JPH0674727A - Bonding wire inspection equipment - Google Patents

Bonding wire inspection equipment

Info

Publication number
JPH0674727A
JPH0674727A JP4250661A JP25066192A JPH0674727A JP H0674727 A JPH0674727 A JP H0674727A JP 4250661 A JP4250661 A JP 4250661A JP 25066192 A JP25066192 A JP 25066192A JP H0674727 A JPH0674727 A JP H0674727A
Authority
JP
Japan
Prior art keywords
bonding wire
wire
laser light
light
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4250661A
Other languages
Japanese (ja)
Other versions
JP3093048B2 (en
Inventor
Masato Nagura
正人 名倉
Masaki Kobayashi
正基 小林
Minokichi Ban
箕吉 伴
Hisashi Nakatsui
久 中津井
Kazuhisa Iizuka
和央 飯塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP04250661A priority Critical patent/JP3093048B2/en
Publication of JPH0674727A publication Critical patent/JPH0674727A/en
Application granted granted Critical
Publication of JP3093048B2 publication Critical patent/JP3093048B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/45001—Core members of the connector
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    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To increase the quantity of light to be received at a light receiving system by enhancing reflection efficiency on the surface of bonding wire. CONSTITUTION:S is a specimen, e.g. an IC subjected to wire bonding, mounted on an XY stage 1 controlled through a stage controller 8. A lens 5, a half mirror 3, and an objective lens 2 are arranged sequentially on an optical path connecting a light source 6 and the specimen S and an imaging element 4 is disposed oppositely to the specimen S with respect to the half mirror 3 while being connected with an image processor 10. Illuminators 7a, 7b are located at positions allowing oblique illumination of the specimen S from above. The light source 6 and the illuminators 7a, 7b are controlled through a microscope controller 9.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、ボンディングワイヤの
形状及び基準線を測定するボンディングワイヤ検査装置
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding wire inspection device for measuring the shape and reference line of a bonding wire.

【０００２】[0002]

【従来の技術】ＩＣチップとリードフレームのインナー
リードとを金線ワイヤで接続する所謂ボンディングワイ
ヤの良否検査においては、ワイヤループの最高点の高さ
を測定管理することが重要である。2. Description of the Related Art It is important to measure and control the height of the highest point of a wire loop in the so-called quality inspection of a so-called bonding wire which connects an IC chip and an inner lead of a lead frame with a gold wire.

【０００３】従来、このボンディングワイヤの検査方法
として、人間が目視で検査する方法や、二次元の画像処
理を行って検査する方法が用いられている。これは、図
５に示すようにリードフレームＬ上のチップＣとインナ
リードＩがボンディングワイヤＢで結線されたＩＣ基板
の上方に、撮像装置Ｆ、Ｇを所定の角度で配置し、これ
らの画像によってボンディングワイヤＢの形状を測定し
ている。Conventionally, as a method of inspecting this bonding wire, a method of visually inspecting by a human or a method of inspecting by performing two-dimensional image processing has been used. As shown in FIG. 5, the image pickup devices F and G are arranged at a predetermined angle above an IC substrate in which a chip C on a lead frame L and an inner lead I are connected by a bonding wire B. The shape of the bonding wire B is measured by.

【０００４】更に、三次元ワイヤのループ形状の検査方
法としては、２値化画像を用いて、ボンディングワイヤ
Ｂ上の焦点の合致した点を、基準点と比較演算する方法
も知られている。この場合において、比較演算するため
の基準点又は基準線は、ボンディングワイヤＢ、リード
フレームＬ、インナリードＩ等を何らかの照明系、例え
ばハロゲンランプ、ＬＥＤランプを用いて照明し、精度
の良い計測を行う必要がある。Further, as a method of inspecting the loop shape of a three-dimensional wire, there is also known a method of comparing and calculating a point on the bonding wire B where the focus is matched with a reference point by using a binarized image. In this case, the reference point or reference line for the comparison calculation is to illuminate the bonding wire B, the lead frame L, the inner lead I, etc. with some illumination system, for example, a halogen lamp or an LED lamp, and perform accurate measurement. There is a need to do.

【０００５】[0005]

【発明が解決しようとする課題】しかしながら人間の目
視検査では、検査員の体調、時刻等によって検査時間が
変化したり、疲労時には判断を誤ったり、検査の基準点
或いは基準線を正しく把えられなかったりする問題点が
ある。However, in the visual inspection of human beings, the inspection time changes depending on the physical condition of the inspector, the time, the judgment is wrong at the time of fatigue, and the reference point or the reference line of the inspection can be grasped correctly. There are problems that do not exist.

