JPH0677537A - Light emitting diode - Google Patents

Abstract

PURPOSE:To obtain an LED excellent in characteristics with high reproducibility, by connecting an element chip using an insulative substrate with a lead member, by using die bonding together with wire bonding. CONSTITUTION:When a lead member has a notch part, the electrode part 18 of an element chip 20 is connected with a lead member 16 by a bonding method, and then an electrode 19 is connected with a lead member 15 by using a wire. When a lead member has a hole part, an electrode part 18 of the element chip 20 is connected with the lead member 22 by a die bonding method, and then the electrode 19 is connected with a lead 21 by using a wire. As the material for die bonding of the light emitting chip and the lead member, e.g. Au-Si, Pb-Sn alloy based solder is used. Thereby a stable LED of high quality is obtained.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode in which a light emitting element chip using a transparent insulating substrate is mounted on a lead frame.

[0002]

2. Description of the Related Art Conventionally, element chips mounted on a light emitting diode (LED) which has been put into practical use are GaAs and I.
Since a conductive substrate such as nP is used, the positive and negative electrode parts are formed on the front and back of the element chip. LED with element chip mounted on conventional lead frame and sealed with resin
A cross-sectional view of the is shown in FIG. Since the element chip manufactured using the conductive substrate as described above has a structure having electrodes on the front and back sides, when adhering this element chip 20 to the lead frame 52, one electrode of the lead frame is The structure is such that it is adhered to the mirror portion 14 with solder or a conductive paste, and the other electrode is connected to the lead member 50 by a wire bonding method. After mounting the element chips on the lead members 50 and 51, the LED 30 is formed by sealing with an epoxy resin or the like. In recent years, an LED with a flip-chip type element chip using a transparent insulating substrate has been proposed. (JP-A-4-10670) LE manufactured by using a light emitting element chip in which a light emitting layer is formed on this transparent insulating substrate.
D has a structure as shown in FIG. 12, the electrodes 25 and 26 of the element chip 20 are located on the light emitting layer side with both positive and negative electrodes, and the connection with the lead members 54 and 53 is made by soldering or conductive paste. It was done.

[0003]

As described above, when a conductive substrate is used for the light emitting element chip, a current can be passed through the substrate, so that one positive and negative electrode is provided on the substrate side and one is provided on the light emitting layer side. It is possible to form one. When connecting to a lead frame, an LED was produced by a method in which an electrode on the substrate side was die-bonded to a lead member and an electrode on the light emitting layer side was wire-bonded to another lead member. However, when the transparent insulating substrate is used for the element chip, the flip chip method having a pair of positive and negative electrodes on the light emitting layer side is adopted, and therefore the element chip and the lead member cannot be connected by the above-described connection method. . Therefore, in order to connect the two kinds of electrodes formed on the light emitting layer side to the lead frame, the connecting surfaces of the two lead members with the element chip should be flat, and the electrode surface of the element chip should be placed on this flat surface. A step of bonding with a solder or a conductive paste.
However, in this method, two kinds of electrodes must be formed in the same plane, so that the electrode size must be 200 μm or less for the element chip size of 1 mm square or less.
There is a problem that the seed electrode portions come into contact with each other. In addition, since the electrode area adhered by solder or conductive paste with respect to the element chip size is large, it is not possible to form a complicated electrode pattern such as meander shape, net shape, or comb shape used for more efficient light emission. could not. Alternatively, when a multicolor light emitting diode that obtains light emission of two or more colors from one LED is produced, the electrode area must be further reduced because three or more electrode portions are required, and solder or conductive It was impossible to connect the electrode and the lead member with the paste.

The present invention is intended to solve the above-mentioned problems and to provide an LED which has good emission characteristics in a simple and reproducible manner. Means for Solving the Problems As a result of intensive studies to solve the above problems, the present inventors have conducted die bonding and wire bonding when connecting an element chip and a lead member using an insulating substrate. L which has good characteristics with good reproducibility when used together
It is now possible to obtain an ED.

