JPH06103537A - Magneto-resistance effect type head - Google Patents
Magneto-resistance effect type headInfo
- Publication number
- JPH06103537A JPH06103537A JP25120792A JP25120792A JPH06103537A JP H06103537 A JPH06103537 A JP H06103537A JP 25120792 A JP25120792 A JP 25120792A JP 25120792 A JP25120792 A JP 25120792A JP H06103537 A JPH06103537 A JP H06103537A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetoresistive
- magneto
- resistance effect
- soft magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は磁気抵抗効果型ヘッドに
係り、特に、磁気抵抗効果素子の抵抗値の変化により磁
気情報の再生等の処理を行なう磁気抵抗効果型ヘッドに
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive head, and more particularly to a magnetoresistive head for performing processing such as reproduction of magnetic information by changing the resistance value of a magnetoresistive element.
【０００２】[0002]
【従来の技術】近年、コンピュータ等の磁気記録装置の
磁気記録媒体であるハードディスクに情報の記録、再生
等の磁気情報処理を行なうための磁気ヘッドにおいて
は、静止状態では、磁気記録媒体に接触し、動作状態で
磁気記録媒体から浮上して所定の磁気記録または再生を
行なう浮上式の磁気ヘッドが多く用いられており、近
年、このような浮上式磁気ヘッドとして、磁気抵抗効果
素子（ＭＲ素子）を用いた磁気抵抗効果型ヘッド（ＭＲ
ヘッド）が多く用いられている。2. Description of the Related Art In recent years, a magnetic head for performing magnetic information processing such as recording and reproducing of information on a hard disk, which is a magnetic recording medium of a magnetic recording device such as a computer, contacts the magnetic recording medium in a stationary state. A floating magnetic head that floats from a magnetic recording medium in an operating state to perform predetermined magnetic recording or reproduction is widely used. In recent years, as such a floating magnetic head, a magnetoresistive effect element (MR element) has been used. Magnetoresistive head (MR
Head) is often used.
【０００３】図１３および図１４はこのような従来の磁
気抵抗効果型ヘッドを示したもので、磁気抵抗効果型ヘ
ッド１は、磁気記録媒体２の図示しないトラック幅とほ
ぼ同様の幅寸法を有する磁気抵抗効果素子３を有してお
り、この磁気抵抗効果素子３は、磁気記録媒体に対して
垂直に、かつ、磁気記録媒体２のトラック幅方向に位置
するように配設されている。また、この磁気抵抗効果素
子３は、磁気抵抗効果膜４を有しており、この磁気抵抗
効果膜４の一面側には、Ｎｂ、Ｔａ等の非磁性材料から
なる中間層５を介して軟磁性膜（ＳＡＬ膜）６が形成さ
れている。また、前記磁気抵抗効果素子３の前記中間層
５の形成側面の反対側面であってその両端部分には、そ
れぞれ反強磁性膜７が形成されており、この反強磁性膜
７部分には、前記磁気抵抗効果素子３の磁気抵抗効果膜
４に一定の電圧を印加して磁気抵抗効果膜４と軟磁性膜
６とにバイアス磁界をかけるとともに、磁気抵抗効果膜
４の抵抗値の変化を取り出すためのリード線８がそれぞ
れ接続されている。13 and 14 show such a conventional magnetoresistive head. The magnetoresistive head 1 has substantially the same width as the track width (not shown) of the magnetic recording medium 2. The magnetoresistive effect element 3 is provided, and the magnetoresistive effect element 3 is arranged perpendicularly to the magnetic recording medium and in the track width direction of the magnetic recording medium 2. Further, the magnetoresistive effect element 3 has a magnetoresistive effect film 4, and one surface of the magnetoresistive effect film 4 is softened via an intermediate layer 5 made of a nonmagnetic material such as Nb or Ta. A magnetic film (SAL film) 6 is formed. Further, an antiferromagnetic film 7 is formed on both sides of the side surface of the magnetoresistive effect element 3 opposite to the side surface on which the intermediate layer 5 is formed. A constant voltage is applied to the magnetoresistive effect film 4 of the magnetoresistive effect element 3 to apply a bias magnetic field to the magnetoresistive effect film 4 and the soft magnetic film 6, and the change in the resistance value of the magnetoresistive effect film 4 is extracted. Lead wires 8 are connected to each.
【０００４】さらに、前記磁気抵抗効果素子３の両側に
は、この磁気抵抗効果素子３により検出する磁界の空間
分解能を高めるために前記磁気抵抗効果素子３の幅寸法
に対して大きな幅寸法を有する一対のシールド９，９が
所定間隔を有するように配設されている。Further, both sides of the magnetoresistive effect element 3 have a width dimension larger than the width dimension of the magnetoresistive effect element 3 in order to enhance the spatial resolution of the magnetic field detected by the magnetoresistive effect element 3. The pair of shields 9, 9 are arranged so as to have a predetermined interval.
