JPH0682614B2 - Vapor growth equipment for semiconductors - Google Patents
Vapor growth equipment for semiconductorsInfo
- Publication number
- JPH0682614B2 JPH0682614B2 JP59053707A JP5370784A JPH0682614B2 JP H0682614 B2 JPH0682614 B2 JP H0682614B2 JP 59053707 A JP59053707 A JP 59053707A JP 5370784 A JP5370784 A JP 5370784A JP H0682614 B2 JPH0682614 B2 JP H0682614B2
- Authority
- JP
- Japan
- Prior art keywords
- growth
- gas
- substrate
- reaction tube
- substrate susceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は熱分解法による半導体の気相成長装置に関し、
特に成長反応管内のガスの流れを整形し、あわせて成長
残留物が反応管に管壁付着するのを防止した半導体の気
相成長装置に関する。The present invention relates to a vapor phase growth apparatus for semiconductors by a thermal decomposition method,
In particular, the present invention relates to a semiconductor vapor phase growth apparatus that shapes the gas flow in a growth reaction tube and also prevents growth residues from adhering to the reaction tube wall.
従来、熱分解法による半導体の気相成長には、第１図に
示す装置が用いられている。第１図において、成長原
料、不純物添加用ガスおよび希釈ガスの入り口１をもつ
成長反応管２内の支持台５上に成長基板３を乗せた基板
サセプタ４がセットされる。反応管２は高周波加熱コイ
ル６により加熱され、熱電対７による制御された温度で
気相成長が行われる。ここに送入されたガスは成長領域
を通過後ガス排出孔８より排気される。このような装置
においては、送入口１より入つた成長用ガスは成長基板
３領域で成長温度にまで高くなる。そのため流速は速く
なり高温のまま下流側へ流れる。一方、反応管２の温度
は室温により定まり、管壁近傍のガスはその温度が下が
り、成長領域のガスに大きな温度差が生ずる。この温度
差による密度の相違によつて管内に対流が起こり、成長
領域を通過したガスが基板サセプタ４の上流側へ流れる
ことがある。これらが原因となつて、成長原料濃度は安
定せず、不純物添加濃度の制御を不可能とするばかりで
なく、成長層界面の急峻性は緩慢になる。また管壁に付
着した物が管壁温度変動にしたがつて蒸発し、又逆に塵
状になり、対流と共に基板サセプタ４の上流側へ輸送さ
れて成長基板３に付着してその純度低下、成長表面の凸
凹の原因になるなどの欠点がある。Conventionally, the apparatus shown in FIG. 1 has been used for vapor phase growth of a semiconductor by a thermal decomposition method. In FIG. 1, a substrate susceptor 4 having a growth substrate 3 placed on a support 5 in a growth reaction tube 2 having an inlet 1 for a growth material, an impurity-adding gas and a diluent gas is set. The reaction tube 2 is heated by the high frequency heating coil 6, and vapor phase growth is performed at a temperature controlled by the thermocouple 7. The gas introduced here is exhausted from the gas exhaust hole 8 after passing through the growth region. In such an apparatus, the growth gas entering from the inlet 1 rises to the growth temperature in the growth substrate 3 region. Therefore, the flow velocity becomes faster and the high temperature flows downstream. On the other hand, the temperature of the reaction tube 2 is determined by the room temperature, the temperature of the gas near the tube wall decreases, and a large temperature difference occurs in the gas in the growth region. Due to the difference in density due to this temperature difference, convection occurs in the tube, and the gas passing through the growth region may flow to the upstream side of the substrate susceptor 4. Due to these factors, the concentration of the growth raw material is not stable, making it impossible to control the impurity addition concentration, and the steepness of the growth layer interface becomes slow. Further, the substance attached to the tube wall is evaporated in accordance with the temperature variation of the tube wall, and conversely becomes dusty, is transported to the upstream side of the substrate susceptor 4 along with the convection, and is attached to the growth substrate 3 to reduce its purity. There are drawbacks such as causing irregularities on the growth surface.
本発明は、このような従来の欠点を除去し、成長反応管
内の成長基板下流側のガスの流れを整形した半導体の気
相成長装置を提供することにある。An object of the present invention is to provide a semiconductor vapor phase growth apparatus that eliminates such conventional defects and shapes the gas flow on the downstream side of the growth substrate in the growth reaction tube.
