JPH087234A - Magnetoresistance element - Google Patents
Magnetoresistance elementInfo
- Publication number
- JPH087234A JPH087234A JP6328971A JP32897194A JPH087234A JP H087234 A JPH087234 A JP H087234A JP 6328971 A JP6328971 A JP 6328971A JP 32897194 A JP32897194 A JP 32897194A JP H087234 A JPH087234 A JP H087234A
- Authority
- JP
- Japan
- Prior art keywords
- bias
- magnetoresistive element
- head
- magneto resistive
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 claims abstract description 23
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 abstract description 2
- 230000005292 diamagnetic effect Effects 0.000 abstract 1
- 230000005330 Barkhausen effect Effects 0.000 description 5
- 230000005381 magnetic domain Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- 229910015136 FeMn Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000005290 antiferromagnetic effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005347 demagnetization Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005316 antiferromagnetic exchange Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
- G11B5/3932—Magnetic biasing films
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/3113—Details for improving the magnetic domain structure or avoiding the formation or displacement of undesirable magnetic domains
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Magnetic Heads (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、磁気抵抗素子に関する
もので、詳しくは、情報記録装置に使用される磁気抵抗
型薄膜ヘッドの磁気抵抗素子を磁気的に閉鎖回路に似る
ように“Ｃ”字形に形成し、後位に位置する非磁性ギャ
ップに横方向のバイアス印加線（バイアスループないし
はバイアスコイル）を設置することにより、磁気抵抗素
子の中心感知部でバルクハイゼンノイズ（Barkhausen n
oise：再生時の雑音）の原因であるマルチ磁区（multi
domain：素子の横方向に存在する反磁界により生成され
る）の生成を抑制してヘッドの効率を向上させ、ノイズ
を減少させたものに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive element, more specifically, a "C" magnetically resembling a closed circuit in a magnetoresistive element of a magnetoresistive thin film head used in an information recording apparatus. By forming a lateral bias applying line (bias loop or bias coil) in the non-magnetic gap located at the rear, the Baruhausen noise (Barkhausen n
oise: Multi-domain (multi) that causes noise during playback
domain: generated by a demagnetizing field existing in the lateral direction of the element) to improve the efficiency of the head and reduce noise.
【０００２】[0002]
【従来の技術】一般的に、情報記録装置の高磁気記録密
度化、高性能化に従って、磁気ヘッドも従来に使用され
るフェライトヘッド、ＭＩＧヘッドの代わりに薄膜磁気
ヘッドをより好んで使用しており、特に再生特性が優秀
である磁気抵抗素子を用いた薄膜磁気貯蔵型ヘッドの需
要が同業種分野で最近急増しているが、前記磁気抵抗素
子は素子内に存在するマルチ磁区という磁区構造により
発生されるバルクハイゼンノイズという再生時の雑音特
性のため、ヘッド設計時、ヘッド効率を向上させ、ノイ
ズを減少させるのが主要研究対象であった。2. Description of the Related Art In general, in accordance with higher magnetic recording density and higher performance of information recording devices, a magnetic head is more preferably a thin film magnetic head instead of a conventionally used ferrite head or MIG head. In particular, the demand for thin-film magnetic storage type heads using magnetoresistive elements, which have particularly excellent reproducing characteristics, has recently increased rapidly in the same industry field, but the magnetoresistive elements are due to the magnetic domain structure of multiple magnetic domains existing in the element. Due to the noise characteristic of the generated Barkhausen noise during playback, the main research target was to improve head efficiency and reduce noise during head design.
【０００３】従来技術による磁気ヘッドの磁気抵抗素子
は、図２に示すように、直線形の磁気抵抗素子の横方向
に単磁区を形成するために磁気抵抗素子１１の両側に薄
膜のＦｅＭｎ合金系交換パターン１２、１３を設置した
ものである（図２（ａ）に示す。）。As shown in FIG. 2, the magnetoresistive element of the magnetic head according to the prior art is a thin film of FeMn alloy based on both sides of the magnetoresistive element 11 in order to form a single magnetic domain in the lateral direction of the linear magnetoresistive element. The replacement patterns 12 and 13 are installed (shown in FIG. 2A).