【０００５】このような従来の磁気抵抗効果型ヘッドに
おいては、この磁気抵抗効果型ヘッド１を、例えば、ハ
ードディスク等の磁気記録媒体２の磁気記録面に摺動さ
せながら、前記リード線８を介して磁気抵抗効果膜４に
所定の電圧を印加して、図１３中矢印で示すように、磁
気抵抗効果素子３の磁気抵抗効果膜４と軟磁性膜６とを
通るバイアス磁界をかけることにより、磁気記録媒体２
の各トラックから生じる磁界により前記磁気抵抗効果素
子３の抵抗値が変化し、この抵抗値の変化に応じて磁界
の強さを検出することにより、所定の磁気情報を再生す
るようになっている。In such a conventional magnetoresistive head, the magnetoresistive head 1 is slid on the magnetic recording surface of the magnetic recording medium 2 such as a hard disk and the like through the lead wire 8. By applying a predetermined voltage to the magnetoresistive effect film 4 and applying a bias magnetic field passing through the magnetoresistive effect film 4 and the soft magnetic film 6 of the magnetoresistive effect element 3 as shown by an arrow in FIG. Magnetic recording medium 2
The resistance value of the magnetoresistive effect element 3 is changed by the magnetic field generated from each track, and predetermined magnetic information is reproduced by detecting the strength of the magnetic field according to the change of the resistance value. .
【０００６】そして、前記磁気抵抗効果型ヘッド１にお
いては、磁気抵抗効果膜４に形成した反強磁性膜７によ
り、磁気抵抗効果膜４の両端部分において磁気記録媒体
２に対して平行方向の縦バイアスを発生させ、これによ
り、磁気抵抗効果膜４全体で単一ドメイン化を図ること
が可能となり、再生特性を向上させるとともに、バルク
ハウゼンノイズを軽減させることができるようになって
いる。In the magnetoresistive head 1, the antiferromagnetic film 7 formed on the magnetoresistive film 4 makes the longitudinal direction parallel to the magnetic recording medium 2 at both ends of the magnetoresistive film 4. By generating a bias, the magnetoresistive effect film 4 as a whole can be made into a single domain, the reproduction characteristics can be improved, and Barkhausen noise can be reduced.
【０００７】[0007]
【発明が解決しようとする課題】しかし、高密度化がさ
らに進み、トラック幅が減少し、再生出力が低下してく
ると、さらに、バルクハウゼンノイズを減らすことが必
要になる。前記従来の磁気抵抗効果型ヘッドでは、磁気
抵抗効果膜４の一面両端部分に形成した反強磁性膜７に
より磁気抵抗効果膜４の単一ドメイン化を図るようにし
ているが、前記磁気抵抗効果膜４に形成した反強磁性膜
７によっては、軟磁性膜６の単一ドメイン化を図ること
ができず、そのため、前記軟磁性膜６のドメイン構造や
動作時におけるドメイン変化等により、バイアス磁界が
影響を受け、バイアス磁界に乱れが生じることにより、
出力にバルクハウゼンノイズが入り、再生特性が低下す
るという問題を有している。However, as the density is further increased, the track width is reduced, and the reproduction output is reduced, it is necessary to further reduce Barkhausen noise. In the conventional magnetoresistive head, the anti-ferromagnetic films 7 formed on both end portions of one surface of the magnetoresistive film 4 are designed to make the magnetoresistive film 4 into a single domain. Due to the antiferromagnetic film 7 formed on the film 4, the soft magnetic film 6 cannot be made into a single domain. Therefore, due to the domain structure of the soft magnetic film 6 or the domain change during operation, the bias magnetic field is changed. Is affected and the bias magnetic field is disturbed,
There is a problem in that Barkhausen noise enters the output and the reproduction characteristics deteriorate.
【０００８】また、前記ヘッドの動作により磁気抵抗効
果膜４付近の温度が上昇してしまうため、この温度上昇
により前記反強磁性膜７がそのネール温度を越えると、
反強磁性膜７の反強磁性が消失してしまい、反強磁性膜
７による単一ドメイン化を図ることができず、バルクハ
ウゼンノイズの低減を図ることができないという問題を
も有している。さらに、磁気抵抗効果型ヘッド内で交換
バイアスを安定に長期間動作させるためには、耐食性に
富む材料の使用が必要であり、従来の反強磁性膜７に
は、Ｆｅ−Ｍｎ合金が使用されているため、耐食性がな
く信頼性に欠けているという問題を有している。Further, since the temperature in the vicinity of the magnetoresistive film 4 rises due to the operation of the head, if the antiferromagnetic film 7 exceeds its Neel temperature due to this temperature rise,
There is also a problem that the antiferromagnetism of the antiferromagnetic film 7 disappears, the antiferromagnetic film 7 cannot be made into a single domain, and Barkhausen noise cannot be reduced. . Further, in order to stably operate the exchange bias in the magnetoresistive head for a long period of time, it is necessary to use a material having a high corrosion resistance, and the conventional antiferromagnetic film 7 is made of a Fe—Mn alloy. Therefore, there is a problem that it has no corrosion resistance and lacks reliability.