That is, according to the present invention, n is formed on a transparent insulating substrate.
Type semiconductor layer, at least one light emitting layer composed of a combination of two or more selected from p type and i type semiconductor layers, and an electrode for applying a voltage to the light emitting layer at a predetermined portion of the semiconductor layer. In a device chip having a planar structure, a light emitting diode characterized in that one electrode is directly connected to a lead member and at least one other electrode is connected to another lead member by a wire. It is provided.

As the transparent insulating substrate in the present invention,
It is preferable that the transmittance is 80% or more in the range of 360 nm to 900 nm, and typical examples thereof include sapphire, (Al ₂ O ₃ ), quartz (SiO ₂ ), magnesium oxide (MgO), and strontium titanate (SrTiO 3).
₃ ), calcium fluoride (CaF ₂ ), magnesium fluoride (MgF ₂ ), titanium oxide (TiO ₂ ), etc., but any other transparent and insulating material may be used.
However, it is preferable that the semiconductor thin film formed directly on the substrate has a lattice constant that matches the lattice constant of the transparent insulating substrate as much as possible. The lattice mismatch between the transparent insulating substrate and the semiconductor thin film formed directly on the substrate is preferably 10% or less, more preferably 5% or less.
Therefore, it is also preferable to use the transparent insulating substrate which is turned off at a predetermined angle. For example Ga
In the case of N, it is preferable to use a substrate in which the sapphire R plane is off by 9.2 °. When the lattice mismatch between the transparent insulating substrate and the semiconductor thin film is very large, a buffer layer may be provided between the transparent insulating substrate and the semiconductor thin film. As the buffer layer, an amorphous substance such as AlN, GaN, Si, or SiC, or a single crystal substance such as AlN, ZnO, or SiC can be provided.

In the present invention, a method for forming a light emitting layer on a transparent insulating substrate is MBE (Molecular).
Beam Epitaxy) method, CBE (Chemi)
cal beam epitaxy method, MONBE
(Metal Organic MBE) method, CVD (C
chemical Vapor Deposition
n) method, MOCVD (Metal Organic C)
A semiconductor growth apparatus such as the VD) method can be used. The light emitting layer is formed on the transparent insulating substrate by the above-described thin film manufacturing method. This light emitting layer may have any of a MIS structure, a single hetero structure having a pn junction and a double hetero structure, a quantum well structure or a superlattice structure.

The light emitting layer in the present invention is a light emitting layer composed of a combination of two or more kinds selected from an n-type semiconductor layer, a p-type semiconductor layer and an i-type semiconductor layer. The semiconductor forming these light emitting layers may be either a III-V group compound semiconductor or a II-VI group compound semiconductor.
A GaN-based semiconductor, which is a II-V group compound semiconductor, is particularly preferable because it can grow a thin film having good crystallinity on a transparent insulating substrate such as sapphire, CaF ₂ , and MgO.

Since the light emitting device chip of the present invention uses the transparent insulating substrate, it is necessary to form a pair of positive and negative electrodes in the same plane on the light emitting layer side, and the light emitting layer must be etched. Either an wet etching method or a dry etching method may be used as an etching method for manufacturing the light emitting element chip, depending on the type of the light emitting layer. It is also preferable to perform heat treatment after etching, and by performing this heat treatment, deterioration of the film quality that has been caused by etching can be recovered, and the interface resistance can be lowered to obtain the current necessary for light emission at low voltage. . The apparatus for heat treatment may be a furnace capable of controlling the atmosphere such as a tubular furnace or a lamp annealing furnace.

The electrode forming method of the light emitting element chip in the present invention includes MBE method, vacuum evaporation method, electron beam evaporation method, sputtering method and the like. As the electrode material, a material that can obtain ohmic contact with each of the n-type semiconductor and the p-type or i-type semiconductor is preferable, and a single metal may be used, or a material obtained by mixing two or more kinds of metals and alloying them may be used. The condition for obtaining the ohmic contact is preferably a metal having a work function smaller than that of the semiconductor for the electrode on the n-type semiconductor side, and a work function larger than that of the semiconductor for the electrode on the p-type semiconductor side. It is preferable to use the metal which has. For example, GaN which is a III-V compound semiconductor
In this case, the n-type GaN layer has Al, In, Ti, P
It is preferable to use b, Sb, Nb, Zr, Mn, or the like for the electrode, and Au, Pt, Ge, or the like for the i-type or p-type GaN layer.
Good ohmic contact can be obtained by using As, Ir, Re, Rh, Pd, Ni, W or the like for the electrode. Further, when the element chip is adhered to the lead member after forming the ohmic electrode, Ni, Ti, A is formed on the ohmic electrode in order to improve the adhesiveness and to improve the heat resistance of the electrode portion.
It is also preferable to stack metals such as u and W.