【０００４】一方、アメリカ合衆国特許第４，６６３，
６８５号には、磁気抵抗素子の両端部に反強磁性薄膜を
蒸着して横方向にバイアスを加えるようにした再生ヘッ
ドで、横方向のバイアスは素子の両端部の磁区状態を単
磁区状態に維持させるに充分であり、その結果、素子の
中央部も単磁区状態を維持し、かつ素子の中央部位に縦
方向のバイアスを加えるように素子の中央部には隔離さ
れた導電性素子（conductive element）を設置すること
により、磁気抵抗素子の感度を減らさずに磁気抵抗素子
のバルクハイゼンノイズ生成を減少させる内容が開示さ
れている。On the other hand, US Pat. No. 4,663,
No. 685 is a reproducing head in which an antiferromagnetic thin film is vapor-deposited on both ends of a magnetoresistive element to apply a bias in the lateral direction. The lateral bias changes the magnetic domain state at both ends of the element to a single domain state. Is sufficient to maintain a single domain state in the central part of the device, and a central part of the device is longitudinally biased by an isolated conductive element. By disposing the element), it is disclosed that the generation of the bulk Heisen noise of the magnetoresistive element is reduced without reducing the sensitivity of the magnetoresistive element.
【０００５】又、アメリカ合衆国特許第５，１５９，５
１１号には、磁気抵抗素子とこの素子の横方向及び縦方
向にバイアスを掛けるための導電体とから構成されるヘ
ッドで、磁気抵抗素子２１は、“１”字形に構成され、
バイアスコイル２２，２３は磁気抵抗素子２１を単磁区
状態に維持させ得るように素子の両端に設置されること
により、バルクハイゼンノイズの生成を減らしトラック
密度を高め得るという内容が開示されている（図２
（ｂ）に示す。）。US Pat. No. 5,159,5
No. 11 is a head composed of a magnetoresistive element and a conductor for applying a bias in the lateral and vertical directions of the element, and the magnetoresistive element 21 is formed in a "1" shape,
It is disclosed that the bias coils 22 and 23 are installed at both ends of the magnetoresistive element 21 so that the magnetoresistive element 21 can be maintained in a single magnetic domain state, so that generation of Barkhausen noise can be reduced and track density can be increased ( Figure 2
It shows in (b). ).
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、図２に
示す従来の磁気抵抗素子によると、図２（ａ）のもので
は、前記ＦｅＭｎ合金に腐食が発生して磁気抵抗素子の
信頼性が低下する問題点と、前記磁気抵抗素子内での横
方向脱磁界を減らすためには隣接トラックからのクロス
−トーク（cross-talk）効果の増加に関係がある素子の
長さ（ｌ１）対幅（ｈ１）の比が充分に大きくなければ
ならないが、構造上の限界点に直面して横方向バイアス
磁界の影響により磁気抵抗ヘッドの性能が低下し、磁気
抵抗素子１１と反強磁性パターン１２，１３間の交換効
果の強い温度依存性により周囲温度の増加につれてバル
クハイゼンノイズが増加する。However, according to the conventional magnetoresistive element shown in FIG. 2, in the one shown in FIG. 2A, the FeMn alloy is corroded and the reliability of the magnetoresistive element is lowered. The problem and the length (l 1 ) vs. width (1 1 ) of the device which is related to the increase of the cross-talk effect from the adjacent track in order to reduce the lateral demagnetization field in the magnetoresistive device. Although the ratio of h 1 ) must be sufficiently large, the performance of the magnetoresistive head deteriorates due to the influence of the lateral bias magnetic field in the face of the structural limit point, and the magnetoresistive element 11 and the antiferromagnetic pattern 12, Due to the strong temperature dependence of the exchange effect between 13, Barkhausen noise increases with increasing ambient temperature.
