JPH0668428A - Magneto-resistance effect type head - Google Patents
Magneto-resistance effect type headInfo
- Publication number
- JPH0668428A JPH0668428A JP22146992A JP22146992A JPH0668428A JP H0668428 A JPH0668428 A JP H0668428A JP 22146992 A JP22146992 A JP 22146992A JP 22146992 A JP22146992 A JP 22146992A JP H0668428 A JPH0668428 A JP H0668428A
- Authority
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- Prior art keywords
- film
- magnetoresistive
- magneto
- soft magnetic
- resistance effect
- Prior art date
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は磁気抵抗効果型ヘッドに
係り、特に、磁気抵抗効果素子の抵抗値の変化により磁
気情報の再生等の処理を行なう磁気抵抗効果型ヘッドに
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive head, and more particularly to a magnetoresistive head for performing processing such as reproduction of magnetic information by changing the resistance value of a magnetoresistive element.
【０００２】[0002]
【従来の技術】近年、コンピュータ等の磁気記録装置の
磁気記録媒体であるハードディスクに情報の記録、再生
等の磁気情報処理を行なうための磁気ヘッドにおいて
は、静止状態では、磁気記録媒体に接触し、動作状態で
磁気記録媒体から浮上して所定の磁気記録または再生を
行なう浮上式の磁気ヘッドが多く用いられており、近
年、このような浮上式磁気ヘッドとして、磁気抵抗効果
素子（ＭＲ素子）を用いた磁気抵抗効果型ヘッド（ＭＲ
ヘッド）が多く用いられている。2. Description of the Related Art In recent years, a magnetic head for performing magnetic information processing such as recording and reproducing of information on a hard disk, which is a magnetic recording medium of a magnetic recording device such as a computer, contacts the magnetic recording medium in a stationary state. A floating magnetic head that floats from a magnetic recording medium in an operating state to perform predetermined magnetic recording or reproduction is widely used. In recent years, as such a floating magnetic head, a magnetoresistive effect element (MR element) has been used. Magnetoresistive head (MR
Head) is often used.
【０００３】図３および図４はこのような従来の磁気抵
抗効果型ヘッドを示したもので、磁気抵抗効果型ヘッド
１は、磁気記録媒体２の図示しないトラック幅とほぼ同
様の幅寸法を有する磁気抵抗効果素子３を有しており、
この磁気抵抗効果素子３は、磁気記録媒体に対して垂直
に、かつ、磁気記録媒体２のトラック幅方向に位置する
ように配設されている。また、この磁気抵抗効果素子３
は、磁気抵抗効果膜４を有しており、この磁気抵抗効果
膜４の一面側には、Ｔａ等の非磁性材料からなる中間層
５を介して軟磁性膜（ＳＡＬ膜）６が形成されている。
また、前記磁気抵抗効果素子３の前記中間層５の形成側
面の反対側面であってその両端部分には、それぞれ反強
磁性膜７が形成されており、この反強磁性膜７部分に
は、前記磁気抵抗効果素子３の磁気抵抗効果膜４に一定
の電圧を印加して磁気抵抗効果膜４と軟磁性膜６とにバ
イアス磁界をかけるとともに、磁気抵抗効果膜４の抵抗
値の変化を取り出すためのリード線８がそれぞれ接続さ
れている。FIGS. 3 and 4 show such a conventional magnetoresistive head. The magnetoresistive head 1 has substantially the same width as the track width (not shown) of the magnetic recording medium 2. It has a magnetoresistive element 3,
The magnetoresistive effect element 3 is arranged perpendicularly to the magnetic recording medium and in the track width direction of the magnetic recording medium 2. In addition, this magnetoresistive effect element 3
Has a magnetoresistive effect film 4, and a soft magnetic film (SAL film) 6 is formed on one surface of the magnetoresistive effect film 4 with an intermediate layer 5 made of a nonmagnetic material such as Ta interposed therebetween. ing.
Further, an antiferromagnetic film 7 is formed on both sides of the side surface of the magnetoresistive effect element 3 opposite to the side surface on which the intermediate layer 5 is formed. A constant voltage is applied to the magnetoresistive effect film 4 of the magnetoresistive effect element 3 to apply a bias magnetic field to the magnetoresistive effect film 4 and the soft magnetic film 6, and a change in the resistance value of the magnetoresistive effect film 4 is extracted. Lead wires 8 are connected to each.