After the electrode is formed, it is also preferable to perform heat treatment at a temperature not higher than the decomposition temperature of the semiconductor in a flow of an inert gas such as Ar, N ₂ or He or in a flow of a gas containing the constituent elements of the semiconductor. The interface resistance can be lowered, and good diode characteristics can be obtained. The shape of the lead frame in the present invention is such that a connecting portion for fixing the element chip to the lead member and applying a voltage, each electrode for applying a voltage to each part of the element chip, and the other lead member are wired. Any structure can be used as long as they can be connected to each other by changing the shape of the electrodes of the light emitting element chip. Further, it is desirable that the lead frame be provided with a mirror surface in order to effectively collect the emitted light.
An example of the combination of the electrode shape of the light emitting element chip and the lead frame shape is shown in FIGS. 2A and 2B, but is not limited to this. FIG. 2A shows an example in which the lead member 16 has a notch, and the electrode portion 18 of the element chip 20 is connected to the lead member 16 by a die bonding method, and then the electrode portion 19 and the lead portion 19 are connected. The member 15 is connected by a wire. FIG. 2B shows an example in which the lead member 22 has a hole portion. The electrode portion 18 of the element chip 20 is connected to the lead member 22 by a die bonding method, and then the electrode portion 19 and the lead member are connected. 21 is connected by a wire.

As a material for adhesion when die-bonding the light emitting device chip and the lead member in the present invention,
What is generally used can be used. For example, Au-Si, Pb-Sn alloy-based solder, a small amount of metal such as Bi, Sb, Ag, Cd, Zn, and In added to this solder, Bi, Na, Tl, Cd, Sn, Pb, etc. Alloyed by adding, alloyed by adding In, Zn, Cd, Sn, Bi, etc., Ga, Ag, Zn, Sn, In
And the like, a metal such as Au, Al, In, Ag, or a conductive paste containing Ag, Au, Cu, or the like as a conductive component. As a method of bonding the element chip and the lead member, a conventional die bonding device is used. That is, after forming an adhesive layer such as solder or metal on the electrode portion of the element chip or the adhesive surface of the element chip of the lead member by a vapor deposition method, a coating method, a plating method, or the like, the electrode portion and the lead member are brought into close contact with each other. While adhering, the lead member is heated to a temperature equal to or higher than the melting point of the adhesive material to adhere.

Further, the present invention is characterized in that a wire bonder method is used when wiring the electrode member of the light emitting element chip and the lead member. After the element chip is fixed to the lead member by the die bonding method, it is set in a wire bonding device and heated and / or ultrasonic waves are applied to connect the electrode portion and the lead member. The material of the wire used at this time is Au, A
g, Cu, Al, and other metals, Au-Si, Al-Si,
There are alloys such as Al-Mg, Al-Si-Mg, and Al-Ni. Which material to use may be selected in consideration of the material of the electrode portion of the light emitting element chip and the workability of wire bonding. Among them, Au and Al-Si are preferable because they have good workability. The thickness of the wire may be selected in consideration of the size of the electrode portion of the light emitting element chip and the workability of wire bonding, and is usually 20 to 300 μmφ. Further, it is also a preferable method to perform wire bonding in an inert gas in order to prevent oxidation of the wire.

