JPH068088A - Wafer polishing fixing plate - Google Patents
Wafer polishing fixing plateInfo
- Publication number
- JPH068088A JPH068088A JP17282692A JP17282692A JPH068088A JP H068088 A JPH068088 A JP H068088A JP 17282692 A JP17282692 A JP 17282692A JP 17282692 A JP17282692 A JP 17282692A JP H068088 A JPH068088 A JP H068088A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- polishing
- resin layer
- fixing plate
- hard resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/02—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine for mounting on a work-table, tool-slide, or analogous part
- B23Q3/06—Work-clamping means
- B23Q3/08—Work-clamping means other than mechanically-actuated
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Jigs For Machine Tools (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ウエーハを吸着保持し
て、これを回転させながら研磨布に押圧し、ウエーハを
研磨する研磨機用のウエーハ研磨用固定板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer polishing fixing plate for a polishing machine, which holds a wafer by suction and presses it against a polishing cloth while rotating the wafer to polish the wafer.
【０００２】[0002]
【従来の技術】近年の半導体デバイスの高集積化に伴っ
て、半導体ウエーハ（以下、単にウエーハと称す）には
高平坦度が要求されるが、該ウエーハを高精度に研磨す
るためには、これを吸着保持する固定板に対して、高剛
性及び高平担度が要求される。2. Description of the Related Art As semiconductor devices have been highly integrated in recent years, semiconductor wafers (hereinafter, simply referred to as "wafers") are required to have high flatness. In order to polish the wafers with high precision, High rigidity and high flatness are required for the fixing plate that adsorbs and holds this.
【０００３】而して、従来、図４（ａ）に示すように、
固定板１１の本体１２は剛性の高いセラミックで構成さ
れ、ウエーハ背面の保護のために、本体１２のウエーハ
吸着面には硬質樹脂が塗布されて硬質樹脂層１４が形成
されていた。Conventionally, as shown in FIG. 4 (a),
The main body 12 of the fixing plate 11 is made of highly rigid ceramics, and a hard resin layer 14 is formed on the wafer suction surface of the main body 12 by applying a hard resin to protect the back surface of the wafer.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、図４
（ａ）に示すように、ウエーハＷの背面（固定板に吸着
される面）には微小な凹凸（図示例では、凸部１６）が
存在しており、斯かるウエーハＷを図４（ｂ）に示すよ
うに剛性の高い固定板１１に吸着させると、該ウエーハ
Ｗは弾性変形し、その背面側の凸部１６がそのまま同ウ
エーハＷの研磨面側に転写されて凸部１６ａとなって現
われる。However, as shown in FIG.
As shown in FIG. 4A, minute irregularities (projections 16 in the illustrated example) are present on the back surface of the wafer W (the surface that is attracted to the fixing plate), and the wafer W is shown in FIG. When the wafer W is attracted to the fixed plate 11 having high rigidity, the wafer W is elastically deformed, and the convex portion 16 on the back surface side is directly transferred to the polishing surface side of the wafer W to form the convex portion 16a. Appears.
【０００５】そして、図４（ｂ）に示す状態のままで固
定板１１に吸着保持されたウエーハＷを回転させなが
ら、これを研磨布１７に押圧して、該ウエーハＷの斜線
で示す研磨代分だけ研磨によって除去し、研磨終了後に
ウエーハＷを固定板１１から取り外せば、図４（ｃ）に
示すように、ウエーハＷの背面側の凸部１６は弾性によ
って復元するため、ウエーハＷの研磨面の凸部１６に対
応する位置には凹部１６ｂが形成され、該ウエーハＷの
平担度を高く保つことができない。Then, while the wafer W adsorbed and held on the fixed plate 11 is rotated in the state shown in FIG. 4B, the wafer W is pressed against the polishing cloth 17 so that the polishing allowance of the wafer W shown by diagonal lines is shown. If the wafer W is removed by polishing, and the wafer W is removed from the fixing plate 11 after the polishing is completed, the convex portion 16 on the back side of the wafer W is restored by elasticity as shown in FIG. Since the concave portion 16b is formed at a position corresponding to the convex portion 16 on the surface, the flatness of the wafer W cannot be kept high.