【０００９】本発明は前記した点に鑑みてなされたもの
で、適正に反強磁性膜の反強磁性を保持することがで
き、磁気抵抗効果膜および軟磁性膜の単一ドメイン化を
図り、適正なバイアス磁界を形成することができ、磁気
特性の向上を図ることができ、さらに、耐食性の優れた
磁気抵抗効果型ヘッドを提供することを目的とするもの
である。The present invention has been made in view of the above points, and can appropriately maintain the antiferromagnetism of an antiferromagnetic film, and achieves a single domain of a magnetoresistive effect film and a soft magnetic film, An object of the present invention is to provide a magnetoresistive head capable of forming an appropriate bias magnetic field, improving magnetic characteristics, and having excellent corrosion resistance.
【００１０】[0010]
【課題を解決するための手段】前記目的を達成するため
本発明に係る磁気抵抗効果型ヘッドは、磁気抵抗効果膜
と軟磁性膜とを並設してなる磁気抵抗効果素子の両側に
一対のシールドを所定間隔を有するように配設し、前記
磁気抵抗効果膜にこの磁気抵抗効果膜に所定電圧を印加
して前記磁気抵抗効果膜と軟磁性膜との間にバイアス磁
界を発生させるリード線を接続してなる磁気抵抗効果型
ヘッドにおいて、前記磁気抵抗効果膜と軟磁性膜との間
に高いネール温度を有する反強磁性膜を介設したことを
特徴とするものである。また、好ましくは、前記反強磁
性膜を、Ｃｒ基合金、γ−Ｍｎ基合金あるいはＭｎ基金
属間化合物により形成したことをその特徴とするもので
ある。In order to achieve the above object, a magnetoresistive head according to the present invention comprises a pair of magnetoresistive elements having a magnetoresistive film and a soft magnetic film arranged side by side. A lead wire in which shields are arranged with a predetermined distance, and a predetermined voltage is applied to the magnetoresistive effect film to generate a bias magnetic field between the magnetoresistive effect film and the soft magnetic film. In the magnetoresistive head having the above-mentioned structure, an antiferromagnetic film having a high Neel temperature is interposed between the magnetoresistive film and the soft magnetic film. Further, it is preferable that the antiferromagnetic film is formed of a Cr-based alloy, a γ-Mn-based alloy or a Mn-based intermetallic compound.
【００１１】[0011]
【作用】本発明の磁気抵抗効果型ヘッドによれば、磁気
抵抗効果膜と軟磁性膜との間に高いネール温度を有する
反強磁性膜を形成するようにしているので、ヘッドの動
作により磁気抵抗効果膜付近の温度が上昇した場合で
も、前記反強磁性膜の反強磁性が消失してしまうことが
なく、常に適正な反強磁性を得ることができ、これによ
り、磁気抵抗効果膜のみならず、軟磁性膜に縦バイアス
が発生し、この縦バイアスにより磁気抵抗効果膜および
軟磁性膜の両方を単一ドメイン化することが可能とな
り、その結果、磁気抵抗効果膜と軟磁性膜との両方によ
りバルクハウゼンノイズを著しく減少させることがで
き、さらに、Ｃｒあるいは貴金属の添加により耐食性を
高めることができるものである。According to the magnetoresistive head of the present invention, since the antiferromagnetic film having a high Neel temperature is formed between the magnetoresistive film and the soft magnetic film, the magnetic field is increased by the operation of the head. Even if the temperature in the vicinity of the resistance effect film rises, the antiferromagnetism of the antiferromagnetic film does not disappear, and proper antiferromagnetism can always be obtained. Therefore, a longitudinal bias is generated in the soft magnetic film, and it becomes possible to make both the magnetoresistive effect film and the soft magnetic film into a single domain by the longitudinal bias. As a result, the magnetoresistive effect film and the soft magnetic film are separated from each other. Both of these can significantly reduce Barkhausen noise, and further increase the corrosion resistance by adding Cr or a noble metal.
【００１２】[0012]
【実施例】以下、本発明の実施例を図１乃至図１２を参
照し、図１３および図１４と同一部分には同一符号を付
して説明する。Embodiments of the present invention will be described below with reference to FIGS. 1 to 12, and the same parts as those in FIGS. 13 and 14 are designated by the same reference numerals.
【００１３】図１は本発明に係る磁気抵抗効果型ヘッド
の一実施例を示したもので、磁気抵抗効果型ヘッド１
は、図示しない磁気記録媒体に対して垂直に、かつ、磁
気記録媒体のトラック幅方向に位置するように配設され
る磁気抵抗効果素子３を有しており、この磁気抵抗効果
素子３は、磁気抵抗効果膜４およびこの磁気抵抗効果膜
４の一面側に配設された軟磁性膜６を有している。ま
た、本実施例においては、前記磁気抵抗効果膜４と軟磁
性膜６との間であって、前記磁気抵抗効果膜４の両端部
分には、それぞれ反強磁性膜７が介設されており、前記
磁気抵抗効果膜４と軟磁性膜６との間の前記各反強磁性
膜７の間部分には、非磁性材料からなる中間層５が形成
されている。FIG. 1 shows an embodiment of the magnetoresistive head according to the present invention.