本発明は熱分解法による半導体の気相成長装において、
反応管内の基板サセプタ近傍の下流側に基板サセプタを
通過したガスを冷却する冷却部を備え、しかも基板サセ
プタの上流部にガスの冷却部を有しないことを特徴とす
る半導体の気相成長装置である。The present invention relates to a vapor deposition apparatus for semiconductors by a thermal decomposition method,
A semiconductor vapor phase growth apparatus characterized in that a cooling unit for cooling the gas that has passed through the substrate susceptor is provided on the downstream side in the vicinity of the substrate susceptor in the reaction tube, and that there is no gas cooling unit at the upstream portion of the substrate susceptor. is there.
以下本発明の実施例について図面を参照して詳細に説明
する。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
（実施例１） 第２図は本発明の第１の実施例を示す断面図である。成
長原料、不純物添加用ガスおよび希釈ガスの入口11を有
し、成長反応管12内に設置された支持台15上に成長基板
13を乗せた基板サセプタ14をセツトし、反応管12の周囲
に備えた高周波加熱コイル16を加熱し、熱電対17により
その温度を制御して気相成長を行う点は従来と同じであ
る。また、送入されたガスは成長領域を通過後、ガス排
出孔18より排気される。本実施例では基板サセプタ14近
傍で、その下流側の成長反応管12の周囲に冷却水の入口
19、出口20を持つ配管又は水室からなる冷却部21を装備
し、しかも基板サセプタの上流部にはガスの冷却部を有
しない。(Embodiment 1) FIG. 2 is a sectional view showing a first embodiment of the present invention. A growth substrate is provided on a support base 15 provided in a growth reaction tube 12 having an inlet 11 for a growth raw material, an impurity addition gas and a dilution gas.
The substrate susceptor 14 on which 13 is placed is set, the high-frequency heating coil 16 provided around the reaction tube 12 is heated, and the temperature is controlled by the thermocouple 17 to carry out vapor phase growth as in the conventional case. Further, the introduced gas is exhausted from the gas exhaust hole 18 after passing through the growth region. In this embodiment, in the vicinity of the substrate susceptor 14, the cooling water inlet is provided around the growth reaction tube 12 on the downstream side.
A cooling unit 21 including a pipe or a water chamber having an outlet 20 is provided, and a gas cooling unit is not provided upstream of the substrate susceptor.
本実施例において、冷却部21内に冷却水を送入し、基板
サセプタ14の下流側を反応管12の外側から冷却する。こ
れによつて、基板サセプタ14を通過したガスは急速に冷
却され、また、基板サセプタ14の下流側の反応管12の管
壁の温度を一定温度に冷却される。In this embodiment, cooling water is fed into the cooling unit 21 to cool the downstream side of the substrate susceptor 14 from the outside of the reaction tube 12. As a result, the gas that has passed through the substrate susceptor 14 is rapidly cooled, and the temperature of the tube wall of the reaction tube 12 on the downstream side of the substrate susceptor 14 is cooled to a constant temperature.
この結果、反応管12内のガスの流れを整形することがで
き、また管壁に付着した物が温度変動によつて蒸発、塵
状に変化することがなく、さらに対流によるガスの上流
側への戻りがなくなる。As a result, the flow of the gas in the reaction tube 12 can be shaped, and the substances attached to the tube wall do not evaporate or change to dust due to the temperature change, and further to the upstream side of the gas by convection. No return.
（実施例２） 第３図は本発明の第２の実施例を示す断面図である。成
長原料、不純物添加用ガスおよび希釈ガスの入口22を有
し、成長反応管23内に設置された支持台26上に成長基板
24を乗せた基板サセプタ25をセツトし、反応管23の周囲
に備えた高周波加熱コイル27を加熱し、熱電対28により
温度を制御して気相成長を行う。送入されたガスは成長
領域を通過後、ガス排出孔29より排気される。本実施例
では、基板サセプタ25近傍の下流側の成長反応管23内に
冷却水の入口30、出口31を持つ配管又は水室からなる冷
却部32を設けたものである。(Embodiment 2) FIG. 3 is a sectional view showing a second embodiment of the present invention. A growth substrate is provided on a support table 26 having an inlet 22 for a growth material, an impurity-adding gas, and a dilution gas and installed in a growth reaction tube 23.
The substrate susceptor 25 on which 24 is placed is set, the high frequency heating coil 27 provided around the reaction tube 23 is heated, and the temperature is controlled by the thermocouple 28 to perform vapor phase growth. The introduced gas is exhausted from the gas exhaust hole 29 after passing through the growth region. In this embodiment, a cooling unit 32 is provided in the growth reaction tube 23 near the substrate susceptor 25 on the downstream side, which is composed of a pipe having a cooling water inlet 30 and an outlet 31 or a water chamber.