【０００６】そこで、図５（ａ）に示すように、固定板
２１のウエーハ吸着面に軟質樹脂層２３を形成すること
が提案される。この場合は、図５（ｂ）に示すようにウ
エーハＷを固定板２１に吸着させたとき、該ウエーハＷ
の背面側の凸部２６は軟質樹脂層２３の弾性変形によっ
て吸収されるため、ウエーハＷの研磨面側には背面側の
凸部２６の影響は現われない。Therefore, it is proposed to form a soft resin layer 23 on the wafer suction surface of the fixing plate 21 as shown in FIG. 5 (a). In this case, when the wafer W is attracted to the fixing plate 21 as shown in FIG.
Since the convex portion 26 on the back surface side is absorbed by the elastic deformation of the soft resin layer 23, the influence of the convex portion 26 on the back surface side does not appear on the polishing surface side of the wafer W.
【０００７】しかしながら、上記構成によれば、軟質樹
脂層２３は剛性が低いために、図５（ａ）に示すよう
に、その表面を高平担に加工することが困難であり、ウ
エーハＷを吸着する前の状態においてその表面にはうね
りが存在する。従って、図５（ｂ）に示すように、ウエ
ーハＷを固定板２１に吸着させれば、ウエーハＷは弾性
変形して軟質樹脂層２３のうねりに沿って密着する。そ
して、この状態で固定板２１によりウエーハＷを回転さ
せながら、これを研磨布２７に押圧して該ウエーハＷを
図の斜線にて示す研磨代分だけ研磨して除去し、研磨終
了後にウエーハＷを固定板２１から取り外せば、図５
（ｃ）に示すように、ウエーハＷの背面は弾性によって
元の平面に復元するが、同ウエーハＷの研磨面には軟質
樹脂層２３に存在しているうねりが転写されて、ウエー
ハＷの平担度が悪くなってしまう。However, according to the above construction, since the soft resin layer 23 has a low rigidity, it is difficult to process the surface of the soft resin layer 23 to a high flat surface as shown in FIG. There is undulation on the surface in the state before being struck. Therefore, as shown in FIG. 5B, when the wafer W is attracted to the fixing plate 21, the wafer W elastically deforms and adheres along the swell of the soft resin layer 23. Then, while rotating the wafer W by the fixing plate 21 in this state, the wafer W is pressed against the polishing cloth 27 to polish and remove the wafer W by the polishing allowance indicated by the diagonal lines in the figure, and after the polishing, the wafer W is finished. 5 is removed from the fixing plate 21,
As shown in (c), the back surface of the wafer W is restored to the original flat surface by elasticity, but the undulations existing in the soft resin layer 23 are transferred to the polishing surface of the wafer W, and the flat surface of the wafer W is transferred. The burden becomes worse.
【０００８】本発明は上記問題に鑑みてなされたもの
で、その目的とする処は、研磨面に微小凹凸の無い高平
担度ウエーハを得ることを可能ならしめるウエーハ研磨
用固定板を提供することにある。The present invention has been made in view of the above problems, and an object of the present invention is to provide a fixing plate for polishing a wafer which makes it possible to obtain a high flatness wafer having no fine irregularities on the polishing surface. It is in.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成すべく本
発明は、ウエーハを吸着保持して、これを回転させなが
ら研磨布に押圧し、ウエーハを研磨するウエーハ研磨機
用の固定板のウエーハ吸着面に軟質樹脂層を形成し、そ
の上に硬質樹脂層を形成したことをその特徴とする。In order to achieve the above object, the present invention is a wafer for a fixed plate for a wafer polishing machine, which holds a wafer by suction and presses it against a polishing cloth while rotating the wafer to polish the wafer. The feature is that a soft resin layer is formed on the adsorption surface, and a hard resin layer is formed thereon.