【０００６】また、二次元の画像処理ではＩＣで使用さ
れる金線ワイヤは、直径３０〜５０μｍと細く、しかも
断面が円形であるため、図６に示すようにボンディング
ワイヤＢの表面のうち、撮像装置Ｆ、Ｇが配置される上
方への反射に寄与する表面積は、全表面積の極く僅かで
あり、上方への反射光量もその表面積に比例して少なく
なる。更に、ボンディングワイヤＢが細い場合や、図７
に示すように照明光の照射方向とボンディングワイヤＢ
の表面及び撮像装置Ｆ、Ｇの方向とが相互に適切でない
場合も、撮像装置Ｆ、Ｇに入射する反射光量は減少す
る。このような上方への反射光量の減少は、測定におけ
るＳ／Ｎ比を劣化させて測定を不正確又は不能にしてし
まうという問題が生ずる。In the two-dimensional image processing, the gold wire used in the IC has a thin diameter of 30 to 50 μm and has a circular cross section. Therefore, as shown in FIG. The surface area that contributes to the upward reflection where the image pickup devices F and G are arranged is extremely small in the total surface area, and the amount of upward reflected light also decreases in proportion to the surface area. Further, when the bonding wire B is thin,
Illumination direction and bonding wire B
Even when the surface of the image pickup device and the directions of the image pickup devices F and G are not appropriate, the amount of reflected light incident on the image pickup devices F and G is reduced. Such a decrease in the amount of light reflected upward causes a problem that the S / N ratio in the measurement is deteriorated and the measurement becomes inaccurate or impossible.

【０００７】これを避けるため、照明光の照射方向をボ
ンディングワイヤＢの走行面の傾きに応じて変化させる
機構を設けたり、又は照明光源自体を強力にするため大
出力、大型のものを組込むことも考えられるが、照明系
の複雑化、大型化を招来するという欠点がある。更に、
基準点又は基準線と比較演算する場合には照明光が変動
したり、一様な照明ができなかったりして、正確な計測
ができないという欠点がある。In order to avoid this, a mechanism for changing the irradiation direction of the illuminating light according to the inclination of the traveling surface of the bonding wire B is provided, or a large output and a large illuminating light source is incorporated in order to strengthen the illuminating light source itself. However, there is a drawback that the illumination system becomes complicated and large. Furthermore,
When performing a comparison calculation with a reference point or a reference line, there are drawbacks in that the illumination light fluctuates or uniform illumination cannot be performed, and accurate measurement cannot be performed.

【０００８】そして、通常の照明系を用いた場合には、
ボンディングワイヤＢを含めリードフレームＬ、インナ
リードＩ等は立体的な形状をしているため、影を完全に
消すことは極めて困難である。これがまた、基準点又は
基準線を正確に検出するときの誤差要因となっている。When an ordinary illumination system is used,
Since the lead frame L, the inner lead I, and the like including the bonding wire B have a three-dimensional shape, it is extremely difficult to completely eliminate the shadow. This is also an error factor when accurately detecting the reference point or the reference line.

【０００９】本発明の目的は、正確な測定が可能なボン
ディングワイヤ検査装置を提供することにある。An object of the present invention is to provide a bonding wire inspecting device which enables accurate measurement.

【００１０】[0010]

【課題を解決するための手段】上述の目的を達成するた
めの第１のボンディングワイヤ検査装置は、ワイヤのボ
ンディング工程後のボンディング状態を検査する装置に
おいて、波長が０．８０μｍ〜０．９０μｍ以下の光束
を上方からボンディングワイヤに照射するものである。A first bonding wire inspection apparatus for achieving the above object is an apparatus for inspecting a bonding state after a wire bonding step, and has a wavelength of 0.80 μm to 0.90 μm or less. This is to irradiate the bonding wire with the above luminous flux from above.

【００１１】また、第２のボンディングワイヤ検査装置
は、ＩＣ素子のボール、クレセント、ボンディングワイ
ヤ等の形状及び寸法、位置を計測する装置において、レ
ーザー光により前記ボール、クレセント、ボンディング
ワイヤを照射し、反射率の変化から基準点或いは基準線
を定めるものである。The second bonding wire inspection apparatus is an apparatus for measuring the shape, dimensions, and position of the ball, crescent, bonding wire, etc. of the IC element, and irradiates the ball, crescent, bonding wire with laser light, The reference point or the reference line is determined from the change in reflectance.