After that, the lead member and the element chip are molded with a sealing material to produce an LED. This molding step may be performed in one step, or the element chip may be first fixed to the lead member and then the condenser lens may be formed, but the method is not particularly limited to these methods. As the sealing material in the present invention, it is preferable to use a translucent material having a light transmittance of 80% or more in the emission wavelength range of the light emitting element chip. As the translucent material, at least one of methacrylic resin, epoxy resin, polycarbonate resin, polystyrene resin, polyolefin resin, and low melting point glass can be used. As a sealing method, for example, a method of casting a raw material of these translucent materials or a heating melt into a mold of a desired shape and solidifying in the mold can be used. Examples of the solidification method include polymerization and solidification of monomers and oligomers by heat or light, cooling and solidification of a heated melt, and chemical reaction. If necessary, this translucent material should contain dyes, pigments, phosphors, etc. for color tone adjustment and visibility correction, antioxidants for stabilizing resins, stabilizers, and lubrication for molding. It is also possible to add agents and lubricants.

LE manufactured by using each method described above
An example of D is shown in FIG. 4, but is not limited to this.
The element chip 20 has at least one light emitting layer composed of a combination of two or more selected from an n-type semiconductor layer, a p-type semiconductor layer and an i-type semiconductor layer on an insulating substrate, and emits light at a predetermined portion of the semiconductor. It is an element chip having a planar structure having electrodes for applying a voltage to a layer. First, after solder is vapor-deposited on the adhesive surface of the lead member 28 by vapor deposition, the lead member 28 is
The element chip 20 is placed on the bonding surface of No. 1 and is heated to a temperature not lower than the melting point of the solder for bonding. Then, each electrode and lead member are connected by an Au wire using a wire bonding method. After that, the LED 30 is manufactured by sealing with a transparent resin.

Hereinafter, as an example, a transparent insulating substrate A
A method for forming an LED by forming a GaN thin film using the MBE method using l ₂ O ₃ will be described, but the method is not particularly limited thereto. As the apparatus, a gas source MBE apparatus provided with an evaporation crucible (Knudsen cell) 2, 3 and 4, a gas cell 7 and a substrate heating holder 5 in a vacuum container 1 as shown in FIG. 1 was used.

Ga metal was placed in the evaporation crucible 2 and heated to a temperature of 10 ¹³ to 10 ¹⁹ / cm ² · sec on the substrate surface. A gas introduction pipe 8 was used to introduce ammonia, and ammonia was blown directly from the gas cell 7 onto the substrate 6. Ammonia was supplied so that the amount of ammonia introduced was 10 ¹⁶ to 10 ²⁰ / cm ² · sec on the substrate surface. In, Al, etc. are put in the evaporation crucible 3 and a film is formed by controlling temperature and time so that a compound semiconductor having a predetermined composition and a semiconductor having a predetermined carrier density are obtained. The evaporation crucible 4 has Mg, Zn, Be, Sb, S
i, Ge, C, Sn, Hg, As, P, etc. are added, and doping is performed by controlling the temperature and the supply time so as to obtain a predetermined supply amount.
A type semiconductor layer is formed.

A sapphire R surface is used for the substrate 6, and 20
Heated to 0-900 ° C. The off-angle of the sapphire R-plane substrate is preferably 0.8 degrees or less. First, after heating the substrate 6 in the vacuum container 1 at 750 ° C., each crucible is set to a predetermined growth temperature, and the evaporation crucible 3 is first opened to
0.05 at a growth rate of ~ 30 Å / sec
An n-type GaN thin film having a thickness of ˜2 μm is prepared. After that, the shutter of the evaporation crucible 4 charged with Zn is opened, and the i-type or p-type Ga is grown at a growth rate of 0.1 to 30 Å / sec and a thickness of 0.01 to 1 μm.
An N thin film is formed to form a light emitting layer. During this film formation, the gas cell is always heated to supply ammonia to the surface of the substrate.

FIG. 3 shows a process of manufacturing an LED using a GaN thin film having a light emitting layer formed by the above method.
It will be described with reference to FIGS. A resist is applied on the surface of the GaN thin film. The thickness of the resist may be changed depending on the thickness of the GaN thin film to be etched.
It is preferably 1 to 3 μm. The spin coater conditions are 2500 rpm and 30 sec. 90 ° C after coating
Prebak in a clean oven heated to 30 minutes (a). Then, UV exposure and development were performed using the element pattern forming mask (b). Ga of i-layer or p-layer is formed by ion milling using Ar as gas.
The N thin film 19 is removed (c). After the end of ion milling,
The resist is removed using acetone. The time for performing ion milling in each step can be determined by the film thickness for etching.