【００１０】[0010]
【作用】本発明に係る固定板においては、そのウエーハ
吸着面（最外層）は剛性の高い硬質樹脂層で構成される
ため、該固定板のウエーハ面は高平担に加工され得る。
而して、背面（固定板に吸着される面）に微小凹凸が存
在するウエーハを固定板で吸着すると、該ウエーハの背
面側の凹凸は硬質樹脂層の変形を介して軟質樹脂層の弾
性変形によって吸収されるため、ウエーハの研磨面に背
面側の凹凸の影響が現われることがない。又、前述のよ
うに、固定板のウエーハ面には高平担度が確保されてい
るため、ウエーハにうねり等の変形が生じることがな
く、ウエーハは殆んど無歪状態で吸着されることにな
る。In the fixing plate according to the present invention, since the wafer suction surface (outermost layer) is composed of the hard resin layer having high rigidity, the wafer surface of the fixing plate can be processed to have a high flatness.
Then, when a wafer having minute unevenness on the back surface (surface that is attracted to the fixed plate) is attracted by the fixed plate, the unevenness on the back side of the wafer is elastically deformed by the soft resin layer through the deformation of the hard resin layer. Since it is absorbed by, the influence of unevenness on the back surface side does not appear on the polished surface of the wafer. Further, as described above, since the wafer surface of the fixing plate is ensured to have a high flatness, the wafer is not deformed such as waviness, and the wafer is adsorbed in almost no strain state. Become.
【００１１】従って、ウエーハの研磨加工後に該ウエー
ハを固定板から取り外しても、研磨終了後のウエーハに
変形が生じず、該ウエーハには高い平坦度が確保され
る。Therefore, even if the wafer is removed from the fixing plate after polishing the wafer, the wafer after polishing is not deformed, and high flatness is ensured for the wafer.
【００１２】[0012]
【実施例】以下に本発明の一実施例を添付図面に基づい
て説明する。An embodiment of the present invention will be described below with reference to the accompanying drawings.
【００１３】図１は本発明に係るウエーハ研磨用固定板
の側面図、図２の（ａ），（ｂ），（ｃ）は吸着前、研
磨中、研磨後のウエーハの状態を示す説明図である。FIG. 1 is a side view of a wafer polishing fixing plate according to the present invention, and FIGS. 2 (a), 2 (b) and 2 (c) are explanatory views showing states of a wafer before adsorption, during polishing, and after polishing. Is.
【００１４】本発明に係るウエーハ研磨用固定板１は、
円柱状の本体２を有しており、該本体２は剛性の高いセ
ラミックで構成されている。The wafer polishing fixing plate 1 according to the present invention comprises:
It has a cylindrical main body 2, and the main body 2 is made of highly rigid ceramic.
【００１５】そして、上記本体２の吸着面（ウエーハＷ
を吸着する面）には、ポリウレタン系、ポリサルファイ
ド系、シリコーン系、変成シリコーン系、変成エポキシ
系等の軟質樹脂が塗布されて弾性に富んだ（ヤング率：
約１８００Ｋｇｆ／ｃｍ2 ）軟質樹脂層３が形成されて
おり、該軟質樹脂層３の上には、エポキシ系、フェノー
ル系、ポリイミド系等の硬質樹脂が塗布されて剛性の高
い（ヤング率：約６１００Ｋｇｆ／ｃｍ2 ）硬質樹脂層
４が形成されている。尚、硬質樹脂と軟質樹脂の区分け
に関して明確な境界はないが、本発明においてはヤング
率をおよそ３０００Ｋｇｆ／ｃｍ2 を境とし、それより
も小さいヤング率を有するものは軟質樹脂とし、それよ
り大きいヤング率を有するものは硬質樹脂としている。
但し、軟質樹脂層３と硬質樹脂層４のそれぞれのヤング
率の値の組み合せは、これら樹脂層３，４の厚さ、ウエ
ーハＷの吸着面の突起の大きさ、研磨圧力、その他の要
因によって変化するため、硬質樹脂と軟質樹脂の区分け
は常に前記ヤング率（３０００Ｋｇｆ／ｃｍ2 ）を境に
なされるとは限らない。Then, the suction surface of the main body 2 (wafer W
The surface that adsorbs is coated with a soft resin such as polyurethane, polysulfide, silicone, modified silicone, modified epoxy, etc., which is highly elastic (Young's modulus:
1800 Kgf / cm 2 ) A soft resin layer 3 is formed, and a hard resin such as an epoxy resin, a phenol resin, or a polyimide resin is coated on the soft resin layer 3 to have high rigidity (Young's modulus: about 6100 Kgf / cm 2 ) hard resin layer 4 is formed. Although there is no clear boundary between the hard resin and the soft resin, in the present invention, the Young's modulus is about 3000 Kgf / cm 2 , and a resin having a Young's modulus smaller than that is a soft resin and larger than that. A resin having a Young's modulus is a hard resin.