【００１２】[0012]

【作用】第１のボンディングワイヤ検査装置は、ボンデ
ィングワイヤを照明する光源に特定の波長のレーザー光
やＬＥＤを用いることにより、ボンディングワイヤ表面
での反射効率を高めて受光系への反射光量を増加させ
る。また、第２のボンディングワイヤ検査装置は、ＩＣ
基板上に構成するリードフレーム、インナリード、チッ
プ上の電極、及びボンディングワイヤが種々の材質の金
属部材、例えば、銀、銅、アルミニウム、金等で構成さ
れていることに着目し、レーザー光を走査したときのボ
ンディングワイヤ等の反射率の変化を利用して高精度に
基準点或いは基準線を見出す。The first bonding wire inspection apparatus uses a laser beam or LED having a specific wavelength as a light source for illuminating the bonding wire, thereby increasing the reflection efficiency on the surface of the bonding wire and increasing the amount of light reflected to the light receiving system. Let In addition, the second bonding wire inspection device is an IC
Focusing on that the lead frame, the inner leads, the electrodes on the chip, and the bonding wires that are formed on the substrate are made of metal materials of various materials, for example, silver, copper, aluminum, gold, etc. A reference point or reference line is found with high accuracy by utilizing the change in the reflectance of the bonding wire or the like when scanning.

【００１３】[0013]

【実施例】本発明を図１〜図４に図示の実施例に基づい
て詳細に説明する。図１は第１の実施例を示す構成図で
あり、Ｓはワイヤボンダ等の装置によってワイヤがボン
ディング加工されたＩＣ等の被検体であり、ＸＹステー
ジ１上に設置されている。ＸＹステージ１の上方のＺ方
向には、対物レンズ２、ハーフミラー３、撮像素子４が
順次に配置され、ハーフミラー３の入射方向にはレンズ
５、光源６が順次に設けられている。また、ＸＹステー
ジ１の斜め上方の２方向には、それぞれ照明装置７ａ、
７ｂが設置されている。ＸＹステージ１はステージコン
トローラ８に接続され、光源６及び照明装置７ａ、７ｂ
は顕微鏡コントローラ９に接続されている。撮像素子４
の出力は画像処理装置１０に接続され、ステージコント
ローラ８、顕微鏡コントローラ９、画像処理装置１０は
中央制御装置１１に接続され、更に中央制御装置１１に
は表示装置１２が接続されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail with reference to the embodiments shown in FIGS. FIG. 1 is a configuration diagram showing a first embodiment, and S is an object such as an IC having a wire bonded by an apparatus such as a wire bonder, which is installed on an XY stage 1. In the Z direction above the XY stage 1, the objective lens 2, the half mirror 3, and the image sensor 4 are sequentially arranged, and the lens 5 and the light source 6 are sequentially arranged in the incident direction of the half mirror 3. Further, in the two directions obliquely above the XY stage 1, the illumination devices 7a, 7a,
7b is installed. The XY stage 1 is connected to the stage controller 8, and is connected to the light source 6 and the illumination devices 7a and 7b.
Is connected to the microscope controller 9. Image sensor 4
Is connected to the image processing device 10, the stage controller 8, the microscope controller 9, and the image processing device 10 are connected to the central control device 11, and the central control device 11 is connected to the display device 12.

【００１４】ここで、照明装置７ａ、７ｂは波長０．８
０μｍ〜０．９０μｍの光を発生するレーザー光源又Ｌ
ＥＤ光源、及びこれらの光源からの光束を空間的に拡散
させ、かつ被検体Ｓに対して一定の角度で入射させる拡
散材により構成されている。この拡散材には、アクリル
樹脂を半球状に加工し、内面を粗面仕上げしたもの等が
使用できる。Here, the illumination devices 7a and 7b have a wavelength of 0.8.
Laser light source or L for generating light of 0 μm to 0.90 μm
It is composed of an ED light source and a diffusing material that diffuses the light fluxes from these light sources spatially and makes them incident on the subject S at a constant angle. As the diffusing material, an acrylic resin processed into a hemispherical shape and the inner surface of which is roughened can be used.

