JPH0679761B2 - Dip soldering method for semiconductor wafer - Google Patents
Dip soldering method for semiconductor waferInfo
- Publication number
- JPH0679761B2 JPH0679761B2 JP61238615A JP23861586A JPH0679761B2 JP H0679761 B2 JPH0679761 B2 JP H0679761B2 JP 61238615 A JP61238615 A JP 61238615A JP 23861586 A JP23861586 A JP 23861586A JP H0679761 B2 JPH0679761 B2 JP H0679761B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- wafer
- solder
- molten solder
- soldering method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Molten Solder (AREA)
- Manufacturing Of Electrical Connectors (AREA)
Description
この発明は半導体ウエハの表面に予備はんだ層を被着形
成させるディップはんだ付け法に関する。The present invention relates to a dip soldering method for depositing a preliminary solder layer on the surface of a semiconductor wafer.
半導体ウエハの表面に予備はんだ層を被覆形成させるは
んだ付け法として、ピンセット等を用いて手作業により
半導体ウエハを把持し、溶融はんだの入っているはんだ
槽内にウエハを浸漬してはんだ付けを行う方法が従来よ
り一般に採用されている。しかしてかかるディップはん
だ付け法では次記のような欠点がある。すなわち、 （１）半導体ウエハをはんだ槽から引き上げる際にはん
だの後垂れが生じてウエハの端部にはんだが余分に付着
残留し、ウエハ全面に均一な厚みのはんだ層を被覆形成
することが困難である。 （２）はんだ付けを手作業により１枚ずつ行うため作業
能率が低く、かつその浸漬操作の手加減によりウエハに
付着したはんだ被膜の膜厚に塗りむらが生じて安定した
ディップはんだ付けが得られず、良品率が低下する。 （３）半導体ウエハは通常0.1〜0.2mm程度の薄い板であ
り、ピンセットの把持によりウエハの板面に損傷を与え
る恐れがある。As a soldering method for forming a preliminary solder layer on the surface of a semiconductor wafer, the semiconductor wafer is manually gripped using tweezers, etc., and the wafer is dipped in a solder bath containing molten solder for soldering. The method has been generally adopted from the past. However, such a dip soldering method has the following drawbacks. That is, (1) when the semiconductor wafer is pulled up from the solder bath, the solder droops and the solder excessively adheres and remains on the edge of the wafer, making it difficult to form a solder layer having a uniform thickness on the entire surface of the wafer. Is. (2) Since the soldering is done manually one by one, the work efficiency is low, and due to the dipping operation being adjusted manually, the thickness of the solder coating adhered to the wafer becomes uneven and stable dip soldering cannot be obtained. , The rate of non-defective products decreases. (3) A semiconductor wafer is usually a thin plate of about 0.1 to 0.2 mm, and there is a risk of damaging the plate surface of the wafer by gripping the tweezers.
この発明は上記の点にかんがみてなされたものであり、
上記した従来のディップはんだ付け法の欠点を除去し、
半導体ウエハの表面に均一な厚みの予備はんだ層を被覆
形成でき、かつその作業能率の向上が図れるようにした
半導体ウエハのディップはんだ付け法を提供することを
目的とする。The present invention has been made in consideration of the above points,
Removing the drawbacks of the conventional dip soldering method described above,
It is an object of the present invention to provide a semiconductor wafer dip soldering method capable of forming a preliminary solder layer having a uniform thickness on the surface of a semiconductor wafer by coating and improving the work efficiency thereof.
上記目的を達成するために、この発明は半導体ウエハの
周縁を把持する少なくとも３本の爪から成るチャック機
構と、該チャック機構の回転駆動部とから成り、回転駆
動部の運転によりチャック機構を介して半導体ウエハを
高速回転操作する回転式ウエハ保持具により半導体ウエ
ハを把持し、溶融はんだ内への浸漬時に半導体ウエハを
水平より傾けて浸漬し、溶融はんだからの引き上げ時に
半導体ウエハを水平より傾けて引き上げ、溶融ハンダか
らウエハを引き上げた直後に前記のウエハ保持具を介し
て半導体ウエハをその板面中心を軸とする自転の高速回
転をさせ、ウエハ表面に付着している余分なはんだを遠
心力により振り切って飛散除去させることにより、ウエ
ハの表面に均一な厚さのはんだ層を被覆形成させるよう
にしたものである。In order to achieve the above-mentioned object, the present invention comprises a chuck mechanism composed of at least three claws for holding the peripheral edge of a semiconductor wafer, and a rotary drive section of the chuck mechanism. The chuck mechanism is operated by the operation of the rotary drive section. The semiconductor wafer is held by a rotary wafer holder that rotates the semiconductor wafer at a high speed, tilts the semiconductor wafer from the horizontal when immersed in the molten solder, and tilts the semiconductor wafer from the horizontal when pulled from the molten solder. Immediately after pulling up and pulling the wafer from the molten solder, the semiconductor wafer is rotated at high speed by rotation around the plate surface center through the above-mentioned wafer holder to remove excess solder attached to the wafer surface by centrifugal force. The solder layer having a uniform thickness is formed on the surface of the wafer by shaking it off to remove it.