【０００７】そして、直線形の磁気抵抗素子２１の両端
部付近にバイアス印加線（バイアスループ；biasing lo
op）２２，２３を設置して（図２（ｂ）に示す）磁界を
可変させ得るが、これもやはり長さ（ｌ２）対幅
（ｈ２）の比を構造特性上大きくし得なくて脱磁界の影
響を完全に除去し得なく、磁気抵抗素子２１の両端部に
バイアス印加線２２，２３を設置することによる工程が
増大するので、ヘッドの製造収率が低下する問題点があ
った。さらに、バイアス印加線２２，２３の使用により
磁気抵抗ヘッドの空気保有面から磁気抵抗素子２１に屈
曲が生じてその性能が低下する問題点があった。A bias applying line (biasing loop; biasing lo) is provided near both ends of the linear magnetoresistive element 21.
op) 22 and 23 can be installed to change the magnetic field (shown in FIG. 2 (b)), but this also cannot increase the ratio of length (l 2 ) to width (h 2 ) due to structural characteristics. Therefore, the effect of demagnetizing field cannot be completely removed, and the number of steps for installing the bias applying lines 22 and 23 at both ends of the magnetoresistive element 21 increases. It was Further, there is a problem that the use of the bias applying lines 22 and 23 causes the magnetoresistive element 21 to bend from the air-holding surface of the magnetoresistive head, thereby deteriorating its performance.
【０００８】前記前者のアメリカ合衆国特許の磁気抵抗
素子によると、素子内の異方性磁界が大きくなって感度
が低下する問題点があった。According to the magnetoresistive element of the former United States patent, there is a problem that the anisotropic magnetic field in the element increases and the sensitivity decreases.
【０００９】又、前記後者のアメリカ合衆国特許の磁気
抵抗素子によると、素子内での異方性磁界が大きくて感
度が低く、シールドされた（ｓｈｉｅｌｄｅｄ）磁気抵
抗ヘッドにおいては磁気抵抗素子として使用できない問
題点があった。According to the magnetoresistive element of the latter US patent, the anisotropic magnetic field in the element is large and the sensitivity is low, so that it cannot be used as a magnetoresistive element in a shielded magnetoresistive head. There was a point.
【００１０】[0010]
【発明の目的】従って、本発明は前記のような従来技術
の問題点に鑑みて成されたもので、本発明の目的は、薄
膜磁気ヘッドの磁気抵抗素子を横方向の脱磁界の影響を
最小化させ得るように閉鎖回路に似る“Ｃ”字形に形成
し、後位の非磁性ギャップに縦方向のバイアス印加線を
設置して、ヘッドの設計時、バルクハイゼンノイズを抑
制するだけでなくヘッドの効率及び製造収率を向上させ
得るようにした磁気抵抗素子を提供することにある。SUMMARY OF THE INVENTION Therefore, the present invention has been made in view of the above-mentioned problems of the prior art, and an object of the present invention is to prevent a magnetoresistive element of a thin film magnetic head from being affected by a lateral demagnetizing field. In order to minimize it, it is formed into a “C” shape that resembles a closed circuit, and a vertical bias application line is installed in the rear non-magnetic gap to suppress not only Barkhausen noise when designing the head. An object of the present invention is to provide a magnetoresistive element capable of improving head efficiency and manufacturing yield.
【００１１】[0011]
【課題を解決するための手段】前記目的を達成するため
の本発明の特徴は、磁気抵抗型薄膜ヘッドにおける磁気
抵抗素子において、素子内での脱磁界が減らせるように
“Ｃ”字形に形成された磁気抵抗素子の後位の非磁性ギ
ャップにバイアス印加線（例えば、バイアスループない
しはバイアスコイル）を設置したことである。The feature of the present invention for achieving the above object is that a magnetoresistive element in a magnetoresistive thin film head is formed in a "C" shape so as to reduce the demagnetizing field within the element. That is, a bias applying line (for example, a bias loop or a bias coil) is installed in the non-magnetic gap behind the magnetoresistive element.