【００１５】レーザー光源としては、半導体レーザーで
は素材、Ｉｎ1-x Ｇａx Ｐ、ＡｌxＧａ1-x Ａs やＧa
Ａs1-xＰx 等を調整することで得られる。また、ＨＩＴ
Ｃ等の色素レーザー光を用いてもよいが、照明系の小型
化、簡易化の観点から半導体レーザー光の方が実施によ
り適している。As the laser light source, a semiconductor laser is made of a material such as In 1-x Ga x P, Al x Ga 1-x As or Ga.
It can be obtained by adjusting As 1-x P x and the like. Also, HIT
A dye laser light such as C may be used, but a semiconductor laser light is more suitable for implementation from the viewpoint of downsizing and simplification of the illumination system.

【００１６】光源６から射出された光束は、レンズ５に
よって集光された後にハーフミラー３で反射され、対物
レンズ２を通り、ステージコントローラ８によって制御
されているＸＹステージ１上の被検体Ｓを走査する。ま
た、照明装置７ａ、７ｂによっても被検体Ｓを走査する
ことができる。被検体Ｓを走査した光は、再びハーフミ
ラー３を通った後に、撮像素子４によって撮像され画像
処理装置１０に送られる。The light beam emitted from the light source 6 is condensed by the lens 5, reflected by the half mirror 3, passes through the objective lens 2, and passes through the subject S on the XY stage 1 controlled by the stage controller 8. To scan. The subject S can also be scanned by the illumination devices 7a and 7b. The light that scans the subject S passes through the half mirror 3 again, and then is imaged by the image sensor 4 and sent to the image processing apparatus 10.

【００１７】先ず、光源６を発光させて被検体Ｓを落射
照明し、被検体Ｓ上の基準位置パターンを撮像素子４に
よって映像として把え、パターンが所定の位置に一致す
るように、ステージコントローラ８の制御でＸＹステー
ジ１を移動させる。First, the light source 6 is caused to emit light to epi-illuminate the subject S, the reference position pattern on the subject S is grasped as an image by the image pickup device 4, and the stage controller is arranged so that the pattern coincides with a predetermined position. The XY stage 1 is moved under the control of 8.

【００１８】基準位置パターンとボンディングワイヤと
の相対位置関係は予め画像処理装置１０内に記憶されて
おり、ボンディングワイヤの映像が撮像素子４の視野内
に把えられるように、再びＸＹステージ１を移動させた
後に次の検査に工程に移る。The relative positional relationship between the reference position pattern and the bonding wire is stored in advance in the image processing apparatus 10, and the XY stage 1 is set again so that the image of the bonding wire can be grasped within the visual field of the image pickup device 4. After moving, move to the next inspection step.

【００１９】光源６を消灯し、照明装置７ａ、７ｂを同
時又は逐次に一方ずつ点灯し、撮像素子４によりワイヤ
及びワイヤクレセントとの映像を取り込む。この際に、
必要に応じて対物レンズ２を上下に移動させて合焦像を
得るための所謂オートフォーカス走査を行う。続いて、
撮像素子４により把えられた映像情報を画像処理装置１
０に送り、この情報を処理してワイヤの高さ、曲りの有
無、ワイヤクレセントの有無、位置、寸法等の検査を行
う。The light source 6 is turned off, and the illumination devices 7a and 7b are turned on simultaneously or sequentially one by one, and the image pickup device 4 captures an image of the wire and the wire crescent. At this time,
The so-called autofocus scanning for obtaining the focused image is performed by moving the objective lens 2 up and down as necessary. continue,
The image processing device 1 receives the video information captured by the image sensor 4.
0, and this information is processed to inspect the height of the wire, the presence or absence of bending, the presence or absence of wire crescent, the position, the dimensions, and the like.

【００２０】最後に、これらの検査結果を表示装置１２
に表示したり、別のコンピュータに検査結果を通信ライ
ンを通して伝送する。以上の操作を各ボンディングワイ
ヤごとに、或いは何本かのボンディングワイヤをまとめ
て同時に行い、これを全てのボンディングワイヤについ
て繰り返す。Finally, the display device 12 displays these inspection results.
Or display the test result to another computer via communication line. The above operation is performed for each bonding wire or for several bonding wires at the same time, and this is repeated for all bonding wires.