However, the combination of the Young's modulus values of the soft resin layer 3 and the hard resin layer 4 depends on the thickness of the resin layers 3 and 4, the size of the protrusion on the suction surface of the wafer W, the polishing pressure, and other factors. Because of the change, the hard resin and the soft resin are not always separated by the Young's modulus (3000 Kgf / cm 2 ).
【００１６】以上のように、本実施例に係る固定板１に
おいては、本体２の吸着面（下面）にヤング率の異なる
軟質樹脂層３と硬質樹脂層４の２層が形成されており、
該固定板１には複数の真空孔５が縦方向（上下方向）に
貫設されている。尚、本体２には、軟質樹脂層３と硬質
樹脂層４が塗布される以前に真空孔５が予め形成されて
おり、本体２に軟質樹脂層３と硬質樹脂層４が塗布され
た後には、これらが硬化する前に真空孔５が吸引されて
該真空孔５が樹脂層３，４によって閉塞されるのが防が
れる。As described above, in the fixing plate 1 according to this embodiment, two layers of the soft resin layer 3 and the hard resin layer 4 having different Young's moduli are formed on the suction surface (lower surface) of the main body 2,
A plurality of vacuum holes 5 are formed in the fixing plate 1 in the vertical direction (vertical direction). A vacuum hole 5 is formed in the main body 2 in advance before the soft resin layer 3 and the hard resin layer 4 are applied, and after the soft resin layer 3 and the hard resin layer 4 are applied to the main body 2, The vacuum holes 5 are prevented from being sucked before they are hardened and blocked by the resin layers 3 and 4.
【００１７】而して、ウエーハＷの吸着前においては、
図２（ａ）に示すように、剛性の低い軟質樹脂層３の面
（硬質樹脂層４との接合面）の平坦度が悪く、これにう
ねりが生じていても、その上には剛性の高い硬質樹脂層
４が形成されているため、ウエーハＷが密着される面
（吸着面）となる硬質樹脂層４の外表面（露出面）の平
坦度は高く保たれる。この硬質樹脂層４の外表面の高平
坦度は、硬質樹脂層４が硬化した後、その表面を研磨す
ることによって得られる。Thus, before adsorbing the wafer W,
As shown in FIG. 2A, the flatness of the surface of the soft resin layer 3 having low rigidity (bonding surface with the hard resin layer 4) is poor, and even if undulation occurs, the rigidity of Since the high hard resin layer 4 is formed, the flatness of the outer surface (exposed surface) of the hard resin layer 4, which is the surface (adsorption surface) to which the wafer W is adhered, is kept high. The high flatness of the outer surface of the hard resin layer 4 is obtained by polishing the surface of the hard resin layer 4 after the hard resin layer 4 is cured.
【００１８】ここで、固定板１をこれに穿設された前記
真空孔５を介して真空引きすると、該固定板１の吸着面
（硬質樹脂層４の外表面）に負圧が発生し、ウエーハＷ
は図２（ｂ）に示すように固定板１の吸着面に真空吸着
される。このとき、ウエーハＷの背面（固定板１に吸着
される面）に図示のように微小な凸部６が存在しても、
該凸部６は硬質樹脂層４の変形を介して軟質樹脂層３の
弾性変形によって吸収されるため、ウエーハＷの研磨面
（図中、下面）に背面側の凸部６の影響が現われること
がない。又、前述のように、固定板１のウエーハ吸着面
（硬質樹脂層４の外表面）は高平担度が確保され、しか
も、ウエーハＷに対し軟質樹脂層３のうねり等の変形の
影響が及ばないため、ウエーハＷは殆んど無歪状態で吸
着されることになる。Here, when the fixed plate 1 is evacuated through the vacuum holes 5 formed in the fixed plate 1, a negative pressure is generated on the suction surface (the outer surface of the hard resin layer 4) of the fixed plate 1, Waha W
2 is vacuum-sucked on the suction surface of the fixed plate 1 as shown in FIG. At this time, even if there is a minute convex portion 6 as shown in the figure on the back surface of the wafer W (the surface that is attracted to the fixed plate 1),
Since the convex portions 6 are absorbed by the elastic deformation of the soft resin layer 3 through the deformation of the hard resin layer 4, the back surface convex portions 6 appear on the polishing surface (lower surface in the figure) of the wafer W. There is no. Further, as described above, the wafer suction surface of the fixed plate 1 (the outer surface of the hard resin layer 4) is ensured to have a high flatness, and the wafer W is affected by the deformation of the soft resin layer 3 such as waviness. Since the wafer W is not present, the wafer W is adsorbed in an almost strain-free state.