第１図はこの発明のディップはんだ付け法を実施するた
めの回転式ウエハ保持具の構成図、第２図は第１図のウ
エハ保持具を使用して行うディップはんだ付け法の工程
説明図で、まず第１図により回転ウエハ保持具の構成を
説明する。図において１は半導体ウエハであり、該ウエ
ハ１を把持するウエハ保持具２は、半導体ウエハ１の周
縁を把持するチャック機構３と、該チャック機構３を高
速回転操作する回転駆動部４とから構成されている。こ
こでチャック機構３は縦軸の回転軸31と、該回転軸31の
先端より30〜45度の曲げ角度αを与えて等角ピッチに分
岐したウエハ把持用の３本の爪32とから成り、かつ爪32
ははんだの付着し難い弾性金属線材，例えば0.6〜1.2φ
程度のステンレス鋼線で作られ、さらにその爪先端部に
はウエハ１との当接部にはんだの溜りが生じないように
フッ素樹脂がコーティングされている。 一方、回転駆動部４は駆動モータ41と、駆動モータ41に
直結された駆動歯車42と、駆動歯車42を挟んでその両側
に結合した２連の従動歯車43と、これら歯車機構を収容
したケーシング44と、ケーシング44を駆動モータ41に結
合する支持枠45と、およびケーシング44の下面中央から
下方に張り出す隔壁46とから成り、この２連の従動歯車
43に前記したチャック機構３の回転軸41が連結されるよ
うに構成されている。かかる構成で駆動モータ41を始動
することにより歯車機構を介して同時に２組のチャック
機構３が1900rpm程度の回転速度で高速回転され、また
駆動モータ41を停止すればチャック機構３が急速停止さ
れる。 次に上記したウエハ保持具２を使用して半導体ウエハ１
の表面に予備はんだ層を被覆形成させるディップはんだ
付け法の操作を第２図により説明する。図中５は槽内に
溶融はんだ51を収容したはんだ槽であり、この上方に前
記したウエハ保持具２が図示されない取扱移送機構に支
持されている。ここではんだ槽５の槽外で半導体ウエハ
１をウエハ保持具２に装備した２組のチャック機構３の
爪32に一枚宛装着する。この装着操作は爪32を手で外方
に広げ、ここに半導体ウエハ１を水平姿勢に挟み込んで
その周縁を３点支持方式により把持する。 次にウエハ保持具２を下方に吊り降ろしてチャック機構
３に把持されている半導体ウエハ１をはんだ槽内の溶融
はんだ51の中に浸漬させる。この場合にウエハの板面に
加わる抵抗を抑えて浸漬操作を素早く行うため、および
浸漬の際にウエハ１の裏面側で溶融はんだ内に空気を巻
き込まないようにするために、図示のようにウエハ保持
具２の全体姿勢を水平より角度βだけ傾けながらウエハ
１を溶融はんだ内に浸漬させる。続いてウエハ保持具２
を同じく角度βだけ傾け上昇操作して半導体ウエハ１を
溶融はんだから引き上げた直後に、ここでウエハ１の表
面に付着したはんだが溶融状態に在る間にウエハ保持具
２の駆動モータ41を始動する。 この回転駆動によりウエハ１はチャック機構３の回転軸
31を中心として自転の高速回転がされる。したがって高
速回転に伴う遠心力作用によりウエハ１の表面に付着し
ている余分なはんだ，およびウエハの引き上げに伴って
付着したはんだ槽内の浮遊酸化物等はウエハの周縁より
周囲に飛散し、したがってウエハ１の表面には均一な厚
さの予備はんだ層が被覆形成されるようになる。しかも
ここで回転数を適宜選択することにより予備はんだ層の
膜厚をコントロールすることも可能であり、かつこの回
転数をあらかじめ設定しておくことにより、バラツキな
く常に安定した厚さの予備はんだ層を被覆形成すること
ができる。なお周囲に飛散したはんだの液滴ははんだ槽
５の中に滴下回収される。続いて駆動モータ41を停止
し、はんだが固化した状態でウエハ保持具２をウエハ回
収位置まで移送し、ここでクラッチ機構３の爪32を広げ
て半導体ウエハ１を回収させる。なおこの回収操作の際
には先記のように爪32がフッ素樹脂コーティングされて
いるので、爪32とウエハ１との間がはんだ接合されるこ
とはなく、容易にウエハ１を爪32より離脱させることが
できる。しかも爪32は弾性のある金属線材より成り，か
つその把持方式もウエハ１の周縁を把持するので、チャ
ックミスによる半導体ウエハの割れや破損，およびはん
だ被覆層に損傷を与える恐れはない。 また図示実施例のようにウエハ保持具２に２組のチャッ
ク機構３を装備しておくことにより、同時に２枚の半導
体ウエハをはんだ付け処理できるので作業能率の向上が
図れ、かつこの場合に左右のチャック機構３の間には隔
壁46が設けてあり、高速回転操作によりウエハ１の周縁
から飛散したはんだ滴が互いに他のウエハに付着し合う
ことがない。なお図示例では２連形のものを示したが必
要によりチャック機構３を同じ保持具に３組以上装備し
て同時に３枚以上の半導体ウエハをディップはんだ付け
することも可能である。FIG. 1 is a configuration diagram of a rotary wafer holder for carrying out the dip soldering method of the present invention, and FIG. 2 is a process explanatory diagram of the dip soldering method performed using the wafer holder of FIG. First, the structure of the rotating wafer holder will be described with reference to FIG. In the figure, reference numeral 1 denotes a semiconductor wafer, and a wafer holder 2 for holding the wafer 1 is composed of a chuck mechanism 3 for holding the peripheral edge of the semiconductor wafer 1 and a rotation drive unit 4 for rotating the chuck mechanism 3 at a high speed. Has been done. Here, the chuck mechanism 3 is composed of a rotary shaft 31 of a vertical axis and three claws 32 for holding a wafer, which are bent at an equiangular pitch by giving a bending angle α of 30 to 45 degrees from the tip of the rotary shaft 31. , And claw 32