【００２１】この実施例では、照明装置７ａ、７ｂは被
検体Ｓの斜め上方から照明光を照射してボンディングワ
イヤの有無、形状及びワイヤクレセントの位置、寸法、
有無をレーザー光により検査しているが、ワイヤボール
の形状、寸法を検査する場合は、光源６に前述のレーザ
ー光源を用いて、照明装置７ａ、７ｂを消灯した状態で
先の実施例と同様に検査を行うこともできる。In this embodiment, the illuminating devices 7a and 7b irradiate the subject S with illumination light obliquely from above to determine whether or not there is a bonding wire, the shape, and the position and size of the wire crescent.
Although the presence or absence is inspected by laser light, when inspecting the shape and size of the wire ball, the above-mentioned laser light source is used as the light source 6, and the illumination devices 7a and 7b are turned off in the same manner as in the previous embodiment. You can also inspect.

【００２２】また、半導体レーザーの代りにＬＥＤ光源
を用いることができ、コヒーレントの問題を除けば金線
に対する反射率は極めて高く、基本的に半導体レーザー
を用いた場合と変るところはない。An LED light source can be used instead of the semiconductor laser, and the reflectance with respect to the gold wire is extremely high except for the problem of coherence, and basically there is no difference from the case of using the semiconductor laser.

【００２３】図２は第２の実施例を示している。被検体
であるチップＣはワイヤボール、クレセント、ボンディ
ングワイヤＢ等が配置されるＩＣチップであり、ＸＹス
テージ２０上に載置されている。また、チップＣの斜め
上方には照明装置２１とチップＣの表面を走査するレー
ザー光源２２が設けられている。ＸＹステージ２０の上
方にはカメラ２３が設置され、その高さは高さ制御装置
２４によって制御されている。カメラ２３には画像処理
装置２５が画像を受けるように接続されている。高さ制
御装置２４、画像処理装置２５、及びＸＹステージ２０
は中央制御装置２６に接続され、中央制御装置２６には
入力装置２７と表示装置２８が接続されている。FIG. 2 shows a second embodiment. A chip C, which is a subject, is an IC chip on which a wire ball, a crescent, a bonding wire B, and the like are arranged, and is mounted on the XY stage 20. Further, an illumination device 21 and a laser light source 22 for scanning the surface of the chip C are provided obliquely above the chip C. A camera 23 is installed above the XY stage 20, and its height is controlled by a height controller 24. An image processing device 25 is connected to the camera 23 so as to receive an image. Height control device 24, image processing device 25, and XY stage 20
Is connected to a central controller 26, and an input device 27 and a display device 28 are connected to the central controller 26.

【００２４】カメラ２３により撮像された画像は、画像
処理装置２５で焦点の合っている度合いを計算し、その
結果を基に中央制御装置２６でボンディングワイヤＢの
ループの形状を計算し、表示装置２８上に表示する。ボ
ンディングワイヤＢの形状のの計算方法は、例えば図３
に示すようにカメラ２３における異なるフォーカス面F1
〜F5はチップＣの表面を基準として、入力装置２７から
予め設定された高さに、高さ制御装置２４を用いてカメ
ラ２３を移動することによって設定される。そして、或
るフォーカス面で撮影された画像を輝度信号として輝度
とｘ方向の関係を求める。ここで、ｘ方向に直交するｙ
方向については積分してもよいし、ｙ方向の中心を代表
させてもよい。The image picked up by the camera 23 is calculated by the image processing device 25 for the degree of focus, and based on the result, the central controller 26 calculates the shape of the loop of the bonding wire B and the display device. Display on 28. The method of calculating the shape of the bonding wire B is shown in FIG.
As shown in FIG.
.About.F5 are set by moving the camera 23 using the height control device 24 to a preset height from the input device 27 with the surface of the chip C as a reference. Then, the relationship between the brightness and the x direction is obtained using the image captured on a certain focus plane as the brightness signal. Here, y orthogonal to the x direction
The direction may be integrated, or the center in the y direction may be represented.

【００２５】求められた輝度とｘ方向との関係から、フ
ォーカスが合っていれば輝度が大きく輝度変化も鮮明で
あるが、デフォーカスの場合は輝度も低く輝度変化もブ
ロードである。そして、フォーカスが合っている場合
を、輝度のピーク値として計測することができる。From the relationship between the obtained brightness and the x direction, the brightness is large and the brightness change is clear when the focus is achieved, but the brightness is low and the brightness change is broad when the focus is defocused. Then, when the focus is achieved, it can be measured as the peak value of the luminance.