After the above steps, the sample was set in a tubular furnace and heat-treated at 500 ° C. for 30 minutes in an atmosphere of ammonia. After the heat treatment, a resist is applied again, prebaking is performed, UV exposure and development are subsequently performed using a mask for forming an n-layer electrode (d), and then n-type GaN is formed by a vacuum deposition method.
As an electrode of the layer 18, Al was vapor-deposited to a thickness of 3000 angstrom, and an electrode pattern 25 was formed by lift-off (g). Then, the resist is applied again, pre-baked, subjected to UV exposure and development using the mask for forming the i-layer electrode (f), and then p-type or i-type by the vacuum deposition method.
Au was vapor-deposited to a thickness of 3000 angstrom as an electrode of the type GaN layer 19, and the electrode pattern 26 was formed by lift-off (g). After that, 300 ° C in Ar flow,
Heat treatment was performed for 1 hour.

The n-type GaN-side electrode of the light-emitting element chip manufactured as described above is bonded to the lead member 28 by soldering, and the i-type GaN-side electrode is the other side of 30 μmφAu wire 17 using a wire bonder device. Lead member 2
Bonded to 7. Then, the light emitting element chip was sealed with a transparent epoxy resin 29 (h). After curing the epoxy, bend the lead member and mold it again with transparent epoxy resin.
ED30 was produced.

[0022]

EXAMPLES The present invention will be described in more detail below with reference to examples.

[0023]

Example 1 An example in which an Al ₂ O ₃ R surface is used as a transparent insulating substrate and a GaN thin film is formed by the MBE method to fabricate an LED will be described. An MBE apparatus provided with an evaporation crucible 2, 3, 4, a gas cell 7, a substrate heating holder 5, and a gas introduction pipe 8 for supplying a gas to the gas cell 7 in a vacuum container 1 as shown in FIG. Using.

Ga metal was put in the evaporation crucible 2 and
Heated to 50 ° C. Ammonia is used as gas,
It was supplied to the gas cell 7 through the gas introduction pipe 8 at a rate of 5 cc / min. Ammonia gas was directly supplied to the substrate 6. As the substrate 6, a sapphire R surface having an off angle of 0.5 degree is used. The pressure in the vacuum container was 2 × 10 ⁻⁶ Torr during film formation.

First, the substrate 6 is heated at 900 ° C. for 30 minutes, and then the temperature is maintained at 750 ° C. to form a film. The film formation was performed by opening the shutter of the Ga crucible while supplying ammonia from the gas cell 7 heated to 300 ° C.
0.5 μm film thickness at film forming rate of Angstrom / sec
Of n-type GaN thin film was prepared. Furthermore, the shutter of the evaporation crucible 4 which was charged with Mg and kept at 300 ° C. was opened, and the Mg-doped GaN thin film was 1.5 angstrom /
A light emitting layer was formed by forming a film with a thickness of 0.05 μm at a film forming rate of sec. The RHEED pattern of the produced thin film was streaky and had good crystallinity and flatness. When the resistance was measured, there was a resistance of 10 MΩ or more and it was in an insulating state.