Is an elastic metal wire that is hard to attach solder, for example 0.6 to 1.2φ
It is made of approximately stainless steel wire, and the tip of the claw is further coated with a fluororesin so that solder is not accumulated at the contact portion with the wafer 1. On the other hand, the rotary drive unit 4 includes a drive motor 41, a drive gear 42 directly connected to the drive motor 41, two driven gears 43 connected to both sides of the drive gear 42 with the drive gear 42 interposed therebetween, and a casing accommodating these gear mechanisms. 44, a support frame 45 that connects the casing 44 to the drive motor 41, and a partition wall 46 that projects downward from the center of the lower surface of the casing 44.
The rotation shaft 41 of the chuck mechanism 3 is connected to 43. By starting the drive motor 41 with such a configuration, the two sets of chuck mechanisms 3 are simultaneously rotated at high speed at a rotation speed of about 1900 rpm via the gear mechanism, and when the drive motor 41 is stopped, the chuck mechanism 3 is rapidly stopped. . Next, using the wafer holder 2 described above, a semiconductor wafer 1
The operation of the dip soldering method for forming a preliminary solder layer on the surface of the substrate will be described with reference to FIG. In the figure, reference numeral 5 denotes a solder bath in which molten solder 51 is stored, and the wafer holder 2 described above is supported by a handling and transfer mechanism (not shown) above the solder bath. Here, the semiconductor wafers 1 are individually attached to the claws 32 of the two chuck mechanisms 3 mounted on the wafer holder 2 outside the solder bath 5. In this mounting operation, the claw 32 is spread outward by hand, the semiconductor wafer 1 is sandwiched horizontally in this state, and the peripheral edge thereof is gripped by a three-point support system. Next, the wafer holder 2 is suspended downward, and the semiconductor wafer 1 held by the chuck mechanism 3 is dipped in the molten solder 51 in the solder bath. In this case, in order to suppress the resistance applied to the plate surface of the wafer and perform the dipping operation quickly, and to prevent air from being entrained in the molten solder on the back surface side of the wafer 1 during dipping, the wafer as shown in FIG. The wafer 1 is immersed in the molten solder while inclining the entire posture of the holder 2 from the horizontal by an angle β. Then, the wafer holder 2
Immediately after pulling the semiconductor wafer 1 out of the molten solder by tilting it by an angle β, the drive motor 41 of the wafer holder 2 is started while the solder adhering to the surface of the wafer 1 is in a molten state. To do. By this rotation drive, the wafer 1 is rotated by the rotation axis of the chuck mechanism 3.