【００２６】検査時には、チップＣの表面はレーザー光
源２２によって走査される。ここで、レーザー光はＨｅ
−Ｎｅレーザー光（出力０．５ｍＷ、ビーム径０．８μ
ｍ）を用い、６３２８オングストロームの赤色レーザー
光で照射する。インナリードＩ上には銀の蒸着膜が極め
て薄く形成されており、ボンディングワイヤＢは金線で
ある。そこで、Ｈｅ−Ｎｅレーザー光を照射すると、イ
ンナリードＩのＨｅ−Ｎｅレーザー光に対する反射率は
９７％であるが、図４に示すようにボンディングワイヤ
Ｂの反射率は８４％であるため、インナリードＩ及びパ
ッド部分をＨｅ−Ｎｅレーザー光で走査すると９７％の
反射率を維持し、リードワイヤ部分を過ぎると著しく反
射率が低下する。At the time of inspection, the surface of the chip C is scanned by the laser light source 22. Here, the laser light is He
-Ne laser light (output 0.5mW, beam diameter 0.8μ
m), and irradiate with 6328 angstrom red laser light. A silver vapor deposition film is formed extremely thin on the inner lead I, and the bonding wire B is a gold wire. Then, when the He-Ne laser light is irradiated, the reflectance of the inner lead I with respect to the He-Ne laser light is 97%, but the reflectance of the bonding wire B is 84% as shown in FIG. When the lead I and the pad portion are scanned with the He—Ne laser light, the reflectance is maintained at 97%, and the reflectance is significantly reduced after passing the lead wire portion.

【００２７】従って、縦方向に並んだインナリードＩの
端面での反射率の急激な変化をもって基準線とすること
が可能であり、０．８μｍの精度で計測が可能である。
また、ボンディングワイヤＢに対してパッドとボール部
分の境界を基準点として計測することも可能である。レ
ーザー光源２２の反射光を受光する位置に図示しない受
光素子を設置してあり、切換スイッチ等によりＩＣパタ
ーン画像と反射率変化とを表示装置３５に個別又は同時
に表示することができる。このようにして、反射率の変
化から例えば基準面を正確に求めることができる。Therefore, a sharp change in the reflectance at the end faces of the inner leads I arranged in the vertical direction can be used as the reference line, and measurement can be performed with an accuracy of 0.8 μm.
Further, it is also possible to measure the boundary between the pad and the ball portion with respect to the bonding wire B as a reference point. A light receiving element (not shown) is installed at a position where the reflected light of the laser light source 22 is received, and the IC pattern image and the reflectance change can be displayed individually or simultaneously on the display device 35 by a changeover switch or the like. In this way, for example, the reference plane can be accurately obtained from the change in reflectance.

【００２８】他の実施例として、電極がアルミニウムで
構成されている場合に、Ｈｅ−Ｎｅレーザー光の照射に
対する反射率は９２％に達する。電極構成部分からＨｅ
−Ｎｅレーザー光の照射がずれると、他の金属や絶縁層
等に照射されるので、反射率は著しく低下する。そこ
で、電極配列を基準線として選択し、本来、ボンディン
グワイヤ装置で測定すべきであったパッド状のボール、
及びボンディングワイヤＢ、或いはクレセントの正確な
形状と位置を計測することができる。As another example, when the electrode is made of aluminum, the reflectance with respect to the irradiation of He-Ne laser light reaches 92%. He from the electrode component
If the irradiation of the —Ne laser beam is deviated, the other metal, the insulating layer, or the like is irradiated, so that the reflectance is significantly reduced. Therefore, by selecting the electrode array as the reference line, the pad-shaped ball that should have been originally measured by the bonding wire device,
Also, the accurate shape and position of the bonding wire B or the crescent can be measured.

【００２９】特に、レーザー光の照射によって基準線を
見い出す場合には、落射照明或いはリング照明、更には
暗視野照明の何れの照明方法でも影部分が存在し、正確
な基準線を見い出すことは難しく誤差が生ずる。In particular, when a reference line is found by irradiating a laser beam, there is a shadow portion in any of illumination methods such as epi-illumination, ring illumination and dark field illumination, and it is difficult to find an accurate reference line. There is an error.