250 using a spin coater on the light emitting layer
Apply resist under the conditions of 0 rpm and 30 sec, and
Prebaked in clean oven at 30 ° C. for 30 minutes. After baking, UV exposure was performed using a mask for element pattern formation, and development was performed. Next, acceleration voltage 500V, pressure 2 × 1
0 ^over 4 Torr conditions the element pattern formation is performed for 15 minutes ion milling in Ar were carried out. Then, the resist was removed using acetone. Next, the resist was applied again using a spin coater under the conditions of 2500 rpm and 30 sec, and prebaked in a clean oven at 90 ° C. for 30 minutes. After baking, UV is applied using a mask for removing the i layer.
Exposed and developed. Then, acceleration voltage 500V, pressure 2
Ion milling was carried out for 1 minute in an Ar atmosphere under the condition of × 10 ^-4 Torr to remove the unnecessary i layer. Then, the resist was removed with acetone. Then, set in a tubular furnace and 500 ° C. in an ammonia gas flow of 10 cc / min,
Heat treatment was performed for 30 minutes. Further, a resist was applied using a spin coater under the conditions of 2500 rpm and 30 sec, and prebaked in a clean oven at 90 ° C. for 30 minutes. After baking, it was exposed to UV using a mask for forming an electrode of the n-type GaN layer and developed. Next, 0 Al metal in a vacuum of 2 × 10 ^over 6 Torr mounted in a vacuum deposition machine.
It was vacuum-deposited to a thickness of 2 μm. Then, liftoff was performed with acetone to form an electrode pattern. Then, i-type Ga
UV exposure was performed and development was performed using a mask for forming an N layer electrode. Subsequently, it was mounted on a vacuum vapor deposition machine and Au metal was vacuum vapor deposited to a thickness of 0.2 μm in a vacuum of 2 × 10 ⁻⁶ Torr.
After that, liftoff was performed with acetone to form an electrode pattern, and heat treatment was carried out at 300 ° C. for 1 hour in an Ar flow to complete the structure of the element chip. A side view and a top view of the manufactured element chip are shown in FIGS. 5 (a) and 5 (b).

The cutting of each chip was performed using a dicing saw. One element chip is 0.5 mm x 0.5 m
m. One of the chips was taken out and the n-type GaN layer electrode was die-bonded to the lead member with Ag paste. Further, the i-type GaN layer electrode and the lead member were connected with a 30 μmφAu wire using a wire bonding device. A cross-sectional view after this connection is shown in FIG. The light emitting device manufactured by the above method was sealed with a transparent epoxy resin, the epoxy resin was cured, the lead member was bent, and the transparent epoxy resin was sealed again to manufacture an LED as shown in FIG. 7.

When 100 LEDs were manufactured by the same method, light emission was confirmed with 96 LEDs. This LE
When the emission intensity of D was measured, it was 50 V at 10 V and 20 mA.
mcd, and blue light emission was observed.

[0029]

COMPARATIVE EXAMPLE 1 A device was formed by using a GaN thin film having a light emitting layer formed on an Al ₂ O ₃ substrate by the same method as in Example 1. The device manufacturing process was also performed in the same manner as in Example 1, and both electrodes of the n-type GaN layer and the i-type GaN layer were Ag.
The lead member was die-bonded with a paste and then sealed with a transparent epoxy resin to produce an LED.
When 100 LEDs were made by the same method, Ag
The positive and negative electrodes were connected by the paste, and only 28 LEDs were able to emit light.

[0030]

Example 2 Al as a transparent insulating substrate₂O₃Use R side
Used by the MBE method_1-xIn _xForm N thin film 2
An example of producing a color-emitting LED will be described. In Figure 2
In the vacuum container 1 as shown, the evaporation crucibles 2, 3, 4,
Gas cell 7, substrate heating holder 5, and gas
MB equipped with a gas introduction pipe 8 for supplying gas to
Equipment E was used.

Ga metal is put in the evaporation crucible 2 and 10
Heat to 20 ° C and put In metal into the evaporation crucible 3 1
Heated to 000 ° C. Ammonia is used as the gas, and 5 cc / min is supplied to the gas cell 7 through the gas introduction pipe 8.
Was fed at the rate of. Ammonia gas was directly supplied to the substrate 6. The substrate 6 has an off angle of 0.
Use a 5 degree sapphire R surface.