【００１９】従って、図２（ｂ）に示すようにウエーハ
Ｗを固定板１で吸着したまま該固定板１でウエーハＷを
回転させながら、これを研磨布７に押圧して該ウエーハ
Ｗを図の斜線にて示す研磨代分だけ研磨して除去し、研
磨終了後にウエーハＷを固定板１から取り外しても、図
２（ｃ）に示すように、研磨終了後のウエーハＷに変形
が生じず、該ウエーハＷには高い平坦度が確保され、そ
の研磨面に微小凹凸やうねりを生じることがない。Therefore, as shown in FIG. 2B, while the wafer W is attracted by the fixed plate 1, the fixed plate 1 rotates the wafer W while pressing the wafer W against the polishing cloth 7 to form the wafer W Even if the wafer W is removed by polishing by removing only the polishing allowance indicated by the oblique line, and the wafer W is removed from the fixed plate 1 after the polishing is completed, the wafer W after the polishing is not deformed as shown in FIG. 2C. A high flatness is ensured for the wafer W, and no fine unevenness or waviness is generated on the polished surface thereof.
【００２０】尚、ここで樹脂層のヤング率の測定方法を
図３に基づいて説明する。The method of measuring the Young's modulus of the resin layer will be described with reference to FIG.
【００２１】先ず、直径１２５ｍｍφ、厚さ１５ｍｍの
アルミニウム合金製の円板８の表面上に、樹脂を直径１
０ｍｍφ、厚さ５ｍｍに塗布し、該樹脂が硬化した後、
その表面をラップ処理してサンプルＳを形成する。First, a resin having a diameter of 1 mm is formed on the surface of an aluminum alloy disk 8 having a diameter of 125 mm and a thickness of 15 mm.
0mmφ, thickness 5mm, after the resin is cured,
The surface is lapped to form a sample S.
【００２２】その後、図示のように円板８をサンプルＳ
と共に測定用定盤９上にセットし、ウェイト１０によっ
て最初は３００ｇｆ／ｃｍ2 の圧力を１分間だけサンプ
ルＳに作用させ、そのときのサンプルＳの厚さＴ1 を測
定する。次に、同様にして１８００ｇｆ／ｃｍ2 の圧力
を１分間だけ作用させ、そのときのサンプルＳの厚さＴ
2 を測定する。Thereafter, as shown in the drawing, the disk 8 is mounted on the sample S.
At the same time, it is set on the surface plate 9 for measurement, and the weight 10 initially applies a pressure of 300 gf / cm 2 to the sample S for 1 minute, and the thickness T 1 of the sample S at that time is measured. Next, similarly, a pressure of 1800 gf / cm 2 is applied for 1 minute, and the thickness T of the sample S at that time is
Measure 2 .
【００２３】而して、サンプルＳのヤング率Ｅ（Ｋｇｆ
／ｃｍ2 ）は次式：Thus, the Young's modulus E (Kgf of the sample S is
/ Cm 2 ) is the following formula:
【００２４】[0024]
【数１】 Ｅ＝（１．８−０．３）÷（Ｔ1 −Ｔ2 ）／Ｔ1 によって算出される。[Number 1] is calculated by E = (1.8-0.3) ÷ (T 1 -T 2) / T 1.