High-speed rotation around 31 is performed. Therefore, the excess solder attached to the surface of the wafer 1 due to the centrifugal force caused by the high-speed rotation, and the floating oxide in the solder bath attached when the wafer is pulled up scatter from the periphery of the wafer to the periphery. A preliminary solder layer having a uniform thickness is formed on the surface of the wafer 1 by coating. Moreover, it is also possible to control the film thickness of the preliminary solder layer by appropriately selecting the number of revolutions here, and by setting this number of revolutions in advance, the preliminary solder layer with a stable thickness that is always stable. Can be formed by coating. The solder droplets scattered around are dropped and collected in the solder bath 5. Then, the drive motor 41 is stopped, and the wafer holder 2 is transferred to the wafer collecting position in a state where the solder is solidified, and the claw 32 of the clutch mechanism 3 is expanded here to collect the semiconductor wafer 1. During the recovery operation, the claw 32 is coated with the fluororesin as described above, so that the claw 32 and the wafer 1 are not soldered to each other and the wafer 1 is easily separated from the claw 32. Can be made. Moreover, since the claw 32 is made of an elastic metal wire and its gripping method grips the peripheral edge of the wafer 1, there is no risk of cracking or damage of the semiconductor wafer due to a chuck error and damage to the solder coating layer. Further, by equipping the wafer holder 2 with two sets of chuck mechanisms 3 as in the illustrated embodiment, two semiconductor wafers can be soldered at the same time, so that the work efficiency can be improved and in this case, Partition walls 46 are provided between the chuck mechanisms 3 so that the solder droplets scattered from the peripheral edge of the wafer 1 due to the high speed rotation operation do not adhere to other wafers. In the illustrated example, a double type is shown, but if necessary, it is possible to equip the same holder with three or more sets of chuck mechanisms 3 and simultaneously dip-solder three or more semiconductor wafers.
以上述べたようにこの発明によれば、半導体ウエハの周
縁を把持する少なくとも３本の爪から成るチャック機構
と、該チャック機構の回転駆動部とから成り、回転駆動
部の運転によりチャック機構を介して半導体ウエハを高
速回転操作する回転式ウエハ保持具により半導体ウエハ
を把持し、溶融はんだ内への浸漬時に半導体ウエハを水
平より傾けて浸漬し、溶融はんだからの引き上げ時に半
導体ウエハを水平より傾けて引き上げ、溶融はんだから
ウエハを引き上げた直後に前記保持具を介して半導体ウ
エハをその板面中心を軸とする自転の高速回転をさせ、
ウエハ表面に付着している余分なはんだを遠心力により
飛散除去するようにしたことにより、ピンセット等を用
いて半導体ウエハを１枚ずつ溶融はんだに浸漬して引き
上げる従来の作業方法で問題になっている余分なはんだ
の付着残存，塗りむら，はんだ層膜厚の不均一性などの
発生を防止し、高い作業能率で常に均一な膜厚のはんだ
層を被着形成させてその良品率の大幅な向上を図ること
ができる。また、溶融はんだへの浸漬時及び引き上げ時
に半導体ウエハを水平より傾けることによる半導体ウエ
ハの裏面側で溶融はんだ内に空気を巻き込むことがなく
なり空気の巻き込みによる塗りむらが生じなくなった。As described above, according to the present invention, the chuck mechanism including at least three claws for gripping the peripheral edge of the semiconductor wafer and the rotation drive unit of the chuck mechanism are used, and the chuck mechanism is operated by the operation of the rotation drive unit. The semiconductor wafer is held by a rotary wafer holder that rotates the semiconductor wafer at a high speed, tilts the semiconductor wafer from the horizontal when immersed in the molten solder, and tilts the semiconductor wafer from the horizontal when pulled from the molten solder. Immediately after pulling up and pulling up the wafer from the molten solder, the semiconductor wafer is rotated at a high speed by rotation around the plate surface center through the holder,
Since the excess solder adhering to the wafer surface is scattered and removed by centrifugal force, it becomes a problem with the conventional work method of dipping semiconductor wafers one by one in molten solder using tweezers etc. Prevents residual solder sticking, uneven coating, and non-uniformity of the solder layer thickness, and a high-efficiency solder layer with a uniform thickness is always deposited to significantly improve the yield rate. It is possible to improve. Further, when the semiconductor wafer was tilted from the horizontal when dipping in the molten solder and pulled up, air was not entrained in the molten solder on the back surface side of the semiconductor wafer, and uneven coating due to entrainment of air did not occur.