The pressure in the vacuum container is 2 × during film formation.
10^-6It was Torr. First, the substrate 6 is heated at 900 ° C. for 3
After heating for 0 minutes, the temperature is kept at 750 ° C to form a film.
U The film is formed by a gas cell 7 in which ammonia is heated to 300 ° C.
Opening the shutter of the Ga crucible while supplying from
The film thickness is 1.5 angstrom / sec.
An n-type GaN thin film of 0.5 μm was prepared. Further Mg
The evaporation crucible 4 that was charged and kept at 300 ° C
And open the Mg-doped i-type GaN thin film.
The film thickness is 0.1 at a film forming rate of 1.5 angstrom / sec.
A film having a thickness of 05 μm was formed to form a first light emitting layer. Next
Then, lower the substrate temperature to 700 ℃ and stabilize the temperature for 30 minutes.
After opening, open the shutter of the crucible of Ga and In, and 1.5
0.5 μm film thickness at a growth rate of Angstrom / sec
N-type Ga_0.8In_0.2N thin film is grown and further on
Open the vapor deposition crucibles 2, 3 and 4 shutters and
I-type Ga doped with_0.8In_0.2N thin film 1.5
Film thickness 0.05μ at growth rate of Angstrom / sec
A film having a thickness of m was formed to form a second light emitting layer. Film formation
2500 rpm for 3 minutes using a spin coater
Apply the resist under the condition of 0 sec and clean at 90 ℃
Prebaked in oven for 30 minutes. Element after baking
UV exposure and development using a mask for pattern formation
It was Then, acceleration voltage 500V, pressure 2 × 10^-4Tor
Perform ion milling for 25 minutes with Ar under the condition of r
A turn was formed. Then, use acetone to register
Removed. Then, again using the spin coater 25
Apply the resist under the conditions of 00 rpm and 30 sec.
Prebaked in a 0 ° C. clean oven for 30 minutes.
After baking, UV exposure using a photomask and development
It was Next, acceleration voltage 500V, pressure 2 × 10^-4Tor
Ion milling for 15 minutes in Ar atmosphere under r condition
Unnecessary unnecessary i-type Ga_0.8In_0.2N layer, n-type Ga_0.8I
n_0.2The N layer and the i-type GaN layer were removed. Then spin again
Condition of 2500 rpm, 30 sec using a coater
Apply the resist with and clean in a clean oven at 90 ° C for 3
Prebaked for 0 minutes. After baking, use a photomask
UV exposed and developed. Then, acceleration voltage 500V,
Pressure 2 × 10^-413 minutes in Ar atmosphere under Torr conditions
Unnecessary i-type Ga by ion milling_0.8In_0.2
N layer, n-type Ga_0.8In _0.2The N layer was removed. Further again
Degree spin coater 2500rpm, 30sec
Apply the resist under the conditions of 90 ° C clean oven
Prebaked for 30 minutes in. Photo mask after baking
Was exposed to UV and developed. Next, Ion Mirin
Unnecessary i-type Ga_0.8In_0.2Remove the N layer
It was Then, the resist was removed with acetone. This element
Set the tip in the tubular furnace and set the
Heat treatment was performed at 500 ° C. for 30 minutes in a near gas flow.
Furthermore, using a spin coater, 2500 rpm, 30
Apply the resist under the condition of sec and clean at 90 ° C.
Prebaked in oven for 30 minutes. N type G after baking
aN layer and n-type Ga_0.8In_0.2For forming N layer electrode
UV exposure was performed using a mask and development was performed. Next, vacuum deposition
2x10 attached to the machine^-6Al metal in a vacuum of Torr
It was vacuum-deposited to a thickness of 0.2 μm. Then with acetone
The electrode pattern was formed by lifting off. Then, i type
GaN layer and i-type Ga_0.8In_0.2For forming N layer electrode
UV exposure was carried out using the above mask and developed. Then, the vacuum
Mounted on a vapor deposition machine, 2 x 10^-6Au metal in vacuum at Torr
Was vacuum-deposited to a thickness of 0.2 μm. Then acetone
Lift off with to form an electrode pattern, and
Complete the element chip structure by heat treatment at 00 ° C for 1 hour.
I made it. A side view and a top view of the manufactured element chip
8 (a) and 8 (b).

The cutting of each chip was performed using a dicing saw. One element chip was 1 mm × 1 mm. One of the chips was taken out and the electrodes of the n-type GaN layer and the n-type Ga _0.8 In _0.2 N layer were die-bonded to the lead member with Ag paste. Furthermore, i-type GaN
The layer electrode and the lead member, and the i-type Ga _0.8 In _0.2 N layer electrode and the lead member were bonded using a wire bonding device.
The connection was made with a μmφAu wire. A top view after this connection is shown in FIG. The light emitting device manufactured by the above method was sealed with a transparent epoxy resin, the epoxy was cured, and then the lead member was bent and sealed with the transparent epoxy resin again to manufacture an LED as shown in FIG.