（実施例３） 第４図は本発明の第３の実施例を示す断面図である。成
長原料、不純物添加用ガスおよび希釈ガスの入口33を有
し、成長反応管34内に設置された支持台37上に成長基板
35を乗せた基板サセプタ36をセツトし、高周波加熱コイ
ル38を加熱し、熱電対39により温度を制御して気相成長
を行なう。送入されたガスは成長領域を通過後ガス排出
孔40より排気される。本実施例は基板サセプタ36近傍の
下流側の成長反応管34内外に冷却水の入口41および42、
出口43および44を有する配管又は水室からなる冷却部45
および46を設置したものである。(Embodiment 3) FIG. 4 is a sectional view showing a third embodiment of the present invention. A growth substrate is provided on a support table 37 having an inlet 33 for a growth material, an impurity-adding gas, and a dilution gas, and installed in a growth reaction tube 34.
The substrate susceptor 36 on which 35 is placed is set, the high frequency heating coil 38 is heated, and the temperature is controlled by the thermocouple 39 to perform vapor phase growth. The introduced gas is exhausted from the gas exhaust hole 40 after passing through the growth region. In this embodiment, cooling water inlets 41 and 42 are provided inside and outside the growth reaction tube 34 on the downstream side near the substrate susceptor 36.
Cooling part 45 consisting of piping or water chamber with outlets 43 and 44
And 46 are installed.
以上、実施例2,3においても冷却部内に冷却水を通して
基板サセプタの下流側を冷却する点は実施例１と同じで
ある。As described above, the second and third embodiments are the same as the first embodiment in that the cooling water is passed through the cooling section to cool the downstream side of the substrate susceptor.
第５図は本発明各実施例に示す装置と第１図に示す従来
の成長装置とを用いて、高抵抗基板にキヤリア濃度（ｎ
＝１×1017cm-3）の不純物を添加した場合の成長層のキ
ヤリア濃度プロフアイルを示す図である。同図中破線が
従来法によるもので、対流によるガスの切り替りが良く
ないため、キヤリア濃度の急峻性は低く、また安定する
までに時間がかかつている。これに比較し実線にて示す
本発明による装置を用いた場合には、対流が少ないため
ガスの切り替りが良くなり、キヤリア濃度の急峻性も高
く、安定するまでの時間が短かく、また表面に塵状の付
着物が出ず、成長表面の凸凹の発生を少くなくすること
ができた。FIG. 5 shows the carrier concentration (n) on a high resistance substrate using the apparatus shown in each embodiment of the present invention and the conventional growth apparatus shown in FIG.
FIG. 4 is a diagram showing a carrier concentration profile of a growth layer when an impurity of = 1 × 10 17 cm −3 ) is added. The dashed line in the figure is due to the conventional method, and because the gas switching due to convection is not good, the steepness of the carrier concentration is low and it takes time to stabilize. In comparison with this, when the device according to the present invention shown by the solid line is used, gas switching is improved because convection is small, the steepness of the carrier concentration is high, the time until stabilization is short, and the surface No dust-like deposits appeared on the surface, and the occurrence of irregularities on the growth surface could be minimized.
したがつて、本発明によるときには純度が高い高品質の
半導体製品を得ることができる効果を有するものであ
る。Therefore, according to the present invention, it is possible to obtain a high-quality semiconductor product having high purity.
第１図は従来の熱分解法による気相成長装置の断面図、
第2,3および４図はそれぞれ本発明の実施例の熱分解法
による気相成長装置の断面図、第５図は従来法の装置と
本発明の方法の装置により成長層にキヤリア濃度（ｎ＝
１×1017cm-3）の不純物添加による効果を示す図で、成
長層中のキヤリア濃度の変化を示し、破線を従来の方法
による装置、実線を本発明による装置について比較して
示した。 12,23および34は成長反応管、13,24および35は成長基
板、14,25および36は基板サセプタ、15,26および37は基
板サセプタの支持台、16,27および38は成長基板の温度
を定める高周波加熱用コイル、17,28および39は成長基
板の温度を検出する熱電対、18,29および40は成長反応
管内のガスの排出孔、21,32,45,46は冷却部、30,41およ
び42は冷却部の冷却水の入口、20,31,43および44は冷却
部の冷却水の出口。FIG. 1 is a sectional view of a conventional vapor phase growth apparatus by a thermal decomposition method,
2, 3 and 4 are cross-sectional views of a vapor phase growth apparatus by a pyrolysis method according to an embodiment of the present invention, and FIG. 5 is a carrier concentration (n) in a growth layer obtained by a conventional method apparatus and an apparatus of the present invention. =
In the figure showing the effect of the impurity addition of 1 × 10 17 cm −3 ), the change of the carrier concentration in the growth layer is shown, the broken line shows the device by the conventional method, and the solid line shows the device by the present invention in comparison. 12,23 and 34 are growth reaction tubes, 13,24 and 35 are growth substrates, 14,25 and 36 are substrate susceptors, 15,26 and 37 are substrate susceptor supports, and 16,27 and 38 are growth substrate temperatures. , 28 and 39 are thermocouples for detecting the temperature of the growth substrate, 18, 29 and 40 are gas discharge holes in the growth reaction tube, 21, 32, 45 and 46 are cooling parts, 30 , 41 and 42 are cooling water inlets of the cooling unit, and 20, 31, 43 and 44 are cooling water outlets of the cooling unit.