Has a magnetoresistive effect element 3 arranged so as to be positioned perpendicular to a magnetic recording medium (not shown) and in the track width direction of the magnetic recording medium. It has a magnetoresistive film 4 and a soft magnetic film 6 arranged on one surface side of the magnetoresistive film 4. Further, in this embodiment, an antiferromagnetic film 7 is provided between the magnetoresistive effect film 4 and the soft magnetic film 6 and at both end portions of the magnetoresistive effect film 4. An intermediate layer 5 made of a non-magnetic material is formed between the magnetoresistive film 4 and the soft magnetic film 6 between the antiferromagnetic films 7.
【００１４】さらに、前記磁気抵抗効果膜４の他面側両
端部には、前記磁気抵抗効果素子３に一定の電圧を印加
するためのリード線８，８が接続されており、前記磁気
抵抗効果素子３の両側には、一対のシールド９，９が所
定間隔を有するように配設されている。Further, lead wires 8 for applying a constant voltage to the magnetoresistive effect element 3 are connected to both ends of the magnetoresistive effect film 4 on the other surface side, and the magnetoresistive effect is obtained. A pair of shields 9, 9 are arranged on both sides of the element 3 so as to have a predetermined interval.
【００１５】また、本実施例においては、前記反強磁性
膜７として、例えば、Ｃｒ基合金、γ−Ｍｎ基合金、Ｍ
ｎ基金属間化合物等のネール温度（ＴN ）が比較的高い
材料により形成されている。そして、前記磁気ヘッドの
動作時における温度上昇により、反強磁性膜７の反強磁
性が消失しないようにするためには、前記ネール温度
を、例えば、約５００゜Ｋ（２２７℃）以上確保するこ
とが必要である。Further, in this embodiment, the antiferromagnetic film 7 is made of, for example, a Cr-based alloy, a γ-Mn-based alloy, or M.
It is made of a material having a relatively high Neel temperature (T N ) such as an n-based intermetallic compound. In order to prevent the antiferromagnetism of the antiferromagnetic film 7 from disappearing due to the temperature rise during the operation of the magnetic head, the Neel temperature is secured at, for example, about 500 ° K (227 ° C) or more. It is necessary.
【００１６】このＣｒ基合金としては、まず、二元系合
金では、Ｃｒ1-X −ＡｌX 合金があり、これは、図２に
示すように、Ｃｒに対してＡｌを約７．５ａｔ％以上添
加することにより、ネール温度を５００゜Ｋ以上とする
ことができる。As the Cr-based alloy, first of all, as a binary alloy, there is a Cr 1 -X -Al X alloy, which has an Al content of about 7.5 at% with respect to Cr as shown in FIG. By adding the above, the Neel temperature can be set to 500 ° K or higher.
【００１７】また、三元系合金としては、Ｃｒ−Ａｌ−
Ｆｅ合金やＣｒ−Ｍｎ−Ｖ合金等があり、Ｃｒ−Ａｌ−
Ｆｅ合金の場合は、それぞれＣｒに対してＡｌを３０〜
３３ａｔ％、Ｆｅを５ａｔ％添加することにより、ネー
ル温度を５００゜Ｋ以上とすることができ、Ｃｒ−Ｍｎ
−Ｖ合金で、例えば、（Ｃｒ1-X −ＭｎX ）0.98−Ｖ
0.02の場合は、図３に示すように、Ｍｎが約５ａｔ％以
上であれば、５００゜Ｋ以上のネール温度を確保するこ
とができる。As a ternary alloy, Cr-Al-
There are Fe alloys and Cr-Mn-V alloys, and Cr-Al-
In the case of Fe alloy, Al is added to Cr in an amount of 30 to 30
By adding 33 at% and 5 at% of Fe, the Neel temperature can be increased to 500 ° K or higher, and Cr-Mn
In -V alloy, for example, (Cr 1-X -Mn X ) 0.98 -V
In the case of 0.02 , as shown in FIG. 3, if the Mn is about 5 at% or more, a Neel temperature of 500 ° K or more can be secured.
【００１８】さらに、その他の合金としては、ＣｒとＭ
ｎ、Ｒｅ、Ｒｈ、Ｒｕ、Ｏｓ、Ｉｒとの合金等がある。Further, as other alloys, Cr and M
There are alloys with n, Re, Rh, Ru, Os, Ir and the like.