【０００４】さらに、前記磁気抵抗効果素子３の両側に
は、この磁気抵抗効果素子３により検出する磁界の空間
分解能を高めるために前記磁気抵抗効果素子３の幅寸法
に対して大きな幅寸法を有する一対のシールド９，９が
所定間隔を有するように配設されている。Further, both sides of the magnetoresistive effect element 3 have a width dimension larger than the width dimension of the magnetoresistive effect element 3 in order to enhance the spatial resolution of the magnetic field detected by the magnetoresistive effect element 3. The pair of shields 9, 9 are arranged so as to have a predetermined interval.
【０００５】このような従来の磁気抵抗効果型ヘッドに
おいては、この磁気抵抗効果型ヘッド１を、例えば、ハ
ードディスク等の磁気記録媒体２の磁気記録面に摺動さ
せながら、前記リード線８を介して磁気抵抗効果膜４に
所定の電圧を印加して、図３中矢印で示すように、磁気
抵抗効果素子３の磁気抵抗効果膜４と軟磁性膜６とを通
るバイアス磁界をかけることにより、磁気記録媒体２の
各トラックから生じる磁界により前記磁気抵抗効果素子
３の抵抗値が変化し、この抵抗値の変化に応じて磁界の
強さを検出することにより、所定の磁気情報を再生する
ようになっている。In such a conventional magnetoresistive head, the magnetoresistive head 1 is slid on the magnetic recording surface of the magnetic recording medium 2 such as a hard disk and the like through the lead wire 8. By applying a predetermined voltage to the magnetoresistive effect film 4 and applying a bias magnetic field passing through the magnetoresistive effect film 4 and the soft magnetic film 6 of the magnetoresistive effect element 3 as shown by an arrow in FIG. The resistance value of the magnetoresistive effect element 3 changes due to the magnetic field generated from each track of the magnetic recording medium 2, and predetermined magnetic information is reproduced by detecting the strength of the magnetic field according to the change of the resistance value. It has become.
【０００６】そして、前記磁気抵抗効果型ヘッド１にお
いては、磁気抵抗効果膜４に形成した反強磁性膜７によ
り、磁気抵抗効果膜４の両端部分において磁気記録媒体
２に対して平行方向の横バイアスを発生させ、これによ
り、磁気抵抗効果膜４全体で単一ドメイン化を図ること
が可能となり、再生特性を向上させるとともに、バルク
ハウゼンノイズを軽減させることができるようになって
いる。In the magnetoresistive head 1, the antiferromagnetic film 7 formed on the magnetoresistive film 4 causes the both ends of the magnetoresistive film 4 to be parallel to the magnetic recording medium 2. By generating a bias, the magnetoresistive effect film 4 as a whole can be made into a single domain, the reproduction characteristics can be improved, and Barkhausen noise can be reduced.
【０００７】[0007]
【発明が解決しようとする課題】しかし、高密度化がさ
らに進み、トラック幅が減少し、再生出力が低下してく
ると、さらに、バルクハウゼンノイズを減らすことが必
要になる。前記従来の磁気抵抗効果型ヘッドでは、磁気
抵抗効果膜４の一面両端部分に形成した反強磁性膜７に
より磁気抵抗効果膜４の単一ドメイン化を図るようにし
ているが、前記磁気抵抗効果膜４に形成した反強磁性膜
７によっては、軟磁性膜６の単一ドメイン化を図ること
ができず、そのため、前記軟磁性膜６のドメイン構造や
動作時におけるドメイン変化等により、これにより、バ
イアス磁界が影響を受け、バイアス磁界に乱れが生じる
ことにより、出力にバルクハウゼンノイズが入り、再生
特性が低下するという問題を有している。However, as the density is further increased, the track width is reduced, and the reproduction output is reduced, it is necessary to further reduce Barkhausen noise. In the conventional magnetoresistive head, the anti-ferromagnetic films 7 formed on both end portions of one surface of the magnetoresistive film 4 are designed to make the magnetoresistive film 4 into a single domain. Due to the antiferromagnetic film 7 formed on the film 4, the soft magnetic film 6 cannot be made into a single domain. Therefore, due to the domain structure of the soft magnetic film 6 or the domain change during operation, As a result, the bias magnetic field is affected and the bias magnetic field is disturbed, so that Barkhausen noise is introduced into the output and the reproduction characteristic is deteriorated.