【００１２】[0012]
【実施例】以下、本発明による磁気抵抗素子を添付図面
に基づいて具体的に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A magnetoresistive element according to the present invention will be specifically described below with reference to the accompanying drawings.
【００１３】図１は本発明の実施例による磁気抵抗素子
の概略図で、情報記録装置で最近需要が急増している磁
気抵抗型薄膜磁気ヘッドに用いる磁気抵抗素子を形成す
ることにおいて、素子内での脱磁界を減らすために磁気
抵抗素子１の長さ対幅（Ｈ）の比が充分になるように閉
鎖回路に似る“Ｃ”字形に磁気抵抗素子１を形成し、前
記“Ｃ”字形の磁気抵抗素子１の後位の非磁性ギャップ
に横方向のバイアス印加線としてのバイアスコイル２を
設置してバイアス磁界を可変させることによりバイアス
電流による横方向の磁界が磁気抵抗素子１に印加される
ように構成したものである。FIG. 1 is a schematic view of a magnetoresistive element according to an embodiment of the present invention. In forming a magnetoresistive element for use in a magnetoresistive thin film magnetic head, which has recently been in rapid demand for information recording devices, The magnetoresistive element 1 is formed in a "C" shape resembling a closed circuit so that the ratio of the length to the width (H) of the magnetoresistive element 1 is sufficient to reduce the demagnetization field in the "C" shape. A magnetic field in the lateral direction due to a bias current is applied to the magnetoresistive element 1 by installing a bias coil 2 as a lateral bias applying line in the rear nonmagnetic gap of the magnetoresistive element 1 and varying the bias magnetic field. It is configured to.
【００１４】そして、磁気抵抗素子１内での横方向の脱
磁界を除去すると素子は単磁区（single domain ）状態
を維持し、その結果としてバルクハイゼンノイズが消滅
される。このように磁気抵抗素子の横方向の脱磁界を減
らすためには、 When the demagnetizing field in the lateral direction within the magnetoresistive element 1 is removed, the element maintains a single domain state, and as a result, the Barkhausen noise is extinguished. In order to reduce the demagnetizing field in the lateral direction of the magnetoresistive element,
【００１５】（ここで、Ｈｄ：反磁界、Ｍｓ：素子の飽
和磁化値、ｈ：素子の幅、１：素子の長さ）の式におい
て、磁気抵抗素子の長さ（ｌ）対幅（ｈ）の比を大きく
するか、 ２）磁気抵抗素子を閉鎖回路に似る“Ｃ”字形に設計し
て磁気的に連続するようにすることにより、素子の端部
でも充分に磁化されるようにするか、 ３）相互交換バイアス（exchange biasing）方式を採択
するか、 ４）バーバポール（barber pole ）導体を採択する方式
がある。In the equation (where, Hd: demagnetizing field, Ms: element saturation magnetization value, h: element width, 1: element length), the length (l) of the magnetoresistive element versus the width (h 2) or 2) Design the magnetoresistive element into a "C" shape similar to a closed circuit so that it is magnetically continuous so that it is sufficiently magnetized at the edges of the element. Or 3) adopting an exchange biasing method, or 4) adopting a barber pole conductor.
