置している。That is, the simulated chip 3 is arranged on the outermost peripheral portion of the wafer 1.
【0007】[0007]
【作用】上記のように、配列されたウエハにおいては最
外周部の不完全なチップ3はあらかじめ電気的に不良と
なるように回路設計されているため、良品チップ2との
誤判定もなく、またその周辺へも影響を与えないため、
良品チップ2の電気的誤判定も防止でき、かつ、スクラ
イブラインを全面に配置しているため、ウエハ1をスク
ライブした場合にチップの割れ・カケも防止することが
できる。As described above, in the arrayed wafers, the circuit 3 is designed in advance so that the defective chips 3 at the outermost periphery are electrically defective, so that there is no erroneous determination as a non-defective chip 2. Also, since it does not affect the surrounding area,
The electrical misjudgment of the non-defective chip 2 can be prevented, and since the scribe line is arranged on the entire surface, cracking or chipping of the chip can be prevented when the wafer 1 is scribed.
【0008】[0008]
【実施例】以下に、本発明の実施例を図面を用いて説明
する。図1において、ウエハ1上に完全な形状となるチ
ップの部分に所望の半導体装置(チップ)2を配置す
る。その外周部に電気的に不良となるが、悪影響をまわ
りチップ2に与えないチップ3を配置する。Embodiments of the present invention will be described below with reference to the drawings. In FIG. 1, a desired semiconductor device (chip) 2 is arranged on a wafer 1 on a chip portion having a complete shape. The chip 3 is arranged on the outer periphery of the chip 3 so as to be electrically defective but not adversely affected.
【0009】なお、すべてのチップ2とチップ3の周囲
にはスクライブが施されている。上記不良となるが、悪
影響を与えないチップ3は、例えば最終保護膜工程にお
いて、スクライブラインを除き、開口部を持たないよう
に設計されている。この保護膜工程を終了したのち、チ
ップ2、チップ3の電気特性を検査すると、チップ2の
みは検査することができるけれども、チップ3はスクラ
イブラインを除いて全面が保護膜にて被われているの
で、必ず不良の電気特性となる。It should be noted that all the chips 2 and 3 are scribed around them. The chip 3 which is defective but does not have an adverse effect is designed to have no opening except for the scribe line in the final protective film process, for example. After completing this protective film process, when the electrical characteristics of the chips 2 and 3 are inspected, only the chip 2 can be inspected, but the entire surface of the chip 3 except the scribe line is covered with the protective film. Therefore, the electrical characteristics will always be defective.
【0010】また、チップ2とチップ3のすべてにスク
ライブラインが施されているので、このウエハ1をスク
ライブしたとしてもチップ2に割れは一切生じない。Further, since the scribe lines are provided on all of the chips 2 and 3, even if the wafer 1 is scribed, the chips 2 are not cracked at all.
【0011】[0011]
【発明の効果】本発明は以上説明したように、あらかじ
め不良が予測される部分へ不完全な模擬的なチップを配
置することによって、以下に記載する効果を有する。 不良品チップ3を良品チップ2と誤判定することを
防止することができる。 良品チップ2を不良と誤判定することを防止するこ
とができる。 ウエハ1をスクライブする際のチップ2の物理的損
傷の防止することができる。As described above, the present invention has the following effects by arranging an imperfect simulated chip in a portion where a defect is predicted in advance. It is possible to prevent erroneous determination of the defective chip 3 as the non-defective chip 2. It is possible to prevent the non-defective chip 2 from being erroneously determined to be defective. It is possible to prevent physical damage to the chip 2 when the wafer 1 is scribed.
【図1】本発明に係る半導体基板上の半導体装置の配置
である。FIG. 1 is a layout of a semiconductor device on a semiconductor substrate according to the present invention.
【図2】従来の半導体基板上の半導体装置の配置例
(1)である。FIG. 2 is a layout example (1) of a semiconductor device on a conventional semiconductor substrate.
【図3】従来の半導体基板上の半導体装置の配置例
(2)である。FIG. 3 is a layout example (2) of semiconductor devices on a conventional semiconductor substrate.
1 半導体基板 2 半導体装置 2a、2b、2c 不完全なチップ形状となる半導体装
置 3 模擬的な半導体装置1 Semiconductor Substrate 2 Semiconductor Devices 2a, 2b, 2c Semiconductor Device Having Incomplete Chip Shape 3 Simulated Semiconductor Device
Claims (1)
して、加工・製造する方法において、事前に不良が予想
される部分へは模擬的な半導体装置を配置することを特
徴とする半導体装置の製造方法。1. In a method of arranging a large number of semiconductor devices on a semiconductor substrate and processing / manufacturing the semiconductor device, a simulated semiconductor device is arranged in advance in a portion where a defect is expected. Manufacturing method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23826592A JPH0684732A (en) | 1992-09-07 | 1992-09-07 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23826592A JPH0684732A (en) | 1992-09-07 | 1992-09-07 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0684732A true JPH0684732A (en) | 1994-03-25 |
Family
ID=17027613
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23826592A Pending JPH0684732A (en) | 1992-09-07 | 1992-09-07 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0684732A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011013415A1 (en) | 2009-07-31 | 2011-02-03 | 三菱重工業株式会社 | Control apparatus for number of revolutions of engine and control method for number of revolutions of engine |
-
1992
- 1992-09-07 JP JP23826592A patent/JPH0684732A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011013415A1 (en) | 2009-07-31 | 2011-02-03 | 三菱重工業株式会社 | Control apparatus for number of revolutions of engine and control method for number of revolutions of engine |
US9037385B2 (en) | 2009-07-31 | 2015-05-19 | Mitsubishi Heavy Industries, Ltd. | Engine speed control device and engine speed control method |
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