【００３０】しかし本実施例の場合は、第１の実施例の
場合のように断面に垂直な方向にレーザー光を照射しな
くとも、斜め方向にしても正確性を損うものではない。However, in the case of the present embodiment, even if the laser beam is not irradiated in the direction perpendicular to the cross section as in the case of the first embodiment, the accuracy is not deteriorated even in the oblique direction.

【００３１】この第２の実施例においては、レーザー光
をＨｅ−Ｎｅレーザー光としたが、他のレーザー光、例
えばアルゴンレーザー光（波長４８８０オングストロー
ム）で実施した場合について説明する。 In the second embodiment, the He--Ne laser light is used as the laser light, but a case will be described in which the laser light is used as another laser light, for example, an argon laser light (wavelength 4880 angstrom).

【００３２】ＩＣパターンで使用される殆どの金属構成
部材に対するアルゴンレーザー光の反射率は上記の通り
であり、アルゴンレーザー光によってもその反射率の違
いを利用することができることが分かる。The reflectance of the argon laser light with respect to most of the metal components used in the IC pattern is as described above, and it can be seen that the difference in the reflectance can also be utilized by the argon laser light.

【００３３】また、１種類のレーザー光だけはなく、Ｈ
ｅ−Ｃｄレーザー光又はＡｒレーザー光等の複数のレー
ザー光を組合わせて用いることも、被検体に用いられる
材料によっては有効である。Further, not only one kind of laser light but H
It is also effective to use a combination of a plurality of laser lights such as e-Cd laser light or Ar laser light depending on the material used for the subject.

【００３４】なお、ＩＣ基板の電極等が銅で構成されて
いる場合に、Ｈｅ−Ｎｅレーザー照射ドライブを使用す
ると、反射率は約７０％になる。従って、Ｈｅ−Ｎｅレ
ーザー光の照射により、このように構成部材が金、銀、
アルミニウム、銅等によってそれぞれ反射率が異なるた
め、これらの部材が隣接して構成されたＩＣパターンで
あっても誤りなく、基準点又は基準線を容易に見い出す
ことができる。When the He--Ne laser irradiation drive is used when the electrodes of the IC substrate are made of copper, the reflectance becomes about 70%. Therefore, by irradiation with He-Ne laser light, the constituent members are
Since the reflectance differs depending on aluminum, copper, etc., even if the IC patterns are formed by adjoining these members, the reference point or the reference line can be easily found without error.

【００３５】[0035]

【発明の効果】以上説明したように第１発明に係るボン
ディングワイヤ検査装置は、照明装置及び光源に波長
０．８０〜０．９０μｍ以下のレーザー光やＬＥＤを用
いることにより、ボンディングワイヤからの反射率は従
来のＨｅ−Ｎｅレーザー光に比べて高くなり、従来検査
が不可能であった細いワイヤも検査でき、また斜上方照
明装置の設置角度もワイヤ走行方向による影響を受け難
くなり、ボンディングワイヤの走行方向、形状が多少異
なっていてもその影響が少なく、安定した検査結果が得
られる。As described above, the bonding wire inspection apparatus according to the first invention uses the laser light or the LED having the wavelength of 0.80 to 0.90 μm or less for the illumination device and the light source, so that the reflection from the bonding wire can be prevented. The rate is higher than that of conventional He-Ne laser light, and it is possible to inspect thin wires that were previously impossible to inspect, and the installation angle of the oblique upper illumination device is less affected by the wire traveling direction. Even if the traveling direction and shape of the are slightly different, the influence is small and stable inspection results can be obtained.

【００３６】また、第２発明に係るボンディングワイヤ
検査装置は、Ｈｅ−Ｎｅレーザー光やＡｒレーザー光等
の単波長に対するＩＣパターンに用いられている金属の
反射率の違いを利用することによって、測定に関わる基
準点及び基準線を正確に求めることが可能になる。The bonding wire inspection apparatus according to the second aspect of the present invention makes a measurement by utilizing the difference in the reflectance of the metal used in the IC pattern for a single wavelength such as He-Ne laser light or Ar laser light. It becomes possible to accurately obtain the reference point and the reference line related to.

【図面の簡単な説明】[Brief description of drawings]

【図１】第１の実施例の構成図である。FIG. 1 is a configuration diagram of a first embodiment.

【図２】第２の実施例の構成図である。FIG. 2 is a configuration diagram of a second embodiment.

【図３】ボンディングワイヤの形状の計算方法の説明図
である。FIG. 3 is an explanatory diagram of a method for calculating the shape of a bonding wire.