【００２５】[0025]
【発明の効果】以上の説明で明らかな如く、本発明によ
れば、ウエーハを吸着保持して、これを回転させながら
研磨布に押圧し、ウエーハを研磨するウエーハ研磨機用
の固定板のウエーハ吸着面に軟質樹脂層を形成し、その
上に硬質樹脂層を形成したため、研磨面に微小凹凸の無
い高平担度ウエーハを得ることができる。As is apparent from the above description, according to the present invention, a wafer is used as a fixing plate for a wafer polishing machine for adsorbing and holding a wafer, pressing the wafer against a polishing cloth while rotating the wafer, and polishing the wafer. Since the soft resin layer is formed on the adsorption surface and the hard resin layer is formed on the soft resin layer, a high flatness wafer without fine irregularities on the polishing surface can be obtained.
【図１】本発明に係るウエーハ研磨用固定板の側面図で
ある。FIG. 1 is a side view of a wafer polishing fixing plate according to the present invention.
【図２】（ａ），（ｂ），（ｃ）は本発明に係るウエー
ハ研磨用固定板を用いた場合の吸着前、研磨中、研磨後
のウエーハの状態を示す説明図である。2 (a), (b) and (c) are explanatory views showing states of the wafer before adsorption, during polishing and after polishing when the wafer polishing fixing plate according to the present invention is used.
【図３】ヤング率の測定方法を示す説明図である。FIG. 3 is an explanatory diagram showing a method of measuring Young's modulus.
【図４】（ａ），（ｂ），（ｃ）は従来のウエーハ研磨
用固定板を用いた場合の吸着前、研磨中、研磨後のウエ
ーハの状態を示す説明図である。4 (a), (b) and (c) are explanatory views showing states of a wafer before adsorption, during polishing, and after polishing when a conventional wafer polishing fixing plate is used.
【図５】（ａ），（ｂ），（ｃ）は従来のウエーハ研磨
用固定板を用いた場合の吸着前、研磨中、研磨後のウエ
ーハの状態を示す説明図である。5 (a), (b) and (c) are explanatory views showing states of a wafer before adsorption, during polishing, and after polishing when a conventional wafer polishing fixing plate is used.
１ ウエーハ研磨用固定板 ２ 固定板本体 ３ 軟質樹脂層 ４ 硬質樹脂層 1 Fixed plate for wafer polishing 2 Fixed plate body 3 Soft resin layer 4 Hard resin layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 田中 好一 福島県西白河郡西郷村大字小田倉字大平 150番地信越半導体株式会社半導体白河研 究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor, Koichi Tanaka, Daigo 150, Odaira, Saigo-mura, Nishishirakawa-gun, Fukushima Prefecture Shin-Etsu Semiconductor Co., Ltd. Shirakawa Lab.
Claims (1)
せながら研磨布に押圧し、ウエーハを研磨する研磨機用
のウエーハ固定板であって、同固定板の本体のウエーハ
吸着面に軟質樹脂層を形成し、その上に硬質樹脂層を形
成して成るウエーハ研磨用固定板。1. A wafer fixing plate for a polishing machine, which adsorbs and holds a wafer, presses it against a polishing cloth while rotating the wafer, and polishes the wafer, wherein a soft resin is attached to a wafer adsorbing surface of a main body of the fixing plate. A fixed plate for wafer polishing, which comprises a layer and a hard resin layer formed on the layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04172826A JP3118319B2 (en) | 1992-06-30 | 1992-06-30 | Fixed plate for wafer polishing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04172826A JP3118319B2 (en) | 1992-06-30 | 1992-06-30 | Fixed plate for wafer polishing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH068088A true JPH068088A (en) | 1994-01-18 |
| JP3118319B2 JP3118319B2 (en) | 2000-12-18 |
Family
ID=15949081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04172826A Expired - Fee Related JP3118319B2 (en) | 1992-06-30 | 1992-06-30 | Fixed plate for wafer polishing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3118319B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012143724A (en) * | 2011-01-13 | 2012-08-02 | Disco Corp | Resin coating apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6189410U (en) * | 1984-11-19 | 1986-06-11 |
-
1992
- 1992-06-30 JP JP04172826A patent/JP3118319B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6189410U (en) * | 1984-11-19 | 1986-06-11 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012143724A (en) * | 2011-01-13 | 2012-08-02 | Disco Corp | Resin coating apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3118319B2 (en) | 2000-12-18 |
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