When 100 LEDs were manufactured by the same method, light emission was confirmed with 89 LEDs. This LE
When the emission intensity of D was measured, the lead member 66 and the lead member 67 emitted blue light of 10 V and 40 mcd at 18 mA, and the lead member 66 and the lead member 68 emitted 8 V, 2
A green emission of 60 mcd was observed at 0 mA.

[0035]

According to the present invention, in a planar type device chip structure in which a light emitting layer is formed on a transparent insulating substrate, one of the electrodes formed on the same plane is directly connected to a lead member by a die bonding method, By connecting at least one other electrode to another lead member with a wire by a wire bonding method, it becomes possible to supply a stable and high-performance LED.

[Brief description of drawings]

FIG. 1 is a schematic diagram of an MBE apparatus used for thin film production.

2 (a) (b) L prepared by the method according to the present invention
It is a top view and sectional drawing of ED.

3A to 3H are cross-sectional views showing a manufacturing process of an LED.

FIG. 4 is a cross-sectional view of an LED manufactured by the method according to the present invention.

5 (a) is a top view of the element chip manufactured in Example 1. FIG. (B) It is sectional drawing of the element chip produced in Example 1.

FIG. 6 is a cross-sectional view when the element chip of Example 1 is mounted on a lead member.

FIG. 7 is a cross-sectional view of the LED manufactured in Example 1.

8 (a) is a top view of the element chip manufactured in Example 2. FIG. (B) It is sectional drawing of the element chip produced in Example 2.

FIG. 9 is a top view of the element chip of Example 2 mounted on a lead member.

FIG. 10 is a cross-sectional view of the LED manufactured in Example 2.

FIG. 11 is a cross-sectional view of an LED manufactured by a conventional method.

FIG. 12 is a cross-sectional view of a flip-chip type LED manufactured by a conventional method.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Vacuum container 2 Evaporating crucible 3 Evaporating crucible 4 Evaporating crucible 5 Substrate heating holder 6 Substrate 7 Gas cell 8 Gas introduction pipe 9 Gas flow control valve 10 Cryopanel 11 Cold trap 12 Oil diffusion pump 13 Oil rotary pump 14 Mirror part 15 Lead Member (1) 16 Lead member (2) 17 Metal wire 18 n-type semiconductor layer 19 p-type or i-type semiconductor layer 20 Element chip 21 Lead member (3) 22 Lead member (4) 23 Resist 24 Transparent insulating substrate 25 n Type semiconductor layer electrode 26 p-type or i-type semiconductor layer electrode 27 lead member (5) 28 lead member (6) 29 transparent resin 30 LED 31 n-type GaN semiconductor layer electrode 32 i-type GaN semiconductor layer electrode 33 i-type GaN semiconductor layer 34 n-type GaN semiconductor layer 35 sapphire substrate 36 Au wafer Yer 37 lead members (7) 38 lead member (8) 39 GaN light-emitting element chips 40 GaNMIS type LED 41 n-type Ga _0.8 In _0.2 N semiconductor layer 42 i-type Ga _0.8 In _0.2 N semiconductor layer 43 i-type Ga _0.8 In _0.2 N Semiconductor layer electrode 44 n-type GaN semiconductor layer and n-type Ga _0.8 In _0.2
N semiconductor layer electrode 45 lead member (9) 46 lead member (10) 47 lead member (11) 48 GaN, Ga _0.8 In _0.2 N light emitting element chip 49 two-color LED 50 lead member (12) 51 lead member (13) ) 52 lead frame 53 lead member (14) 54 lead member (15)

Claims (2)

[Claims] 1. A transparent insulating substrate having at least one light-emitting layer composed of a combination of two or more selected from an n-type semiconductor layer, a p-type semiconductor layer and an i-type semiconductor layer, and a predetermined portion of the semiconductor layer. In an element chip having a planar structure having an electrode for applying a voltage to the light emitting layer, one electrode is directly connected to the lead member, and at least another electrode is connected to another lead member and a wire. A light emitting diode characterized by being connected. 2. One electrode of the element chip is directly connected to the lead member, and the other electrode is connected to the other lead member by a wire through a notch or a hole of the lead member. The light emitting diode according to claim 1, characterized in that
De.