【図４】金線ワイヤの波長−反射率の関係の特性図であ
る。FIG. 4 is a characteristic diagram of a wavelength-reflectance relationship of a gold wire.

【図５】ＩＣの斜視図である。FIG. 5 is a perspective view of an IC.

【図６】ワイヤに通常の照明を行った場合の説明図であ
る。FIG. 6 is an explanatory diagram of a case where a wire is normally illuminated.

【図７】ワイヤに通常の照明を行った場合の説明図であ
る。FIG. 7 is an explanatory diagram when a wire is normally illuminated.

【符号の説明】 １、２０ ＸＹステージ ４ 撮像素子 ６ 光源 ７、２１ 照明装置 １１、２６ 中央制御装置 １２、２８ 表示装置 ２２ レーザー光源 ２３ テレビカメラ ２４ 高さ制御装置[Explanation of Codes] 1, 20 XY stage 4 Imaging device 6 Light source 7, 21 Illumination device 11, 26 Central control device 12, 28 Display device 22 Laser light source 23 Television camera 24 Height control device

───────────────────────────────────────────────────── フロントページの続き (72)発明者 中津井 久 神奈川県川崎市中原区今井上町53番地 キ ヤノン株式会社小杉事業所内 (72)発明者 飯塚 和央 神奈川県川崎市中原区今井上町53番地 キ ヤノン株式会社小杉事業所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Hisashi Nakatsui, 53 Imaiue-cho, Nakahara-ku, Kawasaki-shi, Kanagawa Canon Inc., Kosugi Plant (72) Inventor, Kazuo Iizuka, 53, Imaiue-machi, Nakahara-ku, Kawasaki-shi, Kanagawa Inside the Kosugi Plant of Canon Inc.

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】 ワイヤのボンディング工程後のボンディ
ング状態を検査する装置において、波長が０．８０μｍ
〜０．９０μｍ以下の光束を上方からボンディングワイ
ヤに照射することを特徴とするボンディングワイヤ検査
装置。1. A device for inspecting a bonding state after a wire bonding process has a wavelength of 0.80 μm.
A bonding wire inspection apparatus, which irradiates a bonding wire with a light flux of ˜0.90 μm or less from above. 【請求項２】 ＩＣ素子のボール、クレセント、ボンデ
ィングワイヤ等の形状及び寸法、位置を計測する装置に
おいて、レーザー光により前記ボール、クレセント、ボ
ンディングワイヤを照射し、反射率の変化から基準点或
いは基準線を定めることを特徴とするボンディングワイ
ヤ検査装置。2. An apparatus for measuring the shape, size, and position of a ball, a crescent, a bonding wire, etc. of an IC element, irradiating the ball, the crescent, and the bonding wire with a laser beam to change a reflectance to a reference point or a reference point. Bonding wire inspection device characterized by defining a wire. 【請求項３】 前記レーザー光を他の照明光と組合わせ
て使用する請求項２に記載のボンディングワイヤ検査装
置。3. The bonding wire inspection apparatus according to claim 2, wherein the laser light is used in combination with other illumination light. 【請求項４】 前記レーザー光をＨｅ−Ｎｅレーザー光
とする請求項２に記載のボンディングワイヤ検査装置。4. The bonding wire inspection apparatus according to claim 2, wherein the laser light is He—Ne laser light.
JP04250661A 1992-08-26 1992-08-26 Bonding wire inspection device Expired - Fee Related JP3093048B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP04250661A JP3093048B2 (en) 1992-08-26 1992-08-26 Bonding wire inspection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04250661A JP3093048B2 (en) 1992-08-26 1992-08-26 Bonding wire inspection device

Publications (2)

Publication Number Publication Date
JPH0674727A true JPH0674727A (en) 1994-03-18
JP3093048B2 JP3093048B2 (en) 2000-10-03

Family

ID=17211170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04250661A Expired - Fee Related JP3093048B2 (en) 1992-08-26 1992-08-26 Bonding wire inspection device

Country Status (1)

Country Link
JP (1) JP3093048B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112179920A (en) * 2020-11-29 2021-01-05 惠州高视科技有限公司 Method and system for detecting chip bonding wire defects

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112179920A (en) * 2020-11-29 2021-01-05 惠州高视科技有限公司 Method and system for detecting chip bonding wire defects

Also Published As

Publication number Publication date
JP3093048B2 (en) 2000-10-03

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