【００１６】[0016]
【発明の効果】以上説明したように、本発明による磁気
抵抗素子は、磁気抵抗素子の長さ対幅の比が充分になる
ように“Ｃ”字形に形成し、磁気的に閉鎖回路に似るよ
うに環状に形成される磁気抵抗素子の後位の非磁性ギャ
ップにバイアス（電流）印加線を形成することにより、
再生時に発生されるバルクハイゼンノイズの原因である
素子の中心感知部でのマルチ磁区の生成を抑制してヘッ
ドの効率を向上させ、磁気抵抗素子の後位ギャップ周囲
にだけ横方向のバイアス印加線を設置して製造工程を減
らすことによりヘッド設計時の生産性を向上させ得ると
いう優れた効果を奏する。As described above, the magnetoresistive element according to the present invention is formed in a "C" shape so that the length-to-width ratio of the magnetoresistive element is sufficient, and magnetically resembles a closed circuit. By forming a bias (current) application line in the non-magnetic gap at the rear of the magnetoresistive element formed in an annular shape,
Improves head efficiency by suppressing the generation of multi-domains in the center sensing part of the element, which is the cause of bulk Heisen noise generated during reproduction, and applies a lateral bias line only around the rear gap of the magnetoresistive element. Is installed to reduce the number of manufacturing steps, which has an excellent effect of improving the productivity in designing the head.
【図１】本発明の実施例による磁気抵抗素子の概略説明
図である。FIG. 1 is a schematic explanatory diagram of a magnetoresistive element according to an embodiment of the present invention.
【図２】従来技術による磁気抵抗素子で、（ａ）は素子
の両端部に反強磁性交換パターンが形成されたものの説
明図であり、（ｂ）は素子の両端部に縦方向のバイアス
コイルが交換パターンに隣接して形成されたものの説明
図である。2A and 2B are explanatory views of a magnetoresistive element according to a conventional technique in which an antiferromagnetic exchange pattern is formed at both ends of the element, and FIG. 2B is a longitudinal bias coil at both ends of the element. FIG. 7 is an explanatory view of what is formed adjacent to the exchange pattern.
１ 磁気抵抗素子 ２ バイアス印加線（バイアスコイル） 1 Magnetoresistive element 2 Bias application line (bias coil)
Claims (1)
おいて、素子内での脱磁界を減らすために“Ｃ”字形に
形成された磁気抵抗素子（１）の後位に位置する非磁性
ギャップに横方向のバイアス印加線（２）を設置したこ
とを特徴とする磁気抵抗素子。1. In a magnetoresistive element in a magnetoresistive thin film, a non-magnetic gap located at the rear of the magnetoresistive element (1) formed in a "C" shape in order to reduce a demagnetizing field within the element. A magnetoresistive element, characterized in that a bias application line (2) in the direction is installed.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR199414597 | 1994-06-24 | ||
| KR1019940014597A KR960002151A (en) | 1994-06-24 | 1994-06-24 | Magnetoresistive element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH087234A true JPH087234A (en) | 1996-01-12 |
Family
ID=19386214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6328971A Pending JPH087234A (en) | 1994-06-24 | 1994-12-28 | Magnetoresistance element |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH087234A (en) |
| KR (1) | KR960002151A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110869788A (en) * | 2017-06-02 | 2020-03-06 | 法国原子能及替代能源委员会 | System and method for suppressing low frequency noise of a magnetoresistive sensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0214418A (en) * | 1988-07-01 | 1990-01-18 | Hitachi Ltd | Magnetic head, manufacture thereof and magnetic recorder using it |
-
1994
- 1994-06-24 KR KR1019940014597A patent/KR960002151A/en not_active Application Discontinuation
- 1994-12-28 JP JP6328971A patent/JPH087234A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0214418A (en) * | 1988-07-01 | 1990-01-18 | Hitachi Ltd | Magnetic head, manufacture thereof and magnetic recorder using it |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110869788A (en) * | 2017-06-02 | 2020-03-06 | 法国原子能及替代能源委员会 | System and method for suppressing low frequency noise of a magnetoresistive sensor |
| CN110869788B (en) * | 2017-06-02 | 2022-08-23 | 法国原子能及替代能源委员会 | System and method for suppressing low frequency noise of a magnetoresistive sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| KR960002151A (en) | 1996-01-26 |
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