JPH0682776B2 - Lead frame - Google Patents

Description

The present invention relates to a lead frame used in a semiconductor integrated circuit manufactured by a tape carrier method.

[Conventional technology]

As shown in the plan view of FIG. 5, a conventional lead frame for a tape carrier system has a general electrode lead 2 made of a metal foil such as copper, which is provided in close contact with an insulating film 1 such as a homogeneous tape polyimide, The power supply terminal lead 5 and the ground terminal lead 6 are provided, and the side of each lead connected to the semiconductor element projects into the device hole 3 and its tip 2
The a, 5a and 6a are connected to the protruding electrodes of the semiconductor element 4 by thermocompression bonding. The other end 2b, 5b, 6b of each lead is brought into contact with a probe to measure the electrical characteristics of the semiconductor element 4 or to apply a voltage for aging.

[Problems to be solved by the invention]

During the manufacturing process of a semiconductor integrated circuit, there is an aging test for the purpose of removing an integrated circuit which should cause an initial malfunction in actual use after the assembly process is completed. In the normal aging test, an acceleration test is performed by applying a temperature higher than room temperature and a predetermined voltage to the integrated circuit. After the aging test, an electrical test is performed to select whether the product is good or bad. In this test, there is an item for judging the quality of the transistor characteristics used for the input in the semiconductor element. For example, in a test that measures the reverse current of the base of a transistor, the problem occurs that the reverse current of the base flows that would not flow with a normal transistor.
It is not possible to determine whether the cause is a failure of the semiconductor element itself or whether an abnormal leak path has occurred on the lead frame. Is this Tobral due to semiconductor elements,
As a method of determining whether it is due to the lead frame, a method of performing an aging test using only the semiconductor element or a method of performing an aging test using only the lead frame can be considered. The latter is then suitable for obtaining this result more easily. However, in the conventional lead frame shown in FIG. 5, current cannot flow on the pattern only by itself, that is, in the state where the semiconductor element is not connected, and the cause of the trouble is temporarily in the lead frame. In this case, the lead frame trouble after the aging test cannot be reproduced.

[Means for solving problems]

In contrast to the conventional lead frame described above, the present invention is generally provided in close contact with an insulating film in order to perform an aging test on a single lead frame without connecting a semiconductor element and to find a defect peculiar to the lead frame. Among the leads and the leads for the power supply terminal and the ground terminal, the power supply terminal lead and the ground terminal lead are connected by a thin film resistor provided on the film.

〔Example〕

 Next, the present invention will be described with reference to examples.

FIG. 1 is a plan view of an embodiment of the present invention. In FIG. 1, a large number of general electrode leads 2, power source terminal leads 5, and ground terminal leads 6 are provided in close contact with each other on the insulating film 1, which means that the conventional leads shown in FIG. Similar to the frame. However, in this example, the power supply terminal lead 5 and the ground terminal lead 6 are connected via the metal thin film resistor 7 on the insulating film. When a voltage is applied without connecting a semiconductor element to this lead frame, the metal thin film resistor substitutes for the semiconductor element, and a current equivalent to that when the semiconductor element is connected to the pattern on the insulating film flows, and only the lead frame. Aging test can be performed.

FIG. 2 is a partial plan view of the semiconductor device connected to the lead frame of FIG. When the tip of each lead is connected to the protruding electrode of the semiconductor element 4 located in the device hole 3 of the lead frame, the metal thin film resistor 7 is provided with an isolation hole 10. As a result, the power supply terminal lead 5 and the ground terminal lead 6 are completely separated, and the conventional aging test and electrical test can be performed.

FIG. 3 is a plan view of the second embodiment of the present invention. A part 8 of the lead connecting the metal thin film resistor 7, the power supply terminal lead 5 and the ground terminal lead 6 is made of a material that can be melted by heat, and a hole 9 is made in the insulating film at that portion. In this embodiment, part of the lead 8 of the metal thin film resistor 7 melts down due to heat generated when the semiconductor element 4 and the tip of the lead are thermocompression bonded,
As shown in the plan view of FIG. 4, the power supply terminal lead 5 and the ground terminal lead 6 can be completely separated. Further, a part of the fusible leads 8 of the metal thin film resistor 7 has an advantage that the aging test of only the lead frame can be performed without any problem by using a material that can withstand the temperature during the aging test. . That is, in a lead frame to which a semiconductor element is connected, a current path during an aging test is sought in the semiconductor element to enable an aging test equivalent to that of a conventional lead frame, and at the same time, in a lead frame to which no semiconductor element is connected, a metal thin film This makes it possible to perform an aging test on a single lead frame using resistance as a current path.

〔The invention's effect〕

As described above, according to the present invention, the metal thin film resistor is connected to the semiconductor element by connecting the power supply terminal and the ground terminal on the insulating film through the metal thin film resistor provided on the insulating film in the tape carrier type lead frame. Instead of,
By performing an aging test equivalent to connecting a semiconductor element only with a lead frame, there is an effect that a defect in quality due to the characteristics of the lead frame body can be easily found separately from the semiconductor element.

[Brief description of drawings]

1 is a plan view of a first embodiment of a lead frame of the present invention, FIG. 2 is a partial plan view of a semiconductor device 4 connected to the lead frame of FIG. 1, and FIG. 3 is a lead frame of the present invention. 4 is a plan view of the second embodiment, FIG. 4 is a partial plan view of a semiconductor device connected to the lead frame of FIG. 3, and FIG.
The figure is a plan view of a conventional lead frame. 1 ... Insulating film, 2 ... General lead, 2a ... Lead tip, 2b ... Measurement terminal, 3 ... Device hole,
4 ... Semiconductor element, 5 ... Power terminal lead, 6 ... Ground terminal lead, 7 ... Metal thin film resistor, 8 ... Heat-melting lead, 9 ... Hole, 10 ... Isolation hole.

Claims (1)

[Claims] 1. A lead frame used in a tape carrier method in which electrode leads are provided in close contact with a tape-shaped insulating film, and a metal thin film resistor is provided on the insulating film, and the metal film resistor is provided on the insulating film. A lead frame, wherein the lead used for the power supply terminal and the lead used for the ground terminal are connected via the metal thin film resistor.