【００１９】これらの合金については、図４乃至図９に
それぞれ示すように、Ｃｒ−Ｍｎ合金の場合は、Ｃｒに
対してＭｎを約２ａｔ％以上、Ｃｒ−Ｒｅ合金の場合
は、Ｒｅを約２〜１６ａｔ％、Ｃｒ−Ｒｈ合金の場合
は、Ｒｈを約１〜１０ａｔ％、Ｃｒ−Ｒｕ合金の場合
は、Ｒｕを約１〜１０ａｔ％、Ｃｒ−Ｏｓ合金の場合
は、Ｏｓを約１〜１０ａｔ％、Ｃｒ−Ｉｒ合金の場合
は、Ｉｒを約０．２５ａｔ％以上それぞれ添加すること
により、ネール温度を５００゜Ｋ以上に保持することが
できる。Regarding these alloys, as shown in FIGS. 4 to 9, in the case of Cr-Mn alloy, Mn is about 2 at% or more with respect to Cr, and in the case of Cr-Re alloy, Re is about 2 to 16 at%, in the case of a Cr—Rh alloy, Rh is approximately 1 to 10 at%, in the case of a Cr—Ru alloy, Ru is approximately 1 to 10 at%, and in the case of a Cr—Os alloy, Os is approximately 1 to In the case of 10 at% and Cr-Ir alloy, the Neel temperature can be maintained at 500 ° K or higher by adding Ir at about 0.25 at% or higher.
【００２０】また、γ−Ｍｎ基合金の場合は、γ−（Ｍ
ｎ−Ｐｄ−Ｎｉ）合金、Ｍｎ−Ｐｔ合金、Ｍｎ−Ｐｄ合
金あるいは、γ−（Ｍｎ−Ｉｒ−Ｃｕ）合金、γ−Ｍｎ
−Ｉｒ合金等が用いられる。In the case of a γ-Mn based alloy, γ- (M
n-Pd-Ni) alloy, Mn-Pt alloy, Mn-Pd alloy, or γ- (Mn-Ir-Cu) alloy, γ-Mn
-Ir alloy or the like is used.
【００２１】そして、前記γ−（Ｍｎ−Ｐｄ−Ｎｉ）合
金の場合は、図１０に示すように、Ｍｎに対してＮｉ、
Ｐｄを約５ａｔ％以下添加することにより、ネール温度
を５００゜Ｋ以上とすることができ、また、図示してい
ないが、Ｍｎ−Ｐｔ合金、Ｍｎ−Ｐｄ合金においては、
ＰｔまたはＰｄに対してＭｎをそれぞれ約５０ａｔ％添
加することにより、ネール温度が５００゜Ｋ以上とな
る。さらに、γ−（Ｍｎ−Ｉｒ−Ｃｕ）合金の場合は、
Ｍｎに対してＩｒ、Ｃｕを約５〜２５ａｔ％添加すれば
よい。また、γ−Ｍｎ−Ｉｒ合金の場合は、図１１に示
すように、Ｍｎに対してＩｒを約５〜２０ａｔ％添加す
ればよい。In the case of the γ- (Mn-Pd-Ni) alloy, as shown in FIG.
By adding Pd in an amount of about 5 at% or less, the Neel temperature can be set to 500 ° K or higher. Further, although not shown, in the Mn-Pt alloy and the Mn-Pd alloy,
By adding about 50 at% of Mn to Pt or Pd, respectively, the Neel temperature becomes 500 ° K or higher. Furthermore, in the case of a γ- (Mn-Ir-Cu) alloy,
Ir and Cu may be added to Mn in an amount of about 5 to 25 at%. Further, in the case of a γ-Mn-Ir alloy, as shown in FIG. 11, about 5 to 20 at% of Ir may be added to Mn.
【００２２】さらに、Ｍｎ基金属間化合物においては、
Ｍｎ3 Ｐｔ−Ｍｎ3 Ｒｈ；（Ｍｎ3Ｐｔ1-X ＲｈX ）お
よびＭｎＰｄ−ＭｎＰｔ；（ＭｎＰｄ1-X ＰｔX ）があ
り、このＭｎ3 Ｐｔ−Ｍｎ3 Ｒｈの場合は、Ｍｎに対し
てＰｔ、Ｒｈをｘ＝０．６〜１．０添加すればよく、ま
た、ＭｎＰｄ−ＭｎＰｔの場合は、Ｍｎに対してＰｄ、
Ｐｔをｘ＝０〜１．０添加すればよい。Further, in the Mn-based intermetallic compound,
Mn 3 Pt-Mn 3 Rh; (Mn 3 Pt 1-X Rh X) and MnPd-MnPt; there are (MnPd 1-X Pt X) , in the case of the Mn3 Pt-Mn 3 Rh, Pt relative to Mn , Rh may be added at x = 0.6 to 1.0, and in the case of MnPd-MnPt, Pd with respect to Mn,
It suffices to add Pt at x = 0 to 1.0.
【００２３】次に、本実施例の作用について説明する。Next, the operation of this embodiment will be described.