【０００８】本発明は前記した点に鑑みてなされたもの
で、磁気抵抗効果膜および軟磁性膜の単一ドメイン化を
図り、適正なバイアス磁界を形成することができ、磁気
特性の向上を図ることのできる磁気抵抗効果型ヘッドを
提供することを目的とするものである。The present invention has been made in view of the above-mentioned points, and the magnetoresistive film and the soft magnetic film can be formed into a single domain to form an appropriate bias magnetic field, thereby improving the magnetic characteristics. It is an object of the present invention to provide a magnetoresistive head capable of performing the above.
【０００９】[0009]
【課題を解決するための手段】前記目的を達成するため
本発明に係る磁気抵抗効果型ヘッドは、磁気抵抗効果膜
と軟磁性膜とを並設してなる磁気抵抗効果素子の両側に
一対のシールドを所定間隔を有するように配設し、前記
磁気抵抗効果膜にこの磁気抵抗効果膜に所定電圧を印加
して前記磁気抵抗効果膜と軟磁性膜との間にバイアス磁
界を発生させるリード線を接続してなる磁気抵抗効果型
ヘッドにおいて、前記磁気抵抗効果膜と軟磁性膜との間
に反強磁性膜を介設したことを特徴とするものである。In order to achieve the above object, a magnetoresistive head according to the present invention comprises a pair of magnetoresistive elements having a magnetoresistive film and a soft magnetic film arranged side by side. A lead wire in which shields are arranged with a predetermined distance, and a predetermined voltage is applied to the magnetoresistive effect film to generate a bias magnetic field between the magnetoresistive effect film and the soft magnetic film. In the magnetoresistive head having the above-mentioned structure, an antiferromagnetic film is provided between the magnetoresistive film and the soft magnetic film.
【００１０】[0010]
【作用】本発明の磁気抵抗効果型ヘッドによれば、磁気
抵抗効果膜と軟磁性膜との間に反強磁性膜を形成するよ
うにしているので、磁気抵抗効果膜のみならず、軟磁性
膜に横バイアスが発生し、この横バイアスにより磁気抵
抗効果膜および軟磁性膜の両方を単一ドメイン化するこ
とが可能となり、その結果、磁気抵抗効果膜と軟磁性膜
との両方でバルクハウゼンノイズの極めて小さい磁気抵
抗効果型ヘッドを提供できるものである。According to the magnetoresistive head of the present invention, since the antiferromagnetic film is formed between the magnetoresistive film and the soft magnetic film, not only the magnetoresistive film but also the soft magnetic film is formed. A lateral bias is generated in the film, and this lateral bias enables both the magnetoresistive film and the soft magnetic film to have a single domain, and as a result, Barkhausen in both the magnetoresistive film and the soft magnetic film. It is possible to provide a magnetoresistive head having extremely low noise.
【００１１】[0011]
【実施例】以下、本発明の実施例を図１および図２を参
照し、図３および図４と同一部分には同一符号を付して
説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. 1 and 2, and the same parts as those in FIGS.
【００１２】図１は本発明に係る磁気抵抗効果型ヘッド
の一実施例を示したもので、磁気抵抗効果型ヘッド１
は、図示しない磁気記録媒体に対して垂直に、かつ、磁
気記録媒体のトラック幅方向に位置するように配設され
る磁気抵抗効果素子３を有しており、この磁気抵抗効果
素子３は、磁気抵抗効果膜４およびこの磁気抵抗効果膜
４の一面側に配設された軟磁性膜６を有している。ま
た、本実施例においては、前記磁気抵抗効果膜４と軟磁
性膜６との間であって、前記磁気抵抗効果膜４の両端部
分には、それぞれ反強磁性膜７が介設されており、前記
磁気抵抗効果膜４と軟磁性膜６との間の前記各反強磁性
膜７の間部分には、非磁性材料からなる中間層５が形成
されている。FIG. 1 shows an embodiment of a magnetoresistive head according to the present invention.
Has a magnetoresistive effect element 3 arranged so as to be positioned perpendicular to a magnetic recording medium (not shown) and in the track width direction of the magnetic recording medium. It has a magnetoresistive film 4 and a soft magnetic film 6 arranged on one surface side of the magnetoresistive film 4. Further, in this embodiment, an antiferromagnetic film 7 is provided between the magnetoresistive effect film 4 and the soft magnetic film 6 and at both end portions of the magnetoresistive effect film 4. An intermediate layer 5 made of a non-magnetic material is formed between the magnetoresistive film 4 and the soft magnetic film 6 between the antiferromagnetic films 7.