第１図はこの発明によるディップはんだ付け法を実施す
る際に用いるウエハ保持具の構成断面図、第２図はディ
ップはんだ付け法の作業工程説明図である。各図におい
て、 1:半導体ウエハ、2:ウエハ保持具、3:チャック機構、4:
回転駆動部、51:溶融はんだ。FIG. 1 is a sectional view showing the structure of a wafer holder used when the dip soldering method according to the present invention is carried out, and FIG. In each figure, 1: semiconductor wafer, 2: wafer holder, 3: chuck mechanism, 4:
Rotation drive, 51: Molten solder.
Claims (1)
し、半導体ウエハの表面に予備はんだ層を被覆形成する
ディップはんだ付け法において、半導体ウエハの周縁を
把持する少なくとも３本の爪から成るチャック機構と、
該チャック機構の回転駆動部とから成り、回転駆動部の
運転によりチャック機構を介して半導体ウエハを高速回
転操作する回転式ウエハ保持具により半導体ウエハを把
持し、溶融はんだ内への浸漬時に半導体ウエハを水平よ
り傾けて浸漬し、溶融はんだからの引き上げ時に半導体
ウエハを水平より傾けて引き上げ、溶融はんだから半導
体ウエハを引き上げた直後に前記ウエハ保持具を介して
半導体ウエハをその板面中心を軸とする自転の高速回転
をさせ、半導体ウエハ表面に付着している余分なはんだ
を遠心力により飛散除去するようにしたことを特徴とす
る半導体ウエハのディップはんだ付け法。1. A dipping soldering method of immersing a semiconductor wafer in a molten solder to form a preliminary solder layer on the surface of the semiconductor wafer, and a chuck mechanism comprising at least three claws for gripping the peripheral edge of the semiconductor wafer. When,
The semiconductor wafer is held by a rotary wafer holder that is composed of a rotary drive unit of the chuck mechanism, and the semiconductor wafer is rotated at a high speed through the chuck mechanism by the operation of the rotary drive unit, and the semiconductor wafer is immersed in the molten solder. Is tilted from the horizontal and immersed, and when the semiconductor wafer is pulled up from the molten solder when tilted, the semiconductor wafer is pulled up from the molten solder immediately after the semiconductor wafer is pulled up from the molten solder, and the semiconductor wafer is centered on the plate surface center through the wafer holder. The semiconductor wafer dip soldering method is characterized in that the excessive solder adhering to the surface of the semiconductor wafer is scattered and removed by centrifugal force by rotating at high speed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61238615A JPH0679761B2 (en) | 1986-10-07 | 1986-10-07 | Dip soldering method for semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61238615A JPH0679761B2 (en) | 1986-10-07 | 1986-10-07 | Dip soldering method for semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6393468A JPS6393468A (en) | 1988-04-23 |
| JPH0679761B2 true JPH0679761B2 (en) | 1994-10-12 |
Family
ID=17032800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61238615A Expired - Lifetime JPH0679761B2 (en) | 1986-10-07 | 1986-10-07 | Dip soldering method for semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0679761B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0735650Y2 (en) * | 1989-10-13 | 1995-08-16 | ミツミ電機株式会社 | Rotary immersion soldering device |
| FR2671107B1 (en) * | 1990-12-27 | 1993-12-31 | Alcatel Cit | METHOD AND DEVICE FOR TINNING STEAMABLE BEACHES OF AN ELECTRONIC COMPONENT PACKAGE. |
| US5937896A (en) * | 1998-08-07 | 1999-08-17 | Mitsubishi Denki Kabushiki Kaisha | Check valve and seating valve |
| DE102008045257A1 (en) * | 2008-09-01 | 2010-03-04 | Rena Gmbh | Apparatus and method for handling substrates |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58221665A (en) * | 1982-06-17 | 1983-12-23 | Fujitsu Ltd | Preliminary soldering method of parts |
-
1986
- 1986-10-07 JP JP61238615A patent/JPH0679761B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6393468A (en) | 1988-04-23 |
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