【００２４】本実施例においては、この磁気抵抗効果型
ヘッド１を、所定の磁気記録媒体の磁気記録面に摺動さ
せながら、前記磁気抵抗効果素子３の磁気抵抗効果膜４
と軟磁性膜６とを通るバイアス磁界をかけることによ
り、磁気記録媒体の各トラックから生じる磁界により前
記磁気抵抗効果素子３の抵抗値が変化し、この抵抗値の
変化に応じて磁界の強さを検出することにより、所定の
磁気情報を再生するようになっている。In this embodiment, the magnetoresistive head 1 is slid on the magnetic recording surface of a predetermined magnetic recording medium while the magnetoresistive film 4 of the magnetoresistive element 3 is being moved.
By applying a bias magnetic field passing through the soft magnetic film 6 and the soft magnetic film 6, the resistance value of the magnetoresistive effect element 3 is changed by the magnetic field generated from each track of the magnetic recording medium, and the strength of the magnetic field is changed according to the change of the resistance value. Is detected, predetermined magnetic information is reproduced.
【００２５】この場合に、本実施例においては、磁気抵
抗効果膜４と軟磁性膜６との間の両端部分に約５００゜
Ｋ以上のネール温度を有する反強磁性膜７を形成するよ
うにしているので、ヘッドの動作により磁気抵抗効果膜
４付近の温度が上昇しても、反強磁性膜７の反強磁性が
消失してしまうことがなく、この反強磁性膜７により常
に適正な反強磁性を得ることができ、これにより、磁気
抵抗効果膜４のみならず、軟磁性膜６の両方において、
縦バイアスが磁気抵抗効果膜４および軟磁性膜６を適正
に単一ドメイン状態にすることができるものである。In this case, in this embodiment, the antiferromagnetic film 7 having a Neel temperature of about 500 ° K or higher is formed at both ends between the magnetoresistive film 4 and the soft magnetic film 6. Therefore, even if the temperature in the vicinity of the magnetoresistive effect film 4 rises due to the operation of the head, the antiferromagnetic property of the antiferromagnetic film 7 does not disappear, and the antiferromagnetic film 7 ensures proper operation. Antiferromagnetism can be obtained, so that not only in the magnetoresistive effect film 4 but also in the soft magnetic film 6,
The longitudinal bias can properly bring the magnetoresistive film 4 and the soft magnetic film 6 into a single domain state.
【００２６】したがって、本実施例においては、磁気抵
抗効果膜４と軟磁性膜６との間に高いネール温度を有す
る反強磁性膜７を配設することにより、温度が上昇した
場合でも反強磁性を保持して磁気抵抗効果膜４および軟
磁性膜６の単一ドメイン化を図ることができるので、バ
ルクハウゼンノイズ等の発生を適性に防止することがで
きる。Therefore, in this embodiment, by disposing the antiferromagnetic film 7 having a high Neel temperature between the magnetoresistive film 4 and the soft magnetic film 6, even if the temperature rises, the antiferromagnetic film 7 has a strong antireflective property. Since the magnetism can be retained and the magnetoresistive effect film 4 and the soft magnetic film 6 can be made into a single domain, Barkhausen noise and the like can be appropriately prevented from occurring.
【００２７】また、図１２は本発明の他の実施例を示し
たもので、本実施例においては、磁気抵抗効果素子３の
磁気抵抗効果膜４と軟磁性膜６との間には、全面にわた
って高いネール温度を有する反強磁性膜７が介設されて
おり、非磁性材料からなる中間層は形成されていない。FIG. 12 shows another embodiment of the present invention. In this embodiment, the entire surface between the magnetoresistive effect film 4 and the soft magnetic film 6 of the magnetoresistive effect element 3 is shown. An antiferromagnetic film 7 having a high Neel temperature is provided over the entire surface, and no intermediate layer made of a nonmagnetic material is formed.
【００２８】その他の部分は、前記図１に示す実施例の
ものと同様であるため、同一部分には同一符号を付して
その説明を省略する。Since the other parts are the same as those of the embodiment shown in FIG. 1, the same parts are designated by the same reference numerals and the description thereof will be omitted.
【００２９】本実施例においても前記実施例と同様に、
磁気抵抗効果膜４と軟磁性膜６との間にネール温度の高
い反強磁性膜７を形成するようにしているので、常に適
正な反強磁性を得ることができ、磁気抵抗効果膜４のみ
ならず、軟磁性膜６の両方において縦バイアスが磁気抵
抗効果膜４および軟磁性膜６の単一ドメイン化を図るこ
とができるものである。Also in this embodiment, similar to the above embodiment,
Since the antiferromagnetic film 7 having a high Neel temperature is formed between the magnetoresistive film 4 and the soft magnetic film 6, proper antiferromagnetism can always be obtained, and only the magnetoresistive film 4 can be obtained. Of course, the longitudinal bias in both the soft magnetic film 6 can make the magnetoresistive film 4 and the soft magnetic film 6 have a single domain.