【００１３】さらに、前記磁気抵抗効果膜４の他面側両
端部には、前記磁気抵抗効果素子３に一定の電圧を印加
するためのリード線８，８が接続されており、前記磁気
抵抗効果素子３の両側には、一対のシールド９，９が所
定間隔を有するように配設されている。Further, lead wires 8 for applying a constant voltage to the magnetoresistive effect element 3 are connected to both ends of the magnetoresistive effect film 4 on the other surface side, and the magnetoresistive effect is obtained. A pair of shields 9, 9 are arranged on both sides of the element 3 so as to have a predetermined interval.
【００１４】次に、本実施例の作用について説明する。Next, the operation of this embodiment will be described.
【００１５】本実施例においては、この磁気抵抗効果型
ヘッド１を、所定の磁気記録媒体の磁気記録面に摺動さ
せながら、前記磁気抵抗効果素子３の磁気抵抗効果膜４
と軟磁性膜６とを通るバイアス磁界をかけることによ
り、磁気記録媒体の各トラックから生じる磁界により前
記磁気抵抗効果素子３の抵抗値が変化し、この抵抗値の
変化に応じて磁界の強さを検出することにより、所定の
磁気情報を再生するようになっている。In the present embodiment, the magnetoresistive head 1 is slid on the magnetic recording surface of a predetermined magnetic recording medium while the magnetoresistive film 4 of the magnetoresistive element 3 is being slid.
By applying a bias magnetic field passing through the soft magnetic film 6 and the soft magnetic film 6, the resistance value of the magnetoresistive effect element 3 is changed by the magnetic field generated from each track of the magnetic recording medium, and the strength of the magnetic field is changed according to the change of the resistance value. Is detected, predetermined magnetic information is reproduced.
【００１６】この場合に、本実施例においては、磁気抵
抗効果膜４と軟磁性膜６との間の両端部分に反強磁性膜
７を形成するようにしているので、磁気抵抗効果膜４の
みならず、軟磁性膜６の両方において、横バイアスが磁
気抵抗効果膜４および軟磁性膜６を単一ドメイン状態に
することができるものである。In this case, in this embodiment, since the antiferromagnetic film 7 is formed at both end portions between the magnetoresistive effect film 4 and the soft magnetic film 6, only the magnetoresistive effect film 4 is formed. Of course, in both the soft magnetic films 6, the lateral bias can bring the magnetoresistive film 4 and the soft magnetic film 6 into a single domain state.
【００１７】したがって、本実施例においては、磁気抵
抗効果膜４と軟磁性膜６との間に反強磁性膜７を配設す
ることにより、磁気抵抗効果膜４および軟磁性膜６の単
一ドメイン化を図ることができるので、バルクハウゼン
ノイズ等の発生を適性に防止することができる。Therefore, in this embodiment, by disposing the antiferromagnetic film 7 between the magnetoresistive effect film 4 and the soft magnetic film 6, the magnetoresistive effect film 4 and the soft magnetic film 6 are united. Since domain formation can be achieved, it is possible to appropriately prevent Barkhausen noise and the like from occurring.
【００１８】また、図２は本発明の他の実施例を示した
もので、本実施例においては、磁気抵抗効果素子３の磁
気抵抗効果膜４と軟磁性膜６との間には、全面にわたっ
て反強磁性膜７が介設されており、非磁性材料からなる
中間層は形成されていない。FIG. 2 shows another embodiment of the present invention. In this embodiment, the entire surface between the magnetoresistive effect film 4 and the soft magnetic film 6 of the magnetoresistive effect element 3 is shown. The antiferromagnetic film 7 is provided over the entire surface, and no intermediate layer made of a nonmagnetic material is formed.
【００１９】その他の部分は、前記図１に示す実施例の
ものと同様であるため、同一部分には同一符号を付して
その説明を省略する。Since the other parts are the same as those of the embodiment shown in FIG. 1, the same parts are designated by the same reference numerals and the description thereof will be omitted.