Claims (1)
いて、反応管内の基板サセプタ近傍の下流側に、基板サ
セプタを通過したガスを冷却する冷却部を備え、しかも
基板サセプタの上流部にはガスの冷却部を有しないこと
を特徴とする半導体の気相成長装置。1. In a semiconductor vapor phase growth apparatus by a thermal decomposition method, a cooling unit for cooling a gas passing through a substrate susceptor is provided on the downstream side in the vicinity of a substrate susceptor in a reaction tube, and the upstream portion of the substrate susceptor is provided. A semiconductor vapor phase growth apparatus characterized in that it has no gas cooling section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59053707A JPH0682614B2 (en) | 1984-03-21 | 1984-03-21 | Vapor growth equipment for semiconductors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59053707A JPH0682614B2 (en) | 1984-03-21 | 1984-03-21 | Vapor growth equipment for semiconductors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60196933A JPS60196933A (en) | 1985-10-05 |
| JPH0682614B2 true JPH0682614B2 (en) | 1994-10-19 |
Family
ID=12950299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59053707A Expired - Lifetime JPH0682614B2 (en) | 1984-03-21 | 1984-03-21 | Vapor growth equipment for semiconductors |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0682614B2 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5623957B2 (en) * | 1973-09-19 | 1981-06-03 | ||
| JPS58135633A (en) * | 1982-02-08 | 1983-08-12 | Hitachi Ltd | Epitaxial growth of silicon |
| JPS58145697A (en) * | 1982-02-19 | 1983-08-30 | Olympus Optical Co Ltd | Epitaxial silicon producer |
| JPS58148424A (en) * | 1982-02-26 | 1983-09-03 | Sony Corp | Vapor phase growth |
-
1984
- 1984-03-21 JP JP59053707A patent/JPH0682614B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60196933A (en) | 1985-10-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6039812A (en) | Device for epitaxially growing objects and method for such a growth | |
| JPS63108712A (en) | Method and apparatus for heating semiconductor substrate and for inducing reaction | |
| JPH0682614B2 (en) | Vapor growth equipment for semiconductors | |
| JP2733535B2 (en) | Semiconductor thin film vapor deposition equipment | |
| JPS61210622A (en) | Semiconductor manufacturing equipment | |
| JP4510151B2 (en) | Apparatus for epitaxial growth of objects and method for such growth | |
| JP2570873B2 (en) | Vapor phase growth equipment | |
| JPS59207622A (en) | Semiconductor thin film vapor phase growth apparatus | |
| JPS60192323A (en) | Semiconductor vapor growth apparatus | |
| JPH0582450A (en) | Vapor phase reaction equipment for manufacturing semiconductor device | |
| JPS607378B2 (en) | CVD equipment | |
| JPS6010621A (en) | Depressurized epitaxial growing equipment | |
| JPS632442Y2 (en) | ||
| JPH03245524A (en) | Cooling method for vapor growth device | |
| JPH04335520A (en) | Vapor growth apparatus | |
| JP2748700B2 (en) | Vapor phase growth equipment | |
| JPS6134932A (en) | Vapor growing process | |
| JPS63199412A (en) | Vapor growth device | |
| JPH05888A (en) | Vapor phase epitaxy device | |
| JPS60253212A (en) | Vapor growth device | |
| JPH03173419A (en) | Manufacture of semiconductor device | |
| JPS6214127Y2 (en) | ||
| JPS587817A (en) | Vapor growth method for semiconductor | |
| JPH03273616A (en) | Cvd apparatus | |
| JPS6217481Y2 (en) |