【００３０】したがって、本実施例においても、バルク
ハウゼンノイズ等の発生を適性に防止することができ
る。Therefore, also in this embodiment, it is possible to properly prevent the generation of Barkhausen noise or the like.
【００３１】なお、本発明は前述した各実施例に限定さ
れるものではなく、必要に応じて種々変更することが可
能である。The present invention is not limited to the above-mentioned embodiments, but various modifications can be made as necessary.
【００３２】[0032]
【発明の効果】以上述べたように本発明に係る磁気抵抗
効果型ヘッドは、磁気抵抗効果膜と軟磁性膜との間に高
いネール温度を有する反強磁性膜を配設することによ
り、常に反強磁性膜の適正な反強磁性を確保して磁気抵
抗効果膜および軟磁性膜の単一ドメイン化を図ることが
できるので、バルクハウゼンノイズ等の発生を適性に防
止することができ、さらに、Ｃｒあるいは貴金属の添加
により耐食性を著しく高めることができる等の効果を奏
する。As described above, the magnetoresistive head according to the present invention is always provided with the antiferromagnetic film having a high Neel temperature between the magnetoresistive film and the soft magnetic film. Since proper antiferromagnetism of the antiferromagnetic film can be secured and the magnetoresistive film and the soft magnetic film can be made into a single domain, Barkhausen noise and the like can be appropriately prevented from occurring. Addition of Cr, Cr or a noble metal has the effect of significantly increasing the corrosion resistance.
【図１】本発明に係る磁気抵抗効果型ヘッドの一実施例
を示す平面図FIG. 1 is a plan view showing an embodiment of a magnetoresistive head according to the present invention.
【図２】本発明による反強磁性膜を構成するＣｒ−Ａｌ
合金のＡｌの添加量に対するネール温度の関係を示す線
図FIG. 2 is Cr—Al forming an antiferromagnetic film according to the present invention.
A diagram showing the relationship between the Neel temperature and the addition amount of Al in the alloy
【図３】本発明による反強磁性膜を構成するＣｒ−Ｍｎ
−Ｖ合金のＭｎの添加量に対するネール温度の関係を示
す線図FIG. 3 Cr—Mn constituting the antiferromagnetic film according to the present invention
A diagram showing the relationship between the amount of Mn added to the -V alloy and the Neel temperature.
【図４】本発明による反強磁性膜を構成するＣｒ−Ｍｎ
合金のＭｎの添加量に対するネール温度の関係を示す線
図FIG. 4 is Cr—Mn forming the antiferromagnetic film according to the present invention.
Diagram showing the relationship between the amount of Mn added to the alloy and the Neel temperature
【図５】本発明による反強磁性膜を構成するＣｒ−Ｒｅ
合金のＲｅの添加量に対するネール温度の関係を示す線
図FIG. 5: Cr-Re forming the antiferromagnetic film according to the present invention
Diagram showing the relationship between the Neel temperature and the addition amount of Re in the alloy
【図６】本発明による反強磁性膜を構成するＣｒ−Ｒｈ
合金のＲｈの添加量に対するネール温度の関係を示す線
図FIG. 6 is Cr-Rh constituting the antiferromagnetic film according to the present invention.
A diagram showing the relationship between the Neel temperature and the added amount of Rh in the alloy
【図７】本発明による反強磁性膜を構成するＣｒ−Ｒｕ
合金のＲｕの添加量に対するネール温度の関係を示す線
図FIG. 7: Cr-Ru constituting the antiferromagnetic film according to the present invention
A diagram showing the relationship between the amount of Ru added to the alloy and the Neel temperature.
【図８】本発明による反強磁性膜を構成するＣｒ−Ｏｓ
合金のＯｓの添加量に対するネール温度の関係を示す線
図FIG. 8: Cr-Os constituting the antiferromagnetic film according to the present invention
A diagram showing the relationship between the Neel temperature and the added amount of Os in the alloy
【図９】本発明による反強磁性膜を構成するＣｒ−Ｉｒ
合金のＩｒの添加量に対するネール温度の関係を示す線
図FIG. 9: Cr-Ir constituting the antiferromagnetic film according to the present invention
A diagram showing the relationship between the Neel temperature and the added amount of Ir in the alloy
【図１０】本発明による反強磁性膜を構成するγ−（Ｍ
ｎ−Ｎｉ−Ｐｄ）合金のＮｉ、Ｐｄの添加量に対するネ
ール温度の関係を示す線図FIG. 10 shows γ- (M constituting the antiferromagnetic film according to the present invention.
n-Ni-Pd) A diagram showing the relationship between the Neel temperature and the added amount of Ni and Pd in the alloy.
【図１１】本発明による反強磁性膜を構成するＭｎ−Ｉ
ｒ合金のＩｒの添加量に対するネール温度の関係を示す
線図FIG. 11: Mn-I constituting the antiferromagnetic film according to the present invention
A diagram showing the relationship between the Neel temperature and the added amount of Ir in the r alloy.