【００２０】本実施例においても前記実施例と同様に、
磁気抵抗効果膜４と軟磁性膜６との間に反強磁性膜７を
形成するようにしているので、磁気抵抗効果膜４のみな
らず、軟磁性膜６の両方において横バイアスが磁気抵抗
効果膜４および軟磁性膜６を単一ドメイン化することが
できるものである。Also in this embodiment, similar to the above embodiment,
Since the antiferromagnetic film 7 is formed between the magnetoresistive effect film 4 and the soft magnetic film 6, the lateral bias causes the magnetoresistive effect not only in the magnetoresistive effect film 4 but also in the soft magnetic film 6. The film 4 and the soft magnetic film 6 can be made into a single domain.
【００２１】したがって、本実施例においても、バルク
ハウゼンノイズ等の発生を適性に防止することができ
る。Therefore, also in this embodiment, it is possible to properly prevent the generation of Barkhausen noise or the like.
【００２２】なお、本発明は前述した各実施例に限定さ
れるものではなく、必要に応じて種々変更することが可
能である。The present invention is not limited to the above-mentioned embodiments, but various modifications can be made as necessary.
【００２３】[0023]
【発明の効果】以上述べたように本発明に係る磁気抵抗
効果型ヘッドは、磁気抵抗効果膜と軟磁性膜との間に反
強磁性膜を配設することにより、磁気抵抗効果膜および
軟磁性膜の単一ドメイン化を図ることができるので、バ
ルクハウゼンノイズ等の発生を適性に防止することがで
きる等の効果を奏する。As described above, in the magnetoresistive head according to the present invention, by disposing the antiferromagnetic film between the magnetoresistive film and the soft magnetic film, the magnetoresistive film and the soft magnetic film are provided. Since the magnetic film can have a single domain, it is possible to appropriately prevent Barkhausen noise and the like.
【図１】本発明に係る磁気抵抗効果型ヘッドの一実施例
を示す平面図FIG. 1 is a plan view showing an embodiment of a magnetoresistive head according to the present invention.
【図２】本発明に係る磁気抵抗効果型ヘッドの他の実施
例を示す平面図FIG. 2 is a plan view showing another embodiment of the magnetoresistive head according to the present invention.
【図３】従来の磁気抵抗効果型ヘッドを示す側面図FIG. 3 is a side view showing a conventional magnetoresistive head.
【図４】図３の平面図FIG. 4 is a plan view of FIG.
１ 磁気抵抗効果型ヘッド ３ 磁気抵抗効果素子 ４ 磁気抵抗効果膜 ５ 中間層 ６ 軟磁性膜 ７ 反強磁性膜 ８ リード線 ９ シールド 1 Magnetoresistive Head 3 Magnetoresistive Element 4 Magnetoresistive Film 5 Intermediate Layer 6 Soft Magnetic Film 7 Antiferromagnetic Film 8 Lead Wire 9 Shield
Claims (1)
なる磁気抵抗効果素子の両側に一対のシールドを所定間
隔を有するように配設し、前記磁気抵抗効果膜にこの磁
気抵抗効果膜に所定電圧を印加して前記磁気抵抗効果膜
と軟磁性膜との間にバイアス磁界を発生させるリード線
を接続してなる磁気抵抗効果型ヘッドにおいて、前記磁
気抵抗効果膜と軟磁性膜との間に反強磁性膜を介設した
ことを特徴とする磁気抵抗効果型ヘッド。1. A pair of shields are arranged on both sides of a magnetoresistive effect element having a magnetoresistive effect film and a soft magnetic film arranged side by side so as to have a predetermined interval, and the magnetoresistive effect film is provided with the magnetoresistive effect film. A magnetoresistive effect type head in which a lead wire for generating a bias magnetic field is connected between the magnetoresistive effect film and the soft magnetic film by applying a predetermined voltage to the effect film. A magnetoresistive head having an antiferromagnetic film interposed between and.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22146992A JPH0668428A (en) | 1992-08-20 | 1992-08-20 | Magneto-resistance effect type head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22146992A JPH0668428A (en) | 1992-08-20 | 1992-08-20 | Magneto-resistance effect type head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0668428A true JPH0668428A (en) | 1994-03-11 |
Family
ID=16767207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22146992A Withdrawn JPH0668428A (en) | 1992-08-20 | 1992-08-20 | Magneto-resistance effect type head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0668428A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7959088B2 (en) | 2003-05-14 | 2011-06-14 | Methven Ltd. | Method and apparatus for producing droplet spray |
-
1992
- 1992-08-20 JP JP22146992A patent/JPH0668428A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7959088B2 (en) | 2003-05-14 | 2011-06-14 | Methven Ltd. | Method and apparatus for producing droplet spray |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19991102 |