【図１２】本発明に係る磁気抵抗効果型ヘッドの他の実
施例を示す平面図FIG. 12 is a plan view showing another embodiment of the magnetoresistive head according to the present invention.
【図１３】従来の磁気抵抗効果型ヘッドを示す側面図FIG. 13 is a side view showing a conventional magnetoresistive head.
【図１４】図１３の平面図14 is a plan view of FIG.
１ 磁気抵抗効果型ヘッド ３ 磁気抵抗効果素子 ４ 磁気抵抗効果膜 ５ 中間層 ６ 軟磁性膜 ７ 反強磁性膜 ８ リード線 ９ シールド 1 Magnetoresistive Head 3 Magnetoresistive Element 4 Magnetoresistive Film 5 Intermediate Layer 6 Soft Magnetic Film 7 Antiferromagnetic Film 8 Lead Wire 9 Shield
Claims (4)
なる磁気抵抗効果素子の両側に一対のシールドを所定間
隔を有するように配設し、前記磁気抵抗効果膜にこの磁
気抵抗効果膜に所定電圧を印加して前記磁気抵抗効果膜
と軟磁性膜との間にバイアス磁界を発生させるリード線
を接続してなる磁気抵抗効果型ヘッドにおいて、前記磁
気抵抗効果膜と軟磁性膜との間に高いネール温度を有す
る反強磁性膜を介設したことを特徴とする磁気抵抗効果
型ヘッド。1. A pair of shields are arranged on both sides of a magnetoresistive effect element having a magnetoresistive effect film and a soft magnetic film arranged side by side so as to have a predetermined interval, and the magnetoresistive effect film is provided with the magnetoresistive effect film. A magnetoresistive effect type head in which a lead wire for generating a bias magnetic field is connected between the magnetoresistive effect film and the soft magnetic film by applying a predetermined voltage to the effect film. A magnetoresistive head having an antiferromagnetic film having a high Neel temperature interposed between the magnetic head and the magnetoresistive head.
したことを特徴とする請求項１に記載の磁気抵抗効果型
ヘッド。2. The magnetoresistive head according to claim 1, wherein the antiferromagnetic film is formed of a Cr-based alloy.
形成したことを特徴とする請求項１に記載の磁気抵抗効
果型ヘッド。3. The magnetoresistive head according to claim 1, wherein the antiferromagnetic film is formed of a γ-Mn-based alloy.
より形成したことを特徴とする請求項１に記載の磁気抵
抗効果型ヘッド。4. The magnetoresistive head according to claim 1, wherein the antiferromagnetic film is formed of an Mn-based intermetallic compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25120792A JP2851212B2 (en) | 1992-09-21 | 1992-09-21 | Magnetoresistive head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25120792A JP2851212B2 (en) | 1992-09-21 | 1992-09-21 | Magnetoresistive head |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24620198A Division JP3155514B2 (en) | 1992-09-21 | 1998-08-31 | Magnetoresistive head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06103537A true JPH06103537A (en) | 1994-04-15 |
| JP2851212B2 JP2851212B2 (en) | 1999-01-27 |
Family
ID=17219294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25120792A Expired - Fee Related JP2851212B2 (en) | 1992-09-21 | 1992-09-21 | Magnetoresistive head |
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| Country | Link |
|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6295186B1 (en) | 1996-10-07 | 2001-09-25 | Alps Electric Co., Ltd. | Spin-valve magnetoresistive Sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias |
| USRE37819E1 (en) | 1995-09-19 | 2002-08-13 | Alps Electric Co., Ltd. | Manufacturing method for magnetoresistive head having an antiferromagnetic layer of PTMN |
| US7268981B2 (en) | 2004-04-30 | 2007-09-11 | Hitachi Global Storage Technologies Netherlands B.V. | Spin valve sensor having antiferromagnetic (AFM) pinning layer structures formed in the end regions |
-
1992
- 1992-09-21 JP JP25120792A patent/JP2851212B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE37819E1 (en) | 1995-09-19 | 2002-08-13 | Alps Electric Co., Ltd. | Manufacturing method for magnetoresistive head having an antiferromagnetic layer of PTMN |
| USRE37992E1 (en) | 1995-09-19 | 2003-02-18 | Alps Electric Co., Ltd. | Magnetoresistive head using exchange anisotropic magnetic field with an antiferromagnetic layer |
| US6295186B1 (en) | 1996-10-07 | 2001-09-25 | Alps Electric Co., Ltd. | Spin-valve magnetoresistive Sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias |
| US6496338B2 (en) | 1996-10-07 | 2002-12-17 | Alps Electric Co., Ltd. | Spin-valve magnetoresistive sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias |
| US7268981B2 (en) | 2004-04-30 | 2007-09-11 | Hitachi Global Storage Technologies Netherlands B.V. | Spin valve sensor having antiferromagnetic (AFM) pinning layer structures formed in the end regions |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2851212B2 (en) | 1999-01-27 |
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